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`WARNING: The Infarrnafion disclosed herein may be rastncted. Unauthorized diamure may be pmhiIbited ‘
`by Iha Uniled States Code 11112 35 Sections 122 151 and 36!! Fossessian omside the U,5.
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`99 mm
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`File History Report
`
`While copying your file we noticed that there are one or
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`
`1150057545le
`
`
`:
`=
`
`[:91
`United States Patent
`[11] Patent Number:
`5,764,571
`Banks
`
`{45] Date of Patent:
`Jun. 9, 199
`
`[54] ELECTRICALLY ALTERABLE NON-
`VOLATILE MEMORY m1 N-BITS PER
`CELL
`
`WOOOMIQM-
`
`311990 WED.
`OTHER PUBIJCATIONS
`
`[75]
`
`Inventm: Gerald I. links. Fremont. Calif.
`
`[73] Assignee: BTG USA Ibo“ Gully}: Mflk. Pa.
`[2]] App}. 1413:4102”
`['22]
`Fund.-
`Fall. 17, 195
`Edam! U5. Applluflun am
`
`[62] Divisim at s: No. 71,516, km. 4, 1993. Par. mag-1,
`352, Mid: i: : mama arm No. 652.57%. M. s,
`1991. Pat. No. 5.218.569.
`Int. CI.a ....................m...._........_......... 6110 13!”
`[51]
`[52] 0.5. CI. .-_._.........._-...... WIBQJI: 365ll§9.07;
`3651'168: 3651201
`{5E} Field “Search ......................_ 1165118901. 189.07.
`3651168. 201
`
`[56]
`
`Hanna Cited
`83. PATENT DOCUMENTS
`3,660,319
`511972 Pruhmn—mehkwlky .- 3171235 F.
`
`3.801.965
`411974 Kels- et a]
`. MUB R
`4.004.159
`Ill9‘i'? Rli an al. ..
`.......... 301m:
`
`
`4.054.364 1011977 Audi's cl. :1
`. M113 R
`
`..................... 36511“
`4,099,153
`511975 Cdachi .._
`[List nunfinuad on we! page.)
`FOREIGN PATENT DOCUMENTS
`93911404 1011990 away-c. out.
`2 630 574 10115189 Fume .
`W76 711952 Wm .
`WOWQ'IG 911982 WIPO .
`
`M. Bauer at 8].. A MulflfrveJ-Cell 32MB Flash Memory.
`1995 IEEE Intanafiwil Solid—Slate Cimfits Confmnce.
`Susiou 7. Papa TATJ.
`John A. Styli” e1 IL. '17:: {Mace Pmcrnarfor the 321)
`Cowman, 1931 IEEE inmfimnl Semi-Slate CircmiJs
`Confucius. Feb. 1981. :1 116-117.
`Chdslnfh Blcikcr & Ems Melchior. A FourhSm:
`EEPROM Uflng Floating-Gate Memory CdLI. IEEB Jour-
`nal of Solid-Sm: Cirulits. vol. SC—22. No. 3. fun. 1987. at
`260-263.
`12mm! A. fluid & Dm’d A. Hodges. MafliInel Ra:-
`d‘am—Ancms Memory thing (he mam Per Celt. IEEE
`Journal of Solid-Shir: Cicadas. vol. SIC—11. No. 4. Aug.
`1976. at 519-528.
`David A. Rick. A Survey of Mubivabled Menwrirs. EEE
`'n’ansncficns on Cumputm. vol. C—35. No. 2. Feb. 1986. A!
`99406.
`KS. Wiihm a 3].. Nanvalatil: Analog Mammy In MNDS
`Capacimn.
`Electra Dzvice Letters. vol. EDL-l. No.
`3. Ma. 1980. at 42—45.
`Primary mgr—Tun“ W. Furs
`11me Agent. orFMn—Shspfiu and Slupiro
`[57']
`ABS! RACT
`
`An electrically mastic. nomvoluu’l: mulflmmcmory cell
`hurmdaeminedmcmystmmb2ywhmxiu
`baseafufiedetcxminedmmmrsymmmd niunumbu
`orbits slatedpcrodlfiugnmmilg animal] is vaificdhy
`sdeceingnmfmm Sign! owesponiingw thc infumflion
`to be stored Ind cmnpuing a sigual of flu: call with the
`1mm Inference Iiglul.
`
`41 Clahus. 14 Drawing Sheets
`
`mz
`
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`ma
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`
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`
`
`......... 3651135
`365121!
`. 355.185
`
`
`
`
`Page 2
`RM
`US. ”GENT DOCUMENTS
`5/1991
`5.95.940
`311992
`5.095.544
`4.1mm 10mm
`
`5.163.021
`4,139,910 M979
`[319%
`5mm
`131992
`4.149.270
`471979
`
`4.131950
`1.1910
`6741993
`521!.569
`4.192.014
`311980
`5,251.95:
`“11993
`
`4.272.530
`6/1951
`11/1993
`5,252,914
`4.287.571)
`911981
`5.263,!70
`131993
`4.300.210 11/1911
`311994
`5.293.560
`
`4,396,900 1271981
`311994
`5.295.255
`4.327.414
`441982
`
`6!!994
`5.321.555
`4.357.655 1111952
`911994
`5351.210
`4.351.709 M983
`611995
`5.422.845
`4.415.992 1111953
`711995
`5,432,735
`4449.203
`511984
`711995
`5,434,325
`4.452.051
`7/1984
`811995
`5,440,505
`4.495.602
`111935
`an 995
`5.444.656
`4,503.51!
`#1955
`911995
`5.450555
`4.555.241 1211935
`1011995
`5,451,650
`4.573.777
`371955
`1111995
`5.459.334
`4536.163
`411966
`IWIWS
`4.627.017 1211986
`5,475,693
`11']996
`4553.073 M987
`5,415,421
`
`51...... 365116!
`4.651.929
`4419::
`5,497,119
`3/1996
`_........ 3271540
`4,709,350 1111957
`5.506.513
`411996 Mochizufl dd. mu“... 365123103
`4.735.394
`3/1988
`5.505.958
`
`
` 441996 FIa‘udll. .
`.. 365118519
`4.771.404
`911918
`
`5.115.317
`.. 3951427
`511996
`4,799,195
`111959
`5523.972
`.. 365118522
`611996
`4.109224 M959
`5.539.690
`
`. 365I13522
`75996
`4.547.103
`7/1959
`5.541.315
`4.553.192
`3119.19
`m1..._m.. 5551231101
`"”1996
`
`5.544.113
`
`4.590.259 1211939
`811996
`.............. 365ml!
`5.550.772
`4.914.631
`411999
`.................... 365113593
`M996
`5.568.439
`
`4.964.079 1071990
`................_.. 365015
`10(1996
`5.515.512
`4,919,179
`.
`......... 365113533
`1711996
`
`5.594.691
`111997 Bali: m...
`.m............_. 3551'139139
`5,595,527
`5.1121999
`U299? Tamioh at El. ..._................ 36511852
`
`
`
`611991 Wad-l: L.._:..:.....--. 55916:
`
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`U.S. Patent
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`Jun. 9, 1998
`
`Sheet 1 of 14
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`5 764 571
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`US. Patent
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`Jam. 9, 1998
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`us. Patent
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`Jun. 9, 1998
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`Sheet 3 of 14
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`US. Patent
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`Jun. 9, 1993
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`US. Patent
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`Jun. 9, 1998
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`US. Patent
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`Jun. 9, 1993
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`US. Patent
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`Jim. 9, 1998
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`Sheet 8 of 14
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`US. Patent
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`3m. 9, 1998
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`Sheet 9 of 14
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`US. Patent
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`Jun. 9, 1998
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`Jun.9,1998
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`Jun. 9, 1993
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`5.764571
`
`2
`These approaches to n mini-bit ROM commonly have
`one of 2" dill-hens conductivity levels of each mcmsry cell
`being detmined daring the manufad'uring pmccss by
`men: ofnalstomizedmaskflmtis vnlislfuronlyonedaln
`pone-n. Thus. for acting n fillies-em dale infmnation
`pawns.smlnimnmofn difl'etent mnsksncedtobepm-
`dooednnd inocsporawd into umflacflflngprocess. Each
`time- dnuhfosmflonpmmneedstobechangcd anew
`maskmstbe meantime new belchofsmlcmducmr
`wafe-s messed. This thematically increases the time
`bemoan I data. paltem chnnge and the Ivnllahilizy of n
`memnoduaprcgmnmedwithmnt newdcmpenem.
`Price- at electriully altetehle multiple-bit per cefl
`memory approaches state multiple levels of charge on n
`cnpncizive storage element. such as is found in n conven-
`flonzldynnmlcundnmmccssmemnrymm“ ndmge
`coupled device (0CD). Such amenities In described in
`[£5.qu 4.139.910 byAnmflu. US. I’II‘. No. 4.3%.300
`by Tamil. US. Pal. N0. 4.661329 by Anti. US. Pat. No.
`4.109.350 by Nelsegcme. and us. Psi. No. 4371.404 by
`Mun. All of these approaches use volatile storage. the! is.
`the cheese levels are not permanently stared. my pmvide
`3" cilia-mt volntile dlnrgelcvels on I capacitance define 1"
`dlfiuent states msponding to n-bits of data permemy
`call. All ofthese approaches luv: the common chnacteflsfi:
`flint whatever Information is stored on such a mommy cell
`in Volatile become cool: a celllosesiu den Whelscvu' power
`in removed. Mme. these types of may cells must
`be paladin—ally refreshed as they have a tendency to lose
`shame over time even when power is maintained.
`It would be advantageous to devdap a mum-bit semicon-
`ductormunnryeellfinthu flsc non-volatile chunclmisticcef
`n mask
`ruddy-memory (ROM) and the
`electricsuy nimble announce of n mud-bit per cell
`DRAM. 111:5: dasmtedsdcs combined in a. single cell
`would wide a mnlti~bit per cell electrically alter-bio
`non-vdslflemmuymupnblcofstclingflbirs
`ofmwhucTisthe besecfthenumbating system
`being uscdnnd‘h’is the numbwnfbltsiobemcdincsch
`enemy cell. Addilionally. it would be advantageous if the
`EANVM deouibod above was fully compatible with con-
`ventinnnl industry Mummies: prop-nmmnslrnsu's and
`psogmmning‘msing Ilgnrlthms such tint a user can
`unease nuIlfl—hinei-eell memy in smalln-
`identical to that used for ement singiebltpen cell memory
`deflect.
`
`1
`ELECTRICAIJH ALTEWLE NON-
`VOLATEE MEMORY WITH N-BITS PER
`CELL
`
`Cross Reference to Related Amlicnflons
`This Application is I continuation-input of US. patent
`application Scr. No. 081071.816. filed his. 4. 1993 entitled
`"Elecnicnlly Allernblc Non‘Volllile Mums? with N—Bits
`Peril-lemony Cell." new US. Pat. No. 5.394.362. whid: is a
`continuation of {1.5. patent mil-adorn Sen No. ill/652.878.
`filed Feb. 8. 1991 (now US. Pat. No. 5.218.569) entitled
`‘Elcctnicaliy Alla-lb]: Non-Volatile Manon with N-Bis
`For Cell."
`BAMOUND OF THE ENVEN'I‘ION
`1. Field of the Invenfinn
`This invention relates to non-volatile moi-y (NVM)
`devices: uni. me patiwluly. is concerned with an app:-
`rntus and method for psogmnming nnilcr verifying prov
`yawning of a multilevel NVM denies with stable refer-
`ence voltages.
`2. Description of III: Bnckgtollnd An
`In conventional single-bi! pa cell mommy devices. Ill:
`memory cell assumes one oftwo information storage slate-s.
`either an "on" state a an “06" note. This combination of
`either “on" or “DE" defines one bit ofinfotmnfion.As a
`result. a roomy device which em stone n-hits of data
`requires it scpmne many cells.
`Ina-ensingthenundrcrofbilswhlch cnnbestcredinn
`single-hflpm'cellmemu-y deviant-dies Ilpanincteesing the
`numb: of mommy cells on n alleles-one basis will: the
`numbu'ofbitsofdatalohe stated. Mefllodsfuinaeuing
`memofmmyfluinnsinzlememsrydcvicehzve
`relied upon the following advanced mammal-log ted)-
`niquen: Mature larger die which cousin more memory
`cells; or use improved lidtcgtaphy techniques to build
`smallesmesnnxycellsnndnllnwmnrememmycellstohc
`placed in 1 given area on a single chip.
`Al allernnlivemmhtolhe single-bkperoellnppmach
`involves storing multiple-hits of data in a single meaty
`cell. Previous” woodman In implementing maple-bill):
`cell non—volatile memory devices lave only involved meek
`grogrmlnnblerend onlylmnodesfkohlsll’n one office:
`sppmedies. the dime! width audio: length arm melons)!
`all is varied such mntZ“ tfifia’ent nondndlvity vnloes are
`obtained which correspond“: Tdfifu'ull nut: Whali-
`ingbn n-hitsofdnlnwhidlmbcslm'ed cnnlinfllemnty
`cell. In adherappronch. the [on ilnplnntfnrthe threshold
`voltage is vu-icd such flint the macs-y cell will have 2"
`fluent Valuge Ihmshdds (VI) «(Impending to 2" diffi-
`ent conductance levels eta-responding to 2" diil'ezem states
`compendium n-bitsddnnwhich an be stated one
`single memory cell Bangles ofmemmy devices nEtlsesc
`types ale nescdbedln US. Pet. No. 4.192.014 by Crayon-m.
`Us. Pat. No. 4.586.163 by mike. US. Pat. No. 4237570
`by Stark. US. Pat. No. 1621424- by'Wu. Ind us. Pat. No.
`4.847.803 by Km.
`Single-hit per cell rend-only-memy devices use only
`nqninedm sense. ornud. mo Muesli levels or states pu-
`cell. consequently they have need for only one voltage
`reference. Sensing schemes fa: mlfldcvnlmemmy devices
`are more oomph and. who 2‘-1 volunt- mm.
`Ennmplcl on such multiple state sensingsm for 30145
`no desqibetl in us. Put. No. 4,449,203 byAnlhnch. [1.5.
`Pat. No. 4.495.602by Shepml. U5. Pet. No. 4.503.573 by
`Iwnhnsi'si. and US. Pa. No. 4.653323 by Suzuki.
`
`10
`
`[S
`
`15
`
`5a
`
`55
`
`63
`
`E!
`
`WY OF THE INVENTION
`
`The present inversion PDVldeS l. Milli-level electrically
`site-able non-volatile menu-y (EANVM) devia. who-ell:
`manilofthe s‘lctngelccefions hnve monetitnntwo
`dismal states.
`In a specific embodiment. die unseat invention peovides
`a mum-level musty device The peasant mum-level
`memory device includes 1 mold-level cell means for storing
`inputinfmntinnfornnindefitfllepuind oftimensn
`discrete Me of the mold-level cell means. The mfiievel
`cellmesmstorcsinfumnlion in mestnteawheteli
`unbaJoofnp-edeteminednnndaermnisnnumbu
`of his stored per cell. and K52. The meson: mold-level
`mum-y device also includes n
`cell Hamming
`mfmpommgthemfivlevelceflmton stale
`conesponding so thcinputinfcmmion. Aocmpnrnmr means
`hempuingthemcnuymcfmemulfl-levelcell
`means mmeinputinfmflon is also included'l‘neinpnn
`infatuation corresponds to one of n plurality of Inference
`
`
`
`Page 23 of 235
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`PETITIONER'S EXHIBIT 1002
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`Page 23 of 235
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`PETITIONER'S EXHIBIT 1002
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`

`

`‘
`4
`1:16.13 is a timing dhyun mutating me voltage
`duemnldnfaz-bitpucfliEANVM dndnltlptw
`verify cyde using vu'iablevddthprogem pulses.
`FIG.ldis-fimingdlnpamfllustzafingmebitfincvultngc
`ufttbiapacflmdufingtprogmmhefifyptoccss
`which umverlnhk magnum palm.
`DBSHLIFI‘ION OF THE PREFERRED
`mm
`
`5,764,571
`
`5
`
`10
`
`40
`
`3
`vnluges. The present companion- mems Ma generates a
`00:1ou signal Infinitive offllcmmcny Me I: wake
`the input him-maxim,
`All Ina-native specific embodimnt thopmfideaa Imm—
`level memmy device. The Fem mum-level memory
`device includes a mum-level cell mm for Gluing input
`Mmafionfunnindefinfiepedoddfim as adimete mu:
`affine multivlwel cell mem'me mum-level cell manna
`stores WonkammymmwbucKisubfie
`ofapteddcnninodnflmbusyxtmnisnnumbuofm
`mefllmhemadeindeuflinmespedflc
`storedpercell.nndK">2. Amoryeell WE
`CW! afthe invent-tun. exlmptlea ofwhiclt zefllus-
`master manning the mum-level cell mansion stun:
`Win mewmpmyingch'awings. While the invenfiau
`unrespondhgtothehwthfmnuflonhnlw indudei'l‘he
`wiil he unedited in conjunction with the tpecifie
`present mum-level may define filtlhar include: I cum-
`whammflwfllheunmmodmmMmm
`puamrmunsfucompaflngflnnnmorymofme
`Intendedtolimitflne invenflontomosecmhodimmts.0nlhe
`mmfivlevel eellmnswiththeimut infa-matiun'l‘heml
`county. the invention is intended tn cover VII-ions
`infcnnaflon
`dsto unedullnrnlityaftetmme
`WWI. mudiflufims and equtvnlentt. which my be
`volt-gee. The ptesent comm meens firmer seen-lea a
`included width the spirit and scope ofthc invention as
`mum)! nignllinflufivcoflhemmoq‘ “=qu
`deflnodbytheqapended claim
`the input [n.fmflion. A refuenoe volsege menus fur defin-
`In 5:1!an flu: invention dum'bed hm: mow: n-hits of
`ing die plurality oftefm valleys in also helnded. The
`infmmnflmtnbeaareé onandteuifmmmmeetrieeuy
`present reference voltage mm! is ope-ably coupled to the
`campnawr means.
`Mutable Non-Volatile Men-my (BANVM). This is accom-
`plishedbydemicnlly vaninsthceonducfimy ofthe chun-
`BRIEF DESCRIPTION OF'I‘EE DRAWINGS
`ndcinfloathggficmmbewflhinnnyoucotffl"
`The “myth; drawings, which atW ill
`conductivity ranges where "K" represents the base of the
`nndfonnapafl offllisspcdficnfion.fllumie embndimcnjs
`mbminglystembulugewlcyedfinnbiuysysxem.“x"
`offininvenflonandJagefin‘wififllcdflaiflicmmm
`equek Z). The conductivity range is then named and
`exphinthcrrindplauf thcinvelnion:
`mmmmwkfimn-bitmm
`FIG. 1 hegemdcmmaficmmescnufinndanon-
`can. The Hunting we PET conductivity is electrically
`vohflkflofiug gntemcmm‘ycdl.
`modifiedbyulinsexmdmmming hxdwarennti
`algorithm: which supfiy signals Illd voltages to the
`mammal-mnnpfiummewmy
`system.
`EANVM memory duties.
`Flaaisnn'mingdingzmofthevmugGMMtfl
`Time external signal: Ind valuges are then modified
`intend to the device to [swine In (mi-anally controlled
`mummyemperceumtlymbdugpo-
`medfitomumsod“l”statememmned“o“.
`Wary cycle whim inzemenmly stem electron:
`on the flailing gum until 31: dunked Donducdvity range is
`liltidisuimingdiaymuflhebklinevomgeahma
`ndtieveéfiu-themd‘iflmfldommemulpumfl
`singbfitpumfiflANVMdlinglrudnpmMIt
`flusttues wwefmn levels fut boa: the wanted and
`Wentwfllusnmeabimsystemwmdme-fln
`erasedmnditions.
`pet may all
`FIG.§isubIockdingtamenanarymy
`I. PRIORARI’SB’XMBH EANVM DEVICE
`implanentingemnlfi-hitperceliflnm sylficm.
`FIG.élsabtoekd£mfmrendmgnmuIfi-Htpewetl
`Fullisngenednsdtematicseyesmaflon ofanon.
`EANVM syrlcm.
`valnilefloltiugmmmnmyoefllthhnmimendedmu
`thinehemntiedawingisinnnywnyindicfiveaftbemioe
`Fifi'llhem'slhelflllinevohncsdlfingnrudcydaasn
`manhundtomumncwefuflhnthis invention
`filnc‘flnnoffitucfuIIZ-bitpu’ccllEANVM‘whidlhubecn
`FEW no on: of four palsihll: m (0. 0)- (l- 9).
`mmummudlwhifltmsmelectfiwfly
`(0.1) and the fully med condition (1.1). Pow sewn:
`isolatetLrnflmting. gate “(Dem charged gametes for the
`mirage levels uempresentedon thin 11m emhrqnlcat-
`maintain; line volugefireihuldmdhanoe channel
`insane of maimpossiblcmteuOnly one ofthese would
`weduetivityufhel’fll‘memrymfllfl.
`bemtfotuygivenmdopenflnn.
`WFEImemuycdlllinfludunwatdg-Izuwhiph
`FIG.Bisabhckdhy-Imafamulfi—bflpuudlsymm
`kittedeflhu'toaclecuhemyceflformdinguiwwd
`oomblningpnmmfvefifymdmdtimlifly.
`toenuneeledmnlmbeinjeetedonlothefloafingpteu
`FIGJisetimlngdinpemfc-‘m‘wlngeflmstuldfon
`mningthepwgnmminglmcewfimflng We Nisan
`Z—bitpet cell EANVMbeingpopmmedfiumnfnuy
`electtienllyisolatedmumwhkhmnindefinltely 5mm
`M(l.l)mwoneoffllemhfllhmepcnlflzhm
`Whmmmuebmfldectnmmflmfing
`FIG. 10 is a timing diagramwhich Illustrated momma:
`mfllkuiflicvohgethtuhdduffltemyedllfi
`Wudnzhhwedlmhlbehgmfiml
`Induanmhaha'nheeundunivityofixschmnelmgion.
`hillylrogammedw.0)mwomdtheotnetmee
`Adintcdon lfidlhcmhmupkdtullownxion
`posstbtemm.
`lflbyndunndmsinnfl.Whmtheflnningglte l4i:fi1fly
`uttsednndmeoonndgemnnubeenselmmedtmd
`F561] unfimingdhyamfllflmfingfltevflnge
`thteflmldclel—Htpuceumueminllmn'
`regimlfllsindmfimy“on',othi¢heundunttvity.w.
`Whentheflaeflngutte Milfifllypmmmmedmedlunei
`via-if} cycle using fixed width wmpuffls.
`FlGJZinfimingdhgnm
`mummmwmm: 5, radon {Ohmfliefunywmslaw conflictiflty state.
`aflznnpumnEANVMdmingnpmmmNefifi-prwen
`Fifizianblockdhgmofapdntmmveufinnal
`whichusesfixeduddfltmgmnpukes.
`Mmmmwmflmhemysyflm
`
`43
`
`50
`
`55
`
`R1
`
`Page 24 of 235
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`PETITIONER'S EXHIBIT 1002
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`Page 24 of 235
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`PETITIONER'S EXHIBIT 1002
`
`

`

`5364571
`
`6
`5
`shown a: Minglesignalandwhichmbofi: muoflodby
`fistucsasingkhfiofinfomflioninanfim mun
`flan PGWWfite small. The memory cell is being pro—
`mcufluudesuibedinfl .1.iss'elededfnr§uding
`"0" m pa; mg duminn of the Writ:
`oumrol galemminflad‘ Ammimasmmem
`ofmecal]anunnamedtoimmune gramme-axial 5 puke.thebitandwadlinemamvalues‘ma:non!
`Aflnmnflsfllsmmednfiflmdlappfl-updzmefl
`not be the sine. m “59¢“;de 199M to the some:
`wavmvwfl-wfl-wmflummflmfifi mnnmdmmbiznneasummemoigmsaame
`mememfiM-finflwumflflwm manmycdlSZAsemonsueinjectednmmcflmfing
`"xv-hmmcchmndufthcfim‘um 3 km mnducuvnym't
`EW- 1h: Yolk-BC mm,“ 0" tin mm as]! begins m
`highW” ”‘3 ”“3““va “W35’5 10 inn-um. Once the volmge Wold has been increased
`fled-up to the voltage [ml Vpull—up on was! 4'!-
`beyondnpodficdncsholdvalueMindlmwdbythedashed
`Whenmcecllzzsmesafl'mmtechmnclnfflnefifll‘iu mmmmmxymunispmyumdmnw’
`in a high conductivity. «low impedance. sun: so an: m: mm
`Wm“ =1min“”*5WW““5'a“ W“1”“
`NaemuVowlmumahcim waning can alsobe used
`H2! at twin]3‘
`_
`15 mm!- of hot damn Injection to plus cinema: on me
`Forte-dmsmwfluenfflmmfivhmmdmmwdln
`floating 3mmmfifl-bfimmldsmdcmibedhm
`nscnsoamp
`ummpaltamev maintain-13$
`fimfimamdfiflmmcfli
`technique-
`wimuefuanccvomchmfuuL-minda.En‘Wissmmd
`Prim-“W‘s“WNW“”can“
`onthnflhbl'mocnflxhemflwfllbehuluwmm
`“Farmimfiflsmtowm‘MWk
`smemduamndtthnvohagnaeminflfliaabwem zu eellwith Ismudimlrsiflupossibku “M Mime“
`refmncevoiusw
`43ml"°”mimh=°=fl
`possible.Fonslngle—hilmunm¥cfll,marfilnudcfincdas
`31mm»:
`“dmewuelwfllfidflmnbc mum-whom:
`shutdnncdudtommemm
`ahw wing:whlfll willbCfl'lllunlflfldthoughanamp“!
`Gen-mem m SIN "1“:oval-m
`www.memnialnthighwndudmymnd
`upmfiomlnmlsunmpmpdottofimcflflaebitflnei:
`asuesultmagohgeuwmdzsh nelowthe«fame: M04 in me “pm.“ condition. Note. that it i, a!”
`““585nmunalflflrhc Waffle5"!”mullet£2
`ponihlethatlb:hitEn:maysun:1anyutluvalmgelcvd
`wfllpethishvoimwgiewmbcmwwmm pflmtofimcn.Atlhuefl.th¢EANVMcdlflissdemd
`Wmmlwifll 1-_
`.
`,
`”Mimeceflzflisinlhemwdmfiltmu.mudlaz
`medfingflmvalneotmmfmhmbttmedhfiw Wilawflnpodanccpmtufioun¢mnuultfllebk
`oellfljtismnmdhtmceeflalhilm Warmly finagpumdgwnmnmmgrwndwfidpmvfidn
`“on“. sun: Which 0mm!” m I Wu} “9-11“ 170 Wuumanmmmudmwuemmw'
`muuwmwmmumfldnmg mfuflymmmedstfldmhflflnedupwmfldmmdn
`hmuszmowstdminputhmwfiufifl :5 umvwnmwm mumumevamgeonm
`mate-nmsblemssi: Wlflofnxw“ fit-finemflnflflndlhenfummvdmgc‘frdutwml-
`voltagesmtdl$.mpngrmwmp'swm“provide!
`ml43amWhythecompanion-42.who»buficml
`aha-memmwlmsewnwflhwflcmw‘w outputdflmllOmminilfl.WImeisg1-utflmme
`terminalSS-Annfllfi unwanmmmwtm munevotuge.mcoutpnonmmimlniulog1u1
`finghwhnwmw‘g-Tomafmfizfl ”I
`onIIOmnlnflSOull
`“1"0".
`mmvomgemmhflfianmuomlmofmmdfl
`“WORYARRAYFORAW‘BE
`0
`1.WMII
`' "'an main
`Met 52 and when m: prom-In: voitag: 1w
`5‘ is
`WVMSYSIEM
`acfivmwipoymwnmlflsflfimam: 45
`FIG.5hnuockdiagrmof-mnlIi-bupdcellmm
`pregampubefl.ud‘medby:PGthmdyfl.me
`symlflwlfidflndudesmklxfimayofmmmeens.
`volhgeswilzhfipmfldfimumm
`Theoennnne
`anymusaflomngngEIm
`Vpp mnminllbfltothewnnolgn:
`«Elba WMJOIISdudemmmctbnm 0111a:
`Walla: memvolupu
`“$0me my uses similn:
`singmamas. martial can
`shaman):
`«unwaw
`sigma-ndmcnuflmnsmmadwim
`yflulnhl:
`betweenfitonnmsmnddwpleuffiw
`calla":
`singk bit pelt W W and: Is EPRDM
`firepognmvoltachppdypic-Wuvdmummese
`EEPROM
`we mmmsdgnalsn
`
`whichewesponastu‘v mwm“1"an ofmmmmiscummdmapfll-updcvkquhdinud
`‘mnlnflflfromdxeouwdlhemmindalfinfiuslmd
`by nu: block 105. All of the. control mm of a raw m
`wmwmfiwiimbmfldpdumflkdflm so mudwarwmmawmumtypkflyshawnns
`lowmmamsisinhihfiedmmfiflusm lukwsuesdeaedwithamwsfladchummnmd
`mama
`Muemwdodmflucolumnnledc'wfitnlkns:
`
`Page 25 of 235
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`PETITIONER'S EXHIBIT 1002
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`Page 25 of 235
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`PETITIONER'S EXHIBIT 1002
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`

`

`5,764,571
`
`7
`A significant tenure ofthis n—il'i pa' cell system 10! as
`compared to s single-bit per cell irnpiernenmion is the: lire
`mommydenskyisincrwednynfmuros’mwhmnlsme
`munber of him which can be stored on an individual muin‘
`Htmmytefl.
`EL BASIC READ MODE OF AN N—BII‘
`MEMORY CELL
`FlG.6:huwsabinxrysynlem|50fu'renfingd1esmecf
`snn—hirfiouinggnremnmayodilllz.asdem-ibedin
`eonnecn‘onwr‘lh HG. L according In to: invention. when n
`isdremmberofhimsloredinflaemmoryrellmrihis
`aluminnisseHDZIndoneuffom'smsofflrememy
`cell must be detected. The four posslhlr: rules being. {0.0).
`(0.1). (1.0). or (1.1L Detecting which mm: is programmed
`requires a 3-level sense Inwlifier 152. This mung-
`lnolndesthree sense amplifies 15a. 1515 15! each ofwhidr
`have meirnegnfiwinpmminalscohneduilnflieompm
`temlnallsaofmememnryoeflln. Sensemplifium
`hasnrefaenoevnlugekefseonnecledroiuposhiveinpm
`terminal. Sense ImplifiQ'ISShns nreflsenoe «$.ch:
`connemdmfisposiflveinpultanrrlnnlfienronnpfil‘ulfi
`hssareferenoevolmgefieflconnected toflepodliveinput
`terminal. The voltage rd’ereneer are set sud: as follows:
`Vpnfl-upfiebeRef L'l'bereepsdlvemnprlsignals
`53.51Slutfl1elh1eenensenmpflflmdrivennenmdelogic
`circuit 19. whichenoodes the sensed stink S3. 52. SI inln
`soapy-opium 2-tn't hufuanBltGlsprovidedalsnI/O
`Hamil“ andllil 11's Fwidedltm FOEu'minal 164A
`mnh nhle fee the encode logic druid! 160 is I: follows:
`
`
`
` s: s2 51 no 1
`no 0
`5m
`
`[-
`r.
`I.
`o
`a
`(on)
`is
`r.
`r.
`1
`o
`(1.6)
`H
`n
`r.
`o
`1
`(0.1)
`
`1lHI!a (1.3)
`
`
`
`
`
`Dudngnmdopenflmofun-hfimu‘yeflLme
`levelsolflherespedivecillpmnlgnalsSilaflofmeseue
`amplifiers 1K.156.]58md£lermiledbylheeondndivity
`mnemwhiohlhememnryoeuhndbeenretduinga
`Wm operation. Afnlly enrol EANVM wil 102
`wfllbeiails leweslflueaholdvohagemorme highest
`conductivity slate. Consequently. I“ of the reference vols-
`ageswillbelriglmmanflaehifiinevamgeatuminal I“.
`reunhinglnauJ) smemfullypmmmmedEANVMoell
`1|: wilihe inilshiglml dareshold vdhaeMnrit-lawerr
`oondncdviry stare. Cnuequemly. Ill whence winger wm
`belowenhmlhehirlinevolflzelllaminrl “trimming
`in n(0.0)sme.’l‘heinteunaedintelln'en1add Mel Ire
`encodedulsfllnrmdinlhemmhiefortho lodecirarlt
`1611316.? showsfllehflflnewlugexnfirnaionofmne
`titer-mini “admins.- relicycleanbinuyZ-filper
`mowed]. Forpnrpmerutlllmhfinmewhnfflrefcm
`possible waveforms memoir-rubella: fowponiflepo
`pmnedm anhernemoryoellrre:ahown.Durtngu-esd
`cycleooiy cheerefor-meormpandlnmome pug-med
`rme ofrhe EANVMcellwould occur. For «ample. "some
`theEANVM umeellllzhuheenprogrammedton
`(L0) state. Hinze time :1. because the BMW]! cell 102
`M5 um yer been selected or wdvnled. the bit line i“ is
`wiled-uptonnflhpmfimettheEAchollls
`selouodlrsing mnenfinnalmmu'yoddressdeoodingtech-
`niquunecnmetheWMceflhasmenpmgmmodm
`n spoefic conductivity level by Ike din-gr on lhe flown;
`gnleJhe hilheispulleddownmaapedfievoltngclevel
`
`10
`
`I!
`
`25
`
`45
`
`50
`
`8
`cmespondingmtheunountnfum‘emdm mecellcans'urk
`amisspedflcoonduefivitylevelMeulhispdmisreaehed
`at time t2 fine bit line voltage stabilizes at a voltage level
`Vrefll between reference volwgos Ref 3 and Ref 2 which
`mil to n (1.0) state. When the EANVM can 102 is
`deselected. lhn bi: line voluge will return to its pulled-rip
`dominion. Similarly. the bit‘llne vollnge stabilizes ntVrefz
`fartheml stair: fmor ntzemvolls for the 1.1 stale. Fle. B
`isnbloekfiilgnmofann-bfitmemuryaenrystanmJ’or
`purposes oi ammnm a tinny Milt per cell system is
`shown. Howe-m. the concept: of the invention extend to
`systemswherenisyenrermenlnisnlsoinlendedrhnnhe
`invention include any rysnnrn when the m memory
`mflhummMWomForawnploduanon-binny
`symmmomnmymcmbeiln'eeummeocher
`mulflpleofsnon-blnuy system. Someofthecomponents of
`this system 2“ are drawn and desodbed will:
`the same
`referennenmnlsfus the components ofHG. Efm metered
`mode of operation. It is intended that Ihene same reference
`autumn identify the snare components. The system one
`inolnduamemymfllnu desaibedinFlG. LWlEhl
`bltlineolrtpmmrnlnnilflfl.Flrmere-dmodeofopalfion.
`s 3-level sense amplifier [52 will: read reference voltages
`Ref].Ref2.andRel3 nndnnenoodea’lfiflspm‘ideikeed
`danismvideduanllmteanlnsllfizendatanhl yo
`tunninallfil‘u‘flrewrflemodeofupeulion.nvefify
`referewe wince select circuit :22 provides an analog
`voltngnefiereneelevelxlgraleaneinpuuemlnalofen
`mains compare“! 202.111: verify reference winger Ire
`chosensnfiuussoonuthehitlinevolhgeonbfilineiflfi
`is greets than the verify referenoe voltage the flareshold of
`LheEANVMoell 1021's selmtheproperthresholdcmev
`spammmememmy sletetowhichitistobepm-
`1b Ibis end lire Verify Mueller. vullnges Vrefl1
`VrflVrefiJnerrefilnrenetsudrflm‘IrefiisnboveRef
`nmumeenmaandnnzmnnmmm
`IdeefLdeeflisbelowRofLDmingnnomslmd
`operation. Ere billion voltagewillsetdn midway between file
`read reiuenee voltages to insure our the memory room
`will bexeul my. no verify reference voltage select
`clrenit 22.: is controlled by the Z-wlgu: hits from a Z-hit
`input lntdrlbrrlfer drum 2‘“. which receives binary input
`unfinmmefiotlmimln 161 and 164.1‘heYsignlinpul
`tuninnlofthesnelogoompmtqmisoonneeledlomehil
`lineonlpmurnfimllfisrfmemnlfivlevelmflnntycefllfl.
`The culprit signal fromihe analogmain is provided on
`Inignllinemuuenshle'diuhlesigmlfmflrepropm
`voltage switch us. An ompui signal line nos from the
`Fog-am volhge swim: mummies the was! line grown
`memmcmndmdmemmmnlnuum:
`output sigmllinn res magnum: neon line Infiltavldes
`the his-linemnnrmgvdagemmebit-limtumlml 168
`MEANVMcdilnAMamamlvuifyfirningch-mi!
`M is enabled by I Write Sign] [xevided on sign!
`line znm-mlwmmnmnc timing circuil
`morofidesasu-ieoofprognmlverifyzhninggrlseslome
`mvflngeswitchfllonnignal line2‘10.'l‘hepulse
`widfllsmeeflocomulflremamingpueesssoihnlfiie
`Voltage threshold affine EANVM no]! 102 is incrementally
`mixed by controlling the injection of change onto lhe
`floofithrenflheEANVMoellJIehpmsrmmlngcyde
`inauses theWe threshold and. as sresnlr. decreases lhe
`conductance of the my cell In. Afiz each lnlnsnal
`quehomplueuinniuedbysignalilnezw
`going “high“. the mum voltages are Wed via the
`ngrsmVnhngeSwltdIZZOmdavu-ifycydebeginsJThe
`vulngerlrerholzlofmemcsyoell ilZislbendece-rminedhy
`
`Page 26 of 235
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`PETITIONER'S EXHIBIT 1002
`
`Page 26 of 235
`
`PETITIONER'S EXHIBIT 1002
`
`

`

`10
`9
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`umbymbiuchctchip
`fine vomeexceeds Elm suppliedbythemfiy reference
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`W to beM on the mm m=11 1.3 is m mmpuflnwmewmmwhflwflflmm
`-
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`Imam"b? u“ “4°;“Wmflfif:fl'fii
`voltageMahalausIs mews!bythewavefmm:labelled
`we:22401521.1.135me(“110.1thin“5535.1
`FIG.11i:atimingdiesnmwhichmmhowaZ—b'n
`mwemalts:Win!anisuken dhectlymdmebit 15 WflEOEHGI“FormmmmenseduJ)
`finemmlnfl1mm»:mmS—levdsmm‘enmdedmfits
`stub: w I (1.0) M» was “I: mm: W m to
`151. 160.andrefs-ewevoltageselect circuit222.mybe
`new!“fixedEmmi!finial;pulses.Mawlog“:[ml5m:
`completely meagendem. es indicated: in the dnwlng.
`6ftjw Write ligand on 513ml 11m: 212 m”? I“:
`Alumnivahuheymaybeuouphdtngmutodmfid? magmcuilmm'henmbleduemeunbemmg
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