`
`SMART EXHIBIT 1005
`
`
`
`United States Patent [191
`Qnreshi et al.
`
`US005793776A
`[11] Patent Number:
`[45] Date of Patent:
`
`5,793,776
`Aug. 11, 1998
`
`[54]
`
`STRUCTURE AND METHOD FOR SDRAM
`DYNAMIC SELF REFRESH ENTRY AND
`EX
`ING TA
`IT Us
`J G
`
`7/1996 Swoboda et a1. ................ .. 395/18321
`5,535,331
`8/1996 Bland et a1.
`.. 395/550
`5,546,568
`5,566,117 10/1996 Okamura et a1. .
`.... .. 365/222
`5,568,437 10/1996 Jamal .............. ..
`.. 365/201
`
`[75]
`
`Invantors: Amjad Qureshi‘ San Jose; sanghyeon
`Baeg cupertino both of Calif‘
`
`‘
`
`‘
`
`[73]
`
`Assignee: Samsung Electronics Co., Ltd.. Seoul.
`Rep. of Korea
`
`5,570,381 10/1996 Scho?eld . . . . . . . . . .
`5,608,736
`3/1997 Bradford et a1. .
`
`5,614,838
`
`3/1997 Jabcr et a1. . . . . . . .
`
`. . . . . . .. 371/61
`371/223
`
`. . . . .. 324/765
`
`, 3,503
`5 62
`
`7 R
`'
`4/199
`mkowskl
`OTHER PUBLICATIONS
`
`........................... .. 371/223
`
`'
`APPL N°" 733,817
`Filed:
`Oct. 18, 1996
`
`6
`
`Int. US. Cl. .................................... .. 371/221; 395/ 183.18 ................................................... ‘v
`
`
`Field of Search ................................ .. 371/221. 21.1.
`371/2231. 22.32. 22.5, 42; 365/201. 222.
`189-01. 233; 395/881. 285. 183.06. 183.18;
`324/765
`
`[56]
`
`_
`References Cited
`
`4,807,196
`4,860,290
`5,228,045
`5,313,470
`
`U'S' Pm DOCUMENTS
`2/1989 Mizukami ............................. .. 365/222
`8/1989 Daniels et a1. ..
`.... .. 371QS
`7/1993 Chiles ........... ..
`371/223
`5/1994 Simpson
`371/223
`1:32;: 2:’
`. 364/578
`7/1994 swoboda et aL
`5329:471-
`371/223
`6/1995 Rahman at a],
`5,423,523
`365/203
`7/1995 Fuller et a1.
`5,432,747
`. 364/579
`7/1995 Bock et a1.
`5,434,804
`- 365/222
`9/1995 Stephens, In Bl 21-
`5,450,364
`395/18306
`5,479,652 12/1995 Dreyeretal. ......... ..
`395/1831
`5'488’688
`“1996 601122,!“ et a1‘
`..... .. 371/223
`5,49f7,378
`3/1996 Amrm et a].
`324/1581
`5,510,704
`4/1996 Parker et al.
`.. 371/223
`5,519,715
`5/1996 Hao et a1.
`5,524,114
`6/1996 Peng ..................................... .. 371/221
`
`Texas Instruments. Boundary-Scan Architecture and IEEE
`Std. 1149.1 (from Chapter 3 ofTI’s IEEE 1149.1 Testability
`Primer. SSYAOOZB) (Nov. 1996).
`[BE Computer Society. “IEEE Standard Test Access Port
`
`thc mm of Elecuiw] and Electronics Engineers. Inc. (1990).
`
`including 1149.1a (Oct. 21. 1993) and 1149.1b (Mar. 1.
`1995).
`Maunder and Tulloss. “The Test Access Port and Bound
`M46116 Architecture”, Published by the IEEE Computer
`Society Press, Los Alamitos. California (1990).
`
`Primary Examiner-Robert W. Beausoliel, Jr.
`Assistant Examiner—Nadeem Iqbal
`Alwmey, Agent; or Firm-3111mm M°fri11~ Macl’hmom
`Franklin & F1161. LLP; David T. Millers
`
`ABSTRACT
`[571
`JTAG test logic and a memory controller place an SDRAM
`111 a SClf I'C?'CSl'l l'IlOdC P1101‘ [0 beginning
`tCStlllg. The
`memory controller can complete a current memory access
`and otherwise prepare for the JTAG test. During the JTAG
`test. self refresh mode operation of the SDRAM retains data
`without the need for a clock signal or refresh signals which
`are suspended for the JTAG test Accordingly after the
`JTAG test, circuit operation can continue without reinitial
`izin data in the SDRAM
`g
`'
`
`16 Claims, 6 Drawing Sheets
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`SMART EXHIBIT 1005 - PAGE - 1
`
`
`
`US. Patent
`
`Aug. 11, 1998
`
`Sheet 1 Of 6
`
`5,793,776
`
`I
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`FIG. 1
`
`116\ SDHAM
`
`SMART EXHIBIT 1005 - PAGE - 2
`
`
`
`US. Patent
`
`Aug. 11, 1998
`
`Sheet 2 of 6
`
`5,793,776
`
`no jtag_clk_stop_req
`
`201
`jtag_c|k_stop_req
`
`mcu_idle=0
`
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`CLK_STOP_
`REQ
`
`203
`
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`
`2'05
`
`211
`
`jtag_sdram_
`norm
`
`W An.
`TO
`REFRESH
`
`209
`
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`Stan
`
`FIG. 2
`
`ASSERT
`SELF
`REFRESH
`MODE
`
`207
`
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`
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`32
`
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`
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`
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`
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`
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`mem_add_set
`
`_ _ _ _
`
`“11
`
`reg_?le_test_en
`
`EXE
`
`mem_we1
`mem_we2
`mem_cex
`
`FIG. 7
`
`SCAN
`REQUIRED
`
`Data Path
`(EXE DP
`FALU, '
`MULT)
`
`SMART EXHIBIT 1005 - PAGE - 3
`
`
`
`US. Patent
`
`Aug. 11, 1998
`
`Sheet 3 of 6
`
`5,793,776
`
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`SMART EXHIBIT 1005 - PAGE - 4
`
`
`
`U.S. Patent
`
`Aug. 11, 1998
`
`Sheet 4 of 6
`
`5,793,776
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`SMART EXHIBIT 1005 - PAGE - 5
`
`SMART EXHIBIT 1005 - PAGE - 5
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`
`
`
`
`
`
`U.S. Patent
`
`Aug. 11, 1998
`
`Sheet 5 0f 6
`
`5,793,776
`
`ASSERTING SIGNAL jtag_cIk_stop_req
`HIGH TO MEMORY CONTROLLER UNIT
`FROM JTAG LOGIC
`
`/ s01
`
`ASSERTING SIGNAL mc_idle
`HIGH TO JTAG LOGIC FROM MEMORY
`CONTROLLER UNIT AFTER MEMORY
`CONTROLLER UNIT HAS FINISHED
`CURRENT MEMORY ACCESS
`
`ENTERING OF SDRAMs INTO
`SELF-REFRESH MODE BY MEMORY
`CONTROLLER UNIT IF SIGNALS
`jtag_cIk_stop_req HIGH AND mcu_idIe
`HIGH ARE BOTH ASSERTED
`
`ASSERTING SIGNAL sys_clk_bypass
`HIGH FROM JTAG LOGIC TO SYSTEM
`CLOCK GENERATOR BLOCK TO
`BYPASS SYSTEM CLOCK
`
`/510
`
`MAINTAINING SDRAMs IN SELF
`REFRESH MODE DURING JTAG
`TESTING
`
`/ 513
`
`ASSERTING SIGNAL jtag_sdram_norm
`HIGH TO MEMORY CONTROLLER UNIT
`FROM JTAG LOGIC AFTER JTAG
`TESTING IS COMPLETE
`
`EXITING OF SDRAMs OUT OF
`SELF-REFRESH MODE BY MEMORY
`CONTROLLER UNIT IF SIGNAL
`jtag_sdram_norm HIGH IS RECEIVED
`BY MEMORY CONTROLLER UNIT
`
`FIG. 5
`
`SMART EXHIBIT 1005 - PAGE - 6
`
`
`
`U.S. Patent
`
`Aug. 11, 1993
`
`Sheet 6 of 6
`
`5,793,776
`
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`SMART EXHIBIT 1005 - PAGE - 7
`
`SMART EXHIBIT 1005 - PAGE - 7
`
`
`
`1
`STRUCTURE AND METHOD FOR SDRAM
`DYNAMIC SELF REFRESH ENTRY AND
`EXIT USING JTAG
`
`CROSS-REFERENCE TO RELATED
`APPLICATIONS
`This application relates to copending applications Ser. No.
`081733.132. ?led on the same day. entitled “ADAPTABLE
`SCAN CHAINS FOR DEBUGGING AND MANUFAC
`TURING TEST PURPOSES". by Baeg. and Ser. No.
`09/733908. ?led on the same day. entitled “CLOCK GEN
`ERATION FOR TESTING OF INTEGRATED
`CIRCUITS“. by Baeg and Yu. both owned by the assignee
`of this application and incorporated herein by reference.
`
`COPYRIGHT NOTICE
`
`A portion of the disclosure of this patent document
`contains material which is subject to copyright protection.
`The copyright owner has no objection to facsimile repro
`duction by anyone of the patent document or the patent
`disclosure. as it appears in the Patent and Trademark O?ice
`patent ?le or records. but otherwise reserves all copyright
`rights whatsoever.
`
`20
`
`BACKGROUND OF INVENTION
`A recent development in integrated circuit testing is the
`use of the ITAG (Joint Test Action Group) test port for in situ
`testing of integrated circuit chips mounted on a board. This
`standard has been adopted by the Institute of Electrical and
`Electronics Engineers and is now de?ned as IEEE Standard
`1149.1. IEEE Standard Test Access Port and Boundary-Scan
`Architecture. which is incorporated herein by reference. The
`IEEE standard 1149.1 is explained in “The Test Access Port
`and Boundary-Scan Architecture" (IEEE Computer Society
`Press. 1990) which is also incorporated herein by reference.
`In the H‘AG scheme. a four (or optional ?ve) signal Test
`Access Port (TAP) is added to each chip or grouping of chips
`on a board The TAP includes four inputs: a test clock
`(TCK). a test mode select (TMS). a test data in (TDI). and
`an optional test reset (TRSTN). In addition. there is one
`output. a test data output (TDO). TDI and TDO are daisy
`chained from chip to chip. whereas TCK and TMS are
`broadcast.
`The TCK input is independent of the system clocks for the
`chip so that test operations can be synchronized between
`different chips. The operation of the test logic is controlled
`by the sequence of signals applied at the TMS input. The
`TDI and TDD are serial data input and output. respectively
`while TRSTN input is used to intitialize a chip or circuit to
`a known state. JTAG testing may be used to test suitably
`con?gured integrated circuits to verify operability. However.
`conventional JTAG testing may require initializing memory
`and control logic after each II‘AG test procedure since the
`storage cells of SDRAM need to be refreshed periodically
`(for example. every 64 ms) or the stored information is lost.
`This means all pre-existing memory data is lost and opera
`tion cannot be resumed at the point just prior to JTAG
`testing.
`
`25
`
`30
`
`45
`
`50
`
`55
`
`SUMMARY OF INVENTION
`
`In accordance with this invention. memory such as
`SDRAMs are put into self refresh mode while JTAG testing
`is performed. Self refresh is a refresh mode available in
`some memory and is preferred for data retention and low
`power operation. For an SDRAM in self refresh mode. the
`
`65
`
`5,793,776
`
`2
`SDRAM disables the system clock and all input buffers
`except CKE (clock enable).
`A JTAG Logic is used in accordance with this invention
`to asynchronously communicate with a Memory Controller
`Unit to allow the stopping of system clocks while preserving
`the contents of SDRAM using the self refresh mode. The
`Memory Controller Unit does not permit the system clocks
`to be stopped by the JTAG Logic for testing until the
`Memory Controller Unit has finished the current memory
`access operation. Prior to the stopping of the system clocks.
`the Memory Controller Unit places the SDRAM into self
`refresh mode to preserve the memory contents.
`In accordance with one embodiment of this invention. the
`JTAG Logic includes a JTAG Controller that is connected to
`a set of control registers that provide an interface to the
`Memory Controller Unit. The control registers are necessary
`for the communication of signals between the JTAG Con
`troller and the Memory Controller Unit because the two
`Controllers operate at different clock frequencies (for
`example. the JTAG Controller operates at 10 MHz and the
`Memory Controller Unit operates at 80 MHz).
`In one embodiment in accordance with this invention.
`when the JTAG Controller wants to stop the system clock to
`allow testing to commence. a signal jtag_clk__stop__req
`high is asserted and communicated via a Memory Control
`Register to a Self-Refresh State Machine which is part of the
`Memory Controller Unit. The Self-Refresh State Machine
`asserts the signal jtag_c1k__stop _,request high to a Memory
`Controller State Machine which ?nishes the current memory
`access operation before asserting a signal mcu_idle high
`back to the Self-Refresh State Machine. On assertion of the
`signal mcu_idle high by the Memory Controller State
`Machine and the presence of signal jtag_clk_stop__req
`high. the Self-Refresh State Machine places the SDRAM
`into self refresh mode. The Self-Refresh State Machine also
`asserts the signal mcu_idle high to an Observation Control
`Register which is continually scanned by the JTAG Con
`troller. If the JTAG Controller detects the signal mcu_idle
`high and the signal jtag__cllr_stopl3 req high. a signal sys.3
`clk_bypass high is asserted by the JTAG Controller. The
`signal sys_clk__bypass high is asserted to a System Clock
`Generator Block via the Memory Control Register and
`causes the system clock to be bypassed.
`Once the system clock has been bypassed. testing can
`begin and the contents of the SDRAM are preserved through
`the use of the SDRAM self refresh mode. When testing is
`complete. the JATAG controller asserts a signal jtag__
`sdram__norm high to the Self-Refresh State Machine via the
`Memory Control Register which causes the SDRAM to be
`taken out of self refresh mode. The JTAG Controller also
`removes the bypass of the system clock by asserting the
`signal sys__clk_bypass low via the Memory Control Reg
`ister.
`The ability to dynamically enter and exit SDRAM self
`refresh before and after tesu'ng. respectively. using the JTAG
`Logic saves debugging time. Memory and control logic do
`not need to be initialized after testing has taken place.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`FIG. 1 shows TI‘AG logic interfaced to a memory con
`troller unit in accordance with this invention.
`FIG. 2 shows a state diagram of a Self-Refresh State
`Machine in accordance with an embodiment of this inven
`tion.
`FIG. 3 shows a register cell in accordance with an
`embodiment of this invention.
`
`SMART EXHIBIT 1005 - PAGE - 8
`
`
`
`5,793,776
`
`3
`FIG. 4 shows a set of register cells con?gured as a register
`in accordance with an embodiment of this invention.
`FIG. 5 shows a method for SDRAM dynamic self refresh
`entry and exit using JTAG in accordance with this invention.
`FIGS. 6 and 7 illustrate test schemes according to the
`present invention.
`
`4
`?ip?op 310 while a signal update on lead 385 coupled to
`latch 325 remains high. Latch 325 retains the previously
`latched data on terminal Q of latch 325. An output signal tdo
`from ?ip?op 310 is input into an identical adjoining register
`cell 430 (see FIG. 4) as the signal tdi at a clock edge if the
`clock signal tck is enabled by AND gate 315 and signal enb.
`Clock signal tck and the signal enb input to AND gate 315
`which is coupled to the clock terminal of ?ip?op 310.
`To change output signal inst from register ,cell 300. signal
`update is asserted low which causes latch 32.5 to latch the
`output signal from ?ip?op 310 so that new value inst is now
`provided by register cell 300. Signal inst is the content of
`register cell 300 which is output to. for example. Self
`Refresh State Machine 112.
`FIG. 4 shows how register cell 300 (shown in detail in
`FIG. 3) is coupled together with other register cells in one
`embodiment of a register such as MCR 120 or OCR 125.
`Four register cells of a register are shown in FIG. 4. and the
`interconnect scheme can be repeated to produce a register of
`the desired size. The signals mode. tck. update. shift. enb.
`and setn are on leads 405. 410. 415. 420. 435. and 440.
`respectively. and couple to register cells 300. 430. 450. and
`470 in parallel.
`Data input signals dinp from JTAG Logic 140 couple to
`register cells 300. 430. 450. and 470 on separate input leads
`380. 445. 446. and 447. respectively. The data output signals
`dout from register cells 300. 430. 450. and 470 couple on
`separate leads 330. 461. 462. and 463. respectively. to JTAG
`logic 140.
`The signals inst from register cells 300. 430. 450. and 470
`on leads 389. 488. 489. and 490. respectively. are coupled to
`desired locations in JTAG Logic 140 or other parts of the
`circuitry. For example. in one embodiment. two register cells
`of MCR 120 provide the signals inst. jtag_clk_stop_req on
`lead 111 and jtag_sdram_norm. on lead 115 to Self-Refresh
`State Machine 112. Similarly. a register cell in OCR 125
`provides the signals inst and mcu_idle. to JTAG Controller
`110.
`Data serially shifted through register cells 300. 430. 450.
`and 470 is labeled as signal tdi when going into one of
`register cells 300. 430. 450. and 470 and labled as signal tdo
`when coming out of one of register cells 300. 430. 450. and
`470.
`When entering JTAG test mode. JTAG Logic 140 asserts
`a clock stop request signal (jtag_clk_stop_req on lead 111)
`high to Memory Control Unit 160 of FIG. 1. Signal jtag_
`clk__stop_req high on lead 111 passes to Self-Refresh State
`Machine 112 which the asserts signal jtag_clk_stop_req
`high on lead 111 coupled to Memory Controller State
`Machine 114. Self-Refresh State Machine 112 does not put
`SDRAMs 116 into self refresh mode until Memory Con
`troller State Machine 114 is in an IDLE state and Memory
`Controller State Machine 114 asserts a signal mc_idle high
`on lead 113. The state signal mcu__idle from Memory
`Controller State Machine 114 is input into shift register OCR
`125 and shifted out to be observed by JTAG Controller 110.
`Once Memory Controller State Machine 114 has ?nished the
`current memory access operation and signal jtag_clk_
`stop _req is asserted high. all remaining memory access
`requests are disregarded by Memory Controller State
`Machine 114.
`On assertion of the signal mcu__idle high with a pending
`clock- stop request. Self-Refresh State Machine 112 initiates
`a self refresh command to SDRAMs 116. Once a self refresh
`command has been asserted on SDRAMs 116. the signal
`mc_idle high is asserted by Self-Refresh State Machine 112
`
`DETAILED DESCRIPTION OF INVENTION
`Self re?'esh mode is implemented in some volatile memo
`ries such as SDRAMs. Putting such memories in self refresh
`mode allows the stopping of all clocks. including the
`SDRAM clock without loss of the stored information. An
`SDRAM. part NO. 10441651120A available from Sarnsung
`Electronics. Ltd. is an example of a memory having a self
`refresh mode. Using the SDRAM self refresh mode during
`II‘AG testing allows dynamic stopping of clocks. proceed
`ing with JTAG testing. and resuming operations with
`memory contents preserved
`In accordance with this invention as shown in FIG. 1.
`JTAG Logic 140 implemements extensions of the JTAG
`standard. Two special shift registers. a Mode Control Reg
`ister (MCR) 120 and an Observation Control Register
`(OCR) 125 are controlled by standard JTAG Controller 110.
`Shift registers MCR 120 and OCR 125 are used between a
`JTAG Controller 110 and the non-test circuitry because
`JTAG Controlla 110 operates at a lower clock speed than
`the non-test circuitry. For example. in one embodiment.
`JTAG Controller 110 runs at a 10 MHz clock while the
`non-test circuitry operates at 80 MHz. Synchronization
`problems between JTAG Controller 110 and the non-test
`circuitry are avoided through the use of the two shift
`registers. MCR 1276 and OCR 125.
`In one embodiment. Mode Control Register 120 holds 40
`instruction values while Observation Control Register 125
`holds 70 status values (Further details concerning one
`embodiment of JTAG Logic 140 are presented in Appendix
`A-B. incorporated by reference and available in the ?lejn
`particular Appendix B includes Verilog code for the test
`circuitry). Instructions are serially shifted into MCR 120
`from JTAG Controller 110 to control the internal logic of an
`integrated circuit. For example. in one embodiment the
`circuit is a multimedia signal processor system. JTAG
`Controller 110 serially shifts values out of OCR 125 to
`observe the status of the internal logic of the circuit. Shift
`registers MCR 120 and OCR 125 are special shift registers
`consisting of a plurality of register cells where data can be
`serially shifted through each register cell without destroying
`the existing contents of that register cell. The register cell
`used in an exemplary embodiment is a standard ASIC
`register cell described in Samsung ASIC Standard Cell
`Library Data Book SEC ST D60 which is incorporated
`herein by reference.
`FIG. 3 shows a schematic of a register cell 300 which can
`transmit an input signal dinp with or without storing the
`value of signal dinp in ?ip?op 310. In register cell 300. input
`signal dinp is input through multiplexer 305 to ?ip?op 310
`through an invertor 320 and multiplexer 330 as an output
`signal dout.
`Multiplexer 305 selects either a signal tdi on or signal
`dinp depending on whether a signal shift is high or low
`respectively. The use of ?ip?op 310 and latch 325 allows
`data to be shifted into ?ip?op 310 while latch 35 preserves
`an output signal inst. Multiplexer 330 selects whether output
`signal dout is from latch 325 or input signal dinp.
`If the signal tdi is selected by multiplexer 305. data (tdi)
`may be shifted through register cell 300 by shifting data into
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`on lead 113 to OCR 125. A few clock cycles after assertion
`of the signal mc_idle high on lead 113. System Clock
`Generator Block 150 to the logic and SDRAMs 116 will be
`bypassed for JTAG testing. To bypass system clock 105. the
`signal sys_clk__bypass high is shifted into a particular
`register cell of MCR 120. Lead 119 is coupled to synchro
`nous multiplexer 118 and the assertion of signal sys_clk_
`bypass high on lead 119 disables output from system clock
`105. Before switching to input “1” on assertion of the signal
`sys_clk_bypass high on lead 119 synchronous multiplexer
`118 waits for a rising clock edge to ensure maintenance of
`proper synchronization.
`During testing. SDRAMs 116 are maintained in self
`refresh mode to retain stored data. Once JTAG testing is
`complete. JTAG Controller 110 asserts the signal jtag_
`sdram_nonn high on lead 115 which causes Self-Refresh
`State Machine 112 to take SDRAMs 116 out of self refresh
`mode and deasserts signal sys_clk_bypass. Once SDRAMs
`116 are out of self refresh mode. and all the system clocks
`are active. Memory Controller State Machine 114 resumes
`processing memory access requests that were pending prior
`to the start of JTAG testing.
`FIG. 2 shows a state diagram for an embodiment of
`Self-Refresh State Machine 112. Initially. Self-Refresh State
`Machine 112 is in state IDLE 201 if the signal jtag_cllr_
`stop Jeq high is not asserted. If the signal jtag_clk_stop_
`req high is asserted. Self-Refresh State Machine 112 enters
`state JTAG_CLK_STOP_REQ 203. asserts signal jtag_
`clk_stop__req to Memory Controller State Machine 114.
`and waits until signal mcu_idle high is asserted, indicating
`that Memory Controller State Machine 114 has completed
`the current memory access. When the signal mcu__id1e is
`asserted, Self-Refresh State Machine 112 enters state
`MCU_IDLE 205 which asserts the signal mcu_idle high on
`lead 113 to OCR 125. JTAG Controller 110 constantly shifts
`the contents of OCR 125 to determine the state of the
`internal logic and initiates testing once the signal mcu_idle
`high on lead 113 has been shifted in from OCR I25.
`Self-Refresh State Machine 112 enters state ASSERT
`SELF REFRESH MODE 2M and in an exemplary embodi
`ment where SDRAMs 116 are 16M SDRAMs available
`from Samsung (part nos. KM44S4020A. KM48S2020A. or
`KM416S1120A. see Samsung Data Book “16M Synchro
`nous DRAM”. March 1996 which is incorporated herein by
`reference). Self-Refresh State Machine 112 asserts low on
`45
`pins CS (chip select). RAS (row address strobe). CAS
`(column address strobe) and CKE (clock enable) with high
`on WE (write enable) to put SDRAM 116 into self refresh.
`Once the self refresh mode is entered. SDRAM 116 ignores
`all inputs other than a CKE (clock enable) pin while in self
`refresh state.
`Self-Refresh State Machine 112 is in state WAIT TO
`REFRESH 209 until the signal jtag_sdram_norm from
`MCR 120 is high. On receipt of the signal jtag_sdram_
`norm high on lead 115. Self-Refresh State Machine 112 exits
`self refresh mode and enters state WAIT NORM 211. In the
`exemplary embodiment. exit from self refresh mode is
`accomplished by removing the bypass of system clock 105
`by asserting the signal sys_cloclLbypass low on lead 119
`coupled to synchronous multiplexer 118 and then asserting
`high on the CKE inputs of SDRAMs 116. In state WAII‘
`NORM 211. a NOP (no operation signal) is asserted for a
`minimum of 100 us on SDRAMs 116 to allow SDRAMs 116
`to reach idle state. After assertion of signal NOP for 100 ns.
`Self-Refresh State Machine 112 returns to state IDLE 201.
`FIG. 5 shows a method for SDRAM dynamic self refresh
`entry and exit using JTAG in accordance with this invention.
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`Each block represents a step in the method. Block 501 is the
`step of asserting signal jtag_clk_stop__req high by JTAG
`Logic 140 to Memory Controller Unit 160. Block 504 is the
`step of asserting signal mc_idle high by Memory Controller
`Unit 160 to JTAG Logic 140 once Memory Controller Unit
`160 has completed the current memory access operation.
`Block507 is the step of Memory Controller Unit 160 placing
`SDRAMs 116 into self refresh mode if the signals jtag_
`clk_stop_req and mcu_idle are both asserted. Block 510 is
`the step of asserting a signal sys_clk_bypass high from
`JTAG Logic 140 to system clock generator 150 to bypass
`system clock 105. Block 513 is the step of maintaining
`SDRAMs 116 in self refresh mode during JTAG testing.
`Block 516 is the step of asserting a signal jtag__sdram__
`norm high to Memory Controller Unit 160 from JTAG Logic
`140 after JTAG testing has been completed. Block 519 is the
`step of Memory Controller Unit 160 taking SDRAMs 116
`out of self refresh mode if signal jtag__sdram_norm high is
`received by Memory Controller Unit 160.
`Restarting logic and SDRAMS 116 at the point of shut
`down allows dynamic stopping of all clocks. proceeding
`with JTAG testing. and resuming operation. Hence. memory
`and control logic need not be initialized each time JTAG
`testing is performed and less memory initializations are
`required saving time during the debugging procedure.
`The various embodiments of the structure and method of
`this invention that are described above are illustrative only
`of the principles of this invention and are not intended to
`limit the scope of the invention to the particular embodi
`ments described. Many additional and alternative embodi
`ments are in the scope of this invention as de?ned by the
`following claims.
`We claim:
`1. A circuit test method comprising:
`asserting a ?rst signal to a memory controller unit from a
`test logic circuit to indicate a start of the circuit test;
`asserting a second signal from said memory controller
`unit to said test logic circuit to indicate that said
`memory controller unit has ?nished the current
`memory access;
`placing of a dynamic memory coupled to said memory
`controller unit into a self refresh mode in response to
`both said ?rst signal and said second signal being
`asserted; and
`testing a circuit while said dynamic memory is in said self
`refresh mode. said self-refresh mode being used to
`preserve pretest contents of said dynamic memory
`during said testing.
`2. The method of claim 1. wherein testing disables a clock
`signal used by said dynamic memory when in an operating
`mode.
`3. The method of claim 1 wherein testing stops a refresh
`signal to said dynamic memory.
`4. The method of claim 1. further comprising asserting a
`third signal from said test logic circuit to a system clock
`generator block. said third signal causing a bypass of said
`system clock generator block.
`5. The method of claim 4. further comprising:
`asserting a fourth signal to said memory controller unit
`from said test logic circuit to indicate that said circuit
`test is complete; and
`taking of said dynamic memory out of self refresh mode
`by said memory controller unit if said fourth signal is
`asserted.
`6. A circuit comprising:
`a memory controller;
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`a test logic coupled to said memory controller wherein
`prior to a circuit test. said test logic asserts a ?rst signal
`that indicates to said memory controller that a system
`clock bypass is being requested and said memory
`controller asserts a second signal to said test logic when
`a current memory access operation is complete; and
`a dynamic memory capable of operating in self refresh
`mode coupled to said memory controller. wherein said
`memory controller places said dynamic memory into
`said self refresh mode in response to said ?rst signal
`and said second signal being asserted. said self refresh
`mode being used to preserve pretest contents of said
`dynamic memory during said circuit test.
`7. The circuit of claim 6. further comprising a system
`clock generator block coupled to said test logic circuit.
`wherein said test logic circuit asserts a third signal prior to
`said circuit test to bypass said system clock generator block.
`8. The circuit of claim 6, wherein said dynamic memory
`is an SDRAM.
`9. The circuit of claim 6. wherein said test logic com
`prises:
`a test controller; and
`a set of shift registers coupled to both said memory
`controller and said test controller to allow for commu
`nication between said test controller and said memory
`controller.
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`10. The circuit of claim 9. wherein said test controller is
`a JTAG Controller.
`11. The circuit of claim 9. wherein said set of shift
`registers comprise:
`a Mode Control Register for holding instruction values;
`and
`an Observation Control Register for holding status values.
`12. The circuit of claim 11. wherein said Mode Control
`Register comprises a plurality of register cells through
`which data can be serially shifted without destroying the
`existing contents of each of said plurality of register cells.
`13. The circuit of claim 11. wherein said Observation
`Control Register comprises a plurality of register cells
`through which data can be serially shifted without destroy
`ing the existing contents of each of said plurality of register
`cells.
`14. The circuit of claim 6 wherein said circuit comprises
`an integrated circuit.
`15. The circuit of claim 14 wherein said integrated circuit
`is a multimedia signal processor system.
`16. The method of claim 1 wherein said circuit is a logic
`circuit.
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`SMART EXHIBIT 1005 - PAGE - 11