87CH2515-5
`
`international
`ELECTRON
`DEVICES
`meeting
`l987
`
`WASHINGTON, D.C.
`DECEMBER 6-9, 1987
`
`Sponsored by Electron Devices Society of IEEE
`
`Page 1 of 27
`
`IP Bridge Exhibit 2038
`TSMC v. IP Bridge
`IPR2016-01246
`
`

`

`1987 International Electron Devices Meeting
`TECHNICAL DIGEST
`
`Papers have been printed without editing as received from the authors.
`
`All opinions expressed in the Digest are those of the authors and are not binding
`on The Institute of Electrical and Electronics Engineers, Inc.
`
`Publication of a paper in this Digest is in no way intended to preclude publication
`of a fuller account of the paper elsewhere.
`
`Copies of available volumes of this Digest may be obtained from The Institute
`Inc., 445 Hoes Lane, Piscataway, N.J.
`of Electrical and Electronics Engineers,
`Library of Congress Catalog Card Number: 78-20188.
`
`IEEE Catalog Number: 87 CH 2515-5
`
`is permitted with credit to the source.
`Copyright and Reprint Permissions: Abstracting
`Libraries are permitted to photocopy beyond the limits of US. copyright law for private use
`of the first page,
`of patrons those articles
`in this volume that carry a code at the bottom
`provided the per-copy fee indicated
`in the code is paid through the Copyright Clearance
`Center, 29 Congress St., Salem, MA 01970. Instructors are permitted to photocopy isolated
`articles for noncommerical classroom use without fee. For other copying, reprint or
`republication permission, write to Director, Publishing Services, IEEE, 345 E. 47th St., New
`Institute of Electrical and
`All rights reserved. Copyright 0 1987 by The
`York, NY 10017,
`Electronics Engineers, Inc.
`
`Page 2 of 27
`
`

`

`
`
`OVERVIEW
`
`FROM THE GENERAL CHAIRMAN
`
`-
`I
`
`I
`Rick Dames
`General Chairman
`
`The conference committee and I welcome you to the 1987 IEEE International Electron
`Devices Meeting. This year the conference returns to Washington, D.C. and continues a 32-
`year tradition as a forum for the presentation of the latest research and development in the area
`of electron devices and their applications. The technical agenda will focus on advances in the
`areas of solid—state devices, device technology, integrated circuits, quantum electronics and
`compound semiconductor devices, modeling and simulation, detectors, sensors and displays,
`and electron tubes.
`The strong international nature of the IEDM is reflected in this year’s exciting program
`which contains papers selected from 529 abstracts that were submitted from 22 countries around
`the world. The 1987 IEDM will open with a plenary session highlighted by three excellent
`presentations describing the prospects for applying high-temperature super conductivity to
`electronics, epitaxial gallium arsenide—on—silicon technology, and analog ICs in the VLSI digital
`era. Additionally, the agenda will be enriched by four stimulating panel discussions: “Appli-
`cation Dependency of Technology Choice-—CMOS, Bipolar, BiCMOS”, “Advanced IC Inter-
`connect Technology”, “Gallium Arsenide on Silicon“, and “Integrating Sensors and Electron-
`ics: Where to Draw the Line?”.
`On Sunday, the 1987 IEDM will offer two short courses specially designed to enhance one’s
`3%
`technical vitality. The first course is “BiCMOS Technology and Design Techniques”, and the
`BFUCC Griffing
`second is “Gallium Arsenide Monolithic Microwave ICs.” These courses are planned to broadly
`T€ChniCa1 Pmgram
`appeal to IEDM participants including both those unfamiliar with the topic areas and those
`Chairman
`who have worked in these fields.
`The Tuesday luncheon will feature Professor John Hopfield of the California Institute of Technology. His talk will
`explain some basic concepts in neural networks and their potential analogues in electronics.
`It will be our pleasure to join the IEEE in presenting the Cledo Brunetti Award to Dr. Michael Hatzakis of IBM,
`the Jack A. Morton Award to Dr. Dennis D. Buss of Analog Devices, Inc. and Drs. Richard A. Chapman and Michael
`A. Kinch of Texas Instruments, and the David Sarnoff Award to Drs. Frank F. Fang and Alan B. Fowler of IBM.
`On behalf of the IEEE Electron Devices Society, which sponsors the IEDM and Bruce Griffing, the technical
`program chairman, I wish to express my sincere appreciation and congratulations to the members of the Conference
`Committee for the outstanding job they have done in planning and organizing the 1987 meeting. The authors are to
`be commended for their efforts in preparing and presenting the high-quality papers that form the foundation of this
`endeavor. It is with great pleasure that I extend a hearty welcome to them and to all of the attendees of the 1987 IEEE
`International Electron Devices Meeting.
`
`
`
`Rick Davies
`General Chairman
`
`Page 3 of 27
`
`Page 3 of 27
`
`

`

`1987 IEDM CONFERENCE COMMITTEE
`
`Rick Davies, Conference Chairman
`Texas Instruments
`Dallas, TX, USA
`
`Bruce Griffing
`Technical Program Chairman
`General Electric R&D Center
`Schenectady, NY, USA
`
`Greg Olsen
`Publicity Chairman
`EPITAXX Inc.
`Princeton, NJ, USA
`
`Charles Sodini
`Technical Program Vice-chairman
`Massachusetts Institute of Technology
`Cambridge, MA, USA
`
`Melissa Widerkehr
`Conference Manager
`Courtesy Associates, Inc.
`Washington, D.C., USA
`
`Robert Kwasnick
`Publications Chairman
`General Electric R&D Center
`Schenectady, NY, USA
`
`Takuo Sugano
`International Arrangements Chairman
`University of Tokyo
`Toyko, Japan
`
`Livio Baldi
`International Arrangements
`Vice-chairman
`SGS
`Brianza, Italy
`
`David Myers
`Short-Course Chairman
`Sandia National Laboratories
`Albuquerque, NM, USA
`
`George Douglass
`Treasurer
`Teledyne MEC
`Arlington, VA, USA
`
`1987 IEDM Conference and
`Program Committee
`
`Seated from left to right are: Rob Kwasnick, Publications Chairman; Charlie Sodini,
`Technical Program Vice-chairman; Bruce Griffing, Technical Program Chairman;
`Standing
`Rick Davies, General Chairman; David Myers, Short-Course Chairman.
`from left to right: Melissa Widerkehr, Conference Manager; Peter Cottrell, Chair-
`man, Modeling and Simulation; Robert Symons, Chairman, Electron Tubes; Hadis
`Morkoc, Chairman, Quantum Electronics and Compound Semiconductors; Milt
`Gosney, Chairman, Integrated Circuits; Louis Parillo, Chairman, Device Technol-
`ogy; Joseph Giachino, Chairman, Detectors, Sensors & Displays; John Gammel,
`Chairman, Solid-state Devices; Reedy Langevin, Assistant Conference Manager.
`(Not pictured: Greg Olsen, Publicity Chairman; Takuo Sugano, International Ar-
`rangements Chairman; Livio Baldi, International Arrangements Vice-chairman;
`and George Douglass, Treasurer.)
`
`Page 4 of 27
`
`

`

`SUBCOMMITTEE ON DEVICE TECHNOLOGY
`
`Louis C. Parrillo, Chairman
`Motorola, Inc.
`Austin, TX, USA
`
`Y. Akasaka
`Mitsubishi Electric Corporation
`Itami City, Japan
`
`Michael Brassington
`Fairchild Research Center
`Palo Alto, CA, USA
`
`Kent Chuang
`IBM Corporation
`Yorktown Heights, NY, USA
`
`Hugh Grinolds
`Hewlett-Packard Laboratories
`Palo Alto, CA, USA
`
`Barbara A. Heath
`Digital Equipment Corporation
`Hudson, MA, USA
`
`Ping KO
`University of California at Berkeley
`Berkeley, CA, USA
`
`Dim Lee Kwong
`The University of Texas
`Austin, TX, USA
`
`Tohru Mochizuki
`Toshiba Corporation
`Kawasaki, Japan
`
`Nelson Saks
`Naval Research Laboratory
`Washington, D.C., USA
`
`Hans Schaber
`Siemens AG
`Munich, Germany
`
`Ashok Sinha
`AT&T Bell Laboratories
`Allentown, PA, USA
`
`David Spratt
`Texas Instruments
`Dallas, TX, USA
`
`SUBCOMMITTEE ON SOLID-STATE DEVICES
`
`John Gammel, Chairman
`AT&T Bell Laboratories
`Reading, PA, USA
`
`Tony Alvarez
`Motorola, Inc.
`Mesa, AZ, USA
`
`Fkitz H. Gaensslen
`IBM Corporation
`Yorktown Heights, NY, USA
`
`Kenneth F. Galloway
`University of Arizona
`Tucson, AZ, USA
`
`Fu-Chieh Hsu
`Integrated Devices Technology
`Santa Clara, CA, USA
`
`Scott Leslie
`Power-X, Inc.
`Youngwood, PA, USA
`
`Don Nelsen
`Digital Equipment Corporation
`Hudson, MA, USA
`
`Hiromichi Ohashi
`Toshiba R&D Center
`Kawasaki, Japan
`
`Susan Partrige
`GEC Research Center
`Wembley, England
`
`C.A.T. Salama
`University of Toronto
`Toronto, Canada
`
`Eiiji Takeda
`Hitachi Central Research Labs
`Tokyo, Japan
`
`Chand Viswanathan
`UCLA
`Los Angeles, CA, USA
`
`Harry Weaver
`Sandia National Labs
`Albuquerque, NM, USA
`
`Page 5 of 27
`
`

`

`SUBCOMMITTEE ON INTEGRATED CIRCUITS
`
`Milt Gosney, Chairman
`Southern Methodist University
`Dallas, TX, USA
`
`Hugo Chan
`AMB
`Fremont, CA, USA
`
`Paul Felix
`LET1
`Grenoble, France
`
`Hussein Hanafi
`IBM Corporation
`Yorktown Heights, NY, USA
`
`Osamu Kudoh
`NEC Corporation
`Kanagawa, Japan
`
`Harry Lee
`Massachusetts Institute of Technology
`Cambridge, MA, USA
`
`Fu-Tai Liou
`Thomson Company-Mostek Corporation
`Carrollton, TX, USA
`
`A. Matsukawa
`Mitsubishi Electric Corporation
`Itami, Japan
`
`David Patterson
`The Pentagon
`Washington, D.C., USA
`
`Ray RUPP
`Motorola, Inc.
`Phoenix, AZ, USA
`
`David Scott
`Texas Instruments
`Dallas, TX, USA
`
`Ritu Shrivastava
`Cypress Semiconductors
`San Jose, CA, USA
`
`David Yaney
`AT&T Bell Laboratories
`Allentown, PA, USA
`
`SUBCOMMITTEE ON QUANTUM ELECTRONICS
`AND COMPOUND SEMICONDUCTORS
`
`Hadis Morkoc, Chairman
`California Institute of Technology
`Pasadena, CA, USA
`
`D. Arch
`Honeywell Physical Sciences
`Bloomington, MN, USA
`
`Peter Asbeck
`Rockwell International
`Thousand Oaks, CA, USA
`
`H. Beneking
`University of Michigan
`Ann Arbor, MI, USA
`
`F. Capasso
`AT&T Bell Laboratories
`Murray Hill, NJ, USA
`
`J. Cooper
`Purdue University
`West LaFayette, IN, USA
`
`T. Ibgawi
`NTT
`Kanagawa, Japan
`R. Kiehl
`IBM Corporation
`Yorktown Heights, NY, USA
`
`Kam Lau
`Ortel Corporation
`Alhambra, CA, USA
`R. Nahory
`Bell Communications Research
`Red Bank, NJ, USA
`
`Phil Smith
`General Electric Company
`Syracuse, NY, USA
`
`G . Witt
`Bolling Air Force Base
`Washington, D.C., USA
`N. Yokoyama
`Fitjitsu Laboratories, Ltd.
`Atsugi, Japan
`
`H.T. Yuan
`Texas Instruments, Inc.
`Dallas, TX, USA
`
`Page 6 of 27
`
`

`

`SUBCOMMITTEE ON DETECTORS, SENSORS & DISPLAYS
`
`Joseph Giachino, Chairman
`Ford Motor Company
`Dearborn, MI, USA
`
`Peter Alexander
`Taylor Instrument Combustion
`Engineering, Inc.
`Rochester, NY, USA
`
`Phillip W. Barth
`Nova Sensor
`Santa Clara, CA, USA
`
`Donald E. Castlebeny
`General Electric Company
`Schenectady, NY, USA
`
`Rudy Dyck
`Fairchild
`Sunnyvale, CA, USA
`
`Roger Howe
`University of California at Berkeley
`Berkeley, CA, USA
`
`Shoei Kataoka
`Sharp Corporation
`Tenri City, Japan
`
`Ken Kreider
`National Bureau of Standards
`Gaithersburg, MD, USA
`
`H. Reichel
`Fraunhofer Institute Fuer
`Festkoerpertechnologie
`Munich, West Germany
`
`Andrew Robinson
`University of Michigan
`Ann Arbor, MI, USA
`
`Richard M. White
`University of California-Berkeley
`Berkeley, CA, USA
`
`SUBCOMMITTEE ON MODELING AND SIMULATION
`
`Peter Cottrell, Chairman
`IBM Corporation
`Essex Junction, VT, USA
`
`Lawrence Arledge
`Texas Instruments
`Dallas, TX, USA
`
`Peter Blakey
`Microelectronics & Computer Technology
`Corporation
`Austin, TX, USA
`
`Andrew Neurauther
`University of California at Berkeley
`Berkeley, CA, USA
`
`Mark Pinto
`AT&T Bell Laboratories
`Murray Hill, NY, USA
`
`Siegfried Selberherr
`Technical University of Vienna
`Vienna, Austria
`
`Michael Shur
`University of Minnesota
`Minneapolis, MN, USA
`
`Ken Yamaguchi
`Hitachi Limited
`Tokyo, Japan
`
`Kiyoyuki Yokoyama
`NTT
`Kanagawa, Japan
`
`Peter Zdebel
`Motorola, Inc.
`Mesa, AZ, USA
`
`End of Galley 9-more
`
`Page 7 of 27
`
`

`

`SUBCOMMITTEE ON ELECTRON TUBES
`
`Robert S. Symons, Chairman
`Litton Electron Devices
`San Carlos, CA, USA
`
`Carter Armstrong
`Naval Research Laboratory
`Washington, D.C. USA
`
`W.R. Ayers
`Varian Associates
`Palo Alto, CA, USA
`
`Mark Beard
`University of Utah
`Salt Lake City, UT, USA
`
`James Dayton
`NASA, Lewis Research Center
`Cleveland, OH, USA
`
`Georges H. Fleury
`Thomson-CSF
`Velizy-Villacouoblay, France
`
`Philip LaUy
`Teledyne MEC
`Palo Alto, CA, USA
`
`Ryuzo Ohuri
`NEC Corporation
`Kawasaki City, Japan
`
`Paul Puri
`Raytheon Company
`Waltham, MA, USA
`
`Richard Temkin
`Massachusetts Institute of Technology
`Cambridge, MA, USA
`
`Bob Woods
`Hughes Aircraft Company
`Torrance, CA, USA
`
`Page 8 of 27
`
`

`

`SESSION QUICK INDEX
`
`SESSION 1
`
`PLENARY SESSION - Invited Papers
`
`SESSION 2 DEVICE TECHNOLOGY
`
`- Selective Epitaxy and Merged Bipolar - CMOS Technology
`
`SESSION 3
`
`SOLID-STATE DEVICES - Hot Carrier Effects
`
`SESSION 4
`
`QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTOR DEVICES
`- New Heterojunction Electron Devices
`
`SESSION 5
`
`INTEGRATED CIRCUITS - High Speed/High Density Systems
`
`SESSION 6
`
`DETECTORS, SENSORS AND DISPLAYS - Image Sensor Technology-
`
`SESSION 7
`
`ELECTRON TUBES - General
`
`SESSION 8
`
`SOLID-STATE DEVICES - Advanced Bipolar Devices
`
`SESSION 9
`
`DEVICE TECHNOLOGY - Interconnect Technology
`
`SESSION 10 QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTOR DEVICES
`- Optoelectronics and Integration
`
`SESSION 11
`
`MODELING AND SIMULATION - SiiGaAs Device and Process Simulation
`
`~~
`
`SESSION 12 DETECTORS, SENSORS AND DISPLAYS
`
`- Microsensor Technology
`
`SESSION 13
`
`ELECTRON TUBES - Millimeter Wave Devices
`
`SESSION 14
`
`INTEGRATED CIRCUITS - Dynamic Memories
`
`SESSION 15
`
`DEVICE TECHNOLOGY - CMOS and Bipolar Process Integration
`
`Page 9 of 27
`
`

`

`SESSION QUICK INDEX (Cont’d)
`
`SESSION 16
`
`SOLID-STATE DEVICES - Low Temperature Device Operation
`
`SESSION 17
`
`QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTOR DEVICES
`- Pseudomorphic Heterostructure FET’s
`
`SESSION 18
`
`DETECTORS, SENSORS AND DISPLAYS - Solid-state Display & Device Technology
`
`SESSION 19 ELECTRON TUBES
`
`- Traveling Wave Tubes
`
`~~
`
`~
`
`~
`
`SESSION 20 MODELING AND SIMULATION
`
`- Hot Electron, Current Crowding and Alpha-Particle Models
`
`SESSION 21
`
`EVENING PANEL DISCUSSION - GaAs on Si Technology
`
`SESSION 22
`
`EVENING PANEL DISCUSSION - Advanced IC Interconnect Technology
`
`SESSION 23
`
`EVENING PANEL DISCUSSION
`- Application Dependency of Technology Choice - CMOS, Bipolar, BiCMOS
`
`SESSION 24 EVENING PANEL DISCUSSION
`
`- Integrating Sensors and Electronics: Where to Draw the Line?
`
`SESSION 25 INTEGRATED CIRCUITS
`
`- Static and Non-volatile Memories
`
`SESSION 26 DEVICE TECHNOLOGY
`
`- Dielectrics and Shallow Junctions
`
`SESSION 27 QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTOR DEVICES
`- High-speed Ill-V Devices
`
`~~
`
`~~
`
`~~
`
`~
`
`SESSION 28 MODELING AND SIMULATION
`
`- MOS Modeling
`
`SESSION 29 SOLID-STATE DEVICES
`
`- Discrete Power Devices
`
`~~
`
`~
`
`SESSION 30
`
`ELECTRON TUBES - Cathodes
`
`Page 10 of 27
`
`

`

`SUBCOMMITTEE ON DETECTORS, SENSORS & DISPLAYS
`
`Joseph Giachino, Chairman
`Ford Motor Company
`Dearborn, MI, USA
`
`Peter Alexander
`Taylor Instrument Combustion
`Engineering, Inc.
`Rochester, NY, USA
`
`Phillip W. Barth
`Nova Sensor
`Santa Clara, CA, USA
`
`Donald E. Castlebeny
`General Electric Company
`Schenectady, NY, USA
`
`Rudy Dyck
`Fairchild
`Sunnyvale, CA, USA
`
`Roger Howe
`University of California at Berkeley
`Berkeley, CA, USA
`
`Shoei Kataoka
`Sharp Corporation
`Tenri City, Japan
`
`Ken Kreider
`National Bureau of Standards
`Gaithersburg, MD, USA
`
`H. Reichel
`Fraunhofer Institute Fuer
`Festkoerpertechnologie
`Munich, West Germany
`
`Andrew Robinson
`University of Michigan
`Ann Arbor, MI, USA
`
`Richard M. White
`University of California-Berkeley
`Berkeley, CA, USA
`
`SUBCOMMITTEE ON MODELING AND SIMULATION
`
`Peter Cottrell, Chairman
`IBM Corporation
`Essex Junction, VT, USA
`
`Lawrence Arledge
`Texas Instruments
`Dallas, TX, USA
`
`Peter Blakey
`Microelectronics & Computer Technology
`Corporation
`Austin, TX, USA
`
`Andrew Neurauther
`University of California at Berkeley
`Berkeley, CA, USA
`
`Mark Pinto
`AT&T Bell Laboratories
`Murray Hill, NY, USA
`
`Siegfried Selberherr
`Technical University of Vienna
`Vienna, Austria
`
`Michael Shur
`University of Minnesota
`Minneapolis, MN, USA
`
`Ken Yamaguchi
`Hitachi Limited
`Tokyo, Japan
`
`Kiyoyuki Yokoyama
`NTT
`Kanagawa, Japan
`
`Peter Zdebel
`Motorola, Inc.
`Mesa, AZ, USA
`
`End of Galley 9-more
`
`Page 11 of 27
`
`

`

`SESSION QUICK INDEX (Cont’d)
`
`SESSION 31
`
`SOLID-STATE DEVICES - MOSFET Scaling
`
`~~
`
`~~
`
`~
`
`SESSION 32
`
`DEVICE TECHNOLOGY - Isolation & Lithography
`
`SESSION 33
`
`SOLICI-STATE DEVICES - High Voltage IC’s and Lateral Power Devices
`
`SESSION 34
`
`QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTOR DEVICES - Lasers
`
`~~~~
`
`~~
`
`~
`
`SESSION 35 ELECTRON TUBES
`
`- Fast Wave Devices
`
`Page 12 of 27
`
`

`

`STUDENTS: Join EDS
`(Electron Devices Society)
`
`Our Society has been involved in the progress of electronics and electrical engineer-
`ing over the past 100 years with research and development in devices and technology.
`
`EDS AREAS OF INTEREST:
`Solid State Sensors
`Compound Semiconductor Devices
`Solid State Device Phenomena
`Devices Processing and Materials
`Displays, Imaging and other Devices
`Solid State Powered High Voltage Devices
`Vacuum Devices
`Silicon Devices and Microelectronics
`
`ADVANTAGES OF EDSIIEEE MEMBERSHIP
`Student Branches
`Membership Pin and Card
`Monthly Transactions
`Local Chapters
`Professional Involvement
`Student Magazine
`Notice of Meetings
`National Lecturers
`Reduced Rates
`IEEE Spectrum
`Awards
`Student Paper Contest
`
`REQUEST STUDENT MEMBERSHIP APPLICATION FROM:
`Professor Marvin H. White
`Chapters, Membership and Education Chairperson
`Electron Devices Society
`Lehigh University
`Sherman Fairchild Center #161
`Bethlehem, PA 18015
`
`Page 13 of 27
`
`

`

`TABLE OF CONTENTS
`
`PLENARY SESSION: Invited Papers
`Monday, December 7, 9:OO a.m.
`International Ballroom
`Chairman: Bruce Griffing, General Electric R&D Center
`1.1 THE REVOLUTION IN HIGH T, SUPERCONDUCTIV-
`ITY: STATUS AND PROSPECTS FOR ELECTRONIC AP-
`PLICATIONS, M. Beasley, Stanford University, Stanford, CA
`1.2 ANALOG ICs IN THE SUBMICRON ERA: TRENDS AND
`PERSPECTIVES, P. Crray, University of California at Berke-
`ley, Berkeley, CA
`1.3 AN OVERVIEW OF E:PITAXIAL GaAs ON Si TECHNOL-
`OGY, A. Cho, AT&T 13ell Laboratories, Murray Hill, NJ
`
`SESSION 2: Device Technology-Selective Epitaxy and
`Merged Bipolar-(CMOS Technology
`Monday, December 7, 1:00 p.m.
`International Ballroom Center
`Co-Chairmen: M. Brassington, Fairchild
`P. KO, University of California, Berkeley
`
`1:00 p.m.
`INTRODUCTION
`1:05 p.m.
`2.1 NOVEL DEVICE STRUCTURES BY SELECTIVE EPI-
`TAXIAL GROWTH (SEG) (Invited Paper), J. Borland, Ap-
`plied Materials, Inc., Smta Clara, CA
`1:30 p.m.
`2.2 NOVEL SELECTIVE POLY- AND EPITAXIAL-SILICON
`GROWTH (SPEG) TECHNIQUE FOR ULSI PROCESS-
`ING, F. Mieno, A. Shimizu, S. Nakamura, T. Deguchi, N.
`Haga, I. Matsumoto, ’[. Furumura, T. Yamauchi, K. Inayoshi,
`M. Maeda, and K. Yarlagida, Fujitsu, Ltd., Kawasaki, JAPAN
`155 p.m.
`2.3 A SUBMICRON DUAL BURIED LAYER TWIN WELL
`CMOS SEG PROCESS, J. Manoliu, Fairchild Research, Palo
`Alto, CA, J. Borland, Applied Materials, Santa Clara, CA
`2:20 p.m.
`2.4 A HIGH SPEED SIJPER SELF-ALIGNED BIPOLAR-
`CMOS TECHNOLOGY, T. Chiu, G. Chin, M. Lau, R. Han-
`son, M. Morris, K. Lec:, A. Voshchenkov, R. Swartz, I? Archer,
`S. Finegan, AT&T Bell Laboratories, Holrndel, NJ
`2:45 p.m.
`0.8pm Bi-CMOS TECHNOLOGY WITH HIGH f, ION-IM-
`2.5
`PLANTED EMIlTER BIPOLAR TRANSISTOR, H. Iwai,
`G. Sasaki, Y Unno, Y. Niitsu, M. Norishima, Y Sugimoto,
`and K. Kanzaki, Toshiba Corporation, Kawasaki, JAPAN
`3:lO p.m.
`2.6 A SELF-ALIGNING POLYSILICON ELECTRODE TECH-
`LSIs, Y. Misawa, H.
`NOLOGY (SPEL) FOR FUTURE
`Homma, K. Sato, and N. Momma, Hitachi, Ltd., Ibaraki, JA-
`PA N
`
`SESSION 3: Solid Stat’e Devices-Hot Carrier Effects
`Monday, December 7, 1:00 p.m.
`International Ballroom East
`Co-Chairmen: F. Hsu, Integrated Device Technology
`E. Takeda, I-titachi Ltd.
`
`1:00 p.m.
`INTRODUCTION
`1:05 p.m.
`3.1 THE IMPACT OF GATE-DRAIN OVERLAPPED LDD
`(GOLD) FOR DEEP SUBMICRON VLSI’S, R. Izawa, T.
`Kure, S. Iijima, and E. Takeda, Hitachi, Ltd., Tokyo, JAPAN
`
`1
`
`2
`
`5
`
`10
`
`11
`
`12
`
`16
`
`20
`
`24
`
`2a
`
`32
`
`37
`
`38
`
`1:30 p.m.
`3.2 HOT CARRIER INDUCED DEGRADATION MODE DE-
`PENDING ON THE LDD STRUCTURE IN NMOSFETS,
`A. Yoshida and Y. Ushiku, Toshiba Corporation, Kawasaki,
`JAPAN
`1 5 5 p.m.
`3.3 RELATIONSHIP BETWEEN THE LOCATION OF TRAP-
`PED HOLES AND INTERFACE STATE GENERATION IN
`THE Si/Si02 SYSTEM, S. Wang, J. Sung, and S. Lyon, Prince-
`ton University, Princeton, NJ
`2:20 p.m.
`3.4 QUASI-STATIC SIMULATION OF HOT-ELECTRON-IN-
`DUCED MOSFET DEGRADATION UNDER AC (PULSE)
`STRESS, M. Kuo, K. Seki, P. Lee, J. Choi, l? KO, and C. Hu,
`University of California, Berkeley, CA
`2:45 p.m.
`IN SUBMI-
`3.5 ASYMMETRICAL HIGH FIELD EFFECTS
`CRON MOSFETS, J. Pfiester, and E Baker, Motorola, Inc.,
`Austin, TX
`3:lO p.m.
`3.6 HOT CARRIER AGING IN TWO LEVEL METAL PRO-
`CESSING, M. Chen, C. Leung, W. Cochran, S . Jain, H. Hey,
`H. Chew, and C. Dziuba, AT&T Bell Laboratories, Allentown,
`PA
`
`SESSION 4: Quantum Electronics and Compound Sem-
`iconductor Devices-New Heterojunction
`Elec-
`tron Devices
`Monday, December 7, 1:OO p.m.
`International Ballroom West
`Co-Chairmen: E Capasso, AT&T Bell Laboratories
`J. Cooper, Purdue University
`
`1:00 p.m.
`INTRODUCTION
`1:05 p.m.
`4.1 NOVEL HETEROJUNCTION DEVICES (Invited Paper), V.
`Narayanamurti, Sandia National Laboratories, Albuquerque,
`NM
`1:30 p.m.
`WELL
`POWER-OPTIMIZED DESIGN OF QUANTUM
`4.2
`OSCILLATORS, V. Kesan, T. Linton, C. Maziar, D. Neikirk,
`D. Miller, E? Blakey, and B. Streetman, The University of Texas,
`Austin, TX
`155 p.m.
`OBSERVATION OF RESONANT TUNNELING
`
`
`
`4.3
`THROUGH A COMPOSITIONALLY GRADED PARA-
`BOLIC QUANTUM WELL, E Capasso, S. Sen, A. Gossard,
`R. Spah, A. Hutchinson, and G. Chu, AT&T Bell Laborato-
`ries, Murray Hill, NJ
`2:20 p.m.
`4.4 DEVICE PHYSICS OF QUANTUM-WELL HETEROS-
`TRUCTURE MI’SFET’s, R. Kiehl, D. Frank, S. Wright, and
`J. Magerlein, IBM, Yorktown Heights, NY
`2:45 p.m.
`4.5 A NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEG-
`ATIVE RESISTANCE DEVICE (BUNDR), K. Yarn, Y.
`Wang, C. Chang, and M. Jame, National Cheng Kung Univer-
`sity, Taiwan, REPUBLIC OF CHINA
`3:lO p.m.
`ELECTRON GAS BASE
`4.6 A NEW TWO-DIMENSIONAL
`TRANSISTOR (ZDEG-HBT), T. Usagawa, M. Yamane, T.
`Mishima, S. Goto, M. Kobayashi, M. Kawata, and S. Taka-
`hashi, Hitachi, Ltd., Tokyo, JAPAN
`3:35 p.m.
`ELECTRICAL PROPERTIES OF THERMALLY AN-
`4.7
`NEALED P-GaAs/n-Si HETEROJUNCTIONS AND THE
`IMPLICATIONS FOR A GaAs-Si HETEROJUNCTION BI-
`POLAR TRANSISTOR, J . Chen, M. Unlu, T. Won, G.
`Munns, H. Morkoc, University of Illinois, Urbana, IL, and D.
`Verret, Texas Instruments, Houston, TX
`
`42
`
`46
`
`47
`
`51
`
`55
`
`59
`
`60
`
`62
`
`66
`
`70
`
`74
`
`78
`
`82
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`Page 14 of 27
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`

`

`
`
`Dallas,
`
`
`
`
`
`
`
`SESSION 5: Integrated Circuits-High Speed/High
`Density
`Monday, December 7, 1:OO p.m.
`Jefferson Room
`Co-Chairmen: D. Yaney, AT&T Bell Laboratories
`H. Lee, MIT
`
`1:00 p.m.
`INTRODUCTION
`1:05 p.m.
`5.1 GeAs-ON-SILICON INTEGRATED CIRCUITS; SAVIOR
`FOR GaAs ? OR FOR SI ? (Invited Paper), H. Shichijo and
`R. Matyi, Texas Instruments, Inc., Dallas, TX
`1:30 p.m.
`5.2 WAVEFORM MEASUREMENTS IN HIGH SPEED SILI-
`CON BIPOLAR CIRCUITS USING A PICOSECOND PHO-
`TOELECTRON SCANNING ELECTRON MICROSCOPE,
`P. May, J. Halbout, C. Chuang, and G . Li, IBM ?: J. Watson
`
`Research Center;
`
`Yorktown Heights,
`N Y
`155 p.m.
`POTENTIAL OF BIPOLAR COMPLEMENTARY DE-
`5.3
`VICE/CIRCUIT TECHNOLOGY (Invited Paper), S. Wied-
`
` Boeblingen, mann, IBM Laboratories,
`GERMANY
`
`2:20 p.m.
`5.4 HIGH-DENSITY, LARGE SCALE INTERCONNECTION
`FOR IMPROVED VLSI SYSTEM PERFORMANCE (In-
`vited Paper), W. Bertram, AT&T Bell Laboratories, Murray
`Hill, NJ
`2:45 p.m.
`5.5 ORTHOGONAL CHIP MOUNT-A 3D HYBRID WAFER
`SCALE INTEGRATION TECHNOLOGY, S. Malhi, H.
`Davis, R. Stierman, K. Bean, C. Driscoll, €? Chatterjee, Texas
`
`
`Instruments, Inc.,
`TX
`3:lO p.m.
`5.6 NEURAL NETWORK BASED FEED-FORWARD HIGH
`DENSITY ASSOCIATIVE MEMORY, T. Daud, J. Lamb, A.
`Moopenn, R. Ramesham, and A. Thakoor, California Institute
`
`of Technology, Pasadena,
`
`CA
`3:35 p.m.
`5.7 THREE DIMENSIONAL IC FOR HIGH PERFORMANCE
`IMAGE SIGNAL PROCESSOR, T. Nishimura, Y. Inoue, K.
`Sugahara, S. Kusunoki, T. Kumamoto, S. Nakagawa, M. Na-
`kaya, Y Horiba, and Y Akasaka, Mitsubishi Electric Corpo-
`ration,
`
`
`
`SESSION 6: Detectors, Sensors, and Displays-Image
`Sensor
`Monday, December 7, 1:00 p.m.
`Georgetown Room
`Co-Chairmen: R. Dyck, Fairchild
`A. Robinson, University of Michigan
`
`87
`
`88
`
`92
`
`%
`
`100
`
`104
`
`107
`
`111
`
`115
`
`1:OO p.m.
`INTRODUCTION
`1:05 p.m.
`6.1 A HIGH SENSITIVITY OUTPUT AMPLIFIER FOR CCD
`IMAGE SENSOR, Y. Matsunaga, M. Iesaka, S. Oosawa, S.
`Manabe, N. Harada, and N. Suzuki, VLSI Research Center,
`Kawasaki,
`1:30 p.m.
`6.2 A 1.4 MILLION ELEMENT, FULL FRAME CCD IMAGE
`SENSOR WITH VERTICAL OVERFLOW DRAIN FOR
`ANTI-BLOOMING AND LOW COLOR CROSSTALK, D.
`Nichols, N! Chang, B. Burkey, E. Stevens, E. Trabka, D. Lo-
`see, T. Tredwell, C. Stancampiano, T. Kelly, R. Khosla, T. Lee,
`
`
`Eastman Kodak Company,
`Rochester, N Y
`1:55 p.m.
`IrSi SCHOTTKY-BARRIER INFRARED IMAGE SEN-
`6.3
`SOR, N. Yutani, M. Kimata, M. Denda, S. Iwade, and N.
`Tsubouchi, Mitsubishi Electric Corporation, Hyogo, JAPAN W
`
`116
`
`120
`
`2:20 p.m.
`PERFORMANCES OF A MULTIPLEXED LINEAR AR-
`6.4
`RAY OF 300 InGaAs PHOTODIODES, J. Moy, J. de Ca-
`chard, s. Chaussat, and J. Chabbal, Thomson-CSE Boulogne-
`Billancourt, FRANCE, and M. Poisson, Laboratoires Centraux
`
`
` de Recherche
`(LCR), Orsay, FRANCE
`2:45 p.m.
`ENHANCEMENT MODE HgCdTe MISFETs AND CIR-
`6.5
`CUITS FOR FOCAL PLANE APPLICATIONS, R. Schiebel,
`
`Texas Instruments, Dallas, Inc.,
`
`
`TX
`3:lO p.m.
`6.6 OVERLAPPING SCHOTTKY GATE CCDs ON GaAs
`FORMED BY ANODIC OXIDATION, P. Kosel, D. Katzer,
`R. Poore, E. Miller, University of Cincinnati, Cincinnati, OH 136
`SESSION 7: Electron 'Jhbes-General
`Monday, December 7, 1:00 p.m.
`Thoroughbred Room
`Co-Chairmen: R. Symons, Litton Electron Devices
`R. Woods, Hughes Aircraft Co.
`
`128
`
`132
`
`141
`
`1:OO p.m.
`INTRODUCTION
`1:05 p.m.
`7.1 EUROPEAN MICROWAVE TUBES: BUSINESS AND
`TECHNOLOGY (Invited Paper), R. Metivier, Thomson-CSE
`Boulogne-Billancourt, FRANCE
`1:30 p.m.
`7.2 A MODULAR SHADOW-GRIDDED HIGH POWER
`SWITCH TUBE, R. True, R. Hansen, H. Hjelm, L. Man-
`
`dolfo, Litton Industries,
`
`Sun Carlos, CA
`1 5 5 p.m.
`AT
`7.3 CROSSATRON (TM) SWITCH DEVELOPMENT
`HUGHES ELECTRON DYNAMICS DIVISION (HEDD),
`M. Tracy, HEDD, Torance, CA and R. Schumacher, Hughes
`
`
`Research Laboratories, Malibu,
`CA
`2:20 p.m.
`CAVITY'" KLYS-
`7.4 AN EXPERIMENTAL CLUSTERED-
`TRON, R. Symons, B. Arfin, R. Boesenberg, €? Ferguson, M.
`Kirshner, and J. Vaughan, Litton Industries, San Carlos, CA
`2:45 p.m.
`7.5 KLYSTRON PERFORMANCE USING A MULTISTAGE
`DEPRESSED COLLECTOR, E. McCune, Varian Associates,
`CA
`
`Inc., Palo Alto,
`3:lO p.m.
`A REENTRANT
`SIMULATION AND ANALYSIS OF
`7.6
`PLANAR MAGNETRON, L. Ludeking, Mission Research
`Corporation, Alexandria, VA, and G . Thomas, Varian-Beverly
`Microwave Division, Beverly, MA, and N! Bollen, Mission Re-
`
`
`search Corporation, Alexandria, VA
`
`
`3:35 p.m.
`ANALYSIS
`7.7 COUPLED BACK-STRAPPED BAR-LINE
`FOR LOW-NOISE CFA's, N. Dionne, Raytheon Company,
`Waltham, M A
`
`SESSION 8: Solid State Devices-Advanced Bipolar
`Devices
`Tuesday, December 8, 9:OO a.m.
`International Ballroom Center
`Co-Chairmen: A. Alvarez, Cypress
`S. Partrige, GEC Research Center
`
`142
`
`145
`
`149
`
`153
`
`157
`
`160
`
`164
`
`169
`
`9:00 a.m.
`INTRODUCTION
`9:05 a.m.
`PROCESS AND DEVICE RELATED SCALING CONSID-
`8.1
`ERATIONS FOR POLYSILICON-EMITTER BIPOLAR
`TRANSISTORS, H. Schaber, J. Bieger, T. Meister, K. Ehinger,
`and R. Kakoschke, Siemens AG, Munich, FEDERAL RE-
`PUBLIC OF GERMANY
`9:30 a.m.
`8.2 ON THE NARROW-EMITTER EFFECT OF ADVANCED
`SHALLOW PROFILE BIPOLAR TRANSISTORS, G. Li,
`C. Chuang, T. Chen, and T. Ning, IBM ?: J . Watson Research
`
`Center, Yorktown Heights,
`
`NY
`
`170
`
`174
`
`Page 15 of 27
`
`

`

`Heights,
`
`
`
`
`
`178
`
`182
`
`FRG
`
`955 a.m.
`8.3
`TRANSIENT IMPOSED SCALING CONSIDERATIONS IN
`ADVANCED NARROW-EMI'ITER BIPOLAR TRANSIS-
`TORS, C. Chuang, I.BM T J. Watson Research Center, York-
`town
`NY
`10:20 a.m.
`EMI'ITER BIIPOLAR HOT CARRIER EFFECTS IN
`8.4 POLY
`AN ADVANCED BICMOS TECHNOLOGY, S. Joshi, R.
`Lahri, and C. Lage, Fairchild Semiconductoq Puyallup, WA
`10:45 a.m.
`8.5 MICRO-CRYSTALLINE HETERO-EMITTER WITH
`HIGH INJECTION ]EFFICIENCY FOR Si HBT, K. Sasaki,
`T. Fukazawa, and S. l'urukawa, Tokyo Institute of Technology,
`Yokohama,
`11:lO a.m.
`8.6 A HIGH CURRENT GAIN Si HBT WITH A HYDROGEN-
`ATED MICRO-CRYSTALLINE Si EMI'ITER, H. Fujioka,
`S. Ri, K. Takasaki, K. Fujino, and Y. Ban, Fujitsu, Ltd., Ka-
`wasaki, JAPAN
`11:35 a.m.
`SILICON
`8.7 A NOVEL ION-IMI?LANTED AMORPHOUS
`PROGRAMMABLIS ELEMENT, Y. Shacham-Diamand,
`Technion-Z.I. T., Haifa, ISRAEL, A . Sinar, E. Sirkin, I.
`Blech, and L. Gerzberg, Zoran Corporation, Santa Clara, CA 194
`
`186
`
`190
`
`SESSION 9: Device Ikchnology-Interconnect Tech-
`nology
`Tuesday, December 8, 9:OO a.m.
`International Ballroom East
`Co-Chairmen: B. Heath, Digital Equipment Corp.
`D. Kwong, University of Texas
`
`9:OO a.m.
`INTRODUCTION
`9:05 a.m.
`9.1 RECENT DEVELOPMENT IN MULTILEVEL INTER-
`CONNECT TECHNOLOGY, (Invited Paper), H. Eggers and
`K. Hieber, Siemens AG, Munich, FEDERAL REPUBLIC OF
`GERMANY
`9:30 a.m.
`9.2
`RELIABLE TUNGSTEN ENCAPSULATED AI-Si INTER-
`CONNECTS FOR SUBMICRON MULTILEVEL INTER-
`CONNECTION, H. Yamamoto, S. Fujii, T. Kakiuchi, K.
`Yano, and T. Fujita, Matsushita Electric, Osaka, JAPAN
`955 a.m.
`9.3
`SUBMICRON WIRING TECHNOLOGY WITH TUNG-
`STEN AND PLANARIZATION, C. Kaanta, W. Cote, J.
`Cronin, P. Lee, T. Wright, and K. Holland, IBM General Tech-
`
`
`
`
`
`
` nology Division, Essex Junction,
`VT
`10:20 a.m.
`9.4
`SELECTIVE CVD TUNGSTEN SILICIDE FOR VLSI AP-
`PLICATIONS, T. Ohba, S. Inoue, and M. Maeda,
`Fujitsu,
`JAPAN
`
`Ltd., Kawasaki,
`10:45 a.m.
`9.5 A HIGHLY RELIABLE SELECTIVE CVD-W UTILIZING
`SiH4 REDUCTION I'OR VLSI CONTACTS, H. Kotani, T.
`Tsutsumi, J. Komori, and S. Nagao, Mitsubishi Electric Cor-
`poration,
`
`
`
`Hyogo,
`
`SESSION 10: Quantum Electronics and Compound
`Semiconductor Devices-Optoelectronics and In-
`tegration
`Tuesday, December 8,9:00 a.m.
`Jefferson Room
`Co-Chairmen: R. Nahory, Bell Communications Research
`G. Witt, Bolling AFB
`
`9:OO a.m.
`INTRODUCTION
`CA
`
`9:05 a.m.
`OPTICAL INTERCONNECT TECHNOL-
`10.1 ADVANCES IN
`OGY (Invited Paper), F. Leonberger, United Technologies Re-
`
`
`
`
`search Center, East Hm-ford,
`CT
`
`199
`
`200
`
`205
`
`209
`
`213
`
`217
`
`221
`
`222
`
`9:30 a.m.
`10.2 PLANAR STRUCTURE OPTOELECTRONIC INTE-
`GRATED CIRCUITS: TOWARDS ADVANCED OPTICAL
`PROCESSING AND COMMUNICATION (Invited Paper),
`0. Wada, Fujitsu Laboratories, Ltd., Atsugi, JAPAN
`955 a.m.
`10.3 5.2 GHz MONOLITHIC GaAs OPTOELECTRONIC RE-
`CEIVER, B. Van Zeghbroeck, C. Harder, H. Jackel, H. Meier,
`P. Vettiger, and P. Wolf, IBM, Ruschlikon, SWITZERLAND,
`J. Halbout, IBM, Yorktown Heights, NI: W Patrick, Fraun-
`
`hofer Institut,
`10:20 A.M.
`10.4 WIDE-BANDWIDTH InPhGaAsPlInGaAs AVALANCHE
`PHOTODIODES GROWN BY CHEMICAL BEAM EPI-
`TAXY, J. Campbell, W. Tsang, G . Qua, B. Johnson, and J.
`
`Bowers, AT&T Bell Laboratories, Holmdel,
`NJ
`10:45 a.m.
`lOum
`10.5 PHOTOEXCITED COHERENT TUNNELING IN
`MULTIQUANTUM WELL PHOTODETECTOR, K. Choi,
`B. Levine, C. Bethea, J. Walker, and R. Malik, AT&T Bell
`Laboratories, Murray Hill, NJ
`11:lO a.m.
`10.6 HIGH SPEED MODULATION AND CW OPERATION OF
`AIGaAdGaAs LASERS ON Si, H. Chen, J. Paslaski, A.
`Ghaffari, H. Wang, H. Morkoc, A. Yariv, California Institute
`of Technology, Pasadena, CA
`11:35 a.m.
`10.7 OPTICAL AND ELECTRICAL CHARACTERISTICS OF
`GaAdAIGaAs GRIN-SCH LASERS GROWN SELEC-
`TIVELY BY MBE ON Si02-PA'ITERNED SUBSTRATE, M.
`Wu, Y. Lo, and S. Wang, University of California, Berkeley,
`CA and J. Hong, W Wang, and L. Chang, IBM T J . Watson
`
`
`
`Research Center, Yorktown Heights,
`NY
`
`SESSION ll: M