`
`
`
`DESCRIPTION
`
`1/20/2014
`
`The YieldStar S-250D is a standalone metrology tool which allows measurement of on-product overlay and focus using
`diffraction based overlay (DBO) and diffraction based focus (DBF) techniques as well as the optional capability to measure
`ADI CD.
`
`KEY FEATURES AND BENEFITS
`
`The YieldStar S-250D enables and supports the following applications:
`
`BaseLiner MMO
`On-product overlay measurements for monitoring and APC (in conjunction with Overlay Optimizer), using 10x10 um
`and 16 x16 um targets in-die (uDBO) or 30x60 um targets in scribelane (STOV)
`On-product focus measurements for monitoring and APC (in conjunction with Imaging Optimizer)
`On-product CD ADI measurement is an option for inline measurement of CD
`
`
`Increased Sampling
`YieldStar S-250D provides increased sampling compared to the S-200C, being 30% faster per uDBO measurement.
`
`Process Robustness
`Diffraction based techniques are, by design, more robust against process variations and marker damage on product wafers,
`especially at the edge of the wafer. This gives very precise on-product overlay and focus measurements per field needed to
`calculate more accurate corrections to be applied on the scanners.
`
`The S-250D has 30% better TMU compared to the S-200C which supports more precise measurements resulting in better
`corrections and better on-product overlay and focus performance of the scanner, supporting 2014-15 customer roadmaps.
`
`Order Codes
`
`9428.999.46120
`
`This page was extracted from ASML’s Product Catalog in
`which complete trademark and copyright information can be
`found. North America +1 480 383 4422 Europe +31 40 268
`3000 Asia +852 2295 1168
`
`Page 1 of 2
`ASML Product Catalog. All rights reserved
`
`Energetiq Ex. 2053, page 1 - IPR2015-01362
`
`
`
`Device Matching
`The correlation of DBO measurements to real device overlay is better than that of IBO measurements which is of particular
`value at tighter on-product overlay requirements.
`
`TECHNICAL SPECIFICATIONS
`
`Overlay (uDBO, 10x10 um2 targets)
`TMU
`MAM
`
`
`Focus (DBF)
`Dynamic precision
`MAM time
`
`
`Productivity
`Throughput (4 wafers, 1000 uDBO points)
`Wafer overhead
`
`≤ 0.35 nm
`≤ 0.35 sec
`
`≤ 5 nm
`≤ 0.5 sec
`
`> 220 wph scanner equivalent
`≤ 15 sec
`
`Page 2 of 2
`ASML Product Catalog. All rights reserved
`
`Energetiq Ex. 2053, page 2 - IPR2015-01362
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