`
`I,
`
`Yukiko Toyoda Buntin
`
`of
`
`1950 Roland Clarke Place
`
`Reston, VA 20191
`
`declare that I am well acquainted with both the Japanese and English languages, and that the
`
`attached is an accurate partial translation,
`
`to the best of my knowledge and ability, of
`
`Japanese Patent Application Publication No. H9-120964 (translation of first page only),
`
`published May 6, 1997.
`
`I further declare that all statements made herein of my own knowledge are true and that all
`
`statements made on information and belief are believed to be true; and further that these
`
`statements were made with the knowledge that willful false statements and the like so made
`
`are punishable by fine or imprisonment, or both, under Section 1001 of Title 18 of the United
`
`States Code and that such willful false statements may jeopardize the validity of the above-
`
`captioned application or any patent issued thereon.
`
` S ignature
`
`Yukiko Toyo Buntin
`
`{J709902 031 542201300}
`
`Page 1 of 3
`
`Exhibit 2067
`
`TSMC V. IP Bridge
`1PR2016—01246
`
`Page 1 of 3
`
`Exhibit 2067
`TSMC v. IP Bridge
`IPR2016-01246
`
`
`
`(19) Japan Patent Office (JP)
`
`(12) Patent Publication (A)
`(11) Patent Application Publication No:
`H9-120964
`
`(43) Publication Date: May 6, 1997
`
`
`(51) Int.Cl.6
`H 01L 21/3205
`
`21/3065
`
`21/768
`
`Classification Symbol
`
`JP0 Ref. FI
`H01L 21/88
`
`21/302
`
`21/88
`21/90
`
`Technical display area
`
`J
`
`J
`
`P
`A
`
`Examination Request — None — Number of Claims 16 CL (19 pages total)
` —-——
`
`
`(21) Application No: H7—278546
`(22) Filing Date:
`October 26, 1995
`
`(71) Applicant:
`
`000005821
`Matsushita Electric Industrial Co., Ltd.
`1006, Oaza Kadoma, Kadoma—shi, Osaka
`
`(72) Inventor:
`
`Tetsuya UEDA
`c/o Matsushita Electric Industrial Co., Ltd.
`1006, Oaza Kadoma, Kadoma—shi, Osaka
`
`(72) Inventor:
`
`Satoshi UEDA
`c/o Matsushita Electric Industrial Co., Ltd.
`1006, Oaza Kadoma, Kadoma—shi, Osaka
`
`(74) Agent:
`
`Patent Attorney: Hiroshi MAEDA (and 2 others)
`
`(54)
`
`Title of Invention
`
`FORMATION METHOD FOR WIRING AND SEMICONDUCTOR ELEMENT
`
`{J709902 03154264.DOC}
`
`- 1 -
`
`Page 2 of 3
`
`Page 2 of 3
`
`
`
`(W){§%}
`
`{fig} 7thUV¢§74—®fi@mfiéflztb
`
`v%méfi¢éwmflfigwfimfi&éfifi¢éo
`
`{flR$&l 903y£mlinfilgfifififilo
`
`Efifib\§6K%®LK%1$EEW6&6$1EE
`
`fifimfilséfimtéofilgfififimfi13wfifi
`
`#%®fitu\mfifiTib%mémewaEfivé
`
`filfifi$Rgflt\WEETlDbfi§Hfifiwflé
`
`fi¢&%2fifi%R@2tfififiéhfméo§mwé
`
`fiifi\1/2Ti0$§mfi2gfifififi20%fifi
`
`¢6t\filfifi%Rwlu%2EEfififi20mlo
`
`(Emil: in $5; 2 Fafilififii Rgpz 0L1? odiifiéfifi Rcsrfii'
`
`fifiéfléo%®&\¥fikéfi5:tfi<%2fififi
`
`me§fifit\fifilv?Nv7Lffi%K%2EE
`
`fifimfi21%fivo:w%mfi13,21®fimuu
`V7574—0flfiflfilUBWfitQéo
`
`Rgp]
`
`9‘ Wg1<T<Wg2
`
`W
`‘32 WEEWE
`l
`I
`m%wfi
`Rgpz
`{fiflfil}
`i
`F:
`
`
`
`1 (wnfifi)
`
`Rgp‘l
`ZOKEZE‘JE
`Rng RC5
`-=¢p¢mgm%mijfl§fifimm
`
`
`(b) 3';-
`_.
`
`__ .
`
`
`
`
`(c)
`
`
` I'.'.-_".Z :
`
`
`
`
`
`
`
`47ZL/AL7ZLf/U7VC‘I
`
`
`
`'-
`
`wfi”
`
`{1709902 03154264.DOC}
`
`- 2 -
`
`Page 3 of 3
`
`Page 3 of 3
`
`