`571-272-7822
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` Paper 46
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`Date: December 12, 2017
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
`LIMITED and GLOBALFOUNDRIES U.S. INC.,
`Petitioners,
`
`v.
`
`GODO KAISHA IP BRIDGE 1,
`Patent Owner.
`
`
`Case IPR2016-01249
`Patent 6,538,324 B1
`
`
`
`
`Before JUSTIN T. ARBES, MICHAEL J. FITZPATRICK, and
`JENNIFER MEYER CHAGNON, Administrative Patent Judges.
`
`
`
`FITZPATRICK, Administrative Patent Judge.
`
`
`ORDER
`Conduct of the Proceeding
`37 C.F.R. § 42.5
`
`
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`
`
`IPR2016-01249
`Patent 6,538,324 B1
`
`Patent Owner, Godo Kaisha IP Bridge 1, filed a contingent Motion to
`Amend, seeking to substitute proposed claims 11–13 for issued claims 5, 9,
`and 7, respectively. Paper 16 (“Amend Mot.”), 1–2. Subject to the
`condition below, we intend to grant the Motion to Amend with respect to
`claim 13 in a forthcoming final written decision.
`The condition is that proposed claim 13 be re-presented in
`independent form and with all three instances of “being composed of”
`replaced with “consisting essentially of,” given Patent Owner’s
`representation that the former in fact means the latter. See, e.g., Amend
`Mot. 7.
`Claim 13, as so rewritten, is as follows:
`13. A multi-layered wiring structure comprising a
`barrier film which prevents diffusion of copper from a copper
`wiring layer formed on a semiconductor substrate,
`said barrier film having a multi-layered structure of first
`and second films,
`said first film consisting essentially of crystalline metal
`containing nitrogen
`therein,
`the nitrogen being present
`throughout the first film,
`said second film consisting essentially of amorphous metal
`nitride,
`said barrier film being constituted of common metal
`atomic species,
`said first film being formed on said second film,
`said first film in direct contact with said second film,
`said first film containing nitrogen in a smaller content than
`that of said second film,
`wherein said first film has a thickness in the range of 60
`angstroms to 300 angstroms both inclusive;
`2
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`IPR2016-01249
`Patent 6,538,324 B1
`
`
`wherein said first film consisting essentially of crystalline
`metal containing nitrogen therein is a solid solution; and
`a copper film is formed on and in direct contact with said
`first film.
`
`Accordingly, it is
`ORDERED that Patent Owner may file a short paper supplementing
`its Motion to Amend to re-present proposed claim 13 in the form set forth
`above, without argument; and
`FURTHER ORDERED that such paper shall be filed no later than
`December 15, 2017.
`
`
`
`3
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`
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`IPR2016-01249
`Patent 6,538,324 B1
`
`For Petitioners:
`
`E. Robert Yoches
`Stephen Kabakoff
`Joshua Goldberg
`FINNEGAN, HENDERSON, FARABOW,
`GARRETT, & DUNNER
`bobyoches@finnegan.com
`stephen.kabakoff@finnegan.com
`joshua.goldberg@finnegan.com
`TSMC-IPB-PTAB@finnegan.com
`
`David Tennant
`Shamita Etienne-Cummings
`Allen Wang
`WHITE & CASE, LLP
`dtennant@whitecase.com
`setienne@whitecase.com
`allen.wang@whitecase.com
`wcptab@whitecase.com
`WCGlobalFoundriesIPR1Team@whitecase.com
`
`
`For Patent Owner:
`
`Michael Fink
`Neil Greenblum
`Arnold Turk
`GREENBLUM & BERNSTEIN
`mfink@gbpatent.com
`ngreenblum@gbpatent.com
`aturk@gbpatent.com
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`4
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