throbber
UNITED  STATES  PATENT  AND  TRADEMARK  OFFICE
`____________________________________________
`
`BEFORE  THE  PATENT  TRIAL  AND  APPEAL  BOARD
`__________________________________________
`FUJITSU  SEMICONDUCTOR  LIMITED, FUJITSU  SEMICONDUCTOR  AMERICA, INC., ADVANCED  MICRO  
`DEVICES, INC., RENESAS  ELECTRONICS  CORPORATION,  RENESAS  ELECTRONICS  AMERICA,  INC.,  GLOBAL  
`FOUNDRIES  U.S., INC.,  GLOBALFOUNDRIES  DRESDEN  MODULE  ONE  LLC  &  CO.  KG, GLOBALFOUNDRIES  
`DRESDEN  MODULE  TWO  LLC  &  CO.  KG, TOSHIBA  AMERICA  ELECTRONIC  COMPONENTS, INC.,  TOSHIBA  
`AMERICA  INC., TOSHIBA  AMERICA  INFORMATION SYSTEMS, INC.,  TOSHIBA  CORPORATION, and  THE  
`GILLETTE   COMPANY,
`Petitioners  
`v.
`ZOND, LLC
`PatentOwner
`_____________________
`U.S.  PatentNo.  7,604,716
`Cases  IPR2014-­‐00807;  IPR2014-­‐00808;  IPR2014-­‐01099;  IPR2014-­‐01100
`_____________________
`
`Patent Owner’s  Demonstrative Exhibits
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100  
`Zond Ex.  2010
`
`1
`
`

`
`‘716  Patent
`
`Low  Power  Pulse  to  Create  A  Weakly  Ionized  Plasma  
`
`A  pre-­‐ionizing  voltage  is  applied  between  the  cathode  
`204  and  the  anode  216  across  the  feed  gas  226  to  form  
`the  weakly-­‐ionized  plasma  232.  The  weakly-­‐ionized  
`plasma  232  is  generally  formed  in  the  region  222  and  
`diffuses  to  the  region  234  as  the  feed  gas  226  continues  
`to  flow.  In  one  embodiment  (not  shown)  a  magnetic  field  
`is  generated  in  the  region  222  and  extends  to  the  center  
`of  the  cathode  204.  This  magnetic  field  tends  to  assist  in  
`diffusing  electrons  from  the  region  222  to  the  region  234.  
`The  electrons  in  the  weakly-­‐ionized  plasma  232  are  
`substantially  trapped  in  the  region  234  by  the  magnetic  
`field.  In  one  embodiment,  the  volume  of  weakly-­‐ionized  
`plasma  in  the  region  222  is  rapidly  exchanged  with  a  new  
`volume  of  feed  gas  226.
`
`‘716  Patent  at  7:63  – 8:8
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`2
`
`

`
`‘716 Patent
`
`Weakly Ionized  Plasma Suppress  Arc
`WhenHigh Power Applied
`
`Forming  the  weakly-­‐ionized  or  pre-­‐ionized  plasma  232  
`substantially  eliminates  the  probability  of  establishing  a  
`breakdown  condition  in  the  chamber  when  high-­‐power  
`pulses  are  applied  between  the  cathode  204  and  the  
`anode  216.  The  probability  of  establishing  a  breakdown  
`condition  is  substantially  eliminated  because  the  
`weakly-­‐ionized  plasma  232  has  a  low-­‐level  of  ionization  
`that  provides  electrical   conductivity  through  the  
`plasma.  This  conductivity  substantially  prevents  the  
`setup  of  a  breakdown  condition,  even  when  high  
`power  is  applied  to  the  plasma.
`
`‘716  Patent  at  6:16-­‐25.
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`3
`
`

`
`‘716 Patent
`
`High  Power  Pulse  to  Create  
`Strongly-­‐Ionized  Plasma
`
`Referring  to  FIG.  2C,  once  the  weakly-­‐ionized  plasma  232  
`is  formed,  the  pulsed  power  supply  202  generates  high-­‐
`power  pulses  between  the  cathode  204  and  the  anode  
`216  (FIG.  2C).  
`
`The  high-­‐power  pulses  generate  a  strong  electric   field  
`236  between  the  cathode  204  and  the  anode  216.  .  .  .  
`[and]  generate  a  highly-­‐ionized  or  a  strongly-­‐ionized  
`plasma  238  from  the  weakly-­‐ionized  plasma  232  (FIG.  
`2C).  The  strongly-­‐ionized  plasma  238  is  also  referred  to  
`as  a  high-­‐density  plasma.  
`
`‘716  Patent  at  6:52-­‐57,  7:3-­‐19.
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100  
`Zond Ex.  2010
`
`4
`
`

`
`‘716 Patent
`
`Claim  1
`
`An  apparatus  for  generating  a  strongly-­‐ionized  plasma,  the  apparatus  comprising:  
`
`a.  an  ionization  source  that  generates  a  weakly-­‐ionized  plasma  from  a  feed  
`gas  contained  in  a  chamber,  the  weakly-­‐ionized  plasma  substantially  eliminating  the  
`probability  of  developing  an  electrical  breakdown  condition  in  the  chamber;  and  
`
`b.  a  power  supply  that  supplies  power  to  the  weakly-­‐ionized  plasma  though  
`an  electrical  pulse  that  is  applied  across  the  weakly-­‐ionized  plasma,  the  electrical  pulse  
`having  at  least  one  of  a  magnitude  and  a  rise-­‐time  that  is  sufficient  to  transform  the  
`weakly-­‐ionized  plasma  to  a  strongly-­‐ionized  plasma  without  developing  an  electrical  
`breakdown  condition  in  the  chamber.  
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`5
`
`

`
`Wang – US  Pat.  6,413,382
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`6
`
`

`
`Wang’s Fig. 4
`
`The  on-­‐and-­‐off  pulsing  represented  in  the  waveforms  
`of  FIG.  4  can  be  further  improved  to  benefit  
`semiconductor  processing.  Plasma  ignition,  
`particularly  in  plasma  sputter  reactors,  has  a  
`tendency  to  generate  particles  during  the  initial  
`arcing,  which  may  dislodge  large  particles  from  the  
`target  or  chamber.  
`
`Wang  at  7:1-­‐6
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`7
`
`

`
`Wang’s Fig. 6
`
`The  initial  plasma  ignition  needs  be  performed  
`only  once  and  at  much  lower  power  levels  so  
`that  particulates  produced  by  arcing  are  much  
`reduced.
`
`Wang  at  7:47-­‐49  (emphasis  added).
`
`“So  Wang  goes  on  to  teach  that  arcing  can  be
`reduced  by  igniting  the  plasma  only  once  and  
`using  the  background  power  level,  P sub  B,  to  
`maintain  the  plasma  between  the  high  power  
`pulses,  P  sub  P.”
`
`Kortshagen Depo.,  Ex.  2007  at  42:19-­‐23  
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`8
`
`

`
`‘716 Patent
`
`Claim  6
`
`The  apparatus  of  claim  1  wherein  the  power  supply  supplies  power  to  the  weakly  
`ionized  plasma  at  a  time  that  is  between  about  fifty  microsecond  and  five  second  after  
`the  ionization  source  generates  the  weakly-­‐ionized  plasma.
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`9
`
`

`
`Wang
`
`“In  the  embodiment  shown  in  Figure  6  there  is  only  
`one plasma  ignition”  
`
`“once  the  plasma  has  been  ignited  it  does not  have  
`to  be  reignited.”
`
`Kortshagen Depo.,  Ex.  2009  at  34:4-­‐5,  6-­‐8
`
`“I  believe  the ionization  source  to  which  claim  1  of  
`the  ‘716  patent  refers  is  the  same  as  the DC  power  
`supply  100  which  is  shown  in  Figure  7  of  the  Wang  
`reference.”
`
`Kortshagen Depo.,  Ex.  2009  at  39:10-­‐14
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`10
`
`

`
`Kudryavetsev
`
`Fujitsu  et  al.  v.  Zond
`IPRs 2014-­‐00807,  2014-­‐00808,  2014-­‐01099,  2014-­‐01100    
`Zond Ex.  2010
`
`11

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