`Melnychuk et al.
`
`(10) Patent N0.:
`
`(45) Date of Patent:
`
`US 6,972,421 B2
`Dec. 6, 2005
`
`US006972421B2
`
`(54) EXTREME ULTRAVIOLET LIGHT SOURCE
`
`(60)
`
`(75)
`
`Inventors: Stephan T. Melnychuk, Carlsbad, CA
`(US); William N. Partlo, Poway, CA
`(US); Igor V. Fomenkov, San Diego,
`CA (US); I. Roger Oliver, San Diego,
`CA (US); Richard M. Ness, San Diego,
`CA (US); Norbert Bowering, San
`Diego, CA (US); Oleh Khodykin, San
`Diego, CA (US); Curtis L. Rettig,
`Vista, CA (US); Gerry M.
`Blumenstock, San Diego, CA (US);
`Timothy S. Dyer, Oceanside, CA (US);
`Rodney D. Simmons, San Diego, CA
`(US); Jerzy R. Hoffman, Escondido,
`CA (US); R. Mark Johnson, Ramona,
`CA (US)
`
`(73) Assignee: Cymer, Inc., San Diego, CA (US)
`
`( * ) Notice:
`
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 107 days.
`
`(21) Appl. No.: 10/409,254
`
`(22)
`
`Filed:
`
`Apr. 8, 2003
`
`(65)
`
`Prior Publication Data
`US 2004/0108473 A1 Jun. 10, 2004
`
`Related U.S. Application Data
`
`(63)
`
`Continuation—in—part of application No. 10/384,967, filed on
`Mar. 8, 2003, which is a continuation—in—part of application
`No. 10/189,824, filed on Jul. 3, 2002, now Pat. No. 6,815,
`700, which is a continuation—in—part of application No.
`10/120,655, filed on Apr. 10, 2002, now Pat. No. 6,744,060,
`which is a continuation-in-part of application No. 09/875,
`719, filed on Jun. 6, 2001, now Pat. No. 6,586,757, which is
`a continuation—in—part of application No. 09/875,721. filed
`on Jun. 6, 2001, now Pat. No. 6,566,668, which is a
`continuation—in—part of application No. 09/696,084, filed on
`Oct. 16, 2000, now Pat. No. 6,566,667, which is a continu-
`ation—in—part of application No. 09/590,962, filed on Jun. 9,
`2000, now abandoned.
`
`Provisional application No. 60/422,808, filed on Oct. 31,
`2002, and provisional application No. 60/419,805, filed on
`Oct. 18, 2002.
`
`Int. Cl.7 ............................................... .. H01J 35/20
`(51)
`(52) U.S. Cl.
`............................. .. 250/504 R; 250/493.1;
`378/119
`
`(58) Field of Search ........................ .. 250/504 R, 493.1;
`378/119; 372/5, 87
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`2,759,106 A
`3,150,483 A
`3,232,046 A
`
`8/1956 Wolter ....................... .. 250/53
`
`9/1964 Mayfield et al.
`60/35.5
`2/1966 Meyer ...................... .. 50/35.5
`
`(Continued)
`OTHER PUBLICATIONS
`
`Apruzese, J.P., “X—Ray Laser Research Using Z Pinches,”
`Am. Inst. 0fPhys. 399-403, (1994).
`
`(Continued)
`
`Primary Examiner—Kiet T. Nguyen
`(74) Attorney, Agent, or Firm—William C. Cray; Cymar,
`Inc.
`
`(57)
`
`ABSTRACT
`
`The present invention provides a reliable, high-repetition
`rate, production line compatible high energy photon source.
`Avery hot plasma containing an active material is produced
`in vacuum chamber. The active material is an atomic ele-
`ment having an emission line within a desired extreme
`ultraviolet (EUV) range. Apulse power source comprising a
`charging capacitor and a magnetic compression circuit com-
`prising a pulse transformer, provides electrical pulses having
`sufficient energy and electrical potential sufficient to pro-
`duce the EUV light at an intermediate focus at rates in excess
`of 5 Watts. In preferred embodiments designed by Appli-
`cants in-band, EUV light energy at the intermediate focus is
`45 Watts extendable to 105.8 Watts.
`
`78 Claims, 50 Drawing Sheets
`
`
`
`(cid:34)(cid:52)(cid:46)(cid:45)(cid:1)(cid:18)(cid:17)(cid:18)(cid:20)
`
`ASML 1013
`
`
`
`US 6,972,421 B2
`Page 2
`
`U.S. PATENT DOCUMENTS
`
`Fomenkov, et al., “Characterization of a 13.5nm Source for
`EUV Lithography based on a Dense Plasma Focus and
`Lithium Emission,” Sematech Intl. Workshop on EUV
`Lithography (Oct. 1999).
`Hansson, et al., “Xenon liquid jet laser—plasma source for
`EUV lithography,” Emerging Lithographic Technologies IV,
`Proc. Of SPIE , vol. 3997:729-732 (2000).
`Kato, Yasuo, “Electrode Lifetimes in a Plasma Focus Soft
`X—Ray Source,” J. Appl. Phys. (33) Pt. 1, No. 824742-4744
`(1991).
`Kato, et al., “Plasma focus x-ray source for lithography,”
`Am. Vac. Sci. Tech. B., 6(1): 195-198 (1988).
`Lebert, et al., “Soft x-ray emission of laser-produced plas-
`mas using a low-debris cryogenic nitrogen target,” J. App.
`Phys., 84(6):3419-3421 (1998).
`Lebert, et al., “A gas discharge based radiation source for
`EUV-lithography,” Intl. Conf. Micro and Nano-Engineer-
`ing 98 (Sep. 2-24, 1998) Leuven. Belgium.
`Lebert, et al., “Investigation of pinch plasmas with plasma
`parameters promising ASE,” Inst. Phys. Conf. Ser No. 125:
`Section 9, pp. 411-415 (1992) Schiersee, Germany.
`Lee, Ja H., “Production of dense plasmas in hypocyloidal
`pinch apparatus,” The Phys. Of Fluids, 20(2):313-321
`(1977).
`Lewis, Ciaran L.S., “Status of Collision-Pumped X—ray
`Lasers,” Am Inst. Phys. pp. 9-16 (1994).
`Malmqvist, et al., “Liquid-jet target for laser—plasma soft
`x-ray generation,”Am. Inst. Phys. 67(12):4150-4153 1996).
`Mather, et al., “Stability of the Dense Plasma Focus,” Phys.
`Of Fluids, 12(11):2343—2347 (1969).
`Mayo, et al., “A magnetized coaxial source facility for the
`generation of energic plasma flows,” Sci. Technol. vol. 4:pp.
`47-55 (1994).
`Mayo, et al., “Initial Results on high enthalpy plasma
`generation in a magnetized coaxial source,” Fusion Tech vol.
`26:1221-1225 (1994).
`Nilsen, et al., “Analysis of resonantly photopumped Na-Ne
`x-ray-laser scheme,” Am Phys. Soc. 44(7):4591-4597
`(1991).
`Partlo, et al., “EUV (13.5nm) Light Generation Using a
`Dense Plasma Focus Device”, SPIE Proc, On Emergine
`Lithographic Technologies III, vol. 3676, 846-858 (Mar.
`1999).
`Price, Robert H., “X-Ray Microscopy using Grazing Inci-
`dence Reflection Optics,” Am. Inst. Phys.
`, pp. 189-199,
`(1981).
`0
`Qi, et al., “Fluorescence in Mg IX emission at 48.340 A
`from Mg Pinch plasmas photopumped by Al XI Line radia-
`tion at 48.338 A.” The Am. Phys. Soc., 47(3):2253-2263
`(Mar. 1993).
`Scheuer, et al., “A Magnetically-Nozzled, Quasi-Steady,
`Multimegawatt, Coaxial Plasma Thruster,” IEEE: Transac-
`tions on Plasma Science, 22(6) (Dec. 1994).
`Schriever, et al., “Laser-produced lithium plasma as a
`narrow-band extended ultraviolet radiation source for pho-
`toelectron spectroscopy,” App. Optics, 37(7):1243-1248,
`(Mar. 1998).
`Schriever, et al., “Narrowband laser produced extreme ultra-
`violet sources adapted to silicon/molybdenum multilayer
`optics,” J. of App. Phys., 83(9):4566-4571, (May 1998).
`Zombeck, M.V., “Astrophysical Observations with High
`Resolution X—ray Telescope,” Am.
`Inst. Of Phys., pp.
`200-209 (1981).
`
`10/1966 Boden ....................... .. 60/202
`7/1973 Demarest ..
`250/227
`
`6/1976 Harris ...................... .. 425/467
`6/1976 Dawson .................... .. 250/493
`7/1976 Roberts et al.
`..
`250/402
`8/1977 Lee .................... .. 313/231.6
`5/1978 Samis
`................ .. 313/231.5
`3/1979 Mallozziet al.
`.......... .. 250/503
`7/1979 Witter
`....................... .. 75/246
`5/1980 Giardini
`.... .. 123/30
`12/1982 Asik . . . . . . . .
`. . . .. 123/143
`1/1983 Endo . . . . . . . . . . .
`. . . .. 123/620
`3/1985 Cartz etal.
`............... .. 378/119
`3/1985 Asmussen et al.
`.......... .. 315/39
`
`. 378/119
`8/1985 Weiss etal.
`...... ..
`8/1985 Iwamatsu
`378/119
`12/1985 Ward . . . . . . . . . . . . . . .
`. . . .. 123/536
`6/1986 Herziger et al.
`.......... .. 378/119
`10/1986 Weiss et al.
`................ .. 378/34
`12/1986 Gann ........ ..
`431/71
`12/1986 Weiss etal.
`..
`. 378/119
`1/1987 Okada et al.
`.
`378/34
`6/1988 Gupta et al.
`.............. .. 378/119
`6/1988 Gupta et al.
`.............. .. 378/119
`10/1988 Ward . . . . . . . . . . . . . . .
`. . . .. 123/162
`6/1989 Riordan et al.
`..
`378/119
`5/1990 Birx et al.
`307/106
`6/1991 Neff et al.
`................ .. 378/122
`6/1991 Horsley et al.
`........... .. 324/674
`4/1992 Hammer et al.
`.
`430/311
`6/1992 Dethlefsen . . . . . . .
`. . . .. 315/326
`8/1992 Birx . . . . . . . . . . . .
`. . . .. 307/419
`12/1992 Kumakhov ..
`.... .. 378/34
`5/1994 Cook ct al.
`....... ..
`372/37
`5/1995 Dearman et al.
`244/53
`9/1995 Birx et al.
`..... ..
`372/38
`4/1996 McGeoch
`.. 378/119
`3/1998 Birx et al.
`372/38
`6/1998 Partlo . . . . . . .
`. . . .. 25 /504
`2/1999 Birx . . . . . . . . . . . .
`. . . .. 219/121
`8/1999 Partlo et al.
`372/38
`10/1999 Silfvast et al.
`. 378/122
`2/2000 Silfvast et al.
`25 /504
`3/2000 Schulz .......... ..
`204/192.15
`4/2000 Partlo . . . . . . . . . .
`. . . . . . .. 25 /504
`5/2000 Partlo et al.
`..
`...... .. 25 /504
`1/2001 Birx .......... ..
`219/121.57
`2/2001 Pascente
`....... .. 363/21
`..
`5/2003 Partlo et al.
`25 /504
`.
`5/2003 Rauch et al.
`25 /504
`5/2003 McGeoch .............. .. 378/119
`7/2003 Melnychuk et al.
`/504
`12/2001 Kandaka et al.
`8/119
`8/2002 Partlo et al.
`. . . . . . . .
`. . . .. 25 /504
`11/2002 Schriever et al.
`378/119
`4/2003 Ahmad et al.
`............ .. 378/119
`
`
`
`
`
`
`
`
`
`
`
`
`
`3,279,176 A
`3,746,870 A
`3,960,473 A
`3,961,197 A
`3,969,628 A
`4,042,848 A
`4,088,966 A
`4,143,275 A
`4,162,160 A
`4,203,393 A
`4,364,342 A
`4,369,758 A
`4,504,964 A
`4,507,588 A
`4,536,884 A
`4,538,291 A
`4,561,406 A
`4,596,030 A
`4,618,971 A
`4,626,193 A
`4,633,492 A
`4,635,282 A
`4,751,723 A
`4,752,946 A
`4,774,914 A
`4,837,794 A
`4,928,020 A
`5,023,897 A
`5,027,076 A
`5,102,776 A
`5,126,638 A
`5,142,166 A
`5,175,755 A
`5,313,481 A
`5,411,224 A
`5,448,580 A
`5,504,795 A
`5,729,562 A
`5,763,930 A
`5,866,871 A
`5,936,988 A
`5,963,616 A
`6,031,241 A
`6,039,850 A
`6,051,841 A
`6,064,072 A
`6,172,324 B1
`6,195,272 B1
`6,566,667 B1
`6,566,668 B2
`6,567,499 B2 *
`6,586,757 B2
`2001/0055364 A1
`2002/0100882 A1
`2002/0168049 A1
`2003/0068012 A1
`
`OTHER PUBLICATIONS
`
`Bollanti, et al., “Compact Three Electrodes Excimer Laser
`IANUS for
`a POPA Optical System,” SPIE Proc.
`(220o)144—153, (1994).
`Bollanti, et al., “Ianus, the three-electrode excimer laser,”
`App. Phys. B (Laser & Optics) 66(4):401-406, (1998).
`Choi, et al., “A 1013 A/s High Energy Density Micro
`Discharge Radiation Source,” B. Radiation Characteristics,
`p. 287-290.
`Choi, et al., “Fast pulsed hollow cathode capillary discharge
`device,” Rev. of Sci. Instrum. 69(9):3118-3122 (1998).
`
`
`
`US 6,972,421 B2
`Page 3
`
`Choi et al., “Temporal development of hard and soft X—ray
`emission from a gas-puff Z pinch,” Rev. Sci. Instrum. 57(8),
`pp. 2162-2164 (Aug. 1986).
`Silfvast, et al., “High-power plasma discharge source at
`13.5 nm and 11.4 nm for EUV lithography,” SPIE, vol.
`36762272-275, (Mar. 1999).
`Silfvast, et al., “Lithium hydride capillary discharge creates
`X—ray plasma at 13.5 namometers,” Laser Focus World, p.
`13. (Mar. 1997).
`Wilhein, et al., “A slit grating spectrograph for quantitative
`soft X—ray spectroscopy,” Am. Inst. Of Phys. Rev. of Sci.
`Instrum., 70(3):1694-1699, (Mar. 1999).
`Wu, et al., “The vacuum Spark and Spherical Pinch X—ray/
`EUV Point Sources,” SPIE, Conf On Emerging Tech. III,
`Santa Clara, CA vol. 3676:410-420, (Mar. 1999).
`Giordano and Letardi, “Magnetic pulse compressor for
`prepulse discharge in spiker-sustainer excitati technique for
`XeC1 lasers,” Rev. Sci. Instrum 65(8), pp. 2475-2481 (Aug.
`1994).
`Jahn, Physics of Electric Propulsion, McGraw—Hill Book
`Company, (Series in Missile and Space U.S.A.), Chap. 9,
`“Unsteady Electromagnetic Acceleration,” p. 257 (1968).
`
`Lebert et al, “Comparison of laser produced and gas dis-
`charge based EUV sources for different applications,” Inter-
`national Conference Micro- and Nano-Engineering 98,
`Sep. 22-24, 1998, Leuven, Belgium, 6 pages.
`Lowe, “Gas plasmas yield X rays for Lithography,” Elec-
`tronics, pp. 40-41 (Jan. 27, 1982).
`Mather, “Formation of a IIigh—Densty Deuterium Plasma
`Focus,” The Physics of Fluids, 8(2), 366-377 (Feb. 1965).
`Matthews and Cooper, “Plasma sources for X—ray lithogra-
`phy,” SPIE, 333, Submicron Lithography, pp. 136-139
`(1982).
`Pearlman and Riordan, “X-ray lithography using a pulsed
`plasma source,” J . Vac. Sci. Technol, pp. 1190-1193 (Nov./
`Dec. 1981).
`Shiloh et al., “Z Pinch of a Gas Jet,” Physical Review Lett.,
`40(8), pp. 515-518 (Feb. 20, 1978).
`Stallings et al., “Imploding argon plasma experiments,”
`Appl. Phys. Lett., 35(7), pp. 524-526 (Oct. 1, 1979).
`
`* cited by examiner
`
`
`
`U.S. Patent
`
`ceD
`
`US 6,972,421 B2
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`US 6,972,421 B2
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`Dec. 6, 2005
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`US 6,972,421 B2
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`1
`EXTREME ULTRAVIOLET LIGHT SOURCE
`
`This application is a continuation-in-part of U.S. Ser. No.
`10/384,967 filed Mar. 8, 2003, Ser. No. 10/189,824 filed Jul.
`3, 2002 now U.S. Pat. No. 6,815,700, U.S. Ser. No. 10/120,
`655 filed Apr. 10, 2002, now U.S Pat. No. 6,744,060, U.S.
`Ser. No. 09/875,719 filed Jun. 6, 2001 now U.S. Pat. No.
`6,586,757, and U.S. Ser. No. 09/875,721 filed Jun. 6, 2001
`now U.S. Pat No. 6,566,668, U.S. Ser. No. 09/690,084 filed
`Oct. 16, 2000 now U.S. Pat. No. 6,566,667 ; and claims the
`benefit of patent application Ser. No. 60/422,808 filed Oct.
`31, 2002 and patent application Ser. No. 60/419,805 filed
`Oct. 18, 2002; all of which is incorporated by reference
`herein. This invention relates to high-energy photon sources
`and in particular highly reliable x-ray and high-energy
`ultraviolet sources.
`
`BACKGROUND OF THE INVENTION
`
`The semiconductor industry continues to develop litho-
`graphic technologies, which can print ever-smaller inte-
`grated circuit dimensions. These systems must have high
`reliability, cost effective throughput, and reasonable process
`latitude. The integrated circuit fabrication industry has
`recently changed over from mercury G-line (436 nm) and
`I-line (365 nm) exposure sources to 248 nm and 193 nm
`excimer laser sources. This transition was precipitated by the
`need for higher lithographic resolution with minimum loss
`in depth-of-focus.
`The demands of the integrated circuit industry will soon
`exceed the resolution capabilities of 193 nm exposure
`sources, thus creating a need for a reliable exposure source
`at a wavelength significantly shorter than 193 nm. An
`excimer line exists at 157 nm, but optical materials with
`sufficient transmission at this wavelength and sufficiently
`high optical quality are difficult to obtain. Therefore, all-
`reflective imaging systems may be required. An all reflective
`optical system requires a smaller numerical aperture (NA)
`than the transmissive systems. The loss in resolution caused
`by the smaller NA can only be made up by reducing the
`wavelength by a large factor. Thus, a light source in the
`range of 10 to 20 nm is required if the resolution of optical
`lithography is to be improved beyond that achieved with 193
`nm or 157 nm. Optical components for light at wavelengths
`below 157 nm are very limited. However, effective incidents
`reflectors are available and good reflectors multi-layer at
`near normal angles of incidence can be made for light in the
`wavelength range of between about 10 and 14 nm. (Light in
`this wavelength range is within a spectral range known as
`extreme ultraviolet light and some would light in this range,
`soft x-rays.) For these reasons there is a need for a good
`reliable light source at wavelengths in this range such as of
`about 13.5 nm.
`
`The present state of the art in high energy ultraviolet and
`x-ray sources utilizes plasmas produced by bombarding
`various target materials with laser beams, electrons or other
`particles. Solid targets have been used, but the debris created
`by ablation of the solid target has detrimental effects on
`various components of a system intended for production line
`operation. A proposed solution to the debris problem is to
`use a frozen liquid or liquidfied or frozen gas target so that
`the debris will not plate out onto the optical equipment.
`However, none of these systems have so far proven to be
`practical for production line operation.
`It has been well known for many years that x-rays and
`high energy ultraviolet radiation could be produced in a
`plasma pinch operation. In a plasma pinch an electric current
`
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`is passed through a plasma in one of several possible
`configuration such that the magnetic field created by the
`flowing electric current accelerates the electrons and ions in
`the plasma into a tiny volume with sufficient energy to cause
`substantial stripping of outer electrons from the ions and a
`consequent production of x-rays and high energy ultraviolet
`radiation. Various prior art techniques for generation of high
`energy radiation from focusing or pinching plasmas are
`described in the background section of U.S. Pat. No. 6,452,
`199.
`
`Typical prior art plasma focus devices can generate large
`amounts of radiation suitable for proximity x-ray
`lithography, but are limited in repetition rate due to large per
`pulse electrical energy requirements, and short lived internal
`components. The stored electrical energy requirements for
`these systems range from 1 kJ to 100 kJ. The repetition rates
`typically did not exceed a few pulses per second.
`What is needed are production line reliable, systems for
`producing collecting and directing high energy ultraviolet
`x-radiation within desired wavelength ranges which can
`operate reliably at high repetition rates and avoid prior art
`problems associated with debris formation.
`SUMMARY OF THE INVENTION
`
`The present invention provides a reliable, high-repetition
`rate, production line compatible high energy photon source.
`Avery hot plasma containing an active material is produced
`in vacuum chamber. The active material is an atomic ele-
`
`ment having an emission line within a desired extreme
`ultraviolet (EUV) wavelength range. A pulse power source,
`comprising a charging capacitor and a magnetic compres-
`sion circuit comprising a pulse transformer, provides elec-
`trical pulses having sufficient energy and electrical potential
`sufficient to produce the EUV light at an intermediate focus
`at rates in excess of 5 Watts on a continuous basis and in
`
`excess of 20 Watts on a burst basis. In preferred embodi-
`ments designed by Applicants in-band, EUV light energy at
`the intermediate focus is 45 Watts extendable to 105.8 Watts.
`
`In preferred embodiments the high energy photon source
`is a dense plasma focus device with co-axial electrodes. the
`electrodes are configured co-axially. The central electrode is
`preferably hollow and an active gas is introduced out of the
`hollow electrode. This permits an optimization of the spec-
`tral line source and a separate optimization of a buffer gas.
`In preferred embodiments the central electrode is pulsed
`with a high negative electrical pulse so that the central
`electrode functions as a hollow cathode. Preferred embodi-
`
`ments present optimization of capacitance values, anode
`length and shape and preferred active gas delivery systems
`are disclosed. Special techniques are described for cooling
`the central electrode. In one example, water is circulated
`through the walls of the hollow electrode.
`In another
`example, a heat pipe cooling system is described for cooling
`the central electrode.
`An external reflection radiation collector-director collects
`
`radiation produced in the plasma pinch and directs the
`radiation in a desired direction. Good choices for the reflec-
`
`ruthenium,
`tor material are molybdenum, palladium,
`rhodium, gold or tungsten. In preferred embodiments the
`active material may be xenon, lithium vapor, tin vapor and
`the buffer gas is helium and the radiation-collector is made
`of or coated with a material possessing high grazing inci-
`dence reflectivity. Other potential active materials are
`described.
`
`In preferred embodiments the buffer gas is helium or
`argon. Lithium vapor may be produced by vaporization of
`
`
`
`US 6,972,421 B2
`
`3
`solid or liquid lithium located in a hole along the axis of the
`central electrode of a coaxial electrode configuration.
`Lithium may also be provided in solutions since alkali
`metals dissolve in amines. A lithium solution in ammonia
`
`(NH3) is a good candidate. Lithium may also be provided by
`a sputtering process in which pre-ionization discharges
`serves the double purpose of providing lithium vapor and
`also pre-ionization. In preferred embodiments, debris is
`collected on a conical nested debris collector having sur-
`faces aligned with light rays extending out from the pinch
`site and directed toward the radiation