Sony Corp. v. Raytheon Co.
`IPR2016-00209
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`Raytheon2026-0001
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`

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`3l'27l'2015
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`Sony Global - News Release - Sony develops back-illuminated CMOS image sensor, realizing high picture quality, ne
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`miniaturization of pixels and widening optical angle response.
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`A back—illuminated structure minimizes the degradation of sensitivity to optical angle response, while also increasing the amount of light that
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`enters each pixel due to the lack of obstacles such as metal wiring and transistors that have been moved to the reverse of the silicon substrate.
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`However, compared to conventional front-illuminated structures, back—illuminated structures commonly causes problems such as noise, dark
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`current, defective pixels and color mixture that lead to image degradation and also cause a decrease in the signal-to-noise ratio.
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`To overcome this Sony has newly developed a unique photo—diode structure and on—chip lens optimized for back—illuminated structures, that
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`achieves a higher sensitivity of +6dB and a lower random noise of —2dB without light by reducing noise, dark current and defect pixels
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`compared to the conventional front-illuminated structure. Additionally, Sony's advanced technologies such as high—precision alignment have
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`addressed any color mixture problems.
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`Sony has continued to advance the speed and picture quality of its CMOS image sensors, such as "Exmor", with its unique "Column—Parallel
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`A/D Conversion Technique" and dual noise reduction, in addition to the imaging expertise it has accumulated throughout its history of CCD
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`development. With the development of this new back—illuminated structure, Sony has realized a CMOS image sensor with even higher
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`sensitivity and lower noise. Furthermore, the back—illuminated structure also expands device potential in areas such as speed and dynamic
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`range by enabling multiple metal wiring layers and greater flexibility in the transistor structure. Going forward, Sony will continue its
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`development of image sensors that combine ease—of—use, advanced image quality and cutting—edge pixel miniaturization.
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`Comparison between cross section of front-illuminated and back—illuminated structures
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`Incidental light
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`Incidental light
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`Substrate
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`Front-illuminated structure
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`Raytheon2026-0002
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`3"27:'2015
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`Sony Global - News Release - Sony develops back-illuninated CMOS image sensor. realizing high picttre quality. ne
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`Sample image
`Shoot with low illumination (30 Iux)
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`Front—i||uminate [1 structure
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`Bacl-eilluminated structure
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`Major features”
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`1) Improved optical wavelength sensitivity and optical angle response
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`Absolute sensitivity (F5.6)
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`+4.5dB
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`F-number (aperture) dependence (F2.0/F5.6) +1 .5dB
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`F-number (aperture) sensitivity (F2.0)
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`+6.0dB
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`2) Reduction of random noise
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`Random noise without light
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`—2.0dB
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`*1 Comparison between conventional (front-illuminated structure) and back-illuminated CMOS image sensor with the same pixel size (1.75 pm)
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`Home > AboutSony > Corporate Info > News Releases > 2008 > Sony develops back-illuminated CMOSimage sensor, realizing high picture quality, nearly
`twofold sensitivity(*1) and low noise
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`31'2"/i'2015
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`Sony Global - News Release - Sony develops back-illuminated CMOS image sensor, realizing high picure quality, ne
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