Structural Analysis – Sample Report
`Process Analysis
`
`3-67
`
`Figure 3.5.11 shows the TEM-EDS spectrum of the NiSi used on the polysilicon
`gates.
`
`Figure 3.5.11TEM-EDS Spectrum of Gate Silicide
`Figure 3.5.11 TEM-EDS Spectrum of Gate Silicide
`
`Si
`
`Gate silicide - NiSi
`
`Ni
`
`C
`
`O
`
`6000
`
`5000
`
`4000
`
`3000
`
`2000
`
`1000
`
`Counts
`
`Ni
`
`Ni
`
`8
`
`10
`
`0
`
`0
`
`2
`
`6
`4
`Energy (keV)
`
`Figure 3.5.11 TEM-EDS Spectrum of Gate Silicide
`
`Page 101 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-68
`
`3.6 Isolation
`The XXXX uses shallow trench isolation (STI). The minimum width STI used on the
`part is 0.10 µm wide. The observed dimensions of the STI are listed in Table 3.6.1.
`
`Table 3.6.1
`
`Observed Isolation Dimensions
`
`Feature
`Minimum width STI
`STI thickness - beneath poly
`STI thickness - beneath field
`
`3.6.1 Observed Isolation Dimensions
`
`Size (µm)
`0.10
`0.32
`0.27
`
`Table 3.6.1 Observed Isolation Dimensions
`
`Page 102 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-69
`
`Figure 3.6.1 shows a TEM image of the 0.10 µm minimum width STI.
`
`Figure 3.6.1Minimum Width STI – TEM
`Figure 3.6.1 Minimum Width STI – TEM
`
`NiSi
`
`polysilicon
`
`Si substrate
`
`NiSi
`
`104 nm
`
`STI
`
`Figure 3.6.1 Minimum Width STI – TEM
`
`Page 103 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-70
`
`Figure 3.6.2 shows the STI thickness. The STI is 0.32 µm thick beneath the
`polysilicon lines, and 0.27 µm thick where it was not protected during the sidewall
`spacer over etch.
`
`Figure 3.6.2STI Thickness – TEM
`Figure 3.6.2 STI Thickness – TEM
`
`M1
`
`W
`contact
`
`0.18 µm
`
`poly
`gate
`
`0.27 µm
`
`0.32 µm
`
`STI
`
`Figure 3.6.2 STI Thickness – TEM
`
`Page 104 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-71
`
`Figure 3.6.3 shows a TEM view of poly over the 0.32 µm thick STI.
`
`Figure 3.6.3STI Beneath Poly – TEM
`Figure 3.6.3 STI Beneath Poly – TEM
`
`W contact
`
`poly
`
`0.11 µm
`
`0.32 µm
`
`Figure 3.6.3 STI Beneath Poly – TEM
`
`Page 105 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-72
`
`3.7 Wells and Substrate
`The XXXX uses a twin well process, in a P-epitaxial layer on a P-type substrate.
`Table 3.7.1 lists the measured well depths, as determined by SCM.
`
`Table 3.7.1
`
`Die Thickness and Well Depths
`
`Well
`Logic N-wells
`Logic P-wells
`P-epitaxial layer
`Die thickness
`
`3.7.1 Die Thickness and Well Depths
`
`Thickness (µm)
`~2.7
`~0.9
`~3.9
`300
`
`Table 3.7.1 Die Thickness and Well Depths
`
`Page 106 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-73
`
`Figure 3.7.1 is a low magnification SCM image showing the device well structure.
`The SCM gives a negative (yellow) response for N-type material and positive
`(purple-blue) response for P-type material. Dielectrics and undoped materials,
`such as the STI, give a null response (pink).
`
`The image shows the logic N and P-wells in an approximately 3.9 µm deep
`P-epitaxial layer on a P-type substrate.
`
`Figure 3.7.1SCM of Wells and Substrate
`Figure 3.7.1 SCM of Wells and Substrate
`
`STI
`
`~3.9 µm
`
`N-well
`
`P-well
`
`P-type substrate
`
`P-type
`
`highly doped /
`undoped
`
`N-type
`
`Figure 3.7.1 SCM of Wells and Substrate
`
`Page 107 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-74
`
`Figure 3.7.2 shows an SCM view of an approximately 2.7 µm deep N-well.
`
`Figure 3.7.2SCM of N-Well
`Figure 3.7.2 SCM of N-Well
`
`P-type
`
`highly doped /
`undoped
`
`N-type
`
`STI
`
`P-well
`
`P-epi
`
`N-well
`
`~2.7 µm
`
`P-type substrate
`
`Figure 3.7.2 SCM of N-Well
`
`Page 108 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-75
`
`Figure 3.7.3 shows an SCM image of an approximately 0.9 µm deep embedded
`P-well.
`
`Figure 3.7.3SCM of Embedded P-Well
`Figure 3.7.3 SCM of Embedded P-Well
`
`~0.9 µm
`
`N-well
`
`P-type
`
`highly doped /
`undoped
`
`N-type
`
`Figure 3.7.3 SCM of Embedded P-Well
`
`Page 109 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-76
`
`Figure 3.7.4 is a TEM diffraction pattern taken of the silicon channel region, just
`below a CMOS gate. The indexed diffraction spots are reflections from the <001>
`direction. This indicates that the transistors are oriented with their channels in one
`of the<100> directions, as opposed to the more conventional <110> orientation.
`
`Figure 3.7.4TEM Diffraction Pattern – Si Channel Region
`Figure 3.7.4 TEM Diffraction Pattern – Si Channel Region
`
`(-2,2,0)
`
`45°
`
`(0,4,0)
`
`(-2,-2,0)
`
`primary beam
`0 degrees diffraction
`
`(2,2,0)
`
`(0,-4,0)
`
`(2,-2,0)
`
`Figure 3.7.4 TEM Diffraction Pattern – Si Channel Region
`
`Page 110 of 161
`
`

`

`Structural Analysis – Sample Report
`Process Analysis
`
`3-77
`
`Figure 3.7.5 shows the TEM-EDS spectrum of the Si substrate.
`
`Figure 3.7.5TEM-EDS Spectrum of Si Substrate
`Figure 3.7.5 TEM-EDS Spectrum of Si Substrate
`
`Si
`
`Si substrate
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 3.7.5 TEM-EDS Spectrum of Si Substrate
`
`Page 111 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-1
`
`4 High Density (HD) 6T SRAM Analysis
`4.1 HD 6T SRAM Schematic and Layout Analysis
`Figure 4.1.1 is a schematic of the HD 6T SRAM.
`
`WL
`
`BL
`
`T5
`
`Access
`
`Figure 4.1.1HD 6T SRAM Schematic
`Figure 4.1.1 HD 6T SRAM Schematic
`
`VDD
`
`T3
`
`T4
`
`PMOS
`Pull-Up
`
`NMOS
`Pull-Down
`
`T1
`
`T2
`
`T6
`
`Access
`
`BL
`
`Figure 4.1.1 HD 6T SRAM Schematic
`
`Page 112 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-2
`
`Figure 4.1.2 is a SEM micrograph of the HD 6T SRAM at metal 3. Metal 3 forms
`the 0.20 µm wide wordlines, running horizontally across the image, and the VSS
`distribution lands. The 0.38 µm x 1.1 µm box, annotated on this and subsequent
`images, represents the footprint of a 0.42 µm2 unit cell.
`
`Figure 4.1.2HD 6T SRAM at Metal 3
`Figure 4.1.2 HD 6T SRAM at Metal 3
`
`V
`SS
`
`WL
`
`M3
`
`0.20 µm
`
`0.38 µm
`
`V
`SS
`
`1.1 µm
`
`Figure 4.1.2 HD 6T SRAM at Metal 3
`
`Page 113 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-3
`
`Figure 4.1.3 is a plan-view SEM micrograph of the HD 6T SRAM at the via 2 level.
`
`Figure 4.1.3HD 6T SRAM at Via 2s
`Figure 4.1.3 HD 6T SRAM at Via 2s
`
`M2
`
`via 2
`
`V
`DD
`
`BL
`
`V
`SS
`
`WL
`
`BL
`
`WL
`
`V
`SS
`
`Figure 4.1.3 HD 6T SRAM at Via 2s
`
`Page 114 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-4
`
`Figure 4.1.4 is a plan-view SEM micrograph of the HD 6T SRAM at metal 2.
`Metal 2 forms the 0.16 µm wide VDD lines, and the 0.12 µm wide bitlines running
`vertically in the image. Metal 2 also forms the wordline and VSS distribution lands.
`
`Figure 4.1.4HD 6T SRAM at Metal 2
`Figure 4.1.4 HD 6T SRAM at Metal 2
`
`M1
`
`V
`SS
`
`V
`DD
`
`BL
`
`WL
`
`BL
`
`WL
`
`V
`SS
`
`0.12 µm
`
`0.16 µm
`
`Figure 4.1.4 HD 6T SRAM at Metal 2
`
`Page 115 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-5
`
`Figure 4.1.5 is a plan-view SEM micrograph of the HD 6T SRAM at the via 1 level.
`
`Figure 4.1.5HD 6T SRAM at Via 1s
`Figure 4.1.5 HD 6T SRAM at Via 1s
`
`cell cross-connect
`
`W via 1
`
`M1
`
`SSV
`
`V
`DD
`
`BL
`
`WL
`
`BL
`
`V
`DD
`
`WL
`
`V
`SS
`
`Figure 4.1.5 HD 6T SRAM at Via 1s
`
`Page 116 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-6
`
`Figure 4.1.6 is a plan-view SEM micrograph of the HD 6T SRAM at metal 1.
`Metal 1 forms the cell distribution lands and cell cross-connect. The minimum
`width metal 1 is 0.08 µm in the HD 6T SRAM.
`
`Figure 4.1.6HD 6T SRAM at Metal 1
`Figure 4.1.6 HD 6T SRAM at Metal 1
`
`cell cross-connect
`
`M1
`
`WL
`
`V
`SS
`
`V
`DD
`
`BL
`
`WL
`
`BL
`
`V
`DD
`
`V
`SS
`
`0.08 µm
`
`Figure 4.1.6 HD 6T SRAM at Metal 1
`
`Page 117 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-7
`
`Figure 4.1.7 is a plan-view SEM micrograph of the HD 6T SRAM at poly. The
`location of the NMOS pull-down (T1, T2), PMOS pull-up (T3, T4), and NMOS
`access (T5, T6) transistors are indicated. Borderless contacts are employed for
`the PMOS (T3, T4) gates. The SRAM cell transistor sizes are listed in Table 4.2.1.
`
`The PMOS transistors in the HD 6T SRAM do not use the compressive nitride
`stress liner, presumably to save space.
`
`Figure 4.1.7HD 6T SRAM at Poly
`Figure 4.1.7 HD 6T SRAM at Poly
`
`poly gate
`
`borderless
`contact
`
`conventional
`W contact
`
`V
`SS
`T2
`
`T6
`BL
`
`V
`DD
`T4
`
`T3
`V
`DD
`
`BL
`T5
`T1
`V
`SS
`
`WL
`
`WL
`
`Figure 4.1.7 HD 6T SRAM at Poly
`
`Page 118 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-8
`
`Figure 4.1.8 is a plan-view SEM micrograph of the HD 6T SRAM at active silicon.
`The minimum width isolation between active silicon islands is 0.06 µm.
`
`Figure 4.1.8HD 6T SRAM at Active Silicon
`Figure 4.1.8 HD 6T SRAM at Active Silicon
`
`isolation
`oxide
`
`NMOS
`
`PMOS
`
`NMOS
`
`T2
`T6
`
`T4
`
`T3
`
`T5
`
`T1
`
`0.10 µm
`0.06 µm
`0.20 µm
`
`0.09 µm
`
`Figure 4.1.8 HD 6T SRAM at Active Silicon
`
`Page 119 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-9
`
`4.2 HD 6T SRAM Cross-Section Analysis
`
`Table 4.2.1
`
`6T SRAM Transistor Sizes
`
`4.2.1 6T SRAM Transistor Sizes
`
`Gate Length
`Transistor
`T5, T6 (NMOS access)
`63 nm
`T1, T2 (NMOS pull-down)
`63 nm
`T3, T4 (PMOS pull-up)
`57 nm
`* Gate width dimension derived from plan-view SEM image
`
`Gate Width*
`0.10 µm
`0.20 µm
`0.09 µm
`
`Table 4.2.1 6T SRAM Transistor Sizes
`
`Page 120 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-10
`
`Figure 4.2.1 is a TEM micrograph of the NMOS access and pull-down transistors.
`
`Figure 4.2.1TEM Overview of NMOS Access and Pull-Down Transistors
`Figure 4.2.1 TEM Overview of NMOS Access and Pull-Down Transistors
`
`BL
`
`+
`N
`
`cell
`cross-
`connect
`
`NMOS
`access
`
`T6
`
`NMOS
`pull-
`down
`
`T2
`
`+
`N
`
`0.38 µm
`
`VSS
`
`+
`
`N
`
`Figure 4.2.1 TEM Overview of NMOS Access and Pull-Down Transistors
`
`Page 121 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-11
`
`Figure 4.2.2 is a TEM micrograph of a 63 nm gate length NMOS transistor (T2
`or T6).
`
`Figure 4.2.2TEM of NMOS Transistor (T2 or T6)
`Figure 4.2.2 TEM of NMOS Transistor (T2 or T6)
`
`25 nm
`
`NMOS
`(T2 or T6)
`
`35 nm
`
`63 nm
`
`Figure 4.2.2 TEM of NMOS Transistor (T2 or T6)
`
`Page 122 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-12
`
`Figure 4.2.3 is a TEM micrograph of the PMOS pull-up transistor and butted contact.
`
`Figure 4.2.3TEM Overview of PMOS Pull-Up Transistor
`Figure 4.2.3 TEM Overview of PMOS Pull-Up Transistor
`
`VDD
`
`cell
`cross-
`connect
`
`PMOS
`pull-up
`
`T3
`
`0.38 µm
`
`T2/T4
`gate
`poly
`
`Figure 4.2.3 TEM Overview of PMOS Pull-Up Transistor
`
`Page 123 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-13
`
`Figure 4.2.4 is a TEM micrograph of the 57 nm gate length PMOS pull-up
`transistor (T3).
`
`Figure 4.2.4TEM of PMOS Pull-Up Transistor
`Figure 4.2.4 TEM of PMOS Pull-Up Transistor
`
`49 nm
`
`53 nm
`
`PMOS
`(T3)
`
`57 nm
`
`eSiGe
`
`eSiGe
`
`Figure 4.2.4 TEM of PMOS Pull-Up Transistor
`
`Page 124 of 161
`
`

`

`Structural Analysis – Sample Report
`High Density (HD) 6T SRAM Analysis
`
`4-14
`
`Figure 4.2.5 is a TEM micrograph of the 1.5 nm thick SRAM transistor gate
`dielectric, comparable to the 1.4 nm thick logic transistor gate oxide.
`
`Figure 4.2.5TEM of SRAM Transistor Gate Dielectric
`Figure 4.2.5 TEM of SRAM Transistor Gate Dielectric
`
`gate
`poly
`
`gate dielectric
`
`1.5 nm
`
`SOI
`
`Figure 4.2.5 TEM of SRAM Transistor Gate Dielectric
`
`Page 125 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-1
`
`5 Materials Analysis
`5.1 TEM-EDS Analysis of BEOL Dielectrics
`Figure 5.1.1 is a TEM-EDS spectrum of the silicon nitride ILD 10-3, which also
`serves as the final passivation.
`
`Figure 5.1.1TEM-EDS Spectrum of ILD 10-3
`Figure 5.1.1 TEM-EDS Spectrum of ILD 10-3
`
`ILD 10-3 SiN
`
`Si
`
`N
`
`800
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.1 TEM-EDS Spectrum of ILD 10-3
`
`Page 126 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-2
`
`Figure 5.1.2 is a TEM-EDS spectrum of the undoped oxide ILD 9-2. This spectrum
`is representative of ILD 10-2.
`
`Figure 5.1.2TEM-EDS Spectrum of ILD 9-2 (ILD 10-2)
`Figure 5.1.2 TEM-EDS Spectrum of ILD 9-2 (ILD 10-2)
`
`Si
`
`ILD (9-10)-2 SiO
`
`O
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.2 TEM-EDS Spectrum of ILD 9-2 (ILD 10-2)
`
`Page 127 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-3
`
`Figure 5.1.3 is a TEM-EDS spectrum of the FSG ILD 9-3.
`
`Figure 5.1.3TEM-EDS Spectrum of ILD 9-3
`Figure 5.1.3 TEM-EDS Spectrum of ILD 9-3
`
`Si
`
`ILD 9-3 SiOF
`
`O
`
`F
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.3 TEM-EDS Spectrum of ILD 9-3
`
`Page 128 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-4
`
`Figure 5.1.4 is a TEM-EDS spectrum of the SiCN ILD 8-1. This spectrum is
`representative of ILD 9-1 and ILD 10-1.
`
`Figure 5.1.4TEM-EDS Spectrum of ILD 8-1 (ILD 9-1, ILD 10-1)
`Figure 5.1.4 TEM-EDS Spectrum of ILD 8-1 (ILD 9-1, ILD 10-1)
`
`Si
`
`ILD (8-10)-1 SiCN
`
`C
`N
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.4 TEM-EDS Spectrum of ILD 8-1 (ILD 9-1, ILD 10-1)
`
`Page 129 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-5
`
`Figure 5.1.5 is a TEM-EDS spectrum of the FSG ILD 8-5.
`
`Figure 5.1.5TEM-EDS Spectrum of ILD 8-5
`Figure 5.1.5 TEM-EDS Spectrum of ILD 8-5
`
`Si
`
`ILD 8-5 SiOF
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`O
`
`F
`
`1
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`0
`
`0
`
`Counts
`
`Figure 5.1.5 TEM-EDS Spectrum of ILD 8-5
`
`Page 130 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-6
`
`Figure 5.1.6 is a TEM-EDS spectrum of the silicon nitride ILD 8-4.
`
`Figure 5.1.6TEM-EDS Spectrum of ILD 8-4
`Figure 5.1.6 TEM-EDS Spectrum of ILD 8-4
`
`Si
`
`ILD 8-4 SiN
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`N
`
`0
`
`1
`
`400
`
`350
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`Counts
`
`Figure 5.1.6 TEM-EDS Spectrum of ILD 8-4
`
`Page 131 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-7
`
`Figure 5.1.7 is a TEM-EDS spectrum of the undoped oxide ILD 8-2. This spectrum
`is representative of ILD 8-3.
`
`Figure 5.1.7TEM-EDS Spectrum of ILD 8-2, ILD 8-3
`Figure 5.1.7 TEM-EDS Spectrum of ILD 8-2, ILD 8-3
`
`Si
`
`ILD 8-(2-3) SiO
`
`O
`
`800
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.7 TEM-EDS Spectrum of ILD 8-2, ILD 8-3
`
`Page 132 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-8
`
`Figure 5.1.8 is a TEM-EDS spectrum of the XXXX. XXXX’s XXXX 2006 papers
`suggest this is likely ultra low-k SiCOH. This spectrum is representative of ILD 5-2,
`ILD 6-2, and ILD 7-2.
`
`Figure 5.1.8TEM-EDS Spectrum of ILD 4-2 (ILD 5-2, ILD 6-2, ILD 7-2)
`Figure 5.1.8 TEM-EDS Spectrum of ILD 4-2 (ILD 5-2, ILD 6-2, ILD 7-2)
`
`Si
`
`ILD (4-7)-2 SiOC
`
`O
`
`C
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.8 TEM-EDS Spectrum of ILD 4-2 (ILD 5-2, ILD 6-2, ILD 7-2)
`
`Page 133 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-9
`
`Figure 5.1.9 is a TEM-EDS spectrum of the SiCN ILD 4-1. This spectrum is
`representative of ILD 5-1, ILD 6-1, and ILD 7-1.
`
`Figure 5.1.9TEM-EDS Spectrum of ILD 4-1 (ILD 5-1, ILD 6-1, ILD 7-1)
`Figure 5.1.9 TEM-EDS Spectrum of ILD 4-1 (ILD 5-1, ILD 6-1, ILD 7-1)
`
`Si
`
`ILD (4-7)-1 SiCN
`
`C
`
`N
`
`350
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`Counts
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.9 TEM-EDS Spectrum of ILD 4-1 (ILD 5-1, ILD 6-1, ILD 7-1)
`
`Page 134 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-10
`
`Figure 5.1.10 is a TEM-EDS spectrum of the SiOC ILD 1-2 (also likely to be
`SiCOH). This spectrum is representative of ILD 2-2 and ILD 3-2.
`
`Figure 5.1.10TEM-EDS Spectrum of ILD 1-2 (ILD 2-2, ILD 3-2)
`Figure 5.1.10 TEM-EDS Spectrum of ILD 1-2 (ILD 2-2, ILD 3-2)
`
`Si
`
`ILD (1-3)-2 SiOC
`
`O
`
`C
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.10 TEM-EDS Spectrum of ILD 1-2 (ILD 2-2, ILD 3-2)
`
`Page 135 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-11
`
`Figure 5.1.11 is a TEM-EDS spectrum of the SiCN ILD 1-1. This spectrum is
`representative of ILD 1-2 and ILD 1-3.
`
`Figure 5.1.11TEM-EDS Spectrum of ILD 1-1 (ILD 1-2, ILD 1-3)
`Figure 5.1.11 TEM-EDS Spectrum of ILD 1-1 (ILD 1-2, ILD 1-3)
`
`Si
`
`ILD (1-3)-1 SiCN
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`NC
`
`0
`
`1
`
`350
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`Counts
`
`Figure 5.1.11 TEM-EDS Spectrum of ILD 1-1 (ILD 1-2, ILD 1-3)
`
`Page 136 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-12
`
`Figure 5.1.12 is a TEM-EDS spectrum of the SiOC PMD 3.
`
`Figure 5.1.12TEM-EDS Spectrum of PMD 3
`Figure 5.1.12 TEM-EDS Spectrum of PMD 3
`
`Si
`
`PMD 3 SiOC
`
`O
`
`C
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.12 TEM-EDS Spectrum of PMD 3
`
`Page 137 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-13
`
`Figure 5.1.13 is a TEM-EDS spectrum of the undoped oxide PMD 1. This spectrum
`is representative of PMD 2.
`
`Figure 5.1.13TEM-EDS Spectrum of PMD 1/PMD 2
`Figure 5.1.13 TEM-EDS Spectrum of PMD 1/PMD 2
`
`Si
`
`PMD 1, PMD 2 SiO
`
`O
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.1.13 TEM-EDS Spectrum of PMD 1/PMD 2
`
`Page 138 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-14
`
`5.2 TEM-EDS Analysis of MIM Capacitor
`Figure 5.2.1 is a TEM-EDS spectrum of the silicon nitride MIM capacitor hard mask.
`
`Figure 5.2.1TEM-EDS Spectrum of Capacitor Hard Mask
`Figure 5.2.1 TEM-EDS Spectrum of Capacitor Hard Mask
`
`Si
`
`MIM hard mask SiN
`
`N
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.2.1 TEM-EDS Spectrum of Capacitor Hard Mask
`
`Page 139 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-15
`
`Figure 5.2.2 is a TEM-EDS spectrum of the titanium nitride capacitor plates.
`
`Figure 5.2.2TEM-EDS Spectrum of Capacitor Plates
`Figure 5.2.2 TEM-EDS Spectrum of Capacitor Plates
`
`MIM plates Ti-based
`Ti
`
`Ti
`
`2
`
`4
`Energy (keV)
`
`6
`
`8
`
`NT
`
`i
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`0
`
`0
`
`Counts
`
`Figure 5.2.2 TEM-EDS Spectrum of Capacitor Plates
`
`Page 140 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-16
`
`Figure 5.2.3 is a TEM-EDS spectrum of the aluminum oxide MIM capacitor
`dielectric. The titanium, silicon, and nitrogen peaks labeled in blue are contributed
`by the surrounding materials, while the carbon peak labeled in red is spurious.
`
`Figure 5.2.3TEM-EDS Spectrum of MIM Capacitor Dielectric
`Figure 5.2.3 TEM-EDS Spectrum of MIM Capacitor Dielectric
`
`MIM capacitor dielectric AlO
`
`Al
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`O
`N
`C
`
`Si
`
`0
`
`0
`
`1
`
`2
`
`3
`Energy (keV)
`
`4
`
`Ti
`
`Ti
`
`5
`
`6
`
`Figure 5.2.3 TEM-EDS Spectrum of MIM Capacitor Dielectric
`
`Page 141 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-17
`
`Figure 5.2.4 is a TEM-EDS spectrum of the undoped oxide pre-capacitor dielectric.
`
`Figure 5.2.4TEM-EDS Spectrum of Pre-capacitor Dielectric
`Figure 5.2.4 TEM-EDS Spectrum of Pre-capacitor Dielectric
`
`Si
`
`Pre-capacitor dielectric SiO
`
`O
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.2.4 TEM-EDS Spectrum of Pre-capacitor Dielectric
`
`Page 142 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-18
`
`5.3 TEM-EDS Analysis of BEOL Metallization and Contacts
`Figure 5.3.1 is a TEM-EDS spectrum of the nickel UBM.
`
`Figure 5.3.1TEM-EDS Spectrum of UBM
`Figure 5.3.1 TEM-EDS Spectrum of UBM
`
`Under bump metal Ni
`
`Ni
`
`Ni
`
`Ni
`
`800
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`2
`
`6
`4
`Energy (keV)
`
`8
`
`10
`
`Figure 5.3.1 TEM-EDS Spectrum of UBM
`
`Page 143 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-19
`
`Figure 5.3.2 is a TEM-EDS spectrum of the aluminum metal 11 body.
`
`Figure 5.3.2TEM-EDS Spectrum of Metal 11 Body
`Figure 5.3.2 TEM-EDS Spectrum of Metal 11 Body
`
`Al
`
`Metal 11 Al
`
`1400
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.3.2 TEM-EDS Spectrum of Metal 11 Body
`
`Page 144 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-20
`
`Figure 5.3.3 is a TEM-EDS spectrum of the tantalum-based portion of the metal 11
`barrier.
`
`Figure 5.3.3TEM-EDS Spectrum of Metal 11 Ta-based Barrier
`Figure 5.3.3 TEM-EDS Spectrum of Metal 11 Ta-based Barrier
`
`Metal 11 barrier Ta-based
`
`Ta
`
`Ta
`Ta
`
`Ta
`
`Ta
`
`4
`
`6
`Energy (keV)
`
`8
`
`10
`
`12
`
`Ta
`
`Ta
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`Counts
`
`0
`
`0
`
`2
`
`Figure 5.3.3 TEM-EDS Spectrum of Metal 11 Ta-based Barrier
`
`Page 145 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-21
`
`Figure 5.3.4 is a TEM-EDS spectrum of the titanium-based portion of the metal 11
`barrier. The aluminum and tantalum peaks labeled in blue are contributed by the
`surrounding metals.
`
`Figure 5.3.4TEM-EDS Spectrum of Metal 11 Ti-based Barrier
`Figure 5.3.4 TEM-EDS Spectrum of Metal 11 Ti-based Barrier
`
`Metal 11 barrier (top) Ti-based
`
`Ti
`
`Ti
`
`4
`Energy (keV)
`
`6
`
`8
`
`Ta
`
`Al
`
`2
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`0
`
`0
`
`Ti
`N
`
`Counts
`
`Figure 5.3.4 TEM-EDS Spectrum of Metal 11 Ti-based Barrier
`
`Page 146 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-22
`
`Figure 5.3.5 is a TEM-EDS spectrum of the copper metal 10 body. This spectrum
`is representative of the metal 1 through metal 9 wiring.
`
`Figure 5.3.5TEM-EDS Spectrum of Metal 10 Body
`Figure 5.3.5 TEM-EDS Spectrum of Metal 10 Body
`
`Metal 10 Cu
`
`Cu
`
`Cu
`
`8
`
`10
`
`Cu
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`Counts
`
`0
`
`0
`
`2
`
`6
`4
`Energy (keV)
`
`Figure 5.3.5 TEM-EDS Spectrum of Metal 10 Body
`
`Page 147 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-23
`
`Figure 5.3.6 is a TEM-EDS spectrum of the tantalum-based metal 1 liner. The
`copper and oxygen peaks labeled in blue are contributed by the surrounding
`materials. This spectrum is representative of the metal 1 through metal 9 metal
`liners.
`
`Figure 5.3.6TEM-EDS Spectrum of Metal 1 Liner
`Figure 5.3.6 TEM-EDS Spectrum of Metal 1 Liner
`
`Metal 1 liner Ta-based
`
`Ta
`
`Ta
`Cu
`Ta
`
`Ta
`
`4
`
`6
`Energy (keV)
`
`8
`
`10
`
`12
`
`Ta
`
`Cu
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`Counts
`
`200
`
`O
`
`Ta
`
`0
`
`0
`
`2
`
`Figure 5.3.6 TEM-EDS Spectrum of Metal 1 Liner
`
`Page 148 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-24
`
`Figure 5.3.7 is a TEM-EDS spectrum of the titanium-based contact liner. The
`oxygen and tungsten peaks labeled in blue are contributed by the surrounding
`materials, while the copper peak labeled in red is spurious.
`
`Figure 5.3.7TEM-EDS Spectrum of Contact Liner
`Figure 5.3.7 TEM-EDS Spectrum of Contact Liner
`
`W
`
`Contact liner Ti-based
`
`O
`O
`
`W
`W
`
`W
`
`2
`
`W
`
`Cu
`
`Ti
`
`Ti
`
`4
`
`6
`Energy (keV)
`
`8
`
`W
`WW
`
`10
`
`12
`
`Figure 5.3.7 TEM-EDS Spectrum of Contact Liner
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`0
`
`0
`
`Counts
`
`Page 149 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-25
`
`5.4 TEM-EDS Analysis of Transistors, SOI, and BOX
`Figure 5.4.1 is a TEM-EDS spectrum of the platinum-doped nickel gate silicide.
`
`Figure 5.4.1TEM-EDS Spectrum of Gate Silicide
`Figure 5.4.1 TEM-EDS Spectrum of Gate Silicide
`
`Si
`
`Ni
`
`Polycide NiPtSi
`
`Ni
`
`Pt
`
`2
`
`6
`4
`Energy (keV)
`
`Pt
`
`Pt
`
`8
`
`10
`
`Figure 5.4.1 TEM-EDS Spectrum of Gate Silicide
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`0
`
`0
`
`Counts
`
`Page 150 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-26
`
`Figure 5.4.2 is a TEM-EDS spectrum of the platinum-doped nickel silicide used for
`the transistor S/D diffusions.
`
`Figure 5.4.2TEM-EDS Spectrum of Diffusion Silicide
`Figure 5.4.2 TEM-EDS Spectrum of Diffusion Silicide
`
`Si
`
`substrate silicide NiPtSi
`
`Ni
`
`Ni
`
`Pt
`
`2
`
`Pt
`
`Pt
`
`8
`
`10
`
`6
`4
`Energy (keV)
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`0
`
`0
`
`Counts
`
`Figure 5.4.2 TEM-EDS Spectrum of Diffusion Silicide
`
`Page 151 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-27
`
`Figure 5.4.3 is a TEM-EDS spectrum of the NMOS silicon nitride stress liner.
`
`Figure 5.4.3TEM-EDS Spectrum of NMOS Stress Liner
`Figure 5.4.3 TEM-EDS Spectrum of NMOS Stress Liner
`
`Si
`
`NMOS stress liner SiN
`
`N
`
`350
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`Counts
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.4.3 TEM-EDS Spectrum of NMOS Stress Liner
`
`Page 152 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-28
`
`Figure 5.4.4 is a TEM-EDS spectrum of the silicon nitride PMOS stress liner. The
`oxygen peak labeled in blue is contributed by the overlying PMD 1.
`
`Figure 5.4.4TEM-EDS Spectrum of PMOS Stress Liner
`Figure 5.4.4 TEM-EDS Spectrum of PMOS Stress Liner
`
`Si
`
`PMOS stress liner SiN
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`N
`
`O
`
`0
`
`1
`
`350
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`Counts
`
`Figure 5.4.4 TEM-EDS Spectrum of PMOS Stress Liner
`
`Page 153 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-29
`
`Figure 5.4.5 is a TEM-EDS spectrum of the eSiGe from the PMOS transistor S/D.
`The germanium concentration is about 17 atomic percentage. The carbon and
`oxygen peaks are spurious.
`
`Figure 5.4.5TEM-EDS Spectrum of PMOS eSiGe
`Figure 5.4.5 TEM-EDS Spectrum of PMOS eSiGe
`
`Si
`
`PMOS SiGe
`Ge 17 ATOMIC %
`
`C Ge
`
`O
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`Ge
`
`Ge
`
`10
`
`12
`
`0
`
`0
`
`2
`
`4
`
`6
`Energy (keV)
`
`8
`
`Figure 5.4.5 TEM-EDS Spectrum of PMOS eSiGe
`
`Page 154 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-30
`
`Figure 5.4.6 is a TEM-EDS spectrum of the silicon from the transistor channel
`region.
`
`Figure 5.4.6TEM-EDS Spectrum of SOI (Channel Region)
`Figure 5.4.6 TEM-EDS Spectrum of SOI (Channel Region)
`
`Si
`
`Channel region Si
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.4.6 TEM-EDS Spectrum of SOI (Channel Region)
`
`Page 155 of 161
`
`

`

`Structural Analysis – Sample Report
`Materials Analysis
`
`5-31
`
`Figure 5.4.7 is a TEM-EDS spectrum of the undoped oxide used for the BOX.
`
`Figure 5.4.7TEM-EDS Spectrum of BOX
`Figure 5.4.7 TEM-EDS Spectrum of BOX
`
`Si
`
`buried oxide SiO
`
`O
`
`700
`
`600
`
`500
`
`400
`
`300
`
`200
`
`100
`
`Counts
`
`0
`
`0
`
`1
`
`3
`2
`Energy (keV)
`
`4
`
`5
`
`Figure 5.4.7 TEM-EDS Spectrum of BOX
`
`Page 156 of 161
`
`

`

`Structural Analysis – Sample Report
`Critical Dimensions
`
`6 Critical Dimensions
`6.1 Horizontal Dimensions
`
`6-1
`
`Table 6.1.1
`
`Minimum Pitch Metals
`
`Layer
`
`Metal 11
`Metal 10
`Metal 9
`Metal 8
`Metal 7
`Metal 6
`Metal 5
`Metal 4
`Metal 3
`Metal 2
`Metal 1
`Metal 0
`
`Minimum Width
`(µm)
`–
`0.98
`1.00
`0.33
`0.34
`0.34
`0.34
`0.20
`0.20
`0.20
`0.17
`0.12
`
`6.1.1 Minimum Pitch Metals
`
`Minimum Space
`(µm)
`–
`0.92
`0.90
`0.31
`0.30
`0.30
`0.31
`0.12
`0.12
`0.11
`0.10
`0.13
`
`Table 6.1.1 Minimum Pitch Metals
`
`Minimum Pitch
`(µm)
`–
`1.90
`1.90
`0.64
`0.64
`0.64
`0.65
`0.32
`0.32
`0.31
`0.27
`0.24
`
`Page 157 of 161
`
`

`

`Structural Analysis – Sample Report
`Critical Dimensions
`
`6-2
`
`Table 6.1.2
`
`Contacts and Vias
`
`Layer
`
`Via 10
`Via 9
`Via 8
`Via 7
`Via 6
`Via 5
`Via 4
`Via 3
`Via 2
`Via 1
`Via 0
`Contacts to polycide
`Contacts to diffusion
`
`Minimum
`Diameter (µm)
`27
`0.80
`0.29
`0.31
`0.30
`0.31
`0.15
`0.17
`0.12
`0.15
`0.14
`0.12
`0.10
`
`6.1.2 Contacts and Vias
`
`Minimum
`Space (µm)
`–
`0.90
`0.58
`0.25
`0.27
`0.26
`0.27
`0.25
`0.26
`0.15
`0.11
`0.19
`0.21
`
`Table 6.1.2 Contacts and Vias
`
`Minimum
`Pitch (µm)
`–
`1.70
`0.87
`0.56
`0.57
`0.57
`0.42
`0.42
`0.38
`0.30
`0.25
`0.31
`0.31
`
`6.1.3 Transistors, Poly, and Isolation
`
`Table 6.1.3
`
`Transistors, Poly, and Isolation
`
`Layer
`Die size (edge seal)
`Die area (inside die seal/whole die)
`SRAM cell size
`Bond pad
`NMOS gate length
`PMOS gate length
`Minimum pitch polycide
`NMOS sidewall spacer thickness
`PMOS sidewall spacer thickness
`Minimum contact to gate spacing
`
`Size (µm)
`6.84 mm by 9.12 mm
`62.4 mm2/66.2 mm2
`0.86 µm x 1.29 µm
`75 x 75
`45 nm
`60 nm
`250 nm
`27 nm
`65 nm
`~80 nm
`
`Table 6.1.3 Transistors, Poly, and Isolation
`
`Page 158 of 161
`
`

`

`Structural Analysis – Sample Report
`Critical Dimensions
`
`6.2 Vertical Dimensions
`
`Table 6.2.1
`
`Vertical Dimensions
`
`6-3
`
`Layer
`Passivation
`Metal 11
`Metal 10
`Metal 9
`Metal 8
`Metal 7
`Metal 6
`Metal 5
`Metal 4
`Metal 3
`Metal 2
`Metal 1
`Metal 0
`ILD 10
`ILD 9
`ILD 8
`ILD 7
`ILD 6
`ILD 5
`ILD 4
`ILD 3
`ILD 2
`ILD 1
`ILD 0
`Poly 1
`Gate Oxide thickness
`Silicon body thickness
`NMOS S/D silicide depth
`PMOS S/D silicide depth
`Buried Oxide layer
`Die thickness
`
`6.2.1 Vertical Dimensions
`
`Layer Thicknesses (µm)
`Composition
`0.78 (0.22/0.45/0.11)
`SiN/Oxide/SiN
`1.5 (1.4/~0.04/~0.01/~0.06)
`Al/TiN/Ti/Ta based
`1.3 (~1.2/~0.08)
`Cu/ Ta liner
`1.3 (~1.2/~0.07)
`Cu/ Ta liner
`0.60 (0.55/~0.05)
`Cu/ Ta liner
`0.60 (0.55/~0.05)
`Cu/ Ta liner
`0.59 (0.55/~0.04)
`Cu/ Ta liner
`0.35 (0.32/~0.02)
`Cu/Ta liner
`0.31 (0.29/~0.02)
`Cu/ Ta liner
`0.31 (0.29/~0.02)
`Cu/ Ta liner
`0.31 (0.29/~0.02)
`Cu/ Ta liner
`0.29 (0.27/~0.02)
`Cu/ Ta liner
`0.37 (0.37/~0.02)
`W/TiN
`FSG/Oxide/Oxynitride/SiN 2.83 (1.42/1.30/0.09/0.015)
`FSG/Oxide/Oxynitride/SiN 2.33 (1.51/0.73/0.08/0.013)
`FSG/Oxide/Oxynitride/SiN 0.97 (0.64/0.28/0.035/0.011)
`FSG/Oxide/Oxynitride/SiN 0.99 (0.67/0.27/0.035/0.012)
`FSG/Oxide/Oxynitride/SiN 0.94 (0.62/0.27/0.034/0.011)
`FSG/Oxide/SiOCN
`0.54 (0.36/0.15/0.03)
`FSG/Oxide/ SiOCN
`0.51 (0.33/0.15/0.03)
`FSG/Oxide/ SiOCN
`0.49 (0.31/0.15/0.03)
`FSG/Oxide/ SiOCN
`0.55 (0.36/0.16/0.03)
`FSG/Oxide/SiN
`0.46 (0.16/0.27/0.025)
`Oxide/SiN
`0.40 (0.36/0.04)
`Cobalt silicide (CoSi2/Poly)
`140 (45/95)
`Oxide
`~1.5 nm
`Silicon
`45 nm
`Cobalt silicided
`~13-18 nm
`Cobalt silicided
`~15 nm
`Oxide
`145 nm
`–
`760
`
`Table 6.2.1 Vertical Dimensions
`
`Page 159 of 161
`
`

`

`Structural Analysis – Sample Report
`Statement of Measurement Uncertainty and Scope Variation
`
`7-1
`
`7 Statement of Measurement Uncertainty and Scope Variation
`Statement of Measurement Uncertainty
`Chipworks calibrates length measurements on its scanning electron microscopes
`(SEM), transmission electron microscope (TEM), and optical microscopes, using
`measurement standards that are traceable to the International System of Units (SI).
`
`Our SEM/TEM cross-calibration standard was calibrated at the National Physical
`Laboratory (NPL) in the UK (Report Reference LR0304/E06050342/SEM4/190).
`This standard has a 146 ± 2 nm (± 1.4%) pitch, as certified by NPL. Chipworks
`regularly verifies that its SEM and TEM are calibrated to within ± 2% of this
`standard, over the full magnification ranges used. Fluctuations in the tool
`performance, coupled with variability in sample preparation, and random errors
`introduced during analyses of the micrographs, yield an expanded uncertainty of
`about ± 5%.
`
`The materials analysis reported in Chipworks reports is normally limited to
`approximate elemental composition, rather than stoichiometry, since calibration of
`our SEM and TEM based methods is not feasible. Chipworks will typically
`abbreviate, using only the elemental symbols, rather than full chemical formulae,
`usually starting with silicon or the metallic element, then in approximate order of
`decreasing atomic % (when known). Elemental labels on energy dispersive X-ray
`spectra (EDS) will be colored red for spurious peaks (elements not originally in
`sample). Elemental labels in blue correspond to interference from adjacent layers.
`Secondary ion mass spectrometry (SIMS) data may be calibrated for certain
`dopant elements, provided suitable standards were available.
`
`A stage micrometer, calibrated at the National Research Council of Canada
`(CNRC) (Report Reference LS-2005-0010), is used to calibrate Chipworks’ optical
`microscopes. This standard has an expanded uncertainty of 0.3 µm for the stage
`micrometer’s 100 µm pitch lines. Random errors, during analyses of optical
`micrographs, yield an expanded uncertainty of approximately ± 5% to the
`measurements.
`Statement of Scope Variation
`Due to the nature of reverse engineering, there is a possibility of minor content
`variation in Chipworks’ standard reports. Chipworks has a defined table of
`contents for each standard report type. At a minimum, the defined content will be
`included in the report. However, depending on the nature of the analysis,
`additional information may be provided in a report, as value-added material for
`our customers.
`
`Page 160 of 161
`
`

`

`
`Structural Analysis – Sample Report
`About Chipworks
`
`About Chipworks
`Chipworks is the recognized leader in reverse engineering and patent infringement
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`
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`K2H 5B7 Canada
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`
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