`
`SONNENSC HEIN
`
`I hereby certl1'y that this correspondence is being $erit via
`facsimile 571-273·1724 to Examiner Chris C. Chu at the
`United States Patent and Tre.demari\ Office on
`M~rd.r ~~ aoo4
`Date of F&C$ imile
`
`RECElVED
`CENTRAL FAX CEM1ft
`MAR 3 1 2004
`
`OFFICIAl
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`Our File No. 09799940·0011
`
`In re Application of:
`
`James E. Nulty, et al.
`
`Serial No. 09/540,610
`
`Filing Date: March 31, 2000
`
`For Method for Eliminating Lateral
`Spacer Erosion on Enclosed
`Contact Topographies During RF
`Sputter Cleaning
`
`Examiner Chris C. Chu
`
`Group Art Unit No. 2815
`
`CORRECTED AMENDMENT
`
`Mail Stop - AF
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Dear Sir:
`
`This Amendment is identical to the last amendment filed but It corrects the format
`of the presented claim set. Applicants thank Examiner Chu for pointing out this
`
`omission.
`
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`Case No. IPR2016-00782
`DSS.2004.001
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`
`
`MA R. 31. 2004 12: 36PM
`
`SetHI ENSCHE IN
`
`NO. 3527-P. 3- --
`
`IN THE. SPECIFICATION
`Please add the following paragraph to the specification, page 15, after line 16:
`
`The phrase "substantially rectangular'' means that a side of the spacer has an
`angle relative to the substrate surface of more than es·.
`
`2
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`Case No. IPR2016-00782
`DSS.2004.002
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`
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`MAR. 31. 2004 12: 36PM
`
`SONN ENSCH El N
`
`NO. 3527
`
`P 4
`
`IN THE CLAIMS
`
`1-24, {Cancelled}
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`25.
`sa1d etch stop material comprises silicon nitride.
`
`26.
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`
`said etch stop material comprises silicon dioxide.
`
`27.
`
`(Currently Amended) A structure, comprising:
`
`(a) a conductive layer disposed over a substrate;
`{b) a first insulating layer on the conductive layer;
`(c) a contact region in said first insulating layer;
`(d) at least one insulating spacer in the contact region adjacent to the first
`insulating layer; and
`(e) an etch stop material over said first insulating layer and adjacent to the
`insulating spacer, the etch stop material being a different material from the insulating
`spacer,
`
`wherein a side of the Insulating spacer has an angle relative to the
`substrate surface of more than 85° a s~:~bstaRtiall~· ~ssteR§l:lla~ ptsfile iR tl:!e seR1ee1
`
`~-
`
`28.
`
`(Cancelled).
`
`(Previously presented) The structure of Claim 27, wherein the insulating
`29.
`spacer has a surface portion in the contact region without overlying etch stop material.
`
`(Previously presented) The structure of Claim 29, wherein the insulating
`30.
`spacer surface portion without overlying etch stop material comprises an insulating
`spacer surface portion most distant from said substrate.
`
`31.
`
`(Cancelled).
`
`3
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`Case No. IPR2016-00782
`DSS.2004.003
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`
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`MAR. 31. 2004 12:37PM
`
`SONNENSCHEIN
`
`j
`
`NO. 3527
`
`P. 5
`
`(Previously presented) The structure of Claim 27, further comprising a
`32.
`second insulating layer on the etch stop layer and over the conductive layer.
`
`33.
`
`(Previously presented) The structure of Claim 32, furtner comprising a
`
`second conductive material in the contact region.
`
`34.
`
`(Currently amended) A structure, comprising:
`(a) a first electrically conductive material formed in and/or on a surface of
`
`a substrate;
`
`(b) a contact opening in a region adjacent to a second electrically
`
`conductive material formed on the substrate;
`{c) an electrically lnsulatlve spacer in the contact opening adjacent to the
`
`second electrically conductive material;
`
`(d) an etch stop material over the electrically lnsulatlve spacer and the first
`and second electrically conductive materials, the etch stop material being a different
`
`material from the insulative spacer;
`
`(e) a blanket layer over the etch stop material; and
`(f) an opening through a first part of the etch stop material to the first
`electrically conductive material,
`
`wherein a side of the electrically lnsulatlve spacer has a s1o1 estantially reGtan§bllar
`
`cr=ess sestienal sl'4ape in a plaRe tl=lat is s~;~estantlally J3BFpenEllcYiar an angle relative to
`the substrate surface of more than 85°.
`
`35.
`
`(Cancelled).
`
`36.
`
`(Previously presented) The structure of Claim 34, wherein the electrically
`
`insulative spacer has a surface portion without overlying etch stop material.
`
`37.
`
`(Previously presented) The structure of Claim 36 , wherein the electrically
`
`fnsulatfve spacer surface portion without overtying etch stop material comprises a
`
`surface portion most distant from the substrate.
`
`4
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`Case No. IPR2016-00782
`DSS.2004.004
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`
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`MAR. 31.2004 12:37 PM
`
`SONNENSCHEIN
`
`NO. 3527
`
`P. 6
`
`(Previously presented) The structure of Claim 34, further comprising a
`38.
`second insulating layer on the etch stop layer and over the conductive layer.
`
`(Previously presented) The structure of Claim 38, further comprising a
`39.
`second conductive material in the contact region.
`
`5
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`Case No. IPR2016-00782
`DSS.2004.005
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`MAR. 31. 2004 12:37 f'M
`
`SO I~ NENSCHE I N
`
`NO. 3527
`
`P (
`
`REMARKS
`The amendment to claims 27 and 34, and the specification, are supported by the
`
`specification, page 8, lines 19-23, and page 10, lines 8-11 . No new matter has been
`added.
`Applicants would like to thank Examiner Chu for the courteous and helpful
`
`discussion held with applicants representative on Febn.Jary 19, 2004. During that
`
`discussion, it was indicated that the above amendments would clarify the claims.
`
`Applicants submit that the application is now in condition for allowance. Early
`
`notice of such action Is earnestly solicited.
`
`Respectfully submitted,
`
`fu~ / R4!( Nv.
`
`Paul E. Rau~.D.
`Registration No. 38,591
`Attorney for Applicants
`SONNENSCHEIN NATH & ROSENTHAL
`P. 0 . BOX061080
`WACKER DRIVE STATION, SEARS TOWER
`CHICAGO, IL 60606
`(312) 876-8000
`
`6
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`Case No. IPR2016-00782
`DSS.2004.006