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`Si446X AND FCC PART 90 COMPLIANCE AT 450–470 MHZ
`
`1. Introduction
`This application note demonstrates the compliance of Si446x RFICs with the regulatory requirements of FCC Part
`90 in the 450-470 MHz band. As will be shown, best compliance is obtained when the RFIC is configured for a
`transmit power level of approximately +10 dBm. Any of the chips within the Si446x family (e.g., Si4460, Si4461,
`Si4463, Si4464, Si4467, or Si4468) can provide this level of transmit power and could be used to demonstrate
`compliance; the measurements presented within this document were taken with a Si4463-B1 RFIC mounted on a
`4463-PCE20C460-EK RFSW Pico RF Test Card (see "5. Reference Design Schematic" on page 34).
`The Si446x chip was configured to transmit at the desired power level(s) by appropriate settings of the
`PA_PWR_LVL property. Various data rates and deviations were chosen in order to comply with the permissible
`channel spacings and occupied bandwidths. The tests were performed at room temperature with a supply voltage
`of VDD=3.3 V.
`1.1. Summary of Measured Results
`A summary of measured results is provided in Table 1. An overview of the measured results may be stated as
`follows:
`The Spectral Emissions Mask D requirements cannot be met on a limited number of mathematically
`predictable channels, due to spurious sidebands related to harmonics of the crystal oscillator. Compliance
`with Masks C, D, and E can be achieved on all other channels.
`The Adjacent Channel Power requirements for equipment with 25 kHz channel bandwidth can be met with
`the chip default PLL loop bandwidth of 200 kHz, but cannot be met for reduced values of PLL loop
`bandwidth (e.g., 50 kHz, such as may be desirable for improved Spectral Emissions Mask performance).
`
`Spec Par
`90.205(h)
`
`Parameter
`Power and Antenna
`Height Limits
`Types of Emissions
`90.207
`90.209(b)(5) Bandwidth Limitations
`
`Table 1. Summary of Measured Results
`Condition
`Limit
`+33 dBm
`
`Measured
`+10.43 dBm
`
`Margin
`22.57 dB
`
`Comply
`0.73 kHz
`
`F1D
`6 / 11.25 / 20kHz
`
`5.27 kHz
`
`6 / 11.25 / 20kHz
`
`7.76 kHz
`
`3.49 kHz
`
`6 / 11.25 / 20kHz
`
`10.29 kHz
`
`0.96 kHz
`
`2GFSK or 4GFSK
`2GFSK
`DR=2.4K Dev=2.0K
`2GFSK
`DR=3.6K Dev=3.0K
`2GFSK
`DR=4.8K Dev=4.0K
`Mask C
`Mask D
`
`90.210
`
`Emission Masks
`
`(see mask)
`(see mask)
`
`(see plots)
`(see plots)
`
`Comply
`Fails on few
`channels, com-
`plies else-
`where
`Comply
`
`Mask E
`
`(see mask)
`
`(see plots)
`
`Rev. 0.3 7/15
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`Copyright © 2015 by Silicon Laboratories
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`Table 1. Summary of Measured Results (Continued)
`
`90.213
`
`Frequency Stability
`
`90.214
`
`90.217
`
`90.221
`
`Transient Frequency
`Behavior
`
`Exemptions from
`Technical Standards
`Adjacent Channel
`Power
`
`90.203 (j)(5)
`
`Spectrum Efficiency
`
`6.25 kHz Chan BW
`12.5 kHz Chan BW
`25 kHz Chan BW
`6.25 kHz Chan BW
`
`F < 800 MHz,
`P < 120 mW
`Fofst = 25 kHz
`
`Fofst = 50 kHz
`
`Fofst = 75 kHz
`
`4GFSK
`SR=2.4K DR=4.8K
`Dev=0.4K
`
`±1.0 ppm
`±2.5 ppm
`±5.0 ppm
`±6.25kHz
`±3.125kHz
`±6.25kHz
`
`-55 dBc
`(or -36 dBm)
`-70 dBc
`(or -36 dBm)
`-70 dBc
`(or -36 dBm)
`4.8 kbps/6.25
`kHz
`
`N/A
`N/A
`N/A
`Negligible
`
`N/A
`N/A
`N/A
`Comply
`
`N/A
`
`N/A
`
`-63.83 dBc
`
`8.83 dB
`
`–36.77 dBm
`
`0.77 dB
`
`–38.45 dBm
`
`2.45 dB
`
`(see plots)
`
`Comply
`
`2. Summary of FCC Part 90 Requirements in the 450–470 MHz Band
`The main requirements of FCC Part 90 in the 450-470 MHz band are summarized in this section. Many sub-
`paragraphs of FCC Part 90 are applicable to wider frequency ranges which include the desired 450-470 MHz band;
`these instances are noted below.
`FCC Part 90 is only concerned with performance of the transmitter, and contains no requirements on receiver
`performance.
`2.1. FCC Part 90.205(h) Power and Antenna Height Limits
`The maximum allowable station effective radiated power (ERP) is dependent upon the station's antenna height
`above average terrain (HAAT) and required service area (in kilometers). The standard provides a table which lists
`the allowed transmit power for several combinations of antenna HAAT and required service area. The lowest
`power entry in this table is 2 watts maximum ERP for a service area of 3 kilometers and an antenna HAAT of 15
`meters. This operational scenario is most applicable to the applications served by the Si446x family of chips and is
`the power level considered within this application note.
`2.2. FCC Part 90.207 Types of Emissions
`Modulation type F1D, including 2(G)FSK and 4(G)FSK, is permitted. Most measurements performed within this
`document were taken with 2GFSK modulation; however, 4GFSK modulation was selected to demonstrate
`compliance with the Spectrum Efficiency requirements of 90.203 (j)(5). Some measurements were also taken in
`CW mode for the purpose of demonstrating the effect of the selected modulation protocol upon the measured
`performance.
`2.3. FCC Part 90.209(b) (5) Bandwidth Limitations
`The standard provides a table which specifies the channel spacing and bandwidths for each frequency band.
`Within the 406-512 MHz band, the required channel spacing is 6.25 kHz and the permissible authorized
`bandwidths are 6 kHz, 11.25 kHz, or 20 kHz. The standard provides for authorizing these bandwidths for older
`equipment that was designed to operate with 6.25 kHz, 12.5 kHz, or 25 kHz bandwidths.
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`2.4. FCC Part 90.210 Emission Masks
`The standard provides a table which specifies the required spectral emissions mask, depending upon the
`frequency band of operation and the channel bandwidth. Each emission mask is assigned an alphabetic letter
`designation (e.g., Mask A, Mask B, etc.) The spectral emission masks that apply to operation within the 421-512
`MHz band are Masks C, D, and E. The descriptions of these spectral emission masks are summarized as follows.
`2.4.1. Emission Mask C
`Equipment designed to operate with a 25 kHz channel bandwidth must meet the requirements of Emission Mask
`C. The power of any emission must be attenuated below the unmodulated carrier output power (P, in watts) as
`follows:
`On any frequency removed from the center of the authorized bandwidth by a displacement frequency (fd in
`kHz) of more than 5 kHz, but not more than 10 kHz: At least 83 log (fd / 5) dB.
`On any frequency removed from the center of the authorized bandwidth by a displacement frequency (fd in
`2 /
`kHz) of more than 10 kHz, but not more than 250 percent of the authorized bandwidth: At least 29 log (fd
`11) dB or 50 dB, whichever is the lesser attenuation.
`On any frequency removed from the center of the authorized bandwidth by more than 250 percent of the
`authorized bandwidth: At least 43 + 10 log (P) dB, where P is the power in watts.
`This spectral emission mask is shown in graphical form in the plot of Figure 1, assuming a transmitter with an
`output power of P = 1 watt.
`
`Figure 1. Emission Mask C (Pout=1W)
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`2.4.2. Emission Mask D
`Equipment designed to operate with a 12.5 kHz channel bandwidth must meet the requirements of Emission
`Mask D. Any emission must be attenuated below the power (P, in watts) of the highest emission contained within
`the authorized bandwidth as follows:
`On any frequency from the center of the authorized bandwidth f0 to 5.625 kHz removed from f0: Zero dB.
`On any frequency removed from the center of the authorized bandwidth by a displacement frequency (fd in
`kHz) of more than 5.625 kHz but no more than 12.5 kHz: At least 7.27(fd −2.88 kHz) dB.
`On any frequency removed from the center of the authorized bandwidth by a displacement frequency (fd in
`kHz) of more than 12.5 kHz: At least 50 + 10 log (P) dB or 70 dB, whichever is the lesser attenuation.
`This spectral emission mask is shown in graphical form in the plot of Figure 2, assuming a transmitter with an
`output power of P = 1 watt. The standard requires that the measurement is taken using a spectrum analyzer
`resolution bandwidth of ResBW=100 Hz and using Peak Hold mode, for frequency offsets up to 50 kHz from the
`edge of the authorized bandwidth.
`
`Figure 2. Emission Mask D (Pout=1W)
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`2.4.3. Emission Mask E
`Equipment designed to operate with a 6.25 kHz or less channel bandwidth must meet the requirements of
`Emission Mask E. Any emission must be attenuated below the power (P, in watts) of the highest emission
`contained within the authorized bandwidth as follows:
`On any frequency from the center of the authorized bandwidth f0 to 3.0 kHz removed from f0 :Zero dB
`On any frequency removed from the center of the authorized bandwidth by a displacement frequency (fd in
`kHz) of more than 3.0 kHz but no more than 4.6 kHz: At least 30 + 16.67(fd −3 kHz) or 55 + 10 log (P) or
`65 dB, whichever is the lesser attenuation.
`On any frequency removed from the center of the authorized bandwidth by more than 4.6 kHz: At least 55
`+ 10 log (P) or 65 dB, whichever is the lesser attenuation.
`This spectral emission mask is shown in graphical form in the plot of Figure 3, assuming a transmitter with an
`output power of P = 1 watt. The standard requires that the measurement is taken using a spectrum analyzer
`resolution bandwidth of ResBW=100 Hz and using Peak Hold mode, for frequency offsets up to 50 kHz from the
`edge of the authorized bandwidth.
`
`Figure 3. Emission Mask E (Pout=1W)
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`2.5. FCC Part 90.213 Frequency Stability
`The standard provides a table which specifies the required minimum frequency stability for each frequency band,
`station type (e.g., fixed or mobile), and transmit output power level. In the 421-512 MHz band, mobile stations with
`output power of 2 watts or less must have the following minimum frequency stability:
`±5.0 ppm, when designed to operate with a 25 Hz channel bandwidth
`±2.5 ppm, when designed to operate with a 12.5 kHz channel bandwidth
`±1.0 ppm, when designed to operate with a 6.25 kHz channel bandwidth
`2.6. FCC Part 90.214 Transient Frequency Behavior
`The standard provides a table which specifies the required maximum transient frequency difference (from the
`assigned transmitter frequency) during certain time intervals of the transmission, including turn-on and turn-off.
`The requirements vary depending upon the channel bandwidth, frequency band, and transmit output power level.
`In the 421-512 MHz band, transmitters designed to operate with a 25 kHz channel bandwidth shall maintain a
`transient frequency difference of less than:
`±25 kHz, for the first 10 msec after turn-on
`±12.5 kHz, for the next 25 msec period
`±25 kHz, for the first 10 msec after turn-off
`In the 421-512 MHz band, transmitters designed to operate with a 12.5 kHz channel bandwidth shall maintain a
`transient frequency difference of less than:
`±12.5 kHz, for the first 10 msec after turn-on
`±6.25 kHz, for the next 25 msec period
`±12.5 kHz, for the first 10 msec after turn-off
`In the 421-512 MHz band, transmitters designed to operate with a 6.25 kHz channel bandwidth shall maintain a
`transient frequency difference of less than:
`±6.25 kHz, for the first 10 msec after turn-on
`±3.125 kHz, for the next 25 msec period
`±6.25 kHz, for the first 10 msec after turn-off
`2.7. FCC Part 90.217 Exemptions from Technical Standards
`The standard provides exemptions from the technical standards (including the difficult spectral emissions masks)
`for certain devices, depending upon operating frequency range and transmit output power level. Transmitters used
`at stations licensed below 800 MHz on any frequency listed in subparts B and C of this part or licensed on a
`business category channel above 800 MHz which have an output power not exceeding 120 milliwatts are exempt
`from the technical requirements, but must instead comply with the following:
`For equipment designed to operate with a 25 kHz channel bandwidth, the sum of the bandwidth occupied
`by the emitted signal plus the bandwidth required for frequency stability shall be adjusted so that any
`emission appearing on a frequency 40 kHz or more removed from the assigned frequency is attenuated at
`least 30 dB below the unmodulated carrier.
`For equipment designed to operate with a 12.5 kHz channel bandwidth, the sum of the bandwidth occupied
`by the emitted signal plus the bandwidth required for frequency stability shall be adjusted so that any
`emission appearing on a frequency 25 kHz or more removed from the assigned frequency is attenuated at
`least 30 dB below the unmodulated carrier.
`For equipment designed to operate with a 6.25 kHz channel bandwidth, the sum of the bandwidth occupied
`by the emitted signal plus the bandwidth required for frequency stability shall be adjusted so that any
`emission appearing on a frequency 12.5 kHz or more removed from the assigned frequency is attenuated
`at least 30 dB below the unmodulated carrier.
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`2.8. FCC Part 90.221 Adjacent Channel Power Limits
`The standard provides Adjacent Channel Power (ACP) limits for equipment designed to operate with a 25 kHz
`channel bandwidth. The ACP requirements vary as a function of the displacement from the channel center
`frequency and as a function of the transmit output power. The measurement bandwidth is 18 kHz.
`At 25 kHz offset from the channel center frequency, the ACP shall not be more than -55 dBc for devices
`with transmit power of 1 watt or less, and shall not be more than -60 dBc for devices with transmit power of
`greater than 1 watt.
`At 50 kHz offset from the channel center frequency, the ACP shall not be more than -70 dBc for devices
`with transmit power of 1 watt or less, and shall not be more than -70 dBc for devices with transmit power of
`greater than 1 watt.
`At 75 kHz offset from the channel center frequency, the ACP shall not be more than -70 dBc for devices
`with transmit power of 1 watt or less, and shall not be more than -70 dBc for devices with transmit power of
`greater than 1 watt.
`However, the adjacent channel power shall not be required to be below -36 dBm in any case.
`2.9. FCC Part 90.203(j)(5) Spectrum Efficiency
`The standard requires equipment to achieve a certain minimum efficiency in the use of the spectrum. If the
`equipment is capable of transmitting data, has transmitter output power greater than 500 mW, and has a channel
`bandwidth of more than 6.25 kHz, the equipment must be capable of supporting a minimum data rate of 4800 bits
`per second per 6.25 kHz of channel bandwidth.
`3. .Measurement Results
`All measurements were taken with an Anritsu MS2692A signal analyzer. The analyzer settings used for each
`measurement are noted within each measurement section. The WDS scripts used to configure the RFIC are
`shown in shown in "4. Wireless Development Suite (WDS) TX Script Files" on page 27.
`A significant challenge for any manufacturer of RFICs is the integration of both the VCO and crystal oscillator on
`the same die or substrate. Some amount of coupling between these circuits may occur, even when significant care
`is taken during the design and layout of the chip. The Si446x family of chips is known to experience some amount
`of such undesired coupling between the on-chip VCO and XtalOsc circuits. This coupling manifests itself as low-
`level spurious sidebands on the transmit output signal. These spurious sidebands occur only at (or very near)
`tuned frequencies that are mathematically predictable, given the frequency of the crystal oscillator reference
`signal. This predictability allows the user to partially mitigate the problem by appropriate selection of the crystal
`frequency, such that the locations of the affected channels are chosen advantageously. The formula to calculate
`the affected frequencies within the 450-470 MHz band is given by:
`
`FSPUR
`
`=
`
`N FXTAL
`
`---------------------------
`8
`
`Equation 1
`The spurious sideband level is also proportional to the TX output power, and thus a reduction in transmit output
`power level can help reduce the relative level of the sidebands. This relationship holds true until the transmit power
`level is reduced to approximately +10 dBm, below which no significant further decrease in relative spurious level is
`observed. For this reason, optimal performance is obtained when the Si446x chip is operated at +10 dBm output
`power level. Most FCC Part 90 applications operate at significantly higher output power (e.g., 1 to 2 watts) than
`even Si4463/64 chips (+20 dBm) can provide. The addition of an external power amplifier or Front End Module
`(FEM) is expected in either case, and thus operation of the Si446x chip at only +10 dBm is not considered a
`burdensome factor.
`All measurements within this section were taken with the RFIC configured for an output power level of +10 dBm.
`However, the spectrum analyzer was configured (unless noted otherwise) to offset the measured power level by 20
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`dB, thus emulating the scenario where an external power amplifier is added to the chip to boost the power level to
`+30 dBm (1watt). The measurements shown here thus represent the performance of the RFIC and assume the
`addition of an external power amplifier will not further degrade the performance
`Additionally, it may be shown that optimal performance (again with regards to spurious sidebands) is obtained
`when the chip is configured for a narrower PLL loop bandwidth (e.g., 50 kHz) than its default setting (200 kHz).
`Spurious sidebands that fall at greater frequency offsets from the carrier benefit from increased attenuation with the
`narrower loop bandwidth configuration. The measurements shown here are taken (unless noted otherwise) with a
`chip configuration resulting in a PLL loop bandwidth of ≈50 kHz.
`Although appropriate selection of the crystal frequency and operation at a reduced power level can help decrease
`the relative level of the spurious signals, they cannot be eliminated completely. There is no choice of crystal
`frequency that will result in a perfectly clean spectrum within the entire 450-470 MHz band; a small number of
`channels (5 to 6 channels) will always remain affected.
`3.1. FCC Part 90.205(h) Power and Antenna Height Limits
`The allowed transmitter antenna power is specified in FCC Part 90.205(h) as less than 2 W ERP (+33 dBm ERP),
`assuming a service area of 3 kilometers and antenna HAAT of 15 meters. The measured transmitter power is
`shown in Figure 4. This measurement was taken without emulation of an external power amplifier (by offsetting
`the spectrum analyzer by 20 dB, as discussed previously). The Si446x family of chips complies with the
`requirements of FCC Part 90.205(h) for Power and Antenna Height Limits.
`Limit: 2 W ERP = +33 dBm ERP (max)
`Measured: +10.43 dBm
`Margin: 22.57 dB (PASS)
`
`Figure 4. Transmitter Power
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`The Si446x family of chips provides for very fine control of the output power when operating near its maximum
`output power level (e.g. +20 dBm for the Si4463/64 chip, +13 to +14 dBm for the Si4461 chip, and +10 dBm for the
`Si4460 chip). The output power on the Si446x family of chips is adjusted by selecting the number of output device
`fingers that are enabled (as set by the PA_PWR_LVL property).
`3.2. FCC Part 90.207 Types of Emissions
`The standard allows multiple types of emissions (i.e., modulation methods), including F1D = 2(G)FSK or 4(G)FSK.
`The data rate and deviation are not specified in the standard, except that the unit must additionally comply with the
`authorized bandwidth and applicable spectral emission mask.
`All measurements within this document were taken with 2GFSK, data rate = 2.4 kbps, and deviation = 2.0 kHz
`(unless noted otherwise). Compliance with certain requirements of the standard are heavily influenced by the
`selection of the modulation protocol; a greater margin of compliance may be obtained with a different selection of
`modulation protocol (e.g., lowering the data rate and/or deviation).
`3.3. FCC Part 90.209 (b)(5) Bandwidth Limitations
`The permissible bandwidth is specified in FCC Part 90.209(b)(5). Within the 406-512 MHz band, the permissible
`authorized bandwidths are 6 kHz, 11.25 kHz, or 20 kHz. The standard does not provide clear guidance on the
`measurement method used to verify the bandwidth of the signal. In the absence of such guidance, the
`measurements shown below demonstrate the occupied bandwidth using the 99% power calculation method.
`It is self-evident that any desired value of occupied bandwidth may be obtained by the appropriate selection of data
`rate and/or deviation. The plots shown here demonstrate regulatory compliance for a variety of selected
`modulation protocols, but they should not be construed as the only possible modulation protocols that achieve
`compliance. It is ultimately the responsibility of the user to select the data rate and deviation so as to maintain
`compliance with bandwidth limitations, as well as the Spectral Emissions Mask requirements of Part 90.210.
`Allowance must also be made to maintain compliance in the presence of the frequency stability limits of FCC Part
`90.213.
`The measured occupied bandwidth (99.0%) for a modulation protocol of 2GFSK, DR=2.4 kbps, Deviation=2.0 kHz
`is shown in Figure 5. The Si446x family of chips complies with the requirements of FCC Part 90.209(b)(5) for
`Bandwidth Limitations for this selected modulation protocol.
`Limit: 6 kHz / 11.25 kHz / 20 kHz
`Measured: 5.27 kHz
`Margin: 0.73 kHz (PASS)
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`Figure 5. Occupied Bandwidth (2GFSK DR=2.4 kbps Dev=2.0 kHz)
`The measured occupied bandwidth (99.0%) for a modulation protocol of 2GFSK, DR=3.6 kbps, Deviation=3.0 kHz
`is shown in Figure 6. The Si446x family of chips complies with the requirements of FCC Part 90.209(b)(5) for
`Bandwidth Limitations for this selected modulation protocol.
`Limit: 6 kHz / 11.25 kHz / 20 kHz
`Measured: 7.76 kHz
`Margin: 3.49 kHz (PASS)
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`Figure 6. Occupied Bandwidth (2GFSK DR=3.6 kbps Dev=3.0 kHz)
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`The measured occupied bandwidth (99.0%) for a modulation protocol of 2GFSK, DR=4.8 kbps, Deviation=4.0 kHz
`is shown in Figure 7. The Si446x family of chips complies with the requirements of FCC Part 90.209(b)(5) for
`Bandwidth Limitations for this selected modulation protocol.
`Limit: 6 kHz / 11.25 kHz / 20 kHz
`Measured: 10.29 kHz
`Margin: 0.96 kHz (PASS)
`
`Figure 7. Occupied Bandwidth (2GFSK DR=4.8 kbps Dev=4.0 kHz)
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`3.4. FCC Part 90.210 Emission Masks
`The allowed level of spectral emissions is specified in FCC Part 90.210. Compliance is required with a variety of
`emissions masks, depending upon the frequency band of operation and the channel bandwidth.
`3.4.1. Emission Mask C
`Equipment designed to operate with a 25 kHz channel bandwidth must meet the requirements of Emission Mask
`C. The limits of Mask C are defined in "2.4.1. Emission Mask C" and are shown in graphical form in Figure 1.
`Multiple measurements were taken and are summarized below. The plots demonstrate the ability of Si446x chips to
`readily comply with the emissions mask on the great majority of channels (i.e., channels unaffected by spurious
`sidebands). The plots further illustrate the expected level of performance on those limited number of affected
`channels. The spectrum analyzer was configured for:
`Detector Mode = Peak, ResBW = 100 Hz, VidBW = 300 Hz
`Max Hold
`Amplitude correction = 20.5 dB (0.5 dB for cable loss, 20 dB to emulate External PA)
`The measured spectral emissions mask at 458.0 MHz in CW mode is shown in Figure 8. The Si446x family of
`chips complies with the requirements of FCC Part 90.210(c) for Spectral Emission Mask C at this frequency. This is
`an example of the performance on the great majority of frequencies that are not affected by spurious sidebands.
`
`Figure 8. Emission Mask C (Pout = +10dBm, 458.0M, CW)
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`The measured spectral emissions mask at 458.0 MHz in the presence of modulation is shown in Figure 9. The
`selected modulation protocol was 2GFSK B*T=0.5 DR=2.4 K Dev=2.0 K. The Si446x family of chips complies with
`the requirements of FCC Part 90.210(c) for Spectral Emission Mask C at this frequency. This is a further example
`of the compliant performance on most frequencies.
`
`Figure 9. Emission Mask C (Pout=+10dBm, 458.0M, 2GFSK DR=2.4K Dev=2.0K)
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`The measured spectral emissions mask at 457.50625 MHz in CW mode is shown in Figure 10. The frequency of
`F=457.5 MHz is calculated as an affected channel using Equation 1 with N=122 and Fxtal = 30.0 MHz; the
`frequency chosen here is one channel (6.25 kHz) away and results in the spurious sidebands “walking out” from
`the carrier as the frequency offset is increased. As the selected operating frequency is moved further away from
`the exact spurious frequency, the spurious sidebands also appear at greater frequency offsets and are rapidly
`attenuated by the filtering action of the PLL loop bandwidth. Thus it is advantageous to reduce the loop bandwidth
`to improve the attenuations of these signals; the performance shown in Figure 10 is with the chip configured for a
`reduced PLL loop bandwidth of ≈50 kHz. The Si446x family of chips complies with the requirements of FCC Part
`90.210(c) for Spectral Emission Mask C in CW mode at this frequency, but with reduced margin. Measurement in
`CW mode is the worst case condition as the energy in the sidebands is “spread” when modulation is applied.
`
`Figure 10. Emission Mask C (Pout=+10 dBm, 457.50625M, CW)
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`3.4.2. Emission Mask D
`Equipment designed to operate with a 12.5 kHz channel bandwidth must meet the requirements of Emission
`Mask D. The limits of Mask D are defined in "2.4.2. Emission Mask D" and are shown in graphical form in Figure 2.
`Multiple measurements were taken and are summarized below. The plots demonstrate the ability of Si446x chips to
`readily comply with the emissions mask on the great majority of channels (i.e., channels unaffected by spurious
`sidebands). The plots further illustrate the expected level of performance on those limited number of affected
`channels. The spectrum analyzer was configured for:
`Detector Mode = Peak, ResBW = 100 Hz, VidBW = 300 Hz
`Max Hold
`Amplitude correction = 20.5 dB (0.5 dB for cable loss, 20 dB to emulate External PA)
`The measured spectral emissions mask at 458.0 MHz in CW mode is shown in Figure 11. The Si446x family of
`chips complies with the requirements of FCC Part 90.210(d) for Spectral Emission Mask D at this frequency. This is
`an example of the performance on the great majority of frequencies that are not affected by spurious sidebands.
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`Figure 11. Emission Mask D (Pout=+10 dBm, 458.0M, CW)
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`The measured spectral emissions mask at 458.0 MHz in the presence of modulation is shown in Figure 12. The
`selected modulation protocol was 2GFSK B*T=0.5 DR=2.4K Dev=2.0K. The Si446x family of chips complies with
`the requirements of FCC Part 90.210(d) for Spectral Emission Mask D at this frequency. This is a further example
`of the compliant performance on most frequencies.
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`Figure 12. Emission Mask D (Pout=+10dBm, 458.0M, 2GFSK DR=2.4K Dev=2.0K)
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`AN866
`The measured spectral emissions mask at 457.50625 MHz in CW mode is shown in Figure 13. The frequency of
`F=457.5 MHz is calculated as an affected channel using Equation 1 with N=122 and Fxtal = 30.0 MHz; the
`frequency chosen here is one channel (6.25 kHz) away and results in the spurious sidebands “walking out” from
`the carrier as the frequency offset is increased. As the selected operating frequency is moved further away from
`the exact spurious frequency, the spurious sidebands also appear at greater frequency offsets and are rapidly
`attenuated by the filtering action of the PLL loop bandwidth. Thus it is advantageous to reduce the loop bandwidth
`to improve the attenuations of these signals; the performance shown in Figure 13 is with the chip configured for a
`reduced PLL loop bandwidth of ≈50 kHz. Measurement in CW mode is the worst case condition as the energy in
`the sidebands is “spread” when modulation is applied. Therefore, this demonstrates the ability of Si446x chips to
`comply with the requirements of FCC Part 90.210(d) for Spectral Emission Mask D on all frequencies other than
`the calculated affected channels.
`
`Figure 13. Emission Mask D (Pout=+10dBm, 457.50625M, CW)
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`The measured spectral emissions mask when tuned exactly to an affected channel (e.g., 457.5 MHz) is shown in
`Figure 14 for a modulation protocol of 2GFSK B*T=0.5 DR=2.4 K Dev=2.0 K. The frequency of F=457.5 MHz is
`calculated as an affected channel using Equation 1 with N=122 and Fxtal = 30.0 MHz. The instantaneous
`frequency deviation of the modulation signal gives rise to spurious sideband artifacts that fall near the deepest
`notch of the spectral mask. As a result, the Si446x family of chips fails to comply with the requirements of FCC Part
`90.210(d) for Spectral Emission Mask D on this limited set of affected frequencies, as calculated by Equation 1.
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`Figure 14. Emission Mask (Pout=+10 dBm, 457.5 M, 2GFSK DR=2.4 K Dev=2.0 K)
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`3.4.3. Emission Mask E
`Equipment designed to operate with a 6.25 kHz channel bandwidth must meet the requirements of Emission
`Mask E. The limits of Mask E are defined in "2.4.3. Emission Mask E" and are shown in graphical form in Figure 3.
`Multiple measurements were taken and are summarized below. The plots demonstrate the ability of Si446x chips to
`readily comply with the emissions mask on the great majority of channels (i.e., channels unaffected by spurious
`sidebands). The plots further illustrate the expected level of performance on those limited number of affected
`channels. The spectrum analyzer was configured for:
`Detector Mode = Peak, ResBW = 100 Hz, VidBW = 300 Hz
`Max Hold
`Amplitude correction = 20.5 dB (0.5 dB for cable loss, 20 dB to emulate External PA)
`The measured spectral mask at 458.0 MHz in CW mode is shown in Figure 15. The Si446x family of chips
`complies with the requirements of FCC Part 90.210(e) for Spectral Emission Mask E at this frequency. This is an
`example of the performance on the great majority of frequencies that are not affected by spurious sidebands.
`
`Figure 15. Emission Mask E (Pout=+10dBm, 458.0M, CW)
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`The measured spectral emissions mask at 458.0 MHz in the presence of modulation is shown in Figure 16. Due to
`the narrower authorized bandwidth for operation with Mask E, the selected modulation protocol was reduced to
`2GFSK B*T=0.5 DR=2.0 K Dev=1.0 K. The Si446x family of chips complies with the requirements of FCC Part
`90.210(e) for Spectral Emission Mask E at this frequency. This is a further example of the compliant performance
`on most frequencies.
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`Figure 16. Emission Mask E (Pout=+10 dBm, 458.0M, 2GFSK DR=2.0 K Dev=1.0 K)
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`The measured spectral emissions mask when tuned exactly to an affected channel (e.g., 457.5 MHz) is shown in
`Figure 17 for a modulation protocol of 2GFSK B*T=0.5 DR=2.0K Dev=1.0 K. The frequency of F=457.5 MHz is
`calculated as an affected channel using Equation 1 with N=122 and Fxtal = 30.0 MHz. The instantaneous
`frequency deviation of the modulation signal gives rise to spurious sideband artifacts that fall near the deepest
`notch of the spectral mask. However, these spurious sidebands are low enough that the Si446x family of chips
`remains in compliance with the requirements of FCC Part 90.210(e) for Spectral Emission Mask E on this limited
`set of affected frequencies, as calculated by Equation 1.
`
`Figure 17. Emission Mask E (Pout =+10 dBm, 457.5 M, 2GFSK DR=2.0K Dev=1.0K)
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