Independent Claim 27
`
`
`
`
`
`
`
`27. A method of etching a substrate in the manufacture of
`
`a device, the method comprising:
`
`heating a substrate holder to a first substrate holder
`temperature with a heat transfer device, the substrate
`holder having at least one temperature sensing unit,
`placing a substrate having a film thereon on the substrate
`holder in a chamber;
`etching a first portion of the film at a selected first
`substrate temperature; and
`etching a second portion of the film at a selected second
`substrate temperature, the selected second substrate
`temperature being different from the selected first
`substrate temperature;
` wherein substrate temperature is changed from the
`selected first substrate temperature to the selected
`second substrate temperature, using a measured
`substrate temperature, within a preselected time interval
`for processing, and at least the first substrate tempera-
`ture or the second substrate temperature, in single or in
`combination, is above room temperature.
`
`LAM Ex 1017-p. 1
`LAM v FLAMM
`IPR2015-01764
`
`
`
`
`
`
`
`
`
`27. A method of etching a substrate in the manufacture of
`
`a device, the method comprising:
`
`heating a substrate holder to a first substrate holder
`temperature with a heat transfer device, the substrate
`holder having at least one temperature sensing unit,
`placing a substrate having a film thereon on the substrate
`holder in a chamber;
`etching a first portion of the film at a selected first
`substrate temperature; and
`etching a second portion of the film at a selected second
`substrate temperature, the selected second substrate
`temperature being different from the selected first
`substrate temperature;
` wherein substrate temperature is changed from the
`selected first substrate temperature to the selected
`second substrate temperature, using a measured
`substrate temperature, within a preselected time interval
`for processing, and at least the first substrate tempera-
`ture or the second substrate temperature, in single or in
`combination, is above room temperature.
`
`LAM Ex 1017-p. 1
`LAM v FLAMM
`IPR2015-01764
`
`
`
`Independent Claim 37
`
`37. A method of processing a substrate during the manufacture
`
`of a device, the method comprising:
`
`placing a substrate having a film thereon on a substrate
`holder within a chamber of a plasma discharge
`apparatus, the plasma discharge apparatus comprising:
`a substrate temperature control system comprising
`a substrate temperature sensor and a substrate temperature
`control circuit operable to adjust the substrate
`temperature to a predetermined substrate temperature
`value with a first heat transfer process; and a substrate
`holder temperature control system comprising a substrate
`holder temperature sensor and a substrate
`holder temperature control circuit operable to adjust
`the substrate holder temperature to a predetermined
`substrate holder temperature value with a second heat
`transfer process;
`performing a first film treatment of a first portion of the
`film at a selected first substrate temperature;
`with the substrate temperature control circuit, changing
`from the selected first substrate temperature to a
`selected second substrate temperature, the selected
`second substrate temperature being different from the
`selected first substrate temperature; and
`performing a second film treatment of a second portion of
`the film at the selected second substrate temperature;
`wherein the substrate holder is heated above room tern-
`perature during at least one of the first or the second
`film treatments, and the substrate temperature control
`circuit is operable to change the substrate temperature
`from the selected first substrate temperature to the
`selected second substrate temperature within a preselected
`time period to process the film.
`
`
`
`
`
`
`
`LAM Ex 1017-p. 2
`LAM v FLAMM
`IPR2015-01764
`
`
`
`Independent Claim 51
`
`
`
`51. A method of processing a substrate in the manufacture
`
`of a device, the method comprising:
`
`placing a substrate having a film thereon on a substrate
`holder in a processing chamber; the processing chamber
`comprising the substrate holder, a substrate control
`circuit operable to adjust the substrate temperature, a
`substrate holder temperature sensor, and a substrate
`holder control circuit operable to maintain the substrate
`holder temperature;
`performing a first etching of a first portion of the film at
`a selected first substrate temperature;
`performing a second etching of a second portion of the
`film at a selected second substrate temperature, the
`second temperature being different from the first
`temperature;
` wherein at least one of the film portions is etched while
`heat is being transferred to the substrate holder with
`the substrate holder control circuit; and
`the substrate temperature control circuit effectuates the
`change from the first substrate temperature to the
`second substrate temperature within a preselected time
`period.
`
`
`
`
`
`LAM Ex 1017-p. 3
`LAM v FLAMM
`IPR2015-01764
`
`
`
`Independent Claim 56
`
`56. A method for processing layers which are included in
`
`a stack of layers positioned on a substrate, the method
`comprising:
`
`placing the substrate on a substrate holder;
`
`sensing a substrate holder temperature,
`
`etching at least a portion of a first silicon-containing
`layer in a chamber while the substrate is maintained at
`a selected first substrate temperature; and
`etching at least a portion of a second silicon-containing
`layer in the chamber while the substrate is maintained
`at a selected second substrate temperature;
` wherein the substrate holder is heated to a temperature
`operable to maintain at least one of the selected first
`and the selected second substrate temperatures above
`49° C., and the substrate temperature is changed from
`the first substrate temperature to the second substrate
`temperature with a control circuit operable to effectuate
`the changing within a preselected time period that
`is less than the overall process time associated with the
`etching the first silicon-containing layer and the second
`silicon-containing layer.
`
`LAM Ex 1017-p. 4
`LAM v FLAMM
`IPR2015-01764
`
`
`
`Independent Claim 60
`
`
`
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`60. A method for manufacturing a device comprising an
`
`integrated circuit, the method comprising:
`
`transferring a substrate comprising a stack of layers
`including a silicide layer into a chamber, the chamber
`comprising a substrate holder;
`sensing the substrate holder temperature;
`heating the substrate holder with a substrate holder
`control circuit and a heating device to maintain the
`substrate holder at a temperature that is operable to
`effectuate a substrate temperature above room
`temperature while processing the substrate;
`processing the substrate on the substrate holder at a first
`substrate temperature; and
`processing the substrate on the substrate holder at a
`second substrate temperature to etch at least a portion
`of the silicide layer;
` wherein the first substrate temperature is different from
`the second substrate temperature and the first substrate
`temperature is changed to the second substrate
`temperature with a substrate temperature control circuit
`within a preselected time to etch the silicide layer.
`
`
`
`
`
`LAM Ex 1017-p. 5
`LAM v FLAMM
`IPR2015-01764
`
`
`
`From Figure 10 Of The ’264 Patent
`
`LAM Ex 1017-p. 6
`LAM v FLAMM
`IPR2015-01764
`
`
`
`Figure 9 Of Matsumura
`
`LAM Ex 1017-p. 7
`LAM v FLAMM
`IPR2015-01764
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