throbber
OmniVision Technologies
`OmniBSI™ Technology
`
`No Security: Public Information
`
`1
`
`Raytheon2029-0001
`
`Sony Corp. v. Raytheon Co.
`IPR2016-00209
`
`

`
`Safe harbor statement
`
`ƒ Except for historical information, the matters discussed in this presentation
`may contain forward-looking statements that are subject to risks and
`uncertainties. These risks and uncertainties could cause the forward-looking
`statements and OmniVision’s actual results to differ materially. In evaluating
`these forward-looking statements, you should specifically consider various
`factors, including the factors listed in the “Risk Factors” section of the
`Company’s most recent annual report filed on Form 10-K and most recent
`quarterly reports filed on Form 10-Q. These factors may cause the
`Company’s results to differ materially from any forward-looking statement.
`Forward-looking statements are only predictions and actual events or results
`may differ materially.
`
`ƒ OmniVision disclaims any obligation to update information contained in any
`forward-looking statement.
`
`No Security: Public Information
`
`2
`
`Raytheon2029-0002
`
`

`
`Agenda
`
`ƒ Pixel technology background
`
`ƒ Manufacturing OmniBSI devices
`
`ƒ Advantages of OmniBSI™
`
`ƒ Summary
`
`No Security: Public Information
`
`3
`
`Raytheon2029-0003
`
`

`
`Pixel technology background
`
`No Security: Public Information
`
`4
`
`Raytheon2029-0004
`
`

`
`Front-side Illuminated (FSI) pixels
`
`ƒ Most common sensing technology
`ƒ Tall metal stack-up makes getting
`photons to the photodiode difficult
`Æ Compromises sensitivity
`ƒ Restricts Chief Ray Angle (CRA)
`Æ Increases lens height
`ƒ Significant optical and electrical
`crosstalk
`ƒ Color and luminance shading varies
`with illuminant
`ƒ Smaller FSI pixels deliver
`unacceptably poor performance
`
`No Security: Public Information
`
`5
`
`Raytheon2029-0005
`
`

`
`OmniBSI technology
`
`ƒ Back-side Illuminated (BSI)
`sensors have been used for
`many years in highest
`performance applications
`(cid:129) Astronomy, military, scientific
`ƒ BSI devices were expensive due
`to fragility and processing costs
`
`ƒ OmniBSI breakthrough – the
`ability to mass produce very
`small, cost effective BSI pixels
`for high performance products
`
`No Security: Public Information
`
`6
`
`Raytheon2029-0006
`
`

`
`Manufacturing OmniBSI devices
`
`No Security: Public Information
`
`7
`
`Raytheon2029-0007
`
`

`
`Manufacturing OmniBSI devices
`OmniBSI manufacturing process
`
`No Security: Public Information
`
`8
`
`Raytheon2029-0008
`
`

`
`Manufacturing OmniBSI devices
`Manufacturing advantage of OmniBSI technology vs. SOI BSI
`
`ƒ Silicon On Insulator (SOI) is traditional technology for
`manufacturing BSI devices
`ƒ OmniVision’s proprietary BSI processing technology has none of
`the drawbacks of SOI-based BSI
`
`Global manufacturing
`capacity
`Dark current and hot
`pixel density
`
`Manufacturing cost
`
`OmniBSI
`Practically unlimited
`No sourcing risk
`Impurities can be removed
`from active area and removed
`completely during thinning
`process
`Uses standard wafers
`
`SOI BSI
`Limited global production
`capacity for SOI wafers
`Impurities in EPI layers
`are trapped by insulating
`layer, increasing dark
`current and hot pixels
`Costs of SOI raw wafers
`is approx. 8x higher
`
`No Security: Public Information
`
`9
`
`Raytheon2029-0009
`
`

`
`Manufacturing OmniBSI devices
`Comparison of OmniBSI impact vs. FSI to module design
`
`Property
`Die size
`
`FSI vs. OmniBSI
`SAME or BETTER - OmniBSI XY die size is the
`same for a given optical format & resolution.
`OmniBSI die may be smaller due to potential for
`additional metal layers and higher routing density
`
`Implications
`OmniBSI doesn’t increase module
`XY size.
`OmniBSI is compatible with FSI
`module design rules
`
`Die thickness SAME - OmniBSI and FSI can be supplied in the
`same die thicknesses
`SAME - OmniBSI offered in both CSP and COB
`Packaging
`packages
`technology
`Bondpad size SAME - Bondpad geometry, materials, layout,
`and design rules are identical
`SAME - OmniBSI device power and interfaces
`are electrically identical to FSI products
`SAME or BETTER - OmniBSI is more sensitive
`and more tolerant of lens XY misalignment (less
`color-shift and shading)
`
`Electrical
`properties
`Optical
`properties
`
`No impact on die handling
`processes or yield
`
`OmniBSI is compatible with the
`same die attach processes
`
`No impact to bonding yield or
`processes
`
`No change in support components,
`processors, PCB, or interconnect
`No impact to alignment, focus, or
`image quality testing processes or
`yields
`
`No Security: Public Information
`
`10
`
`Raytheon2029-0010
`
`

`
`Advantages of OmniBSI
`
`No Security: Public Information
`
`11
`
`Raytheon2029-0011
`
`

`
`Advantages of OmniBSI
`
`ƒ Improved Quantum Efficiency (QE) and sensitivity
`(cid:129) OmniBSI achieves 70-80% QE compared to 40% for FSI
`(cid:129) OmniBSI offers 50% increase in sensitivity
`ƒ Dramatically less electrical and optical crosstalk
`(cid:129) Less sensitivity to illuminant changes
`ƒ Wider Chief Ray Angle (CRA)
`(cid:129) Enables thinner modules
`(cid:129) Allows large aperture lenses for better low light performance
`(cid:129) Less shading due to CRA sensitivity
`(cid:129) Better for zoom lenses where CRAs change
`
`No Security: Public Information
`
`12
`
`Raytheon2029-0012
`
`

`
`Advantages of OmniBSI
`OmniBSI delivers higher sensitivity
`D65, 10 lux, 15 fps
`
`OV5633
`FSI is 960mV/lux-sec at 1.75 µm pixels
`
`OV5653
`BSI is1300 mV/lux-sec at 1.75 µm pixels
`
`OmniBSI is 50% more sensitive than FSI
`
`No Security: Public Information
`
`13
`
`Raytheon2029-0013
`
`

`
`Advantages of OmniBSI
`Optical crosstalk in FSI
`
`light
`
`light
`
`ƒ Optical crosstalk occurs when
`photons don’t follow their
`intended path
`
`ƒ Photons can bounce off metal
`layers into adjacent pixels,
`causing color crosstalk and
`loss of sharpness
`
`ƒ The ideal solution is to move
`the metal layers completely
`out of the optical path
`
`
`color filtercolor filter
`
`metal 2metal 2
`
`
`
`metal 1metal 1
`
`diode
`
`silicon
`
`
`
`color filtercolor filter
`
`diode
`
`No Security: Public Information
`
`14
`
`Raytheon2029-0014
`
`

`
`Advantages of OmniBSI
`
`
`OmniBSI reduces electrical crosstalkalk
`
`ƒ Electrical crosstalk occurs in silicon after
`the photon converts to an electron
`ƒ Goal: get all electrons into right photodiodes
`Three possible fates for an electron:
`ƒ
`(cid:129) Collected in correct photodiode --
`(cid:129) Collected in wrong photodiode /
`(cid:129) Absorbed into substrate and lost /
`ƒ Misplaced electrons reduce sharpness and
`color fidelity and increase noise
`ƒ OmniBSI photodiodes fill the majority of the
`silicon volume
`(cid:129) Nowhere for electrons to get lost
`ƒ Much higher probability that electrons end
`up in the right photodiode
`(cid:129)
`Increased QE & sensitivity
`(cid:129) Reduced color noise
`(cid:129)
`Increased sharpness (MTF)
`
`
`color filtercolor filter
`
`metal 2metal 2
`
`
`
`metal 1metal 1
`
`diode
`
`silicon
`
`FSI pixel
`
`
`color filtercolor filter
`silicon
`
`diodediode
`
`metal 1
`metal 2
`metal 3
`metal 4
`
`OmniBSI
`pixel
`
`No Security: Public Information
`
`15
`
`Raytheon2029-0015
`
`

`
`Advantages of OmniBSI
`Reduced color crosstalk in images
`
`sensor
`OmniBSI
`
`FSI sensor
`
`Tungsten
`
`Fluorescent
`
`Daylight
`
`No Security: Public Information
`
`16
`
`Raytheon2029-0016
`
`

`
`Advantages of OmniBSI
`Reduced color crosstalk in images
`
`
`
`FSI Colors FSI Colors FSI Colors
`OmniBSI colors
`are constant
`
`vary with vary with
`vary with
`across illuminants
`
`illuminantilluminant
`
`illuminantilluminant
`
`FSI colors vary
`with illuminant
`Tungsten
`
`Fluorescent
`
`Daylight
`
`No Security: Public Information
`
`17
`
`Sensor
`OmniBSI
`
`FSI Sensor
`
`Raytheon2029-0017
`
`

`
`Advantages of OmniBSI
`OmniBSI enables wider Chief Ray Angles (CRAs)
`
`Key observation: metal layers form an aperture, limiting the
`pixel’s acceptance angle
`
`OmniBSI CRA is much
`larger than FSI
`
`
`color filtercolor filter
`
`metal 2metal 2
`
`metal 1metal 1
`
`diode
`
`FSI imager
`
`
`color filtercolor filter
`diode
`
`OmniBSI imager
`
`No Security: Public Information
`
`18
`
`Raytheon2029-0018
`
`

`
`Advantages of OmniBSI
`OmniBSI enables thinner modules
`
`OmniBSI’s wider CRA
`allows lenses to be closer
`to the sensor
`
`FSI imager
`
`OmniBSI imager
`
`No Security: Public Information
`
`19
`
`Raytheon2029-0019
`
`

`
`Advantages of OmniBSI
`OmniBSI enables larger aperture lenses
`
`ƒ Larger aperture lenses, such as f/2.0 lenses, improve
`low-light performance by 2x
`ƒ Have to be careful to assess sharpness and
`manufacturability of large f/# lenses
`
`FSI imager
`
`siliconsilicon
`
`OmniBSI imager
`
`No Security: Public Information
`
`20
`
`Raytheon2029-0020
`
`

`
`Advantages of OmniBSI
`OmniBSI enables zoom lenses
`
`ƒ OmniBSI’s wider CRA range allows lens to change CRAs,
`as is the case for zoom lenses
`
`FSI imager
`
`
`
`siliconsiliconsilicon
`OmniBSI imager
`
`No Security: Public Information
`
`21
`
`Raytheon2029-0021
`
`

`
`Summary
`
`ƒ Advantages of OmniBSI
`(cid:129) 40% higher QE and 50% more sensitivity
`(cid:129) Less sensitivity to illuminant changes
`(cid:129) Less color and luminance shading
`(cid:129) Enables thinner modules
`(cid:129) Support for larger aperture lenses
`(cid:129) Well suited to zoom lens designs
`ƒ Manufacturing efficiency of OmniBSI
`(cid:129) OmniBSI is superior to SOI BSI approaches
`(cid:129) No impact to module manufacturing costs
`ƒ OmniBSI technology roadmap
`
`
`
`
`(cid:129) Enables both very small pixels and highest quality pixelsality pppiiiiiiiiiixxxxxxxxxxxxeeeeeeeeeeeeellllllllllssssssssssssssiiii lll
`
`
`
`OmniBSI Technology – the future of digital imaging
`
`No Security: Public Information
`
`22
`
`Raytheon2029-0022
`
`

`
`
`
`Thank YouThank You
`
`No Security: Public Information
`
`23
`
`Raytheon2029-0023

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