(19) FRENCH REPUBLIC
`
`NATIONAL INSTITUTE
`FOR INDUSTRIAL PROPERTY
`PARIS
`
`(11) Publication No.:
`(To be used only when
`W 9
`P
`’
`(21) National Registration No.:
`
`2 554 302
`
`84 16445
`
`(51) Int. cl‘: H 05 H 1/46.
`
`(12)
`
`PATENT APPLICATION
`
`A1
`
`(22) Filing date: 26th October 1984.
`
`15' November 1983
`(30) Priority: DD,
`No. WP H 05 H/256 179.
`
`(71) App|icant(s): Company named: VEB
`CARL ZEISS JENA, Company under
`German law. — DD.
`
`(72) lnventor(s): Walther Gartner, Wolfgang
`Retschke and Klaus Gunther.
`
`(43) Date of publication of application:
`B,O.P.|. — "Patents" No. 18 of 3” May 1985.
`
`(73) Proprietor(s):
`
`(60) References to other related national
`documents:
`
`(74) Agent(s): Cabinet Madeuf, industrial
`property consultants.
`
`(54) Radiation source for optical devices, notably for photolithographic reproduction systems.
`
`
`
`J
`
`IIIcur
`
`
`
`
`.".:::;=r\\\~‘.@
`\\~s:~§\Vii?.y
`mm
`F-“J\‘§‘~\\X\
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`
`
`/3% V.\
`
` 3
`
`I
`
`(57) Radiation source for optical devices, notably
`for photolithographic reproduction systems,
`characterised in that a gas-tight chamber 1 filled
`with a discharge medium 2 comprises at least one
`entry aperture 3 and 4 which allows laser
`radiation to pass and at least one exit aperture 5
`which allows plasma radiation to pass and in that
`the production and maintenance of a radiation-
`emitting plasma in the discharge medium are
`ensured, in a known manner, by at least one laser
`situated outside the chamber 1, whereby optical
`means ensuring the focussing of the laser
`radiation in the discharge medium are mounted at
`an entry aperture, such that the plasma is situated
`at a certain distance from the wall of the chamber
`1 and that the plasma radiation exits the chamber
`via exit aperture 5.
`
`D
`
`Printed copies available for sale from the IMPRIMERIE NATIONALE (French National Press) — 75732 PARlS CEDEX 15
`
`ASML 1204
`ASML 1204
`
`FR2554302—A1
`
`

`
`‘I
`
`2554302
`
`The present invention relates to a radiation source for optical devices, in particular for
`
`photolithographic reproduction systems. it is preferably applied in cases where a radiated power
`
`is required which is greater than that from pressurised mercury vapour lamps, such as in
`
`photolithographic appliances for illuminating a photoresist layer on a semiconductor wafer.
`
`Currently, numerous radiation source systems are known which are used in scientific devices and
`
`of which the properties have been widely adapted to the conditions in the field of use. These
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`properties relate to the spectral distribution of the emission and to the obtainable radiation
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`density, as well as to the spatial and angular distribution of the produced radiation. Requirements
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`relating to spectral radiated powers which exceed the spectral radiated power of a black body
`
`above the melting point of solid bodies can only be satisfied through plasma. Plasmas are
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`obtained by heating an active medium, preferably by passing an electric current through it or by
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`the action of high-frequency electromagnetic fields. The achievable spectral radiation densities
`
`are upwardly limited by the maximum value of the harnessable electrical power per volume unit
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`which can be thermally withstood by the constitutent materials of the electrodes and walls. in the
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`case of high—frequency heating, limitation due to electrode loading no longer occurs, but the
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`problem of the spatial concentration of the high—frequency energy does arise.
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`lfthe stationary operation of the radiation source is dispensed with, an increase, by a fairly large
`
`order of magnitude, in the power harnessed can be obtained for a short time, since the
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`conversion of the fed-in power into radiation proceeds significantly faster than its transmission to
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`the walls and, if there are any, to the electrodes of the discharge cavity. However, even with this
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`mode of operation, alongside mechanical stresses due to the shock waves which, however, have
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`sufficient action only in unfavourable cases, the evaporation and erosion of the materials which
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`form the walls and electrodes contistute, when the radiation source must have a certain lifespan,
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`an impediment to the production of intense radiant flux. In this regard, it should be noted that in
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`the case of sources which operate in a stationary manner and in the case of sources which
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`operate by pulses, above a power level which is type—dependent and which is achieved
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`practically universally in the technical applications, any further increase in the radiated power is
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`obtained at the expense of a reduction in the lifespan.
`
`However, these short-lived radiation sources cannot be used for many applications because they
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`unreasonably increase the maintenance costs for the devices into which they are incorporated,
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`since changing a lamp generally entails complicated adjustment and long adaptation operations
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`2554302
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`of the optical transmission system to the specific radiant flux of the lamp in question. Within
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`certain limits, it is possible to increase the radiated power whilst retaining the overall charge of
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`the electrical energy invested in the radiation, for the desired wavelength and the preferred
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`spread width. This can be achieved by giving the active medium an optimal composition and by
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`creating optimal pressure and temperature conditions for the plasma during the production of the
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`radiation. However, consideration should be given to the limitations which arise from the existing
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`incompatibility, at working temperature, between various active media and the consituent
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`materials of the electrodes and the walls, such that, taking into account the withstand time of
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`these materials, discharge conditions which are far from optimal frequently have to be selected.
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`In the case of non—stationary operation, further limitations result from the fact that the radiation
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`source simultaneously has to fulfil the functions of an electrical heavy—duty switch and of a
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`converter of electrical energy into radiation. In this case too, the scope for optimising the radiation
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`production is restricted, because the safety of ignition and switching is linked to certain plasma
`states.
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`In the case of the stationary operation and in the case of pulsed operation, there are, in electrode
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`radiation devices, dead solid angles in which the radiation cannot be used, although the insertion
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`of suitable optical components, such as ellipsoidal reflectors and/or light-conducting fibres
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`theoretically make it possible to also use the areas formed by these angles and, as a result, to
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`provide the maximum amount of radiation energy to the optical system. To illuminate optical
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`systems used in photolithography microinstallations, lasers are also used as radiation sources
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`(SPIE Vol. 174 [1979], p.28...36, “Coherent illumination improves step-and—repeat printing on
`
`wafers” [Un éclairage coherent amél/‘ore I’impress/on “graduelle et répétée” surles galettes”], by
`
`Michel Lacombat et al.) The main limitations of these light sources result from their high spatial
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`coherence and the structural distortions which result therefrom, their high monochromy and the
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`effects of the resulting standing waves in photosensitive materials. Furthermore, generally, lasers
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`with high radiated power or favourable efficiency are generally not present in advantageous
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`spectral areas. The use of “excimer” lasers which emit the necessary energy in the desired
`
`wavelength region (UV region) are limited to contact—lithographic methods (SPlE Vol. 334 [1982],
`
`p.259...262, “Ultrafast high resolution Contact lithography using excimer laser" [“Lithographie par
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`Contact é forte résolution ultrarapide au moyen de laser excimef], by K. Jain et al.), because the
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`partial spatial coherence necessary for the illumination of projection—lithography systems cannot
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`be achieved to a degree as justified by its technical use.
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`2554302
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`The aim of the invention is to achieve a highly powerful radiation source which has a long
`
`lifespan and which makes it possible to include a substantial area of solid angles and precise
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`and fast illumination of photosensitive areas and which, as a result, ensures a high productivity
`
`in photolithographic installations. Therefore the invention is intended to make it possible to
`
`achieve a radiation source for optical devices, in particular for photolithographic reproduction
`
`systems, which uses plasma radiation. By a spatial separation between the plasma and the wall
`
`or other installations associated with a cavity and without use of electrodes mounted in the
`
`cavity nor high—frequency fields for spatial concentration of the energy, it must make it possible
`
`to obtain a long lifespan and high power density. Furthermore, there is a reduction of stresses
`
`on the cavity though shock waves when the radiation source is in pulsed operation, and there
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`are no dead solid angles due to electrodes or other installations in the cavity. The radiation
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`source according to the invention is intended to possess a wide scope for optimisation of the
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`radiation production in the desired wavelength region, because the active media and pressure
`
`and temperature conditions must be selected regardless of the compatibility with the materials
`
`which the electrodes are made of. With regard to the laser radiation, the radiation source has
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`the advantage that, especially in the case of photolithographic reproduction systems, it has a
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`significant partial spatial coherence and that its spectral structure is such that the effects of
`
`standing waves in the photosensitive material are attenuated.
`
`This aim is achieved, according to the invention, by the fact that a gas-tight chamber filled with a
`
`discharge medium contains at least one entry aperture which allows laser radiation to pass and at
`
`least one exit aperture which allows plasma radiation to pass, and that the production and
`
`maintenance of a radiation—emitting plasma in the discharge medium are ensured, in a known
`
`manner, by at least one laser situated outside the chamber, whereby optical means for focussing
`
`the laser radiation in the discharge medium are mounted at an entry aperture, such that the
`
`plasma is at a certain distance from the wall of the chamber and that the plasma radiation exits
`
`the chamber via the exit aperture.
`
`When the radiated power of a laser as supplied is not sufficient for a discharge in the discharge
`
`medium, it is advantageous that the device includes, to ignite the discharge medium, outside the
`
`chamber, at least one further pulse—operated laser which is directed by optical means to ensure
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`focussing of the same volume at an entry aperture.
`
`An advantageous variant, with regard to changing of position of the radiation—emitting plasma,
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`2554302
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`consists in placing the optical means which ensure the focussing of the laser radiation outside
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`the chamber. lt is then possible to advantageously arrange installations which make it possible
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`to adjust the optical means which ensure the focussing of the laser radiation.
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`it is possible to advantageously simplify the realisation of the radiation source by placing optical
`
`means which ensure the focussing of the laser radiation inside and/or on the surface of the
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`chamber. In these conditions, the inner wall of the chamber constitutes an optical means for
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`focussing the radiation coming from outside. To include as large an area of dead solid angles as
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`possible, it is advantageous to give the inner wall of the chamber a shape such that it
`
`constitutes an optical means for ensuring the reflection of the radiation coming from the plasma.
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`It is therefore advantageous for the inner wall of the chamber to have the shape of a convex
`
`mirror or an ellipsoidal mirror.
`
`To obtain high power densities and to increase the lifespan, it is advantageous to provide the
`
`chamber with an external cooling system.
`
`Various other characteristics of the invention further emerge from the following detailed
`
`description.
`
`Embodiments of the subject of the invention are shown, by way of non—limiting examples, in the
`
`attached drawings.
`
`Fig. 1 schematically shows an embodiment of the radiation source according to the invention.
`
`Fig. 2 shows an exemplary embodiment in which the inner wall of the chamber has a shape
`
`such that it constitutes an optical element.
`
`Fig. 3 and 4 show embodiments wherein the discharge chamber has the shape of an
`
`ellipsoidal reflector.
`
`Fig. 1 schematically shows an embodiment of the radiation source according to the invention in
`
`which a gas~tight chamber 1 contains the discharge medium 2. The chamber 1 includes two
`
`entry apertures 3 and 4 which allows laser radiation to pass and an exit aperture 5 which allows
`
`plasma radiation to pass. The entry aperture 3 is sealed by the window 6 which allows infrared
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`5
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`2554302
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`to pass, and the entry aperture 4 is sealed by the lens 7 which allows ultraviolet to pass. The
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`exit aperture 5 is provided with a window 8. The device includes two lasers 9 and 10 outside the
`
`chamber 1. The coherent radiation 11 from the laser 9, which is a stationary CO2 gas laser,
`
`penetrates into the chamber 1 through the window 6 and is focussed by the concave mirror 12
`
`mounted on the wall of the chamber. The radiation 13 from the laser 10, which is a nitrogen
`
`pulse laser, is focussed on the same point by the lens 7 which allows ultraviolet to pass and
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`produces an electrical discharge there, and as a result an absorbent plasma 14 which is heated
`
`to high temperatures under the influence of the radiation 11. The radiation 15 from the plasma
`
`can be fed into the downstream optical system through the window 8.
`
`lfthe radiation source is meant to be pulse-operated, the continuous laser 9 is replaced by a
`
`pulsed CO2 carbon dioxide laser. As a rule, it is possible to dispense with the pulsed laser 10,
`
`because the field strength of the pulsed CO2 carbon dioxide laser is in many cases sufficient to
`
`bring about the discharge. With such a device, it is possible to obtain, near-ellipsoidal plasmas
`
`from 4 mm to 5 mm in diameter up to a temperature of 16000 K, for example in an argon or
`
`xenon atmosphere as active medium with a working pressure of 106 Pa. The optical depth and
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`the temperature can be varied within a vast range by altering the pressure. As the pressure
`
`increases, the temperature falls and the spectral distribution approaches Planck’s function. As
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`pressure decreases, the temperature increases, and the emission becomes linear.
`
`Temperatures far in excess of 20000 K can be reached by using, as active medium, helium
`
`which in conventional pulsed light sources, operating electrically, can no longer be used
`
`practically clue to the heavy wear and tear on the electrodes. in these conditions, the density of
`
`radiation and its spectral distribution can be altered in a much wider range than in the case of
`conventional radiation sources.
`
`Figure 2 shows an embodiment in which the inner wall of the chamber constitutes, by its shape,
`
`an optical element. A casing 16, the concave mirror 17 and the quartz window 18 constitute the
`
`gas—tight chamber containing the discharge medium 19. The coherent radiation 20 from a
`
`pulsed CO2 carbon dioxide laser 21 is focussed by the lens 22 which lets infrared pass and
`
`penetrates the chamber via the window 23 which allows infrared to pass. The pulsed laser 21 is
`
`mounted displaceably in the X direction, 24, and in the Y direction, 25, and the lens for infrared
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`22 can be displaced in the X direction, 24, and in the Y direction, 25, and in the Z direction, 26.
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`Accordingly, the position of the focal point, which corresponds to the position of the plasma 27,
`
`may be adjusted relative to the optical axis 28. The plasma radiation 27 is sent directly, and by
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`2554302
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`means of the concave mirror 17, through the quartz window 18 to the condenser lens 29 of the
`
`optical system placed downstream.
`
`The gas—tight chamber is surrounded by a container 30. The free space 31 which they demarcate
`
`is traversed by a refrigerating means 32 which enters, via the tube 33, and exits via the tube 34
`
`and evacuates the heat produced by the pulsed laser radiation 21 and plasma radiation 27. It is
`
`possible to dispense with the quartz window 18 if the condenser lens 29 is installed instead.
`
`Figs. 3 and 4 show embodiments wherein the discharge chambers 35 and 36 are constituted by
`
`ellipsoidal reflectors. The radiation 37 from the carbon dioxide (CO2) laser 38 is focussed by the
`
`focussing elements, a concave mirror 39 or a lens 40 which allows infrared to pass, onto focal
`
`points 41 and 42 of the ellipsoid formed by the reflecting layers of the ellipsoidal mirror 43 and 44.
`
`The light emitted by the plasma producing the radiation is concentrated by the ellipsoidal mirror
`
`onto the second focal point 45 or 46 of the ellipsoid. The plasma formed at these focal points 45,
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`46 serves as a source of secondary radiation for the optical system situated downstream and
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`starting at the condenser lenses 47, 48.
`
`

`
`7
`
`Claims
`
`2554302
`
`A radiation source for optical devices, in particular for photolithographic reproduction
`
`systems, characterised in that a gas—tight chamber (1) filled with a discharge medium (2)
`
`contains at least one entry aperture (3 and 4) which allows laser radiation to pass and at
`
`least one exit aperture (5) which allows plasma radiation to pass, and that the production
`
`and maintenance of a radiation—emitting plasma in the discharge medium are ensured, in a
`
`known manner, by at least one laser situated outside the chamber (1), whereby optical
`
`means for focussing the laser radiation in the discharge medium are mounted at an entry
`
`aperture, such that the plasma is at a certain distance from the wall of the chamber (1) and
`
`that the plasma radiation exits the chamber via the exit aperture (5).
`
`The radiation source according to claim 1, characterised in that the ignition of the
`
`discharge medium is ensured outside the chamber (1) by at least one further pulse-
`
`operated laser (10) which is directed by optical means (7) to focus it on the same volume
`
`after passing in an entry aperture (4).
`
`The radiation source according to one of claims 1 or 2, characterised in that the optical
`
`means (22) which ensure the focussing of the laser radiation (21) are situated outside the
`
`chamber (19).
`
`The radiation source according to claim 3, characterised in that the installation
`
`includes devices for adjusting the optical means which ensure the focussing of the
`laser radiation.
`
`The radiation source according to one of claims 1 or 2, characterised in that optical
`
`means which ensure the focussing of the laser radiation are placed inside and/or on the
`wall of the chamber.
`
`The radiation source according to claim 5, characterised in that the inner wall of the
`
`chamber has a shape such that it constitutes an optical means for focussing the
`
`laser radiation coming from outside.
`
`The radiation source according to claim 1, characterised in that the inner wall of the
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`8
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`2554302
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`chamber has a shape such that it constitutes an optical means for reflecting the radiation
`
`emitted by the plasma.
`
`The radiation source according to claim 7, characterised in that the inner wall of the
`
`chamber partially has the shape of a concave mirror or an ellipsoidal mirror (43, 44).
`
`The radiation source according to claim 1, characterised in that the chamber is equipped
`
`with an external cooling system (31, 32, 33, 34).
`
`

`
`FR 2 554 302
`
`i. James MCGHJ, of Murgétroyd & Company, Scotiard House? 165-169 Scotiand Street,
`
`Gtasgow C35 8531., hereby declare that 3 am the translator of the document attached and
`
`certify that the foilowing is a true transiation to the best of my knowledge and beiief.
`
`
` ................................. A» Dated {his 15th of December 2034
`
`

`
`@
`
`REPUBUQUE FRANCAISE
`
`INSTITUT NATIONAL
`DE LA PROPRléT§ INDUSTRIELLE
`
`PARIS
`
`W de publication :
`(Q n‘uz':IEser qua pour Ies
`commandos de reproduction)
`
`2 554 302
`
`N” rfenregistrement national :
`
`84 16445
`
`Int Cl‘ : H 05 H1/46.
`
`@
`
`DEMANDE DE BREVET IYINVENTION
`
`A1
`
`E/EB CARL ZE/SS
`@ Data de dépét : 26 octobre 1984. Dernandeuris) : Entreprise dire:
`
`JENA, Entreprise de draft allemand. — DD.
`1 983.
`Priorité : DD.
`1”’ novérnbre
`n° WP H 05 H/256179.
`
`
`
`
`
`lnventeur(s) : Walter Gértner, Wolfgang Retschke et
`Kiaus Gfinther.
`
`@ Date de la mise é disposition du public de la
`demands : BOP! rfirevetsx n° 18 du 3 mai 1985.
`
`Références é d’autres documents nationaux appa-
`rentés:
`‘
`
`fituiairets) :
`
`
`
`Mandataireis) : Cabinet Madeuf. Conseils en propriété
`industrielle.
`’
`
`Source de rayonnement pour appareiis d'optique. notammant pour systémes de reproduction par photolithographie.
`
`@ Source de rayonnement pour appareils dioptique, racism-
`rnent pour systémes de reproduction photolithographique, ca-
`ractérisée en ce qu‘une enceinte 1 étanche aux gaz remplie
`par un milieu de décharge 2 cornpnrte au moins une ouverture
`d'entrée 3 et 4 laissant passer un rayonnement Saser at au
`moins une ouverture de sortie 5 Iaissant passer un rayonne-
`ment de plasma et en ce que la production et Fentretien d'un
`plasma émettant un rayonnement dans la milieu de décharge
`son: assurés, d’une maniére connue, par au moins an Jaser
`situé 8 Vextérieur de fenceinte 1. des moyens optiques assu»
`rant
`la, focalisation du rayonnement
`laser dans le milieu de
`décharge étant montés au niveau d’une ouverture d’entrée, de
`sorta que le plasma se trouve 2‘: une certaine distance de la
`paroi de Yenceinte 1 et que Ie rayonnement du plasma sort de
`Fenceinte par Youvermre de sortie 5.
`
` D
`
`Vents dos fascicuies é VIMPWMERIE NATIONALS, 27, we de 13 Convention — 75732 PARIS CEDEX 15
`
`FR2554302—A1
`
`10
`
`

`
`2554302
`1
`La presents invention est relative a une source
`
`de rayonnement pour appareils d’optique, notamment pour
`
`systemes de reproduction par photolithographie. Elle s'ap—
`
`plique de préférence dans les cas oh il faut une puissance
`
`fie rayonnement supérieure a celle des lampes a vapeur de
`
`mercure sous pression, par exemple dans les installations
`
`de photolithographie, pour l'éc1airement d’une couche
`
`de vernis photo sur une plaque de semi—conducteur.
`
`On connait actuellement de nomhreux systémes de
`
`sources de rayonnement qui sont utilises dans des appareils
`
`scientifiques et dont les propriétés ont été largement
`
`adaptées aux conditions inhérentes an domaine d'utilisation.
`Ces propriétés sont relatives a la répartition spectrale
`
`de l'émission et A la densité de rayonnement susceptible
`
`d‘étre obtenue ainsi qu'a la répartition spatiale et
`
`angulaire an rayonnement produit. Les exigences relatives
`
`a des puissances de rayonnement dépassant la puissance
`
`do rayonnement spectrale d‘un corps noir au-dessus du
`
`point de fusion des corps solides ne peuvent étfe satis-
`
`faites que par du plasma. Les plasmas s‘obtiennent par
`
`chauffage d'un milieu actif, de préférence par passage
`d'un courant électrique ou par action de champs électro*
`
`magnétiques de haute fréquence. Les densités de rayonnement
`
`spectrales susceptibles d'étre atteintes sont limitées
`
`vers le haut par la valeur maximale de la puissance é1ec~
`
`trique, pouvant étre mise en jet par unité de volume, a
`
`laquelle les matériaux constituant les électrodes et les
`
`parois peuvent résister thermiquement. Dans le cas du
`
`chauffage a haute fréquence, il n'y a plus de limitation
`
`due a la charge des électrodes, mais le problems qui se
`
`pose alors est celui de la concentration spatiale de
`l‘énergie de haute fréquence.
`Si l'on renonce a un fonctionnement stationnaire
`
`de la source de raycnnement, on peut obtenir, pendant un
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`S
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`temps court, une augmentation, d‘un ordre de grandeur assez
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`2554302
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`important, de la puissance mise en jeu, du fait que la
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`transformation en rayonnement de la puissance fournie
`
`s'effectue beaucoup plus rapidement que sa transmission
`
`aux parois et, s'i1 y en a, aux électrodes de la cavité
`
`de décharge. Cependant, meme avec ce mode de fonctionnement,
`
`a coté des charges mécaniques dues aux ondes de choc
`
`qui, cependant, n'ont une action suffisante que dans
`
`des cas défavorables, la vaporisation at l'érosion des
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`matériaux qui formant les parois et les électrodes cons-
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`tituent, lorsque la source de rayonnement doit avoir une
`
`certaine durée de vie, un obstacle a la production de
`
`flux de rayonnement intense.
`
`I1 y a lien de remarquer
`
`a ce sujet que, dans le cas de sources ayant un fonction—
`
`nement stationnaire comme dans le cas de sources ayant
`
`un fonctionnement par impulsions, au-dessus d'un niveau
`
`de puissance qui dépend du type adopté et qui, dans les
`
`applications techniques, est pratiquement atteint partout,
`touts augmentation supplémentaire de la puissance de
`
`rayonnement s'obtient aux dépens de la diminution de
`la durée de vie.
`
`20
`
`Cependant, ces sources de rayonnement de courte
`
`durée sont inutilisables pour beaucoup d'applications, car
`
`elles augmentent d'une maniere inadmissible lea frais
`
`d'entretien des appareils auxquels elles sont incorporées,
`
`du fait que le remplacement d'nne lamps entraine géné-
`ralement un réglage compliqué et de longues operations
`
`d'adaptation du systems optique de transmission au flux
`
`de rayonnement spécifique de 1a.lampe en question. on
`peut, entre certaines linites, augmenter la puissance de
`rayonnement tout en conservant la charge totale de l'éner-
`gie électrique investie dans le rayonnement, pour la
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`longueur d'onde voulue et la largeur d'éta1ement préférée.
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`On peut y parvenir en donnant au milieu actif_une compo-
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`sition optimale et en réalisant des conditions de pres—
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`sion at de temperature optimales pour le plasma lors de
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`30
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`la production du raycnnement.
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`I1 y a lieu cependant de
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`tenir compte ée limitations qui découlent de l‘incompa—
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`tibilité existent, § la temperature de fonctionnement,
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`entre différents milieux actifs et les matériaux qui
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`constituent les électrodes et les parois, de sorts que,
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`compte tenu de la durée de resistance de ces matériaux,
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`les conditions de éécharge doivent étre choisies souvent
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`de telle maniere qu‘elles s‘écartent sensiblement des
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`valeurs cptimales. D'autres limitations résultent, dans
`le cas d'un fonctionnement non stationnaire. du fait
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`10
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`15
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`20
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`25
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`30
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`que la source de rayonnement doit remplir en meme temps
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`les fonctions de commutateur électrique 5 grande puissance
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`et de transformateur d'énergie électrique en rayonnement.
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`Dans ce cas également,
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`le jeu pour 1’optimisation de la
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`production d‘un rayonnement efficace Se trouve limité,
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`car la sécurité de l'al1umage et fie la commutation est
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`liée é certains états du plasma.
`Dans le cas du fonctionnement stationnaire comme
`
`dans le cas du fonctionnement par impulsions, il y a,
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`éans les appareils de rayonnement é électrodes, des angles
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`solides morts dans lesquels le rayonnement ne peut pas
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`etre utilisé bien que l'insertion d'éléments optiques
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`convenables, comme, par example, des réflecteurs ellip-
`soidaux et/cu des fibres conductrices de la lumiére,
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`permette
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`théoriquement d‘uti1iser également les zones
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`formées par ces angles et, de ce fait, de fournir au
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`systems optique le maximum a‘énergie de rayonnement. Pour
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`l‘éclairement des systemes optiques utilises dans les
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`micro-installations de photolithographie, on utilise
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`également, comme sources de rayonnement, des lasers (SPIE
`
`Vol. 174 (1979) p. 28 ... 36 "Un éclairage coherent
`
`améliore 1‘impression "graduelle et répétée" sur les
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`galettes“ par Michel Lacombat et autres). Les principales
`limitations de ces sources lumineuses résultent de leur
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`grande coherence spatiale et des distcrsions de structure
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`qui en résultent, de leur forte monochromie et des effets
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`d'ondes stationnaires qui en résultent éans les matériels
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`sensibles A
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`la lumiere. De plus, en général, dans les
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`zones du spectre avantageuses, il n'y a pas de laser
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`ayant une grande puissance de rayonnement ou un rendement
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`d‘efficacité favorable. L'utilisation de 3fl59rS"excimer“,
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`qui émettent l‘énergie nécessaire dans le domaine de
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`longueurs d'ondes voulu (domaine ultraviolet),
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`se limits
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`a des procédés de lithographie par contact
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`(SPIE Vol. 334
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`(1982) p 259 ... 262 "Lithographie par contact A forte
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`résolution ultrarapide au moyen de laser excimer" par
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`K. Jain et autres), car la coherence partielle spatiale
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`nécessaire a 1'éclairement des systémes de lithographie
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`par projection ne peut pas étre réalisée a un degré tel
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`que son utilisation technique se justifie.
`Le but de l‘invention est la réalisation d'une
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`source de rayonnement de grande puissance qui ait une
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`longue fiurée de vie et permette l'inclusion d‘une zone
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`importante d'angles solides et un éclairement précis et
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`rapide de zones photosensibles et qui, de ce fait, assure
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`a ées installations de photolithographie une grande
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`productivité. L'invention doit donc permettre de réaliser
`une source de rayonnement pour appareils d'optique, notam—
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`ment pour systemes de reproduction photolithographiques,
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`qui utilise le rayonnement é'un plasma. Par une séparation
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`spatiale entre le plasma et la paroi on d'autres instal-
`lations associées a une cavité et sans utilisation
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`d'électrodes montées dans la cavité ni de champs de haute
`fréquence pour la concentration sfiatiale de l‘énergie,
`elle doit permettre d'obtenir une longue durée de vie
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`et une densité de puissance élevée. De plus, il y a dimi-
`
`nution des charges imposées a la cavité par les ondes
`de choc en cas de fonctionnement par impulsions de la
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`10
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`15
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`20
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`25
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`30
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`source de rayonnement et il n‘y a pas de zones d'angles
`solides morts dues a des électrodes on a d'autres instal—
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`lations montées dans la cavité. La source de rayonnement
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`suivant l'invention doit comporter un jeu large pour
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`l'optimation de la production du rayonnement dans le
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`domaine de longueurs d'onde voulu, car le choix des
`
`milieux actifs et des conditions de pression et de tempe-
`
`rature doit se faire indépendamment de la compatibilité
`avec les matériaux constituent les électrodes. En ce
`
`qui concerne le rayonnement laser, la source de rayon-
`
`nement présente l'avantage que, notamment éans le cas
`
`des systemes de reproduction photolithographiques, elle
`
`présente une cohésion partielle spatiale notable et que
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`sa structure spectrale est telle que les effets d'ondes
`
`stationnaires dans le matériel photosensible sont atténués.
`Ce but est atteint, suivant 1’invention,du fait
`
`qu'une enceinte étanche aux gaz remplie par un milieu
`de décharge comporte au moins une ouverture d'entrée leis-
`sant passer un rayonnement laser at au moins une ouver—
`ture de sortie laissant passer un rayonnement de plasma
`
`et que la production et le maintien d'un plasma émettant
`
`un rayonnement dans le milieu de décharge sont assures,
`
`d'une maniere connue, par un laser au moins situé a
`l'extérieur de l'enceinte, des moyens optiques assurant
`
`la focalisation du rayonnement laser dans le milieu de
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`décharge étant montés au niveau d'une ouverture d'entrée,
`
`de sorte que le plasma se trouve 5 une certaine aistance
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`de la paroi de l'enceinte et que le rayonnement de
`
`plasma sort de l'enceinte par l'ouverture de sortie.
`
`Lorsque la puissance de rayonnement d'un laser
`
`telle qu'elle est fournie n'est pas suffisante pour une
`
`décharge dans le milieu fie décharge, il est avantageux
`
`qua l‘appareil comporte, pour l‘allumage du milieu de
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`décharge, a l'extérieur de 1’enceinte, au moins un autre
`
`laser fonctionnant par impulsions qui est dirigé par des
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`10
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`15
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`20
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`25
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`30
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`moyens optiques pour assure: la focalisation, au niveau
`35 d'une ouverture d'entrée,
`flu meme volume.
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`Une variante avafitageuse,en ce qui concerne le
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`changement de position du plasma émettant le rayonnement,
`
`consiste E placer les moyens optiques assurant la foca-
`
`lisation du rayonnement laser é l'extérieur de l‘enceinte.
`
`On pent alors disposer avantageusement des installations
`
`permettant le réglage des moyens optiques assurant la
`
`focalisation du rayonnement laser.
`
`On peut simplifier avantageusement la réalisation
`
`de la source de rayonnement en-placant les moyens optiques
`
`assurant la focalisation du rayonnement laser A l’intérieur
`
`at/ou A la surface de l'enceinte. Dans ces conditions,
`
`la paroi intérieure de l'enceinte constitue un moyen
`
`optique assurant la focalisation du rayonnement provenant
`
`de 1‘extérieur. Pour inclure une zone d‘angles solides
`
`morts aussi grande que possible, il est avantageux de
`
`donner a la paroi intérieure de l‘enceinte une forme telle
`
`qu'elle constitue un moyen optique assurant la réflexion
`
`du rayonnement provenant du plasma. Il est alors avantageux
`
`que