Multi'fing MULTILING CORPORATION
`
`180 NORTH UNIVERSITY AVE.
`Suite 600
`PROVO, UT 84601 -4474
`
`VOICE (801) 377-2000
`FAX (801) 377-7085
`
`TRANSLATOR’S CERTIFICATE OF TRANSLATION
`
`Translation from Japanese to English
`MultiLing Project Number: GBPLC1710001HQ-S
`Client: Greenblum & Bernstein, P.L.C.
`
`MultiLing Corporation, a Delaware corporation, which has its principal office at 180 North
`University Avenue, Suite 600, Provo, UT 84601-4474, USA, certifies that
`
`(a) it is a professional translation company of multiple languages including Japanese and
`English;
`(b) it has translated from the original document to the translated document identified below,
`and t0 the best of its knowledge, information, and belief the translation of that document is
`accurate as a publication quality translation; and further,
`(0) these statements were made with the knowledge that willful false statements and the like
`so made are punishable by fine or imprisonment, or both, under Section 1001 of Title 18
`of the United States Code.
`
`Original Document Identifier: Awaya (1998) (03005811); JPH08250596A (03005939);
`JPH09293690A (03002312); JPH10125627A (03005938); JPH10256256A (03002313).
`Translated Document
`Identifier: Awaya (1998)
`(O3005811)_en-US; JPH08250596A
`(03 00593 9)_en—US; JPH09293 690A (03002312)_en-US; JPHI 0 1 25 627A (0300593 8)_en-
`US; JPH10256256A (03002313)_en-US.
`
`Signed this 10th day of February 2017.
`
`kg;
`
`Michael Degn, VP at es
`
`eting
`
`ACKNOWLEDGMENT BEFORE NOTARY
`
`State of Utah
`
`County of Utah
`
`}ss.
`
`On this 10th day of February, 2017 before me, the undersigned Notary Public, personally appeared Michael Degn, who
`proved on the basis of satisfactory evidence to be the person whose name is subscribed to this Translator’s Certificate
`of Translation and who acknowledged that he or she executed the same for the purposes stated therein.
`IN WITNESS WHEREOF, I hereunto set my hand and official seal.
`f
`
`‘I‘1.J._
`
`
`otary b ic, resiing at
`DIXIE CALKINS
`-. Notary Public. State of Utah
`
`Commission #671163
`My Commission Expires
`October 09, 2017
`
`
`
`
`
`
`e l, UT
`
`Page 1 of9
`
`IP Bridge Exhibit 2017
`
`TSMC v. IP Bridge
`|PR2016-01264
`
`Page 1 of 9
`
`IP Bridge Exhibit 2017
`TSMC v. IP Bridge
`IPR2016-01264
`
`

`

`(19) Japan Patent Office
`(JP)
`
`(11) Patent Application Disclosure No.
`Heisei 8-250596
`
`(12) JAPANESE
`UNEXAMINED PATENT
`APPLICATION
`PUBLICATION (A)
`(43) Publication Date:
`
`September 27, 1996 (Heisei 8)
`
`(51) Int. Cl.6
`H01L
`21/768
`
`21/28
`
`21/3205
`
`
`
`
`
`Ident. Code
`301
`
`
`
`
`
`Inter. Ref. No.
`
`
`
`
`
`
`FI
`H01L
`
`
`
`
`
`
`21/90
`21/28
`21/88
`21/90
`
`
`
`
`Location of Tech. Indication
`D
`301R
`R
`C
`
`
`Examination Request: Yes Total No. of Claims: 13 FD
`
`(Total 4 pages)
`
`
`
`(21) Application No.
`
`H8-70955
`
`(22) Date of Filing:
`
`March 4, 1996 (Heisei 8)
`
`1995-4447
`(31) Priority Number:
`March 4, 1995
`(32) Priority Date:
`(33) Country of the Priority Korea (KR)
`
`
`
`(71) Applicant: 595167650
`Hyundae Electronics Industries Co. Ltd.
`136-1 Sun, Amiri, Pubaluwu, Ichon
`District, Gyeonggi Province, Republic
`of Korea
`(72) Inventor: Cho Gyeon Sue
`102-1203 Shinhari Copor Apartment,
`Ichon District, Gyeonggi Province,
`Republic of Korea
`Attorney Sato Hideaki
`
`
`
`(74) Agent:
`
`
`
`(54) [Title of Invention] METAL WIRING FORMATION
`METHOD OF SEMICONDUCTOR DEVICE
`
`(57) Abstract
`[Problem] To improve step coverage of a diffusion prevention
`film, reduce particles, and raise yield and reliability.
`[Resolution Means] After a contact hole is formed in a
`predetermined site on a semiconductor substrate whereon an
`insulating film is formed, a titanium and titanium nitride film
`are formed at a predetermined thickness on the entire surface of
`the insulating film including the contact hole by using a
`chemical vapor deposition method.
`Thereafter, the formed titanium nitride film is heat treated at a
`predetermined temperature and for a predetermined time in a
`nitrogen atmosphere to phase transition to a three-layer titanium
`nitride film having a different phase and nitrogen content.
`Thereafter, the metal wiring for electrically connecting the contact
`hole portion is formed.
`
`
`
`
`
`Page 2 of 9
`
`

`

`(2)
`
`Specification
`Title of the Invention: METAL WIRING FORMATION METHOD OF
`SEMICONDUCTOR DEVICE
`
`[DETAILED DESCRIPTION OF THE INVENTION]
`[0001]
`
`[Technical Field of the Invention] The present invention relates to a formation
`method of a semiconductor device, and particularly relates to a formation method of a
`metal wiring including a metal layer for preventing diffusion.
`[0002]
`
`[Prior Art] In recent years, research relating to a wiring design that is easily and
`freely carried out by increasing the degree of integration of a semiconductor device, and a
`metal wiring technique where the wiring resistance, current capacity, and the like is made
`discretionary, has been active.
`
`In general, aluminum having a low resistance is widely used as a material for
`metal wiring of a semiconductor device.
`
`Since the width of such an aluminum wiring is miniaturized as the degree of
`integration of the device increases, the current density increases.
`
`The increase of the current density causes wiring failure due to electron
`movement, irregular reflection, and movement of stress; this causes a problem in that the
`reliability of the semiconductor device is lowered.
`[0003]
`
`In order to solve the aforementioned problems, conventionally, disconnection of
`the metal wiring can be prevented by laminating a copper (Cu) or titanium (Ti) film or
`the like on an aluminum wiring film and reducing the movement of electrons and
`movement of stress, but a phenomenon such as hillock and whisker occurs, generating
`problems such as mutual short circuit of a wiring and breakdown of an insulating film.
`[0004]
`
`FIG. 2 is a cross-sectional view illustrating a state in which a metal wiring is
`formed after a diffusion prevention film is formed to solve problems such as hillock and
`whiskers in the metal wiring formation step of a semiconductor element according to a
`conventional example.
`
`This method, as illustrated in FIG. 2, first forms a contact hole in a predetermined site
`of an insulating film 2 after forming the insulating film 2 on a semiconductor substrate 1.
`
`In the step for forming the contact hole, the contact hole is etched at a depth where
`the surface of the lower portion of the semiconductor 1 is exposed.
`
`Then, a titanium film 3 and a titanium nitride film 4 is sequentially laminated as a
`diffusion prevention film on the entire surface of the deposit, including a contact hole in a
`predetermined site in the insulating film 2, using a physical vapor deposition (PVD) method.
`
`Thereafter, a metal layer 8 is formed on the upper portion of the titanium nitride
`film 4.
`[0005]
`
`[Problem to be Solved by the Invention] However, as the current high degree of
`integration is advanced, the size of the contact hole decreases, and in comparison, the
`difference in level of the contact hole relatively increases.
`
`Therefore, when the metal wiring is formed by laminating the diffusion prevention
`
`Page 3 of 9
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`

`

`(3)
`
`film as described above using the physical vapor deposition method, step coverage is
`decreased and the diffusion prevention film cannot be uniformly vapor deposited on the
`lower portion of the contact hole, and furthermore, when the thickness of the metal layer
`is increased, a shadow effect is increased in the top corner of the top portion of the
`contact hole, making it impossible to carry out subsequent steps.
`[0006]
`
`In addition, when TiCl4 is reacted with NH3 or the like by using a chemical vapor
`deposition method to improve the step coverage of the diffusion prevention film, a
`particle is generated inside the titanium film and the titanium nitride film, resulting in a
`problem where the yield of the elements is reduced and the reliability of the device is
`reduced.
`
`In addition, since the phase of the titanium nitride film is amorphous during vapor
`deposition of the titanium nitride film, there are problems in that the internal resistance of
`the titanium nitride film increases thereby lowering the conduction speed of the device.
`
`Therefore, an object of the present invention is to provide a metal wiring
`formation method of a semiconductor device, wherein the step coverage of the diffusion
`prevention film can be improved, and the yield and reliability of the semiconductor
`device can be improved by reducing the resistance inside of the diffusion prevention film
`and the particles of the diffusion prevention film.
`[0007]
`
`[Means for Solving the Problems] In order to achieve the object of the present
`invention as described above, the method of the present invention first forms a contact
`hole in a predetermined site on the semiconductor substrate whereon an insulating film is
`formed, then sequentially forms a titanium film and a titanium nitride film at a
`predetermined thickness on the entire surface of the insulating film including the contact
`hole using a chemical vapor deposition method, thereafter, heat treats the formed titanium
`nitride film in a nitrogen atmosphere, and phase transitions to a titanium nitride film
`having a three-layer structure in which the nitrogen content and the phase differ from
`each other.
`
`Thereafter, the metal wiring for electrically connecting the contact hole portion is
`formed.
`
`The present invention can also include a step for vapor depositing an arc thin film
`after the metal wiring is formed.
`[0008]
`
`[Embodiment of the Invention] Preferred embodiments of the present invention
`will be described below with reference to appended drawings.
`
`FIG. 1 (a) through (d) are cross-sectional diagrams illustrating the steps for
`forming the metal wiring according to the embodiment of the present invention.
`
`First, as illustrated in FIG. 1 (a), a contact hole is formed in a predetermined
`portion of the insulating film 2 using a photo-lithography method, by vapor depositing
`the insulating film 2 on the upper portion of the semiconductor substrate 1 including an
`active region.
`
`The contact hole is formed by etching a predetermined portion of the insulating
`film 2 until the surface of the semiconductor substrate 1 is exposed.
`[0009]
`
`Thereafter, as illustrated in FIG. 1 (b), the titanium film is vapor deposited in the
`
`Page 4 of 9
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`

`

`(4)
`
`inner portion of the contact hole and on the entire surface of the insulating film 2.
`
`The titanium film 3 is formed by using a chemical vapor deposition (CVP) method
`via a reaction between TiCl4 and NH3 or NF3, and that is formed sufficiently thin to
`maintain the shape of the contact hole.
`
`The chemical vapor deposition method is a vapor deposition method for
`improving the step coverage of the inner portion of the contact hole.
`
`Thereafter, the titanium nitride film 4 is formed on the upper portion of the
`titanium film 3.
`
`Here, in order to suppress generation of particles, the titanium nitride film 4 is
`formed by using a chemical vapor deposition method using only
`tetradimethylaminotitanium (Ti(N(CH3)2)4) or tetracetyl aminotitanium (Ti(N(C2H5)4) as
`a raw material, and a feed gas for forming the titanium nitride film 4 is nitrogen and/or
`helium.
`
`In addition, when vapor depositing the titanium nitride film, the temperature is
`300 to 500°C, the pressure is adjusted in a range of 5 to 10 mTorr, and the film quality
`formed at this time is in an amorphous phase.
`[0010]
`
`Then, the semiconductor substrate whereon the layer in the aforementioned state
`was formed, is heat treated in a nitrogen atmosphere at a temperature range of 400 to
`600°C for 30 to 60 minutes.
`
`The titanium nitride film 4 is divided into three titanium nitride films having
`different physical properties via this heat treatment.
`
`That is, as illustrated in FIG. 1 (c), it is divided into an amorphous first titanium
`nitride film 5 from a lower layer, a crystalline second titanium nitride film 6 in an
`intermediate layer, and a nitrogen rich crystalline third titanium nitride film 7.
`
`Furthermore, when using a rapid thermal process (RTP) method instead of the
`heat treatment, the heat treatment is carried out in a temperature range of 700 to 900°C
`for 10 to 30 seconds.
`[0011]
`
`Since the single titanium nitride film 4 illustrated in FIG. 1 (b) is amorphous, the
`resistance is extremely high, but the internal resistance of the titanium nitride film can be
`decreased by phase transitioning the single titanium nitride film 4 to the three-layered
`titanium nitride film each having different physical properties by the heat treatment under
`the above conditions.
`
`Subsequently, as illustrated in FIG. 1 (c), copper, aluminum, or an alloy thereof is
`vapor deposited on the entire surface of the diffusion prevention film (titanium nitride
`film) using a common physical vapor deposition method, forming the metal layer 8.
`
`Thereafter, an arc thin film (arc-metal layer) 9 is vapor deposited on the metal
`layer 8.
`
`The arc thin film 9 is vapor deposited using a chemical vapor deposition method.
`
`The arc thin film 9 serves to block reflected light from the metal wiring pattern
`when a photo-resist film for forming a metal wiring pattern is exposed.
`
`Tetradimethylaminotitanium or tetradiethylaminotitanium are examples of the raw
`material of the arc thin film 9, and the vapor deposition temperature is 300 to 450°C.
`
`The formation step of the arc thin film 9 can also be omitted in some cases.
`[0012]
`
`Page 5 of 9
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`

`

`(5)
`
`Thereafter, as illustrated in FIG. 1 (d), the metal wiring pattern is formed by
`
`patterning the metal layer (3, 5, 6, 7, 8, 9).
`
`Although the metal layer 8 described the aforementioned embodiment is formed
`by an alloy of copper and aluminum, it can be replaced by a metal having a high
`conductivity such as tungsten.
`
`As described in detail in the above preferred embodiments, the present invention
`uses thermolysis of a raw material including titanium and nitrogen to form the titanium
`nitride film forming on the titanium film during the metal wiring step, improves the step
`coverage by phase transitioning the single layer titanium nitride film to the three-layered
`structure with different characteristics by heat treating in a nitrogen atmosphere, reduces
`the electrical resistance of the titanium nitride film, and can reduce the generation of
`particles.
`[0013]
`
`[Effect of the Invention] As a result, the yield and reliability of the device is
`improved, and the signal transmission speed is improved.
`
`Specific embodiments of the present invention were described with reference to
`drawings, but can be modified and varied by those skilled in the art.
`
`Therefore, it is understood that the scope of claims includes all the modification
`and variations as far as they fall within the scope of the present invention.
`
`[BRIEF DESCRIPTION OF THE DRAWINGS]
`
`FIG. 1 (a) through (d) are cross-sectional diagrams illustrating the steps for
`forming the metal wiring according to the embodiment of the present invention.
`
`FIG. 2 is a cross-sectional diagram of the semiconductor device for describing the
`method for forming a conventional metal wiring.
`
`[DESCRIPTION OF REFERENCE NUMERALS]
`1
`Semiconductor Device
`2
`Insulating Film
`3
`Titanium Film
`4
`Titanium Nitride Film
`5
`First Titanium Nitride Film
`6
`Second Titanium Nitride Film
`7
`Third Titanium Nitride Film
`8
`Metal Layer
`9
`Arc Thin Film
`
`Page 6 of 9
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`

`

`(6)
`
`What is Claimed is:
`
`A metal wiring formation method of a semiconductor device, comprising: a step
`1.
`for forming an insulating film on a semiconductor substrate including an active region; a
`step for forming a contact hole in a predetermined site on the semiconductor substrate
`whereon the insulating film is formed; a step for sequentially forming a titanium film and
`a titanium nitride film at a predetermined thickness on the insulating film including the
`contact hole; a step for heat treating the titanium nitride film in a nitrogen atmosphere,
`causing a phase transition to a titanium nitride film having a three-layer structure wherein
`a nitrogen content and phase differ from each other; and a step for forming a metal wiring
`that electrically connects the contact hole portion.
`
`The metal wiring formation method of the semiconductor device according to
`2.
`claim 1, wherein the titanium film is formed using a chemical vapor deposition method
`via a reaction between TiCl4 and NH3.
`
`The metal wiring formation method of the semiconductor device according to
`3.
`claim 1, wherein the titanium nitride film is formed by thermolysis of tetra-
`dimethylaminotitanium.
`
`The metal wiring formation method of the semiconductor device according to
`4.
`claim 1, wherein the titanium nitride film is formed by thermolysis of tetra-
`diethylaminotitanium.
`
`The metal wiring formation method of the semiconductor device according to
`5.
`claim 3 or 4, wherein the titanium nitride film is formed under conditions of a
`temperature of 300 to 500°C and a pressure of 5 to 10 mTorr.
`
`The metal wiring formation method of the semiconductor device according to
`6.
`claim 1, wherein the heat treatment for the phase transition of the titanium nitride film is
`carried out in a nitrogen atmosphere for 30 to 60 minutes at a temperature range of 400 to
`600°C.
`
`The metal wiring formation method of the semiconductor device according to
`7.
`claim 1, wherein the heat treatment for the phase transition of the titanium nitride film is
`carried out in a nitrogen atmosphere for 10 to 30 seconds at a temperature range of 700 to
`900°C.
`
`The metal wiring formation method of the semiconductor device according to
`8.
`claim 1, wherein the metal wiring is formed by aluminum or copper.
`
`The metal wiring formation method of the semiconductor device according to
`9.
`claim 8, comprising a step for forming an arc thin film for preventing reflection due to
`the aluminum film or copper film, prior to a pattern forming step of the aluminum film or
`copper film for forming the metal wiring.
`
`
`Page 7 of 9
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`

`

`(7)
`
`The metal wiring formation method of the semiconductor device according to
`10.
`claim 9, wherein the arc thin film is a titanium film.
`
`The metal wiring formation method of the semiconductor device according to
`11.
`claim 10, wherein the titanium film is formed by thermolysis of tetra-dimethyl
`aminotitanium.
`
`The metal wiring formation method of the semiconductor device according to
`12.
`claim 10, wherein the titanium film is formed by thermolysis of tetra-
`diethylaminotitanium.
`
`The metal wiring formation method of the semiconductor device according to
`13.
`claim 11 or 12, wherein the temperature range of the thermolysis is 300 to 450°C.
`
`Page 8 of 9
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`

`

`(8)
`
`(8)(8)
`
`
`
`
`
`FIG. 1FIG. 1
`
`
`
`FIG. 2FIG. 2
`
`
`
`(a)(a)
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