`____________________________________________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`__________________________________________
`FUJITSU SEMICONDUCTOR LIMITED, FUJITSU SEMICONDUCTOR AMERICA, INC., ADVANCED MICRO
`DEVICES, INC., RENESAS ELECTRONICS CORPORATION, RENESAS ELECTRONICS AMERICA, INC., GLOBAL
`FOUNDRIES U.S., INC., GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG, GLOBALFOUNDRIES
`DRESDEN MODULE TWO LLC & CO. KG, TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., TOSHIBA
`AMERICA INC., TOSHIBA AMERICA INFORMATION SYSTEMS, INC., TOSHIBA CORPORATION, and THE
`GILLETTE COMPANY,
`Petitioners
`v.
`ZOND, LLC
`PatentOwner
`_____________________
`U.S. PatentNo. 7,604,716
`Cases IPR2014-‐00807; IPR2014-‐00808; IPR2014-‐01099; IPR2014-‐01100
`_____________________
`
`Patent Owner’s Demonstrative Exhibits
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`1
`
`
`
`‘716 Patent
`
`Low Power Pulse to Create A Weakly Ionized Plasma
`
`A pre-‐ionizing voltage is applied between the cathode
`204 and the anode 216 across the feed gas 226 to form
`the weakly-‐ionized plasma 232. The weakly-‐ionized
`plasma 232 is generally formed in the region 222 and
`diffuses to the region 234 as the feed gas 226 continues
`to flow. In one embodiment (not shown) a magnetic field
`is generated in the region 222 and extends to the center
`of the cathode 204. This magnetic field tends to assist in
`diffusing electrons from the region 222 to the region 234.
`The electrons in the weakly-‐ionized plasma 232 are
`substantially trapped in the region 234 by the magnetic
`field. In one embodiment, the volume of weakly-‐ionized
`plasma in the region 222 is rapidly exchanged with a new
`volume of feed gas 226.
`
`‘716 Patent at 7:63 – 8:8
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`2
`
`
`
`‘716 Patent
`
`Weakly Ionized Plasma Suppress Arc
`WhenHigh Power Applied
`
`Forming the weakly-‐ionized or pre-‐ionized plasma 232
`substantially eliminates the probability of establishing a
`breakdown condition in the chamber when high-‐power
`pulses are applied between the cathode 204 and the
`anode 216. The probability of establishing a breakdown
`condition is substantially eliminated because the
`weakly-‐ionized plasma 232 has a low-‐level of ionization
`that provides electrical conductivity through the
`plasma. This conductivity substantially prevents the
`setup of a breakdown condition, even when high
`power is applied to the plasma.
`
`‘716 Patent at 6:16-‐25.
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`3
`
`
`
`‘716 Patent
`
`High Power Pulse to Create
`Strongly-‐Ionized Plasma
`
`Referring to FIG. 2C, once the weakly-‐ionized plasma 232
`is formed, the pulsed power supply 202 generates high-‐
`power pulses between the cathode 204 and the anode
`216 (FIG. 2C).
`
`The high-‐power pulses generate a strong electric field
`236 between the cathode 204 and the anode 216. . . .
`[and] generate a highly-‐ionized or a strongly-‐ionized
`plasma 238 from the weakly-‐ionized plasma 232 (FIG.
`2C). The strongly-‐ionized plasma 238 is also referred to
`as a high-‐density plasma.
`
`‘716 Patent at 6:52-‐57, 7:3-‐19.
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`4
`
`
`
`‘716 Patent
`
`Claim 1
`
`An apparatus for generating a strongly-‐ionized plasma, the apparatus comprising:
`
`a. an ionization source that generates a weakly-‐ionized plasma from a feed
`gas contained in a chamber, the weakly-‐ionized plasma substantially eliminating the
`probability of developing an electrical breakdown condition in the chamber; and
`
`b. a power supply that supplies power to the weakly-‐ionized plasma though
`an electrical pulse that is applied across the weakly-‐ionized plasma, the electrical pulse
`having at least one of a magnitude and a rise-‐time that is sufficient to transform the
`weakly-‐ionized plasma to a strongly-‐ionized plasma without developing an electrical
`breakdown condition in the chamber.
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`5
`
`
`
`Wang – US Pat. 6,413,382
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`6
`
`
`
`Wang’s Fig. 4
`
`The on-‐and-‐off pulsing represented in the waveforms
`of FIG. 4 can be further improved to benefit
`semiconductor processing. Plasma ignition,
`particularly in plasma sputter reactors, has a
`tendency to generate particles during the initial
`arcing, which may dislodge large particles from the
`target or chamber.
`
`Wang at 7:1-‐6
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`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`7
`
`
`
`Wang’s Fig. 6
`
`The initial plasma ignition needs be performed
`only once and at much lower power levels so
`that particulates produced by arcing are much
`reduced.
`
`Wang at 7:47-‐49 (emphasis added).
`
`“So Wang goes on to teach that arcing can be
`reduced by igniting the plasma only once and
`using the background power level, P sub B, to
`maintain the plasma between the high power
`pulses, P sub P.”
`
`Kortshagen Depo., Ex. 2007 at 42:19-‐23
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`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`8
`
`
`
`‘716 Patent
`
`Claim 6
`
`The apparatus of claim 1 wherein the power supply supplies power to the weakly
`ionized plasma at a time that is between about fifty microsecond and five second after
`the ionization source generates the weakly-‐ionized plasma.
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`9
`
`
`
`Wang
`
`“In the embodiment shown in Figure 6 there is only
`one plasma ignition”
`
`“once the plasma has been ignited it does not have
`to be reignited.”
`
`Kortshagen Depo., Ex. 2009 at 34:4-‐5, 6-‐8
`
`“I believe the ionization source to which claim 1 of
`the ‘716 patent refers is the same as the DC power
`supply 100 which is shown in Figure 7 of the Wang
`reference.”
`
`Kortshagen Depo., Ex. 2009 at 39:10-‐14
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
`
`10
`
`
`
`Kudryavetsev
`
`Fujitsu et al. v. Zond
`IPRs 2014-‐00807, 2014-‐00808, 2014-‐01099, 2014-‐01100
`Zond Ex. 2010
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`11