`References cited herein:
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
` U.S. Patent No. 7,604,716 (“‘716 Patent”)
`
` U.S. Pat. No. 6,413,382 (“Wang”)
`
` Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
` Milton Ohring, The Material Science of Thin Films, Academic Press, 1992 (“Ohring”)
`
` Yu. P. Raizer, Gas Discharge Physics, Springer, 1991 (“Raizer”)
`
`
`
`Claims 1-11 and 33
`
`1. An apparatus for
`generating a
`strongly-ionized
`plasma, the
`apparatus
`comprising:
`
`a. an ionization
`source that generates
`a weakly-ionized
`plasma from a feed
`gas contained in a
`chamber, the
`weakly-ionized
`plasma substantially
`eliminating the
`probability of
`
`ActiveUS 122390575v.1
`
`Wang
`
`Wang discloses an apparatus for generating a strongly-ionized plasma.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB, more preferably at least 100 times, and most
`preferably 1000 times to achieve the greatest effect of the invention. A
`background power PB of 1kW will typically be sufficient to support a
`plasma with the torpedo magnetron and a 200 mm wafer although with
`little if any actual sputter deposition.”)
`
`Wang at 7:28-30 (“ the application of the high peak power PP instead
`quickly causes the already existing plasma to spread and increases the
`density of the plasma”) (emphasis added).
`
`Wang at 7:31-39 (“In one mode of operating the reactor, during the
`background period, little or no target sputtering is expected. The SIP
`reactor is advantageous for a low-power, low-pressure background
`period since the small rotating SIP magnetron can maintain a plasma at
`lower power and lower pressure than can a larger stationary magnetron.
`However, it is possible to combine highly ionized sputtering during the
`pulses with significant neutral sputtering during the background
`period.”)
`Wang discloses an ionization source that generates a weakly-ionized
`plasma from a feed gas contained in a chamber, the weakly-ionized
`plasma substantially eliminating the probability of developing an
`electrical breakdown condition in the chamber.
`
`Wang at Fig. 7
`
`Wang at 4:5-6 (“A sputter working gas such as argon is supplied from a
`gas source 32….”)
`
`- 1 -
`
`INTEL 1022
`
`

`

`
`
`Claims 1-11 and 33
`
`developing an
`electrical breakdown
`condition in the
`chamber; and
`
`b. a power supply
`that supplies power
`to the weakly-
`ionized plasma
`though an electrical
`pulse that is applied
`across the weakly-
`ionized plasma, the
`electrical pulse
`having at least one of
`a magnitude and a
`
`ActiveUS 122390575v.1
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is supplied to
`the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region 42 of a high-
`density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber… The
`initial plasma ignition needs be performed only once and at much lower
`power levels so that particulates produced by arcing are much
`reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been ignited at the
`beginning of sputtering prior to the illustrated waveform, no more
`plasma ignition occurs.”).
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to the target
`14 … and supplies an essentially constant negative voltage to the target
`14 corresponding to the background power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW will typically be
`sufficient to support a plasma…”)
`
`Wang discloses a power supply that supplies power to the weakly-
`ionized plasma though an electrical pulse that is applied across the
`weakly-ionized plasma, the electrical pulse having at least one of a
`magnitude and a rise-time that is sufficient to transform the weakly-
`ionized plasma to a strongly-ionized plasma without developing an
`electrical breakdown condition in the chamber.
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`
`- 2 -
`
`

`

`
`
`Claims 1-11 and 33
`
`rise-time that is
`sufficient to
`transform the
`weakly-ionized
`plasma to a strongly-
`ionized plasma
`without developing
`an electrical
`breakdown condition
`in the chamber.
`
`2. The apparatus of
`claim 1 wherein the
`pulsed power supply
`is a component in the
`ionization source.
`
`3. The apparatus of
`claim 1 wherein the
`ionization source is
`chosen from the
`group comprising an
`electrode coupled to
`
`ActiveUS 122390575v.1
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB of
`1 kW will typically be sufficient…”)
`
`Wang at 7:28-30 (“… the application of the high peak power PP instead
`quickly causes the already existing plasma to spread and increases the
`density of the plasma.”).
`
`Wang at 7:36-39 (“However, it is possible to combine highly ionized
`sputtering during the pulses with significant neutral sputtering during
`the background period.”)
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall times
`are expected.”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber… The
`initial plasma ignition needs be performed only once and at much lower
`power levels so that particulates produced by arcing are much
`reduced.”).
`
`See evidence cited in claim 1 preamble.
`Wang discloses the pulsed power supply is a component in the
`ionization source.
`
`See evidence cited in claim 1.
`
`Wang at Figs. 1 and 7.
`
`Wang at 7:57-63 (“A variable DC power supply 100 … supplies an
`essentially constant negative voltage to the target 14 corresponding to
`the background power PB. The pulsed DC power supply 80 produces a
`train of negative voltage pulses….”).
`
`Wang discloses the ionization source is chosen from the group
`comprising an electrode coupled to a DC power supply, an electrode
`coupled to an AC power supply, a UV source, an X-ray source, an
`electron beam source, an ion beam source, an inductively coupled
`plasma source, a capacitively coupled plasma source, and a microwave
`
`- 3 -
`
`

`

`
`
`Claims 1-11 and 33
`
`a DC power supply,
`an electrode coupled
`to an AC power
`supply, a UV source,
`an X-ray source, an
`electron beam
`source, an ion beam
`source, an
`inductively coupled
`plasma source, a
`capacitively coupled
`plasma source, and a
`microwave plasma
`source.
`
`4. The apparatus of
`claim 1 wherein the
`power supply
`generates a constant
`power.
`
`5. The apparatus of
`claim 1 wherein the
`power supply
`generates a constant
`voltage.
`
`6. The apparatus of
`claim 1 wherein the
`power supply
`supplies power to the
`weakly ionized
`plasma at a time that
`is between about
`fifty microsecond
`and five second after
`the ionization source
`generates the
`weakly-ionized
`
`ActiveUS 122390575v.1
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`plasma source.
`
`See evidence cited in claim 1.
`
`Wang at Figs. 1 and 7.
`
`Wang at 7:58 (“… DC power supply 100 is connected to the target
`14.”).
`
`Wang discloses the power supply generates a constant power.
`
`See evidence cited in claim 1.
`
`‘716 Patent at Fig. 4
`
`Wang at Figs. 1, 6 and 7
`Wang discloses the power supply generates a constant voltage.
`
`See evidence cited in claim 1.
`
`Wang at 7:61-62. (“[P]ulsed DC power supply 80 produces a train of
`negative voltage pulses.”)
`
`One of ordinary skill would have understood that Wang’s voltage would
`be constant for at least a portion of the duration of the pulse τw so as to
`produce pulse PP of constant power.
`
`Wang discloses the power supply supplies power to the weakly ionized
`plasma at a time that is between about fifty microsecond and five
`second after the ionization source generates the weakly-ionized plasma.
`
`See evidence cited in claim 1.
`
`Wang at Fig. 6.
`
`Wang at 5:43-46 (“The choice of pulse width τw is dictated …
`Typically, it should be at least 50 μs.”).
`
`Wang at 5:55-56. (“ratio of the pulse width to the repetition period τw /
`
`- 4 -
`
`

`

`
`
`Claims 1-11 and 33
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`plasma.
`
`τp is preferably less than 10% and more preferably less than 1%...”.).
`
`For a 10% ratio, Wang’s repetition period τp is 500 μs and the duration
`of the background power, PB, (and the weakly-ionized plasma) is 450 μs
`(i.e., repetition period τp minus the peak power pulse width τw). For a
`1% ratio, Wang’s repetition period τp is 5,000 μs and the duration of the
`background power, PB, (and the weakly-ionized plasma) is 4,950 μs.
`For both of Wang’s suggested ratios, the power supply supplies power
`to the weakly ionized plasma at a time that falls within the claimed
`range, i.e., the peak power PP is applied between 50 microseconds and 5
`seconds after generation of the weakly-ionized plasma.
`
`Wang discloses the power supply supplies power to the weakly ionized
`plasma for a duration that is sufficient to generate a quasi-static electric
`field across the weakly-ionized plasma.
`
`See evidence cited in claim 1.
`
`’716 Patent, 7:9-12 (“By quasi-static electric field we mean an electric
`field that has a characteristic time of electric field variation that is much
`greater than the collision time for electrons with neutral gas particles.”).
`
`Wang at 4:5-7 (“A sputter working gas such as argon is supplied from a
`gas source 32 through a mass flow controller 34 to a region in back of
`the grounded shield 24.”).
`
`Wang at 7:61-62 (“pulsed DC power supply 80 produces a train of
`negative voltage pulses.”)
`
`Wang at 5:45-48 (“[The pulse width τw] should be at least 50 μs.”)”
`
`Fu at 1:46-48 (“Although the base pressure can be held to about 10-7
`Torr or even lower, the pressure of the working gas is typically
`maintained at between about 1 and 1000 mTorr.”). [Wang incorporates
`Fu by reference]
`
`Background:
`Raizer at 11, §2.1.4 (“The collision frequency m is proportional
`to…pressure p.”).
`
`Raizer at Table 2.1 (“m/p = 5.3 x 109 s-1 Torr-1”)
`
`Wang discloses the cathode is generally formed in the shape of at least
`one circular disk.
`
`- 5 -
`
`7. The apparatus of
`claim 1 wherein the
`power supply
`supplies power to the
`weakly ionized
`plasma for a duration
`that is sufficient to
`generate a quasi-
`static electric field
`across the weakly-
`ionized plasma.
`
`8. The apparatus of
`claim 1 wherein the
`cathode is generally
`
`ActiveUS 122390575v.1
`
`

`

`
`
`Claims 1-11 and 33
`
`formed in the shape
`of at least one
`circular disk.
`
`9. The apparatus of
`claim 1 wherein the
`ionization source
`generates the
`weakly-ionized
`plasma from a
`reactive feed gas
`contained in a
`chamber.
`
`10. The apparatus of
`claim 1 further
`comprising a magnet
`that is positioned to
`generate a magnetic
`field proximate to
`the weakly-ionized
`plasma, the magnetic
`field trapping
`electrons in the
`weakly-ionized
`plasma.
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`See evidence cited in claim 1.
`
`Wang at 3:4-8 (“However, the favorable results shown by Kouznetsov
`et al. have apparently been accomplished with a target having a
`diameter of 150 mm. Such a target size is adequate for 100 mm wafers,
`but considerably smaller than the size required for 200 mm or 300 mm
`wafers.”).
`
`Wang at 7:22-25 (“A background power PB of 1 kW will typically be
`sufficient to support a plasma with the torpedo magnetron and a 200
`mm wafer although with little if any actual sputter deposition.”).
`
`Gopalraja at 3:13-14 (“[T]he target diameter is typically only slightly
`greater than the wafer diameter.” (emphasis added)). [Wang
`incorporates Gopalraja by reference]
`
`One of ordinary skill would understand that Wang’s cathode was
`circular.
`
`Wang discloses the ionization source generates the weakly-ionized
`plasma from a reactive feed gas contained in a chamber.
`
`See evidence cited in claim 1.
`
`Wang at 4:19-23 “In reactive sputtering, for example, of TiN using a
`titanium target, a reactive gas, for example, nitrogen is supplied to the
`processing space 22 to react with the sputtered titanium to form TiN on
`the surface of the wafer 20.” (emphasis added).
`
`Wang discloses a magnet that is positioned to generate a magnetic field
`proximate to the weakly-ionized plasma, the magnetic field trapping
`electrons in the weakly-ionized plasma.
`
`See evidence cited in claim 1.
`
`Wang at Fig. 1.
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the target
`14 which traps electrons from the plasma to increase the electron
`density. For charge neutrality, the ion density also increases, thus
`creating a region 42 of a high-density plasma (HDP)”) (emphasis
`added).
`
`11. The apparatus of Wang discloses the magnet generates a magnetic field that is shaped to
`
`ActiveUS 122390575v.1
`
`- 6 -
`
`

`

`
`
`Claims 1-11 and 33
`
`claim 10 wherein the
`magnet generates a
`magnetic field that is
`shaped to trap
`secondary electrons
`that are produced by
`ion bombardment.
`
`33. An apparatus for
`generating a
`strongly-ionized
`plasma, the
`apparatus
`comprising:
`
`a. means for ionizing
`a feed gas in a
`chamber to form a
`weakly-ionized
`plasma that
`substantially
`eliminates the
`probability of
`developing an
`electrical breakdown
`condition in the
`chamber; and
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`trap secondary electrons that are produced by ion bombardment.
`
`See evidence cited in claim 10.
`
`Wang at 7:36-39 (“However, it is possible to combine highly ionized
`sputtering during the pulses….”).
`
`Wang at 4:23-26 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the target
`14 which traps electrons from the plasma to increase the electron
`density.”) (emphasis added).
`
`Wang discloses an apparatus for generating a strongly-ionized plasma.
`
`See evidence cited in claim 1 preamble.
`
`Wang discloses means for ionizing a feed gas in a chamber to form a
`weakly-ionized plasma that substantially eliminates the probability of
`developing an electrical breakdown condition in the chamber.
`
`Claimed function
`
`Claim 33 recites “means for ionizing a feed gas in a chamber to form a
`weakly-ionized plasma that substantially eliminates the probability of
`developing an electrical breakdown condition in the chamber.”
`
`Wang discloses the function corresponding to “means for ionizing…”
`
`Wang at Fig. 7
`
`Wang at 4:5-6 (“A sputter working gas such as argon is supplied from a
`gas source 32….”)
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is supplied to
`the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`
`ActiveUS 122390575v.1
`
`- 7 -
`
`

`

`
`
`Claims 1-11 and 33
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region 42 of a high-
`density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber… The
`initial plasma ignition needs be performed only once and at much lower
`power levels so that particulates produced by arcing are much
`reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been ignited at the
`beginning of sputtering prior to the illustrated waveform, no more
`plasma ignition occurs.”).
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to the target
`14 … and supplies an essentially constant negative voltage to the target
`14 corresponding to the background power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW will typically be
`sufficient to support a plasma…”)
`
`Corresponding Structure
`
`The ‘716 Patent discloses the following structure that corresponds to the
`means for ionizing:
`
`a power supply, generating the voltage, current and power values shown
`in Fig. 4 (e.g., between t1 – t2 and t6 – t7), electrically coupled to cathode
`(e.g., 204), anode (e.g., 216) and/or an electrode (e.g., 452, 452’),
`wherein the cathode, anode and/or electrode are arranged relative to a
`sputtering target as shown in Figs. 2A-2D and 6A-6D, and as described
`in the text of the ‘716 Patent at 5:1-32, 16:10-25, 17:24-61, 17:62-15,
`and 18:16-27.
`
`Wang discloses the structure corresponding to “means for ionizing…”
`limitation. For example:
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to the target
`14 … and supplies an essentially constant negative voltage to the target
`14 corresponding to the background power PB.”).
`
`See evidence cited in limitation (a) of claim 1.
`
`ActiveUS 122390575v.1
`
`- 8 -
`
`

`

`
`
`Claims 1-11 and 33
`
`b. means for
`supplying an
`electrical pulse
`across the weakly-
`ionized plasma to
`transform the
`weakly-ionized
`plasma to a strongly-
`ionized plasma
`without developing
`an electrical
`breakdown condition
`in the chamber.
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`The combination of Wang with Mozgrin discloses means for supplying
`an electrical pulse across the weakly-ionized plasma to transform the
`weakly-ionized plasma to a strongly-ionized plasma without developing
`an electrical breakdown condition in the chamber.
`
`Claimed function
`
`Claim 33 recites “means for supplying an electrical pulse across the
`weakly-ionized plasma to transform the weakly-ionized plasma to a
`strongly-ionized plasma without developing an electrical breakdown
`condition in the chamber.”
`
`Mozgrin discloses the function corresponding to “means for
`supplying…”
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB of
`1 kW will typically be sufficient…”)
`
`Wang at 7:28-30 (“… the application of the high peak power PP instead
`quickly causes the already existing plasma to spread and increases the
`density of the plasma.”).
`
`Wang at 7:36-39 (“However, it is possible to combine highly ionized
`sputtering during the pulses with significant neutral sputtering during
`the background period.”)
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall times
`are expected.”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber… The
`initial plasma ignition needs be performed only once and at much lower
`power levels so that particulates produced by arcing are much
`reduced.”).
`
`
`ActiveUS 122390575v.1
`
`- 9 -
`
`

`

`
`
`Claims 1-11 and 33
`
`EXHIBIT B.07
`U.S. Patent No. 7,604,716
`
`Wang
`
`See evidence cited in limitation [1pre] of claim 1.
`
`Corresponding Structure
`
`The ‘716 Patent discloses the following structure that corresponds to the
`“means for applying…”:
`
`pulsed power supply (e.g., 202), generating the voltage, current and
`power values shown in Fig. 4 (e.g., between t2 – t4), electrically coupled
`to a cathode (e.g., 204) and anode (e.g., 216), wherein the cathode and
`anode are arranged relative to a sputtering target as shown in Figs. 2A-
`2D and 6A-6D, and as described in the text of the ‘716 Patent at 6:53-
`7:24, 8:9-19, 11:59-12:6, 13:14-44, 13:52-60, 16:64-17:18, 18:50-61,
`and 19:1-11
`
`Wang discloses the structure corresponding to the “means for
`supplying…” limitation. For example:
`
`Wang at Figs. 1, 6 and 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses.”)
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`
`
`ActiveUS 122390575v.1
`
`- 10 -
`
`