RESUME
`Richard B. Fair
`3414 CAMBRIDGE RD.
`DURHAM, NORTH CAROLINA 27707
`
`EDUCATION AND HONORS
`
`BSEE - Duke University, Durham, N.C., 1964, Presbyterian Church Scholarship, 1961.
`MSEE - Penn State University, University Park, Pa., 1966, Sylvania Fellow, 9-64/6-66.
`Ph.D. - Duke University, Durham, N.C., 1969, NDEA Fellow, 9-66/6-69.
`
`Awards
`
`(1) Outstanding Paper Award - IEEE Spring Symp., Duke University, 1969.
`(2) "Outstanding Young Men of America" Award, 1973.
`(3) "Outstanding Young Electrical Engineer of the Year" Award, 1974 -National Award from Eta
`Kappa Nu.
`(4) American Men and Women in Science, 1979 - Present
`(5) Who's Who in Technology Today, 1980, 81.
`(6) Adjunct Professor, Dept. of Electrical Eng., Duke University, 1980-81.
`(7) Who's Who in Frontiers of Science and Technology, 1985, 1986
`(8) Who's Who in the Semiconductor Industry, 1986.
`(9) Fellow Award, IEEE, 1990
`(10) Who's Who in Engineering, 1991, 1993
`[11] Who's Who in America, 1991, 1993
`(12) Fellow Award, Electrochemical Society, 1994
`(13) Professor James F. Gibbons Achievement Award, 4th International
`Conference on Advanced Thermal Processing, 1996
`(14) Third Millennium Medal, IEEE, 2000
`(15) Solid State Science and Technology Award – The Electrochemical Society, 2003
`
`MEMBERSHIPS / PROFESSIONAL ACTIVITIES
`
`(1) Member, Sigma Xi
`(2) Fellow, Electrochemical Society
`a. Session Chairman numerous times, 1975-present
`b. Symposium Chairman - "Diffusion Processes in Semiconducting Materials," St. Louis,
`1980
`c. Member of Electronics Division Executive Committee, 1987 -
`d. Organizing Committee - 6th International Symposium on ULSI Science and
`Technology
`e. Organizing Committee - 1st Inter. Conf. On ULSI Process Integration - 1999.
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`f. Organizing Committee - Joint Electronics/Dielectric General Session - 1997-
`g. Co-chair, Sixth International Symposium on ULSI Science and Technology, Montreal
`(1997)
`
`(3) Fellow- IEEE
`a. Session Chairman at 1977-78 International Electron Device Meetings (IEDM)
`b. Chairman, Solid State Device Committee for 1978 IEDM
`c. Member, Integrated Circuit Technology Subcommittee for 1982 IEDM
`d. Member of Editorial Board - Proceedings of the IEEE - 1988-
`e. Editor, Proceedings of IEEE - 1993- 2001
`f. Associate Editor - Trans. Electron Devices - 1990-1993
`g. Guest Editor, Special Issue on NSF Engineering Research Centers, Proceedings of IEEE,
`Jan. 1993.
`h. Member, IEEE Publications Board - 1993-
`
`(4) Electronic Materials Committee of AIME - 1985 - 1989
`(5) Materials Research Society
`a. Symposium Co-Chairman - "Impurity Diffusion and Gettering in Silicon" - 1984
`b. Member of Editorial Board - Bulletin of Materials Research Society - 1985-1987
`(6) Co-chair, 1st International Rapid Thermal Processing Conference, Phoenix (1993).
`(7) Co-chair, 2nd International Rapid Thermal Processing Conference, Monterey (1994).
`[8] Co-chair, 3rd International Rapid Thermal Processing Conference, Amsterdam (1995).
`(9) Co-chair, 4th International Rapid Thermal Processing Conference, Boise (1996).
`(10) Co-chair, 5th International Rapid Thermal Processing Conference, New Orleans (1997).
`(11) Co-Chair, Fourth International Workshop on Meas., Characterization, and Modeling of Ultra-
`shallow Doping Profiles in Semiconductors, Research Triangle Park, (1999).
`
`International Activities
`
`(1) Instructor, CEI Europe - 1985 - present
`(2) Member, International Advisory Panel, Microelectronics Systems '91 Conference, Kuala
`Lumpur, Malaysia
`(3) Member, International Advisory Committee, Annual Semiconductor Conference '92-99,
`Bucharest, Romania
`(4) Member, International Advisory Committee, 1993 Symposium on Semiconductor Modeling
`and Simulation, Taipei, Taiwan
`(5) Member, Program Committee, Inter. Symposium on Advanced Microelectronic Devices and
`Processing - 1993, Sendai, Japan
`
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`Present- - Professor, Electrical Engineering, Duke University
`
`Employment Experience
`
`1993-1994 - Director, Microfabrication Technology and the associated Research Institute of
`MCNC; Professor, Electrical Engineering, Duke University
`
`1990-1993 - Vice President, MCNC and Executive Director, Center for Microelectronic Systems
`Technologies; Professor, Electrical Engineering, Duke University
`
`1986-1990 - Vice President, Design Research and Technology, MCNC; Professor, Electrical
`Engineering, Duke University
`
`10/88-3/89 - Acting President, MCNC; Professor, Electrical Engineering, Duke University
`
`1981-1985 - Vice President, Research Program Management, MCNC; Professor, Electrical
`Engineering, Duke University
`
`1973-1981 - Supervisor, Bell Laboratories, Reading, PA.
`
`1969-1973 - Member of Technical Staff, Bell Laboratories, Reading, PA.
`
`Board Memberships
`
`1992-1994 - Advanced Technology Applications, Inc.
`1993- Microelectronic Technology Corp.
`1995- present -Engineering Advisory for the Aurora Fund.
`1996- present - Technical Advisory Board, Thunderbird Technologies, Inc.
`2003- present - Technical Advisory Board, R.J. Mears, Inc.
`2004-present – Chairman, Scientific Advisory Board, Advanced Liquid Logic
`
`Courses Taught
`
`EE218 (Integrated Circuit Engineering) Spring Semester 1982-present
`EE163 ( Introduction to Integrated Circuits) Fall/Spring Semester, 1995-99
`EE62 (Introduction to Semiconductor Devices), Spring Semester, 1999-present
`ECE299 (Biochip Engineering), Fall Semester, 2005
`
`(1) U.S. Patent 4,033,027 - Dividing Metal Plated Semiconductor Wafers -
`July 5, 1977
`
`Patents
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`(2) U.S. Patent 6,911,132 – Apparatus for Manipulating Droplets by Electrowetting-based
`Techniques – June 28, 2005
`(3) U.S. Patent 6,989,234 – Method and Apparatus for Non-Contact Electrostatic Actuation of
`Droplets – January 24, 2006
`(4) 7 patents pending.
`
`PUBLICATIONS
`REFEREED ARCHIVAL JOURNALS
`
`(1) R. B. Fair, "A Wide Slit Scanning Method for Measuring Electron and Ion Beam Profiles," J.
`Phys. E., 4, 35 (1971).
`(2) R. B. Fair, "A Self-Consistent Method of Estimating Non-Step Junction Doping Profiles from
`Capacitance - Voltage Measurements," J. Electrochem. Soc.,118, 971 (1971).
`(3) R. B. Fair, "Analysis and Design of Ion Beam Deposition Apparatus," J. Appl. Phys., 42, 3176
`(1971).
`(4) R. B. Fair, "Harmonic Distortion in the Junction Field-Effect Transistor with Field-Dependent
`Mobility," IEEE Trans. Electron Dev., ED-19, 9 (1972).
`(5) R. B. Fair, "Profile Estimation of High Concentration Arsenic Diffusion," J. Appl. Phys., 43,
`1278 (1972).
`(6) R. B. Fair, "High Concentration Arsenic Diffusion in Silicon form A Doped Oxide Source," J.
`Electrochem. Soc., 119, 1389 (1972).
`(7) R. B. Fair and G. R.Weber, "The Effect of Complex Formation on the Diffusion of Arsenic in
`Silicon," J. Appl. Phys., 44, 273 (1973).
`(8) R. B. Fair,"Quantitative Theory of Retarded Base Diffusion in Silicon NPN Structures with
`Arsenic Emitters," J. Appl. Phys., 44, 283 (1973).
`(9) Total Arsenic Concentration in Heavily Doped n and p Type Silicon," J. Appl. Phys., 44, 280
`(1973).
`(10) R. B. Fair, "Explanation of Anomalous Base Regions in Transistors," Appl. Phys. Lett., 22,
`186 (1973).
`(11) R. B. Fair,"Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow
`Arsenic Emitters," IEEE Trans. Electron Devices, Vol. ED-20, 642 (1973).
`(12) R. B. Fair, "Correction of Calculated Vacancy Diffusion Length at 1000 C in Silicon," J.
`Appl. Phys., 44, 3794 (1973).
`(13) R. B. Fair, "Cooperative Effects Between Arsenic and Boron in Silicon During Simultaneous
`Diffusions from Ion-Implanted and Chemical Source Predepositions," Solid State Electronics, 17,
`17 (1974).
`(14) R. B. Fair, "Graphical Design and Iterative Analysis of the DC Parameters of GaAs FETS,"
`IEEE Trans. Electron Devices, Vol. ED-21, 357 (1974).
`(15) R. B. Fair, "Boron Diffusion in Silicon-Concentration and Orientation Dependence,
`Background Effects and Profile Estimation," J. Electrochem. Soc., 122, 800 (1975).
`(16) R. B. Fair and P.N. Pappas, "Diffusion of Ion Implanted Boron in High Concentration P and
`As-Doped Silicon," J. Electrochemical Soc., 122, 1241 (1975).
`(17) R.B. Fair and P.N. Pappas, "The Gettering of Boron by an Ion-Implanted Antimony Layer in
`Silicon," Solid State Electrons, 18, 1131 (1975).
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`(18) R. B. Fair, "Performance Estimation and Optimized Design Considerations for Microwave
`Power GaAs FETS," IEEE Trans. Electron Dev., ED-22, (1975).
`(19) R. B. Fair and J. C. C. Tsai, "The Diffusion of Ion-Implanted As in Si," J. Electrochem. Soc.,
`122, 1689 (1975).
`(20) R. B. Fair and J. C. C. Tsai, "Profile Parameters of Implanted-Diffused Arsenic Layers in
`Silicon," J. Electrochem. Soc., 123, 583 (1976).
`(21) R. B. Fair, "Transistor Design Considerations for Low-Noise Preamplifiers," IEEE Trans.
`Nuclear Sci., Vol. NS-23, 218 (Feb. 1976).
`(22) R. B. Fair, H. W. Wivell, "Zener and Avalanche Breakdown in As-Implanted Low-Voltage Si
`n-p Junctions," IEEE Trans. Electron Dev., Vol. ED-23, p. 512 (May 1976).
`(23) R. B. Fair and J. C. C. Tsai, "A Quantitative Model of the Diffusion of Phosphorus in Silicon
`and the Emitter Dip Effect," J. Electrochem Soc., Vol. 124, 1107 (1977).
`(24) R. B. Fair, "Analysis of Phosphorus-Diffused Layers in Silicon," J. Electrochem. Soc., 125,
`323-327 (Feb. 1978).
`(25) R. B. Fair, "Quantified Conditions for Emitter-Misfit Dislocation Formation in Silicon," J.
`Electrochem. Soc., 125, 928-926 (June, 1978).
`(26) R. B. Fair and J. C. C. Tsai, "Discussion of A Quantitative Model for the Diffusion of
`Phosphorus in Silicon and the Emitter Dip Effect," J. Electrochem. Soc, 125, 997-998 (June 1978).
`(27) R. B. Fair and J. C. C. Tsai, "Theory and Direct Measurement of Boron Segregation in SiO2
`During Dry, Near Dry, and Wet O2 Oxidation, J. Electrochem. Soc., 125, 2050 (1978).
`(28) R. B. Fair, "Effect of Strain-Induced Band Gap Narrowing on E-centre Concentrations in Si,"
`Inst. Phys. Conf. Ser., No. 46, Chapter 9, 559 (1979).
`(29) R. B. Fair, "The Effect of Strain-Induced Band-Gap Narrowing on High Concentration
`Phosphorus Diffusion in Silicon," J. Appl. Phys., 50, 860 (1979).
`(30) R. B. Fair, "Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon," J. Appl.
`Phys., 50, 6552 (1979).
`(31) R. B. Fair, "On the Role of Self-Interstitials in Impurity Diffusion in Silicon," J. Appl. Phys.,
`51, 5828 (1980).
`(32) R. B. Fair, "Oxidation, Impurity Diffusion and Defect Growth in Silicon - An Overview," J.
`Electrochem. Soc., 128, 1360 (1981).
`(33) R. B. Fair and R. C. Sun, "Threshold Voltage Instability in MOSFET's, Due to Channel Hot
`Hole Emission," IEEE Trans. Electron. Devices, ED-28, 83 (1981).
`(34) R. B. Fair, "Molecular Transport and Diffusion in Solids," Sensors and Activators, 1, 305
`(1981).
`(35) R. B. Fair and A. Carim, "On the Doping Dependence of Oxidation-Induced Stacking Fault
`Shrinkage in Silicon," J. Electrochem Soc., 129, 2319 (1982).
`(36) R. B. Fair, "The Silicon Process Balancing Act for VLSI," Solid State Tech., 25, 220 (1982).
`(37) W. G. Meyer and R. B. Fair, "Dynamic Behavior of the Build-up of Fixed Charge and
`Interface States During Hot Carrier Injection in Encapsulated MOSFET's," IEEE Trans. Electron
`Dev., Vol. ED-30, 96 (1983).
`(38) R. B. Fair, "MCNC-Organizing Research on the State Level," IEEE Spectrum, Vol. 20, p. 58
`(1983).
`(39) R. B. Fair, J. J. Wortman, J. Liu, M. Tischler and N.A. Masnari, "Modeling Physical
`Limitations on Junction Scaling for CMOS," IEEE Trans. Electron Dev., Vol ED-31, 1180 (1984).
`(40) R. B. Fair, J. J. Wortman and J. Liu, "Modeling Rapid Thermal Diffusion of Arsenic and
`Boron in Silicon," J. Electrochem. Soc., 131, 2387 (1984).
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`(41) R. B. Fair, "The Role of Vacancies and Self-Interstitials in Impurity Diffusion in Silicon,"
`Materials Science Forum , Vol. 1. (Trans. Tech. Pub. Switzerland) pp. 109-132 (1984).
`(42) W. B. Wilson, H. Z Massoud, E. T. Swanson, R. T. George and R. B. Fair "Measurement and
`Modeling of Charge Feedthrough in n-Channel MOS Analog Switches," IEEE J. Solid State Cir.
`Vol. SC-20, pp. 1206-1213 (1985).
`(43) J. Liu, J. J. Wortman and R. B. Fair, Shallow p +-n Junction for CMOS VLSI Application
`Using Germanium Preamorphization, IEEE Trans. Electron. Dev., Vol ED-32, 2533 (1985).
`(44) R.B. Fair, ''Modeling of Dopant Diffusion During Rapid Thermal Annealing," J. Vac. Sci.
`Technology A4, 926 (1986).
`(45) R. B. Fair, M. L. Manda and J. J. Wortman, "The Diffusion of Antimony in Heavily Doped n-
`and p-type Silicon," J. Mates. Res., 1,705 -717 (1986).
`(46) J. C. C. Tsai, D. G. Schimmel, R. B. Fair and W. Maszara, "Point Defect Generation During
`Phosphorus Diffusion in Silicon-1. Concentrations Above Solid Solubility," J. Electrochem. Soc.,
`.134, 1508 (1987).
`(47) R. Subrahmanyan, H. Z. Massoud and R. B. Fair, "The Influence of HCl on the Oxidation -
`Enhanced Diffusion of Boron and Arsenic in Silicon," J. Appl. Phys., 61, 4804 (1987).
`(48) J. C. Tsai, D. G. Schimmel, R. E. Ahrens and R. B. Fair, "Point Defect Generation During
`Phosphorus Diffusion in Silicon II. Concentrations below Solid Solubility, Ion-Implanted
`Phosphorus," J. Electrochem. Soc., 134, 2348 (1987).
`(49) R. B. Fair, "Reply to Comments of F. F. Morehead," J. Mater. Res., 2, 539 (1987).
`(50) R. B. Fair, ."Low-Thermal Budget Process Modeling with the PREDICT Computer Program,"
`IEEE Trans. Electron. Dev., .35, 285 (1988).
`(51) A. C. Ajmera, G. A. Rozgonyi and R. B. Fair "Point Defect/Dopant Diffusion Considerations
`Following Preamorphization of Silicon via Si+ and Ge+ Implantation," Appl. Phys. Lett., 52 (10),
`813 (1988).
`(52) R.B. Fair and J.E. Rose, "Process Simulation of Submicron Technologies" Semicond. Int.,13,
`72, (1987).
`(53) M. C. Ozturk, J. J. Wortman and R. B. Fair,."Very Shallow P+n Junction Formation by Low
`Energy BF2+ Ion Implantation into Crystalline and Germanium Preamorphized Silicon," Appl.
`Phys. Lett., 52 (12), 963 (1988).
`(54) R. Subrahmanyan, H. Z. Massoud and R. B. Fair, "Experimental Characterization of Two-
`Dimensional Dopant Profiles in Silicon Using Chemical Staining," Appl. Phys. Lett., 52 (25), 2145
`(1988).
`(55) Y. Kim, H.Z. Massoud and R.B. Fair, "Boron Profile Changes During Low-Temperature
`Annealing of BF2+-implanted Silicon," Appl. Phys. Lett., .53, 2197 (1988).
`(56) Y. Kim, H.Z. Massoud and R.B. Fair, "The Effect of Ion-Implantation Damage on Dopant
`Diffusion in Silicon During Shallow-Junction Formation," J. Electronic Mater., 18, 143 (1989).
`(57) R.B. Fair, "The Role of Transient Damage Annealing in Shallow Junction Formation,"
`Nuclear Instr. and Methods, B37/38, 371 (1989).
`(58) W.B. Rogers, H.Z. Massoud, R.B. Fair, U.M. Gosele, T.Y. Tan and G.A. Rozgonyi, "The
`Role of Silicon Self-Interstitials Supersaturation in the Retardation of Oxygen Precipitation in
`Czochralski Silicon," J. Appl. Phys., 65, 4215-4219 (1989).
`(59) R.B. Fair, "Point Defect Charge-State Effects on Transient Diffusion of Dopants in Si," J.
`Electrochem. Soc., 137, 667 (1990).
`(60) R.B. Fair and G.A. Ruggles, "Thermal Budget Issues for Deep Submicron ULSI," Solid State
`Tech., .33, 107 (1990).
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`(61) R.B. Fair, "Damage Removal/Dopant Diffusion Tradeoffs in Ultra-Shallow Implanted p+-n
`Junctions," IEEE Trans. Electron Dev., vol 37, 2237 (1990).
`(62) Y. Kim, H.Z. Massoud and R.B. Fair, "The Effect of Annealing Ambient on Dopant Diffusion
`in Silicon during Low Temperature Processing, J. Electrochem. Soc. 137, 2599-2603 (1990).
`(63) R.B. Fair (Invited), "Challenges to Manufacturing Submicron, Ultra-Large Scale Integrated
`Circuits," Proc. IEEE, .78, pp. 1687-1705, Nov. 1990.
`(64) R. Subrahmanyan, H.Z. Massoud and R.B. Fair, "Comparison of Measured and Simulated
`Two Dimensional Profiles in Si," J. Electrochem Soc., 137, 1573 (1990).
`(65) R.B. Fair, C.L. Gardner, M.J. Johnson, S.W. Kenkel, D.J. Rose, J.E. Rose and R.
`Subrahmanyan, "Two-Dimensional Process Simulation Using Verified Phenomenological
`Models," IEEE Trans. Computer-Aided Design, vol. 10, p. 643 (1991).
`(66) M.R. Mirabedini, S.H. Goodwin-Johansson, H.Z. Massoud and R.B. Fair, "Subquarter-
`micrometer Elevated Source and Drain MOSFET Structure using Polysilicon Spacers," Electronic
`Lett., 30, 1631 (1994).
`(67) R.B. Fair and R.A. Gafiteanu, "Modeling Boron Difusion in Thin Oxide p+ Si Gate
`Technology," IEEE Electron Dev. Lett., 17, 497-499 (1996).
`(68) R.B. Fair, "Oxide Thickness Effect on Boron Diffusion in Thin Oxide p+ Si Gate
`Technology," IEEE Electron Dev. Lett., 17, 242 (1996).
`[69] R.B. Fair, "Physical Models of Boron Diffusion in Ultrathin Gate Oxides," J. Electrochem.
`Soc., 144, 708 (1997).
`(70) R.B. Fair, "Modeling Boron Diffusion in Ultrathin Nitrided Oxide p+ Si Gate Technology,"
`IEEE Electron Dev. Lett., 18, 244 (1997).
`(71) G. Chen, T. Borca-Tasciuc, and R.B. Fair, "Photon Effect on Radiative Properties of Silicon
`During Rapid Thermal Processing," J. Appl. Phys. 82, 830 (1997).
`[72] R.B. Fair, "History of Some Early Developments in Ion Implantation Technology
`Leading to Silicon Transistor Manufacturing," Proc. of IEEE, 86, 111 (1998).
`(73) R.B. Fair and S. Li, "Photonic Effects in the Deactivation of Ion Implanted Arsenic," J. Appl.
`Phys., 83, 4081 (1998).
`(74) N. Vasudevan, R.B. Fair, and H.Z. Massoud, "Energy Considerations During the Growth of a
`Molten Filament in Metal-to-metal Amorphous-silicon Antifuses," J. Appl. Phys., 84, 4979 (1998).
`(75) T.W. Tsuei, R.L. Wood, C.K. Malek, M.M. Donnelly, and R. B. Fair, "Tapered Microvalves
`Fabricated by Off-axis X-ray Exposures," Microsystem Technologies, 4, 201 (1998).
`(76) N. Vasudevan, R.B. Fair, and H.Z. Massoud, "ON-state Reliability of Amorphous-silicon
`Antifuses, J. Appl. Phys., 84, 6440 (1998).
`(77) N. Vasudevan, H.Z. Massoud, and R.B. Fair, "A Thermal Model for the Initiation of
`Programming in Metal-to-Metal Amorphous-Silicon Antifuses," J. Electrochem. Soc., 146, 1536-
`1539 (1999).
`(78) R.B. Fair, "Anomalous B Penetration Through Ultrathin Gate Oxides During Rapid Thermal
`Annealing," IEEE Electron Dev. Lett., 20, 466 (1999).
`(79) Y. Wu, H. Niimi, H. Yang, G. Lucovsky, and R.B. Fair, "Suppression of Boron Transport Out
`of p+ Polycrystalline Silicon at Polycrystalline Silicon Dielectric Interfaces," J. Vac. Sci. Technol.
`B, 17(4), 1813-1822 (1999).
`(80) T. Zhang, A. Dewey, and R.B. Fair, "A Heirarchical Approach to Stochastic Discrete and
`Continuous Performance Simulation Using Composable Software Components," J.
`Microelectronics, 31 (1999).
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`(81) M.G. Pollack, R.B. Fair, and A.D. Shenderov, "Electrowetting-Based Actuation of Liquid
`Droplets for Microfluidic Applications," Appl. Phys. Lett., 77, 1725 (2000).
`(82) T. Zhang, F. Cao, A. Dewey, R.B. Fair, and K. Chakrabarty, "Performance Analysis of
`Microelectrofluidic Systems Using Hierarchical Modeling and Simulation," IEEE Trans.
`Circuits and Systems II: Analog and Digital Processing, vol. 48, 482 (2001).
`(83) J. Ding, K. Chakrabarty and R. B. Fair, "Scheduling of Microfluidic Operations for
`Reconfigurable Two-Dimensional Electrowetting Arrays", IEEE Transactions on Computer-
`Aided Design of Integrated Circuits & Systems, 29, 1463-1468 (2001).
`T. Zhang, K. Chakrabarty and R. B. Fair, "Design of Reconfigurable Composite
`(84)
`Microsystems Based on Hardware/Software Co-design Principles,” IEEE Transactions on
`Computer Aided Design of Integrated Circuits and Systems, 21, 987 (2002).
`(85) M.G. Pollack, A.D. Shenderov, and R.B. Fair, “Electrowetting-based Actuation of Droplets
`for Integrated Microfluidics,” Lab on a Chip, vol. 2, pp. 96-101, 2002.
`(86)
`T. Zhang, K. Chakrabarty and R. B. Fair, "Integrated hierarchical design of
`microelectrofluidic systems using SystemC", Microelectronics Journal, vol. 33, pp. 459-470, May
`2002.
`(87) Hong Ren, Richard B. Fair, Michael G. Pollack and Edward J. Shaughnessy, “Dynamics of
`Electro-wetting Droplet Transport, Sensors and Actuators B: Chemical, Volume 87, Issue 1, 15
`November 2002, Pages 201-206.
`(88)
`P. Paik, V.K. Pamula, M.G. Pollack, and R.B. Fair, “Electrowetting-Based Droplet Mixers
`for Microfluidic Systems,” Lab on a Chip, vol. 3, pp.28-33 (2003).
`(89) H. Ren, R.B. Fair, and M. Pollack, “Automated On-Chip Droplet Dispensing with Volume
`Control by Electrowetting Actuation and Capacitance Metering”, Sensors and Actuators B, 98,
`319-327 (2004).
`(90)
`P. Paik, V.K. Pamula, and R.B. Fair, “Rapid Droplet Mixers for Digital Microfluidic
`Systems,” Lab, on a Chip, vol. 3, pp.253-259 (2003).
`(91) V. Srinivasan, V.K. Pamula, and R.B. Fair, “Droplet-based microfluidic lab-on-a-chip for
`glucose detection,” Analytica Chimica Acta, Vol. 507, 145-150 (2004).
`(92)
`T. Zhang, K. Chakrabarty, and R.B. Fair, “Behavioral Modeling and Performance
`Evaluation of Microfluidics-Based PCR Systems Using System C”, IEEE Trans, Computer-Aided
`Design of Integrated Cir. And Sys., vol. 23, 843 (2004).
`(93) V. Srinivasan, V.K. Pamula, and R.B. Fair, “An Integrated Digital Microfluidic Lab-on-a-
`Chip for Clinical Diagnostics on Human Physiological Fluids,” Lab-On-A-Chip, 4, 310 (2004).
`(94)
`F. Su, K. Chakrabarty, and R.B. Fair, “Microfluidics-Based Biochips: Technology Issues,
`Implementation Platforms, and Design Automation Challenges,” IEEE Trans. Computer-Aided
`Des. Of Integ. Cir. And Sys., vol. 25, pp. 211-223 (2006).
`R.B. Fair, “Digital Microfluidics: is a true lab-on-a-chip possible?” J. Microfluidics and
`(95)
`Nanofluidics, 2007. (Invited)
`(96) R.B. Fair, A. Khylstov, T.D. Tailor, V. Ivanov, R.D. Evans, V.Srinivasan, V.K. Pamula,
`M.G. Pollack, P.B. Griffin, J. Zhou, “Chemical and Biological Applications of Digital Microfluidic
`Devices,” IEEE Design and Test of Computers, 24, No. 1, pp.10-24, Jan-Feb (2007). (Invited)
`
`REFEREED CONFERENCE PROCEEDINGS
`
`(1) A. B. El-Kareh, R. B. Fair and C. R. Marsh, "A Machine-Scan Electron Beam Device," Proc.
`8th Electron and Laser Beam Symp., p. 331 (1966).
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`(2) R. B. Fair,"Quantitative Theory of Retarded Base Diffusion in Silicon NPN Structures with
`Arsenic Emitters," 1972 IEDM Tech. Dig., p. 96 (1972).
`(3) R. B. Fair, "Recent Advances in Implantation and Device Modeling for the Design and Process
`Control of Bipolar ICs, in Semiconductor Silicon 1977, Eds. H. R. Huff and E. Sirtl, pp. 968-987,
`(The Electrochemical Soc.) 1977.
`(4) R. B. Fair, "Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon," "Proc. of
`Laser and Electron Beam Processing of Electronic Materials," (Ed. by C. L. Anderson, G. K.
`Celler, G. A. Rozgonyi, The Electrochem. Soc., Princeton) p. 204.
`(5) R. B. Fair and R. C. Sun, "Threshold Voltage Instability in MOSFET's Due to Channel Hot
`Hole Emission," in Tech. Digest of the Inter. Electron Device Meeting, p. 746 (1980).
`(6) R. B. Fair, "Modeling Anomalous Phenomena in Arsenic Diffusion in Silicon," in
`Semiconductor Silicon/1981. Eds. H. R. Huff, R. J. Krogler and Y. Takeishi. (The Electronic
`Society, Inc., Pennington, N.J., 1981) p.963.
`(7) R. B. Fair and W. G. Meyer, "Anomalous Junctions Formed by Cross-contamination of
`Phosphorus During Arsenic Implantation in Silicon," in Silicon Processing, ASTM STP804, D.C.
`Gupta, Ed., American Society for Test and Mater., 1983, pp. 290-305.
`(8) R. B. Fair, "Impurity Concentration Doping Effects on Impurity Diffusion in Silicon,"
`Semiconductor Processing and Equipment Sym. Tech. Proc., p. 230 (1983).
`(9) R. B. Fair, "Modeling of Dopant Diffusion and Associated Effects in Silicon" in Defects in
`Semiconductors II, Mat. Res. Soc. Symp. Proc. Vol. 14 (Elsevier, Amsterdam), pp.\ 61-74 (1983).
`(10) R. B. Fair, "MCNC - A New Multi-Institutional Thrust in ManufacturingTechnology,"
`Proceedings UGIM-83, IEEE, p. 10, 1983.
`(11) R. B. Fair, J. J. Wortman, J. Liu, "Modeling Rapid Thermal Annealing Processes for Shallow
`Junction Formation in Silicon," 1983 IEDM Tech. Dig., pp. 658-661 (1983).
`(12) B. Rogers, R. B. Fair, W. Dyson and G. A. Rozgonyi, "Computer Simulation of Oxygen
`Precipitation and Denuded Zone Formation," in VLSI Science and Technology 1984, Proceedings
`of the 2nd International Symposium on VLSI Science and Technology, Vol. 84-7 (The
`Electrochemical Society, Pennington, NJ) pp. 74- 84 (1984).
`(13) R. B. Fair, "Observations of Vacancies and Self-Interstitials in Diffusion Experiments in
`Silicon," in Thirteenth Inter. Conf. on Defects in Semiconductors, Vol. 14a (Metallurgical Soc.,
`Warrendale, PA.) ed. L. C. Kimberling and J. M. Parsey, pp. 173-185 (1984).
`(14) R.B. Fair and R. Subrahmanyan, "PREDICT-A New Design Tool for Shallow Junction
`Processes," Proc., Adv. Applications of Ion Implantation, Vol. 530 (The Inter. Society for Optical
`Engineering, Bellingham, WA) ed. M.I. Current and D. K. Sadana, pp. 88-96 (1985).
`(15) R. B. Fair and J. E. Rose, "A deep Decision Tree Approach to Modeling Submicron Silicon
`Technologies," in ICCAD Dig. of Tech. Papers, (Computer Society Press, Los Angeles, CA), pp.
`248-251 (1987).
`(16) R. B. Fair, "Process Models for Ultra-Shallow Junction Technologies," IEDM Tech. Digest,
`pp. 260-263 (1987).
`(17) R.B. Fair, "The Role of Transient Damage Annealing in Shallow Junction Formation," Proc.
`Shanghai Workshop on Ion Implantation, Ed. Z. Shichang (Academia Seneca, Shanghai), 1989
`pp.12-22.
`(18) R.B. Fair, "Oxidation-induced Defects and Effects in Silicon During Low-Thermal-Budget
`Processing" in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, eds. C.R. Helms and
`B.E. Deal (Plenum, New York), 1989, pp.459-468.
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`(19) G.A. Ruggles, S.N. Hong, J.J. Wortman, M. Ozturk, E.R. Meyers, J.J. Hren and R.B. Fair, "A
`Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon," in Mat. Res.
`Symp. Proc.,vol. 128 (Mat. Res. Soc., Pittsburgh, 1989), p. 611.
`(20) R. Subrahmanyan, H.Z. Massoud and R.B. Fair, "Accurate Junction-Depth Measurements
`Using Chemical Staining," in Semiconductor Fabrication: Technology and Metrology ASTM STP
`990, D.C. Gupta, ed. (Am. Soc. for Testing and Materials, 1989), p. 126.
`(21) R.B. Fair, "The Role of Transient Damage Annealing in Shallow Junction Formation," Proc.
`First Inter Symp. on Adv. Materials for ULSI, vol 88-19, M. Scott, Y. Akasaka and R. Reif, eds.
`(The Electrochem. Soc., Pennington, N.J., 1988) pp. 123-135.
`(22) R.B. Fair and R. Subrahmanyan, "Phenomenological Versus Point-Defect-Based Process
`Modeling-Where Should You Put Your Money?, in Proc. 2nd Inter. Symp. on ULSI Science
`andTech., vol. 89-9, C.M. Osburn and J.M. Andrews, eds. (The Electrochem. Soc. Pennington,
`N.J., 1989) pp, 133-143.
`(23) R.B. Fair, "Shallow Junctions-Modeling the Dominance of Point Defect Charge States During
`Transient Diffusion," IEDM Tech. Digest, pp. 691-693 (1989).
`(24) R.R. Ward, H.Z. Massoud and R.B. Fair, "The Thermal Oxidation of Heavily Doped Silicon
`in the Thin-Film Regime: Dopant Behavior and Modeling Growth Kinetics," in Semiconductor
`Silicon 1990, Proceedings of the Sixth Inter. Symp. on Si Mater. Sci. and Tech., Eds. H.R. Huff,
`K.G. Barraclough and J. Chikawa, Vol. 90-7 (The Electrochem. Soc., Pennington) pp. 405-416,
`1990.
`(25) R.B. Fair, "Process Model for Simulating the Effect of Amorphizing Implants on Phosphorus
`Diffusion," ibid, pp. 429-436, 1990.
`(26) Y. Kim, H.Z. Massoud, S. Chevacharoeukul and R.B. Fair, "The Role of End-of-Range
`Dislocation Loops as a Diffusion Barrier," ibid, pp. 437-446, 1990.
`(27) Y. Kim, H.Z. Massoud, U.M. Gosele, and R. B. Fair, "Physical Modeling of the Time
`Constant of Transient Enhancement in the Diffusion of Ion-Implanted Dopants in Silicon," in
`Process Physics and Modeling in Semiconductor Technology, Proceedings of the 2nd International
`Sym., Eds. G.R. Srinivasan, J.D. Plummer and S.T. Pantelides, vol. 91-4 (The
`Electrochem Soc. Inc., Pennington) pp. 254-272 (1991).
`(28) Y. Kim, Y.T. Tan, H.Z. Massoud and R.B. Fair, "Modeling the Enhanced Diffusion of
`Implanted Boron in Silicon," ibid pp. 304-320 (1991).
`(29) R.B. Fair, "Challenges and Priorities for Two Dimensional Process Simulation," ibid, pp. 689-
`702 (1991).
`(30) R.B. Fair and I. Turlik, "Proof-of-Concept Collaboration Model for Advanced Packaging
`Research at MCNC", 1993 Proceedings, International Conference on Multichip Modules, p.552
`(1993).
`(31) R.B. Fair, "Junction Formation in Silicon by RTA," in 1st International Rapid Thermal
`Processing Conference - RTP'93", Ed. R.B. Fair and B. Lojek, RTP'93, Phoenix , p. 174 (1993).
`(32) M.R. Neuman, R.B. Fair, M. Mehregany and H.Z. Massoud,
`Micro-electromechanical Systems: A New Technology for Biomedical Applications," in Proc. of
`the 15th Annual Intern. Conf. of the IEEE Engineering in Medicine and Biology Society, A.Y.J.
`Szeto and R.M. Rangayyan, eds. IEEE Cat. No. 93CH3339-9, Piscataway, N.J., 15, 1545
`(1993).
`(33) R. B. Fair, "Prospects for Ion Implantation in Scaled Devices," in Proceedings of Inter. Conf.
`on Adv. Microelectronic Devices and Processing, Eds. S. Ono, T. Ohmi and Y. Sawada, Sendai,
`p.689 (1994).
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`(34) R.B. Fair. "Physically Based Modeling of Boron Diffusion in Thin Gate Oxides: Effects of F,
`H2, N, Oxide Thickness and Injected Si Interstitials," IEDM Tech Digest, p.85, December, 1995.
`(35) R.B. Fair. " Rapid Thermal Annealing Issues in Silicon Processing" in Transient Thermal
`Processing Techniques in Electronic Materials, Eds. N.M. Ravindra and R.K. Singh, (The
`Minerals, Metals and Materials Society, Warrendale, Pa.) p. 91 (1996).
`(36) R.B. Fair and W. Richards, "Process Simulation of Dopant Atom Diffusion in SiO2," in
`Process Physics and Modeling in Semiconductor Technology, eds. G.R. Srinivasan, C.S. Murthy,
`and S.T. Dunham, vol 96-4 (The Electrochemical Society, Pennington, NJ) pp. 179-194 (1996).
`(37) R.B. Fair, "Boron Diffusion in Ultrathin Silicon Dioxide Layers," in The Physics and
`Chemistry of SiO2 and the Si-SiO2 Interface -3, eds. H.Z. Massoud, E.H. Poindexter, and C.R.
`Helms, vol. 96-1, (The Electrochemical Society, Pennington, NJ) pp. 200-213 (1996).
`(38) G. Chen, T. Borca-Tasciuc, and R. B. Fair. "Fundamental Limit of the Use of Pyrometry in
`Rapid Thermal Processing," in 4th International Conference on Advanced Thermal Procesing of
`Semiconductors, eds. R.B. Fair, M.L. Green, B. Lojek, and R.P.S Thakur, p. 157 (1996)
`[39] R.B. Fair, "Trends in Rapid Thermal Processing for Large Diameter Silicon Processes," in
`Proceedings of 2nd International Symp. on Advanced Science and Technology of Silicon
`Materials, ed. M. Umeno, Japan Soc. for Promotion of Science, pp. 7-15 (1996).
`[40] S. Bobbio, S. Goodwin-Johansson, T. DuBois, F. Tranjan, S. Smith, R. Fair, C. Ball, J.
`Jacobson, C. Bartlett, N. Eleyan, H. Makki, and R. Gupta, "Integrated force array: positioning
`drive applications", Proc SPIE Symp,
`3046, 248-254 (1997).
`[41] R.B. Fair and M. Shen, "Ultrashallow 2D Dopant Profile Simulation Versus Experimental
`Measurement in the Low Thermal Budget Regime," Proceedings of Fourth International Workshop
`on Measurement, Characterization and Modeling of Ultra-shallow Doping Profiles in
`Semiconductors, Research Triangle Park, NC, April, 1997 pp. 3.1 - 3.9
`[42] R.B. Fair, "Boron Penetration of Thin Polysilicon Gates/Ultrathin Gate Dielectrics from B+
`Implantation and Thermal Processing," in ULSI Science and Technology 1997, eds. H.Z. Massoud,
`H. Iwai, C. Claeys, and R.B. Fair (The Electrochemical Society, Pennington, NJ) vol. 97-3, 247-
`261 (1997).
`[43] R.B. Fair, V. Pamula, and M. Pollack, "MEMS-based Explosive Particle Detection and
`Remote Particle Stimulation," Proceedings of SPIE - Detection and Remediation Technologies for
`Mines and Minelike Targets II, vol. 3079, 671 (1997).
`[44] R.B. Fair, "Dopant Diffusion in Si and SiO2 during RTA," Extended Abstracts of
`International Conference on Solid State Devices and Materials, SSDM'97, Hamamatsu, Japan,
`Sept. 1997, p. 104.
`(45) R.B. Fair, M. Pollack, and V. Pamula, "MEMS Devices for Detecting the Presence of
`Explosive Material Residues in Mine Fields," SPIE Aerosense Conf., Orlando, vol. 3392, 409,
`April, 1998.
`(46) V.K. Pamula and R.B. Fair, "Detection of Nanogram Explosive Particles with a MEMS
`Sensor," Proceedings of SPIE, Detection and Remediation Technologies for Mines and Minelike
`Targets IV, vol. 3710, pp. 321-327 (1999).
`(47) A. Dewey and R.B. Fair, "Microelectromechanical Systems (MEMS) Design and Design
`Automation Research at Duke University," International Conf. Modeling and Simulation of
`Microsystems, April 1998.
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`(47a) V.K. Pamula and R.B. Fair, “ Detection of Dissolved TNT and DNT in Soil with a MEMS
`Explosive Particle Detector,” Proceedings of the SPIE - The International Society for Optical
`Engineering, v 4038, pt.1-2, 2000, p 547-52
`(48) T. Zhang, K. Chakrabarty, and R.B. Fair, "Design of Reconfigurable Composite
`Micro