Claim 3 of U.S. Patent No. 6,784,552, Nulty et al.
`(“the ʼ552 Patent”) is obvious under 35 U.S.C. § 103 over Heath in view of Havemann
`
`
`Prior Art Cited in this Chart:
`U.S. Patent No. 4,686,000, Heath (“Heath”)
`U.S. Patent No. 5,482,894, Havemann (“Havemann”)
`
`
`Claim Language
`Claim 3
`The semiconductor apparatus of
`claim 1 wherein said etch stop
`material comprises silicon
`dioxide.
`
`Heath in view of Havemann
`
`“The selective etch process is designed to remove material
`from the second dielectric layer faster than it removes
`material from the first dielectric layer. Silicon nitride and
`silicon dioxide (of different varieties) are used for the
`dielectric layers; relative etch selectivity for the best of such
`dielectric combinations is on the order of 10:1.”
`Havemann at column 1, lines 55-60.
`
`
`
`Petitioner Hynix - HYNIX-1010
`
`1
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