Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 8,969,841 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Claim
`1.
`
`Claim Element
`A laser driven light source
`comprising:
`
`Comments
`Representative infringing products from Petitioners include ASML’s
`YieldStar system and other products that incorporate subsystems
`containing a laser-driven light source or Qioptiq’s laser-driven light source
`(“Qioptiq LS1”). On information and belief, ASML’s YieldStar S-250D
`and YieldStar T-250D (“YieldStar 250”) include a laser-driven light
`source.
`
`
`YieldStar S-250D
`
`
`
`
`The YieldStar 250 is a tool used in the semiconductor wafer manufacturing
`process. On information and belief, YieldStar 250 systems incorporate
`Qioptiq laser-driven light sources to enable “very precise on-product
`overlay and focus measurements per field needed to calculate accurate
`corrections to be applied on the scanners.” (See YieldStar T-250D Product
`Brochure (Jan. 20, 2014) (Ex. 2052); YieldStar S-250D Product Brochure
`(Jan. 20, 2014) (Ex. 2053).)
`
`
`
`
`1
`
`Energetiq Ex. 2034, page 1 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Claim
`
`Claim Element
`
`Infringement Claim Chart U.S. Patent No. 8,969,841 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`On information and belief, RnD-ISAN developed a laser-driven light
`source for Qioptiq that was eventually incorporated into a subsystem for
`use in the ASML YieldStar system. (RnD-ISAN LLC, “Laser Pumped
`Plasma Broadband Light Source” at 6 (“RnD-ISAN”) (Ex. 2039); Images,
`ASML's Customer Magazine, 2014 at 18 (Ex. 2005) (“[T]he xenon arc
`lamp used in the YieldStar 200C has been replaced with a new source that
`delivers substantially more light and improved illumination
`characteristics.”).)
`
`
`
`(RnD-ISAN at 6 (Ex. 2039) (incorporation of light source into subsystem
`and YieldStar system).)
`
`The Qioptiq LS1 is a laser-driven light source. (RnD-ISAN at Title Page
`(Ex. 2039) (“Laser Pumped Plasma Broadband Light Source”).)
`
`
`
`
`2
`
`Energetiq Ex. 2034, page 2 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 8,969,841 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`
`Claim
`
`Claim Element
`
`a sealed pressurized
`chamber having a gas at a
`pressure greater than 10
`atmospheres during
`operation;
`an ignition source for
`ionizing the gas within the
`chamber; and
`an at least substantially
`continuous laser for
`providing energy within a
`wavelength range from
`about 700 nm to 2000 nm
`to the ionized gas to
`sustain a plasma within the
`chamber to produce a
`
`
`(RnD-ISAN at 2 (Ex. 2039) (“Schematic of a laser pumped plasma
`broadband light source”).)
`The Qioptiq LS1 includes a sealed chamber containing gas that is
`pressurized to greater than 10 atmospheres during operation. (RnD-ISAN
`at 2 (Ex. 2039), element #6 (“Xe high pressure lamp”); 1 (“Working
`medium is Xenon at high (~20 atm) pressure.”).)
`
`The Qioptiq LS1 includes an RF ignition source for ionizing the gas within
`the chamber. (RnD-ISAN at 2 (Ex. 2039), element #5 (“RF ignition
`unit”).)
`The Qioptiq LS1 includes a continuous wave laser that provides at least
`substantially continuous energy at 980 nm, within the range of 700-2000
`nm, to sustain a plasma within the chamber. (RnD-ISAN at 2 (Ex. 2039),
`element #3 (“Diode laser with optical fiber output (980nm)”); 1
`(“Continuous wave laser beam is focused onto initial gas breakdown
`volume sufficient to maintain plasma state.”).)
`
`The sustained plasma produces plasma-generated light having wavelengths
`
`
`
`3
`
`Energetiq Ex. 2034, page 3 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 8,969,841 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`greater than 50 nm. (RnD-ISAN at 3 (Ex. 2039) (“Laser pumped plasma
`broadband light source XWS emits light in 200-800nm range with high
`spectral brightness.”).)
`The chamber of the Qioptiq LS1 includes a region of material that is
`transparent to a portion of the plasma-generated light and allows the
`plasma-generated light to exit the chamber. (RnD-ISAN at 2 (Ex. 2039),
`element #6 (“Xe high-pressure lamp,” depicting light emitted from the
`lamp); 4 (depicting light emitted from the lamp).)
`
`As discussed in detail above, representative infringing products from
`Petitioners meet all of the limitations of claim 1.
`The Qioptiq LS1 includes a laser light filter optical element that modifies a
`property of the laser energy provided to the ionized gas. The Qioptiq LS1
`also includes focusing optics that modify a property of the laser energy
`provided to the ionized gas. (RnD-ISAN at 2 (Ex. 2039), element #7
`(“Laser light filter”); element #4 (“Focusing optics” also depicted in path
`of laser).)
`As discussed in detail above, representative infringing products from
`Petitioners meet all of the limitations of claim 2.
`The Qioptiq LS1 includes focusing optics that focus the laser energy into a
`region of the ionized gas. (RnD-ISAN at 2 (Ex. 2039), element #4
`(“Focusing optics,” also depicted in path of laser); 1 (“Continuous wave
`
`4
`
`Claim Element
`plasma-generated light
`having wavelengths greater
`than 50 nm,
`the chamber further
`comprising a region of
`material that is transparent
`to at least a portion of the
`plasma-generated light and
`that allows said portion of
`the plasma-generated light
`to exit the chamber.
`The laser driven light source
`of claim 1, comprising
`at least one optical element
`for modifying a property of
`the laser energy provided
`to the ionized gas.
`
`The laser driven light source
`of claim 2 wherein
`the optical element is a
`lens or mirror focusing the
`laser energy into a region
`
`Claim
`
`2.
`
`3.
`
`
`
`Energetiq Ex. 2034, page 4 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 8,969,841 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Claim
`
`Claim Element
`of the ionized gas.
`
`Comments
`laser beam is focused onto initial gas breakdown volume sufficient to
`maintain plasma state.”).)
`As discussed in detail above, representative infringing products from
`Petitioners meet all of the limitations of claim 1.
`The Qioptiq LS1 includes an RF ignition source for ionizing the gas within
`the chamber. (RnD-ISAN at 2 (Ex. 2039), element #5 (“RF ignition
`unit”).)
`
`5
`
`7.
`
`The laser driven light source
`of claim 1 wherein
`the ignition source is
`selected from the group
`consisting of electrodes, an
`ultraviolet ignition source,
`a capacitive ignition
`source, an inductive
`ignition source, a flash
`lamp, a pulsed laser, and a
`pulsed lamp.
`
`
`
`
`
`
`
`Energetiq Ex. 2034, page 5 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Claim
`1.
`
`Claim Element
`A method for illuminating
`features of a semiconductor
`wafer, comprising:
`
`Comments
`Representative infringing products from Petitioners include ASML’s
`YieldStar system and other products that incorporate subsystems
`containing a laser-driven light source or Qioptiq’s laser-driven light source
`(“Qioptiq LS1”). On information and belief, ASML’s YieldStar S-250D
`and YieldStar T-250D (“YieldStar 250”) include a laser-driven light
`source.
`
`
`YieldStar S-250D
`
`
`
`
`The YieldStar 250 is a tool used in the semiconductor wafer manufacturing
`process. On information and belief, YieldStar 250 systems incorporate
`Qioptiq laser-driven light sources to enable “very precise on-product
`overlay and focus measurements per field needed to calculate accurate
`corrections to be applied on the scanners.” (See YieldStar T-250D Product
`Brochure (Jan. 20, 2014) (Ex. 2052); YieldStar S-250D Product Brochure
`(Jan. 20, 2014) (Ex. 2053).)
`
`
`
`
`6
`
`Energetiq Ex. 2034, page 6 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Claim
`
`Claim Element
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`On information and belief, RnD-ISAN developed a laser-driven light
`source for Qioptiq that was eventually incorporated into a subsystem for
`use in the ASML YieldStar system. (RnD-ISAN LLC, “Laser Pumped
`Plasma Broadband Light Source” at 6 (“RnD-ISAN”) (Ex. 2039); Images,
`ASML's Customer Magazine, 2014 at 18 (Ex. 2005) (“[T]he xenon arc
`lamp used in the YieldStar 200C has been replaced with a new source that
`delivers substantially more light and improved illumination
`characteristics.”).)
`
`
`
`(RnD-ISAN at 6 (Ex. 2039) (incorporation of light source into subsystem
`and YieldStar system).)
`
`Operation of the Qioptiq LS1 produces light and illuminates features of a
`semiconductor wafer. (RnD-ISAN at Title Page (Ex. 2039) (“Laser
`Pumped Plasma Broadband Light Source”).)
`
`
`
`
`7
`
`Energetiq Ex. 2034, page 7 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`
`Claim
`
`Claim Element
`
`ionizing a gas within a
`sealed pressurized plasma
`chamber having an
`operating pressure of at
`least 10 atmospheres;
`providing substantially
`continuous laser energy
`having a wavelength range
`of up to about 2000 nm
`through a region of
`material of the sealed
`pressurized chamber that is
`transparent to the
`substantially continuous
`laser energy to the ionized
`gas to sustain a plasma
`
`
`(RnD-ISAN at 2 (Ex. 2039) (“Schematic of a laser pumped plasma
`broadband light source”).)
`The Qioptiq LS1 includes a sealed pressurized plasma chamber having a
`pressure of over 10 atmospheres. (RnD-ISAN at 2 (Ex. 2039), element #6
`(“Xe high pressure lamp”); 1 (“Working medium is Xenon at high (~20
`atm) pressure.”).)
`
`The Qioptiq LS1 includes a laser for providing substantially continuous
`laser energy at a wavelength of 980 nm, i.e., under 2000 nm, through a
`region of the sealed pressurized chamber that is transparent to the laser
`energy. (RnD-ISAN at 2 (Ex. 2039), element #3 (“Diode laser with optical
`fiber output (980nm)”); 1 (“Continuous wave laser beam is focused onto
`initial gas breakdown volume sufficient to maintain plasma state.”).)
`
`The plasma of the Qioptiq LS1 produces plasma-generated light having
`wavelengths greater than 50 nm. (RnD-ISAN at 3 (Ex. 2039) (“Laser
`pumped plasma broadband light source XWS emits light in 200-800nm
`range with high spectral brightness.”).)
`
`
`
`8
`
`Energetiq Ex. 2034, page 8 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`
`Claim
`
`Claim Element
`within the sealed
`pressurized plasma
`chamber to produce
`plasma-generated light
`having wavelengths greater
`than 50 nm; and
`
`illuminating the wafer with
`plasma-generated light
`having wavelengths greater
`than 50 nm that exits the
`sealed pressurized
`chamber.
`
`15. A method for producing light
`comprising:
`
`The plasma-generated light having wavelengths greater than 50 nm of the
`Qioptiq LS1 exits the sealed pressurized chamber and illuminates a wafer.
`(Images, ASML's Customer Magazine, 2014 at 18 (Ex. 2005) (“YieldStar
`benefits to the next level by dramatically increasing the amount of light
`reaching the wafer.”); see also (RnD-ISAN at 2 (Ex. 2039) (“Xe high-
`pressure lamp,” depicting light emitted from the lamp); 4 (depicting light
`emitted from the lamp); 5 (“Broadband light sources with high spectral
`brightness can be readily used in applications requiring uniform
`illumination of objects . . . .”); 6 (listing ASML as a customer).)
`Representative infringing products from Petitioners include ASML’s
`YieldStar system and other products that incorporate subsystems
`containing a laser-driven light source or Qioptiq’s laser-driven light source
`(“Qioptiq LS1”). On information and belief, ASML’s YieldStar S-250D
`
`
`
`9
`
`Energetiq Ex. 2034, page 9 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Claim
`
`Claim Element
`
`Comments
`and YieldStar T-250D (“YieldStar 250”) include a laser-driven light
`source.
`
`
`YieldStar S-250D
`
`
`
`
`The YieldStar 250 is a tool used in the semiconductor wafer manufacturing
`process. On information and belief, YieldStar 250 systems incorporate
`Qioptiq laser-driven light sources to enable “very precise on-product
`overlay and focus measurements per field needed to calculate accurate
`corrections to be applied on the scanners.” (See YieldStar T-250D Product
`Brochure (Jan. 20, 2014) (Ex. 2052); YieldStar S-250D Product Brochure
`(Jan. 20, 2014) (Ex. 2053).)
`
`On information and belief, RnD-ISAN developed a laser-driven light
`source for Qioptiq that was eventually incorporated into a subsystem for
`use in the ASML YieldStar system. (RnD-ISAN LLC, “Laser Pumped
`Plasma Broadband Light Source” at 6 (“RnD-ISAN”) (Ex. 2039); Images,
`
`
`
`10
`
`Energetiq Ex. 2034, page 10 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Claim
`
`Claim Element
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`ASML's Customer Magazine, 2014 at 18 (Ex. 2005) (“[T]he xenon arc
`lamp used in the YieldStar 200C has been replaced with a new source that
`delivers substantially more light and improved illumination
`characteristics.”).)
`
`
`
`(RnD-ISAN at 6 (Ex. 2039) (incorporation of light source into subsystem
`and YieldStar system).)
`
`Operation of the Qioptiq LS1 produces light. (RnD-ISAN at Title Page
`(Ex. 2039) (“Laser Pumped Plasma Broadband Light Source”).)
`
`
`ionizing with an ignition
`
`
`(RnD-ISAN at 2 (Ex. 2039) (“Schematic of a laser pumped plasma
`broadband light source”).)
`The Qioptiq LS1 uses an ignition source to ionize a gas within a plasma
`
`
`
`11
`
`Energetiq Ex. 2034, page 11 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`chamber that is pressurized to greater than 10 atmospheres during
`operation. (RnD-ISAN at 2 (Ex. 2039), element #5 (“RF ignition unit”);
`element #6 (“Xe high pressure lamp”); p. 1 (“Working medium is Xenon at
`high (~20 atm) pressure.”).)
`
`Laser energy at a wavelength of 980 nm, under 2000 nm, and energy from
`the ignition source are provided to the ionized gas within the pressurized
`plasma chamber to produce and sustain a plasma in the chamber. (RnD-
`ISAN at 2 (Ex. 2039), element #3 (“Diode laser with optical fiber output
`(980nm)”); at 1 (“Continuous wave laser beam is focused onto initial gas
`breakdown volume sufficient to maintain plasma state.”).)
`
`The plasma of the Qioptiq LS1 produces a plasma-generated light having
`wavelengths greater than 50 nm that is directed out of the plasma chamber
`through a transparent region of the pressurized plasma chamber. (RnD-
`ISAN at 3 (Ex. 2039) (“Laser pumped plasma broadband light source
`XWS emits light in 200-800nm range with high spectral brightness.”); 2
`element #6 (“Xe high-pressure lamp,” depicting light emitted from the
`lamp); 4 (depicting light emitted from the lamp).)
`
`Claim
`
`Claim Element
`source a gas within a
`pressurized plasma
`chamber, the pressure of
`the plasma chamber during
`operation is greater than 10
`atmospheres;
`providing (i) laser energy
`having a wavelength range
`up to about 2000 nm and
`(ii) energy from the
`ignition source to the
`ionized gas within the
`pressurized plasma
`chamber
`to generate or sustain a
`plasma in the chamber to
`produce a plasma-
`generated light having
`wavelengths greater than
`50 nm; and directing the
`plasma-generated light out
`of the pressurized plasma
`chamber through a
`transparent region of the
`
`
`
`12
`
`Energetiq Ex. 2034, page 12 - IPR2015-01375
`
`

`
`
`Exhibit 2034: Infringement Claim Charts for U.S. Patent Nos. 8,969,841 and 9,048,000
`
`
`
`Infringement Claim Chart U.S. Patent No. 9,048,000 – ASML YieldStar-Qioptiq Laser-Driven Light Source
`
`
`Comments
`
`As discussed in detail above, representative infringing products from
`Petitioners meet all of the limitations of claim 1.
`The plasma chamber of the Qioptiq LS1 used, on information and belief, in
`the ASML YieldStar system, is pressurized to greater than 10 atmospheres
`during operation. (RnD-ISAN at 2 (Ex. 2039), element #6 (“Xe high
`pressure lamp”); p. 1 (“Working medium is Xenon at high (~20 atm)
`pressure.”).)
`
`13
`
`Claim
`
`Claim Element
`pressurized plasma
`chamber.
`18. The method of claim 1
`wherein
`the pressure of the plasma
`chamber during operation
`is greater than 10
`atmospheres.
`
`
`
`
`
`Energetiq Ex. 2034, page 13 - IPR2015-01375