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iiAR.3i.2o04 12:36PM
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`SONNENSCHEIN
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`iio.3527"“P.2
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`L-,"c‘i;’ifi§ii"e°s"7"i".‘é3‘a‘3§ ‘7"2‘i i°§’é?.Z‘ifi225'&°.f.iL’5T’ié‘flu‘§?§n1i‘
`United States Patent and Trademark Office on
`Ni (I mi. 2.; a coal
`
`DaleofFacsimile
`
`Pagi E. fiuch, Ph.Q,
`Name of Applicant, assignee or
`Registered
`presentative
`
`_
`
`RECEIVED
`GENTEAL FAX CENTER
`MAR 3 1 2004
`‘
`
`S
`
`‘
`
`e
`
`-
`
`.
`
`_ 1-43.81?3
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`Our File No. 997999500011
`
`in re Application of:
`
`James E. Nulty. et al.
`
`3953' N°- 091540510
`
`Filing Date: March 31, 2000
`
`For Method for Eliminating Lateral
`Spacer Erosion on Enclosed
`Contact Topographies During RF
`Sputter Cleaning
`
`~.4gr\_a~_-».—sa\¢»a§«‘a\/
`
`Examiner Chris C. Chu
`
`Group An Unit No_ 2315
`
`CORRECTED AMENDMENT
`
`Mail stop - Al’-'
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Dear Sir:
`
`This Amendment is identical to the last amendment filed but It corrects the format
`
`of the presented claim set. Applicants thank Examiner Chu for pointing out this
`omission.
`
`PAGE 2!?‘ RCVD AT 3J31i2fl04 1:34:54 PM [Eastern Standard Time] ‘ SVRIUSPTO-EFXRF-1l25 ‘ DN|S:2T31?24 * C8102‘ DURATION (mm-ss):li1-36
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`INTEL 1 1 19
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`

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`MAR. 31. 2004 12:36PM
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`SONNENSCHEIN
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`N0. 3527—P.
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`3
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`IN THE SPECIFICATION
`
`Please add the following paragraph to the specification. page 15, after line 16:
`
`The phrase "substantialiy rectangular" means that a side of the spacer has an
`angle relative to the substrate surface of more than 85°.
`'
`
`PAGE 317 ‘ RCVD AT 3I31{2fl04 1:34:54 PM [Easlem standardTime1* SVR:USP'|'0-EFXRF-1f25 ' DN|S:2731724 ' CSID: ’ DURATION (nun-ss):fl1-36
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`2
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`

`
`l\ill'-iii. 3i. 2004 12:36PM
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`SONNEllSCHElN
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`N0. 3527
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`P.
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`4
`
`IN THE CLAIMS
`
`1-24.
`
`(Cancelled)
`
`25.
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`
`said etch stop material comprises silicon nitride.
`
`26.
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`
`said etch stop material comprises silicon dioxide.
`
`27.
`
`(Currently Amended) A structure. comprising:
`
`(a) a conductive layer disposed over a substrate;
`
`(b) a first insulating layer on the conductive layer;
`
`(c) a contact region in said first insulating layer;
`
`.
`
`(d) at least one insulating spacer in the contact region adjacent to the first
`
`insulating layer; and
`
`(e) an etch stop material over said first insulating layer and adjacent to the
`
`insulating spacer. the etch stop material being a different material from the insulating
`spacen
`
`wherein a side of the insulating spacer has an angle relative to the
`
`substrate surface of more than 85°
`
`region.
`
`28.
`
`(Cancelled).
`
`29.
`
`(Previously presented) The structure of Claim 27, wherein the insulating
`
`spacer has a surface portion in the contact region without overlying etch stop material.
`
`30.
`
`(Previously presented) The structure of Claim 29. wherein the insulating
`
`spacer surface portion without overlying etch stop material comprises an insulating
`
`spacer surface portion most distant from said substrate.
`
`31.
`
`(Cancelled).
`
`PAGE 417 ‘ RCVD AT 3l31l2fl04 1:34:54 PM [Easlem Standard Time] ’ SVR:U$PTO-EFXRF-1i25 ‘ DNlS:2731724 * CSIDI ‘ DURATION (mm-ss):01-36
`
`3
`
`

`
`MAR.3i.2004i2:37PM
`
`SONNENSCHHN
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`N03527
`
`P-5
`
`J
`
`32.
`
`(Previously presented) The structure of Claim 27, further comprising a
`
`second insulating layer on the etch stop layer and overthe conductive layer.
`
`33.
`
`(Previously presented) The structure of Claim 32, further comprising a
`
`second conductive material in the contact region.
`
`34.
`
`(Currently amended) A structure. comprising:
`
`(a) a first electrically conductive material formed in and/or on a surface of
`
`a substrate;
`
`(b) a contact opening in a region adjacent to a second electrically
`conductive material formed on the substrate;
`
`(c) an electrically insulatlve spacer in the contact opening adjacent to the
`
`second electrically conductive material;
`
`T
`
`(cl) an etch stop material over the electrically lnsulative spacer and the first
`
`and second electrically conductive materials, the etch stop material being a different
`
`material from the insulative spacer;
`
`(e) a blanket layer over the etch stop material; and
`
`(f) an opening through a first part of the etch stop material to the first
`
`. electrically conductive material,
`
`wherein a side of the electrically lnsulatlve spacer has a-substantially-Feetangular
`
`
`'
`-e-=-. .-.::--:..-: --
`the substrate surface of more than 85'.
`
`.=*:- :
`
`::-'2:-: ..-
`
`ngnglgrglgflveto
`
`35.
`
`(Cancelled).
`
`36.
`
`(Previously presented) The structure of Claim 34, wherein the electrically
`
`insulative spacer has a surface portion without overlying etch stop material.
`
`37.
`
`(Previously presented) The structure of Claim 36, wherein the electrically
`
`insulatlve spacer surface portion without oveiiying etch stop material comprises a
`
`surface portion most distant from the substrate.
`
`PAGE Si?‘ RCVD AT 3lJ1l200-l 1:34:54 PM [Eastern Standard Time]* SVltUSPTO-EFXRF-1l25 ' DN|S:2?31?24 ‘ CSID: * DURATION (mm-ss):01-36
`
`4
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`

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`MAR. 31. 2004 12:37PM
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`SONNENSCHEIN
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`N0. 3527
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`P.
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`6
`
`38.
`
`(Previously presented) The structure of Claim 34. further comprising a
`
`second insulating layer on the etch stop layer and over the conductive layer.
`
`39.
`
`(Previously presented) The structure of Claim 38. further comprising a
`
`second conductive material in the Contact region.
`
`PAGE 6!? ‘ RCVDkT3l31l2l1041:34:54PM [Eastern Standard Time]*S\lR:USPTO£FXRF-1l25 ‘ DN|S:2731724’ CSIDI * DURATION (mm-ss):fl1-36
`
`5
`
`

`
`MAR.3i.200412:37PM
`
`SONNENSCHEIN
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`iio.3527_P.
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`7‘
`
`REMARKS
`
`The amendment to claims 27 and 34, and the specification, are supported by the
`
`specification, page 8, lines 19-23, and page 10. lines 8-11. No new matter has been
`added.
`
`Applicants would like to thank Examiner Chu for the courteous and helpful
`
`discussion held with applicants representative on February 19, 2004. During that
`
`discussion. it was indicated that the above amendments would clarify the claims.
`
`Applicants submit that the application is now in condition for allowance. Early
`
`notice of such action is earnestly solicited.
`
`Respectfully submitted,
`/ Ref ML .»_.s,g:’5
`.
`
`Paul E. Rauc:!—:-<P.
`
`Registration No. 38.591
`Attorney for Applicants
`SONNENSCHEIN NATH & ROSENTHAL
`P. 0. BOX 061080
`WACKER DRIVE STATION. SEARS TOWER
`CHICAGO, IL 60606
`(312) 876-8000
`
`.
`
`5
`
`PAGE‘?l7 ’ RCVD AT 3l31l2D04 1:34:54 PM [Eastern standard Time] * SVRIUSPTO-EFXRF-1125 ' DN|S:2731724 ‘ CSIDI ’ DURATION lrrrn-ss):01-36

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