Takahashi anticipates claims 1-8, 11-16, and 18 of U.S. Patent No. 5,591,678 to
`Bendik et al. (“the ʼ678 Patent”) under 35 U.S.C. § 102
`
`
`Prior Art Cited in this Chart:
`U.S. Patent No. 5,347,154 to Takahashi et al. (“Takahashi”)
`
`
`Claim Language
`Claim 1
`A method of fabricating
`a microelectronic device,
`comprising the steps of:
`
`furnishing a first
`substrate having an
`etchable layer, an etch-
`stop layer overlying the
`etchable layer, and a
`wafer overlying the etch-
`stop layer;
`
`Takahashi
`
`
`“The present invention relates to a semiconductor
`device and a process for manufacturing the same and,
`more particularly, to a semiconductor substrate having
`a structure composed of a thin film laminated layer
`intensively formed with transistor elements and a light
`valve device having said semiconductor substrate, a
`liquid crystal layer and an opposed substrate integrated
`with one another.” 1:7-14.
`“First of all, the single crystal silicon plate and the
`tentative substrate 82 are prepared.” 14:35-36.
`
`“Below this surface insulating film 3, there is arranged
`a single crystal semiconductor Thin film 4.” 5:54-56.
`
`“For forming the insulating film, a silicon nitride film
`may be deposited at first as a surfacing treatment on the
`tentative silicon substrate, and then the silicon dioxide
`layer may be deposited by the CVD.” 7:35-38.
`
`“The silicon nitride layer thus deposited as the
`surfacing treatment performs as an etching stopper at a
`later step.” 7:42-44.
`
`Figure 11
`
`forming a
`
`
`
`
`
`
`“This single crystal semiconductor thin film 4 is
`1
`
`Petitioner Samsung - SAM1016
`
`
`Bendik et al. (“the ʼ678 Patent”) under 35 U.S.C. § 102
`
`
`Prior Art Cited in this Chart:
`U.S. Patent No. 5,347,154 to Takahashi et al. (“Takahashi”)
`
`
`Claim Language
`Claim 1
`A method of fabricating
`a microelectronic device,
`comprising the steps of:
`
`furnishing a first
`substrate having an
`etchable layer, an etch-
`stop layer overlying the
`etchable layer, and a
`wafer overlying the etch-
`stop layer;
`
`Takahashi
`
`
`“The present invention relates to a semiconductor
`device and a process for manufacturing the same and,
`more particularly, to a semiconductor substrate having
`a structure composed of a thin film laminated layer
`intensively formed with transistor elements and a light
`valve device having said semiconductor substrate, a
`liquid crystal layer and an opposed substrate integrated
`with one another.” 1:7-14.
`“First of all, the single crystal silicon plate and the
`tentative substrate 82 are prepared.” 14:35-36.
`
`“Below this surface insulating film 3, there is arranged
`a single crystal semiconductor Thin film 4.” 5:54-56.
`
`“For forming the insulating film, a silicon nitride film
`may be deposited at first as a surfacing treatment on the
`tentative silicon substrate, and then the silicon dioxide
`layer may be deposited by the CVD.” 7:35-38.
`
`“The silicon nitride layer thus deposited as the
`surfacing treatment performs as an etching stopper at a
`later step.” 7:42-44.
`
`Figure 11
`
`forming a
`
`
`
`
`
`
`“This single crystal semiconductor thin film 4 is
`1
`
`Petitioner Samsung - SAM1016
`
`
`
`Claim Language
`microelectronic circuit
`element in the exposed
`side of the wafer of the
`first substrate opposite to
`the side overlying the
`etch-stop layer;
`
`Takahashi
`formed not only with a channel forming region 5 for
`each transistor element but also with a source region 6
`and a drain region 7 which merge into the channel
`forming region 5. Below the single crystal
`semiconductor thin film 4, there is arranged through a
`gate oxide layer 8 an intermediate electrode film which
`forms a gate electrode 9 of the transistor element.”
`5:56-63.
`
`“Below said intermediate electrode film, moreover,
`there is arranged a back layer film 10. This back layer
`film 10 is formed with contact holes which extend to
`the source region 6 and the drain region 7 so that a
`source electrode 11 and a drain electrode 12 are
`arranged therethrough.” 5:63-68.
`
`Figure 12
`
`
`
`
`“At a step shown in FIG. 14, moreover, the support
`substrate 15 is adhered to the surface of the applied
`adhesive film 14.” 16:13-15.
`
`“By heat treatment in this state, the solvent contained in
`the adhesive film 14 is evaporated away, and the fusion
`of the silicon dioxide particle advances until the
`support substrate 15 and the SOI substrate 81 are
`rigidly adhered to each other in face-to-face relation.”
`16:18-23.
`
`Figure 14
`
`
`
`attaching the wafer of the
`first substrate to a second
`substrate; and
`
`
`
`2
`
`
`
`Claim Language
`
`
`
`Takahashi
`
`
`
`
`“For forming the insulating film, a silicon nitride film
`may be deposited at first as a surfacing treatment on the
`tentative silicon substrate, and then the silicon dioxide
`layer may be deposited by the CVD. This CVD silicon
`dioxide layer is excellent in adhesiveness to the
`semiconductor substrate so that the semiconductor
`substrate can be thermally bonded in a fixed manner.
`The silicon nitride layer thus deposited as the surfacing
`treatment performs as an etching stopper at a later step.
`At the aforementioned fourth step, the tentative
`substrate can be etched off by using the silicon nitride
`layer as the etching stopper. As a result, a flat
`insulating film is exposed to the outside.” 7:35-47.
`
`“Specifically, due to the difference in the etching rate
`between the silicon and the silicon nitride, the etching
`removal of the tentative substrate 82 of silicon
`substantially ends at the step reaching the silicon nitride
`film. Thus, the semiconductor device shown in FIG. 1
`can be finally obtained. Incidentally, the arrangement
`shown in FIG. 14 is inverted upside-down from that
`shown in FIG. 1 so that it may be easily understood.”
`16:43-47.
`
`
`
`etching away the
`etchable layer of the first
`substrate down to the
`etch-stop layer.
`
`
`
`3
`
`
`
`Takahashi
`
`
`
`Figure 1
`
`Claim Language
`
`Figure 14
`
`
`
`Claim 2
`The method of claim 1,
`further including an
`additional step, after the
`step of etching, of
`patterning the etch-stop
`layer.
`
`
`
`
`
`“The thin film laminated layer 1 is partially formed
`with a through hole 16. This through hole 16 can be
`formed by etching the field insulated film 13
`selectively.” 9: 21-23.
`
`Figure 3
`
`Claim 3
`
`
`
`
`
`
`
`
`4
`
`
`
`Claim Language
`The method of claim 2,
`further including an
`additional step, after the
`step of patterning, of
`forming an electrical
`connection to the
`microelectronic circuit
`element through the
`patterned etch-stop layer
`and through the wafer.
`
`Takahashi
`“The surface insulating film 3 is formed thereover with
`a pad electrode 17 for connecting the drain electrode 12
`electrically through the through hole 16. The pad
`electrode 17 is provided for electric connection
`between the semiconductor device and an external
`circuit and is wire-bonded, for example. For this
`purpose, the pad electrode is given a size of about 100
`μm square far larger than that of the transistor element.
`Thus, the pad electrode occupying an especially large
`area is separated from the back wiring of the integrated
`circuit and formed on the surface so that the area of the
`back can be effectively exploited.” 9:24-36.
`
`Figure 3
`
`
`
`
`
`“The surface insulating film 3 is formed thereover with
`a pad electrode 17 for connecting the drain electrode 12
`electrically through the through hole 16. The pad
`electrode 17 is provided for electric connection
`between the semiconductor device and an external
`circuit and is wire-bonded, for example. For this
`purpose, the pad electrode is given a size of about 100
`μm square far larger than that of the transistor element.
`Thus, the pad electrode occupying an especially large
`area is separated from the back wiring of the integrated
`circuit and formed on the surface so that the area of the
`back can be effectively exploited.” 9:24-36.
`
`
`
`Claim 4
`The method of claim 2,
`further including an
`additional step, after the
`step of patterning, of
`forming an electrical
`connection to the wafer
`through the patterned
`etch-stop layer.
`
`
`
`5
`
`
`
`Takahashi
`
`
`
`Figure 3
`
`Claim Language
`
`Claim 5
`The method of claim 1,
`wherein the etchable
`layer is silicon, the etch-
`stop layer is silicon
`dioxide, and the wafer is
`single-crystal silicon.
`
`Claim 6
`The method of claim 1,
`wherein the second
`substrate contains a
`second microelectronic
`circuit element.
`
`
`
`
`
`
`
`“For forming the insulating film, a silicon nitride film
`may be deposited at first as a surfacing treatment on the
`tentative silicon substrate, and then the silicon dioxide
`layer may be deposited by the CVD. This CVD silicon
`dioxide layer is excellent in adhesiveness to the
`semiconductor substrate so that the semiconductor
`substrate can be thermally bonded in a fixed manner.
`The silicon nitride layer thus deposited as the surfacing
`treatment performs as an etching stopper at a later step.
`7:35-44.
`
`“Preferably at said first step, the semiconductor
`substrate made of single crystal silicon is thermally
`bonded at first to the tentative substrate of silicon
`through the insulating film of silicon dioxide.” 7:30-33.
`
`“Another effect is that the semiconductor device
`satisfying various applications can be remarkably easily
`manufactured by adding various electrodes to the
`exposed surface of the semiconductor device in
`accordance with the design specifications. For example,
`
`6
`
`
`
`Claim Language
`
`Takahashi
`the semiconductor device substrate for driving the light
`valve is obtained by forming a transparent electrode for
`defining the pixel, for example. Moreover, the DRAM
`can be easily manufactured by forming a capacity
`electrode. By forming an additional gate electrode,
`furthermore, it is possible to manufacture a
`semiconductor device which is composed of transistor
`elements having an excellent ON/OFF ratio.” 17:12-
`28.
`
`“Between said substrate 191 and a support substrate
`192 formed with a transparent electrode 197, there is
`formed an electrooptical substance layer 194.” 25:2-5.
`
`“The support substrate 192 is formed on its surface
`with the common electrode 197 made of a transparent
`conductive film.” 26:28-30.
`
`“In the present embodiment, the thin semiconductor
`film over the thin insulating film, from which the
`support substrate of the semiconductor device, is used
`as one substrate of the light valve device.” 24:62-65.
`
`“FIGS. 25(a) and 25(b) are sections showing a
`sixteenth embodiment according to the present
`invention, in which the semiconductor device is
`constructed as a light valve device.” 5:29-32.
`
`Figure 14
`
`
`
`7
`
`
`
`
`
`
`
`Claim Language
`
`Takahashi
`Figure 25(a) (inverted)
`
`Figure 25(b)
`
`
`
`Claim 7
`The method of claim 6,
`wherein the step of
`attaching includes the
`step of making an
`electrical contact from
`the microelectronic
`circuit element on the
`wafer of the first
`substrate to the second
`microelectronic circuit
`element on the second
`substrate.
`
`
`
`
`
`
`
`“As a result, this flat surface insulating film 3 can be
`easily subjected to a variety of additional treatments
`including at least the formation of electrodes, and the
`single crystal silicon thin film 4 can also be easily
`subjected, if desired, to an additional treatment.” 16:53-
`58.
`
`“As has been described hereinbefore, according to the
`present invention, the integrated circuit formed on the
`SOI substrate is transferred to the support substrate, and
`the tentative substrate portion of the SOI substrate is
`then removed so that the semiconductor device has its
`one face wired in advance and its other face exposed to
`the outside. This exposed face has a flat surface and is
`arranged just therebelow with the single crystal
`semiconductor thin film. Since the exposed face can be
`subjected to the additional treatment of forming
`8
`
`
`
`Claim Language
`
`
`
`Takahashi
`electrodes or wiring, the semiconductor device
`according to the present invention can be given the
`double-side wiring structure to raise an effect that its
`packaging density is improved far better than the prior
`art.” 16:59-17:4.
`
`“Another effect is that the semiconductor device
`satisfying various applications can be remarkably easily
`manufactured by adding various electrodes to the
`exposed surface of the semiconductor device in
`accordance with the design specifications. For example,
`the semiconductor device substrate for driving the light
`valve is obtained by forming a transparent electrode for
`defining the pixel, for example. Moreover, the DRAM
`can be easily manufactured by forming a capacity
`electrode. By forming an additional gate electrode,
`furthermore, it is possible to manufacture a
`semiconductor device which is composed of transistor
`elements having an excellent ON/OFF ratio.” 17:12-
`28.
`
`“Between said substrate 191 and a support substrate
`192 formed with a transparent electrode 197, there is
`formed an electrooptical substance layer 194.” 25:2-5.
`
`“The support substrate 192 is formed on its surface
`with the common electrode 197 made of a transparent
`conductive film.” 26:28-30.
`
`“In the present embodiment, the thin semiconductor
`film over the thin insulating film, from which the
`support substrate of the semiconductor device, is used
`as one substrate of the light valve device.” 24:62-65.
`
`“FIGS. 25(a) and 25(b) are sections showing a
`sixteenth embodiment according to the present
`invention, in which the semiconductor device is
`constructed as a light valve device.” 5:29-32.
`
`
`9
`
`
`
`Claim Language
`
`Figure 14
`
`Takahashi
`
`
`Figure 25(a) (inverted)
`
`Figure 25(b)
`
`
`
`
`
`Claim 8
`The method of claim 1,
`wherein the step of
`attaching includes the
`steps of placing a layer
`of epoxy between the
`second substrate and the
`
`
`
`
`
`
`
`“Preferably, said support layer 2 has a two-layer
`structure composed of an adhesive film 14 applied to
`the back layer film 10 and a support substrate 15
`fixedly adhered face-to-face by the adhesive film 14.”
`6:10-13.
`
`
`10
`
`
`
`Claim Language
`wafer portion of the first
`substrate, and degassing
`and curing the epoxy.
`
`Takahashi
`“A material to be used for the adhesive can be
`exemplified by a polyimide resin or an epoxy resin.”
`15-55:57.
`
`“The support substrate 15 may be formed in advance
`with through holes for releasing the gas which is
`generated during a heat treatment of the adhesive.”
`6:17-20.
`
`“Without such through holes, the gas produced in the
`course of thermally setting the adhesive film 14 would
`have no way of escape to make it difficult to adhere the
`uniform and rigid support substrate 15 fixedly in the
`face-to-face relation. If the produced gas is confined in
`the adhesive film 14 to form bubbles, it deteriorates the
`reliability of the semiconductor device. In order to
`eliminate this disadvantage, therefore, the degasifying
`through holes 15 are formed in advance in the support
`substrate 15 in accordance with the present
`embodiment.” 12:14-24.
`
`Figure 1
`
`Claim 11
`A method of fabricating
`a microelectronic device,
`comprising the steps of:
`furnishing a first
`substrate having an
`etchable layer, an etch-
`stop layer overlying the
`etchable layer, and a
`
`
`
`
`
`
`
`See, claim 1, supra.
`
`See, claim 1, supra.
`
`11
`
`
`
`Claim Language
`wafer overlying the etch-
`stop layer;
`forming a
`microelectronic circuit
`element in the exposed
`side of the wafer of the
`first substrate opposite
`the side overlying the
`etch-stop layer;
`attaching the wafer of the
`first substrate to a second
`substrate, the second
`substrate having a
`second microelectronic
`circuit element therein;
`making an electrical
`contact from the
`microelectronic circuit
`element in the wafer of
`the first substrate to the
`second microelectronic
`circuit element on the
`second substrate; and
`etching away the
`etchable layer of the first
`substrate down to the
`etch-stop layer; and
`forming an electrical
`connection to the
`microelectronic circuit
`element in the wafer of
`the first substrate
`through the etch-stop
`layer.
`
`Claim 12
`The method of claim 11,
`wherein the etchable
`layer is silicon, the etch-
`
`
`
`Takahashi
`
`See, claim 1, supra.
`
`See, claims 1 and 6, supra.
`
`See, claim 7, supra.
`
`See, claim 1, supra.
`
`See, claims 2 and 3, supra.
`
`
`See, claim 5, supra.
`
`12
`
`
`
`Claim Language
`stop layer is silicon
`dioxide, and the wafer is
`single-crystal silicon.
`Claim 13
`A method of fabricating
`a microelectronic device,
`comprising the steps of:
`furnishing a first
`substrate having a silicon
`etchable layer, a silicon
`dioxide etch-stop layer
`overlying the silicon
`layer, and a single-
`crystal silicon wafer
`overlying the etch-stop
`layer, the wafer having a
`front surface not
`contacting the silicon
`dioxide layer;
`forming a
`microelectronic circuit
`element in the front
`surface of the single-
`crystal silicon wafer;
`attaching the front
`surface of the single-
`crystal silicon wafer to a
`first side of a second
`substrate; and
`etching away the silicon
`etchable layer down to
`the silicon dioxide etch-
`stop layer using an
`etchant that attacks the
`silicon layer but not the
`silicon dioxide layer.
`
`Takahashi
`
`
`See, claim 1, supra.
`
`See, claims 1 and 5, supra.
`
`See, claim 1, supra.
`
`See, claim 1, supra.
`
`See, claim 1, supra.
`
`“Specifically, due to the difference in the etching rate
`between the silicon and the silicon nitride, the etching
`removal of the tentative substrate 82 of silicon
`substantially ends at the step reaching the silicon nitride
`film.” 16:43-47.
`
`Figure 1
`
`
`
`13
`
`
`
`Claim Language
`
`
`
`Takahashi
`
`
`
`
`
`See, claim 2, supra.
`
`
`See, claim 3, supra.
`
`Claim 15
`The method of claim 14,
`further including an
`additional step, after the
`step of patterning, of
`forming an electrical
`connection to the
`microelectronic circuit
`element through the
`patterned etch-stop layer
`and through the wafer.
`Claim 16
`The method of claim 14,
`further including an
`additional step, after the
`step of patterning, of
`forming an electrical
`connection to the wafer
`through the patterned
`etch-stop layer.
`Claim 18
`
`The method of claim 13, See, claim 8, supra.
`14
`
`
`See, claim 4, supra.
`
`Claim 14
`The method of claim 13,
`further including an
`additional-step, after the
`step of etching, of
`patterning the etch-stop
`layer.
`
`
`
`
`
`Takahashi
`
`Claim Language
`wherein the step of
`attaching includes the
`steps of placing a layer
`of epoxy between the
`second substrate and the
`front surface of the
`single-crystal silicon
`wafer, and
`degassing and curing the
`epoxy.
`
`
`
`
`15
Accessing this document will incur an additional charge of $.
After purchase, you can access this document again without charge.
Accept $ Charge
Still Working On It
This document is taking longer than usual to download. This can happen if we need to contact the court directly to obtain the document and their servers are running slowly.
Give it another minute or two to complete, and then try the refresh button.
A few More Minutes ... Still Working
It can take up to 5 minutes for us to download a document if the court servers are running slowly.
Thank you for your continued patience.
This document could not be displayed.
We could not find this document within its docket. Please go back to the docket page and check the link. If that does not work, go back to the docket and refresh it to pull the newest information.
Your account does not support viewing this document.
You need a Paid Account to view this document. Click here to change your account type.
Your account does not support viewing this document.
Set your membership
status to view this document.
With a Docket Alarm membership, you'll
get a whole lot more, including:
- Up-to-date information for this case.
- Email alerts whenever there is an update.
- Full text search for other cases.
- Get email alerts whenever a new case matches your search.
One Moment Please
The filing “” is large (MB) and is being downloaded.
Please refresh this page in a few minutes to see if the filing has been downloaded. The filing will also be emailed to you when the download completes.
Your document is on its way!
If you do not receive the document in five minutes, contact support at support@docketalarm.com.
Sealed Document
We are unable to display this document, it may be under a court ordered seal.
If you have proper credentials to access the file, you may proceed directly to the court's system using your government issued username and password.
Access Government Site
