US008907499B2
`
`(12) United States Patent
`Leedy
`
`(10) Patent No.:
`(45) Date of Patent:
`
`US 8,907,499 B2
`*Dec. 9, 2014
`
`(54) THREE DIMENSIONAL STRUCTURE
`MEMORY
`
`(71) Applicant: Glenn J Leedy, Carmel, CA (US)
`-
`(72) Inventor: Glenn J Leedy, Carmel, CA (US)
`(*) Notice:
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 0 days.
`This patent is subject to a terminal dis
`claimer.
`
`(2013.01); H0IL 23/5226 (2013.01); H0IL
`27/10897 (2013.01); H01D 23/481 (2013.01):
`GIIC 5/06 (2013.01)
`USPC ............ 257/777; 257/778; 257/685; 438/977
`(58) Field of Classification Search
`USPC .............. 257/777–778, 685–686: 365/63, 51,
`-
`. -
`365/230.06; 438/455, 97. 107, 108
`See application file for complete search history.
`
`(56)
`
`References Cited
`
`|U.S. PATENT DOCUMENTS
`
`(21) Appl. No.: 13/734,874
`
`(22) Filed:
`
`Jan. 4, 2013
`
`2,915,722 A 12/1959 Foster
`3,202,948 A
`8/1965 Farrand
`(Continued)
`
`(65)
`
`Prior Publication Data
`
`FOREIGN PATENT DOCUMENTS
`
`|US 2013/0187290 A1
`
`Jul. 25, 2013
`
`Related U.S. Application Data
`(60) Continuation of application No. 12/788,618, filed on
`May 27, 2010, which is a continuation of application
`No. 10/143,200, filed on May 13, 2002, now
`abandoned, which is a continuation of application No.
`09/607,363, filed on Jun. 30, 2000, now Pat. No.
`6,632,706, which is a continuation of application No.
`08/971,565, filed on Nov. 17, 1997, now Pat. No.
`6,133,640, which is a division of application No.
`08/835,190, filed on Apr 4, 1997, now Pat No.
`5,915,167.
`
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`
`(51) Int. Cl.
`H0 IL 23/48
`GI IC 5/02
`H0 IL 25/065
`H0 IL 27/06
`H0 IL 21/768
`H0 IL 23/522
`H0 IL 27/108
`GI IC 5/06
`(52) U.S. CI.
`CPC ........... GIIC5/02 (2013.01); HOIL 2224/8083
`(2013.01); H01L 25/0657 (2013.01), H01L
`27/0688 (2013.01), H01L 21/76898 (2013.01);
`Y10S 438/977 (2013.01), HOIL 2924/01079
`
`
`
`DE
`EP
`
`3/1983
`3233,195
`8/1986
`189976
`(Continued)
`
`OTHER PUBLICATIONS
`Bollmann et al., Three Dimensional Metallization for Vertically Inte
`grated Circuits, MAM’97—Materials for Advanced Metallization.
`-
`(Continued)
`-
`-
`-
`Primary Examiner – David Lam
`(74) Attorney, Agent, or Firm - Useful Arts IP
`(57)
`ABSTRACT
`A Three-Dimensional Structure (3DS) Memory allows for
`physical separation of the memory circuits and the control
`logic circuit onto different layers such that each layer may be
`separately optimized. One control logic circuit suffices for
`several memory circuits, reducing cost. Fabrication of 3DS
`memory involves thinning of the memory circuit to less than
`50 microns in thickness and bonding the circuit to a circuit
`stack while still in wafer substrate form. Fine-grain high
`density inter-layer vertical bus connections are used. The 3DS
`memory manufacturing method enables several performance
`and physical size efficiencies, and is implemented with estab
`lished semiconductor processing techniques.
`
`165 Claims, 9 Drawing Sheets
`
`1-3 arm separation
`
`Page 1 of 31
`
`SAMSUNG ET AL. EXHIBIT 1086
`Samsung et al. v. Elm 3DS Innovations, LLC
`IPR2016-00387
`
`

`

`US 8,907,499 B2
`Page2
`
`(56)
`
`References Cited
`
`U.s.pATENT DOCUMENTS
`
`3,430,835 A
`3,559,282 A
`3,550,354 A
`3,602,982 A
`3,615,901 A
`3,535,358 A
`3,716,429 A
`3,777,227 A
`3,780,352 A
`3,858,555 A
`3,922,705 A
`3,932,932 A
`3,997,381 A
`4,028,547 A
`4,070,230 A
`4,089,053 A
`4,104,418 A *
`4,131,985 A
`4,142,004 A
`4,195,232 A
`4,246,595 A
`4,249,302 A
`4,251,909 A
`4,252,531 A
`4,393,127 A
`4,394,401 A
`4,401,986 A
`4,416,054 A
`4,464,747 A
`4,500,905 A
`4,528,072 A
`4,539,068 A
`4,555,037 A
`4,585,991 A
`4,504,152 A
`4,612,083 A
`4,617,160 A
`4,618,397 A
`4,518,753 A
`4,622,632 A
`4,533,438 A
`4,637,029 A *
`4,542,487 A
`4,663,559 A
`4,684,436 A
`4,593,770 A
`4,702,336 A
`4,702,935 A
`4,705,155 A
`4,721,938 A
`4,724,328 A
`4,751,581 A
`4,755,570 A
`4,784,721 A
`4,810,573 A
`4,810,889 A
`4,825,277 A
`4,835,765 A
`4,841,483 A
`4,849,857 A
`4,855,867 A
`4,857,481 A
`4,890,157 A
`4,892,753 A
`4,892,842 A *
`4,897,708 A
`4,919,749 A
`4,924,589 A
`4,928,058 A
`2,641,129 A
`4,934,799 A
`4,939,568 A
`4,939,694 A
`4,940,916 A
`4,950,987 A
`
`Page 2 0f31
`
`3/1969 Patzeretal.
`2/1971 Lesk
`2/1971 Bnrknnnn
`9/1971 Emmasingel
`10/1971 Medicus
`1/1972 Grosonwnz
`2/1973 Napolietal.
`12/1973 Krishnaetal.
`12/1973 Redwnnz
`2/1975 Knipers
`11/1975 Yerman
`1/1975 Goodman
`12/1975 Wnn1nSS
`6/1977 Eisenberger
`1/1978 stein
`5/1978 Tnkezono e1n1,
`8/1978 Park etal.
`................... .. 427/567
`1/1979 Greenwoodetal.
`2/1979 Hauser, Jr. et al.
`4/1980 Sonnnb1ee1n1,
`1/1981 Noyorietal.
`2/1981 Crepenn
`2/1981 Hoeberechts
`4/1981 Knbnoki
`7/1983 Greschneretal.
`7/1983 Shioyaetal.
`8/1983 Trenkleretal.
`11/1983 Thomas et al.
`8/1984 Groudan etal.
`2/1985 Shibata
`7/1985 Kurosawaetal.
`9/1985 Takagietal.
`1/1985 Tn1(n1Sne1n1,
`4/1985 Re1de1n1,
`8/1985 Soboznk
`9/1986 Yasumoto etal.
`10/1986 Belangeretal.
`10/1986 Shimizu etal.
`10/1985 Sonmnz
`11/1986 Tanimoto etal.
`12/1985 Knn1ee1n1,
`1/1987 Hayakawa etal.
`2/1987 Carter
`5/1987 Christensen
`8/1987 Burnsetal.
`9/1987 Hntndn
`10/1987 seiben etal.
`10/1987 Mnedne1n1,
`11/1987 Go
`1/1988 Stevenson
`2/1988 Lischke
`8/1988 Reid
`8/1988 GnZd1'ke1n1,
`11/1988 Holmen etal.
`3/1989 Freeman
`3/1989 Yokomatsu etal.
`4/1989 Mattox etal.
`5/1989 Bergmansetal.
`5/1989 Fnrnynnln
`7/1989 Butt etal.
`8/1989 Gazdiketal.
`8/1989 Tnn1e1n1,
`12/1989 w11Son
`1/1990 wnnge1n1,
`1/1990 Corrie etal.
`1/1990 C1eInen1S
`4/1990 Mauger et al.
`5/1990 Leedy
`5/1990 Williamson
`6/1990 Bull
`6/1990 Chu
`7/1990 Kato etal.
`7/1990 Eaton etal.
`7/1990 Boreletal.
`8/1990 Vranish et a1.
`
`.................. .. 438/59
`
`...... .. 372/45.01
`
`4,952,446 A
`4,954,865 A
`4,954,875 A
`4,957,882 A
`4,965,415 A
`4,966,663 A
`4,983,251 A
`4,988,423 A
`4,990,462 A
`4,994,336 A
`4,994,735 A
`5,000,113 A
`5,008,619 A
`5,010,024 A
`5,020,219 A
`5,045,921 A
`5,051,326 A
`5,059,556 A
`5,062,689 A
`5,064,275 A
`5,070,026 A
`5,071,510 A
`5,087,585 A
`5,098,865 A
`5,103,557 A
`5,109,360 A
`5,110,373 A
`5,110,712 A
`5,111,278 A
`5,116,777 A
`5,117,282 A
`5,119,164 A
`5,130,894 A
`5,132,244 A
`5,144,142 A
`5,151,775 A
`5,156,909 A
`5,166,962 A
`5,169,805 A
`5,188,706 A
`5,198,965 A
`5,202,754 A
`5,203,731 A
`5,225,771 A
`5,236,118 A
`5,240,458 A
`5,241,454 A
`5,245,227 A
`5,245,277 A
`5,255,227 A
`5,259,247 A
`5,262,341 A
`5,262,351 A
`5,270,261 A
`5,273,940 A
`5,274,270 A
`5,278,839 A
`5,279,865 A
`5,283,107 A
`5,284,796 A
`5,284,804 A
`5,293,457 A
`5,321,884 A
`5,323,035 A
`5,323,060 A
`5,324,687 A
`5,338,975 A *
`5,343,366 A
`5,343,406 A
`5,347,428 A
`5,354,595 A
`5,357,473 A
`5,358,909 A
`5,363,021 A
`5,374,564 A
`5,374,569 A
`5,374,920 A
`5,374,940 A
`5,385,632 A
`
`8/1990 Lee et al.
`9/1990 Rokos
`9/1990 Clements
`9/1990 Shinomiya
`10/1990 Young et a1,
`10/1990 Manger
`1/1991 Halsmaetal.
`1/1991 Ynnlnnloto
`2/1991 Shwa
`2/1991 Benecke et al.
`2/1991 Leedy
`3/1991 Wang etal,
`4/1991 Keoghetal.
`4/1991 Allenetal.
`6/1991 Leedy
`9/1991 Linet al.
`9/1991 Celleretal.
`10/1991 Wlleoxen
`11/1991 Koehler
`11/1991 Tsunodaetal.
`12/1991 G_reenwa1d et a1.
`12/1991 Flndleretal,
`2/1992 Hayashl
`3/1992 Machado etal.
`4/1992 Leedy _
`4/1992 Inazumletal.
`5/1992 Manger
`5/1992 Kessleretal.
`5/1992 Elehelberger
`5/1992 Chnneta1~
`5/1992 Snlanno
`6/1992 S11_Waeta1,
`7/1992 M111er
`7/1992 Roy
`9/1992 Fne1<i_eta1,
`9/1992 Hadwm
`10/1992 Henager, Jr. et al.
`11/1992 Murookaetal.
`12/1992 Molfetal.
`2/1993 H0n_e1n1~
`3/1993 Cnrns et a1,
`4/1993 Bertm et a1.
`4/1993 Zlmmerman
`7/1993 Leedy
`8/1993 B_0Wer_eta1.
`8/1993 Llnglaln et a1,
`8/1993 Ameenetal.
`9/1993 Fnne1<eta1~
`9/1993 Nguyen
`10/1993 Haeffele
`11/1993 Bannen
`11/1993 Fuek1 etal.
`11/1993 Bureauetal.
`12/1993 Beltin et al.
`12/1993 Sanders
`12/1993 Tuckerman
`1/1994 Mats1_1m0t0eta1.
`1/1994 Chebl et a1,
`2/1994 Bayeretel.
`2/1994 Nnknnlshl et 31,
`2/1994 M<_>s1eh1
`3/1994 Annla etal,
`6/1994 Ameenetal.
`6/1994 Leedy
`_
`6/1994 F0g_a1eta1.
`6/1994 Wojnarowskl
`8/1994 Cole etal.
`................... .. 257/750
`8/1994 Clpollaet al.
`8/1994 Freeman
`9/1994 Carsonet al.
`10/1994 Leedy
`10/1994 Mizuno etal.
`10/1994 Hashiguchi et a1.
`11/1994 MacDonald
`12/1994 Bruel
`12/1994 Yilmaz etal.
`12/1994 Evens
`12/1994 Corio
`1/1995 Goossen
`
`Page 2 of 31
`
`

`

`(56)
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`5,385,909
`5,397,747
`5,399,505
`RE34,893
`5,420,458
`5,424,920
`5,426,072
`5,426,363
`5,426,378
`5,432,444
`5,432,681
`5,432,719
`5,432,729
`5,432,999
`5,434,500
`5,448,106
`5,450,603
`5,451,489
`5,457,879
`5,463,246
`5,468,606
`5,470,693
`5,476,813
`5,478,781
`5,480,842
`5,481,133
`5,489,554
`5,502,667
`5,512,397
`5,514,628
`5,517,457
`5,527,645
`5,529,829
`5,534,465
`5,552,995
`5,555,212
`5,563,084
`5,571,741
`5,572,689
`5,574,729
`5,577,050
`5,580,687
`5,581,498
`5,582,939
`5,583,688
`5,583,749
`5,592,007
`5,592,018
`5,595,933
`5,606,186
`5,615,163
`5,620,915
`5,626,137
`5,627,112
`5,629,137
`5,633,209
`5,637,536
`5,637,907
`5,654,127
`5,654,220
`5,656,552
`5,661,339
`5,666,288
`5,675,185
`5,691,945
`5,694,588
`5,703,747
`5,715,144
`5,719,438
`5,725,995
`5,733,814
`5,736,448
`5,745,076
`5,745,673
`5,750,211
`
`>D>>>>>D>>>>>>D>>>>>>D>>>>>>D>>>>>>>>>>>>D>D>>D>>D>D>D>>D>D>D>D>D>>D>D>D>D>D>>>D>D>D>D>>>D>D>D>D>D>D>D>U'1D>D>D>
`
`1/1995
`3/1995
`3/1995
`4/1995
`5/1995
`6/1995
`6/1995
`6/1995
`6/1995
`7/1995
`7/1995
`7/1995
`7/1995
`7/1995
`7/1995
`9/1995
`9/1995
`9/1995
`10/1995
`10/1995
`11/1995
`11/1995
`12/1995
`12/1995
`1/1996
`1/1996
`2/1996
`3/1996
`4/1996
`5/1996
`5/1996
`6/1996
`6/1996
`7/1996
`9/1996
`9/1996
`10/1996
`11/1996
`11/1996
`11/1996
`11/1996
`12/1996
`12/1996
`12/1996
`12/1996
`12/1996
`1/1997
`1/1997
`1/1997
`2/1997
`3/1997
`4/1997
`5/1997
`5/1997
`5/1997
`5/1997
`6/1997
`6/1997
`8/1997
`8/1997
`8/1997
`8/1997
`9/1997
`10/1997
`11/1997
`12/1997
`12/1997
`2/1998
`2/1998
`3/1998
`3/1998
`4/1998
`4/1998
`4/1998
`5/1998
`
`Nelson et al.
`Angiulli et al.
`Dasse et al.
`Fujii et al.
`Shimoji
`Miyake
`Finnila
`Akagi et al.
`Ong
`Yasoharna et al.
`Linderman
`Freeman
`Carson et al.
`Capps et al.
`Hauck et al.
`Fujitsu
`Davies
`Leedy
`Gurtler et al.
`Matsunami
`Bogart et al.
`Sachdev et al.
`Naruse
`Bertin et al.
`Clifton et al.
`Hsu
`Gates
`Bertin et al.
`Leedy
`Enomoto et al.
`Sakui et al.
`Pati et al.
`Ko skenmaki et al.
`Frye et al.
`Sebastian
`Toshiaki et al.
`Rarnm et al.
`Leedy
`Gallup et al.
`Kino shita et al.
`Bair et al.
`Leedy
`Ludwig et al.
`Pierrat
`Hornbeck
`Tredennick
`Leedy
`Leedy
`Heijboer
`Noda
`Sakui et al.
`Chen et al.
`Dumoulin et al.
`Tennant et al.
`Leedy
`Leedy
`Val
`Leedy
`Leedy
`Leedy
`Hudak et al.
`Clayton
`Jones et al.
`Chen et al.
`Liou et al.
`Ohara et al.
`Voldman et al.
`Ameen et al.
`Beilstein, Jr. et al.
`Leedy
`Flesher et al.
`Saia et al.
`Turlington et al.
`Di Zenzo et al.
`Weise et al.
`
`Page 3 0f31
`
`US 8,907,499 B2
`Page 3
`
`>>>>>>>>D>D>>F1'1>>D>>>>>>>D>>>>>>D>>>>D>D>D>>D>D>D>D>D>>D>D>D>D>D>D>>D>D>D>D>D>>D>D>
`
`5,753,536
`5,760,478
`5,763,943
`5,764,577
`5,764,878
`5,773,152
`5,777,379
`5,786,116
`5,786,628
`5,786,629
`5,787,445
`5,793,115
`5,818,748
`5,831,280
`5,834,162
`5,834,334
`5,840,593
`5,847,929
`5,856,695
`5,861,761
`5,868,949
`5,869,354
`5,870,176
`5,880,010
`5,882,532
`5,892,271
`5,902,118
`5,907,178
`5,907,248
`5,914,504
`5,915,167
`5,930,150
`5,940,031
`5,946,559
`5,976,953
`5,985,693
`5,998,069
`6,002,268
`6,008,126
`6,008,530
`6,017,658
`6,020,257
`6,023,098
`6,027,958
`RE36,623
`6,045,625
`6,050,832
`6,084,284
`6,087,284
`6,092,174
`6,097,096
`6,133,626
`6,133,640
`6,154,809
`6,166,559
`6,166,711
`6,194,245
`6,197,456
`6,208,545
`6,230,233
`6,236,602
`6,239,495
`6,261,728
`6,288,561
`6,294,909
`6,300,935
`6,301,653
`6,320,593
`6,335,491
`6,355,976
`RE37,637
`6,376,909
`6,392,304
`6,417,027
`6,437,990
`6,445,006
`6,511,857
`6,517,027
`6,518,073
`
`5/1998
`6/1998
`6/1998
`6/1998
`6/1998
`6/1998
`7/1998
`7/1998
`7/1998
`7/1998
`7/1998
`8/1998
`10/1998
`11/1998
`11/1998
`11/1998
`11/1998
`12/1998
`1/1999
`1/1999
`2/1999
`2/1999
`2/1999
`3/1999
`3/1999
`4/1999
`5/1999
`5/1999
`5/1999
`6/1999
`6/1999
`7/1999
`8/1999
`8/1999
`11/1999
`11/1999
`12/1999
`12/1999
`12/1999
`12/1999
`1/2000
`2/2000
`2/2000
`2/2000
`3/2000
`4/2000
`4/2000
`7/2000
`7/2000
`7/2000
`8/2000
`10/2000
`10/2000
`11/2000
`12/2000
`12/2000
`2/2001
`3/2001
`3/2001
`5/2001
`5/2001
`5/2001
`7/2001
`9/2001
`9/2001
`10/2001
`10/2001
`11/2001
`1/2002
`3/2002
`4/2002
`4/2002
`5/2002
`7/2002
`8/2002
`9/2002
`1/2003
`2/2003
`2/2003
`
`Sugiyama et al.
`Bozso et al.
`Baker et al.
`Johnston et al.
`Kablanian et al.
`Okonogi
`Karavakis et al.
`Rolfson
`Beilstein, Jr. et al.
`Faris
`Daberko
`Zavracky et al.
`Bertin et al.
`Ray
`Malba
`Leedy
`Leedy
`Bernier et al.
`Ito et al.
`Kean
`Sotokawa et al.
`Leedy
`Sweatt et al.
`Davidson
`Field et al.
`Takeda et al.
`Hubner
`Baker et al.
`Bauer
`Augusto
`Leedy
`Cohen et al.
`Turlington et al.
`Leedy
`Zavracky et al.
`Leedy
`Cutter et al.
`Sasaki
`Leedy
`Kano
`Rhee et al.
`Leedy
`Higshiguchi et al.
`Vu et al.
`Wang et al.
`Houston
`Lee et al.
`Adamic, Jr.
`Brix et al.
`Roussakov
`Gardner et al.
`Hawke et al.
`Leedy
`Ikenaga et al.
`McClintock
`Odake
`Tayanaka
`Aleshin et al.
`Leedy
`Lofgren et al.
`Patti
`Sakui et al.
`Lin
`Leedy
`Leedy
`Sobel et al.
`Mohamed et al.
`Sobel et al.
`Alagaratnam et al.
`Faris
`Clifton et al.
`Forbes et al.
`Butler
`Akram
`Degani et al.
`Brandes et al.
`Kono et al.
`Abruzzese
`Momohara
`
`Page 3 of 31
`
`

`

`(56)
`
`References Cited
`
`6,551,857 B2
`6,563,224 B2
`6,617,671 B1
`6,632,706 B1
`6,682,981 B2
`6,707,160 B2
`6,713,327 B2
`6,714,625 B1
`6,734,539 B2
`6,740,964 B2
`6,747,347 B2
`6,765,279 B2
`6,838,896 B2
`6,867,486 B2
`6,373,057 B2
`6,391,337 B2
`6,894,392 B1
`6,979,895 B2
`7,106,646 B2
`7,138,295 B2
`7,176,545 B2
`7,176,579 B2
`7,193,239 B2
`
`4/2003 Leedy
`5/2003 Leedy
`9/2003 Akmm
`10/2003 Leedy
`1/2004 Leedy
`3/2004 30111111111
`3/2004 Leedy
`3/2004 Leedy
`5/2004 Dega111e1a11
`5/2004 $835116
`6/2004 Fa_11a_1e1a11
`7/2004 Leedy
`1/2005 Leedy
`3/2005 Hong
`3/2005 Chen et 01.
`5/2005 Leedy
`5/2005 Gudesen et al.
`12/2005 Akram et al.
`9/2006 Schoenfeld et al.
`11/2006 Leedy
`2/2007 Leedy
`2/2007 Konishi et al.
`3/2007 Leedy
`
`7,230,316 B2
`
`6/2007 Yamazaki etal.
`
`7,354,798 B2
`
`4/2008 Pogge et al.
`
`7,474,004 B2
`7,479,694 B2
`
`1/2009 Leedy
`1/2009 Leedy
`
`7,489,025 B2
`
`2/2009 Chen etal.
`
`7,550,805 B2
`
`6/2009 Leedy
`
`7,705,466 B2
`7,736,948 B2
`
`4/2010 Leedy
`6/2010 Dekkeretal.
`
`7,911,012 B2
`
`3/2011 Leedy
`
`8,410,517 132*
`2001/0002711 A1
`2001/0013423 A1
`
`4/2013 Leedy ~~~~~~~~~~~~~~~~~~~~~~~~~ ~~ 257/777
`6/2001 Gonzalez
`8/2001 Dalaletal.
`
`2001/0025364 A1
`2001/0033030 A1
`
`9/2001 Kaneko
`10/2001 Leedy
`
`2002/0132465 A1
`
`9/2002 Leedy
`
`2003/0184976 A1
`2003/0197253 A1
`
`10/2003 Brandenburg et al.
`10/2003 Gannetal.
`
`2003/0223535 A1
`2004/0000708 A1
`
`12/2003 Leedy
`1/2004 Rappolt etal.
`
`2004/0140547 A1
`
`7/2004 Yamazaki etal.
`
`2004/0251557 A1
`2005/0023656 A1
`2005/0051841 A1
`2005/0051904 A1
`2005/0082641 A1
`2006/0231927 A1
`2007/0035033 A1
`2007/0176297 A1
`
`12/2004 Kee
`2/2005 Leedy
`3/2005 Leedy
`3/2005 Kim et al.
`4/2005 Leedy
`10/2006 Ohno
`2/2007 Ozguz et 211.
`8/2007 Zohni
`
`Page 4 0f31
`
`US 8,907,499 B2
`Page 4
`
`200870237591 A1
`2008 0254572 A1
`:32:/3:32:11 :1
`2009/0014897 A1
`2009/0067210 A1
`2009/0174082 A1
`2009/0175104 A1
`2009/0194768 A1
`2009/0218700 A1
`2009/0219742 A1
`2009/0219743 A1
`2009/0219744 A1
`2009/0219772 A1
`2009/0230501 A1
`2010/0148371 A1
`2010/0171224 A1
`2010/0171225 A1
`2010/0172197 A1
`2010/0173453 A1
`2011/0042829 A1
`2011/0198672 A1
`
`1072008 Leegy
`10 2008 Lee y
`11/233: 18:1ee y
`1/2009 Ohno
`3/2009 Leedy
`7/2009 Leedy
`7/2009 Leedy
`8/2009 Leedy
`9/2009 Leedy
`9/2009 Leedy
`9/2009 Leedy
`9/2009 Leedy
`9/2009 Leedy
`9/2009 Leedy
`6/2010 Kaskoun et 211.
`7/2010 Leedy
`7/2010 Leedy
`7/2010 Leedy
`7/2010 Leedy
`2/2011 Kaskoun et 211.
`8/2011 Leedy
`
`FOREIGN PATENT DOCUMENTS
`
`3
`
`E1,
`
`E1,
`
`E1,
`E1,
`
`E1,
`
`E1,
`
`E1,
`E1,
`
`G13
`
`JP
`11,
`11,
`
`11,
`11,
`
`11,
`
`11,
`11,
`
`11,
`11,
`
`11,
`
`11,
`11,
`11,
`JP
`JP
`JP
`JP
`JP
`
`234418
`
`314437
`
`1011987
`
`571989
`
`487302
`
`5/1992
`
`0 518 774
`518283
`
`1271992
`1271992
`
`0531723
`
`371993
`
`554003
`
`871993
`
`703019
`731525
`
`2125108
`
`6074643
`00120871
`0130059
`
`03070484
`1199470
`
`371990
`971990
`
`271984
`
`4/1935
`771985
`271980
`
`471988
`971988
`
`1101_199470
`
`871989
`
`2082504
`2239027
`
`3174715
`3284871
`
`3/1990
`971990
`
`771991
`1271991
`
`4070940
`
`371992
`
`450950
`5109977
`05250900
`5283607
`06.251172
`05-291250
`08-017962
`8017962
`
`1271992
`471993
`9/1993
`10/1993
`9/1994
`10/1994
`1/1996
`1/1996
`
`Page 4 of 31
`
`

`

`US 8,907,499 B2
`Page 5
`
`(56)
`
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`W0
`
`References Cited
`FOREIGN PATENT DOCUMENTS
`
`08-083884
`08-504060
`4196263
`9152979
`10107065
`10209371
`261001
`8910255
`9009093
`9105366
`9203848
`9217901
`9413121
`9509438
`9641204
`9641264
`9641624
`9819337
`0105366
`03078305
`
`3/1996
`4/1996
`7/1996
`6/1997
`4/1998
`8/1998
`9/1999
`11/1989
`8/1990
`4/1991
`3/1992
`10/1992
`6/1994
`4/1995
`12/1996
`12/1996
`12/1996
`5/1998
`1/2001
`9/2003
`
`OTHER PUBLICATIONS
`
`“Christensens Physics of Diagnostic Radiology,” Currey et al., pp.
`29-33, 1990.
`“IC Tower Patent: Simple Technology Receives Patent on the IC
`Tower, a Stacked Memory Technology”, http://ww-w.simpletech.
`com/whatsnew/memory/@60824.htrn (1998).
`“Miniature Electro Microscopes Without Vacuum Pumps, Self-Con-
`tained Microfabricated Devices with Short Working Distances,
`Enable Operation in Air,” NASA Tech Briefs, 39-40 (1998).
`“Partitioning Function and Packaging of Integrated Circuits for
`Physical Security of Data,” IBM Technical Disclosure Bulletin, IBM
`Corp., 32(1):46-49 (Jun. 1989).
`Aboaf, J.A., “Stresses in Si0.sub.2 Films Obtained from the Thermal
`Decomposition ofTetraethylortho silicate—Effect of Heat Treatment
`and Humidity,” J. Electrochem. Soc.: Solid State Science; 116(12):
`1732-1736 (Dec. 1969).
`Allen, Mark G., and Senturia, Stephen D., “Measurement of
`Polyimide Interlayer Adhesion Using Microfabricated Structures”;
`Sep. 25-30, 1988.
`Alloert, K., et al., “A Comparison Between Silicon Nitride Films
`Made by PCVD of N.sub.2-SiH.sub.4/Ar and N.sub.2-SiH.sub.4/
`He,” Journal of the Electrochemical Society, vol. 132, No. 7, pp.
`1763-1766, (Jul. 1985).
`Bailey, R., “Glass for Solid-State Devices: Glass film has low intrin-
`sic compressive stress for isolating active layers of magnetic-bubble
`and other solid-state devices,” NASA Tech Brief (1982).
`Boyer, P.K.; Collins, G.J.; Moore, C.A.; Ritchie, W.K,; Roche, G. A.;
`Solanski, R. (A); Tang, C.C.; “Microelectronic thin film deposition
`by ultraviolet laser photolysis Monograph Title—Laser processing of
`semiconductor devices”; 1983; pp. 120-126.
`Chang, E.Y.; Cibuzar, G.T.; Pande, KP; “Passivation ofGaAs FETs
`with PECVD silicon nitride films of different stress states”; Sep.
`1988; pp. 1412-1418.
`Chen, Y.S.; Fatemi, H.; “Stress measurements on multilevel thin film
`dielectric layers used in Si integrated circuits”; May-Jun. 1986; pp.
`645-649.
`Chu et al., ed., 3D Packaging for Integrated Circuit Systems, Sandia
`Report SAND96-2801, UC-704, Nov. 1996.
`Draper, B. L.; Hill, T.A.; “Stress and stress relaxation in integrated
`circuit metals and dielectrics”; Jul.-Aug. 1991; pp. 1956-1962.
`European Search Report for Application No. EP 02 00 9643 (date
`completed: Oct. 8, 2002).
`Garino, T.J.; Harrington, H. M., “Residual stress in PZT thin films
`and its effect on ferroelectric properties”; 1992; pp. 341-347.
`Guckel, H.; “Surface micromachined pressure transducers”; 1991;
`pp. 133-146.
`Hayashi et al ., A New Three Dimensional IC Fabrication Technology,
`Stacking Thin Film Dual-CMOS Layers, NEC Microelectronics
`Research Laboratories, 1991 IEEE.
`
`Hendricks et al., “Polyquinoline Coatings and Films: Improved
`0rganic Dielectrics for ICs and MCMs,” Eleventh IEEE/CHMT
`International Electronics Manufacturing Technology Symposium,
`pp. 361-365 (1991).
`Hsieh, et al., “Directional Deposition of Dielectric Silicon 0xide by
`Plasma Enhanced TEOS Process,” 1989 Proceedings, Sixth Interna-
`tional IEEE VLSI Multilevel Interconnection Conference, pp. 411-
`415 (1989).
`Jones, R.E., Jr. “An evaluation of methods for passivating silicon
`integrated circuits”, Apr. 1972; pp. 23-28.
`Knolle, W.R., et al., “Characterization of 0xygen-Doped, Plasma-
`Deposited Silicon Nitride,” Journal of the Electrochemical Society,
`vol. 135, No. 5, pp. 1211-1217, (May 1988).
`(M.I. Kalinin
`Kochugova,
`I.V.; Nikolaeva, L.V.; Vakser, N.M.,
`Leningrad Polytechnic Institute (USSR); “Electrophysical investiga-
`tion ofthin-layered inorganic coatings”; 1989: pp. 826-828.
`Koyanagi, Different Approaches to 3D Chips, Dept. of Bioengineer-
`ing and Robotics, TohokuUniversity, Japan, pp. 10, 11, 13, 14, 16, 19.
`Krishnamoorthy, et al., “3 -D Integration of MQW Modulators 0ver
`Active Submicron CMOS Circuits: 375 Mb/s Transimpedance
`Receiver-Transmitter Circuit,” IEEE Photonics Technology Letters,
`2(11): 1288-1290 (Nov. 1991.
`Maw, T.; Hopla, R.E., “Properties of a photoimageable thin
`polyimide film”; Nov. 26-29, 1990; pp. 71-76.
`Mitsun1asa Koyanagi et al., “Design of 4-KBIT X 4-layer 0ptically
`Coupled Three-Dimensional Common Memory for Parallel Proces-
`sor System,” IEEE Journal of Solid-State Circuits, vol. 25. No. 1, Feb.
`1, 1990.
`Nguyen, S.V., Plasma Assisted Chemical Vapor Deposited Thin
`Films for Microelectronic Applications, J. Vac. Sci. Technol. vol. B4,
`No. 5, pp. 1159-1167, (Sep.-0ct. 1986).
`0lmer, et al., “Intermetal Dielectric Deposition by Plasma Enhanced
`Chemical Vapor Deposition,” Fifth IEEE/CHMT International Elec-
`tronic Manufacturing Technology Symposium—Design-to-Manu-
`facturing Transfer Cycle, pp. 98-99 (1998).
`Pai, Pei-Lin; “Multilevel Interconnection Technologies—A Frame-
`work and Examples”; 1987; pp. 1871.
`Partial European Search Report for Application No. EP 02009643
`(Oct. 8, 2002).
`Pei-Lin Pai; Chetty, A.; Roat, R., Cox, N.; Chiu Ting; “Material
`characteristics of spin-on glasses for interlayer dielectric applica-
`tions”; Nov. 1987, pp. 2829-2834.
`Phys. Rev. B., Condens, Matter Mater. Phys. (USA), Physical Review
`B (Condensed Matter and Materials Physics), Mar. 15, 2003, APS
`through AIP, USA.
`Reche, J.J. H.; “Control ofthin film materials properties used in high
`density multichip interconnect”; Apr. 24-28, 1989; p. 494.
`Riley, P.E.; Shelley, A.; “Characterization of a spin-applied dielectric
`for use in multilevel metallization”: May 1988; pp. 1207-1210.
`Runyan, W. R., “Deposition of Inorganic Thin Films”, Semiconduc-
`tor Integrated Circuit Processing Technology, p. 142 (1990).
`S Wolf, Silicon Processing for the VLSI Era, 1990, Lattice Press, vol.
`2, p. 191.
`Salazar, M., Wilkins, C.W., Jr.; Ryan, V.W.: Wang, T.T.; “Low stress
`films of cyclized polybutadiene dielectrics by vacuum annealing”;
`Oct. 21-22, 1986; pp. 96-102.
`Scheuerman, R.J., “Fabrication of Thin Dielectric Films with Low
`Internal Stresses,” J. Vac. Sci. and Tech., 7(1): 143-146 (1970).
`Smith et al., Generation of Minimal Vertex Covers for Row/Colunm
`Allocation in Self-Repairable Arrays, IEEE Transactions on Com-
`puters, vol. 45, No. 1, Jan. 1996, pp. 109-115.
`Sun, R.C.; Tisone, T.C.: Cruzan, PD.; “Internal stresses and resistiv-
`ity of low-voltage sputtered tungsten films (microelectronic cct. con-
`ductor)”; Mar. 1973; pp. 1009-1016.
`Sung et al., “Well-aligned carbon nitride nanotubes synthesized in
`anodic alumina by electron cyclotron resonance chemical vapor
`deposition,”Applied Physics Letters, vol. 74, No. 2, 197, 1999, Jan.
`11, 1999.
`Svechnikov, S.V., Kobylyatskaya, M.F.: Kimarskii, V.I.; Kaufman,
`A.P.; Kuzolvlev, Yu.I.; Cherepov, Ye. I.; Fomin, B.I.; “A switching
`plate with aluminum membrane crossings of conductors”; 1972.
`Sze, S. M., “Surface Micromaching”, Semiconductor Sensors, pp.
`58-63 (1994).
`
`Page 5 0f3l
`
`Page 5 of 31
`
`

`

`US 8,907,499 B2
`Page 6
`
`(56)
`
`References Cited
`OTHER PUBLICATIONS
`
`Tamura, H.; Nishikawa, T.; Wakino, K.; Sudo, T.; “Metalized MIC
`substrates using high K dielectric resonator materials”: Oct. 1988;
`pp. 117-126.
`Tessier, et al., “An Overview of Dielectric Materials for Multichip
`Modules,” SPE, Electrical & Electronic Div., (6)1260-269 (1991).
`Tielert et al., “Benefits of Vertically Stacked Integrated Circuits for
`Sequential Logic,” IEEE, XP-000704550, 121-124 (Dec. 5, 1996).
`Townsend, P.H.; Huggins, R.A.; “Stresses in borophosphosilicate
`glass films during thermal cycling”; Oct. 21-22, 1986; pp. 134-141.
`Treichel, et al., “Planaized Low-Stress Oxide/Nitride Passivation for
`ULSI Devices,” J. Phys IV, Colloq. (France), 1 (C2): 839-846 (1991).
`Vossen, John L., “Plasma-Enhanced Chemical Vapor Deposition”,
`Thin Film Processes II, pp. 536-541 (1991).
`Wade, T.E.; “Low temperature double-exposed polyimide/oxide
`dielectric for VLSI multilevel metal interconnection”: 1982: pp. 516-
`5 19.
`
`Wolf, Stanley and Richard N. Tauber; Silicon Processing for the
`VLSI Era, vol. 1: Process Technology; Sunset Beach, CA: Lattice
`Press, 1986, pp. 191-194.
`Wolf, Stanley, “Basics of Thin Films”, Silicon Processing for the
`VLSI Era, pp. 115, 192-193 and 199 (1986).
`Wolf, Stanley; Silicon Processing for the VLSI Era, 1990, Lattice
`Press, vol. 2, p. 191.
`Bollmann et al., Three Dimensional Metallization for Vertically Inte-
`grated Circuits, Materials for Advanced Metallization, 1997, Euro-
`pean Workshop; Date of Conference: Mar. 16-19, 1997.
`Krisbnamoorthy, et al., “3 -D Integration of MQW Modulators Over
`Active Submicron CMOS Circuits: 375 Mb/s Transimpedance
`Receiver-Transmitter Circuit,” IEEE Photonics Technology Letters,
`2(11): 1288-1290 (Nov. 1995).
`Boyer et al., “Microelectronic Thin Film Deposition by UV Laser
`Photolysis” Proc. Soc. of Photo-Instrumentation Eng., Jan. 1983.
`Olmer, et al., “Intermetal Dielectric Deposition by Plasma Enhanced
`Chemical Vapor Deposition,” Fifth IEEE/CHMT International Elec-
`tronic Manufacturing Technology Symposium—Design-to-Manu-
`facturing Transfer Cycle, pp. 98-99; OCt. 10, 1988.
`
`* cited by examiner
`
`Page 6 0f31
`
`Page 6 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 1 of 9
`
`US 8,907,499 B2
`
`
`
`Figure 1a
`
`Page 7 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 2 of 9
`
`US 8,907,499 B2
`
`ZZZZZZZ ZZZZZZZZZ,
`(ZZZZZZZ ZZZZZZZZZZZY
``- 107C
`
`103b
`
`105b
`
`ZZZZZZZ ZZZZZZZZZZZZZZZ)
`ZZZZZZZ,
`ZZZZZZZZZZZZZZZO
`
`ZZZZZZZ ZZZZZZZZZZZZZZZZZ
`ZZZZZZZ ZZZZZZZZZZZZZZZZZ
`
`
`
`Figure 1b
`
`Page 8 of 31
`
`

`

`U.S. Patent
`U.S. Patent
`
`Dec. 9, 2014
`Dec. 9, 2014
`
`Sheet 3 of 9
`Sheet 3 of9
`
`US 8,907,499 B2
`US 8,907,499 B2
`
`
`
`3.
`100
`
`Page 9 0f31
`
`i
`Figure1c
`
`Page 9 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 4 of 9
`
`US 8,907,499 B2
`
`IOZ
`
`LIIz (ŽSREDIT?TIELTEHETETTETETTERETTET
`
`
`
`
`lae (ATT?L?JIE IEEE|[H][E][E]] EITETET
`
`lae (IEEE/IEEE|[E][E][E][EITEITETE]]} \,
`
`
`
`
`
`Page 10 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 5 of 9
`
`US 8,907,499 B2
`
`IOZ
`
`qZ ?In?IJI
`
`
`
`
`
`
`
`
`
`
`LIIz (/SHEETTERLIEHEITHIITEITETITEITETITET
`
`•{JEEIETEEEEEE|| [EITETITEITETETTET
`
`Page 11 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 6 of 9
`
`US 8,907,499 B2
`
`
`lae (/[E][E][E][E][E][E][E][E][E][EITETETTE]]}t, … (AIEEEEEEEEE|
`IETEITETET
`
`TJ,80%
`
`
`
`
`
`
`
`GIZ
`
`Page 12 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 7 of 9
`
`US 8,907,499 B2
`
`().
`
`
`
`
`
`
`
`cr:
`
`r-+
`
`Figure 3
`
`Page 13 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 8 of 9
`
`US 8,907,499 B2
`
`?I?
`
`~ZZZZZZZZZZZZZZZZZZZZZZZZ_2
`
`º z-º?zº?z-z-z
`
`
`
`|S
`
`
`
`-^ | | |
`S!<<<$$<<<<< SI
`
`ZZZZZZZZZZZZZZZZZZZ_<> IZ-Z-Z
`
`Page 14 of 31
`
`

`

`U.S. Patent
`
`Dec. 9, 2014
`
`Sheet 9 of 9
`
`US 8,907,499 B2
`
`
`
`|
`EH,
`LTTE
`: TDICTDETT
`5
`|
`| |
`| |
`| |
`||
`:
`|
`| D-3 ||
`|| || ||º
`|
`|| Y | |
`| |
`|
`;
`-Pºs-L-I-I-I-I-I-B)
`
`G §
`
`É
`
`#
`
`G. g
`
`Page 15 of 31
`
`

`

`US 8,907,499 B2
`
`1
`THREE DIMENSIONAL STRUCTURE
`MEMORY
`
`BACKGROUND OF THE INVENTION
`
`1. Field of the Invention
`
`The present invention relates to stacked integrated circuit
`memory.
`2. State of the Art
`
`Manufacturing methods for increasing the performance
`and decreasing the cost of electronic circuits, nearly without
`exception, are methods that increase the integration of the
`circuit and decrease its physical size per equivalent number of
`circuit devices such as transistors or capacitors. These meth-
`ods have produced as of 1996 microprocessors capable of
`over 100 million operations per second that cost less than
`$1,000 and 64 Mbit DRAM circuits that access data in less
`than 50 ns and cost less than $50. The physical size of such
`circuits is less than 2 cm2. Such manufacturing methods
`support to a large degree the economic standard of living in
`the major industrialized countries and will most certainly
`continue to have significant consequences in the daily lives of
`people all over the world.
`Circuit manufacturing methods take two primary forms:
`process integration and assembly integration. Historically the
`line between these two manufacturing disciplines has been
`clear, but recently with the rise in the use of MCMs (Multi-
`Chip Modules) and flip-chip die attach, this clear separation
`may soon disappear. (The predominate use of the term Inte-
`grated Circuit (IC) herein is in reference to an Integrated
`Circuit in singulated die form as sawed from a circuit sub-
`strate such as s semiconductor wafer versus, for example, an
`Integrated Circuit in packaged form.) The majority of ICs
`when in initial die form are presently individually packaged,
`however, there is an increasing use of MCMs. Die in an MCM
`are normally attached to a circuit substrate in a planar fashion
`with conventional IC die I/O interconnect bonding methods
`such as wire bonding, DCA (Direct Chip Attach) or FCA
`(Flip -Chip Attach).
`Integrated circuit memory such as DRAM, SRAM, flash
`EPROM, EEPROM, Ferroelectric, GMR (Giant MagnetoRe-
`sistance), etc. have the common architectural or structural
`characteristic of being monolithic with the control circuitry
`integrated on the same die with the memory array circuitry.
`This established (standard or conventional) architecture or
`circuit layout structure creates a design trade-off constraint
`between control circuitry and memory array circuitry for
`large memory circuits. Reductions in the fabrication geom-
`etries of memory cell circuitry has resulted in denser and
`denser memory ICs, however, these higher memory densities
`have resulted in more sophisticated control circuitry at the
`expense of increased area of the IC. Increased IC area means
`at least higher fabrication costs per IC (fewer ICs per wafer)
`and lower IC yields (fewer working ICs per wafer), and in the
`worst case, an IC design that carmot be manufactured due to
`its non-competitive cost or unreliable operation.
`As memory density increases and the individual memory
`cell size decreases more control circuitry is required. The
`control circuitry of a memory IC as a percentage of IC area in
`some cases such as DRAMs approaches or exceeds 40%. One
`portion of the control circuitry is the sense amp which senses
`the state, potential or charge of a memory cell in the memory
`array circuitry during a read operation. The sense amp cir-
`cuitry is a significant portion of the control circuitry and it is
`a constant challenge to the IC memory designer to improve
`
`10
`
`15
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`2
`
`sense amp sensitivity in order to sense ever smaller memory
`cells while preventing the area used by the sense amp from
`becoming too large.
`If this design constraint or trade-off between control and
`memory circuits did not exist, the control circuitry could be
`made to perform numerous additional functions, such as sens-
`ing multiple storage states per memory cell, faster memory
`access through larger more sensitive sense amps, caching,
`refresh, address translation, etc. But this trade-off is the
`physical and economic reality for memory ICs as they are
`presently made by all manufacturers.
`The capacity of DRAM circuits increases by a factor of
`four from one generation to the next; e.g. 1 bit, 4 bit, 16 Mbit
`and 64 Mbit DRAMs. This four times increase in circuit
`
`memory capacity per generation has resulted in larger and
`larger DRAM circuit areas. Upon introduction of a new
`DRAM generation the circuit yields are too low and, there-
`fore, not cost effective for high volume manufacture. It is
`normally several years between the date prototype samples of
`a new DRAM generation are shown and the date such circuits
`are in volume production.
`Assembling die in a stacked or three dimensional (3D)
`manner is disclosed in U.S. Pat. No. 5,354,695 ofthe present
`inventor,
`incorporated herein by reference. Furthermore,
`assembling die in a 3D manner has been attempted with
`regard to memory. Texas Instruments of Dallas Tex., Irvine
`Sensors ofCosta Mesa Calif. and Cubic Memory Corporation
`of Scotts Valley Calif. have all attempted to produce stacked
`or 3D DRAM products. In all three cases, conventional
`DRAM circuits in die form were stacked and the interconnect
`
`between each DRAM in the stack was formed along the
`outside surface of the circuit stack. These products have been
`available for the past several years and have proved to be too
`expensive for commercial applications, but have found some
`use in space and military applications due to their small
`physical size or footprint.
`The DRAM circuit type is referred to and often used as an
`example in this specification, however,
`this invention is
`clearly not limited to the DRAM type of circuit. Undoubtedly
`memory cell types such as EEPROMs (Electrically Erasable
`Programmable Read Only Memories), flash EPROM, Ferro-
`electric, GMR Giant Magneto Resistance or combinations
`(intra or inter) of such memory cells can also be used with the
`present Three Dimensional Structure (3DS) methods to form
`3DS memory devices.
`The present invention furthers, among others, the follow-
`ing objectives:
`1