PUBLIC VERSION (NON-CONFIDENTIAL)
`
`PROTECTIVE ORDER MATERIAL
`
`THIS DOCUMENT CONTAINS TECHNICAL DATA CONTROLLED UNDER THE
`INTERNATIONAL TRAFFIC IN ARMS REGULATIONS (ITAR) AND MAY NOT BE
`EXPORTED, REEXPORTED, TEMPORARILY IMPORTED, TRANSFERRED, OR
`RETRANSFERRED TO ANY NON-U.S. PERSON, COUNTRY OR ENTITY, BY ANY
`MEANS, WITHOUT THE APPROPRIATE APPROVAL OF THE U.S. DEPARTMENT
`OF STATE, DIRECTORATE OF DEFENSE TRADE CONTROLS (DDTC)
`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`_______________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`_______________
`
`
`
`
`
`SONY CORPORATION,
`Petitioner
`
`v.
`
`RAYTHEON COMPANY,
`Patent Owner
`_______________
`
`Case IPR2015-01201
`
`Patent 5,591,678
`_______________
`
`
`
`
`
`PATENT OWNER’S RESPONSE
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`TABLE OF CONTENTS
`
`I.
`
`11.
`
`INTRODUCTION ...................................................................................... .. 1
`
`SUMMARY OF ARGUMENTS ................................................................ ..1
`
`A.
`
`B.
`
`The Challenged Claims Are Patentable Over Bertin ......................... ..2
`
`The Challenged Claims are Patentable over Morimoto ..................... ..3
`
`III.
`
`THE ’678 PATENT .................................................................................... ..3
`
`A.
`
`Background Regarding ’678 Patent and Technology ........................ ..3
`
`
`
`C.
`
`Level of Ordinary Skill in the Art ................................................... .. 19
`
`IV.
`
`THE ’678 PATENT IS PATENTABLE .................................................... ..2O
`
`A.
`
`Legal Standards .............................................................................. ..20
`
`l.
`
`2.
`
`3.
`
`Anticipation .......................................................................... ..20
`
`Obviousness .......................................................................... ..21
`
`Invention Prior to a §l02(e) Reference ................................. ..22
`
`B.
`
`The Challenged Claims Are Patentable over Bertin ........................ ..24
`
`
`
`C.
`
`The Challenged Claims are Patentable over Morimoto ................... ..3l
`
`1.
`
`2.
`
`Morimoto Fails to Disclose or Suggest Etching .................... ..33
`
`CMP and Etching are Not Interchangeable ........................... ..36
`
`a.
`
`b.
`
`c.
`
`d.
`
`CMP and Etching Have Different Selectivity .............. ..38
`
`CMP and Etching Result in Different
`Roughness of Substrates ............................................. ..39
`
`CMP and Etching Result in Different
`Degrees of Contamination ........................................... ..4O
`
`CMP and Etching Speeds Are Different ...................... ..40
`
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`e.
`
`CMP and Etching Involve Different
`Uniformity of Removal Across the Wafer ................... ..41
`
`3.
`
`4.
`
`Morimoto Does Not Disclose an Etch—Stop Layer ................ ..42
`
`Ground 4: A PHOSITA Would Not Combine
`
`Morimoto with the “CMP/Etching” References .................... ..46
`
`a.
`
`b.
`
`c.
`
`d.
`
`e.
`
`f.
`
`g.
`
`Hamaguchi .................................................................. ..47
`
`Yu ............................................................................... ..5O
`
`Cote ............................................................................ ..5 l
`
`Poon ............................................................................ ..52
`
`Sandhu ........................................................................ ..53
`
`Kusunoki .................................................................... ..55
`
`Miura .......................................................................... ..56
`
`5.
`
`Claim Analysis ..................................................................... ..57
`
`a.
`
`b.
`
`c.
`
`d.
`
`Claim 1 ....................................................................... ..57
`
`Dependent Claims 2, 4-5, and 10 ................................ ..58
`
`Claim 13 ..................................................................... ..5 8
`
`Dependent Claims 14 and 16-17 ................................. ..59
`
`6.
`
`A PHOSITA Would Not Combine Morimoto with
`
`Oldham ................................................................................. ..59
`
`7.
`
`A PHOSITA Would Not Combine Morimoto with
`
`the “CMP / Etching References” and Bertin.......................... ..60
`
`V.
`
`CONCLUSION ........................................................................................ ..60
`
`ii
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`TABLE OF AUTHORITIES
`
`CASES
`
`Page(s)
`
`Burroughs Wellcome Co. v. Barr Labs., Inc.,
`40 F.3d 1223 (Fed. Cir. 1994) ........................................................................ ..23
`
`Continental Can Co. v. Monsanto C0,,
`
`948 F.2d 1264 (Fed. Cir. 1991) ...................................................................... ..20
`
`Cooper v. Golafarb,
`154 F.3d 1321 (Fed. Cir. 1998) ................................................................ ..22, 26
`
`Crown Operations Int’l, Ltd. v. Solutia Inc.,
`289 F.3d 1367 (Fed. Cir. 2002) ...................................................................... ..20
`
`Dynamic Drinkware, LLC v. Nat'l Graphics, Inc.,
`800 F.3d 1375 (Fed. Cir. 2015) ................................................................ ..22, 23
`
`Eli Lilly & Co. v. Zenith Goldline Pharms., Inc.,
`471 F.3d 1369 (Fed. Cir. 2006) ...................................................................... ..21
`
`In re Brouwer,
`
`77 F.3d 422 (Fed. Cir. 1996) .......................................................................... ..21
`
`In re NTP, Inc.,
`
`654 F.3d 1279 (Fed. Cir. 2011) ...................................................................... ..2l
`
`In re Robertson,
`169 F.3d 743 (Fed. Cir. 1999) ........................................................................ ..20
`
`In re Spiller,
`500 F.2d 1170 (CCPA 1974) ................................................................... ..23, 30
`
`KSR Int’l Co. v. Teleflex Inc.,
`550 U.S. 398 (2007) ....................................................................................... ..21
`
`Mahurkar V. C.R. Bard,
`
`79 F.3d 1572 (Fed. Cir. 1996) ................................................................. ..passim
`
`McGinley v. Franklin Sports, Inc.,
`262 F.3d 1339 (Fed. Cir. 2001) ...................................................................... ..22
`
`iii
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`Panduit Corp. v. Dennison Mfg. Co.,
`810 F.2d 1561 (Fed. Cir. 1987) ................................................................ ..46, 60
`
`Ruiz v. A.B. Chance C0.,
`
`234 F.3d 654 (Fed. Cir. 2000) ........................................................................ ..21
`
`Scripps Clinic & Research Found. v. Genentech, Inc.,
`927 F.2d 1565 (Fed. Cir. 1991) ...................................................................... ..20
`
`Tech. Licensing Corp. v. Videotek, Inc.,
`545 F.3d 1316 (Fed. Cir. 2008) ...................................................................... ..23
`
`STATUTES
`
`35 U.S.C. §102 ................................................................................................... ..22
`
`35 U.S.C. § 102(e) ....................................................................................... ..passim
`
`35 U.S.C. §316(e) ............................................................................................... ..23
`
`iv
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`EXHIBIT LIST
`
`2001
`2002?
`2003*
`2004
`
`2006
`
`2007
`
`2008
`
`2009
`
`2010
`
`201 1
`
`2012
`
`2013
`
`Descrition
`Declaration of Michelle C. Bates, dated Februa
`19, 2016
`1 Redline version of Default Standing_Protective Order
`Clean version of Default Standin Protective Order
`Agreed Protective Order Regarding the Disclosure and Use of
`Discovery Materials, Raytheon Co. v. Samsung Electronics Co.,
`Ltd, Civil Action No. 1:15—CV—341—JRG—RSP signed by Judge
`Pa ne on Auust 21,2015
`Declaration of John Abramic, dated February 19, 2016
`Email string between John Abramic and Matthew Smith, dated
`Februar 12, 2016
`
`IPR20l5—1201: Revised, Redlined version of Modified Protective
`Order
`
`Hughes Aircraft Invention Disclosure: Thermal Expansion Material
`(TEJW) Readout Chips, dated Aug. 8, 1990 “1990 Invention
`Disclosure” — [Bates numbered RAY00000176—184]
`PROTECTIVE ORDER MATERIAL - SEALED
`
`
`
`
`
`Hughes Aircraft Invention Disclosure: One step method of
`transferring thin film devices onto alternate substrates, dated Nov.
`11, 1992, “1992 Invention Disclosure”— [Bates numbered
`RAY00000185-88] [PROTECTIVE ORDER MATERIAL -
`SEALED
`
`Hughes Aircraft Independent Research and Development Technical
`Plan 1991, Vol. 3 “1991 IRAD” (excerpts) — [Bates numbered
`RAY00004572—5004] [PROTECTIVE ORDER MATERIAL
`(ITAR)- SEALED]
`Hughes Aircraft Independent Research and Development Technical
`Plan 1991, Vol. 3 “1992 IRAD” (excerpts) — [Bates numbered
`RAY00005005—5424] [PROTECTIVE ORDER MATERIAL
`(ITAR) - SEALED]
`Hughes Aircraft 1991 IR&D Technical Plan, “199l IRAD
`Appendices (Distribution List)” (excerpts) — RAY0000735 8-7651]
`PROTECTIVE ORDER MATERIAL — (ITAR - SEALED
`Hughes Aircraft 1992 IR&D Technical Plan, “1992 IRAD
`Appendices (Distribution List)” (excerpts) — [Bates numbered
`RAY00007652—7941_ [PROTECTIVE ORDER MATERIAL
`
`V
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non—U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval OfThe U.S. Department OfState, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`Exhibit
`Descri u tion
`— ITAR) - SEALED
`2014
`Lab Notebook No. LN1260 of Joe Bendik, dated Jan. 15, 1992
`
`2015
`
`2016
`
`2017
`
`2018
`
`2019
`
`2020
`
`2023
`
`[PROTECTIVE ORDER MATERIAL (ITAR) SEALED]
`Declaration of Ronald M. Finilla, dated Mar. 10, 2016 (“Finilla
`Decl.”) [PROTECTIVE ORDER MATERIAL (ITAR) -
`SEALED]
`Declaration of Joseph J. Bendik, dated Mar. 9, 2016 (“Bendik
`Decl.”) [PROTECTIVE ORDER MATERIAL (ITAR) -
`SEALED]
`Declaration of Gerard T. Malloy, dated Mar. 8, 2016 (“Malloy
`Decl.”) [PROTECTIVE ORDER MATERIAL (ITAR) -
`SEALED]
`
`Declaration of David Robinson Regarding the Actual Reduction to
`Practice ofU.S. Patent No. 5,591,678, dated Mar. 7,2016
`“Robinson Decl.”
`
`Declaration of Professor Eugene A. Fitzgerald, dated Mar. 11, 2016
`(“Fitzgerald Declfj
`The Technological Impact of Transistors”, J .A. Morton and W.J.
`Pietenol, Proceedins of Institute the of Radio Enineers (1958)
`
`U.S. Patent No. 2,981,877, “Semiconductor Device-and-Lead
`
`Structure,” Robert N. Noyce, issued Ar. 25, 1961
`“VLSI Technolo ,” S.M. Sze, McGraw-Hill, New York 1983
`“Cramming more components onto integrated circuits”, G.E. Moore,
`Electronics 38 1965
`
`“Progress in Digital Integrated Electronics”, G.E. Moore,
`International Electron Devices Meeting, IEEE, 1975
`
`“3—D Integration for VLSI Systems”, C.S. Tan, K.N. Chen, S.J.
`
`Koester, Pan Stanford Publishin;
`
`
`“Silicon VLSI Technology”, J.D. Plummer, M.D. Deal, P.B. Griffin,
`Prentice-Hall, NJ (2000)
`
`
` “Silicon Processing”, D.C. Gupta, ASTM Special Technical
`
`
`Publication 804, Philadel hia ( 1983)
`
`2028
`
`2029
`
`2030
`
`“Wet chemical etching of silicate glasses in hydrofluoric acid based
`solutions”, G.A.C.M. Spierings, J. Materials Science 28_(1 993)
`“Modeling of Chemical-Mechanical Polishing: A Review”, G. Nanz
`and L.E. Camilletti, IEEE Transactions on Semiconductor
`Manufacturing 8 (1995)
`
`“H drod namics of Slurr Flow in Chemical Mechanical Polishin:
`
`Vi
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`Exhibit Descrition
`
`A Review”, E.J. Terrell and C.F. Higgs 111, Journal of The Electrochemical Societ _, 153 2006)
`
`“Chemical mechanical polish: The enabling technology”, J .M.
`Steigerwald, IEDM 2008. IEEE International Electron Devices
`Meeting. Technical Digest (2008)
`"Anisotropic Etching of Crystalline Silicon in Alkaline Solutions
`Part I”, H. Seidel, L. Csepregi, A. Heuberger, H. Baumgartel, J.
`Electrochemical Soc. 137 1990)
`
`“Infrared-absorption spectroscopy of Si(100) and Si(111) surfaces
`after chemomechanical polishing”, G. J. Pietsch, G. S. Higashi, and
`Y. J. Chabal, J. A 1. Ph s. 78 (1995
`
`“Chemomechanical polishing of silicon: Surface termination and
`mechanism of removal”, G. J. Pietsch, G. S. Higashi, and Y. J.
`Chabal, A 1. Ph s. Letters 64 (1994)
`
`“Etch characteristics of KOH, TMAH and dual doped TMAH for
`bulk micromachining of silicon”, K. Biswas and S. Kal,
`Microelectronics Journal 37 (2006
`
`Hughes Aircraft Technology Center, Monolithic 3-D Packaging
`Approach Applied to WSI Associative String Processor (WASP),
`“1990 Research Proposal and White Paper” [PROTECTIVE
`ORDER MATERIAL (ITA_R) - SEALED]
`
`DeclarationofA. Bruce Buckman, Raytheon Co. v. Samsung
`
`Electronics Co., Ltd., Civil Action No. 1:15-CV-341—JRG—RSP, Dkt
`No. 100-2 (E.D. Tx Dec. 9, 2015) (“Buckman Decl. I:)_
`Declaration of A. Bruce Buckman, dated March 11, 2016 (“Buckman
`Decl. II”) [PROTECTIVE ORDER MATERIAL (ITAR) -
`SEALED]
`Email from Robert Hails to Counsel of Record dated February 17,
`2016
`
`Declaration of Ronald L. Williams, dated March 7, 2016 (“Williams
`Dec1.”
`
`2031
`
`2032
`
`2033
`
`2034
`
`2035
`
`2036
`
`2037
`
`2038
`
`2039
`
`2040
`
`
`
`Declaration of Joe_sph B. Tyra, dated Mar. 9, 2016 (“Tyra Decl.”)
`Raytheon Co. v. Samsung Electronics Co., Ltd., Civil Action No.
`1:15-CV-341—JRG—RSP, Dkt 90 “Joint Statement Construction and
`Prehearing Statement” (E.D. TX Dec. 9, 2015), and Dkt. 116-1,
`“Claim Construction Chart” (E.D. Tx Feb. 17, 2016)
`
`2043
`
`Excerpts from prosecution history of Application Serial No.
`08/006,120, Office action dated December 10, 1993
`
`V11
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily lmported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval OfThe U.S. Department OfState, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`Exhibit
`
`Descri u tion
`
`2044
`
`2045
`
`2046
`
`Iron Mountain Record Center: Raytheon Company Box Nos.
`71123591, 71123587
`
`Declaration of Peter Hudson, dated Mar. 9, 2016 (“Hudson Decl.”)
`
`Declaration of Arthur Medrano, dated March 10, 2016 (“Medrano
`Decl.”
`
`Declaration of William Mclnnis, dated March 10, 2016 (“Mclnnis
`
`U.S. Patent 3,332,137, “Method oflsolating Chips ofA Wafer of
`Semiconductor Material,” D. M. Kenn , issued Jul 25, 1967
`
`U.S. Patent 3,623,219, “Method For Isolating Semiconductor
`Devices From a Wafer of Semiconducting Material,” A.I. Stoller et
`al, issued Nov. 30, 1971
`
`U.S. Patent 4, 131,909, “Semiconductor Integrated Circuit Isolated
`Through Dielectric Material and Method For Manufactuming The
`Same,” Takashi Matsuda, et al, issued Dec. 26, 1978
`
`
`
`
`
`
`
`
`
`2051
`
`2052
`
`
`
`U.S. Patent 4,169,000, “Method of Forming An Integrated Circuit
`Structure With Fully-Enclosed Air Isolation,” Jacob Riseman, issued
`Sept. 25, 1979
`
`
`
`U.S. Patent 4, 467,340, “Pre—Multiplexed Schottky Barrier Focal
`
`Plane,” Jonathan P. Rode, Kuen Chow, issued Au. 21, 1984
`
`
`2053
`
`2054
`
`2055
`
`2056
`
`2057
`
`2058
`
`U.S. Patent 4,612,083, “Process of Fabricating Three—Dimensional
`Semiconductor Device,” Masaaki Yasumoto et al., issued Sept. 16,
`1986
`
`U.S. Patent 4,670,653, “Ifrared Detector and Imaging System,”
`Charles C. McConkle et al, issued June 2, 1987
`
`U.S. Patent 4,783,594, “Reticu1ar Detector Array,” Eric F. Schulte,
`Ichiro Ksasi, issued Nov. 8, 1988
`
`U.S. Patent 4,815,208, “Method of Joining Substrates For Planar
`Electrical Interconnections of Hybrid Circuits,” Curt R. Raschke,
`issued Mar. 28, 1989
`
`U.S. Patent 4,829,018, “Multilevel Integrated Circuits Employing
`Fused Oxide La ers,” Sven E. Wahlstrom, issued Ma 9, 1989
`
`U.S. Patent 4,943,491, “Structure For Improving Interconnect
`Reliability of Focal Plane Arrays,” Peter W. Norton et al., issued July
`24, 1990
`
`
`
`U.S. Patent 4,980,308, “Method of Making a Thin Film Transistor,”
`Hisao Hayashi, Takeshi Matsushita, issued Dec. 25, 1990
`U.S. Patent 5,024,723, “Method of Producin A Thin Silicon On
`
`viii
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval Of The U.S. Department Of State, Directorate Of Defense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`Exhibit
`
`Descri 0 tion
`
`Insulator Layer By Wafter Bonding and Chemical Thinning,” Ulrich
`M. Goesele, Volker E. Lehmann, issued June 18, 1991
`
`U.S. Patent 5,034,343, “Manufacturing Ultra-Thin Wafer Using A
`Handle Wafer,” Geore V. Rouse et al., issued Jul 23, 1991
`
`U.S. Patent 5,043,582, “X-Ray Imaging System and Solid State
`Detector Therefor,” John D. Cox et al., issued Aug_. 27, 1991
`U.S. Patent 5,182,624, “Solid State Electromagnetic Radiation
`Detector FET Array,” Nang T. Tran, et al., issued Jan. 26, 1993
`U.S. Patent 5,227,656, “Electro—Optica1 Detector Array,” Harold A.
`Timlin, Charles J. Martin, issued Jul
`13, 1993
`
`
`
`2061
`
`2062
`
`2063
`
`2064
`
`2065
`2066
`
`Signed Protective Order
`Declaration of John Abramic
`
`* Patent owner’s exhibits 2001-2007 were previously filed and are listed here again
`pursuant to 37 C.F.R. § 42.63.
`
`ix
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval OfThe U.S. Department Of State, Directorate OfDefense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON-CONFIDENTIAL)
`
`I.
`
`INTRODUCTION
`
`Petitioner Sony Corporation (“Petitioner”) requested inter partes review
`
`(“IPR”) of Claims 1-18 (“challenged claims”) of U.S. Patent No. 5,591,678 (“the
`
`’678 Patent”).
`
`(Paper No. 2 (“Petition”).) The Patent Trial and Appeal Board (the
`
`“Board”) instituted an IPR as to the challenged claims on six separate grounds,
`
`each of which is based on one of two primary references, Bertin and Morimoto.
`
`(Paper No. 6, 23-24.) For the reasons stated herein, Petitioner has not established
`
`that the challenged claims are unpatentable.
`
`II.
`
`SUMMARY OF ARGUMEN TS
`
`In the early l990’s, Dr. Ronald Finnila, Joseph Bendik and Jerry Malloy,
`
`scientists at Hughes Aircraft Company, were working to improve semiconductors
`
`for national defense applications,
`
`including the Trident Missile system. The
`
`inventors realized that enabling processing of the front and back side of a micro-
`
`circuit could improve devices that detect radiation and light rays, and provide a
`
`foundation for efficiently stacking other micro—circuits. But gaining access to the
`
`back side without destroying the thin, fragile, and expensive micro-circuits was a
`
`problem. Their solution was to create a novel fabrication method that would
`
`transfer the micro-circuit and wafer from one support to another and then remove
`
`the back—side
`
`support with etching.
`
`Their patented method permitted the
`
`fabrication of,
`
`inter alia, high-resolution image sensors that Raytheon used for
`
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non-U.S. Person, Country Or Entity, By Any Means, Without The
`Appropriate Approval OfThe US. Department Of State, Directorate OfDefense Trade Controls (DDTC)
`
`

`
`PUBLIC VERSION (NON—CONFIDENTIAL)
`
`defense and space applications. Many years after the invention, smartphone and
`
`camera manufacturers began using the invention to improve hand—held camera
`
`resolution. Raytheon sued several manufacturers and the defendants have now
`
`filed multiple IPR Petitions challenging the claims of the ’678 Patent, including the
`
`Petition in this proceeding. But Petitioner has failed to establish that the claims of
`
`the ’678 Patent are not patentable.
`
`A.
`
`The Challenged Claims Are Patentable Over Bertin
`
`Grounds 1-3 and 6 should be dismissed because the Bertin reference is not
`
`prior art. Bertin,
`
`the primary reference supporting these grounds is alleged by
`
`Petitioner to be prior art under 35 U.S.C. § l02(e). Patent Owner has shown that
`
`the every limitation of the claims of the ’678 Patent was conceived, actually
`
`reduced to practice, and thus invented, before the effective date of Bertin. Grounds
`
`1-3 and 6 cannot render the challenged claims unpatentable.
`
`Grounds 2, 3 and 6 also should be dismissed because a PHOSITA would not
`
`have combined the ambiguous Bertin teachings with either Morimoto or Ying.
`
`Morimoto is about chemical mechanical polishing (“CMP”), not etching, and fails
`
`to disclose etching down to an etch stop, including a silicon oxide etch stop. Ying
`
`fails to disclose relative etching, instead directing a person of hypothetical ordinary
`
`skill in the art (“PHOSITA”) to etch through a wafer for dicing. No PHOSITA
`
`would have combined these teachings with that of Bertin, who uses silicon oxide
`
`2
`This Document Contains Technical Data Controlled Under The International Traffic In Arms Regulations (ITAR) And May Not Be Exported,
`Reexported, Temporarily Imported, Transferred, Or Retransferred To Any Non—U.S. Person, Country Or Entity, By Any Means, Without The
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`as an insulator, not an etch stop for relative etching.
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`B.
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`The Challenged Claims are Patentable over Morimoto
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`Grounds 4-6 should be dismissed because a PHOSITA would have
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`understood that Morimoto discloses a method for manufacturing a semiconductor
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`that includes a polishing step, referred to as CMP, for removing material. The
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`record shows that a PHOSITA would not have thought, as Petitioner asserts, that
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`CMP is (1) a form of etching or (2)
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`is substitutable for etching. Rather, a
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`PHOSITA would have known that etching and CMP are two separate and
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`incompatible processing steps that function in different ways and yield different
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`results. Indeed, Patent Owner has shown that a PHOSITA knew that CMP was not
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`a form of etching, and that CMP was not substitutable with etching. In view of this
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`knowledge, a PHOSITA would have recognized that Morimoto does not teach the
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`use of etching for removal of silicon substrate. Accordingly, grounds 4-6 do not
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`render the challenged claims unpatentable.
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`III. THE ’678 PATENT
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`A.
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`Background Regarding ’678 Patent and Technology
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`In the early 1990’s, engineers at Hughes Aircraft Corporation invented a
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`new method of making a semiconductor device. That method became the ’678
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`Patent.
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`(Ex. 2015, W 2-9; Ex. 2016, 1111 2-7; Ex. 2017, W 2-6.) The ’678 Patent
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`covers a unique way to make a device by moving a microcircuit from one support
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`to another.
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`(Ex. 1001, 2:59-3:5.) This method efficiently permits engineers to use
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`the backside of the device and stack two microcircuits.
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`(Id., 2:32-33.) A sensor
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`made by this method is known as a thin-film, backside-illuminated (“BSI”) sensor.
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`Traditionally, image sensors were made by a front-side process.
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`(See id.,
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`1:14-23.) This process layered metal, sensors, and semiconductor material on top
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`of a wafer.
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`(See id., 1:14-23.) However, this process could not be used to make
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`thinner, more-sensitive sensors. (See id., 1:58-63.)
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`The ’678 Patent solved this problem by allowing engineers to place wiring
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`on the front side of a sensor, leaving the backside relatively unobstructed.
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`(See id.,
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`2:29-42.) This process allows engineers to work on both sides of the wafer.
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`(Id.)
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`One way to practice the method is to fl.lI‘I1lSh a first substrate with three portions —
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`an etchable layer, an etch-stop layer and a wafer.
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`(See id., 2:15-18.) The wafer
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`portion overlies the etch stop layer; the etch stop portion overlies the etchable
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`layer.
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`(Ex. 1001, 2:15-18.) Electronics are formed on or in the exposed surface of
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`the wafer.
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`(Id., 4:39-51.)
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`Wafer é
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`Etch— Stop ___,
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`Portion
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`Etchable 2'
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`(See Ex. 2038, 1137.)
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`The front side of the wafer and circuits are attached to a second substrate
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`which becomes the final support for the device.
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`(See Ex. 1001, 2:20-24.)
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`‘F-l11nhus:.1"Ir:rtP
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`Secarndl
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`Eu; mate
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`First
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`(See Ex. 2038, 1138.)
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`The etchable portion of the first substrate is etched away to permit access to
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`the backside of the electronics.
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`(Ex. 1001, 2:23-24, 29-33.) The etch-stop portion
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`protects these sensitive circuits during the etching process.
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`(See id., 2:52-56.) The
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`chemical etchant will react with, dissolve and remove the etchable portion, but the
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`etchant will either not react with, dissolve or remove the etch-stop portion or, if it
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`does react, will etch into the etch-stop portion relatively slowly compared to the
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`rate at which the etchable portion is removed.
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`(See id., 3:12-18, 5:52-62, 6:21-27.)
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`This process is known as relative etching.
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`(See id., 5:52-57.)
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`Another advantage of this process is that the second support substrate may
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`also feature microcircuits.
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`(See id., 3:26-36.) This allows engineers to create
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`three-dimensional, stacked electronics.
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`(Id.)
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