`obvious under 35 U.S.C. § 103 over Cade in view of Soper
`
`
`Prior Art Cited in this Chart:
`U.S. Patent No. 4,599,792 to Cade et al. (“Cade”)
`R.B. Soper (Mechanical Damage – Its Role in Silicon Surface Preparation, in
`Silicon Device Processing, Vol. 13 (1970)) (“Soper”)
`
`
`Cade in view of Soper
`
`“The mechanical substrate 68 of silicon is then
`anodically bonded to the quartz 66 by applying voltage
`to a voltage probe 84 with the seed substrate 80
`grounded.” Cade, 7:27-30.
`
`Figure 15 of Cade
`
`Claim Language
`Claim 9
`The method of claim 1,
`further including an
`additional step, after the
`step of attaching and
`before the step of
`etching, of fixing the
`second substrate to an
`etching support that is
`resistant to attack by an
`etchant.
`
`
`
`
`“The etch-back of the seed substrate 80 is performed
`with hydrofluoric-nitric-acetic acid (HNA) in the
`proportions of 1:3:8. The etchant HNA is an isotropic
`etch and attacks heavily doped p+ or n+ silicon.
`However, it does not appreciably attack silicon doped
`below the level of 1018 /cm3. The etch stopping
`characteristics are improved by the p+ /n junction at the
`interface 82.” Cade, 7:31-37.
`
`Figure 16 of Cade
`
`
`
`
`“In co-planar lapping the wafers are normally waxed to
`a plano, circular disk giving greater protection to the
`wafer.” Soper, at 415.
`
`Figure 2 of Soper, at 418.
`
`
`
`
`
`1
`
`Petitioner Samsung - SAM1020
`
`
`
`
`
`
`
`
`
`Claim Language
`
`
`
`
`
`Cade in view of Soper
`
`
`
`2
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