Nov. 5, 1974
`3,846,198
`CHENG PAUL WEN‘ ETAL
`METHOD OF MAKING SEMICONDUCTOR DEVICES HAVING THIN
`’
`ACTIVE REGIONS‘ OF THE SEMICONDUCTOR MATERIAL
`Filed May 2. 1973
`
`DEPOSITE BARRIER LAYER
`ON SUBSTRATE
`
`DEPOSITE SILICON REGION
`ON BARRIER LAYER
`
`APPLY SUPPORT BODY
`ON SILICON REGION
`
`REMOVE SUBSTRATE
`BY CHEMICAL ETCHING
`
`Fig. 1.
`
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`Fig. 3 T
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`001
`
`Petitioner Samsung - SAM1004
`
`

`
`rice
`United States Patent O
`
`1
`
`3,846,198
`Patented Nov. 5, 1974
`
`1
`
`3,846,198
`METHOD OF MAKING SEMICONDUCTOR DE
`VICES HAVING THIN ACTIVE REGIONS OF
`THE SEMICONDUCTOR MATERIAL
`Cheng Paul Wen and Yuen-Sheng Chiang, Trenton, N.J.,
`assignors to RCA Corporation, New York, N.Y.
`Continuation-impart of abandoned application Ser. No.
`293,804, Oct. 2, 1972. This application May 2, 1973,
`Ser. No. 356,322
`Int. Cl. H011 7/50
`
`US Cl. 156-—17
`
`_
`9 Claims
`
`ABSTRACT OF THE DISCLOSURE
`Semiconductor devices of the type having a thin active
`region of the semiconductor material on a support body
`are made by depositing the active region on a silicon
`substrate with a thin barrier layer of highly doped P
`type silicon being provided between the active region
`and the substrate. The support body is applied to the
`active region and the substrate is removed by etching
`in a solution of potassium hydroxide and l-propanol.
`The etching solution removes the substrate but stops
`at the barrier layer leaving a smooth, ?at surface. The
`barrier layer can be either used as part of the semi
`conductor device being made or easily removed with a
`suitable etchant.
`
`10
`
`15
`
`BACKGROUND OF THE INVENTION
`
`30
`
`This is a continuation-in-part of our patent application
`Ser. No. 293,804, ?led Oct. 2, 1972, now abandoned,
`entitled “Method of Making Semiconductor Devices
`Having Thin Active Regions of the Semiconductor Ma
`terial.”
`The present invention relates to a method of making
`semiconductor devices having thin active regions of the
`semiconductor material. More particularly, the present
`invention relates to a method of selectively etching away
`a semiconductor substrate to leave a thin region of semi
`conductor material on a support.
`High frequency semiconductor devices and integrated
`circuits require high quality, ultra-thin, uniformly thick
`bodies of a semiconductor material on a metallic or elec
`trically insulating support. A problem in making such
`devices is to achieve the ultra-thin, less than about 10
`microns, bodies of the semiconductor material. To
`handle a large wafer of the semiconductor material
`which is this thin is very di?icult since such a thin wafer
`is very brittle and subject to be easily broken. To over
`come this problem, it has been the practice to use a rela
`tively thick water, in the order of .075 mm. in thickness,
`which can be more easily handled. The thick wafer is
`mounted on a support and is then thinned down to the
`desired thickness either by mechanical or chemical pol
`ishing techniques.
`Thinning the wafer by mechanical polishing has the
`disadvantage that as the wafer becomes thinner it be
`comes more subject to being broken under the applica
`tion of the mechanical polishing process. Also, the me
`chanical polishing processes have a tendency to create
`defects in the surface of the wafer which can adversely
`atiect the electrical characteristics of the device being
`formed. Thinning the wafer by heretofore known chem
`ical polishing processes has the disadvantage that such
`chemical polishing processes have a tendency to provide
`the wafer with a curved surface rather than a ?at surface,
`particularly when the water must be thinned a large
`amount. Thus, the thinned wafer would be of non-uni
`form thickness so that the individual devices made from
`the wafer would be of non-uniform thickness.
`
`45
`
`60
`
`65
`
`2
`Another process which has been developed to achieve
`a thin body of a semiconductor material on a support
`is an electrolytic etching process. For this process a
`barrier layer of a high resistance semiconductor mate
`rial is applied to the surface of a substrate of a low
`resistance semiconductor material, the thin body of the
`semiconductor material is applied to the barrier layer
`and the support is applied to the body. The substrate is
`then removed by electrolytically etching away the sub
`strate. The etching of the substrate will stop when the
`barrier layer is reached so as to leave the thin body on
`the support. However, this process also has certain dis
`advantages. To achieve the electrolytic etching, the de~
`vice must be connected in a suitable electric circuit. To
`so etch a plurality of the devices at one time for mass
`production requires a separate circuit for each device
`so that the apparatus becomes cumbersome. Also, to
`ensure that all of the substrate is etched away, it is
`necessary to either properly position the device at an
`angle in the electrolytic etching solution and/or repeat
`edly dip the device deeper and deeper in the solution.
`Thus, special handling of the device is required during
`the etching operation which makes mass production
`more dif?cult.
`SUMMARY OF THE INVENTION
`A semiconductor device is made by forming on a sur
`face of a substrate of single crystalline silicon a thin
`barrier layer of single crystalline, P type conductivity
`silicon with the free carrier concentration being greater
`than 5x1019 cm._3. On the silicon layer is formed a
`region of single crystalline silicon which is of a conduc
`tivity type or types required by the semiconductor device
`being formed, and the substrate is removed by etching
`with a solution of potassium hydroxide and l-propanol.
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`FIG. 1 is a ?ow chart of the method of the present
`invention.
`FIG. 2 is a sectional view showing one form of a semi
`conductor device being made by the method of the pres
`ent invention.
`FIG. 3 is a sectional view showing another form of a
`semiconductor device being made by the method of the
`present invention.
`FIG. 4 is a schematic vie-w of an apparatus used to
`carry out one operation of the method of the present
`invention.
`
`DETAILED DESCRIPTION
`
`Referring initially to FIG. 2, there is shown one form
`of a semiconductor device generally designated as 10,
`being made by the method of the present invention. The
`device shown comprises a ?at substrate 12 of single
`crystalline silicon of either P type or N type conductiv
`ity. The substrate 12 can be relatively thick, in the order
`of 75 microns, so as to be rigid. If the substrate 12 is of
`boron doped P type, it should have a carrier concentra
`tion of no greater than 5><1019 Cm._3. If the substrate
`12 is of N type it can contain any desired dopant con
`centration. The substrate 12 also has its surfaces oriented
`on a <100> crystellographic plane. On a surface of the
`substrate 12 is a barrier layer 14 of P type conductivity
`single crystalline silicon. The barrier layer 14 is doped
`with boron and has a carrier concentration of greater
`than 5X1019 cm.‘3 and preferably at least 1X 1020
`cm.—3. Also, the barrier layer 14 is preferably very thin,
`in the order of ?ve microns.
`On the barrier layer 14 is a region 16 of a single crys
`talline silicon which forms the active portion of the semi—
`conductor devices being made. Therefore, the region 16
`is of a conductivity type or types and is of a thickness
`
`002
`
`

`
`Conductivity type
`
`Doping concentration
`(cmra)
`
`Etch rate
`(miorons/
`min.)
`
`P+ (boron) _________________ _- Approximately 1X10"-.-
`P- (boron) _________________ __ 1X10"-1><1017 _________ __
`N- (phosphorus) __________ __ Approximately 1024 ____ -.
`N+ (antimony) ____________ __ 2-5X10" _______________ __
`
`0.0106
`1. 1
`1.27
`1.31
`
`Thus, it can be seen that the etch rate for the highly
`doped boron (P+) silicon is over 100 times slower than
`for either the lower doped boron (P—) or the N type sili
`con. Also, it has been found that the potassium hydroxide
`l-propanol etching solution has the advantages over other
`potassium hydroxide alcohol etching solutions of a faster
`etch rate for the lower doped boron silicon and the N type
`silicon and a slower etch rate for the highly doped boron
`silicon so as to have a greater etch rate differential. For
`example, using an etching solution of 300 milliliters of
`water, 90 grams of potassium hydroxide and 200 milliliters
`of iso-propyl alcohol results in the following etch rates:
`
`Conductivity type
`
`Doping concentration
`(cmra)
`
`P-I- (boron) _________________ -_ Approximately 1X10"...
`
`P- (boron) _ _ _ . _ _ _ _ _
`_ _ . __ DOOM-1X10" _________ __
`N+ (antimony) ____________ .- 2—5><1O1g ............... ._
`
`Etch rate
`(microns/
`ruin.)
`
`0.017
`
`0.44
`0.58
`
`3,846,198
`3
`4
`required for the particular semiconductor devices being
`milliliters of water, 90 grams of potassium hydroxide and
`made. For example, to form diodes, the region 16 would
`200 milliliters of l-propanol results in the following etch
`be superimposed contiguous layers of opposite conduc
`rates:
`tivity type having a PN junction therebetween. To form a
`type of a transferred electron e?’ect device, the region 16
`may be a layer of P type conductivity sandwiched between
`two layers of N+ type conductivity. To form integrated
`circuits, the region 16 may be of either conductivity type
`into which will be formed active regions of the various
`components of the circuit to be formed. To make high
`frequency semiconductor devices, the region 16 is pref
`erably relatively thin, in the order of about 10 microns.
`On the region 16 is a support body 18 of an electrical
`insulating or semi-insulating material, such as glass, quartz
`or a high resistance semiconductor material.
`As indicated in the flow chart of FIG. 1, the device 10
`shown in FIG. 2 can be formed by ?rst depositing on the
`surface of the substrate 12 an epitaxial layer of the highly
`boron doped silicon to form the barrier layer 14. The bar
`rier layer 14 may be deposited by any well known epitaxial
`deposition technique. For example, the substrate 12 can
`be placed in a chamber through which is provided a flow
`of a gas containing silicon and boron, such as a mixture
`of silane and diborane. The chamber is heated to a tem
`perature, approximately 1000“ C., at which the gas reacts
`to form silicon and boron which deposit on the substrate
`as the barrier layer 14. The silicon region 16 can then be
`epitaxially deposited. on the barrier layer 14 in a manner
`similar to that for depositing the barrier layer. However,
`the number and composition of the epitaxial layers which
`form the region 16 depend on the semiconductor device
`being formed. To form a diode, two layers of opposite
`conductivity type may be deposited in sequence, or a sin—
`gle layer of one conductivity type may be epitaxially de
`posited on the barrier layer 12 and a conductivity modi?er
`of the opposite conductivity type diffused into the single
`layer. To form a device in which only the concentration
`of the conductivity modi?er varies, a single layer of the
`desired conductivity may be deposited with the ratio of the
`conductivity modi?er containing gas in the deposition gas
`being varied during the deposition process. The support
`body 18 is then applied to the silicon region 16. If the
`support body 18 is glass or quartz it can be fusion bonded
`directly to the silicon region. A semi-insulating semicon
`ductor material support body can be epitaxially deposited
`on the bottom region 16 in the manner described above.
`The substrate 12 is then completely removed. This is
`achieved by chemically etching the substrate 12 in a
`heated, concentrated solution of potassium hydroxide cov
`ered with a layer of l-propanol. FIG. 4 shows an ap
`paratus which can be used to carry out the etching away
`of the substrate 12. The apparatus comprises a container
`20 seated on a stirrer hot plate 22. The concentrated po
`tassium hydroxide 24 is within the container 20 and is
`covered by a layer 26 of the l-propanol. A magnetic stir
`rer 28 is within the potassium hydroxide solution, and a
`water jacket 30 ?ts over the top of the container 20. The
`devices 10 are placed in the potassium hydroxide solution
`24 which is stirred by the stirrer 26 and heated to a tem
`perature of about 85° C. A plurality of the devices 10 can
`be supported in the potassium hydroxide solution in a
`suitable holder, not shown. Each of the devices 10 may
`be coated with a suitable resist material around its periph
`ery and over the surface of the support body 18 so that
`only the surface of the substrate 12 is exposed to the po
`tassium hydroxide.
`In the etching of the substrate 12, it is known that the
`heated potassium hydroxide l-propanol solution etches
`<100> oriented silicon at a relatively fast rate, approxi
`mately 1 micron per minute. However, we have discov- "
`ered that when the concentration of the P type conduc
`tivity modi?er, boron, in the silicon is made greater than
`5X1019 cm.-3 and preferably greater than 1x1020 cm.—3
`the etching rate slows down radically, by a factor greater
`than 100. For example, using an etching solution of 300
`
`By comparing the above two tables it can be seen that
`the potassium hydroxide l-propanol etch solution etches
`the lower boron doped silicon and the N type silicon
`about twice as fast as the potassium hydroxide iso-propyl
`alcohol etching solution but etches the highly boron doped
`silicon only about one-half as fast.
`Thus, by having the barrier layer 14 between the sub
`strate 12 and the active region 16, the substrate 12 will
`be etched away relatively fast but the etching will sub
`stantially stop when all of the substrate 12 is removed and
`the barrier layer 14 is reached. Also, when the substrate
`12 is completely removed, the barrier layer 14 is left with
`a smooth, ?at surface. In addition, while the substrate 12
`is being etched away gas bubbles are formed in the po
`tassium hydroxide solution and these bubbles stop when
`the substrate 12 is completely removed. Thus, there is
`provided a visible indication as to when the substrate 12
`is completely removed and the devices 10 can be removed
`from the etchant. In this etching system the l-propanol
`layer 26 serves the dual purpose of keeping the tempera~
`ture of and the l-propanol concentration in the potassium
`hydroxide solution 24 constant.
`After the substrate 12 is removed, the device 10 com
`prises the support body 18 having the active silicon region
`16 on a surface thereof and the barrier layer 14 over
`the active region 16. Since the barrier layer 14 contains a
`high concentration of the conductivity modi?er and is
`therefore of very low resistance, it can be used as a low
`resistance contact for the active region 16 if the semicon
`ductor devices being made so permits. For example, if
`diodes were being made and the active region 16 had the P
`type layer adjacent the barrier layer 14, the barrier layer
`could serve as a low resistance contact to the P type layer.
`However, if the barrier layer 14 is not desired, it can be
`easily removed by etching in a nitric and hydro?uoric acid
`mixture. Since the barrier layer 14 is very thin it can be
`etched away quickly leaving the active region 16 with a
`?at, smooth surface. The device 10 can then be processed
`to complete the semiconductor device being made. For
`example, metal contacts can be applied, to form an inte
`grated circuit the active region 16 may be provided with
`areas of different conductivity types by diffusion or ion
`implantation to form the desired circuit, and the device
`may be diced into individual semiconductor devices.
`Referring to FIG. 3, another form of a semiconductor
`device being made by the method of the present inven
`
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`003
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`

`
`3,846,198
`
`6
`
`We claim:
`1. A method of making a semiconductor device com
`prising the steps of:
`(a) forming on a surface of a substrate of single crystal
`line silicon a thin barrier layer of single crystalline
`P type conductivity silicon with the free carrier con
`centration being greater than 5 ><1019 cur-3,
`(b) forming on said barrier layer a region of single
`crystalline silicon, said region being of a conductivity
`type or types required by the semiconductor device
`‘being formed, and
`(c) removing said substrate by etching with a solution
`of potassium hydroxide and l-propanol.
`2. The method in accordance with claim 1 in which
`the substrate is either P type conductivity with a free
`carrier concentration of not greater than 5><l019 cm.‘3
`or N type conductivity.
`3. The method in accordance with claim 2 including
`providing a support body on the region prior to removing
`the substrate.
`4. The method in accordance with claim 3 in which the
`support body is of an electrical insulating material and is
`bonded to the surface of the region.
`5. The method in accordance with claim 3 in which
`the support body is of an electrically conductive metal.
`6. The method in accordance with claim 5 in which a
`metal ?lm is coated on the surface of the region and the
`‘ support body is provided on the metal ?lm.
`7. The method in accordance with claim 6 in which
`the metal body is bonded to the metal ?lm.
`8. The method in accordance with claim 6 in which
`the metal body is plated onto the metal ?lm.
`9. The method in accordance with claim 1 in which after
`the substrate is etched away the barrier layer is removed.
`
`tion is generally designated as 100. The semiconductor
`device 100, like the semiconductor device 10 shown in
`FIG. 2, comprises a substrate 112 of single crystalline
`silicon, a thin barrier layer 114 of a highly doped P type
`conductivity single crystalline silicon on a surface of the
`substrate 112, an active region 116 of single crystalline
`silicon on the barrier layer 114, and a support body 118 on
`the active region 116. However, the support body 118 is
`of an electrically conductive metal, such as copper, which
`is bonded to a thin metal ?lm 120 coated on the surface
`of the active region 116. The metal support body 118 can
`serve as a heat sink and/ or as an electrode for the semi
`conductor devices being made. The device 100 is made in
`the same manner as previously described with regard to
`the device 10 shown in FIG. 2. However, after the active
`region 116 is deposited on the barrier layer 114, the metal
`?lm 120 is coated on the surface of the active region 116
`by any well known technique, such as by vacuum evapora
`tion. The metal support body 118 is then applied to the
`metal ?lm 120'. This can be achieved either ‘by bonding a
`metal body to the metal ?lm, such as by thermocompres
`sion bonding or by soldering, or the metal body can be
`electroplated onto the metal ?lm. The substrate 112 is
`then removed by the chemical etching process previously
`described.
`Thus, there is provided by the present invention a
`method of making a semiconductor device which has a
`thin active region of single crystalline silicon on a sup
`port body. vBy forming the active region of the device as
`an epitaxial layer on a substrate, thin active regions of
`uniform thickness and good quality semiconductor mate
`rial can be obtained Without danger of breaking the thin
`region. By providing the thin highly doped P type barrier
`layer between the active region and the substrate, the
`substrate can ‘be easily removed by a chemical etching
`procedure which completely removes the substrate with
`out adversely affecting the active region and leaves a
`smooth ?at surface. Also, the etching procedure is suit
`able for mass production since it can be carried out on
`a plurality of the devices simultaneously and provides a
`visual indication of when the etching of the substrate is
`completed. In addition, since the barrier layer is of low
`resistance it can be utilized as a contact for certain types
`of semiconductor devices which can ‘be formed by the
`method of the present invention. However, where the
`barrier layer cannot be so used, it can be easily and
`quickly removed.
`
`10
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`20
`
`25
`
`References Cited
`UNITED STATES PATENTS
`3/1973 Hays ___________ __ 156_-17 X
`4/1973 Bean et a1 __________ __ 156—17
`9/1972 Tolar _________ .. 156-17 UX
`
`40
`
`3,721,588
`3,725,160
`3,689,993
`
`WILLIAM A. POWELL, Primary Examiner
`U.S. Cl. X.R.
`
`156-7; 252—79.5
`
`004