RESUME
`Richard B. Fair
`3414 CAMBRIDGE RD.
`DURHAM, NORTH CAROLINA 27707
`
`
`
`EDUCATION AND HONORS
`
`
`BSEE - Duke University, Durham, N.C., 1964, Presbyterian Church Scholarship, 1961.
`MSEE - Penn State University, University Park, Pa., 1966, Sylvania Fellow, 9-64/6-66.
`Ph.D. - Duke University, Durham, N.C., 1969, NDEA Fellow, 9-66/6-69.
`
`Awards
`
`(1) Outstanding Paper Award - IEEE Spring Symp., Duke University, 1969.
`(2) "Outstanding Young Men of America" Award, 1973.
`(3) "Outstanding Young Electrical Engineer of the Year" Award, 1974 -National Award from
`Eta Kappa Nu.
`(4) American Men and Women in Science, 1979 - Present
`(5) Who's Who in Technology Today, 1980, 81.
`(6) Adjunct Professor, Dept. of Electrical Eng., Duke University, 1980-81.
`(7) Who's Who in Frontiers of Science and Technology, 1985, 1986
`(8) Who's Who in the Semiconductor Industry, 1986.
`(9) Fellow Award, IEEE, 1990
`(10) Who's Who in Engineering, 1991, 1993
`[11] Who's Who in America, 1991, 1993
`(12) Fellow Award, Electrochemical Society, 1994
`(13) Professor James F. Gibbons Achievement Award, 4th International
`Conference on Advanced Thermal Processing, 1996
`(14) Third Millennium Medal, IEEE, 2000
`(15) Solid State Science and Technology Award – The Electrochemical Society, 2003
`
`
`
`MEMBERSHIPS / PROFESSIONAL ACTIVITIES
`
`
`(1) Member, Sigma Xi
`(2) Fellow, Electrochemical Society
`a. Session Chairman numerous times, 1975-present
`b. Symposium Chairman - "Diffusion Processes in Semiconducting Materials," St. Louis,
`1980
`c. Member of Electronics Division Executive Committee, 1987 -
`d. Organizing Committee - 6th International Symposium on ULSI Science and
`Technology
`e. Organizing Committee - 1st Inter. Conf. On ULSI Process Integration - 1999.
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`SAMSUNG-1015.001
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`f. Organizing Committee - Joint Electronics/Dielectric General Session - 1997-
`g. Co-chair, Sixth International Symposium on ULSI Science and Technology, Montreal
`(1997)
`
`
`
`(3) Life Fellow- IEEE
`a. Session Chairman at 1977-78 International Electron Device Meetings (IEDM)
`b. Chairman, Solid State Device Committee for 1978 IEDM
`c. Member, Integrated Circuit Technology Subcommittee for 1982 IEDM
`d. Member of Editorial Board - Proceedings of the IEEE - 1988-
`e. Editor, Proceedings of IEEE - 1993- 2001
`f. Associate Editor - Trans. Electron Devices - 1990-1993
`g. Guest Editor, Special Issue on NSF Engineering Research Centers, Proceedings of
`IEEE, Jan. 1993.
`h. Member, IEEE Publications Board - 1993-
`
`(4) Electronic Materials Committee of AIME - 1985 - 1989
`(5) Materials Research Society
`a. Symposium Co-Chairman - "Impurity Diffusion and Gettering in Silicon" - 1984
`b. Member of Editorial Board - Bulletin of Materials Research Society - 1985-1987
`(6) Co-chair, 1st International Rapid Thermal Processing Conference, Phoenix (1993).
`(7) Co-chair, 2nd International Rapid Thermal Processing Conference, Monterey (1994).
`[8] Co-chair, 3rd International Rapid Thermal Processing Conference, Amsterdam (1995).
`(9) Co-chair, 4th International Rapid Thermal Processing Conference, Boise (1996).
`(10) Co-chair, 5th International Rapid Thermal Processing Conference, New Orleans (1997).
`(11) Co-Chair, Fourth International Workshop on Meas., Characterization, and Modeling of
`Ultra- shallow Doping Profiles in Semiconductors, Research Triangle Park, (1999).
`(12) Member of Editorial Advisory Board, Journal Microfluidics and Nanofluidics, (2008-
`
`
`
`International Activities
`
`
`(1) Instructor, CEI Europe - 1985 - present
`(2) Member, International Advisory Panel, Microelectronics Systems '91 Conference, Kuala
`Lumpur, Malaysia
`(3) Member, International Advisory Committee, Annual Semiconductor Conference '92-99,
`Bucharest, Romania
`(4) Member, International Advisory Committee, 1993 Symposium on Semiconductor Modeling
`and Simulation, Taipei, Taiwan
`(5) Member, Program Committee, Inter. Symposium on Advanced Microelectronic Devices and
`Processing - 1993, Sendai, Japan
`
`
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`SAMSUNG-1015.002
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`Employment Experience
`
`Present- - Lord-Chandran Professor of Engineering, Pratt School of Engineering
`
`1993-1994 - Director, Microfabrication Technology and the associated Research Institute of
`MCNC; Professor, Electrical Engineering, Duke University
`
`1990-1993 - Vice President, MCNC and Executive Director, Center for Microelectronic Systems
`Technologies; Professor, Electrical Engineering, Duke University
`
`1986-1990 - Vice President, Design Research and Technology, MCNC; Professor, Electrical
`Engineering, Duke University
`
`10/88-3/89 - Acting President, MCNC; Professor, Electrical Engineering, Duke University
`
`1981-1985 - Vice President, Research Program Management, MCNC; Professor, Electrical
`Engineering, Duke University
`
`1973-1981 - Supervisor, Bell Laboratories, Reading, PA.
`
`1969-1973 - Member of Technical Staff, Bell Laboratories, Reading, PA.
`
`
`
`Board Memberships
`
`
`1992-1994 - Advanced Technology Applications, Inc.
`1993- Microelectronic Technology Corp.
`1995- present -Engineering Advisory for the Aurora Fund.
`1996- present - Technical Advisory Board, Thunderbird Technologies, Inc.
`2003- present - Technical Advisory Board, R.J. Mears, Inc.
`2004-present – Chairman, Scientific Advisory Board, Advanced Liquid Logic
`
`
`
`Courses Taught
`
`
`EE218 (Integrated Circuit Engineering) Spring Semester 1982-present
`EE163 ( Introduction to Integrated Circuits) Fall/Spring Semester, 1995-99
`EE62 (Introduction to Semiconductor Devices), Spring Semester, 1999-present
`ECE299 (Biochip Engineering), Fall Semester, 2005-2007
`
`
`
`U.S Patents
`
`(1) U.S. Patent 4,033,027 - Dividing Metal Plated Semiconductor Wafers -
`July 5, 1977
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`SAMSUNG-1015.003
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`(2) U.S. Patent 6,911,132 – Apparatus for Manipulating Droplets by Electrowetting-based
`Techniques – June 28, 2005
`(3) U.S. Patent 6,989,234 – Method and Apparatus for Non-Contact Electrostatic Actuation of
`Droplets – January 24, 2006
`(4) U.S. Patent 7,329,545 – Methods for Sampling a Liquid Flow – February 12, 2008
`(5) U.S. Patent 7,439,014 – Droplet-based Surface Modification and Washing – October 21,
`2008
`(6) U.S. Patent 7,569,129 – Methods for manipulating droplets by electrowetting-based
`techniques – August 4, 2009
`(7) U.S. Patent 7,727,723 – Droplet-based pyrosequencing – June 1, 2010.
`(8) U.S. Patent 7,759,132 – Methods for performing microfluidic sampling – July 20, 2010.
`(9) U.S. Patent 8,048,628 – Methods for nucleic acid amplification on a printed circuit board –
`Nov. 1, 2011
`(10) U.S. Patent 8,147,668 – Apparatus for manipulating droplets – April 3, 2012.
`(11) U.S. Patent 8,221,605 – Apparatus for manipulating droplets – July 17, 2012.
`(12) U.S. Patent 8,287,711 – Apparatus for manipulating droplets – October 16, 2012.
`(13) U.S. Patent 8,313,895 – Droplet-based surface modification and washing – Nov. 20, 2012
`(14) U.S. Patent 8,349,276 – Apparatus and methods for manipulating droplets on a printed
`circuit board – Jan. 8, 2013.
`(15) U.S. Patent 8,388,909 – Apparatus and methods for manipulating droplets – Mar.5, 2013.
`(16) U.S. Patent 8,389,297 – Droplet-based affinity assay device and system – Mar.5, 2013.
`(17) U.S. Patent 8,394,249 – Methods for manipulating droplets by electrowetting-based
`techniques – Mar.12, 2013.
`(18) U.S. Patent 8,613,889 – Droplet-based washing – December 24, 2013.
`(19) U.S. Patent 8,541,176 – Droplet-based surface modification and washing – September 24,
`2013.
`(20) U.S. Patent 8,524,506 – Methods for sampling a liquid flow – September 3, 2013.
`(21) U.S. Patent 8,492,168 – Droplet-based affinity assays – July 23, 2013.
`(22) U.S. Patent 8,470,606 – Manipulation of beads in droplets and methods for splitting droplets
`– June 25, 2013.
`(23) U.S. Patent 8,685, 754 – Droplet actuator devices and methods for immunoassays and
`washing – April 1, 2014.
`(24) U.S. Patent 8,846,414 – Detection of cardiac markers on a droplet actuator – Sept. 30, 2014.
`(25) US Patent 8,871,071, “Droplet manipulation device”, Oct. 28, 2014.
`(26) US Patent 8,906,627, “Apparatuses and methods for manipulating droplets”, Dec. 9, 2014.
`(27) US Patent 8,951,721, “Droplet-based surface modification and washing,” Feb. 10, 2015
`(28) US Patent 8,980,198, “Filler fluids for droplet operations,” Mar. 17, 2015
`(29) US Patent 9,046,514, “Droplet actuator devices and methods employing magnetic beads,” -
`June 2, 2015
`(30) US Patent 9,110,017, “Apparatuses and methods for manipulating droplets”, Aug. 18, 2015.
`(31) US Patent 9,180,450 “Droplet manipulation system and method,” Nov. 10, 2015.
`(32) US Patent 9,243,282, “Droplet-based pyrosequencing,” Jan. 26, 2016.
`(33) US Patent 9,395,361, “Bead incubation and washing on a droplet actuator,” July 19, 2016.
`(34) US Patent 9,476,856, “Droplet-based affinity assays,” Oct. 25, 2016.
`
`
`U.S. Applications:
`
`1 20160231268 DROPLET-BASED SURFACE MODIFICATION AND WASHING
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`SAMSUNG-1015.004
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`2 20160114320 Droplet Manipulation Device
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`3 20160108433 SYSTEMS, APPARATUS, AND METHODS FOR DROPLET-BASED
`MICROFLUIDICS CELL PORATION
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`4 20150336098 Apparatuses and Methods for Manipulating Droplets
`
`5 20150314293 Droplet Actuator Devices and Methods Employing Magnetic Beads
`
`6 20150174577 Filler Fluids for Droplet Operations
`
`7 20150148238 DROPLET-BASED SURFACE MODIFICATION AND WASHING
`
`8 20150060284 Apparatuses and Methods for Manipulating Droplets
`
`WO and EP Patents
`
`17. EP1554568A2
`1. EP1859330B1
`18. WO/2004/030820A2
`2. EP2016189B1
`19. WO/2004/029608A1
`3. EP1479365B1
`20. WO/2004/029585A1
`4. EP2016091B1
`5. WO/2009/111723A1 21.
`6. WO/2009/111723A9
`7. EP2016189A2
`8. EP2016091A2
`9. EP1859330A2
`10. WO/2007/120241A3
`11. WO/2007/120241A2
`12. WO/2007/120240A2
`13. WO/2007/120240A3
`14. WO/2006/081558A2
`15. WO/2006/081558A3
`16. EP1554568A4
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`PUBLICATIONS
`REFEREED ARCHIVAL JOURNALS
`
`(1) R. B. Fair, "A Wide Slit Scanning Method for Measuring Electron and Ion Beam Profiles," J.
`Phys. E., 4, 35 (1971).
`(2) R. B. Fair, "A Self-Consistent Method of Estimating Non-Step Junction Doping Profiles from
`Capacitance - Voltage Measurements," J. Electrochem. Soc.,118, 971 (1971).
`(3) R. B. Fair, "Analysis and Design of Ion Beam Deposition Apparatus," J. Appl. Phys., 42,
`3176 (1971).
`(4) R. B. Fair, "Harmonic Distortion in the Junctio n Field-Effect Transistor with Field-
`Dependent Mobility," IEEE Trans. Electron Dev., ED-19, 9 (1972).
`(5) R. B. Fair, "Profile Estimation of High Concentration Arsenic Diffusion," J. Appl. Phys., 43,
`1278 (1972).
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`SAMSUNG-1015.005
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`(6) R. B. Fair, "High Concentration Arsenic Diffusion in Silicon form A Doped Oxide Source,"
`J. Electrochem. Soc., 119, 1389 (1972).
`(7) R. B. Fair and G. R.Weber, "The Effect of Complex Formation on the Diffusion of Arsenic in
`Silicon," J. Appl. Phys., 44, 273 (1973).
`(8) R. B. Fair,"Quantitative Theory of Retarded Base Diffusion in Silicon NPN Structures with
`Arsenic Emitters," J. Appl. Phys., 44, 283 (1973).
`(9) Total Arsenic Concentration in Heavily Doped n and p Type Silicon," J. Appl. Phys., 44, 280
`(1973).
`(10) R. B. Fair, "Explanation of Anomalous Base Regions in Transistors," Appl. Phys. Lett., 22,
`186 (1973).
`(11) R. B. Fair,"Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow
`Arsenic Emitters," IEEE Trans. Electron Devices, Vol. ED-20, 642 (1973).
`(12) R. B. Fair, "Correction of Calculated Vacancy Diffusion Length at 1000 C in Silicon," J.
`Appl. Phys., 44, 3794 (1973).
`(13) R. B. Fair, "Cooperative Effects Between Arsenic and Boron in Silicon During
`Simultaneous Diffusions from Ion-Implanted and Chemical Source Predepositions," Solid State
`Electronics, 17, 17 (1974).
`(14) R. B. Fair, "Graphical Design and Iterative Analysis of the DC Parameters of GaAs FETS,"
`IEEE Trans. Electron Devices, Vol. ED-21, 357 (1974).
`(15) R. B. Fair, "Boron Diffusion in Silicon-Concentration and Orientation Dependence,
`Background Effects and Profile Estimation," J. Electrochem. Soc., 122, 800 (1975).
`(16) R. B. Fair and P.N. Pappas, "Diffusion of Ion Implanted Boron in High Concentration P and
`As-Doped Silicon," J. Electrochemical Soc., 122, 1241 (1975).
`(17) R.B. Fair and P.N. Pappas, "The Gettering of Boron by an Ion-Implanted Antimony Layer
`in Silicon," Solid State Electrons, 18, 1131 (1975).
`(18) R. B. Fair, "Performance Estimation and Optimized Design Considerations for Microwave
`Power GaAs FETS," IEEE Trans. Electron Dev., ED-22, (1975).
`(19) R. B. Fair and J. C. C. Tsai, "The Diffusion of Ion-Implanted As in Si," J. Electrochem.
`Soc., 122, 1689 (1975).
`(20) R. B. Fair and J. C. C. Tsai, "Profile Parameters of Implanted-Diffused Arsenic Layers in
`Silicon," J. Electrochem. Soc., 123, 583 (1976).
`(21) R. B. Fair, "Transistor Design Considerations for Low-Noise Preamplifiers," IEEE Trans.
`Nuclear Sci., Vol. NS-23, 218 (Feb. 1976).
`(22) R. B. Fair, H. W. Wivell, "Zener and Avalanche Breakdown in As-Implanted Low-Voltage
`Si n-p Junctions," IEEE Trans. Electron Dev., Vol. ED-23, p. 512 (May 1976).
`(23) R. B. Fair and J. C. C. Tsai, "A Quantitative Model of the Diffusion of Phosphorus in
`Silicon and the Emitter Dip Effect," J. Electrochem Soc., Vol. 124, 1107 (1977).
`(24) R. B. Fair, "Analysis of Phosphorus-Diffused Layers in Silicon," J. Electrochem. Soc., 125,
`323-327 (Feb. 1978).
`(25) R. B. Fair, "Quantified Conditions for Emitter-Misfit Dislocation Formation in Silicon," J.
`Electrochem. Soc., 125, 928-926 (June, 1978).
`(26) R. B. Fair and J. C. C. Tsai, "Discussion of A Quantitative Model for the Diffusion of
`Phosphorus in Silicon and the Emitter Dip Effect," J. Electrochem. Soc, 125, 997-998 (June
`1978).
`(27) R. B. Fair and J. C. C. Tsai, "Theory and Direct Measurement of Boron Segregation in SiO2
`During Dry, Near Dry, and Wet O2 Oxidation, J. Electrochem. Soc., 125, 2050 (1978).
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`SAMSUNG-1015.006
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`(28) R. B. Fair, "Effect of Strain-Induced Band Gap Narrowing on E-centre Concentrations in
`Si," Inst. Phys. Conf. Ser., No. 46, Chapter 9, 559 (1979).
`(29) R. B. Fair, "The Effect of Strain-Induced Band-Gap Narrowing on High Concentration
`Phosphorus Diffusion in Silicon," J. Appl. Phys., 50, 860 (1979).
`(30) R. B. Fair, "Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon," J. Appl.
`Phys., 50, 6552 (1979).
`(31) R. B. Fair, "On the Role of Self-Interstitials in Impurity Diffusion in Silicon," J. Appl.
`Phys., 51, 5828 (1980).
`(32) R. B. Fair, "Oxidation, Impurity Diffusion and Defect Growth in Silicon - An Overview," J.
`Electrochem. Soc., 128, 1360 (1981).
`(33) R. B. Fair and R. C. Sun, "Threshold Voltage Instability in MOSFET's, Due to Channel Hot
`Hole Emission," IEEE Trans. Electron. Devices, ED-28, 83 (1981).
`(34) R. B. Fair, "Molecular Transport and Diffusion in Solids," Sensors and Activators, 1, 305
`(1981).
`(35) R. B. Fair and A. Carim, "On the Doping Dependence of Oxidation-Induced Stacking Fault
`Shrinkage in Silicon," J. Electrochem Soc., 129, 2319 (1982).
`(36) R. B. Fair, "The Silicon Process Balancing Act for VLSI," Solid State Tech., 25, 220
`(1982).
`(37) W. G. Meyer and R. B. Fair, "Dynamic Behavior of the Build- up of Fixed Charge and
`Interface States During Hot Carrier Injection in Encapsulated MOSFET's," IEEE Trans. Electron
`Dev., Vol. ED-30, 96 (1983).
`(38) R. B. Fair, "MCNC-Organizing Research on the State Level," IEEE Spectrum, Vol. 20, p.
`58 (1983).
`(39) R. B. Fair, J. J. Wortman, J. Liu, M. Tischler and N.A. Masnari, "Modeling Physical
`Limitations on Junction Scaling for CMOS," IEEE Trans. Electron Dev., Vol ED-31, 1180
`(1984).
`(40) R. B. Fair, J. J. Wortman and J. Liu, "Modeling Rapid Thermal Diffusion of Arsenic and
`Boron in Silicon," J. Electrochem. Soc., 131, 2387 (1984).
`(41) R. B. Fair, "The Role of Vacancies and Self-Interstitials in Impurity Diffusion in Silicon,"
`Materials Science Forum , Vol. 1. (Trans. Tech. Pub. Switzerland) pp. 109-132 (1984).
`(42) W. B. Wilson, H. Z Massoud, E. T. Swanson, R. T. George and R. B. Fair "Measurement
`and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches," IEEE J. Solid State
`Cir. Vol. SC-20, pp. 1206-1213 (1985).
`(43) J. Liu, J. J. Wortman and R. B. Fair, Shallow p +-n Junction for CMOS VLSI Application
`Using Germanium Preamorphization, IEEE Trans. Electron. Dev., Vol ED-32, 2533 (1985).
`(44) R.B. Fair, ''Modeling of Dopant Diffusion During Rapid Thermal Annealing," J. Vac. Sci.
`Technology A4, 926 (1986).
`(45) R. B. Fair, M. L. Manda and J. J. Wortman, "The Diffusion of Antimony in Heavily Doped
`n- and p-type Silicon," J. Mates. Res., 1,705 -717 (1986).
`(46) J. C. C. Tsai, D. G. Schimmel, R. B. Fair and W. Maszara, "Point Defect Generation During
`Phosphorus Diffusion in Silicon-1. Concentrations Above Solid Solubility," J. Electrochem.
`Soc., .134, 1508 (1987).
`(47) R. Subrahmanyan, H. Z. Massoud and R. B. Fair, "The Influence of HCl on the Oxidation -
`Enhanced Diffusion of Boron and Arsenic in Silicon," J. Appl. Phys., 61, 4804 (1987).
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`SAMSUNG-1015.007
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`(48) J. C. Tsai, D. G. Schimmel, R. E. Ahrens and R. B. Fair, "Point Defect Generation During
`Phosphorus Diffusion in Silicon II. Concentrations below Solid Solubility, Ion-Implanted
`Phosphorus," J. Electrochem. Soc., 134, 2348 (1987).
`(49) R. B. Fair, "Reply to Comments of F. F. Morehead," J. Mater. Res., 2, 539 (1987).
`(50) R. B. Fair, ."Low-Thermal Budget Process Modeling with the PREDICT Computer
`Program," IEEE Trans. Electron. Dev., .35, 285 (1988).
`(51) A. C. Ajmera, G. A. Rozgonyi and R. B. Fair "Point Defect/Dopant Diffusion
`Considerations Following Preamorphization of Silicon via Si+ and Ge+ Implantation, " Appl.
`Phys. Lett., 52 (10), 813 (1988).
`(52) R.B. Fair and J.E. Rose, "Process Simulation of Submicron Technologies" Semicond.
`Int.,13, 72, (1987).
`(53) M. C. Ozturk, J. J. Wortman and R. B. Fair,."Very Shallow P+n Junction Formation by Low
`Energy BF2+ Ion Implantation into Crystalline and Germanium Preamorphized Silicon," Appl.
`Phys. Lett., 52 (12), 963 (1988).
`(54) R. Subrahmanyan, H. Z. Massoud and R. B. Fair, "Experimental Characterization of Two-
`Dimensional Dopant Profiles in Silicon Using Chemical Staining," Appl. Phys. Lett., 52 (25),
`2145 (1988).
`(55) Y. Kim, H.Z. Massoud and R.B. Fair, "Boron Profile Changes During Low-Temperature
`Annealing of BF2+-implanted Silicon," Appl. Phys. Lett., .53, 2197 (1988).
`(56) Y. Kim, H.Z. Massoud and R.B. Fair, "The Effect of Ion-Implantation Damage on Dopant
`Diffusion in Silicon During Shallow-Junction Formation," J. Electronic Mater., 18, 143 (1989).
`(57) R.B. Fair, "The Role of Transient Damage Annealing in Shallow Junction Formation,"
`Nuclear Instr. and Methods, B37/38, 371 (1989).
`(58) W.B. Rogers, H.Z. Massoud, R.B. Fair, U.M. Gosele, T.Y. Tan and G.A. Rozgonyi, "The
`Role of Silicon Self-Interstitials Supersaturation in the Retardation of Oxygen Precipitation in
`Czochralski Silicon," J. Appl. Phys., 65, 4215-4219 (1989).
`(59) R.B. Fair, "Point Defect Charge-State Effects on Transient Diffusion of Dopants in Si," J.
`Electrochem. Soc., 137, 667 (1990).
`(60) R.B. Fair and G.A. Ruggles, "Thermal Budget Issues for Deep Submicron ULSI," Solid
`State Tech., .33, 107 (1990).
`(61) R.B. Fair, "Damage Removal/Dopant Diffusion Tradeoffs in Ultra-Shallow Implanted p+-n
`Junctions," IEEE Trans. Electron Dev., vol 37, 2237 (1990).
`(62) Y. Kim, H.Z. Massoud and R.B. Fair, "The Effect of Annealing Ambient on Dopant
`Diffusion in Silicon during Low Temperature Processing, J. Electrochem. Soc. 137, 2599-2603
`(1990).
`(63) R.B. Fair (Invited), "Challenges to Manufacturing Submicron, Ultra-Large Scale Integrated
`Circuits," Proc. IEEE, .78, pp. 1687-1705, Nov. 1990.
`(64) R. Subrahmanyan, H.Z. Massoud and R.B. Fair, "Comparison of Measured and Simulated
`Two Dimensional Profiles in Si," J. Electrochem Soc., 137, 1573 (1990).
`(65) R.B. Fair, C.L. Gardner, M.J. Johnson, S.W. Kenkel, D.J. Rose, J.E. Rose and R.
`Subrahmanyan, "Two-Dimensional Process Simulation Using Verified Phenomenological
`Models," IEEE Trans. Computer-Aided Design, vol. 10, p. 643 (1991).
`(66) M.R. Mirabedini, S.H. Goodwin-Johansson, H.Z. Massoud and R.B. Fair, "Subquarter-
`micrometer Elevated Source and Drain MOSFET Structure using Polysilicon Spacers,"
`Electronic Lett., 30, 1631 (1994).
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`SAMSUNG-1015.008
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`(67) R.B. Fair and R.A. Gafiteanu, "Modeling Boron Difusion in Thin Oxide p+ Si Gate
`Technology," IEEE Electron Dev. Lett., 17, 497-499 (1996).
`(68) R.B. Fair, "Oxide Thickness Effect on Boron Diffusion in Thin Oxide p+ Si Gate
`Technology," IEEE Electron Dev. Lett., 17, 242 (1996).
`[69] R.B. Fair, "Physical Models of Boron Diffusion in Ultrathin Gate Oxides," J. Electrochem.
`Soc., 144, 708 (1997).
`(70) R.B. Fair, "Modeling Boron Diffusion in Ultrathin Nitrided Oxide p+ Si Gate Technology,"
`IEEE Electron Dev. Lett., 18, 244 (1997).
`(71) G. Chen, T. Borca-Tasciuc, and R.B. Fair, "Photon Effect on Radiative Properties of Silicon
`During Rapid Thermal Processing," J. Appl. Phys. 82, 830 (1997).
`[72] R.B. Fair, "History of Some Early Developments in Ion Implantation Technology
`Leading to Silicon Transistor Manufacturing," Proc. of IEEE, 86, 111 (1998).
`(73) R.B. Fair and S. Li, "Photonic Effects in the Deactivation of Ion Implanted Arsenic," J.
`Appl. Phys., 83, 4081 (1998).
`(74) N. Vasudevan, R.B. Fair, and H.Z. Massoud, "Energy Considerations During the Growth of
`a Molten Filament in Metal-to-metal Amorphous-silicon Antifuses," J. Appl. Phys., 84, 4979
`(1998).
`(75) T.W. Tsuei, R.L. Wood, C.K. Malek, M.M. Donnelly, and R. B. Fair, "Tapered Microvalves
`Fabricated by Off-axis X-ray Exposures," Microsystem Technologies, 4, 201 (1998).
`(76) N. Vasudevan, R.B. Fair, and H.Z. Massoud, "ON-state Reliability of Amorphous-silicon
`Antifuses, J. Appl. Phys., 84, 6440 (1998).
`(77) N. Vasudevan, H.Z. Massoud, and R.B. Fair, "A Thermal Model for the Initiation of
`Programming in Metal-to-Metal Amorphous-Silicon Antifuses," J. Electrochem. Soc., 146,
`1536-1539 (1999).
`(78) R.B. Fair, "Anomalous B Penetration Through Ultrathin Gate Oxides During Rapid Thermal
`Annealing," IEEE Electron Dev. Lett., 20, 466 (1999).
`(79) Y. Wu, H. Niimi, H. Yang, G. Lucovsky, and R.B. Fair, "Suppression of Boron Transport
`Out of p+ Polycrystalline Silicon at Polycrystalline Silicon Dielectric Interfaces," J. Vac. Sci.
`Technol. B, 17(4), 1813-1822 (1999).
`(80) T. Zhang, A. Dewey, and R.B. Fair, "A Heirarchical Approach to Stochastic Discrete and
`Continuous Performance Simulation Using Composable Software Components," J.
`Microelectronics, 31 (1999).
`(81) M.G. Pollack, R.B. Fair, and A.D. Shenderov, "Electrowetting-Based Actuation of Liquid
`Droplets for Microfluidic Applications," Appl. Phys. Lett., 77, 1725 (2000).
`(82) T. Zhang, F. Cao, A. Dewey, R.B. Fair, and K. Chakrabarty, "Performance Analysis of
`Microelectrofluidic Systems Using Hierarchical Modeling and Simulation," IEEE Trans. Circuits
`and Systems II: Analog and Digital Processing, vol. 48, 482 (2001).
`(83)
`J. Ding, K. Chakrabarty and R. B. Fair, "Scheduling of Microfluidic Operations for
`Reconfigurable Two-Dimensional Electrowetting Arrays", IEEE Transactions on Computer-
`Aided Design of Integrated Circuits & Systems, 29, 1463-1468 (2001).
`(84) T. Zhang, K. Chakrabarty and R. B. Fair, "Design of Reconfigurable Composite
`Microsystems Based on Hardware/Software Co-design Principles,” IEEE Transactions on
`Computer Aided Design of Integrated Circuits and Systems, 21, 987 (2002).
`(85) M.G. Pollack, A.D. Shenderov, and R.B. Fair, “Electrowetting-based Actuation of
`Droplets for Integrated Microfluidics,” Lab on a Chip, vol. 2, pp. 96-101, 2002.
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`(86) T. Zhang, K. Chakrabarty and R. B. Fair, "Integrated hierarchical design of
`microelectrofluidic systems using SystemC", Microelectronics Journal, vol. 33, pp. 459-470,
`May 2002.
`(87) H. Ren, R. B. Fair, M. G. Pollack and E. J. Shaughnessy, “Dynamics of Electro-wetting
`Droplet Transport, Sensors and Actuators B: Chemical, Volume 87, Issue 1, 15 November 2002,
`Pages 201-206.
`(88)
`P. Paik, V.K. Pamula, M.G. Pollack, and R.B. Fair, “Electrowetting-Based Droplet
`Mixers for Microfluidic Systems,” Lab on a Chip, vol. 3, pp.28-33 (2003).
`(89) H. Ren, R.B. Fair, and M. Pollack, “Automated On-Chip Droplet Dispensing with
`Volume Control by Electrowetting Actuation and Capacitance Metering”, Sensors and Actuators
`B, 98, 319-327 (2004).
`(90)
`P. Paik, V.K. Pamula, and R.B. Fair, “Rapid Droplet Mixers for Digital Microfluidic
`Systems,” Lab, on a Chip, vol. 3, pp.253-259 (2003).
`(91) V. Srinivasan, V.K. Pamula, and R.B. Fair, “Droplet-based microfluidic lab-on-a-chip for
`glucose detection,” Analytica Chimica Acta, Vol. 507, 145-150 (2004).
`(92) T. Zhang, K. Chakrabarty, and R.B. Fair, “Behavioral Modeling and Performance
`Evaluation of Microfluidics- Based PCR Systems Using System C”, IEEE Trans, Computer-
`Aided Design of Integrated Cir. And Sys., vol. 23, 843 (2004).
`(93) V. Srinivasan, V.K. Pamula, and R.B. Fair, “An Integrated Digital Microfluidic Lab-on-
`a-Chip for Clinical Diagnostics on Human Physiological Fluids,” Lab-On-A-Chip, 4, 310 (2004).
`(94)
`F. Su, K. Chakrabarty, and R.B. Fair, “Microfluidics-Based Biochips: Technology Issues,
`Implementation Platforms, and Design Automation Challenges,” IEEE Trans. Computer-Aided
`Des. Of Integ. Cir. And Sys., vol. 25, pp. 211-223 (2006).
`(95) R.B. Fair, “Digital Microfluidics: is a true lab-on-a-chip possible?” J. Microfluidics and
`Nanofluidics, vol. 3, 245-281 (2007). (Invited)
`(96) R.B. Fair, A. Khylstov, T.D. Tailor, V. Ivanov, R.D. Evans, V.Srinivasan, V.K. Pamula,
`M.G. Pollack, P.B. Griffin, J. Zhou, “Chemical and Biological Applicatio ns of Digital
`Microfluidic Devices,” IEEE Design and Test of Computers, 24, No. 1, pp.10-24, Jan-Feb
`(2007). (Invited)
`(97)
`J. Zhou, L. Lu, K. Byrapogu, D. Wootton; P. Lelkes, and R. Fair, “Electrowetting Based
`Multi- microfluidics Array Printing of High Resolution Tissue Construct with Embedded Cells
`and Growth Factors,” Virtual and Physical Prototyping, 2:4, 217 – 223 (2007).
`(98) L. Luan, R.D. Evans, N.M. Jokerst, and R.B. Fair, “Integrated Optical Sensor in a Digital
`Microfluidic Platform,” IEEE Sensors J., vol. 8, pp. 628-635 (2008).
`(99) R. B. Fair and M. A. Shannon and O. K. Tan and O. Geschke and C. H. Ahn and O.
`Kaynak and M. J. Vellekoop, Introduction for the special issue on sensors for microfluidic
`analysis systems, IEEE Sensors Journal, (2008), vol. 8, pp. 427 – 429.
`(100) R.B. Fair, “What is a lab-on-a-chip?” ACM/SIGDA Newsletter, vol. 38, No. 12, (2008)
`(101) J.H. Song, R. Evans, Y.-Y. Lin, B.-N. Hsu, and R.B. Fair, “A Scaling Model for
`Electrowetting-on-Dielectric Microfluidic Actuators,” Microfluid Nanofluid Online First, Nov.
`2008. In print: vol. 7, 75-89 (2009)
`(102) K. Chakrabarty, R.B. Fair, and J. Zeng, “Design Tools for Digital Microfluidic Biochips:
`Toward Functional Diversification and More than Moore,” IEEE Trans. Computer-Aided Des.
`Integrated Cir. And Sys., vol 29, No. 7,pp. 1001-1017 (2010).
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`(103) Y-Y Lin, R.D. Evans, E. Welch, B-N Hsu. A.C. Madison and R.B. Fair, Low-voltage
`electrowetting-on-dielectric platform using multi- layer insulators,” Sensors and Actuators B:
`Chemical, v. 150, 465-470 (2010)
`(103) E.R. Welch, Y-Y Lin, A. Madison, R.B. Fair, “Picoliter DNA sequencing chemistry on an
`electrowetting-based digital microfluidic platform,” BioTechnology Journal, v. 6, pp. 165-176
`(2011)
`(104) D.J. Boles, J.L. Benton, G.J.Siew, M.H. Levy, P.K. Thwar, M.A. Sandahl, J.L. Rouse, L.C.
`Perkins, A.P. Sudarsan, R. Jalili, V.K. Pamula, V. Srinivasan, R.B. Fair, P.B. Griffin, A.E.
`Eckhardt, M.G. Pollack, “Droplet-based pyrosequencing using digital microfluidics,” Anal.
`Chem, 83, 8439 (2011)
`(105) L. Luan, M.W. Royal, R. Evans, R.B. Fair, and N.M. Jokerst, “Chip scale microresonator
`sensors integrated with embedded thin film photodetectors on electrowetting digital
`microfluidics platforms,” IEEE Sensors Journal, v. 12, pp. 1794-1800, (2012)
`(106) Y-Y Lin, E.F. Welch, R.B. Fair, “Low voltage picoliter droplet manipulation utilizing
`electrowetting-on-dielectric platforms,” Sensors & Actuators, B: Chem. v. 173, pp. 338-345
`(2012), http://dx.doi.org/10.1016/j.snb.2012.07.022
`(107) M.W. Royal, N.M. Jokerst, and R.B. Fair, “Integrated sample preparation and sensing:
`polymer microresonator sensors embedded in digital electrowetting microfluidic systems,” IEEE
`Photonics J., 4, 2126-35 (2012)
`(108) M.W. Royal, N.M. Jokerst, and R.B. Fair, “Droplet-based sensing: Optical microresonator
`sensors embedded in digital microfluidics systems, IEEE Sensors J., 13, 4733-42, Dec. 2013.
`(109) L. Chen and R.B. Fair, “Digital microfluidics chip with integrated intra-droplet magnetic
`bead manipulation,” Microfluid Nanofluid, published online 24 September, 2015. Print: vol. 19,
`No. 6, pp. 1335-1348, Dec, 2015.
`(110) A.C. Madison, M.W. Royal, and R.B. Fair, “Fluid transport in partially shielded
`electrowetting on dielectric digital microfluidic device,” J. Microelectromechanical Sys., vol. 25,
`593-605 (2016).
`(111) J.A. Moore, N. Nemat-Gorgani, A.C. Madison, M.A. Sandahl, S. Punnamaraju, A.E.
`Eckhardt, M.G. Pollack, F.m Vigneault, G.M. Church, R.B. Fair, M.A. Horowitz and P.B.
`Griffin, “Automkated rlrctrotransformation of E. Coli on a digital microfluidic platform using
`bioactivated magnetic beads,” Biomicrofluidics, vol. 11, p. 014110 (2017).
`
`
`REFEREED CONFERENCE PROCEEDINGS
`
`(1) A. B. El-Kareh, R. B. Fair and C. R. Marsh, "A Machine-Scan Electron Beam Device," Proc.
`8th Electron and Laser Beam Symp., p. 331 (1966).
`(2) R. B. Fair,"Quantitative Theory of Retarded Base Diffusion in Silicon NPN Structures with
`Arsenic Emitters," 1972 IEDM Tech. Dig., p. 96 (1972).
`(3) R. B. Fair, "Recent Advances in Implantation and Device Modeling for the Design and
`Process Control of Bipolar ICs, in Semiconductor Silicon 1977, Eds. H. R. Huff and E. Sirtl, pp.
`968-987, (The Electrochemical Soc.) 1977.
`(4) R. B. Fair, "Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon," "Proc. of
`Laser and Electron Beam Processing of Electronic Materials," (Ed. by C. L. Anderson, G. K.
`Celler, G. A. Rozgonyi, The Electrochem. Soc., Princeton) p. 204.
`(5) R. B. Fair and R. C. Sun, "Threshold Voltage Instability in MOSFET's Due to Channel Hot
`Hole Emission," in Tech. Digest of the Inter. Electron Device Meeting, p. 746 (1980).
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`(6) R. B. Fair, "Modeling Anomalous Phenomena in Arsenic Diffusion in Silicon," in
`Semiconductor Silicon/1981. Eds. H. R. Huff, R. J. Krogler and Y. Takeishi. (The Electronic
`Society, Inc., Pennington, N.J., 1981) p.963.
`(7) R. B. Fair and W. G. Meyer, "Anomalous Junctions Formed by Cross-contamination of
`Phosphorus During Arsenic Implantation in Silicon," in Silicon Processing, ASTM STP804,
`D.C. Gupta, Ed., American Society for Test and Mater., 1983, pp. 290-305.
`(8) R. B. Fair, "Impurity Concentration Doping Effects on Impurity Diffusion in Silicon,"
`Semiconductor Processing and Equipment Sym. Tech. Proc., p. 230 (1983).
`(9) R. B. Fair, "Modeling of Dopant Diffusion and Associated Effects in Silicon" in Defects in
`Semiconductors II, Mat. Res. Soc. Symp. Proc. Vol. 14 (Elsevier, Amsterdam), pp.\ 61-74
`(1983).
`(10) R. B. Fair, "MCNC - A New Multi-Institutional Thrust in ManufacturingTechnology,"
`Proceedings UGIM-83, IEEE, p. 10, 1983.
`(11) R. B. Fair, J. J. Wortman, J. Liu, "Modeling Rapid Thermal Annealing Processes for
`Shallow Junction Formation in Silicon," 1983 IEDM Tech. Dig., pp. 658-661 (1983).
`(12) B. Rogers, R. B. Fair, W. Dyson and G. A. Rozgonyi, "Computer Simulation of Oxygen
`Precipitation and Denuded Zone Formation," in VLSI Science and Technology 1984,
`Proceedings of the 2nd International Symposium on VLSI Science and Technology, Vol. 84-7
`(The Electrochemical Society, Pennington, NJ) pp. 74- 84 (1984).
`(13) R. B. Fair, "Observations of Vacancies and Self-Interstitials in Diffusion Experiments in
`Silicon," in Thirteenth Inter. Conf. on Defects in Semiconductors, Vol. 14a (Metallurgical Soc.,
`Warrendale, PA.) ed. L. C. Kimberling and J. M. Parsey, pp. 173-185 (1984).
`(14) R.B. Fair and R. Subrahmanyan, "PREDICT- A New Design Tool for Shallow Junction
`Processes," Proc., Adv. Applications of Ion Implantation, Vol. 530 (The Inter. Society for
`Optical Engineering, Bellingham, WA) ed. M.I. Current and D. K. Sadana, pp. 88-96 (1985).
`(15) R. B. Fair and J. E. Rose, "A deep Decision Tree Approach to Modeling Submicron Sili