EXHIBIT 1003
`
`U.S. Patent Application Publication
`No. 2004/0188790 to Arndt et al.
`
`(“Arndt II”)
`
`

`
`(19) United States
`(12) Patent Application Publication (10) Pub. No.: US 2004/0188790 A1
`(43) Pub. Date:
`Sep. 30, 2004
`Arndt et al.
`
`US 20040188790A1
`
`(54)
`
`(75)
`
`(73)
`
`(21)
`(22)
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`(63)
`
`OPTOELECTRONIC SEMICONDUCTOR
`COMPONENT
`
`Inventors: Karlheinz Arndt, Regensburg (DE);
`Herbert Brunner, Regensburg (DE);
`Franz Schellhorn, Regensburg (DE);
`Gunter Wait], Regensburg (DE)
`
`Correspondence Address:
`FISH & RICHARDSON PC
`225 FRANKLIN ST
`BOSTON, MA 02110 (US)
`
`No. 09/043,840, ?led on Nov. 18, 1999, noW Pat. No.
`6,459,130.
`
`(30)
`
`Foreign Application Priority Data
`
`Sep. 29, 1995 (DE) ................................... .. 195 36 454.6
`
`Publication Classi?cation
`
`(51) Int. Cl.7 .............................................. .. H01L 31/0232
`
`(52) Us. 01. ....................................... .. 257/432; 250/214.1
`
`Assignee: Osram Opto Semiconductors GmbH, a
`Germany corporation
`
`(57)
`
`ABSTRACT
`
`Appl. No.:
`
`10/819,638
`
`Filed:
`
`Apr. 6, 2004
`
`Related US. Application Data
`
`Continuation of application No. 10/173,055, ?led on
`Jun. 17, 2002, Which is a continuation of application
`
`Aradiation-emitting and/or radiation-receiving semiconduc
`tor component in Which a radiation-emitting and/or radia
`tion-receiving semiconductor chip is secured on a chip
`carrier part of a lead frame. The chip carrier part forms a
`trough in the region in Which the semiconductor chip is
`secured Wherein the inner surface of the trough is designed
`in such a Way that it constitutes a re?ector for the radiation
`emitted and/or received by the semiconductor chip.
`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 1
`
`

`
`Patent Application Publication Sep. 30, 2004 Sheet 1 0f 2
`
`US 2004/0188790 A1
`
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`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 2
`
`

`
`Patent Application Publication Sep. 30, 2004 Sheet 2 0f 2
`
`US 2004/0188790 A1
`
`FlG2b ‘iii
`
`FIG 3
`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 3
`
`

`
`US 2004/0188790 A1
`
`Sep. 30, 2004
`
`OPTOELECTRONIC SEMICONDUCTOR
`COMPONENT
`
`RELATED APPLICATION DATA
`
`[0001] The present application is a continuation of appli
`cation Ser. No. 09/043,840 ?led Nov. 18, 1999, Whose
`disclosure is incorporated by reference in its entirety herein.
`
`BACKGROUND OF THE INVENTION
`
`[0002] 1. Field of the Invention
`
`[0003] The present invention relates to a radiation-emit
`ting and/or radiation-receiving semiconductor component in
`Which a radiation-emitting and/or radiation-receiving semi
`conductor chip is secured on a chip carrier part of a lead
`frame Wherein the semiconductor chip and at least a partial
`region of the chip carrier part are surrounded by an encap
`sulation.
`
`[0004] 2. Description of the Prior Art
`
`[0010] In an embodiment, the chip carrier part forms a
`trough in the region in Which the semiconductor chip is
`secured. The inner surface of the trough is designed in such
`a Way that it forms a re?ector for the radiation Which is
`emitted and/or received by the semiconductor chip; the
`trough of the chip carrier part projects at least partially from
`the encapsulation in such a Way that the chip carrier part can
`be electrically and/or thermally connected in the region of
`the trough.
`
`[0011] In an embodiment, the lead frame has the chip
`carrier part and a connection part arranged at a distance from
`the chip carrier part, With tWo external connections Which
`project from the encapsulation at opposite sides.
`
`[0012] In an embodiment, at least some of the inner
`surfaces of the trough of the chip carrier are coated With a
`re?ection-enhancing material.
`
`[0013] In an embodiment, the external connections of the
`chip carrier part are broader than the external connections of
`the connection part.
`
`[0005] Such a semiconductor component is disclosed, for
`example, in European Patent Application EP 400 176. The
`latter describes a so-called top LED, in Which a semicon
`ductor chip is secured on a planar chip carrier part of a lead
`frame. The lead frame is composed of the chip carrier part
`and a connection part, arranged separately from the latter,
`With a respective external connection.
`
`[0014] In an embodiment, the encapsulation has a radia
`tion-impermeable base body With a recess and a radiation
`permeable WindoW part Which is arranged in the recess. The
`radiation-impermeable base body encapsulates at least a
`partial region of the chip carrier part in such a Way that at
`least the trough of the chip carrier part is arranged in the
`recess.
`
`[0006] The chip carrier part includes the semiconductor
`chip. The connection part and partial regions of the external
`connections are surrounded by an encapsulation Which com
`prises a radiation-impermeable base body having a recess
`and a radiation-permeable WindoW part Which ?lls up this
`recess. The chip carrier part and the connection part are
`surrounded by the base body, or embedded in the latter, in
`such a Way that partial regions of the upper sides of the chip
`carrier part and of the connection part are ?ush With the
`remaining bottom surface of the recess.
`
`[0007] Except for its underside, by Which it rests on the
`chip carrier part, the semiconductor chip is completely
`surrounded by the radiation-permeable WindoW part. The
`recess, Which is completely ?lled up by the radiation
`permeable WindoW part, is fashioned in such a Way that it
`forms a re?ector for the radiation emitted by the semicon
`ductor component.
`
`[0008] The present invention is directed to developing a
`radiation-emitting and/or radiation-receiving semiconductor
`component of the type mentioned in the introduction in such
`a Way that it has an increased radiant intensity and can be
`produced in a simple manner. At the same time, this semi
`conductor component is to have good heat dissipation from
`the semiconductor chip.
`
`SUMMARY OF THE INVENTION
`
`[0009] In an embodiment of the present invention, the chip
`carrier part forms a trough in the region in Which the
`semiconductor chip is secured. The inner surface of the
`trough is designed in such a Way that it forms a re?ector for
`the radiation Which is emitted and/or received by the semi
`conductor chip. The chip carrier part has at least tWo external
`electrical connections Which project from the encapsulation
`at various points thereof.
`
`[0015] In an embodiment, the upper edge of the trough
`extends beloW the upper edge of the recess. The partial
`region of the inner surface of the recess Which is not covered
`by the trough is designed in such a Way that it forms a
`re?ector for the radiation emitted by the semiconductor chip.
`
`[0016] In an embodiment, some of the inner surfaces of
`the recess of the radiation-impermeable base body are
`coated With a re?ection-enhancing material.
`
`DESCRIPTION OF THE DRAWINGS
`
`[0017] Additional features and advantages of the present
`invention are described in, and Will be apparent from, the
`Detailed Description of the Presently Preferred Embodi
`ments and from the DraWings.
`
`[0018] FIG. 1a is a plan vieW of an embodiment of a
`semiconductor component in accordance With the present
`invention;
`[0019] FIG. 1b is a cross-sectional vieW of the semicon
`ductor component shoWn in FIG. 1a taken along the line
`A-A;
`[0020] FIG. 1c is a cross-sectional vieW of the semicon
`ductor component shoWn in FIG. 1a taken along the line
`B-B;
`[0021] FIG. 2a is a plan vieW of another embodiment of
`the semiconductor component of the present invention;
`
`[0022] FIG. 2b is a cross-sectional vieW of the semicon
`ductor component shoWn in FIG. 2a taken along the line
`C-C; and
`
`[0023] FIG. 3 is a sectional vieW through another embodi
`ment of the semiconductor component in accordance With
`the present invention.
`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 4
`
`

`
`US 2004/0188790 A1
`
`Sep. 30, 2004
`
`DETAILED DESCRIPTION OF THE
`PREFERRED EMBODIMENTS
`
`[0024] The semiconductor component of FIGS. 1a to la
`is a so-called top LED Which is constructed as a surface
`mounted device. It is composed of a metallic read frame,
`comprising a chip carrier part 2, a connection part 10, tWo
`external connections 11, 12, a radiation-emitting semicon
`ductor chip 1 secured on the chip carrier part 2, and a
`parallelepipedal encapsulation 3. The semiconductor chip 1
`has a contact metalliZation layer 16 on its top side, and a
`contact metalliZation layer 17 on its underside. The contact
`metalliZation layer 17 on the underside is electrically con
`ductively connected to the chip carrier part 2, for example,
`by using a metallic solder or an electrically conductive
`adhesive, and the contact metalliZation layer 16 on the top
`side is electrically conductively connected to the connection
`part 10 by using a bonding Wire 20, Which is composed, for
`example, of gold or another suitable metallic material. A
`trough 4 is formed, for example, by embossing, in that
`region of the chip carrier part 2 in Which the semiconductor
`chip 1 is secured, the inner surface 5 of the trough has the
`approximate shape of an upside-doWn truncated cone and
`forms a re?ector for the radiation emitted by the semicon
`ductor chip 1. The external connections 11, 12 of the chip
`carrier part 2 and of the connection part 10 each project from
`this encapsulation 3 on opposite sides and are bent outside
`the encapsulation 3 doWnWards and then inWards toWards
`the centre of the encapsulation 3. HoWever, they can also
`have any other desired form.
`[0025] The encapsulation 3 is produced in tWo parts from
`a radiation-impermeable base body 7 having a recess 8 and
`a radiation-permeable WindoW part 9 Which ?lls up this
`recess 8. The base body 7 and the WindoW part 9 are
`composed, for example, of a ?lled synthetic resin or of a
`thermoplastic and, respectively, of a transparent synthetic
`resin or polycarbonate. Suitable ?llers for synthetic resin
`are, for example, metal poWders, metal oxides, metal car
`bonates or metal silicates. The chip carrier part 2 and the
`connection part 10 are surrounded by the radiation-imper
`meable base body 7, or embedded in the latter, in such a Way
`that a partial region of the connection part 10 and at least that
`partial region of the chip carrier part 2 in Which the trough
`4 is situated rest on the bottom surface 19 of the recess 8.
`The recess 8 has a larger depth than the trough 4, so that the
`trough 4 is arranged completely Within the recess 8 and the
`inner surface 13 of the recess projects upWards beyond the
`trough 4.
`[0026] In a preferred embodiment, the inner surface of the
`trough 4 and possibly also that part of the top side of the
`connection part 10 Which adjoins the WindoW part 9, are
`polished or coated With a re?ection-enhancing material for
`the purpose of improving the re?ection. A suitable re?ec
`tion-enhancing material is, for example, a lustrous lacquer or
`aluminium, Which is vapour-deposited, sputtered on or
`applied using any other suitable method. Additionally, those
`regions of the inner surface 13 Which are not covered by the
`chip carrier part 2 and connection part 10 can also be
`provided With a re?ection-enhancing layer as a result, these
`regions, too, re?ect the radiation emitted by the semicon
`ductor chip 1 in the intended main radiation direction 6. A
`lustrous lacquer or aluminium is also suitable for this
`purpose and may be applied by the methods mentioned
`above.
`
`[0027] The recess 8 does not need to be completely ?lled
`up by the WindoW part 9, but instead for only the semicon
`ductor chip 1 and the trough 4 or any other desired partial
`region of the recess 8 to be surrounded or covered by the
`WindoW part 9. Furthermore, the WindoW part 9 can be
`produced in such a Way that it projects beyond the upper
`edge of the recess 8.
`
`[0028] In order to improve the heat dissipation from the
`semiconductor chip 1, it is possible, as shoWn in FIGS. 2a
`and 2b, for the external connections 11 of the chip carrier
`part 2 to be broader than the external connections 12 of the
`connection part 10. Though not shoWn, such a construction
`may also be possible With respect to the embodiments shoWn
`in FIGS. 1a-1c. If necessary (or possible), just one external
`connection 11 or a plurality of external connections 11 can
`be routed out of the encapsulation from the chip carrier part
`2. The same applies to the connection part 10.
`
`[0029] In a method for producing the inventive semicon
`ductor component according to the ?rst exemplary embodi
`ment, it is possible, if the base body 7 is composed of a
`thermoplastic or another temperature-resistant material, for
`the lead frame to be encapsulated With the base body
`material and for the semiconductor chip and the bonding
`Wire to be secured. Furthermore, recess 8 may be ?lled With
`the material of the WindoW part 9.
`
`[0030] The second exemplary embodiment shoWn in
`FIGS. 2a and 2b differs from the ?rst exemplary embodi
`ment only by the fact that the chip carrier part 2 is embedded
`in the base body 7 in such a Way that the bottom Wall 18 of
`the trough 4 projects from the base body on its underside. As
`a result, it is possible to make direct external contact With the
`chip carrier part 2, for example, by bonding or soldering it
`directly to a printed circuit board. Furthermore, in this
`exemplary embodiment the external connections 11 of the
`chip carrier part 2 have a greater Width than the external
`connections 12 of the connection part 10. These measures,
`individually or in combination, ensure improved heat dissi
`pation from the semiconductor chip 1.
`
`[0031] All of the developments and re?nements of the
`semiconductor component according to the invention Which
`have been cited above With regard to the ?rst exemplary
`embodiment can also be realiZed in the case of the second
`exemplary embodiment.
`
`[0032] The third exemplary embodiment according to
`FIG. 3 differs from the previously mentioned ?rst exem
`plary embodiment by the fact that the encapsulation 3 is
`produced completely from a radiation-permeable material,
`for example, a transparent synthetic resin. In this case, too,
`all of the re?nements cited in connection With the ?rst
`exemplary embodiment are conceivable.
`
`[0033] The fourth exemplary embodiment has all of the
`features of the second exemplary embodiment except that
`the encapsulation is produced completely from a transparent
`material.
`
`[0034] The above-described embodiments and exemplary
`embodiments of the semiconductor component according to
`the invention are not just restricted to the use of a radiation
`emitting semiconductor chip 1, but also can be used for
`photodiode, phototransistor and other radiation-receiving
`semiconductor chips. The trough 4 is in this case designed
`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 5
`
`

`
`US 2004/0188790 A1
`
`Sep. 30, 2004
`
`in such a Way that the radiation Which is incident through the
`WindoW part 9 is re?ected in the direction of the semicon
`ductor chip.
`[0035] Although the present invention has been described
`With reference to speci?c embodiments, those of skill in the
`art Will recognize that changes may be made Without depart
`ing from the spirit and scope of the invention as set forth in
`the appended claims.
`
`1-9. Cancel
`10. A semiconductor component Which performs at least
`one of a radiation-emitting function and a radiation-receiv
`ing function, comprising:
`a lead frame having a chip carrier part and a connection
`part;
`
`a semiconductor chip Which performs at least one of a
`radiation-emitting and radiation-receiving function and
`Which is secured on the chip carrier part;
`
`an encapsulation surrounding the semiconductor chip and
`at least a partial region of the chip carrier part;
`said connection part being arranged at a distance from the
`chip carrier part;
`said chip carrier part and said connection part each having
`tWo external connections Which project from the encap
`sulation at opposite sides.
`11. A semiconductor component as claimed in claim 1,
`Wherein said encapsulation further comprises a base body
`having formed a recess therein and a radiation-permeable
`WindoW arranged in the recess and Wherein the semicon
`ductor chip is positioned Within the recess.
`12. A semiconductor component as claimed in claim 2,
`Wherein the recess having inner surfaces Which are coated
`With re?ection-enhancing material.
`13. A semiconductor component as claimed in claim 1,
`Wherein the encapsulation is formed completely of a radia
`tion-permeable material.
`
`*
`
`*
`
`*
`
`*
`
`*
`
`Kingbright Elec. Co. Ltd., Kingbright Corp., SunLED Corp.,
`Kingbright Co. LLC, SunLED Co. LLC and Sunscreen Co. Ltd.
`Exhibit - 1003 Page 6