`IPR2016-00209
`
`Raytheon2002-0001
`
`
`
`Serial No. 006,120
`
`Art Unit
`
`1107
`
`Claims 1-7, 10-18 and Ziffiejected under 35 U.S.C. § 103 as
`being unpatentable over Riseman in combination with Yasumoto.
`
`Riseman teaches a device made by the method comprising the
`
`steps of providing a silicon substrate 21, a silicon dioxide
`
`etch-stop layer 20 overlying the silicon layer and a single
`
`crystal silicon wafer 10 overlying the S102 layer; forming a
`
`microelectronic circuit element 13 in the single crystal wafer;
`
`etching the silicon substrate 21 with a liquid etchant down to
`
`the silicon dioxide layer, and forming an electrical connection
`
`27 to the circuit element through the patterned 25 silicon
`
`dioxide layer and through the wafer.
`
`see column 4,
`
`line 52 to
`
`column 7,
`
`line 16.
`
`However, Riseman does not teach a device made by the method
`
`of attaching the front surface of the single crystal wafer to a
`
`second substrate containing a second microelectronic circuit
`
`element and electrically contacting the first and second circuit
`
`elements.
`
`Nonetheless, Yasumoto teaches such an embodiment.
`
`See
`
`column 4,
`
`line 56 to column 7,
`
`line 41.
`
`It would have been obvious to combine the methods of Riseman
`
`and Yasumoto because the method of Yasumotc would increase
`
`circuit density.
`
`Claims 8 and 20 are rejected under 35 U.S.C. § 103 as being
`
`unpatentable over Riseman in combination with Yasumoto as applied
`
`V
`
`RAYOOOOOOS
`
`Raytheon2002-0002
`
`
`
`Serial No. 006,120
`
`Art Unit
`
`1107
`
`to claims 1-7, 10-18 and 21 above, and further in View of
`
`Raschke.
`
`Riseman in combination with Yasumoto teaches all the
`
`essential elements of claims 8 and 20 except for the steps of
`
`placing a layer of epoxy between the single crystal wafer and the
`
`second substrate and degassing and curing the epoxy.
`
`Nevertheless, Yasumcto teaches that the two circuits are
`
`adhered by an adhesive resin.
`
`See column 7,
`
`lines 21-24.
`
`In addition, Raschke teaches a method of adhering circuit
`
`elements using epoxy resin and degassing the resin.
`
`See column
`
`3,
`
`lines 38-47.
`
`Because the method of Raschke enables the adhesion of
`
`circuit elements, it would have been obvious to combine the
`
`methods of the applied prior art.
`
`claim 9 is rejected under 35 U.S.c.
`
`5 103 as being
`
`unpatentable over Riseman in combination with Yasumoto as applied
`
`to claims 1-7, 10-18 and 21 above, and further in View of
`
`Stoller.
`
`Riseman in combination with Yasumoto teaches all the
`
`essential elements of claim 9, except for the step of fixing the
`
`second element to an etching support that is resistant to an
`
`attack by an etchant.
`
`Still, Stoller teaches that such a support 22, 24 enables
`
`wafer support during etching.
`
`see column 2,
`
`line 43 to column 3,
`
`§
`
`RAYOOOOOOSQ
`
`Raytheon2002-0003
`
`
`
`Serial NO. 006,120
`
`Art Unit
`
`1107
`
`line 10. Hence it would have been obvious to combine the applied
`
`prior art methods.
`
`Claim 19 is rejected under 35 U.S.C. S 103 as being
`
`unpatentable over Riseman in combination with Yasumoto as applied
`
`to claims 1-7, 10-18 and 21 above, and further in View of
`
`applicant's admitted prior art and admissions of non-criticality.
`
`Riseman in combination with Yasumoto does not explicitly
`
`teach the specific claimed substrate dimensions.
`
`Notwithstanding, applicant teaches that these dimensions are
`
`both conventional and non-critical, and that they are simply
`
`dictated by design constraints.
`
`See page 7,
`
`lines 1-19.
`
`Hence, such dimensions would have been obvious;
`
`Any inquiry concerning this communication or earlier
`communications from the examiner should be directed to David E.
`Grayhill whose telephone number is (703) 308-2947.
`
`Any inquiry of a general nature or relating to the status of
`this application should be directed to the Group receptionist
`whose telephone number is (703) 308-0661.
`
`P/
`
`DGraybil1:vr
`December 06, 1993
`
`%%34.-.
`
`(3:53 Ci1:1Jc,‘€'*1._:r;
`
`:F.
`-5
`
`RAY000000d0
`
`Raytheon2002-0004
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