EXHIBIT A.06
`
`U.S. Patent No. 7,147,759
`
`References cited herein:
`
`0 U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
`. U.S. Pat. No. 6,413,382 (“Wang”)
`
`. A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`0 Yu. P. Raizer, Gas Discharge Physics, Springer, 1991 (“Raizer”)
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`[lpre.] A magnetically enhanced The combination of Wang with Kudryavtsev discloses a magnetically
`sputtering source comprising:
`enhanced sputtering source.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron”).
`
`[1a.] an anode;
`
`The combination of Wang with Kudryavtsev discloses an anode.
`
` 1
`
`‘759 Patent at Fig. l
`102
`PUI SEE
`POWER
`SDPPLV
`
`
`
`pRlOR ART
`FIG,1
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional View of a
`known magnetron sputtering apparatus having a pulsed power
`source.”
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly”)
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`[1b.] a cathode assembly that is
`positioned adjacent to the anode,
`the cathode assembly including a
`sputtering target;
`
`The combination of Wang with Kudryavtsev discloses a cathode
`assembly that is positioned adjacent to the anode, the cathode
`assembly including a sputtering target.
`
`‘759 Patent at Fig. 1
`
`
`
`
`
`
`
`
`
`vacuum .
`PUMP
`
`
`
`9RIOR Ml :‘
`FIG. 1
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional View of a
`known magnetron sputtering apparatus having a pulsed power
`source.”
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`[1c.] an ionization source that
`generates a weakly-ionized
`I lasma roximate to the anode
`
`The combination of Wang with Kudryavtsev discloses an ionization
`source that generates a weakly-ionized plasma proximate to the anode
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`and the cathode assembly;
`
`and the cathode assembly.
`
`Wang at Fig. 1.
`
`[1d] a magnet that is positioned
`to generate a magnetic field
`proximate to the weakly-ionized
`plasma, the magnetic field
`substantially trapping electrons
`in the weakly-ionized plasma
`proximate to the sputtering
`target; and
`
`
`
`Wang at 7:17-31 (“The background power level P3 is chosen to
`exceed the minimum power necessary to support a plasma...
`[T]he
`application of the high peak power Pp quickly causes the already
`existing plasma to spread and increases the density of the plasma”)
`
`Wang at 7:19-25 (“Preferably, the peak power Pp is at least 10 times
`the background power PB
`and most preferably 1000 times to
`achieve the greatest effect of the invention. A background power P3
`of 1 kW [causes] little if any actual sputter deposition”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP). . .”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs to be performed
`only once and at much lower power levels so that particulates
`produced by arcing are much reduced”).
`
`The combination of Wang with Kudryavtsev discloses a magnet that is
`positioned to generate a magnetic field proximate to the weakly-
`ionized plasma, the magnetic field substantially trapping electrons in
`the weakly-ionized plasma proximate to the sputtering target.
`
`‘759 Patent at 3: 10-12 (“FIG. 1 shows a cross-sectional View of a
`known magnetron sputtering apparatus 100...” that has a magnet
`1267’)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. I] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest
`in a confinement region 142. . ..”)
`
`Wang at Fig. 1.
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`target 14 which traps electrons fiom the plasma to increase the
`electron density”)
`
`[le.] a power supply generating
`a voltae nulse that nroduces an
`
`The combination of Wang with Kudryavtsev discloses a power supply
`eneratin;
`unlse that nroduces an electric field between the
`
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`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1—10, 12—15, 19-26, 28-
`
`31, 34, 36, 37, 40—43 and 46-48
`
`Wang in view of Kudryavtsev
`
`electric field between the
`
`cathode assembly and the anode,
`the power supply being
`configured to generate the
`voltage pulse with an amplitude
`and a rise time that increases an
`
`excitation rate of ground state
`atoms that are present in the
`weakly-ionized plasma to create
`a multi-step ionization process
`that generates a strongly-ionized
`plasma, which comprises ions
`that sputter target material, from
`the weakly-ionized plasma, the
`multi-step ionization process
`comprising exciting the ground
`state atoms to generate excited
`atoms, and then ionizing the
`excited atoms within the weakly-
`ionized plasma without forming
`an arc discharge.
`
`cathode assembly and the anode, the power supply being configured
`to generate the voltage pulse with an amplitude and a rise time that
`increases an excitation rate of ground state atoms that are present in
`the weakly-ionized plasma to create a multi-step ionization process
`that generates a strongly-ionized plasma, which comprises ions that
`sputter target material, fiom the weakly-ionized plasma, the multi-step
`ionization process comprising exciting the ground state atoms to
`generate excited atoms, and then ionizing the excited atoms within the
`weakly-ionized plasma without forming an arc discharge.
`
`‘759 Patent at Fig. 5
`
`Wang at Figs. 6, 7.
`
`14
`mm—
`
`80
`
`PULSED DC W '
`
`SUPPLY
`
`FIG. 7
`
` A100
`
`
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train
`of negative voltage pulses.”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level Pp is at least 10
`times the background power level PB,
`most preferably 1000 times
`to achieve the greatest effects of the invention. A background power
`P3 of 1 kW will typically be sufficient. . .”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
`low- ressure back round eriod since the small rotatin; SIP
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`magnetron can maintain a plasma at a lower power and lower pressure
`than can a larger stationary magnetron. However, it is possible to
`combine highly ionized sputtering during the pulses With significant
`neutral sputtering during the back ground period”).
`
`Wang at 73-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed
`only once and at much lower power levels so that particulates
`produced by arcing are much reduced.”).
`
`Kudryavtsev at Fig. 1
`
`Wang at 7: 13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6... As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform. . .”).
`
`Kudryavtsev at 34, right col, 1] 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas breakdown,
`laser sparks, etc.”)
`
`
`
`
`
`FIG. 1. Diagram showing the rularlve river of the nlrcr
`Huxm In n-rms of (he atomic energy leveh {or [hr slaw
`and last (h) sugar. The width of llic arrows (ndlcamr
`magnlrudc thu electron flux.
`I‘liu Imrlmmal arrow!
`the dlffiulnn fluws of electrons and excited mum mac
`the ml]: of 1hr dixclzargc tuba.
`
`Kudryavtsev at Fig. 6
`
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`

`EXHIBIT A.06
`
`U.S. Patent No. 7,147,759
`
`Claims 1—10, 12—15, 19-26, 28-
`
`31, 34, 36, 37, 40—43 and 46-48
`
`Wang in view of Kudryavtsev
`
`.9
`
`7.5
`
`37
`
`27 X?
`
`.79
`
`5/17, , Td
`FIG. 6. The beltax'ior of “e in the bulk of an argon discharge. 1) nee/I11 =
`10-5; 2) 10'1. Stepwise ionization predominates in region 1. direct ioniza-
`tion processes predominate in region [1, and ”c does not increase in region
`11!.
`
`
`
`Kudryavtsev at 31, right col, 1] 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents
`in terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, 1] 6 (“For nearly stationary n2 [excited
`atom density] values
`there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures... [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e.g.,
`increase the pulse length and/or pressure, so as to trigger
`Kudryavtsev’s fast stage of ionization. One of ordinary skill would
`have been motivated to use Kudryavtsev’s fast stage of ionization in
`Wang so as to increase plasma density and thereby increase the
`rate. Further, use of Ku avtsev’s fast sta
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`would have been a combination of old elements that yielded
`predictable results of increasing plasma density and multi-step
`ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, 1] 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`
`
`2. The sputtering source of claim The combination of Wang and Kudryavtsev discloses the power
`1 wherein the power supply
`supply generates a constant power.
`generates a constant power.
`
`See claim 1.
`
`Wang at Figs. 1, 6, 7
`
`Fig. 6 shows constant power for the duration of the pulse rw.
`
`3. The sputtering source of claim The combination of Wang with Kudryavtsev discloses the power
`1 wherein the power supply
`supply generates a constant voltage.
`generates a constant voltage.
`
`See claim 1.
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train
`of negative voltage pulses.”)
`
`Wang at Fig. 7.
`
`One of ordinary skill would have understood that a constant voltage
`would produce pulse Pp of constant power for at least a portion of the
`pulse rw.
`
`4. The sputtering source of claim The combination of Wang and Kudryavtsev discloses the electric field
`1 wherein the electric field
`comprises a quasi-static electric field.
`comprises a quasi-static electric
`field.
`
`See evidence cited in claim 1.
`
`’759 Patent, 7:57-60 (“By quasi-static electric field, we mean an
`electric field that has a characteristic time of electric field variation
`
`that is much reater than the collision time for electrons with neutral
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`gas particles”)
`
`Wang at 4:5-7 (“A sputter working gas such as argon is supplied fiom
`a gas source 32 through a mass flow controller 34 to a region in back
`of the grounded shield 24.”).
`
`Wang at 7:61-62 (“pulsed DC power supply 80 produces a train of
`negative voltage pulses”)
`
`Wang at 5:45-48 (“[The pulse width Tw] should be at least 50 us.”)”
`
`Fu at 1:46-48 (“Although the base pressure can be held to about 10'7
`Torr or even lower, the pressure of the working gas is typically
`maintained at between about 1 and 1000 mTorr.”).
`
`Background:
`
`Raizer at 1 1, §2.1.4 (“The collision frequency vm is proportional
`to. . .pressure p.”).
`
`Raizer at Table 2.1 (“vm/p = 5.3 x 109 s'1 Torr'l”)
`
`5. The sputtering source of claim The combination of Wang and Kudryavtsev discloses the electric field
`1 wherein the electric field
`comprises a pulsed electric field.
`comprises a pulsed electric field.
`
`See evidence cited in claim 1.
`
`
`
`Wang at Figs. 6, 7
`
`Wang at 7:61-63 (“The pulsed DC power supply 80 produces a train
`of negative voltage pulses. . .”)
`
`6. The sputtering source of claim The combination of Wang and Kudryavtsev discloses the rise time of
`1 wherein the rise time of the
`the voltage pulse is chosen to increase the ionization rate of the
`voltage pulse is chosen to
`excited atoms in the weakly-ionized plasma.
`increase the ionization rate of the
`
`excited atoms in the weakly-
`ionized plasma.
`
`See evidence cited in claim 1.
`_
`_
`_
`_
`Wang at 5:23-26 (“The illustrated pulse form is idealized. Its exact
`shape depends on the design of the pulsed DC power supply 80, and
`significant rise times and fall times are expected”).
`
`7. The sputtering source of claim The combination of Wang and Kudryavtsev discloses the weakly-
`1 wherein the weakl -ionized
`ionized lasma reduces the
`'
`of develo in; an electrical
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1—10, 12—15, 19-26, 28-
`
`31, 34, 36, 37, 40—43 and 46-48
`
`Wang in view of Kudryavtsev
`
`plasma reduces the probability of
`developing an electrical
`breakdown condition between
`
`the anode and the cathode
`
`assembly.
`
`8. The sputtering source of claim
`1 wherein the ions in the
`
`strongly-ionized plasma impact
`the surface of the sputtering
`target in a manner that causes
`substantially uniform erosion of
`the sputtering target.
`
`9. The sputtering source of claim
`1 wherein the strongly-ionized
`plasma is substantially uniform
`proximate to the sputtering
`target.
`
`breakdown condition between the anode and the cathode assembly.
`
`See evidence cited in claim 1.
`
`Wang at 73-49 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber... The
`initial plasma ignition needs be performed only once and at much
`lower power levels so that particulates produced by arcing are much
`reduced.”).
`
`The combination of Wang and Kudryavtsev discloses the ions in the
`strongly-ionized plasma impact the surface of the sputtering target in a
`manner that causes substantially uniform erosion of the sputtering
`target.
`
`See evidence cited in claim 1.
`
`Wang at 4:49-51 (“The rotation scans the HDP region 42 about the
`face of the target 14 to more evenly erode the target 14 and to produce
`a more uniform sputter coating on the wafer 20.”)
`
`Wang at 7:28-30 (“Instead, the application of the high peak power Pp
`instead quickly causes the already existing plasma to spread and
`increases the density of the plasma.”).
`
`The combination of Wang and Kudryavtsev discloses the strongly-
`ionized plasma is substantially uniform proximate to the sputtering
`target.
`
`See evidence cited in claim 1.
`
`See evidence cited in claim 8.
`
`See evidence cited in claim 1.
`
`10. The sputtering source of
`claim 1 further comprising a
`substrate support that is
`positioned in a path of the
`sputtering flux.
`
`The combination of Wang with Kudryavtsev discloses a substrate
`support that is positioned in a path of the sputtering flux.
`
`‘759 Patent at 3: 10-12 (“FIG. 1 shows a cross-sectional view of a
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1—10, 12—15, 19-26, 28-
`
`31, 34, 36, 37, 40—43 and 46-48
`
`Wang in view of Kudryavtsev
`
`known magnetron sputtering apparatus 100...”)
`
`‘759 Patent at 3:44-46 (“substrate 134 is positioned in the vacuum
`chamber 104 on a substrate support 135 to receive the sputtered target
`material 1 16.”)
`
`Wang at Fig. 1
`
`Wang at 3:63-66 (“pedestal electrode 18 [that] supports a wafer 20 to
`be sputter coated in planar opposition to the target 14 across a
`processing region 22.”).
`
`The combination of Wang with Kudryavtsev discloses a bias voltage
`power supply that applies a bias voltage to a substrate that is
`positioned on the substrate support.
`
`See evidence cited in claim 10.
`
`Wang at 4:31-34 (“[A]n RF bias power supply is connected to the
`pedestal electrode 18 to create a negative DC self-bias on the wafer
`20-77)
`
`12. The sputtering source of
`claim 10 further comprising a
`bias voltage power supply that
`applies a bias voltage to a
`substrate that is positioned on
`the substrate support.
`
`source comprises an electrode.
`
`13. The sputtering source of
`claim 1 wherein a volume
`
`between the anode and the
`
`The combination of Wang and Kudryavtsev discloses a volume
`between the anode and the cathode assembly is chosen to increase the
`ionization rate of the excited atoms in the weakly-ionized plasma.
`
`cathode assembly is chosen to
`increase the ionization rate of the
`
`excited atoms in the weakly-
`ionized plasma.
`
`See evidence cited in claim 1.
`
`If one of ordinary skill building a system according to Wang did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e. g.,
`increase the amplitude or width of Wang’s pulse Pp, so as to trigger
`Kudryavtsev’s fast stage of ionization. Such ionization would occur
`in the volume between Wang’s anode and cathode. One of ordinary
`skill would have been motivated to use Kudryavtsev’s fast stage of
`ionization in Wang so as to increase plasma density and thereby
`increase the sputtering rate. Further, use of Kudryavtsev’s fast stage
`in Wang would have been a combination of old elements that yielded
`predictable results.
`
`14. The sputtering source of
`claim 1 wherein the ionization
`
`The combination of Wang and Kudryavtsev discloses the ionization
`
`source comprises an electrode.
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`15. The sputtering source of
`claim 1 wherein the ionization
`source comprises a DC power
`supply that generates an electric
`field proximate to the anode and
`the cathode assembly.
`
`19. The sputtering source of
`claim 1 wherein the sputtering
`target is formed of a material
`chosen from the group
`comprising a metallic material, a
`polymer material, a
`superconductive material, a
`magnetic material, a non-
`magnetic material, a conductive
`material, a non-conductive
`material, a composite material, a
`reactive material, and a
`refractory material.
`
`[20pre.] A method of generating
`sputtering flux, the method
`comprising:
`
`See evidence cited in claim 1.
`
`Wang at 7:57-59 (“A variable DC power supply 100 [being]
`connected to the target 14.”).
`
`The combination of Wang and Kudryavtsev discloses the ionization
`source comprises a DC power supply that generates an electric field
`proximate to the anode and the cathode assembly.
`
`S66 evidence cited in claim 1.
`_
`_
`Wang at 7:57-59 (“A variable DC power supply 100 [being]
`connected to the target 14.”).
`
`The combination of Wang and Kudryavtsev discloses the sputtering
`target is formed of a material chosen from the group comprising a
`metallic material, a polymer material, a superconductive material, a
`magnetic material, a non-magnetic material, a conductive material, a
`non-conductive material, a composite material, a reactive material,
`and a refractory material.
`
`See evidence cited in claim 1.
`
`Wang at 5 :7-11 (“the deposition rate with the torpedo magnetron 60
`varies as a firnction of DC target power for both copper neutrals, as
`shown by line 74, and for copper ions, as shown by line 76.”)
`
`The combination of Wang and Kudryavtsev discloses a method of
`generating sputtering flux.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron”).
`
`
`
`[20a] ionizing a feed gas to
`generate a weakly-ionized
`plasma proximate to a sputtering
`target;
`
`The combination of Wang and Kudryavtsev discloses ionizing a feed
`gas to generate a weakly-ionized plasma proximate to a sputtering
`target.
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is supplied fiom
`a gas source 32. . ..”).
`
`Wan at 4:20-21 “. .. a reactive as, for examle nitro
`
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`to the processing space 22. . ..”).
`
`[20b.] generating a magnetic
`field proximate to the weakly-
`ionized plasma, the magnetic
`field substantially trapping
`electrons in the weakly-ionized
`plasma proximate to the
`sputtering target; and
`
`Wang at 7:17-31 (“The background power level P3 is chosen to
`exceed the minimum power necessary to support a plasma...
`[T]he
`application of the high peak power Pp quickly causes the already
`existing plasma to spread and increases the density of the plasma”)
`
`Wang at 7:19-25 (“Preferably, the peak power Pp is at least 10 times
`the background power PB
`and most preferably 1000 times to
`achieve the greatest effect of the invention. A background power P3
`of 1 kW [causes] little if any actual sputter deposition”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP). . .”)
`
`The combination of Wang and Kudryavtsev discloses generating a
`magnetic field proximate to the weakly-ionized plasma, the magnetic
`field substantially trapping electrons in the weakly-ionized plasma
`proximate to the sputtering target.
`
`‘759 Patent at 3: 10-12 (“FIG. 1 shows a cross-sectional View of a
`known magnetron sputtering apparatus 100...” that has a magnet
`126.”)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. I] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest
`in a confinement region 142. . ..”)
`
`Wang at Fig. 1.
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`
`
`
`[20c.] applying a voltage pulse
`to the weakly-ionized plasma, an
`amplitude and a rise time of the
`voltage pulse being chosen to
`increase an excitation rate of
`ground state atoms that are
`present in the weakly-ionized
`n lasma to create a multi-ste n
`
`voltage pulse to the weakly-ionized plasma, an amplitude and a rise
`time of the voltage pulse being chosen to increase an excitation rate of
`ground state atoms that are present in the weakly-ionized plasma to
`create a multi-step ionization process that generates a strongly-ionized
`plasma, which comprises ions that sputter target material, fiom the
`weakly-ionized plasma, the multi-step ionization process comprising
`exciting the round state atoms to enerate excited atoms, and then
`
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`

`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`ionizing the excited atoms within the weakly-ionized plasma without
`forming an arc discharge.
`
`ionization process that generates
`a strongly-ionized plasma, which
`comprises ions that sputter target
`material, from the weakly-
`‘759 Patent at Fig. 5
`ionized plasma, the multi-step
`Wang at Figs. 6, 7-
`ionization process comprising
`14
`exciting the ground state atoms W—
`to generate excited atoms, and
`then ionizing the excited atoms
`within the weakly-ionized
`plasma without forming an arc
`discharge.
`
`
`
`30
`
`SUPPLY
`
`W in»?
`
`FIG. 7
`
` £1100
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train
`of negative voltage pulses”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level Pp is at least 10
`times the background power level PB,
`most preferably 1000 times
`to achieve the greatest effects of the invention. A background power
`P3 of 1 kW will typically be sufficient. . .”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP
`magnetron can maintain a plasma at a lower power and lower pressure
`than can a larger stationary magnetron. However, it is possible to
`combine highly ionized sputtering during the pulses With significant
`neutral sputtering during the back ground period.”).
`
`Wang at 73-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber”)
`
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`

`EXHIBIT A.06
`
`U.S. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`
`31, 34, 36, 37, 40—43 and 46-48
`
`Wang in view of Kudryavtsev
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed
`only once and at much lower power levels so that particulates
`produced by arcing are much reduced”).
`
`Wang at 7: 13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6... As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform. . .”).
`
`Kudryavtsev at 34, right col, 1] 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas breakdown,
`laser sparks, etc.”)
`
`FIG. 1. Eilngmm showing the 10!.“va smer of (hr. ell-cl
`fluxes In (cm: of (he ammic energy levrir for (hr tlow
`and fail (h) Hagar. The width of (Ix: arrow: indicates t
`magnitude M the electron flux.
`‘l'izu horizontal arrow:
`the dlffiuinn fiuxc: of ulccmms and excited atoms veac
`the ml]: of the discharge tube.
`
`Kudryavtsev at Fig. 1
`
`
`
`
`
`3752727.?3’39’15
`
`E/n,, Td
`FIG. 6. The behavior of “e in the bulk of an argon discharge. 1) neg/111 =
`10—3; 2) 10'1. Stepwise ionization predominates in region 1. direct ioniza-
`tion processes predominate in region [1, and “s does not increase in region
`111.
`
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`

`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`Kudryavtsev at 3 1, right col, 1] 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents
`in terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 3 1, right col, 1] 6 (“For nearly stationary n2 [excited
`atom density] values
`there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures... [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, eg.,
`increase the pulse length and/or pressure, so as to trigger
`Kudryavtsev’s fast stage of ionization. One of ordinary skill would
`have been motivated to use Kudryavtsev’s fast stage of ionization in
`Wang so as to increase plasma density and thereby increase the
`sputtering rate Further, use of Kudryavtsev’s fast stage in Wang
`would have been a combination of old elements that yielded
`predictable results of increasing plasma density and multi-step
`ionization.
`
`
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, 1] 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`21. The method of claim 20
`wherein the applying the electric
`field comrises a a l in
`
`The combination of Wang and Kudryavtsev discloses applying the
`electric field comprises a applying a quasi-static electric field.
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`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`quasi-static electric field.
`
`See evidence cited in claim 20.
`
`’759 Patent, 7:57-60 (“By quasi-static electric field, we mean an
`electric field that has a characteristic time of electric field variation
`
`that is much greater than the collision time for electrons with neutral
`gas particles”)
`
`Wang at 4:5-7 (“A sputter working gas such as argon is supplied fiom
`a gas source 32 through a mass flow controller 34 to a region in back
`of the grounded shield 24.”).
`
`Wang at 7:61-62 (“pulsed DC power supply 80 produces a train of
`negative voltage pulses.”)
`
`Wang at 5:45-48 (“[The pulse width rw] should be at least 50 us.”)”
`
`Fu at 1:46-48 (“Although the base pressure can be held to about 10'7
`Torr or even lower, the pressure of the working gas is typically
`maintained at between about 1 and 1000 mTorr.”).
`
`Background:
`
`Raizer at 1 1, §2.1.4 (“The collision frequency vm is proportional
`to. . .pressure p.”).
`
`Raizer at Table 2.1 (“vm/p = 5.3 x 109 5'1 Torr”)
`
`The combination of Wang and Kudryavtsev discloses applying the
`electric field comprises applying a substantially uniform electric field.
`
`See evidence cited in claim 20.
`.
`Wang at Fig. 1.
`
`It would have been obvious to a person of ordinary skill in the art to
`modify Wang such that applying the electric field would include
`applying a substantially uniform electric field. For example, a person
`of ordinary skill could modify Wang’s anode to form a parallel plate
`capacitor with the cathode/target electrode 14.
`
`
`
`22. The method of claim 20
`wherein the applying the electric
`field comprises applying a
`substantially uniform electric
`field.
`
`23. The method of claim 20
`wherein the applying the electric
`field comprises applying an
`electrical ulse across the
`
`The combination of Wang and Kudryavtsev discloses applying the
`electric field comprises applying an electrical pulse across the weakly-
`ionized plasma.
`
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`

`

`EXHIBIT A.06
`
`US. Patent No. 7,147,759
`
`Claims 1-10, 12-15, 19-26, 28-
`31, 34, 36, 37, 40-43 and 46-48
`
`Wang in view of Kudryavtsev
`
`weakly-ionized plasma.
`
`See evidence cited in claim 20.
`
`Wang at Figs. 6, 7
`
`Wang at 7:61-63 (“The pulsed DC power supply 80 produces a train
`of negative voltage pulses. . .”)
`
`The combination of Wang and Kudryavtsev discloses selecting at least
`one of a pulse amplitude and a pulse width of the electrical pulse that
`increases an ionization rate of the strongly-ionized plasma.
`
`See evidence cited in claim 23-
`_
`Wang at F1gs. 6, 7-
`
`Wang at 5:23-26 (“The illustrated pulse form is idealized. Its exact
`shape depends on the design of the pulsed DC power supply 80, and
`significant rise times and fall times are ex