`
`United States Patent [19]
`Sasuga et al.
`
`[54] LIQUID CRYSTAL DISPLAY DEVICE WITH
`SHIELD CASING CONNECTED TO FRAME
`HOLDING THE DISPLAY ABOVE LOWER
`CASING HOLDING LIGHT SOURCE
`
`[75] Inventors: Masumi Sasuga; Junichi Ohwada;
`Akira Kobayashi; Masaru Fujita;
`Hiroshi Nakamoto, all of Mobara;
`Ryu Ono, Chiba; Tsutomu Isono,
`Ohtaki, all of Japan
`
`[73] Assignee: Hitachi, Ltd., Tokyo, Japan
`[21] App1. No.: 29,622
`M紅 .11,1993
`[22] Filed:
`
`[3叶
`Forei伊 ApplicationPriority Data
`Mar. 12, 1992 [J町 Japan............….......…-……4-053452
`
`[51] Int. Cl.6 ...・ H ・..……….G02F 1/1333; G02F 1/1335
`[52] U.S. CI・…...・ H ・-………………….359/83; 359/50
`[58] Field of Search……........……….. 359/50, 48, 83
`
`[56]
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`3,050,160 8/1962 Chesser ...................………… 189/36
`4,294,517 10/1981 Jakubek.…………...・ H ・.........….359/50
`
`4,367,467 1/1983 Emile, Jr.…........…………..359/83
`4,390,103 6/1983 Husbard…………“ M ・M ・......211/182
`4,486,077 12/1984 Torresdal ........・…………….359/83
`4,755,035 7/1988 Kopish et al・……............…“ 359/48
`4,772,1∞9/1988 Suenaga…...・ H ・.....................359/83
`4,878,738 11/1989 Hanami…………......・-…….359/83
`5,146,354 9/1992 Plesinger ...・ H ・-・“................・・・・ 359/83
`
`FOREIGN PATENT DOCUMENTS
`
`1・219823 9/1989 Japan ………・ H ・M ・....・ H ・-…・…・….359/48
`
`Primary Examiner-Anita Pellman Gross
`Attorney, Agent, or Firm-Antonelli, Terry, Stout &
`Kraus
`
`[57]
`
`ABSTRACT
`
`A liquid crystal display device which includes a shield
`casing made of a metal plate and having fixing pawls
`and f1xing hooks, an middle frame for holding a liquid
`crystal display, and a lower casing for packaging back
`lights. The fixing pawls of said shield casing are bent in
`corresponding recesses formed in the middle frame.
`Also, the f1xing hooks of said shield casing are f1tted on
`corresponding projections formed on the lower casing.
`
`7 Claims, 37 Drawing Sheets
`
`MDL
`
`Sony Corp. Exhibit 1009
`
`SONY_000677
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 1 of 37
`
`5,432,626
`
`F IG. 1
`
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`SONY_000678
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`u.s. Patent
`
`July 11, 1995
`
`Sheet 2 of 37
`
`5,432,626
`
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`u.s. Patent
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`July 11, 1995
`
`Sheet 3 of 37
`
`5,432,626
`
`FIG. 3
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`SONY_000680
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 4 of 37
`
`5,432,626
`
`F IG. 4
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`SONY_000681
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 5 of 37
`
`5,432,626
`
`FIG. 5
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`SONY_000682
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`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 6 of 37
`
`5,432,626
`
`FIG. 8
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`SONY_000683
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 7 of 37
`
`5,432,626
`
`FIG. 7
`
`SONY_000684
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 8 of 37
`
`5,432,626
`
`F IG. 8
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`SONY_000685
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`
`
`u.s. Patent
`
`July 11, 1995
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`Sheet 9 of 37
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`5,432,626
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`July 11, 1995
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`Sheet 10 of 37
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`5,432,626
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`July 11, 1995
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`Sheet 11 of 37
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`5,432,626
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`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 12 of 37
`
`5,432,626
`
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`u.s. Patent
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`July 11, 1995
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`Sheet 13 of 37
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`J uly 11, 1995
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`Sheet 14 of 37
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`July 11, 1995
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`Sheet 15 of 37
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`
`u.s. Patent
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`July 11, 1995
`
`Sheet 16 of 37
`
`5,432,626
`
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`SONY_000693
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 17 of 37
`
`5,432,626
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`SONY_000696
`
`
`
`u.s. Patent
`
`July.11, 1995
`
`Sheet 20 of 37
`
`5,432,626
`
`H J o n日
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`
`
`u.s. Patent
`
`J uly 11, 1995
`
`Sheet 21 of 37
`
`5,432,626
`
`S10
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`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 22 of 37
`
`5,432,626
`
`F IG. 23
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`
`u.s. Patent
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`July 11, 1995
`
`Sheet 23 of 37
`
`5,432,626
`
`F lG. 24
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 24 of 37
`
`5,432,626
`
`FIG.畠 25
`
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`SONY_000701
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`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 25 of 37
`
`5,432,626
`
`COH
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`SONY_000702
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 26 of 37
`
`5,432,626
`
`F lG. 27
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 27 of 37
`
`5,432,626
`
`F IG. 28
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`SONY_000704
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 28 of 37
`
`5,432,626
`
`F IG. 29
`
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`SONY_000705
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 29 of 37
`
`5,432,626
`
`30
`FIG
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`SONY_000706
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 30 of 37
`
`5,432,626
`
`FIG.
`
`31
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`SONY_000707
`
`
`
`u.s. Patent
`
`J uly 11, 1995
`
`Sheet 31 of 37
`
`5,432,626
`
`F lG. 32
`
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`SONY_000708
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 32 of 37
`
`5,432,626
`
`FIG.33
`
`ss
`
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`
`SONY_000709
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 33 of 37
`
`5,432,626
`
`F lG. 34
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`SONY_000710
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`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 34 of 37
`
`5,432,626
`
`LHL
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`SONY_000711
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 35 of 37
`
`5,432,626
`
`F IG. 38
`
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`SONY_000712
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 36 of 37
`
`5,432,626
`
`F IG. 37
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`SONY_000713
`
`
`
`u.s. Patent
`
`July 11, 1995
`
`Sheet 37 of 37
`
`5,432,626
`
`F IG. 38
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`SONY_000714
`
`
`
`1
`
`5,432,626
`
`2
`fixing hooks of said shield casing are fitted on corre-
`sponding projections formed on the lower casing.
`The liquid crystal display device can be easiIy re・
`paired and replaced in its back lights because the fixing
`5 pawls and hooks of the shieId casing can be easiIy re-
`moved and because the shield casing, the middle frame
`for holding the liquid crystal display and the lower
`casing for packaging the back lights are easily assem-
`bled and disassembled.
`
`LIQUID CRYSTAL DISPLAY DEVICE WITH
`SHIELD CASING CONNECTED TO FRAME
`HOLDING THE DISPLAY ABOVE LOWER
`CASING HOLDING LIGHT SOURCE
`
`BACKGROUND OF THE INVENTION
`
`1. Field of the Invention
`The present invention relates to a Iiquid crystal dis-
`play device and, more particularIy, to -a liquid crystal 10
`display ci~~i~~-~i-;cti;e~-~~tri~ iyp; usi~gthin JfiIm
`BR)EF DESCRIPTION OF THE DRAWINGS
`FIG. 1 is a top plan view showing an essential portion
`transistors or the like.
`of one pixel of the Iiquid crystal display of a color liquid
`2. Prior Art
`In a Iiquid crystal display device of active matrix ,~ crystal display circuit of active matrix type, to which is
`type, non~linear devices -(e.g., switching devices) are 15 ~~~li~d th~-p;e~~~-t-in~~ntion;
`disposed in a manner to co町esp~nd to a p!ur~Iit~.of -FIG. 2 is a section taken along line 2-2 ofFIG. 1 and
`pixel electrodes armged in matrix,respectively.Tpe shows onepixel anditsperiphe凶 portion;
`liquid crystal in each pixel is always drive,1n pnncIPIe, FIG.3is a section taken along line 3-3ofFIG.1and
`(at a duty ratio OHm-In comparison with the so-called shows an additional capacitor Cadd;
`simple matrix type"which employs a time division 20 FIG.4is a top plan view showing anEssential portion
`driving system, therefore, the active system has better of a liquid crystal display circuit arranged with a pluraI-
`contrast and has become an indispensable technique
`padiculady in a color liquid crysul display device-A ity ofpixds shown inHG.1;
`typical example of the switching devices is a thin Elm
`FIG.51s a top plan VIew drawing only layers g2and
`t r a n s i s t o r ( T m . 2 5 A S Orth.Pixel shown ip FIG.1;
`A liquid crystal display circuit (or a liquid crystal
`FIG.61s a top plan VIew drawing only layers dL d2
`display panel)1s constructed:by superposing a lower and d3ofthe pixel shoγn in FIG. 1;
`substrate,which is formed,over a lower transparent
`FIG.7is a top plan VIew drawing only a pixeldec-
`glass sub~trate with referen~e to a liquid crystaI-layer, tr.?~e la~er: a.light-~hi:!.~~g _fiIm and a color filter layer
`;equentiaIly with a thin film transistor, a íranspa~ent 30 of~:_ p~x~l show~ in ~IG. ~;
`pixel electrode, a passivation film for the thin film tran-
`~ FIG. 8 is a top plan view showing佃 essentialportion
`sistor, and a lower orientation film for orienting liquid of only the pixel electrode layer, the light-shielding
`crystal molecules; and an upper substrate, which is layer and the color filter layer shown in FIG. 6;
`formed over an upper transparent glass substrate se・
`FIGS.9(A) and 9(B) present a top plan view and a
`quentialIy with a black matrix, a color fiIter, a passiv・ 35section showing the vicinity of a connecting portion
`ation fiIm for the color fIlter, a common transparent between a gate terminaI GTM and a gate signal line
`pixel electrode and an upper orientation fiIm, such that GL;
`their orientation films are opposed to each other; by
`FIGS. 10(A) and 10(B) present a top plan view and a
`bonding the two substrates by a sealing material ar- section showing the vicinity of a connecting portion
`ranged around the edges of the substrates; and by s回 1・ 40between a drain terminal DTM and a video signal line
`ing up the liquid crystals between the two substrates. DL:
`Incidentally,a back light is arranged at the side of the
`FIG.11is an equivalent circuit diagram showing a
`lower s u b s t r a t e . . l i q u i d crystal display circuit of a color liquid crystal
`Here,the liquid crystal display device of actIve ma-display device of active matrix type;
`trix type using the thin f11m transistors is known in Japa-45FIG.12is an equivalent circuit diagram showing the
`nese Patent Laid-Open No.309921/19880r on pp.193pixel shown in FIG.1;
`to 210 of Nikkei Electronics entitled “Active Matrix
`FIG. 13 presents a flow chart of sections of a pixel
`Type Color Liquid Crystal Display of 12.5Type portion and a gate terminal portion and shows the fabri-
`Adopting Redundant Construction" and issued on Dec.
`cation steps A to C at the side of a substrate SUB1;
`15, 1986 by NIKKEI McGRA W-HILL, for example. 50
`FIG. 14 presents a flow chart of sections of the pixel
`SUMMARY OF THE INVENTION
`portion and the gate terminal portion and shows the
`~~~~:ation steps D to F at the side of the substrate
`Since a shield casing made of a metal plate or a Iiquid
`SUB1;
`crystal display circuit is fixed by means of rivets, the
`liquid crystal display device of the pdor adis troubled 55FIG.15presents a now chart of sections of the pixel
`by a difficulty in repair or replacement of the back portion and the gate terminal po此ionand shows the
`Ughts.
`~~~:ati()n steps G. to 1 at the side of the substrate
`~ J
`-~~
`-c ~- -- --c
`An object of the present invention is to provide a SU~~
`Iiquid crystal display device which can be easi1y re帽
`FIG.16 is a top plan view for explaining the con-
`p.ili-ed 0; repaired ir; its back lights.
`60 str~:~o~ ~ .matrix p.eriphe:al P?rtio_n of a display panel;
`According to one embodime~t of the present inven-
`FIG._ 17 i~ a panel top plan view f?~~~agg~rating and
`tion, there is provided a Iiquid crystal display device
`ex!,la~~ing the peripheral portion of FIG. 16 more spe-
`which comprises: a shield casing made of a-metal plate cificaIly;
`and having-fixing pawls and flxing hooks; an middle
`FIG. 18 is an enlarged top plan view showing a cor-
`frame for :holding a Iiquid crystal display; and a lower 65 ner of a display pane1 inc1uding an electric connection
`casing for packaging back Iights, wherein the fixing portion of upper and lower substrates;
`pawls of said shield casing are bent in corresponding
`FIG. 19 is a section showing the pixel portion of a
`recesses formed in the middle frame, and wherein the matrix at the center and the vicinity of a panel corner
`
`SONY_000715
`
`
`
`4
`vention. Incidentally, the parts having identical func-
`tions' are designated at identical reference characters
`throughout all the Figures for describing the embodi-
`ments, and their repeated descriptions will be omitted.
`5
`
`3
`and the vicinity of a video signal terminal portion at the
`two sides;
`FIG. 20 is a section showing panel edge portions with
`and without a scanning signal terminal at the lefthand
`and righthand sides;
`SUMMARY OF MATRIX PORTION
`FIG. 21 is a section showing a structure of a tape
`carrier package TCP, in which an integrated circuit
`FIG. 1 is a top plan view showing one embodiment of
`chip CHI constituting a drive circuit is mounted on a one pixel and its peripheral portion of the active matrix
`f1exible wiring substrate;
`type color liquid crystal display device to which is
`FIG. 22 is .a.s~ct!on showing the state of~~s.sential 10 applied the present invention.-FlG. 2 is a section taken
`portion, in which the tape carrier package T<:;J>_is c~n- along line 2-2 of FIG. 1. FIG. 3 is a section taken
`~ected with.a .~i~eo signa_l ~!:~uit terminal DTP of a along line 3-3 of FlG. 1. On the other hand, FIG. 4 is
`liq~~d_ cr!'!t~l displa~ p~n~l PNL;
`a top plan view showing the case in which a plurality of
`F!? 23 i~ a.~ e~plode~ ~erspective view showing a pix~ls. shown in FIG. 1-are arranged.
`liquid crystal display m o d u l e ; 1 5 A s shown in FIG.1 each pixel is arranged in a cross
`FIG. 24 P問 sentsupper side,front side,rear side, region (denned by four signal lines)between two adja・
`righthand side and lem1and side views ofa shield caSIng cent scanning signallines (e.g.,gate signal lines or hori-
`of the liquid crystal display m o d u l e ; z o n t a l signal lines)GL and two video signal lines (e.g.,
`FIG.25is a PErspective view showing the shield drain signal lines or Vertical signal lines)DL Each pixel
`casing and taken from the upper s i d e ; . 2 0 includes a thin film trmsistor TFT,a transp釘 entpixel
`FIG.26is a uppe?sidfviewぬowingthe sute,m electrode IT01and a latching capacitor Cadd.TEe
`which peripheral drIVE CIrcuits are packaged in the scanning signal lines GL are extended in the column
`liquid crystal display p a n e l ; d i r e c t i o n and arranged in plurality in the row direction.
`FIG. 27 presents upper side, front side, rear side,
`The video signal lines DL are extended in the row
`righthand side and lefthand side views of a middle 25
`frame;directionandarnngedhpluralityinthecolumndirec・
`tion.
`As shown in FIG.2.the thin Elm transistor TFT and
`
`P FIG.28is a lower side view showing the middle
`
`5,432,626
`
`E22 29 is a p ersp ective V附 sぬ伽h加O側WI均n昭gt恥.hem耐i泌刷dd仙le t批he児削吋巴刊t甘r悶ran釘組n路叩s
`frame and taken from the upper s i d e ; 3 0 s i d e of a lower t訂ranspar陀en凶tglass substrate SUBl acros鈴3
`FIG.30is a lower side view showing a drive circuit a liquid crysul layer LC,and a color film FILmd a
`subst;at~ t~-b~ -~~~~t~d ~n t"he ~iddï~f;~~~: ------_.
`~ack "~atri~ pattern BM for light sh!elding are fo~:~ at
`FIG.31isamppersideviewshowingthee-lmction the side ofan upper tmspmnt glass substrate SUB2.
`state between the pedpherd drive circuit substrate (as The side of the lower transparent glass substrate SUB1
`viewed from the upper side)ofthe liquid crystal display 35is made to have a thickness of about 1.1 m m,for exam-
`and the drive circuit substrate (as viewed from the PIe-On the both surfaces of the transparent glass sub-
`lower side)to be mounted on the middle frame;strates SUB1md SUBZ,there are formed silicon oxide
`FIG.32presents upper side,rear side,righthand side layers SIO which are deposited by the dip treatment.
`and le氏handside views of a back light suppod;Accordingly,even if there exist sharp defects at the
`FIG.33is a perspective view showing the back light 40surfaces of the transparent glass substrates SUB1md
`support and taken from the upper s i d e ; S U B 2,the scanning signal lines GL as well as the color
`FIG. 34 presents upper sid~ .(or ref1ection side), rear
`~lter. FIL to?e deposited ther~on can be protected .from
`side, righthand side and le仇handside of a lower ~~sing; the sharp def~cts since the defects are covered with the
`sili~on ?xide l~yer SIO.
`FIG. 35 is a lower side view of the lower casing;
`FIG. 36 is a perspective view showing the lõ~er 45 On ~~_surfac~ of the upper transparent glass sub-
`casing and taken. from the upper side; _
`strate SUB2 at the inner side (or the side of the liquid
`FIG. 37 presents upper side, rear side, righthand side crystal LC), there are sequentially laminated the light-
`and lefthand side views showing the state, in which the
`shiel~iIlg film B M, the color filter FIL, a passivation
`back light support, back lights' and. an inverter circuit film PSV2, a common transparent pixel electrode IT02
`substrate are mounted in the lower casing;
`50 (or COM) and an upper orientation film ORI2.
`FIG.38is a section (as taken along line 38-38of
`SUMMARY OF MATRIX PERIPHERY
`FIG. 34) of the lower casing; and
`FIG. 39 is a section taken along line 39-39 of FIG.
`37.
`
`FIG. 16 is a top plan view showing an essential por・
`tion of the periphery of a matrix (AR) of a display panel
`55 PNL including the upper and lower glass substrates
`DESCRIPTION OF THE PREFERRED
`SUBl and SUB2. FIG. 17 is a top plan view further
`EMBODIMENTS
`exaggerating the peripheral portion. FIG. 18 is an en-
`The present invention, other objects of the present larged top plan view showing the vicinity of a seal
`invention, and other features of the present invention portion SL corresponding to the lefthand upper corner
`will become apparent from the following description to 60 of the panel of FIGS. 16 and 17. Moreover, FIG. 19
`be made with reference to the accompanying drawings. presents a section of FIG. 2 at the lefthand side, a sec-
`tion taken from line 19a 19a ofFIG. 18 at the righthand
`ACTIVE MATRIX LIQUID CRYSTAL DISPLAY side,md a section showing the vicinity of an external
`DEVICE
`connection terminal DTM, to which is connected a
`Here will be described in the following the construc-65 video signal drive circuit. Likewise, FIG. 20 presents a
`tion of the present invention in connection with em・ sectionshowing the vicinity of an external connection
`bodiments of a color liquid crystal display device of terminal GTM, to which is connected a scanning cir-
`active matrix type, to which is applied the present in- cuit, at the lefthand side and a section showing the
`
`SONY_000716
`
`
`
`5,432,626
`
`6
`5
`vicinity of a seal portion having no external connection
`posing the lower transparent glass substrate SUBl and
`terminal at the righthand side.
`the upper transparent glass substrate SUB2; by injecting
`In a fabrication of this panel, a plurality of devices are
`the liquid crystal LC from the opening INJ of the seal
`simultaneously worked and divided by a single sheet of
`member SL to seal the injection entrance INJ with the
`glass substrate so as to improve the throughput, if the 5
`epoxy resin or the like; and by cutting the upper and
`panel has a small size, but a glass substrate having a
`lower substrates.
`standardized size for any kind is worked and is reduced
`THIN FILM TRANSISTOR TFT
`to the sizes matching the individual kinds so as to share
`If a positive bias is applied to the gate electrode GT,
`the fabrication facilities, if the size is large. In either
`case, the glass is cut after a series of steps. In FIGS. 16 10 the thin film transistor TFT has its channel resistance
`to 18 showing the latter example, FIGS.16 and 17 show reduced between its source and drain. If the bias is
`the state after the upper and lower substrates SUBl and reduced to zero, the thin film transistor TFT operates to
`SUB2 have been cut, and FIG. 18 shows the state be- have its channel resistance increased.
`fore the cutting operation. Letters LN designate the
`The thin film transistor TFT of each pixel is divided
`edges ofthe two substrates before the cutting operation, 15 into two (or plurality) in the pixel so that it is composed
`and characters CTl and CT2 designates the individual of thin film transistors (or divided thin film transistors)
`positions at which the substrates SUBl and SUB2 are to TFTl and TFT2. These thin film transistors TFTl and
`be cut. In either case, the size of the upper substrate TFT2 are individually made to have a substantially
`SUB2 is so limited to the inside of the lower substrate equal size (in the channel length and width). Each of
`SUBl that the portions (as located at the upper and 20 these divided thin film transistors TFTl and TFT2 is
`lower sides and the lefthand side in the Figures), in composed mainly of a gate electrode GT, a gate insulat-
`which external connection terminal groups Tg and Td ing film GI, an i-type (i.e., intrinsic type not doped with
`(although suffixes are omitted) are present in the com・ aconductivity type determining impurity) amorphous
`pleted state, may be exposed to the outside. The termi- silicon (Si) semiconductor layer AS, and a pair of
`nal groups Tg and Td are named such that the scanning 25 source electrode SDl and drain electrode SD2. Inci-
`line connecting terminal GTM, the video signal circuit dentally, the source and drain are intrinsically deter-
`connecting terminal DTM and their leading lines are mined in dependence upon the bias polarity inbetween,
`collected in plurality at the unit of a tape carrier pack- and this polarity is inverted during the operation in the
`age TCP (as shown in FIGS. 20 and 21) on which is circuit of the present display device. Thus, it should be
`packaged an integrated circuit chip CHI. The leading 30 understood that the source and drain are interchanged
`line from the matrix portion of each group to the exter- during the operation. In the following description, how-
`nal connection terminal portion is inclined toward the ever, one is fixed as the source whereas the other is fixed
`two ends. This is because the terminals DTM and GTM as the drain, for conveniences only.
`of the display panel PNL are made to match the array
`pitch of the package TCP and the connection terminal 35
`The gate electrode GT is formed to project perpen-
`pitch at each package TCP.
`Between and along he edges of the transp釘 entglass dicularly (i.e., upward, as viewed in FIGS. 1 and 5)
`plates SUBl and SUB2, there is formed the seal pattern from the scanning signallines GL (or branched in the
`SL for sealing the liquid crystal LC excepting a liquid “T・shape"),as shown in detail in FIG. 5 (presenting a
`crystal entrance INJ. The seal material is made of an 40 top plan view showing the second conductive layer g2
`epoxy resin, for example.τne common transparent and i-type semiconductor layer AS ofFIG.l only). The
`pixel electrode IT02 at the side ofthe upper transparent gate electrode GT is extended to the regions to be indi-
`glass substrate SUB2 is connected at the four corners in vidually formed with the thin film transistors TFTl and
`the present embodiment with a leading line INT, which TFT2. These thin film transistors TFTl and TFT2 have
`is formed at the side of the lower transparent glass sub-45 their individual gate electrodes GT integrated (as their
`strate SUB1, in at least one portion by a silver paste common gate electrode) to merge into the scanning
`material AGP. The leading line INT is formed at the signalline GL. The gate electrode GT is constituted by
`same fabrication step as that of the later-described gate the single level conductive layer g2. The second con-
`ductive layer g2 is formed, for example, by sputtering
`terminal GTM and drain terminal DTM.
`The orientation films ORI1 and ORI2, the transpar-50 aluminum (Al) in the thickness of about 1,α氾 to5,5∞
`ent pixel electrode ITOl, the common transparent pixel angstroms. On the gate electrode GT, there is provided
`electrode IT02, and the individuallayers are formed in an anodized oxide film AOF of Al.
`the seal pattern SL. Polarization plates POLl and
`This gate electrode GT is made so slightly large as to
`POL2 are individually formed on the outer surfaces of cover the semiconductor layer AS completely (as
`the lower transparent glass substrate SUBl and the 55 viewed upward), as shown in FIGS. 1 and 2 and FIG.
`upper transparent glass substrate SUB2. The liquid 5. In case, therefore, back lights BL such as fluorescent
`crystal LC is filled in the region which is defined by the lamps are attached to the bottom ofthe substrate SUB1,
`seal pattern SL between the lower orientation film this opaque Al gate electrode GT establishes a shadow
`ORI1 and the upper orientation film ORI2 for setting to shield the semiconductor layer AS from the back
`the orientations of the liquid crystal molecules. The 60 lights, thus substantially eliminating the conducting
`lower orientation film ORI1 is formed over a passiv- phenomenon due to the optical irradiation, i.e., the
`ation film PSVl at the side of the lower transparent deterioration of the OFF characteristics of the TFTs.
`Here, the intrinsic size ofthe gate electrode GT is given
`glass substrate SUB1.
`This liquid crystal display device is assembled: by the least neces鈎 rywidth (including the positioning
`superposing the individual layers at the sides of the 65 allowance of the gate electrode GT, the source elec-
`lower transparent glass substrate SUBl and the upper trode SDl and the drain electrode SD2) for extending
`transparent glass substrate SUB2; by forming the seal between the source and drain electrodes SDl and SD2.
`pattern SL at the side of the substrate SUB2; by super幽
`Thedepth for determining that channel width W is
`
`GATE ELECTRODE GT
`
`SONY_000717
`
`
`
`5,432,626
`
`7
`8
`The transparent pixel electrode ITOl is connected
`determined in dependence upon the factor W /L deter-
`mining the mutual conductance gm, i.e., the ratio to the
`with both the source electrode SDl of the thin film
`distance (i.e., the channellength) L between the source
`transistor TFTl and the source electrode SDl of the
`and drain electrodes SDl and SD2. The size ofthe gate
`thin film transistor TFT2. Even if, therefore, one of the
`thin film transistors TFTl and TFT2 become defective,
`electrode GT in the present liquid crystal display device 5
`is naturally made larger than the aforementioned intrin-
`a suitable portion may be cut by a laser beam in case the
`SIC Slze.
`defect invites an adverse action. Otherwise, the situa-
`tion may be left as it is because the other thin film tran同
`sistor is normally operating. Incidentally, both the two
`The scanning signal line GL is constituted by the 10 thin film transistors TFTl and TFT2 scarcely become
`second conductive film g2. The second conductive film defective, and the probability of the point defect or line
`g2 of the scanning signalline GL is formed at the same defect can be drastically reduced by that redundant
`step as and integrally with the second conductive film system. The transparent pixel electrode ITOl is formed
`g2 of the gate electrode GT. Moreover, the scanning of a first conductive film dl, which is made of a trans-
`signalline GL is also formed thereon with the anodized 15 parent conductive film (of Indium-Tin-Oxide, i.e., ITO
`or NESA film) to have a thickness of 1,α)() to 2,αm
`oxide film AOF of Al.
`angstroms (e.g., about 1,400 angstroms in the present
`liquid crystal display device).
`
`SCANNING SIGNAL LINE GL
`
`GATE INSULATING FILM GT
`
`i-TYPE SEMICONDUCTOR LAYER AS
`
`SOURCE ELECTRODE SDl AND DRAIN
`ELECTRODE SD2
`
`The insulating film GI is used as the individual gate
`insulating films of the thin film transistors TFTl and 20
`TFT2. The insulating film GI is formed over the gate
`The individual source electrodes SDl and drain elec-
`electrode GT and the scanning signal line GL. The
`insulating film GI is formed of, for example, a silicon trodes SD2 of the divided thin film tr組 sistorsTFTl
`nitride film prepared by the plasma CVD, to have a and TFT2 are formed over the semiconductor layer AS
`thickness of 1,200 to 2,700 angstroms (e.g., about 2,000 25 and separately from each other, as shown in FIGS. 1
`angstroms in the present liquid crystal display device). and 2 and FIG. 6 (presenting a top plan view showing
`The gate insulating film GI is formed to enclose the the layers dl to d3 of FIG. 1 only).
`entirety ofthe matrix portion AR, as shown in FIG. 18, Each ofthe source electrode SDl and the drain elec-
`and to have its peripheral