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IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`Application
`;
`Number:
`
`I2 4
`/ 97’65
`
`2
`
`Tiling or 371 (C)
`Date:
`
`07-04-2009
`
`lApph°a“°“
`
`§EXammer
`ENHIHCI
`
`Confirmation
`Number:
`
`$6944
`
`_
`
`Customer
`Number:
`
`Status:
`
`130232
`
`3N0" Fmal Am“
`Mailed
`
`Status Date:
`
`06-18-2013
`
`iELECTRON1C
`j
`
`Location Date:
`
`iEarliest
`ppubfication NO:
`
`§US 2010-0171224 A1
`
`3A“°mey Dmket §0907043DSA3L.US
`—
`Number:
`
`iEarliest
`‘
`lPublicati0n Date:
`
`3
`
`-
`07 08
`
`-2 1
`0 0
`
`iClass / Subclass: 0257/773
`
`iPatent Number:
`
`iFirst Named
`Inventor:
`
`iGlenn J. Leedy , Parkland, FL
`(US)
`
`ilssue Date of
`Patent:
`
`~;
`'
`nmy Statub
`
`11
`
`jsma
`
`iAIA (First
`I
`jlnventor to File):
`
`§NO
`1
`
`Title of Invention:
`
`Three dimensional structure memory
`
`RESPONSE
`
`The following Remarks are responsive to the prior Office Action.
`
`SAMSUNG ET AL. EXHIBIT 1021
`Page 1 of 3
`
`

`
`REMARKS
`
`The prior Office Action has been carefully considered. In response thereto, the claims
`
`have been amended as set forth above. Reconsideration in View of the foregoing amendments
`
`and the following Remarks is respectfully requested.
`
`The undersigned thanks Examincr Joy for courtcsics cxtcndcd during the interview of
`
`8/29/2013. Agreement was reached that the combination of Bertin and Kato does not teach a
`
`substantially flexible cz'rcuz'r layer as claimed in the independent claims and that the rejection of
`
`claims based on the combination of Bertin and Kato would be Withdrawn.
`
`A explained during the interview, a. substantiallv tlexible semiconductor substrate is a
`
`i’ié3(f€fSSziZ}”_V but not a ,sz,g;'fit;i'ie:rzt condition fer a substantially flexible circuit layer. A substantially
`
`tlexible semiconductor substrate may lie achieved by grinding until consiclerably thin, fur
`
`exainple to a thickness of less than 56 microns, and polishing the resulting surface. As noted in
`
`the rej eetiovn, the piiimary rei’ei'ence Bertin tails to
`
`pclisliingi
`
`Kato teaches grinding the backside of a circuit layer and polishing the resulting surface.
`
`The semiconductor substrate itself {part of the circuit layer) may be argued to he SUl3Sl3.llEl‘<llly
`
`tlexible. However‘, there is no ‘teacliing or suggestion that the ciinruiz layer as a whole is
`
`substaiitially ‘flexible. The circuit layer may be l7clbrica‘tecl in at manner that unclees or defeats
`
`flexibility cf the semiconductor substrate.
`
`SAMSUNG ET AL. EXHIBIT 1021
`Page 2 of 3
`
`

`
`l\/lere particularly, a circuit layer requires one or more dielectric layers. Dielectric
`
`material has an asseeiated level of stress. For a circuit layer to he sulistanti-ally flexible,
`
`Applica.nt has found that the dielectric 1‘na.teria,l must have low tensile st *ess, fer‘ e.xample, 5 K llig
`
`dynes/tin?‘ tensi Ee. Kate does not contain any teaching er suggestion of the circuit layer being
`
`flexible. Siinilarly, Bertin does net contain any such teaching 01‘ suggestion.
`
`Withdrawal of the rejection of at least those claims rejected based solely on the
`
`combination of Bertin and Kato is respectfully requested.
`
`Respectfiilly submitted,
`
`/MichaelJUre/
`
`Michael J. Ure, Reg. 33,089
`
`Dated: 9/26/2013
`
`SAMSUNG ET AL. EXHIBIT 1021
`Page 3 of 3

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