`0305-3091/81/0804-0249 $06.50/0
`
`(C) 1981 Gordon and Breach Science Publishers, Inc.
`Printed in Great Britain
`
`SHORT COMMUNICATION
`Electrical Properties of Titanium Nitride Thin Films Deposited by
`Reactive Sputtering
`
`K. KAWABATA
`Department of Electronic Engineering, Hiroshima Institute of Technology, Hiroshima, Japan
`
`and
`
`T. MUTO
`Department of Electronic Engineering, Tokyo Denki University
`
`Recently, tantalum nitride has become widely used as a
`resistive material for hybrid integrated circuits; however
`titanium also has suitable properties which are similar
`to tantalum, and moreover its cost is lower.
`In the paper, the electrical properties of titanium
`nitride films were studied with regard to the
`characteristics of resistive material. The films have
`been r.f. sputtered on glazed ceramic substrates in an
`argon-nitrogen plasma. The total pressure of mixed
`10 -3 Torr. The value
`gases of Ar and N2 was about 1
`of the partial pressure of N (PN) was fixed in the range
`10 -5 Torr, with the remaining
`10 -4 to 2
`from 2
`pressure being due to argon. During the sputtering
`process the substrate temperature was kept at constant
`as 300C.
`By the above method we obtained the following
`300/f cm.,
`characteristics for films; Resistivity: 270
`+ 100 ppm/C.
`TCR:
`100
`
`For the investigati.on of film structures, we
`performed X-ray analyses and found that film structure
`depended on the partial nitrogen pressure, Pr. When
`Pr was low, we observed small quantities of 0-Ti mixed
`in the TiN, but for higher N partial pressure, the films
`were mainly TiN. The size of the crystal grains also
`depended on PN. (e.g., sizes of 256
`and 150
`for a
`10 -5 Torr,
`10 -5 Torr and 3
`nitrogen pressure of 1
`respectively.)
`An investigation has also been made on the stability
`of the characteristics. We have stored samples in a N
`10 -4 Torr) at 300C for one hour,
`environment (1
`the TCR of the samples stabilized in the range
`+ 50 ppm/C.
`50
`In summary, we consider that titanium nitride films
`have similar properties to TaN.
`
`249
`
`
`
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