10/19/2004 TUE 18:13 FAX 781 271 1527 KURT RAUSCHENBACH
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`
`
`J
`l n
`t? C;:N"€ER
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`OCT 11.9 2004
`
`PATENT
`_ Attorney Docket No: ZON-OOB
`
`010/027
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL N0;
`
`10/065,739
`
`GROUP NO.:
`
`1753
`
`FILING DATE:
`TITLE:
`
`EXAMINER:
`November 14, 2002
`HIGH DEPOSITION RATE SPUTTERING
`
`McDonald, Rodney G.
`
`Commissioner for Patents
`
`Alexandria, Virginia 22313-1450
`
`Sir:
`
`AMENDMENT AND RESPONSE
`
`The following amendments and remarks are responsive to the Office Action mailed on
`
`May 20, 2004 in the above-identified patent application. Entry and consideratiou of the
`
`renewing amendments and remarks, and allowance of the claims, as presented, are respectfully
`requested. A Petition for a two—month extension of time, up to and including October 20, 2004
`is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`
`additional claims fee, and any other proper fees to Attorney's Deposit Account No. 501211.
`
`'
`
`Please now that a Supplemental lnf‘onnation Disclosure Statement was filed for this case
`on July 2} 2004 citing references found in an Intemational Search Report for the corresponding
`PCT application.
`
`Please enter the f0110wing amendments and censider the remarks that follow.
`
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`TSMC et al. v. Zond, Inc.
`GILLETTE-1.013
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`Page 1 of 18
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`TSMC et al. v. Zond, Inc.
`GILLETTE-1013
`Page 1 of 18
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`10/19/2004 TUE 18:13 FAX 781 271 1527 KURT RQLTSCHENBACH
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`I011/027
`
`Amendment and Re3p0nsc
`Applicant: Chistyakov
`Serial No.: 10/065,739
`Page 2 of 18
`
`Amendments to the Claims:
`
`Please amend claims 1, 4, 5. 6, 8, 12, '16, 19, 20, 21, 25, and 27-30, cancel claims 3 and
`
`18 without prejudice, and add claims 31-42 as follows.
`
`1.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly-ionized plasma from a feed gas pmxirnate to
`
`the anode and the cathode assembly; and
`
`a power supply that generates a voltage pulse that-preduees-an-eleetriefieid—behmen the
`
`, ,,
`
`anode and the cathode assen‘lblyrtheeleetrie—field that creatg ing a strongly-ionized
`
`plasma from the weakly-ionized plasma, an amplitude and a rise time of the voltage pulse
`
`being chosen to increase thestrongly—ieflizedplasma-eemprisiag—a—veiume-a dcnsny of
`ions in the strongly—ionized plasma that—impaet—flae—sputfltefing—target—Whieh-enough to
`
`generate sufficient thermal energy in the sputtering target to cause a Sputtering yield 9&3
`
`the—sputterhag—target to be non-linearly related to a temperature of the sputtering target.
`
`2.
`
`(on‘ginal) The Sputtering scarce of claim 1 wherein the electric field comprises a quasi—
`
`3.
`
`4.
`
`static electric field.
`
`(cancelled).
`
`(currently amended) The sputtering source of claim 3 1 further comprising a gas flow
`
`controllerWWW that controls a flow of the feed gas so that the
`
`feed gas diffuses dieWWMHWWieQ—pflse
`
`WWW—3W strongly-innized plasma”-
`
`
`
`5.
`
`(currently amended) The sputtering source of claim 3 4 wherein fietlaeeeemprisiag—a—gas
`
`the feed gas allows additional power to be absorbed by the siren gly ionized plasma,
`
`thereby generating additional thermal energy in the Sputten'ng target—exchangemeans—fea
`
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`GILLETTE-1013 I Page 2 of 18
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`GILLETTE-1013 / Page 2 of 18
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`10/18/2004 TUE 18:14 FAX 781 271 1527 KURT RAUSCHENBACH
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`.012/027
`
`Amendment and Response
`Applicant: Chistyakov ‘
`Serial No.: 10/065,739
`Page 3 0f 18
`
`
`
`6.
`
`(currently amended) The Sputtering source of claim 1 wherein the thermal energy
`
`generated bydae—first—piurelityofions—that-impaet-Ln the Sputtering target does not
`
`substantially increase an average temperature of the sputtering target.
`
`7.
`
`(original) The sputtering source of claim 1 further comprising a magnet that is positioned
`
`to generate a magnetic field proximate to the weakly-ionized plasma, the magnetic field
`
`Substantially trapping electrons in the weakly-ionized plaSma proximate to the Sputtering
`
`target.
`
`8.
`
`(currently amended) The sputtering source of claim 1 wherein the voltage pulse
`
`generated between the anode and the cathode assembly—electiiea-l—field—aerGSS—the—weelely—
`ionized—elm excites atoms in the weakly—ionized plasma and generates secondary
`
`I
`
`electrons from the cathode assembly, the secondary electrons ionizing the excited atoms,
`
`thereby creating the strongly-ionized plasma.
`
`9.
`
`(original) The sputtering source 'of claim l wherein the power supply generates a
`
`n
`
`Constant power.
`
`10.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant voltage.
`
`ll.
`
`(original) The sputtering source of claim 1 wherein the ionization source is chosen from
`
`the group comprising an electrode coupled to a DC power supply, an electrode coupled to
`
`. an AC power supply, a UV source, an X-ray source, an electmn beam source, an ion
`
`beam source, an inductively coupled plasma source, a eapaoitively coupled plasma
`
`source. and a microwave plasma source.
`
`12.
`
`(currently amended) The sputtering source of claim 1 wherein a rise time of the Glee-Ede
`
`field voltage pulse is chosen to increase an ionization rate of the strongly-ionized plasma.
`
`13.
`
`(original) The sputtering source of claim 1 wherein the weakly-ionized plaSma reduCes
`
`the probability of developing an electrical breakdown condition between the anode and
`
`the cathode assembly.
`
`14.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
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`GILLETTE-1013 / Page 3 of 18
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`10/19/2004 TUE 18:14 FAX 781 271 1527 KURT RAUSCHENBACH
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`@013/027
`
`Amendment and Response
`Applicant: Chislyakov
`Serial No.: 10/065,739
`Page 4 of 18
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`substantially uniform proximate to the cathode assembly.
`
`15.
`
`(original) The sputtering source of claim 1 wherein a distance between the anode and the
`
`cathode assembly is chosen to increase an ionization rate of strongly-ionized plasma.
`
`16.
`
`(currently amended) A method for high deposition rate sputtering, the method
`
`comprising:
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a cathode aSSembly
`
`that comprises a sputtering target; and
`
`applying a voltage 13.ulse to the cathode assembly tp generate generating a strongly—
`
`ionized plasma from the weakly—ionized plasma, an amplitude and a rise time of the
`
`voltag0 pulse being choéen so that ions in the strongly-ionized plasma comprising—a
`
`.1‘1. F'--"l"
`
`.
`
`;]
`
`Wfiw Mth—the-pl-wa-hty—efiens te—generate Sufficient thermal
`
`energy in the Sputtering target to cause a sputtering yield otlthe—spurtephag—tai-gee to be
`
`non—linearl y related to a temperature of the sputtering target, thereby increasing a
`
`deposition rate of the sputtering.
`
`17.
`
`(original) The method of claim 16 further comprising generating a magnetic field
`
`proximate to the sputtering target, the magnetic field trapping electrons proximate to the '
`
`sputtering target.
`
`18.
`
`(cancelled).
`
`19.
`
`(currently amended) The method of claim +8 fl wherein the eleetrie—fielé voltage pulse
`
`applied to the cathode assembly generates excited atoms in the weakly—ionized plasma
`
`and generates secondary electrons from the sputtering target, the secondary electmns
`
`ionizing the excited atoms, thereby creating the strongly-ionized plasma.
`
`20.
`
`(currently amended) The method of claim 16 further comprising eaeehangi-n-g—a—veleme-of
`
`diffusing the weakly—ionized plasma with a volume of the feed gas while ionizing the
`
`volume of the feed gas to create an additional volume-elltlaie-weakly-ionizcd plamna.
`
`21.
`
`(currently amended) The method of claim 16 Further comprising exchanging—Meet
`
`diffusing the strengly—ionized plasma with a volume of the feed gas while applying the
`
`PAGE 13m " RCVD AT 10119l2004 6:29:28 PM [Eastern Daylight Time]* SVRiUSPTO-EFXRF-flll * DNIS:8?29306 " CSID:781 271 152?" DURATION (mm-ss):09-00
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`GILLETTE-1013 I Page 4 of 18
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`GILLETTE-1013 / Page 4 of 18
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`10/19/2004 TUE 18:14 FAX 781 271 1527 KURT RAUSCHENBACH
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`.014/027
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,739
`Page 5 of 18
`
`‘
`
`voltage pulse to the cathode assemblyrgener-ating to generate an additional comer—the
`
`strongly-inni zed plasma from the volume of the feed gas.
`
`22.
`
`(original) The method of claim 16 wherein the peak plasma density of the weakly-
`
`ionized plasma is less than about 1012 0111').
`
`23.
`
`(original) The method of claim 16 wherein the weakly-ionized plasma reduces the
`
`probability of developing an electrical breakdown condition.
`
`24.
`
`(original) The method of claim 16 wherein the ionizing the Feed gas comprises exposing
`
`the feed gas to one of a static electric field, an AC electric field, a quasi-static electric
`
`.
`
`field, a pulsed electric field, UV radiation, X—ray radiation, an electron beam, and an ion
`
`beam.
`
`25.
`
`(currently amended) The method of“ claim 16 wherein the impaetmg-thefiautteang—eatget
`
`with—the—pluaal—ityef ions in the strongly-ionized plasma causes at least a portion of a
`
`surface layer of the sputtering target to evaporate.
`
`26.
`
`(original) The method of claim 16 wherein the peak plasma density of the strongly-
`
`ionized plasma is greater than about 10‘2 cm'3.
`
`27.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly—ionized plasma from a feed gas flame—first
`
`velame—ofi‘eed—gas—that—is-loeated proximate to the anode and the cathode assembly;
`
`a power supply that generates a 'voltage pulse diatprednees—an—eloetfiafield between the
`
`anode and the cathode assembly that creates a strongly-ionized plasma from the weakly—
`
`ionized plasma, an amplitude and a rise time of the voltage pulse being chosen to increase
`
`- a density of ions in the strongly-ionized plasma enough to generate sufficient thermal
`
`ener
`
`in the s utter-in tar et to cause a s utter-in
`
`ield to be non-linearl
`
`related to a
`
`temperature of the sputtering target eemprrsmg—a—fisst—plnral-n—y—ehens; and
`
`a gas controller for-exehaag-ing that controls a flow of the feed gas to the strongly—ionized
`
`plasma to facilitate the creation of additional innsWWW
`
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`GILLETTE-1013 / Page 5 of 18
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`10/19/2004 TUE 18:15VFAX 781 271 1527 KURT RAUSCHENBACH
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`.015/027
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,739
`Page 6 of 18
`
`WW eempnsing—a—seeeae
`
`ions—hnpaeting—thesputtefing—mrget to th_a_t generate set‘fieient a__dclitiona1 thermal energy
`
`in the sputtering target.WWW
`
`kneaflyeelatedewemperatureef—fliefipmtegmgmfgea
`
`28.
`
`(currently amended) The sputtering source of claim 27 further—eernpfisrng-a—gas
`
`exehange—meafis wherein the gas controller controls a flow of feed gas that diffuses fee
`
`eaeehanging the weeklystrongly—ionized plasmaMW
`
`{.11.}!
`
`ll'lli-é
`
`.
`
`29.
`
`(currentl y amended) The sputtering source of claim 27 wherein the thermal energy
`
`
`
`does not substantially increase an average temperature of the entire sputtering target.
`
`30.
`
`(currently amended) A sputtering source comprising:
`
`means for ionizing a feed gas to generate a weakly-iOnized plasma; in};
`
`means for generafing—a—strengbwni—aed—piasma—frem increasing the densig o: the
`
`weakly-ionized plasmarthe to generate a strongly—ionized plasma comprising having a
`
`density a—pl-urati-t—y of i0ns premnate—te-a-epettenng—sfiger-aee
`
` ~
`
`= that generate
`
`sufficient thermal energy in the sputtering target to camera a sputtering yield ef—the
`
`Sputtefing—tQFget to be non-linearly related to a temperature of the sputtering target,
`
`31.
`
`(new) The sputtering source of claim 1 wherein the rise time of the voltage pulse is in the
`
`range of approximately 0.1 microsecond to 10 seconds.
`
`32.
`
`(new) The sputtering source of claim 1 wherein the amplitude of the voltage pulse is in
`
`the range of approximately 200V to 30kV.
`
`33.
`
`(new) The sputtering source of claim 1 wherein a pulse width of the voltage pulse is in
`
`the range of approximately lOmicrosecond to 10Seconds.
`
`34.
`
`(new) The sputtering source of claim 1 wherein the ionization source and the pewer
`
`Supply comprise a single pewer Supply.
`
`PAGE 15m" RCVD AT 10119l2004 6:29:28 PM [Eastern Daylight Time]* SVR:USPTO-EFXRF-1!0* DNIS:8?29306"CSID:?81 271152? " DURATION (mm-ss):09-00
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`GILLETTE-1013] Page 6 of 18
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`GILLETTE-1013 / Page 6 of 18
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`

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`10/19/2004 THE 18215 FAX 781 271 1527 KURT RAUSCHENBACH
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`.016/027
`
`Amendment and Response
`Applicant: Chistyskov
`ScrialNo; l0/065.739
`Page 7 of 18
`
`35.
`
`(new) The sputtering source of claim 1 wherein a repetition rate between the voltage ’0
`
`pulses is in the range of O. ll-lz to lkl-lz.
`
`36.
`
`(new) The sputtering source of claim 7 wherein the magnet is chosen from the group
`
`comprising a permanent magnet, an electro—magnet. a balanced magnet Configuration,
`
`and an unbalanced magnet configuration.
`
`37.
`
`(new) The method of claim 16\wherein the rise time of the voltage pulse is in the range
`
`of appmximately 0.1microsecond and 105econds.
`
`38.
`
`(new) The method of claim 16 wherein the amplitude of the voltage pulse is in the range
`
`Of approximately 200V to 30kV.
`
`39.
`
`'
`
`.. (new) The method of claim 16 wherein a pulse width of the voltage pulse is in the range
`0 of approximately lmicrosecond to 10566011615.
`
`40.
`
`(new) The sputtering source of claim 27 wherein the rise time of the voltage pulse is in
`
`the range of approximately Ollmicrosecond to lOseconds.
`
`41.
`
`(new) The sputtering source of claim 27 wherein the amplitude of the voltage pulse is in
`
`the range of approximately 200V to 30kV.
`
`42'.
`
`i
`
`(new) The sputtering somee of claim 27 wherein a pulse width of the voltage pulse is in
`
`the range of approximately lmicrosecond to lOseconds.
`
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`

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`10/19/2004 TUE 18:15 FAX 781 271 1527 KURT RAUSCHENDACH
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`.017/02'7
`
`Amendment and Response
`Applicant: Chistyalcov
`Serial No.: 10/065,739
`Page 8 of 18
`
`Pending Claims:
`
`REMARKS
`
`Claims 1, 2, 4-17, and 19-42 are currently pending in the present applicatiOn. Claims
`
`1, 4, 5, 6, 8, l2, 16, 19, 20, 21, 25, and 27-30 are amended by the present Amendment.
`
`Claims 3 and 18 are cancelled without prejudice to Applicant’s right to right to pursm these
`
`claims in this or a subsequent application. Claims 3l—42 are added by the present
`
`Amendment. Upon entry of the present Amendment, reconsideratiOn of claims 1, 2, 4-17,
`
`and 19-30 and consideration of new claims 31-42 is respectfully requested.
`
`Rc'cctions under35 U.S.C. 102 b As Bein Antici atedb Kouznctsov;
`
`
`
`Claims 1, 3, 6-8, ll-l9, 23-25, and 30 are rejected under 35 U.S.C. §l02(b) as being
`
`anticipated by Kouznetsov (W098/40532) (hereinafter “KouznetsOV”). Independent claims 1,
`
`16, and 30 are herein amended to more clearly recite the invention.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or implicdly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`Only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`
`Independent Claim 1 and Dependent Claims 3 6-8 and 11-15
`
`The Applicant respectfully submits that Knuznetscv does not describe each and eveiy
`
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`
`recite a sputtering source having a power supply that generates a voltage pulse between an anode
`
`and a cathode assembly. An amplitude and a rise time of the voltage pulse are chasen to
`
`increase a density of ions enough to generate sufficient thermal energy in the Sputtering target to
`
`cause a sputtering yield from the sputtering target to be non-linearly related to a temperature of
`
`the sputtering target. As described in the originally-filed specificatiOn with reference to FIG. 8,
`the sputtering yield is a function of the temperature of the target in a thermal sputtering process
`
`according to the present invention.
`
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`GILLETTE-1013 / Page 8 of 18
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`10/19/2004 TUE 18:15 FAX 781 271 1527 KURT RAUSCHENBACH
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`@018/027
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,739
`Page 9 of' 18
`
`,
`
`The Applicant submits that there is no description or teaching in Kouznetscw of a power
`
`supply that generates a voltage pulse having an amplitude and a rise time that are chosen to
`
`increase a density of ions enOugh to generate sufficient thermal energy in the sputtering target to
`
`cause a sputtering yield from the sputtering target to be non-linearly related to a temperature of
`
`the Sputtering target. Instead, Kouznctsov describes a puISe shape having a steep rising edge up
`
`to a peak voltage and then decreases experientially (See page 5, lines 28-30).
`
`During the period in which the power supply described in Kouznctsov (hereinafler
`
`“Kouznetsov power supply”) generates the fully—ionized plasma, the voltage level decreases.
`
`The KOuznetSOV power supply does not choose a voltage amplitude as recited in amended claim
`
`I to generate a high density of ions. Rather, the Applicant believes that the Kouznetsov power '
`
`supply generates an output voltage that deereases to a level that is determined by the voltage -
`
`associated with the state of the fully-ionized plasma (See Kouznetsov page 12, lines 23-26). In
`
`other words, the Applicant believes that the output Voltage level of the Kouznctsov power supply
`
`is automatically chosen depending on the properties of the plasma and the interaction of the
`
`power supply with the planet. The Applicant, therefore, submits that there is no description in
`
`Kouznetsov of choosing an amplitude and a rise time of the pulse to increase a density of the
`ions enough to cause the sputtering yield to be non—linearly related to the temperature of the
`
`target.
`
`In View of the above remarks, the Applicant respectfully submits that Kouznetsov does
`
`'
`
`not describe each and every element of independent claim 1 as currently amended, either
`
`expressly or inherently. Therefore, the Applicant submits that Kouznetsov does not anticipate
`
`independent claim 1 as currently amended under 35 U.S.C. §102(b). Thus, the Applicant
`
`submits that independent claim 1 as currently amended is allowable. The Applicant also submits
`
`that dependent claims 3, 6-8, and 11-15 are allowable as depending fmm an allowable base
`
`claim.
`
`independent Claim 16 and Dependent Claims l7—l 9 and 23—25
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 16 as currently amended. Independent claim 16 has been amended
`
`to recite a method for high deposition rate sputtering including applying a voltage pulse to :1
`
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`' ~
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`GILLETTE-1013 I Page 9 of 18
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`GILLETTE-1013 / Page 9 of 18
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`10/19/2004 _TUE 18:16 FAX 781 271 1527 KURT RAUSCHENBACH
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`I019/027
`
`Amendment and Resp ensc
`Applicant: Chistyakov
`Serial No.: 10/065,739
`Page IO of 18
`
`cathode assembly having a sputtering target. An amplitude and rise time of the voltage pulse are
`
`chosen to increase a density of ions to generate sufficient thermal energy in the sputtering target
`
`to cause a sputtering yield fmm the sputtering target to be non-linearly related to a temperature
`
`of the sputtering target.
`
`The Applicant submits that there is no description or teaching in Kouznetsov of applying
`
`a voltage pulse to the cathode where the amplitude and the rise time of the voltage pulse are
`
`chosen to generate sufficient thermal energy in the sputtering target to cause a sputtering yield
`
`from the sputtering target to be non—linearly related to a temperature of the sputtering target.
`
`Instead, as described herein, the Kouznetsov power supply generates a pulse shape that has a
`
`' steep rising edge up to a peak voltage and then decreases exponentially (See page 5,‘ lineSQS-BO).
`
`The Applicant believes that the Kouznetsov power supply generates an output voltage that
`
`decreases to a level that is determined by the voltage associated with the state of the Fully—
`
`iom'zed plasma (See Kouznetsov page 12, lines 23-26). The Applicant submits that there is no
`
`description in Keuznetsov of choosing an amplitude and a rise time ofthc pulse to cause the
`
`sputtering yield to be non—linearly related to the temperature of the target as claimed in
`
`independent claim 16 as currently amended.
`
`In view of the above remarks, the Applicant respectfully submits that Kouznetmv does
`
`not describe each and every element of independent claim 16 as currently amended, either
`
`expressly or inherently. Therefore, the Applicant Submits that Kouznctsov does not anticipate
`
`independent claim 16 as currently amended under 35 U.S.C. §102(b). Thus, the Applicant
`
`submits that independent claim 16 as currently amended is allowable. The Applicant also
`
`submits that dependent claims 17-19 and 23-25 are a110wable as depending from an allowable
`base claim.
`
`Independent Claim 30
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`The Applicant re5pectfully submits that Kouznetsov does not describe each and every
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`element of independent claim 30 as currently amended. Independent claim 30 has been amended
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`to recite a sputtering source including a means for increasing the density of a weakly-ionized
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`plasma to generate a strongly—iOnized plasma having a density of ions that generate sufficient
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`thermal energy in the sputtering target to cause a sputtering yield from the sputtering target to be
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`GILLETTE-1013 I Page 10 of 18
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`GILLETTE-1013 / Page 10 of 18
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`10/19/2004 TUE 18:16 FAX 781 271 1527 KURT RAUSCHENBACH
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`‘
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`@020/027
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`Amendment and Response
`Applicant Chistynlcov
`Serial New 10/065,739
`Page 11 of 18
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`non-linearly related to a temperature of the sputtering target. As described herein, the Applicant
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`submits that the sputtering yield in the apparatus described in Kouznetsov is not non—linearly
`
`related to a temperature of the Sputtering target as recited in independent claim 30.
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`In view of the above remarks, the Applicant respectfully submits that Kouznetsov does
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`not describe each and every element of independent claim 30 as currently amended, either
`
`expressly or inherently. Therefore, the Applicant submits that Kouzn etsov does not anticipate
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`independent claim 30 as currently amended under 35 U.S.C. §102(b). Thus, lhe'Applicant
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`submits that independent claim 30 as currently amended is allowable.
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`, Re'ecfions under 35 U-‘i.C.
`
`
`103 as bein Un ntentable Over Kouznctsuv in View of
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`
`, Fortovt
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`Claims 1, 3, 6-19, 23-25, and 30 are rejected under 35 U.S.C. §103(a) as being
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`unpatentable over Kouznetsm in view of FortOV, “Encyclopedia of Low Temperature Plasma”,
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`' Volume 3, page 123, 2000 (hereinafter “Fortov”).
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`To be unpalentable under 35 U.S.C. §103(a), the differences between the subject matter
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`sought to be patented and the prior art must be such that the Subject matter as a whole would
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`have been obvious at the time the invention was made to a person having ordinary skill in the am.
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`There must be some suggestion or motivation, either in the references themselves or in the
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`- knowledge generally available to one of ordinary skill in the art, to modify or combine the
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`reference teachings. To establish primafacie obviOusness of‘a claimed inventicm, all the claim
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`limitations must be taught or suggested by the prior art.
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`Independent Claim 1 and Dependent Claims 3 and 6—15
`
`Independent claim I has been amended to recite a sputtering source including a power
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`Supply that generates a voltage pulse having an amplitude and a rise time that are chosen to
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`increase the density of ions in the strongly ionized plasma enough to generate sufficient thermal
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`energy in the sputtering target to cause a sputtering yield to be non-linearly related to'a
`
`temperature of the Sputtering target. This condition corresponds to the region 504 in FIG. 8 of
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`the present application. The temperature ofthe target in the regiOn 504 is equal to or greater than
`
`the melting point of the target material. Thus, by choosing the amplitude and the rise time of the
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`PAGE 2027* RCVD AT 101190004 6:29:28 PM [Eastern Daylight'Time] *'SVR:USPTO-EFXRF-1l0* DNIS:8729306 " CSID:?81 271152?“ DURATION (mm-ss):0900
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`GILLETTE-1013 I Page 11 of 18
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`GILLETTE-1013 / Page 11 of 18
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`I
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`10/19/2004‘TUE 18:16 FAX 781 271 1527 KURT RAUSCHENBACH
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`.021/027
`
`Amendment and ReSponsc
`Applicant: Chistyakov
`Serial Ne.: 10/065,739
`Page 12 ofl 8
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`voltage pulse generated by the power supply as recited in amended claim 1, the density of ions in
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`the plasma will be large enough so that target material is sputtered so rapidly that a large portion
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`of the heat generated at the surface of the sputtering target is dissipated in the sputtered material
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`and does not penetrate deeply into the sputtering target. Thus, the average temperature of the
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`sputtering target remains relatively low and the sputtering target does not require external
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`cooling.
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`The Applicant believes that the sputtering apparatus described in Kouznetsov uses a
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`conventional Sputtering process in which the average temperature of the sputtering target
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`increases as ions in the plasma bombard the sputtering target. Kouznctsov, describes a very
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`rapid temperature increase in the target and cenirnercially available cooling circuits that are used
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`to dissipate the heat (see Kouznetsov page 10 lines 24-34). The Applicant believes that the
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`sputteiing yield in the apparatus described in Kouznctsov is substantially constant during the
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`discharge pulses because cooling circuits are used to dissipate the heat. Therefbre, the Applicant
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`submits that the sputtering yield in the apparatus described in Kouznetsov is not non-linear] y
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`related to a temperature of the sputtering target as recited in independent claim 1.
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`Fortov describes the relationship between the sputtering yield and the temperature of the
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`.
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`target, but does not describe how to achieve the non-linear relationship between the sputtering
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`yield and the target temperature. The Applicant, therefore, submits that thereis no suggestion or
`motivation in K0uznetsov and Fortov of choosing an amplitude and a rise time of a voltage pulse
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`to increase the density of ions in the strongly ionized plasma enough to generate Sufficient
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`thermal energy in the sputtering target to cause a sputtering yield to be non—linearly related to a
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`temperature of the sputtering target.
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`In view of the above remarks, the Applicant submits that amended independent claim 1 is
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`not obvious under 35 U.S.C. §103(a) over Kouznetsov in View of Fortov. The Applicant also
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`submits that dependent claims 3 and 6-15 are allowable as depending from an allowable base
`
`claim.
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`GILLETTE-1013 / Page 12 of 18
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`10/18/2004.TUE 18217 FAX 781 271 1527 KURT RAUSCHENBACH
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`,
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`.022/027
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`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,739
`Page l3 of IS
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`Independent Claims 16 and 30 and Dependent Claims 17-19 and 23—25
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`Independent claim 16 has been amended to recite applying a voltage pulse to the cathode
`
`asSernbly to generate a strongly-ionized plasma from the weakly—innized plasma. An amplitude
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`and a rise time of the voltage pulse is chosen so that ions in the strongly-ionized plasma generate
`
`sufficient thermal energy in the sputtering target to cause a sputtering yield to be non—linearly
`
`related to a temperature of the sputtering target. Independent claim 30 has been amended to
`
`recite a sputtering source including a means for increasing the density of a weakly-ionized
`
`plasma to generate a strengly-ionized plasma that includes a density of ions that generate ~
`
`sufficient thermal energy in the sputtering target to cause a sputtering yield from the sputtering
`
`, target to be non-linearly related to a temperature of the sputtering target.
`
`.
`
`As described herein, there is no suggestionor motivation in Kouznetsov and Fortov of
`
`choosing an amplitude and a rise time of a voltage pulse so that ions in a strongly-ionized plasma
`generate sufficient thermal energy in the Sputtering target to cause a sputtering yield to be non-
`
`linearly related to a temperature of the sputtering target as recited in amended independent claim
`
`1. In addition, as described herein, the Applicant believes that the Sputtering yield in the
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`apparatus described in KOuznetsov is not non—linearly related to a temperature of the Sputtering
`.target as recited in independent claim 30 and Fortov does not describe how to achieve the non-
`
`.-
`
`‘
`
`- linear relationship between the sputtering yield and the target temperature.
`
`In view of the above remarks, the Applicant submits that amended independent claims 16
`
`and 30 are not obvious under 35 U.S.C. §103(a) over Kouznetsm in view of Fortov. The
`
`Applicant also submits that dependent claims 17—19 and 23-25 are allowable as depending from
`
`an allowable base claim.
`
`Re'ections under 35 U.S.C. 103 as bcin Un atentable Over Kouznetsov in View of Fortov
`
`
`
`
`and in Further View of Chiang:
`
`Dependent claims 4, 5, 20, 21, and 27-29 are rejected under 35 U.S.C. §103(a) as being
`
`unpatentablc over Kouznetsnv in view of Fortov and in Further view of Chiang et al., U.S. Pat.
`
`6,398,929 (hereinafter “Chiang”). The Applicant has amended claims 4, 5, 21, and 27-29 to
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`mere clearly recite what the Applicant regards as the invention.
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`GILLETTE-1013 I Page 13 of 18
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`GILLETTE-1013 / Page 13 of 18
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`10/19/2004‘TUE 18:17 FAX 781 271 1527 KURT RAUSCHENBACH
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`.023/027
`
`Amendment and Response
`Applicant: Cliistynkov
`Serial No.: 10/065,739
`Page l4 of Is
`
`Dependent Claims 4 and 5
`
`Dependent claims 4 and 5 depend on independent claim 1. As stated above, Applicant
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`respectfully Submits that independent claim I as currently amended is allowable over the prior
`
`art of record. Thus, Applicants submit that dependent claims 4 and 5 are allowable as depending
`
`from an allowable base claim.
`
`Dependent Claims 20 and 21
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`Dependent claims 20 and 21 depend on independent claim 16. As stated above,
`
`Applicant respectfully submits that independent claim 16 as currently amended is allowable over
`
`the prior art of record. Thus, Applicants submit that dependent claims 4 and 5 are allowable as
`
`depending from an allowable base claim.
`
`Independent Claim 27 and Dependent Claims 28—29
`
`Independent claim 27 has been amended to recite a power supply that generates a voltage
`pulse between the anode and the cathode assembly that creates a strongly-ionized plasma from
`
`the weakly-ionized plasma. The amplitude and the rise time of the voltage pulse is chosen to
`
`increase a density of ions in the strongly-ionized plasma enough to generate sufficient thermal
`energy in the sputtering target to cause a sputtering yield to be non—linear]y related; to a
`
`temperature of the sputtering target. Independent claim 27 has also been amended to recite a gas
`controller that controls a flow of the feed gas to the strongly~ionized plasma to facilitate the
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`creation of additional ions that generate additional thermal energy in the Sputtering target.
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`The Office Action mailed on May 20, 2004 states that Kouznetsov in View of Fortov
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`discloses substantially all featurcspf claim 27 except that the gas exchanging and exchange
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`means controller is not disclosed. The Office Action further states that Chiaug suggests the