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`iio.3527"“P.2
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`United States Patent and Trademark Office on
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`DaleofFacsimile
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`Pagi E. fiuch, Ph.Q,
`Name of Applicant, assignee or
`Registered
`presentative
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`RECEIVED
`GENTEAL FAX CENTER
`MAR 3 1 2004
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`_ 1-43.81?3
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`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
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`Our File No. 997999500011
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`in re Application of:
`
`James E. Nulty. et al.
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`3953' N°- 091540510
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`Filing Date: March 31, 2000
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`For Method for Eliminating Lateral
`Spacer Erosion on Enclosed
`Contact Topographies During RF
`Sputter Cleaning
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`~.4gr\_a~_-».—sa\¢»a§«‘a\/
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`Examiner Chris C. Chu
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`Group An Unit No_ 2315
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`CORRECTED AMENDMENT
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`Mail stop - Al’-'
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
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`Dear Sir:
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`This Amendment is identical to the last amendment filed but It corrects the format
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`of the presented claim set. Applicants thank Examiner Chu for pointing out this
`omission.
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`IN THE SPECIFICATION
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`Please add the following paragraph to the specification. page 15, after line 16:
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`The phrase "substantialiy rectangular" means that a side of the spacer has an
`angle relative to the substrate surface of more than 85°.
`'
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`IN THE CLAIMS
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`1-24.
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`(Cancelled)
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`25.
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`(Previously presented) The semiconductor apparatus of claim 27 wherein
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`said etch stop material comprises silicon nitride.
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`26.
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`(Previously presented) The semiconductor apparatus of claim 27 wherein
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`said etch stop material comprises silicon dioxide.
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`27.
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`(Currently Amended) A structure. comprising:
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`(a) a conductive layer disposed over a substrate;
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`(b) a first insulating layer on the conductive layer;
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`(c) a contact region in said first insulating layer;
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`.
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`(d) at least one insulating spacer in the contact region adjacent to the first
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`insulating layer; and
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`(e) an etch stop material over said first insulating layer and adjacent to the
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`insulating spacer. the etch stop material being a different material from the insulating
`spacen
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`wherein a side of the insulating spacer has an angle relative to the
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`substrate surface of more than 85°
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`region.
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`28.
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`(Cancelled).
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`29.
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`(Previously presented) The structure of Claim 27, wherein the insulating
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`spacer has a surface portion in the contact region without overlying etch stop material.
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`30.
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`(Previously presented) The structure of Claim 29. wherein the insulating
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`spacer surface portion without overlying etch stop material comprises an insulating
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`spacer surface portion most distant from said substrate.
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`31.
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`(Cancelled).
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`32.
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`(Previously presented) The structure of Claim 27, further comprising a
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`second insulating layer on the etch stop layer and overthe conductive layer.
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`33.
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`(Previously presented) The structure of Claim 32, further comprising a
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`second conductive material in the contact region.
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`34.
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`(Currently amended) A structure. comprising:
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`(a) a first electrically conductive material formed in and/or on a surface of
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`a substrate;
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`(b) a contact opening in a region adjacent to a second electrically
`conductive material formed on the substrate;
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`(c) an electrically insulatlve spacer in the contact opening adjacent to the
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`second electrically conductive material;
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`T
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`(cl) an etch stop material over the electrically lnsulative spacer and the first
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`and second electrically conductive materials, the etch stop material being a different
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`material from the insulative spacer;
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`(e) a blanket layer over the etch stop material; and
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`(f) an opening through a first part of the etch stop material to the first
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`. electrically conductive material,
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`wherein a side of the electrically lnsulatlve spacer has a-substantially-Feetangular
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`'
`-e-=-. .-.::--:..-: --
`the substrate surface of more than 85'.
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`.=*:- :
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`ngnglgrglgflveto
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`35.
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`(Cancelled).
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`36.
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`(Previously presented) The structure of Claim 34, wherein the electrically
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`insulative spacer has a surface portion without overlying etch stop material.
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`37.
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`(Previously presented) The structure of Claim 36, wherein the electrically
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`insulatlve spacer surface portion without oveiiying etch stop material comprises a
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`surface portion most distant from the substrate.
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`38.
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`(Previously presented) The structure of Claim 34. further comprising a
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`second insulating layer on the etch stop layer and over the conductive layer.
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`39.
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`(Previously presented) The structure of Claim 38. further comprising a
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`second conductive material in the Contact region.
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`REMARKS
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`The amendment to claims 27 and 34, and the specification, are supported by the
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`specification, page 8, lines 19-23, and page 10. lines 8-11. No new matter has been
`added.
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`Applicants would like to thank Examiner Chu for the courteous and helpful
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`discussion held with applicants representative on February 19, 2004. During that
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`discussion. it was indicated that the above amendments would clarify the claims.
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`Applicants submit that the application is now in condition for allowance. Early
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`notice of such action is earnestly solicited.
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`Respectfully submitted,
`/ Ref ML .»_.s,g:’5
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`Paul E. Rauc:!—:-<P.
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`Registration No. 38.591
`Attorney for Applicants
`SONNENSCHEIN NATH & ROSENTHAL
`P. 0. BOX 061080
`WACKER DRIVE STATION. SEARS TOWER
`CHICAGO, IL 60606
`(312) 876-8000
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