(12) United States Patent
`Leedy
`
`(10) Patent No.:
`(45) Date of Patent:
`
`US 7,485,571 B2
`*Feb. 3, 2009
`
`US007485571B2
`
`(56)
`
`References Cited
`|U.S. PATENT DOCUMENTS
`2,915,722 A 12/1959 Foster ........................ 336/115
`(Continued)
`FOREIGN PATENT DOCUMENTS
`
`DE
`
`-
`
`-
`
`3/1983
`32 33 195
`(Continued)
`OTHER PUBLICATIONS
`“IC Tower Patent. Simple Technology Receives Patent on the IC
`Tower, a Stacked Memory Technology,” http://www.simpletech.
`com/whatsnew/memory/(a)60824.htm (1998).
`(Continued)
`Primary Examiner—Zandra V. Smith
`Assistant Examiner—Pamela E Perkins
`(74) Attorney, Agent, or Firm—Rope & Gray LLP, Jeffrey C.
`Aldridge; Matthew S. Bertenthal
`(57)
`ABSTRACT
`
`General purpose methods for the fabrication of integrated
`circuits from flexible membranes formed of very thin low
`stress dielectric materials, such as silicon dioxide or silicon
`nitride, and semiconductor layers. Semiconductor devices are
`formed in a semiconductor layer of the membrane. The semi
`conductor membrane layer is initially formed from a sub
`strate of standard thickness, and all but a thin surface layer of
`the substrate is then etched or polished away. In another
`version, the flexible membrane is used as support and elec
`trical interconnect for conventional integrated circuit die
`bonded thereto, with the interconnect formed in multiple
`layers in the membrane. Multiple die can be connected to one
`such membrane, which is then packaged as a multi-chip mod
`ule. Other applications are based on (circuit) membrane pro
`cessing for bipolar and MOSFET transistor fabrication, low
`impedance conductor interconnecting fabrication, flat panel
`displays, maskless (direct write) lithography, and 3DIC ?ab
`rication.
`
`198 Claims, 64 Drawing Sheets
`
`(54) METHOD OF MAKING AN INTEGRATED
`CIRCUIT
`(75) Inventor: Glenn J Leedy, Saline, MI (US)
`(73) Assignee: Elm Technology Corporation, Saline,
`MI (US
`(US)
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 98 days.
`This patent is subject to a terminal dis-
`
`(*) Notice:
`
`claimer.
`
`21) Appl. No.: 10/665,757
`(21) App
`s
`(22) Filed:
`Sep.19, 2003
`(65)
`Prior Publication Data
`
`|US 2005/0176174 A1
`
`Aug. 11, 2005
`-
`- -
`Related U.S. Application Data
`(60) Continuation of application No. 09/775,597, filed on
`Feb. 5, 2001, now Pat. No. 6,682.981, which is a con
`tinuation of application No. 09/027,959, filed on Feb.
`23, 1998, now abandoned, which is a division of appli-
`? No 08/850,749 ???d on May 2, 1997, now Pat
`-
`-
`? s
`
`???
`
`... , ????
`No. 5,985,693, which is a continuation of application
`No. 08/315,905, filed on Sep. 30, 1994, now Pat. No.
`5,869,354, and a division of application No. 07/865,
`412, filed on Apr. 8, 1992, now Pat. No. 5,354,695.
`(51) Int. Cl.
`(2006.01)
`H0 HL 2 H/4763
`200 6. 01
`H0 HL 21/06)
`(
`.01)
`(2006.01)
`H0 HL 2 H/76
`(52) U.S. Cl. ............................. 438/626; 438/6: 438/53;
`438/406
`(58) Field of Classification Search ..................... 4386,
`438/17, 53. 406, 411, 479, 626
`See application file for complete search history.
`
`20
`
`
`
`% %
`
`18
`
`Page 1 of 97
`
`SAMSUNG ET AL. EXHIBIT 1089
`Samsung et al. v. Elm 3DS Innovations, LLC
`IPR2016-00387
`
`

`

`US 7,485,571 B2
`
`Page 2
`
`
`
`4/1991 Keogh et a1.
`......... .. 324/207.17
`4/1991 Allen et al.
`438/659
`
`6/1991 Leedy ....................... .. 29/846
`7/1991 Leedy ................... .. 324/158F
`9/1991 Ce11er et 31.
`11/1991 K0eh1er
`12/1991 Greenwald eta1.
`........... .. 437/3
`
`12/1991 13111116163131.
`156/647
`.......... .. 438/788
`3/1992 Machado eta1.
`
`4/1992 Leedy ....................... .. 29/832
`5/1992 Mauger
`.......... .. 148/33.2
`5/1992 Kess1er et 31.
`5/1992 Eichelberger .............. .. 357/75
`5/1992 Chan eta1.
`................ .. 438/234
`5/1992 531311110
`6/1992 s1iwa eta1.
`7/1992 Miner
`.................... N 361/393
`7/1992
`.438/477
`9/1992
`9/1992
`10/1992 Henagen Jr. e131. N
`11/1992 Mumoka et 31.
`12/1992 Moketa1.
`2/1993 1101163131.
`4/1993 Zimmerman ............... .. 445/24
`7/1993 Leedy .......... N
`. 324/158
`.
`7/1993 Rubinstein eta1.
`361/785
`8/1993 Bower et a1.
`.............. .. 228/193
`8/1993 Ling1ain etal.
`9/1993 Furtek eta1.
`11/1993 Bantien
`11/1993 Fueki eta1.
`............. .. 437/183
`11/1993 Bureau eta1.
`437/209
`.
`12/1993 1363111116131.
`.437/209
`12/1993 sanders ..... N
`.257/758
`12/1993 Tuckerman N
`1/1994 Chebi et a1.
`............... .. 427/574
`2/1994 Bayer et 31.
`2/1994 Nakanishi et a1.
`2/1994 Mos1eh1
`3/1994 Arima et 31.
`N 257/48
`6/1994 Leedy
`.437/225
`6/1994 wojnarowskl
`10/1994 Leedy .................... N 438/411
`10/1994 Hashiguchi et a1.
`11/1994 MacDonald
`1/1995 Goossen .... ..
`1/1995 Ne1son et a1.
`3/1995 Dasse et 31.
`4/1995 Fujii e131.
`................ N 257/419
`5/1995 Shimoji
`.
`.257/622
`6/1995 Miyake .
`.361/735
`6/1995 Finnila
`.437/208
`6/1995 Akagi et a1.
`324/239
`
`.
`7/1995 Yasohamaetal.
`324/240
`7/1995 Carson eta1.
`............... .. 365/63
`7/1995 Capps et 31.
`7/1995 Hauck eta1.
`9/1995 Davies
`.430/313
`9/1995 Leedy
`
`.437/203
`9/1995 Leedy .... N
`10/1995 Gurt1ereta1.
`............... .. 29/895
`11/1995 sachdev et 31.
`12/1995 Namse ..................... N 437/132
`1/1996 Clifton eta1.
`1/1996 Hsu
`2/1996 Gates ....................... .. 437/208
`3/1996 1361111163131.
`................ N 365/51
`4/1996 Leedy ....................... .. 430/30
`5/1996 Enomoto et 31.
`6/1996 Patiet al.
`..................... .. 430/5
`6/1996 Koskenmaki et al.
`..... .. 428/167
`7/1996 Frye et al.
`................. .. 437/209
`
`357/80
`N 428/334
`
`
`
`
`
`......... .. 437/183
`
`
`
`315/366
`. 156/630
`............. N 514/291
`
`
`
`................ .. 324/67
`
`5,008,619 A
`5,010,024 A
`5,020,219 A
`5,034,685 A
`5,051,326 A
`5,062,689 A
`5,070,026 A
`5,071,510 A
`5,098,865 A
`5,103,557 A
`5,110,373 A
`5,110,712 A
`5,111,278 A
`5,116,777 A
`5,117,282 A
`5,119,164 A
`5,130,894 A
`5,132,244 A
`5,144,142 A
`5,151,775 A
`5,156,909 A
`5,166,962 A
`5,169,805 A
`5,188,706 A
`5,203,731 A
`5,225,771 A
`5,227,959 A
`5,236,118 A
`5,240,458 A
`5,245,227 A
`5,259,247 A
`5,262,341 A
`5,262,351 A
`5,270,261 A
`5,273,940 A
`5,274,270 A
`5,279,865 A
`5,283,107 A
`5,284,796 A
`5,284,804 A
`5,293,457 A
`5,323,035 A
`5,324,687 A
`5,354,695 A
`5,358,909 A
`5,363,021 A
`5,385,632 A
`5385909 A
`5,399,505 A
`1113345893 E
`5,420,458 A
`5,424,920 A
`5,426,072 A
`5,426,363 A
`5,432,444 A
`5,432,729 A
`5,432,999 A
`5,434,500 A
`5,450,603 A
`5,451,489 A
`5,453,404 A
`5,457,879 A
`5,470,693 A
`5,476,813 A
`5,480,842 A
`5,481,133 A
`5,489,554 A
`5,502,667 A
`5,512,397 A
`5,514,628 A
`5,527,645 A
`5,529,829 A
`5,534,465 A
`
`US. PATENT DOCUMENTS
`
`8/1965 Farrand ~~~~~~~~~~~~~~~~~~~~ ~~ 336/115
`3,202,948 A
`3/1969 Patzeretal
`3,430,835 A
`2/1971 Lesk ........................ .. 438/113
`3,559,282 A
`2/1971 Burkhardt
`324/207.12
`3,560,364 A
`~~
`9/1971 Emmasingel
`~~ 29/577
`3,602,982 A
`10/1971 Medicus .............. ..
`48/11.5R
`3,615,901 A
`1/1972 Groschwiz
`3,636,358 A
`~~~~~~~~~~~~~~~ ~~ 156/17
`2/1973 Napolietal
`3,716,429 A
`12/1973 Krishna e1 al~ ~
`257/578
`3,777,227 A
`2/1975 Kuipers .... ..
`324/207.26
`3,868,565 A
`11/1975 Yerman
`~ 357%
`3,922,705 A
`1/1976 Goodman
`3,932,932 A
`12/1976 Wanlass ...................... .. 156/3
`3,997,381 A
`6/1977 Eisenberger
`4,028,547 A
`1/1978 Stein ........................ .. 438/411
`4,070,230 A *
`
`1/1979 Greenwood et al.
`29/580
`4,131,985 A
`2/1979 Hauser, Jr. et al.
`.... .. 438/792
`4,142,004 A
`4/1980 Schnableetal.
`4,196,232 A
`2/1981 Hoeberechts .............. .. 29/580
`4,251,909 A
`4/1981 Kubacki
`............ .. 118/723 MP
`4,262,631 A
`7/1983 Greschneretal.
`4,393,127 A
`7/1983 Shioya et al.
`............. .. 427/574
`4,394,401 A
`8/1983 Trenkler e1 al~
`~- 340/87032
`4401986 A
`11/1983 Thomas et al.
`.............. .. 29/572
`4,416,054 A
`2/1985 Shibata
`4,500,905 A
`7/1985 Kurosawa etal.
`4,528,072 A
`9/1985 Takagietal.
`.............. .. 156/614
`4,539,068 A
`1/1986 Takatsu e1 al~
`4,566,037 A
`4/1986 Reidet al.
`.......... ..
`4,585,991 A
`8/1986 Sobczak
`4,604,162 A
`~~~~~~~~~ ~~ 156/633
`9/1986 Yasumoto etal.
`4,612,083 A
`..
`264/40.1
`10/1986 Belangeret al.
`4,617,160 A
`.... .. 438/53
`4,618,397 A * 10/1986 Shimizu et al.
`4,618,763 A
`10/1986 Schmitz ................ .. 250/211R
`4622632 A
`11/1986 Tanimoto e1 al~
`4,663,559 A
`5/1987 Christensen .............. .. 313/336
`4,684,436 A
`8/1987 Bums et a1 ~
`216/65
`4,693,770 A
`9/1987 Hatada ..... ..
`. 156/151
`4,702,336 A
`10/1987 Seibert et al.
`427/583
`4,702,936 A
`10/1987 Maedaetal.
`180/197
`4,706,166 A
`11/1987 G0 ........... ..
`.361/403
`4,721,938 A *
`1/1988 Stevenson .................... .. 338/4
`4,724,328 A
`2/1988 Lischke
`4,761,681 A
`8/1988 Reid ........ ..
`.. 357/68
`
`~ 156/647
`4,784,721 A
`11/1988 Holmen et al
`3/1989 Freeman ................... .. 438/386
`4,810,673 A
`4,810,889 A
`3/1989 Yokomatsu etal.
`4,825,277 A
`4/1989 Mattox et al.
`............. .. 257/639
`4,835,765 A *
`5/1989 Bergmans et al.
`......... .. 370/291
`4,849,857 A
`7/1989 Butt etal.
`4,857,481 A
`8/1989 Tamet al.
`4,892,753 A
`1/1990 Wang etal~
`4,897,708 A
`1/1990 Clements
`4919749 A
`4/1990 Manger et a1 ~~~~~~~~~~~~~~ ~~ 216/12
`4,924,589 A
`5/1990 Leedy ......................... .. 438/6
`4,928,058 A
`5/1990 Williamson
`4934799 A
`6/1990 Chu
`4,939,568 A
`7/1990 Kato etal.
`............... .. 313/306
`4,940,916 A
`7/1990 Borelet al.
`
`~~ 324/20723
`4950987 A
`8/1990 Vranish etal.
`~
`.................. .. 428/220
`4,952,446 A
`8/1990 Lee et al.
`4,954,865 A
`9/1990 Rokos ...................... .. 257/378
`4,954,875 A
`9/1990 Clements
`4,957,882 A
`9/1990 Shinomiya ................. .. 438/65
`4,965,415 A
`10/1990 Young etal~ ~~~~~~~~~~~~ ~- 200/83N
`4,966,663 A * 10/1990 Mauger
`.................... .. 205/656
`4,983,251 A
`1/1991 Halsmaetal
`4,990,462 A
`2/1991 Sliwa
`4,994,336 A
`2/1991 Benecke et 31.
`4,994,735 A
`2/1991 Leedy ...................... .. 324/158
`5,000,113 A
`3/1991 Wang et 31.
`
`324/158P
`
`
`
`
`
`..
`..
`
`................. .. 438/619
`
`
`
`
`
`Page 2 of 97
`
`Page 2 of 97
`
`

`

`US 7,485,571 B2
`
`Page 3
`
`6,518,073 B2
`6,563,224 B2
`6,682,981 B2
`6,713,327 B2
`6,894,392 B1
`2005/0023656 A1
`
`2/2003 Momohara
`5/2003 Leedy
`1/2004 Leedy
`3/2004 Leedy
`5/2005 Gudesen et al.
`2/2005 Leedy
`
`FOREIGN PATENT DOCUMENTS
`
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`EP
`GB
`GB
`GB
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`Jp
`JP
`JP
`JP
`WO
`WO
`
`W0
`W0
`W0
`W0
`W0
`W0
`
`0 189 976
`0201380 Bl
`0224 418 Bl
`A2 0 238 089
`0 314 437
`0419 898 Bl
`0455 455 Bl
`0487 302 Bl
`0 503 816 Bl
`0518283
`0518 774 Bl
`0526 551 Bl
`0554 063 Bl
`0555 252 Bl
`0703 618 A1
`0703 619 A1
`0731525
`2125168
`2125168
`2215168
`60-74643
`560426871
`61-30059 A
`62-272556 A
`563-076484
`563429862
`01457561 A
`1101499476
`402027600 A
`02-037655
`02-082564
`03427816
`03474715
`H03-284871
`04-042957
`04-076946
`04-083371
`04-107964
`04-196263
`05-109977
`05.283607 A
`08_504060 A
`09452979 A
`10_107065
`10_209371 A
`WO 89 10255
`WO 90 09093
`
`W091/05366
`WO 92/03848
`W09217901
`WO 98/19337
`W0 01/05366
`W0 03/078305
`
`8/1986
`12/1986
`6/1987
`9/1987
`5/1989
`4/1991
`11/1991
`5/1992
`9/1992
`12/1992
`12/1992
`2/1993
`8/1993
`8/1993
`3/1996
`3/1996
`9/1996
`2/1984
`2/1984
`9/1989
`“985
`7/1985
`2/1986
`11/1987
`4/1988
`9/1988
`6/1989
`8/1989
`“1990
`2/1990
`3/1990
`5/1991
`7/1991
`12/1991
`2/1992
`3/1992
`3/1992
`4/1992
`7/1992
`4/1993
`10/1993
`4/1996
`@997
`4,1998
`8,1998
`11,1989
`8/1990
`
`“991
`“992
`10/1992
`5/1998
`1/2001
`9/2003
`
`OTHER pUBLICATIONS
`
`Alloert, K., et al., “A Comparison Between Silicon Nitride Films
`Made by PCVD of NZ-Sih4 /Ar and NZ-SiH4/He,” Journal ofthe
`ElectrochemicalSociety, vol. 132, No. 7, pp. 1763-1766, (Jul. 1985).
`Hendricks, et al., “Polyquinoline Coatings and Films: Improved
`Organic Dielectrics for IC’s and MCM’s,” Eleventh IEEE/CHMT
`International Electronics Manufacturing Technology Symposium,
`pp. 361-265 (1991).
`
`........... .. 365/200
`9/1996 Toshiakietal.
`.... .. 437/51
`10/1996 Rammetal.
`
`............... .. 313/306
`11/1996 Boreletal.
`11/1996 Leedy ....................... .. 437/51
`ll/l996 Gallup et al.
`11/1996 Bairetal.
`12/1996 Leedy ......................... .. 430/5
`12/1996 Ludwig et a1.
`.
`365/63
`12/1996 Pierrat ......................... .. 430/5
`12/1996 Hornbeck ................. .. 359/291
`1/1997 Leedy
`. 257/347
`1/1997 Leedy ...................... .. 257/619
`1/1997 Heijboer .................... .. 439/20
`2/1997 Noda ....................... .. 257/226
`3/1997 Sakuietal.
`4/1997 Chen et a1.
`............ .. 438/113
`5/1997 Tennant et a1.
`.430/313
`5/1997 Leedy ...... ..
`.435/228
`5/1997 Leedy ..
`.438/686
`6/1997 Val
`.... ..
`.430/315
`8/1997 Leedy ..
`.. 438/25
`8/1997 Leedy ...... ..
`438/15
`8/1997 Hudak et a1.
`257/774
`10/1997 Chen et a1.
`395/566
`12/1997 Ohara et a1.
`3/1998 Leedy ...................... .. 430/315
`3/1998 Flesheretal.
`4/1998 Di Zenzo et a1.
`5/1998 Weise etal. ............... .. 427/579
`6/1998 Bozso et a1.
`257/777
`
`.428/446
`6/1998 Okonogi
`7/1998 Rolfson ....................... .. 430/5
`7/1998 FMS
`7/1998 Daberko
`8/1998 Zavracky et a1.
`10/1998 Bertin et a1.
`11/1998 Ray .......................... .. 257/48
`11/1998 Leedy ..
`.438/107
`11/1998 Leedy
`438/6
`...... ..
`1/1999 Ito etal.
`. 257/370
`2/1999 Sotokawaetal.
`216/18
`2/1999 Leedy ...... ..
`.438/110
`2/1999 Sweatt et a1.
`355/53
`3/1999 Davidson
`.438/455
`3/1999 Fieldetal.
`216/2
`5/1999 Hubner
`.438/106
`6/1999 Leedy
`.438/108
`8/1999 Leedy
`.438/157
`11/1999 Leedy ...... ..
`.438/107
`12/1999 Cutter et a1.
`430/5
`12/1999 Leedy
`. 438/667
`2/2000 Leedy ...................... .. 438/626
`3/2000 Wang etal.
`4/2000 Houston
`7/2000 Adannc, Jr.
`7/2000 Br1x et al.
`7/2000 Roussakov
`8/2000 Gardner etal. ............ .. 257/777
`10/2000 Leedy ...................... .. 257/778
`11/2000 Ikenaga etal.
`2/2001 Tayanaka ................... .. 438/57
`
`3/2001 Aleshin et a1.
`.
`430/5
`3/2001 Leedy ....................... .. 365/51
`5/2001 Lofgren et al.
`5/2001 Patti
`......................... .. 365/201
`7/2001 Lin ........................... .. 430/30
`9/2001 Leedy ..
`324/760
`
`9/2001 Leedy ................. .. 324/207.l7
`10/2001 Sobel et al.
`10/2001 Mohamed et a1.
`ll/2001 Sobel et a1.
`4/2002 Clifton et al.
`9/2002 Brandes et al.
`
`
`
`
`
`.......... .. 257/777
`
`.
`
`
`
`..
`
`148/33.3
`............... .. 257/506
`
`5,555,212 A
`5,563,084 A
`4,940,916 A
`5,571,741 A
`5,572,689 A
`5,577,050 A
`5,580,687 A
`5,581,498 A
`5,582,939 A
`5,583,688 A
`5,592,007 A
`5,592,018 A
`5,595,933 A
`5,606,186 A
`5,615,163 A
`5,620,915 A
`5,627,112 A
`5,629,137 A
`5,633,209 A
`5,637,536 A
`5,654,127 A
`5,654,220 A
`5,656,552 A
`5,675,185 A
`5,694,588 A
`5,725,995 A
`5,733,814 A
`5,745,673 A
`5,750,211 A
`5,760,478 A
`5,773,152 A
`5,786,116 A
`5,786,629 A
`5,787,445 A
`5,793,115 A
`5,818,748 A
`5,831,280 A
`5,834,334 A
`5,840,593 A
`5,856,695 A
`5,868,949 A
`5,869,354 A
`5,870,176 A
`5,880,010 A
`5,882,532 A
`5,902,118 A
`5,915,167 A
`5,946,559 A
`5,985,693 A
`5,998,069 A
`6,008,126 A
`6,020,257 A
`RE36,623 E
`6,045,625 A
`6,084,284 A
`6,087,284 A
`6,092,174 A
`6,097,096 A
`6,133,640 A
`6,154,809 A
`6,194,245 B1
`6,197,456 B1
`6,208,545 B1
`6,230,233 B1
`6,236,602 B1
`6,261,728 B1
`6,288,561 B1
`6,294,909 B1
`6,300,935 B1
`6,301,653 B1
`6,320,593 B1
`RE37,637 E
`6,445,006 B1
`
`Page 3 of 97
`
`Page 3 of 97
`
`

`

`US 7,485,571 B2
`Page 4
`
`Knolle, W.R., et al., “Characterization of Oxygen-Doped, Plasma-
`Deposited Silicon Nitride,” Journal of the Electrochemical Society,
`vol. 135, No. 5, pp. 1211-1217, (May 1988).
`Nguyen, S.V., Plasma Assisted Chemical Vapor Deposited Thin
`Films for Microelectronic Applications, J. Vac. Sci. Technol. vol. B4,
`No. 5, pp. 1159-1167, (Sep./Oct. 1986).
`Olmer, et al., “Intermetal Dielectric Deposition by Plasma Enhanced
`Chemical Vapor Deposition,” Fifth IEEE/CHMTInternational Elec—
`tronic Manufacturing Technology SymposiumiDesign—to—Manufac—
`turing Transfer Cycle, pp. 98-99 (1988).
`Runyan,W.R., “Deposition of Inorganic Thin Films,” Semiconductor
`Integrated Circuit Processing Technology, p. 142 (1990).
`Sze, S.M., “Surface Micromachining,” Semiconductor Sensors, pp.
`58-63 (1994).
`Vossen, John L., “Plasma-Enhanced Chemical Vapor Deposition,”
`Thin Film Processes 11, pp. 536-541 (1991).
`Wolf, Stanley, “Basics of Thin Films,” Silicon Processing for the
`VLSIEra, pp. 115, 192, 193, and 199 (1986).
`Aboaf, J.A., “Stresses in SiO2 Films Obtained from the Thermal
`Decomposition of TetraethyorthosilicateiEffect of Heat Treatment
`and Humidity,” J. Electrochem. Soc.: Solid State Science: 116(12):
`1732-1736 (Dec. 1969).
`Scheuerman, R.J., “Fabrication of Thin Dielectric Films with Low
`Internal Stresses,” J. Vac. Sci. and Tech., 7(1): 143-146 (1970).
`Bailey, R., “Glass for Solid-State Devices: Glass film has low intrin-
`sic compressive stress for isolating active layers of magnetic-bubble
`and other solid-state devices,” NASA Tech Brief (1982).
`“Partitioning Function and Packaging of Integrated Circuits for
`Physical Security of Data,” IBM Technical Disclosure Bulletin, IBM
`Corp.; 32(1): 46-49 (Jun. 1989).
`Hsieh, et al., “Directional Deposition of Dielectric Silicon Oxide by
`Plasma Enhanced TEOS Process,” 1989 Proceedings, Sixth Interna-
`tional IEEE VLSI Multilevel Interconnection Conference, pp. 411-
`415 (1989).
`Tessier, et al., “An Overview of Dielectric Materials for Multichip
`Modules,” SPE, Electrical & Electronic Div.; (6): 260-269 (1991).
`Treichel, et al ., “Planarized Low-Stress Oxide/Nitride Passivation for
`ULSI Devices,” J. Phys IV, Colloq. (France), 1 (C2): 839-846 (1991).
`Krishnamoorthy, et al., “3 -D Integration of MQW Modulators Over
`Active Submicron CMOS Circuits: 375 Mb/s Transimpedance
`ReceiveriTransmitter Circuit,” IEEE Photonics Technology Let-
`ters, 2(11): 1288-1290 (Nov. 1995).
`Tielert, et al., “Benefits of Vertically Stacked Integrated Circuits for
`Sequential Logic,” IEEE, XP-000704550, 121-124 (Dec. 5, 1996).
`“Miniature Electron Microscopes Without Vacuum Pumps, Self-
`Contained, Microfabricated Devices with Short Working Distances,
`Enable Operation in Air,” NASA Tech Briefs, 39-40 (1998).
`Sung, et al., “Well-aligned carbon nitride nanotubes synthesized in
`anodic alumina by electron cyclotron resonance chemical vapor
`deposition,” Applied Physics Letters, vol. 74, No. 2, 197, 1999, Jan.
`11, 1999.
`Partial European Search Report for Application No. EP 02009643
`(Oct. 8, 2002).
`Phys. Rev., B, Condens, Matter Mater. Phys. (USA), Physical Review
`B (Condensed Matter and Materials Physics), Mar. 15, 2003, APS
`through AIP, USA.
`Jones, R.E., Jr. “An evaluation of methods for passivating silicon
`integrated circuits”; Apr. 1972; pp. 23-28.
`Svechnikov, S.V.; Kobylyatskaya, M.F.; Kimarskii, V.I.; Kaufman,
`A.P.; Kuzovlev, Yu. I.; Cherepov, Ye. I.; Fomin, B.I.; “A switching
`plate with aluminum membrane crossings of conductors”; 1972.
`Sun, R.C.; Tisone, T.C.; Cruzan, P.D.; “Internal stresses and resistiv-
`ity of low-voltage sputtered tungsten films (microelectronic cct. con-
`ductor)”; Mar. 1973; pp. 1009-1016.
`
`Wade, T.E.; “Low temperature double-exposed polyimide/oxide
`dielectric forVLSI multilevel metal interconnection”; 1982; pp. 516-
`5 19.
`Boyer, P.K.; Collins, G.J.; Moore, C.A.; Ritchie, W.K.; Roche, G. A.;
`Solanski, R. (A); Tang, C.C.; “Microelectronic thin film deposition
`by ultraviolet laser photolysis Monograph TitleiLaser processing of
`semiconductor devices”; 1983; pp. 120-126.
`Boyer, PK; Moore, C.A.; Solanki, R.; Ritchie, W.K.; Roche, G.A.;
`Collins, G.J.; “Laser photolytic deposition of thin films”; 1983; pp.
`1 19-127.
`Chen, Y.S.; Fatemi, H.; “Stress measurements on multilevel thin film
`dielectric layers used in Si integrated circuits”; May-Jun. 1986; pp.
`645-649.
`Salazar, M.; Wilkins, C.W., Jr.; Ryan, V.W.; Wang, T.T.; “Low stress
`films of cyclized polybutadiene dielectrics by vacuum annealing”;
`Oct. 21-22, 1986; pp. 96-102.
`Townsend, P.H.; Huggins, R.A.; “Stresses in borophosphosilicate
`glass films during thermal cycling”; Oct. 21-22, 1986; pp. 134-141.
`Pai, Pei-Lin; “Multilevel Interconnection TechnologiesiA Frame-
`work And Examples”; 1987; pp. 1871.
`Pei-lin Pai; Chetty, A.; Roat, R.; Cox, N.; Chiu Ting; “Material
`characteristics of spin-on glasses for interlayer dielectric applica-
`tions”; Nov. 1987, pp. 2829-2834.
`Allen, Mark G.,; Senturia, Stephen D.; “Measurement of polyimide
`interlayer adhesion using microfabricated structures”; 1988; pp. 352-
`356.
`Chang, E.Y.; Cibuzar, G.T.; Pande, K.P.; “Passivation ofGaAs FET’s
`with PECVD silicon nitride films of different stress states”; Sep.
`1988; pp. 1412-1418.
`Riley, P.E.; Shelley, A.; “Characterization of a spin-applied dielectric
`for use in multilevel metallization”; May 1988; pp. 1207-1210.
`Tamura, H.; Nishikawa, T.; Wakino, K.; Sudo, T.; “Metalized MIC
`substrates using high K dielectric resonator materials”; Oct. 1988;
`pp. 117-126.
`(M.I. Kalinin
`I.V.; Nikolaeva, L.V.; Vakser, N.M.,
`Kochugova,
`Leningrad Polytechnic Institute (USSR); “Electrophysical investiga-
`tion ofthin-layered inorganic coatings”; 1989; pp. 826-828.
`Reche, J.J. H.; “Control ofthin film materials properties used in high
`density multichip interconnect”; Apr. 24-28, 1989; p. 494.
`Maw, T.; Hopla, R.E.; “Properties of a photoimageable thin
`polyimide film”; Nov. 26-29, 1990; pp. 71-76.
`Draper, B. L.; Hill, T.A.; “Stress and stress relaxation in integrated
`circuit metals and dielectrics”; Jul.-Aug. 1991; pp. 1956-1962.
`Guckel, H.; “Surface micromachined pressure transducers”; 1991;
`pp. 133-146.
`Garino, T.J.; Harrington, H. M.; Residual stress in PZT thin films and
`its effect on ferroelectric properties; 1992; pp. 341-347.
`“Christensens Physics of Diagnostic Radiology,” Curry et al., pp.
`29-33, 1990.
`Wolf, S. et al., “Silicon Processing for the VLSI Era,” Process Tech-
`nology, Latice Press, Sunset Beach, CA, vol. 1, pp. 191-194, 1988.
`Mitsumasa Koyanagi et al., “Design of 4-KBIT X 4-layer Optically
`Coupled Three-Dimensional Common Memory For Parallel Proces-
`sor System,” IEEE Journal of Solid-State Circuits, vol. 25. No. 1, Feb.
`1, 1990.
`S. Wolf, Silicon Processing, 1990, Lattice Press, vol. 2, p. 111.
`Wolf, Stanley and Ricth N. Tauber; Silicon Procesing For the VLSI
`Era, vol. 1: Process Technology; Sunset Beach, CA: Lattice Press,
`1986, pp. 191-194.
`S. Wolf, Silicon Processing For the VLSI Era, 1990, Lattice Press,
`vol. 2, p. 191.
`“Christensens Physics of Diagnostic Radiology,” Curry et al., pp.
`29-33, 1990.
`
`* cited by examiner
`
`Page 4 of 97
`
`Page 4 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 1 of 64
`Sheet 1 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`
`
`
`’0
`
`f
`
`
`
`
`
`1
`1
`
`
`
`
`
`
`
`Page 5 of 97
`
`Page 5 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 2 of 64
`Sheet 2 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`?
`???
`.
`|
`I
`S)
`.9
`??
`1L
`
`o 1
`
`0')
`??
`N
`(NJ
`
`??
`R
`
`a
`
`VN
`
`??
`
`00
`CO
`N
`(NJ
`
`g
`
`ON
`
`?
`CNJ
`
`Page 6 of 97
`
`Page 6 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 3 of 64
`
`US 7,485,571 B2
`
`20C
`
`Od 2
`
`200
`
`{fäH-Zá-Z) L 20
`
`
`
`
`
`
`
`20c
`
`
`
`206
`
`
`
`?
`
`|
`i la
`
`17a
`
`øfáf24 za zz%z???)
`) 20
`F-L
`200
`|
`|
`1 1b
`11C
`
`200
`
`17b
`
`Fig 1e
`
`Page 7 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 4 of 64
`Sheet 4 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`‘l
`?g
`
`
`
`Fig_1f
`
`Fig. 1g
`Fig__1g
`
`Page 8 of 97
`
`Page 8 of 97
`
`

`

`mm
`
`mm
`
`
`
`mm
`
`.:tut
`
`Page 9 of 97
`
`
`
`

`

`mini
`
`Page 10 of 97
`
`

`

`
`
`Page 11 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`om”\\‘
`o\\\\\\
`.\\\
`\//kV////
`
`/%/
`
`/
`
`./ //////%
`
`//
`
`
`
`Page 12 of 97
`
`Page 12 of 97
`
`
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 9 of 64
`Sheet 9 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`C
`(?] []
`C]
`5” D
`
`
`
`
`
`
`
`WWII/I’M
`
`
`
`54
`S4
`
`Page 13 0f 97
`
`Page 13 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`Sheet 10 of 64
`Sheet100f64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`.VI|I3m
`
`
`
`kuwkwu.
`
`
`
`ZA.
`Nu
`
`08
`om
`
`29
`mm
`
`0/
`on
`
`Page 14 0f 97
`
`Page 14 of 97
`
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb. 3 2009
`
`Sheet 11 of 64
`Sheet 11 of 64
`
`
`
`
`
`Page 15 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 12 of 64
`Sheet 12 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`7
`
`7
`
`
`
`
`'-???! -
`E3|
`
`
`
`
`
`
`4’
`
`I’ I
`
`Vt
`
`
`
`_—_
`
`
`
`
`
`
`
`Page 16 0f 97
`
`Page 16 of 97
`
`

`

`U.S. Patent
`
`78
`80
`f— — _ - — _’f7j_——i
`80
`
`‘l‘
`__[.4
`
`-‘-'H
`
`//1é
`
`
`
`
`
`50
`
`503
`
`5%
`
`78
`
`76
`
`56
`
`Fig_6f
`
`
`I l///
`_ég-
`
`"’///////Al I: 78
`
`
`
`
`
`
`
`Fig_Eg
`
`Page 17 of 97
`
`

`

`an
`
`\V\
`
`~‘I.
`
`Page 18 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 15 of 64
`Sheet 15 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`
`
`
`
`
`
`58 -
`
`1
`1
`
`
`
`160
`160
`
`152
`152
`
`160
`160
`
`Fig. 7
`Fig_ 7
`
`Page 19 0f 97
`
`
`
`
`—7 . ? ?
`- m
`
`
`
`
`
`
`Page 19 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 16 of 64
`Sheet 16 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`166
`
`99 ||
`
`Fig_8
`
`Page 20 0f 97
`
`Page 20 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 17 of 64
`Sheet 17 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`176
`176
`
`174
`
`178
`178
`
`Fig~93
`
`
`
`
`
`176
`
`Page 21 0f 97
`
`Page 21 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 18 of 64
`Sheet 18 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 22 0f 97
`
`Page 22 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 19 of 64
`Sheet 19 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 23 0f 97
`
`Page 23 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 20 of 64
`
`US 7,485,571 B2
`
`193
`
`|
`197
`
`T
`
`Fig. 99
`
`197
`|
`
`193
`
`201
`
`Fig 9h
`
`189
`
`191
`
`189
`
`191
`
`Page 24 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 21 of 64
`Sheet 21 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`
`
`
`
`
` fl—n—g
`
`
`
`213
`213
`
`209
`
`Fig 9j
`Fig__ 9]
`
`
`
`207
`
`211
`
`Page 25 0f 97
`
`Page 25 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 22 of 64
`Sheet 22 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`Fig_10a
`
`:
`
`Page 26 0f 97
`
`Page 26 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 23 of 64
`Sheet 23 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`Q m T
`
`s
`
`E3
`LL
`
`(0
`
`8
`
`co
`
`(D
`
`"‘7
`
`0
`57
`
`Page 27 0f 97
`
`Page 27 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 24 of 64
`
`US 7,485,571 B2
`
`220 220
`
`Fig 10c
`
`
`
`
`
`226
`
`
`
`??????? ???????
`
`| – ||
`
`224
`%2022, #"
`–C- Z
`
`Fig 10d
`
`202
`
`202
`
`Page 28 of 97
`
`

`

`US. Patent
`
`Feb. 3 2009
`
`Sheet 25 of 64
`
`
`
` ‘-
`
`
`
`24
`
`240
`
`Fig_11b
`
`
`
`Page 29 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 26 of 64
`Sheet 26 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`258
`
`? ? ? T61-I
`
`
`
`
`
`Page 30 0f 97
`
`Page 30 of 97
`
`

`

`
`
`M
`
`
`
`
`
`248
`
`
`
`272-51
`
`Page 31 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 28 of 64
`Sheet 28 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`§
`277
`
`Fig__11f
`
`s
`
`Page 32 0f 97
`
`Page 32 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 29 of 64
`Sheet 29 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 33 0f 97
`
`Page 33 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 30 of 64
`Sheet 30 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`29%
`
`290
`
`{292
`
`
`
`Page 34 0f 97
`
`Page 34 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 31 of 64
`Sheet 31 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`308
`308
`
`A
`
`
`-
`
`
`
`282
`
`310
`310
`
`
`
`|
`
`
`\ 24
`??
`
`
`
`
`
`12-?
`
`
`
`312
`
`Fig_ 12f
`
`Page 35 0f 97
`
`Page 35 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 32 of 64
`
`US 7,485,571 B2
`
`
`
`
`
`
`
`
`
`
`
`Fig 12g
`
`
`
`
`
`Fig 12h
`
`Page 36 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 33 of 64
`
`US 7,485,571 B2
`
`
`
`Fig 12í
`
`
`
`
`
`
`
`
`
`
`
`Fig 12;
`
`Page 37 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 34 of 64
`
`US 7,485,571 B2
`
`
`
`
`
`Fig 13a
`
`Page 38 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 35 of 64
`Sheet 35 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`'/////////A
`VIII/IA
`
`
`
` .
`
`
`
`
`
`+ 339
`
`
`
`
`
`Page 39 0f 97
`
`Page 39 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`.
`e
`
`
`
`
`
`m
`
`322a
`322a
`
`S-322b
`3 22b
`
`
`
`
`
`
`
`
`
`Page 40 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`of 64
`Sheet 37
`Sheet37
`of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 41 0f 97
`
`Page 41 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 38 of 64
`Sheet 38 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`362
`362
`
`
`
`
`
`380
`360
`
`355
`365
`
`364
`364
`
`Page 42 0f 97
`
`Page 42 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 39 of 64
`Sheet 39 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`382
`362
`
`
`
`
`
`Fig 18
`Fig__ 1 8
`
`Page 43 0f 97
`
`Page 43 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 40 of 64
`
`US 7,485,571 B2
`
`?
`
`#
`
`373
`372
`
`|_-?-? 377
`
`Fig 19a
`
`374
`
`373
`372
`
`374
`
`Fig 196
`
`Page 44 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 41 of 64
`Sheet 41 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`388
`388
`
`386-2
`386-2
`
`392-3
`392-3
`
`190
`190
`
`
`
`382
`
`382
`
`Page 45 0f 97
`
`Page 45 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 42 of 64
`
`US 7,485,571 B2
`
`
`
`Fig 22b
`
`Page 46 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 43 of 64
`
`US 7,485,571 B2
`
`410
`
`400
`
`408
`
`Fig 22c
`
`
`
`Page 47 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 44 of 64
`Sheet 44 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`Fig_23b
`
`330
`
`Page 48 0f 97
`
`Page 48 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 45 of 64
`Sheet 45 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Fig 24
`Fig_ 24
`
`Page 49 0f 97
`
`Page 49 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`Sheet 46 of 64
`Sheet46of64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 50 0f 97
`
`Page 50 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 47 of 64
`Sheet 47 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 51 0f 97
`
`Page 51 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 48 of 64
`Sheet 48 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 52 0f 97
`
`Page 52 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 49 of 64
`
`US 7,485,571 B2
`
`496
`
`494
`
`Fig 28a
`
`498
`
`? 495
`
`495a
`
`495b
`
`Fig 28b
`
`Page 53 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 50 of 64
`
`N —YD
`
`??
`
`Fig 29b
`
`
`
`Page 54 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`Sheet 51 of 64
`Sheet5170f64
`
`US 7,485,571 B2
`US 7,485,571 132
`
`‘0
`
`m N
`
`I9 U
`
`.
`
`
`
`Ø
`
`209
`
`mmmmmm
`
`
`
`mwmm
`
`
`
`
`
`nmmm
`
`Page 55 0f 97
`
`Page 55 of 97
`
`
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 52 of 64
`
`
`
`Fig 29e
`
`Page 56 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 53 of 64
`Sheet 53 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`("K
`508
`508
`
`544
`
`542
`542
`
`540
`540
`
`L514a
`-
`
`Fig_29f
`
`58Gb
`
`
`
`566
`566
`
`570-Y
`570-Y
`
`
`
`Page 57 0f 97
`
`Page 57 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 54 of 64
`Sheet 54 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Fig 299
`
`Page 58 0f 97
`
`Page 58 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 55 of 64
`Sheet 55 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`564
`
`580b
`
`Page 59 0f 97
`
`562
`
`????
`
`5803
`
`Fig_29i
`
`Page 59 of 97
`
`

`

`U.S. Patent
`
`US 7,485,571 B2
`
`
`
`% ZZZZZZZZZ – ÝZ Ø
`
`[6ZT61-I
`
`
`
`Ø ØZZZZZ
`
`Page 60 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`Sheet 57 of 64
`Sheet570f64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`-50
`:570-Y
`
`
`
`Fig 291
`Fig_29l
`
`622
`622
`
`Page 61 0f 97
`
`Page 61 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 58 of 64
`
`US 7,485,571 B2
`
`
`
`Fig 29p
`
`Page 62 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 59 of 64
`Sheet 59 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`.._.__.___._._.____d____—--
`
`662
`
`668
`
`Fig__30
`
`660
`
`672
`
`676
`
`Page 63 0f 97
`
`Page 63 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 60 of 64
`Sheet 60 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`;
`704-3
`
`Fig__31a
`
`:
`
`Page 64 0f 97
`
`Page 64 of 97
`
`

`

`U.S. Patent
`U.S. Patent
`
`Feb. 3, 2009
`Feb.3,2009
`
`Sheet 61 of 64
`Sheet6lrof64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`
`
`Page 65 0f 97
`
`Page 65 of 97
`
`

`

`U.S. Patent
`US. Patent
`
`Feb. 3, 2009
`Feb. 3, 2009
`
`Sheet 62 of 64
`Sheet 62 of 64
`
`US 7,485,571 B2
`US 7,485,571 B2
`
`
`
`j
`732
`
`ig__
`
`32a
`s
`
`Page 66 0f 97
`
`Page 66 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet
`
`63 0f 64
`
`US 7,485,571 B2
`
`
`
`Page 67 0f 97
`
`Page 67 of 97
`
`

`

`U.S. Patent
`
`Feb. 3, 2009
`
`Sheet 64 of 64
`
`US 7,485,571 B2
`
`04/
`
`
`
`Z-9444944
`
`Page 68 of 97
`
`

`

`US 7,485,571 B2
`
`1
`METHOD OF MAKING AN INTEGRATED
`CIRCUIT
`
`CROSS REFERENCE TO RELATED
`APPLICATIONS
`
`This application is a continuation of commonly assigned
`U.S. patent application Ser. No. 09/775,597, filed Feb. 5,
`2001 , now U.S. Pat. No. 6,682,981, which is a continuation of
`U.S. patent application Ser. No. 09/027,959, filed Feb. 23,
`1998 now abandoned, which is a division of U.S. patent
`application Ser. No. 08/850,749, filed May 2, 1997, now U.S.
`Pat. No. 5,985,693, which is a continuation of U.S. patent
`application Ser.