08/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`JUN 1 4 2004
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`loos/026
`
`RECEIVED
`W FAX cameo
`
`Attorney Docket No.: ZON-OOI
`
`PATENT
`
`[\T'TTJH/"_\fl n
`:1“:
`“:3 In
`
`3.15mi,
`
`-
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL NO;
`FILING DATE:
`TITLE:
`
`1753
`GROUP No.2
`10/065,277
`McDonald, Rodney G.
`EXAMINER:
`September 30, 2002
`HIGH—POWER PULSED MAGNETRON SPUTI‘ERTNG
`
`Commissioner for Patents
`Alexandria, Virginia 22313-1450
`
`AMENDMENT AND RESPONSE
`
`Sir:
`
`The following amendments and remarks are responsive to the Office Action mailed on
`January 15, 2004 in the above-identified patent application. Entry and consideration of the
`following amendments and remarks, and allowance ofthe claims, as presented, are respectfully
`requested. A Petition for a two—month extension oftime, up to and including Tuesday, June 15,
`2004 is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`the additional claims fee, and any other proper fees to Attorney's Deposit Account No. 501211.
`
`Please enter the following amendments and consider the remarks that follow.
`
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`INTEL 1407
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`03/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`.007/028
`
`Amendment and Response
`Applicant: Chis’cyakov
`Serial No.2 10l065,739
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 4, 5, 6, 8, 12, 16, 19, 21, 25, and 27-30, cancel claims 3 and 18
`
`WithOut prejudice, and add claims 31-39 as follows.
`
`i.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly-ionized plasma proximate to the anode and
`
`the cathode assembly; and
`
`a power supply that generates a voltagepulse chat—predetees-an—eleetFiC—field-bemeen the
`anode and the cathode assemblyfihe—eleetrie—field mil createjiag a strongly-ionized
`
`plasma from the weakly-ionized plasma, an amplitude and a rise time of the voltage pulse
`being chosen to increaseWW 3 estimate—density of ions
`
`in the stron gly—ionized plasmaWWW generate
`
`Sufficient thermal energy in the sputtering target to cause a sputtering yield of the
`
`sputtering target to be non-linearly related to a temperature of the sputtering target.
`
`2.
`
`(original) The Sputtering source of claim 1 wherein the electric field comprises a quasi—
`
`3.
`
`4.
`
`static electric field.
`
`(cancelled).
`
`(currently amended) The sputtering source of claim 3 I further comprising a gas__flow
`e____ontroller exehmge—meane—for—eaeehangmg that coutrols a flow of feed gas 39 theegggngly-
`ionigeeg plasma, the additional feed gas allowing additional p_ower to be absorbed by the
`
`
`
`
`WlmljfiAilli'lLu ; "‘
`
`
`Weeef—thespufiefimg-mrget-thereby generating additional thermal
`
`energyr in the sputtering target.
`
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`08/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`'003/023
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 6. 7, 20, 34, and 40 and add claims 41-48 as follows.
`
`1.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode and—fermiog—a—gap
`
`mas-Ween, the cathode assembly including a sputtering target;
`
`c)
`
`an ionization source that generates a weakly-ionized plasma prOxim ate to the
`
`anode and the cathode assembly;
`
`d)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plasma, the magnetic field substantially trapping electrons in the weakly-
`
`ionizcd plasma proximate to the sputtering target; and
`
`e)
`
`a power supply gppepspp'g a voltage pulse that produces an electric field between
`
`the cathode assembly and the anode, aeroso—t—he—gepfihe-eleetfie—field an ampljmgq
`
`pig 3 rise time of the voltage pulse being chosen to increase an excitation rate of
`
`und state at m
`
`at a
`
`c t '
`
`c wcakl —i0ni7.ed lasma to create a multi—
`
`step ionization process that generates a stron gly—ioriized plasma from the weakly-
`
`jpnjzfl plma, the multi-stgp— ionization process comprising exciting the gound
`
`state atoms to generate generating excited atoms and then i-B—l-he—Wteaiel-y-refii-ZGE}
`
`secondary—electrons ionizing the excited atoms within the weakly-ionized plasma
`
`WW create ions that impaet—a
`
`sorfaee—of—the sputter target material from the sputtering targetg-to-generate
`
`sputtang—fl-we:
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
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`06/14/2004 MUN 22:41 FAX 781 271 1527 KURT RAUSCEENBACH
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`[ENDS/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,277
`Page 3 of 20
`
`3.
`
`(original) The sputtering so urce of claim 1 wherein the pewer supply generates a
`
`constant voltage.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a quasi—
`
`static electric field.
`
`(original) The Sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(currently amended) The sputtering source of claim 1 wherein a the rise time of the
`
`voltage pulse electric-field is chosen to increase the ionization rate of the excited atoms in
`
`the weakly—ionized plasma.
`
`(currently amended) The sputtering source of claim 1 wherein the weakly~ionizcd
`
`ELM gas reduces the probability of developing an electrical breakdown condition
`
`between the anode and the cathode assembly.
`
`(original) The Sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma. impact the surface of the sputtering target in a manner that causes substantially
`
`uniform erosion of the sputtering target.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of the sputtering flux.
`
`ll.
`
`(original) The sputtering source of claim 10 further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`12.
`
`(original) The sputtering source of claim 10 further camprising a bias voltage power
`
`supply that applies a bias voltage to a Substrate that is positioned on the substrate support.
`
`PAGE 9i26 ' RCVD AT 511412004 10:56:05 PHI [Eastern DayllghtTuner SVRIUSPTO-EFXRF-llfl ‘ DNIS:8?29305 ‘ CSID2781 lil 1527’ DURilTlON (mm/stun
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`08/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`.010/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 4 of 20
`
`13.
`
`14.
`
`15.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
`
`power supply that generates an electric field proximate to the anodc and the cathode
`
`assembly.
`
`16.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`17.
`
`(original) The sputtering source ol‘ claim 1 wherein the ionization source is chosen From
`
`the group comprising a UV source, an X-ray source, an electron beam source, and an ion
`bcam source.
`
`18.
`
`(original) The sputtering source of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`19.
`
`(original) The sputtering scurce of claim 1 wherein the sputtering target is formed of a
`material chosen from the group comprising a metallic material, a polymer material. a
`
`superconductive material, a magnetic material, a non-magnetic material, a conductive
`
`material, a non-conductive material, a composite material, a reactive material, and a
`
`rcfractory material.
`
`20.
`
`(currently amended) A method of generating sputtering flux, the method comprising:
`
`a)
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
`PAGE 1M5 ‘ RCVD AT H14l20fl4 10:55:05 PM [Eastern Daylight Timel’ SURIUSPTO-EFXRF-flfl‘ DNIS:3729305 * CSIDJM 271 1527‘ DURATION (mm-ss):03-12
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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`lEmil/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,277
`Page 5 of 20
`
`b)
`
`generating a magnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasrna proximate to
`
`the sputtering target; and
`
`c)
`
`applying era-eleetfier-fi-eld g yoltage pulse to the weakly;ionized plasma, an
`
`amplitude and a rise time of the voltage pulse being chosen t9 ipgmgge gg
`
`excitatign rate of gr_ound state atoms that are present in the weakly-ionized plasma
`
`1 c ' e a
`
`t'-s
`
`ionization mcess that eneratcs a stron I —ionized lasma
`
`fiom the weakly—iOnized plasma, the mum-step ionizatjgn process comprising
`
`exciting the mund state atoms to generate excited fleet-excites atoms and then
`
`
`
`electrons-ionizing the excited atoms within the weakly-ionized plasma to 4hereby
`
`
`
`mirage-strangly-ienized-pleema—hmg_create ions that mpaet—a-stteFaeve-ef—t-he
`
`sputter target material fi‘om the Sputtering target4 to—genesate—sputtefing—flnat:
`
`21.
`
`(original) The method of claim 20 wherein the applying the electric field comprises a
`
`applying a quasi-static electric field.
`
`22.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`23.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the weakly-ionized plasma.
`
`24.
`
`(original) The method of claim 23 further campfising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`25.
`
`(original) The method of claim 23 further cemprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that reduces a probability of
`
`developing an electrical breakdOvvn condition proximate to the sputtering target.
`
`PAGE 11m ‘ RCVD AT H14l2004 10:56:95 PM [Eastern Daylight Time] * SVR:USPTO-EFXRF-1l0* DNISISTNM" CSID:?81 271 1521* DURATION (mm-531:93-12
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`08/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
`
`IOU/026
`
`Amendment and Response
`Applicant; Chistyakov
`Serial No: 10/065,277
`Page 6 of 20
`
`26.
`
`27.
`
`(Original) The method of claim 23 further comprising selecting at least one of a pulse
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface of the sputtering target.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`a current density that is greater than lAlcmz.
`
`28.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`29.
`
`30.
`
`(on'ginal) The method of claim 23 wherein the electrical pulse comprises a pulse train
`having a repetition rate that is substantially between 0,1Hz and lkHz,
`
`(original) The method of claim 20 thrcin the ions in the strongly-ionized plasma
`impact the surface of the sputtering target in a. substantially uniform manner.
`
`31.
`
`(original) The method of claim 20 wherein the strongly-ionized plasma is Substantially
`
`uniform proximate to the sputtering target.
`
`32.
`
`33.
`
`34.
`
`(original) The method of claim 20 wherein the peak plasma density of' the weakly-
`ionizcd plasma is less than about 1012 cm".
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`ionizcd plasma is greater than about 1012 am}.
`
`(currently amended) The method of claim 20 further comprising forming a film flora-the
`sputteriagfiuae on a surface of a substrate from the material sputtered from the muttering
`
`target.
`
`35.
`
`(original) The method of claim 34 further comprising controlling a temperature ofthc
`
`film.
`
`36.
`
`(original) The method of claim 34 llurther comptising applying a bias voltage to the film.
`
`PAGE 12W RCVD AT 5l1ii200410:55:05 PM [Eastern Daylight Timer SVR:USPTO-EFXRF-1IO‘ DNIS:8?29306 ' CSID:781 271 152?‘ DURATION (mm-ss):08-12
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`@013/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serinle 10/065,277
`Page 7 of 20
`37.
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electric field.
`
`38.
`
`39,
`
`(original) ’1‘he method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electrode that is adapted to emit electrons.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`
`an ion beam source.
`
`40.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`6)
`
`means [or ionizing a feed gas to generate a weakly-iOnized plasma proximate to a
`
`sputtering target;
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping electrons in the weakly-ionized plasma
`
`proximate to the sputtering target; and
`
`means fer applying aa-eleetr-ie-fielé a. vgltage pulse to the weakly-ionized plasma;
`an amplitude and a rise time 01' the voltage pulse being chosen to increase an
`excitation rate of ground state atoms that are present in the weaklxvionized plasma
`to create a. mum-step ionization process that generates a strongly-ionized plasma
`from the weak] -ionizcd lasma the multi-ste ionization
`c s
`'
`'
`
`exciting the glow-id state atoms to generate excited that—easeites atoms and then
`
`electrons-ionizing the excited atoms within the weakly-ionized plasma to thereby
`WWW‘create ions that WWI-the
`Sputter target material figm the sputtering target;W
`
`41.
`
`(new) The sputtering source of claim 1 wherein the cathode assembly and the anode are
`positioned so as to form a gap therebetween,
`
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`08/14/2004 MUN 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`@014/028
`
`Amendment and Response
`Applicant: Chistynkov
`Serial No.: 10/065,277
`Page 8 of 20
`
`42.
`
`(new) The sputtering source of claim l wherein the weakly-ionized plasma is generated
`
`from a feed gas that comprises the ground state atoms.
`
`43.
`
`(new) The sputtering source of claim 1 wherein the excited atoms within the weakly-
`
`iom'zed plasma are ionized by electrons to create the ions that sputter material from the
`
`sputtering target.
`
`44.
`
`(new) The sputtering source of claim 1 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and NOV/uses.
`
`45.
`
`(new) The sputtering source of claim 1 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 30kV.
`
`46.
`
`(new) The method of claim 20 wherein the weakly-ionized plasma is generated from a
`
`feed gas that comprises the ground state atoms.
`
`47.
`
`(new) The method of claim 20 wherein a duration of the weakly-ionized plasma is
`
`approximately between one microsecOnd and one hundred seconds.
`
`48.
`
`(new) The method of claim 20 wherein the ionizing the excited atoms within the weakly—
`
`ionized plasma to create ions that Sputter material fi'omthclsputtenng target comprises
`
`ionizing the excited atoms with electrons.
`
`49.
`
`(new) The method or claim 20 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and NOV/rises.
`
`50.
`
`(new) The method of claim 20 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 301-:V.
`
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`.015/026
`
`Amendment and Response
`Applicant: Cbislyakcw
`Serial No.: 10/065,277
`Page 9 of 20
`
`Bending Claims:
`
`REMARKS
`
`Claims 1-50 are currently pending in the present application. Claims 1, 6, 7, 20, 34,
`
`and 40 are amended by the present Amendment. Claims 41-50 are added by the present
`
`Amendment. No new matter is added by these amendments. Upon entry of the present
`
`Amendment, reconsideration of claims 1-40 and consideration of new claims 41-50 is
`
`respectfully requested.
`
`gejections under 35 U.S.C. §102§b1 As Being Anticipated by Kouznetsov:
`
`Claims 1. 5-10. 13. 14. 16, 19, 20, 22—31, 34, 37, 38, and 40 are rejected under 35 U.S.C.
`
`§102(b) as being anticipated by Kouznetsov (W098/40532) (hereinafter "Kouznetsov’j.
`
`Independent claims 1, 7, 20 and 40 are herein amended to more clearly recite the invention. No
`
`new matter is added by these amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10I 13, 14, 16, and 12
`
`The Applicant respectful] y submits that Kouznetsov does not deScribe each and every
`
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`
`recite a magnetically enhanced sputtering source having a power supply that generates a voltage
`
`pulse that produces an electric field between an anode and a cathode assembly. An amplitude
`
`and a rise time of the voltage pulse is chosen to increase the excitation rate of ground state atoms
`
`that are present in the weakly-ionized plasma to create a multisstep ionization process. The
`
`multi-step ionization process includes exciting the ground state atoms to generate excited atoms,
`
`and then ionizing the excited atoms in the weakly—ionized plasma. This amendment is supported
`
`by the ori ginally-filed specification of the present application. See, for example, paragraphs 59-
`
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
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`IBIS/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,277
`Page 10 of 20
`
`69 ofthe originally-filed specification. The Applicant submits that no new matter is added by
`
`the amendments to independent claim 1.
`
`The Applicant believes that there is no description in Kouznetsm of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase an
`excitation rate of ground state atoms that are present in a weakly-ionized plasma to generate a
`multi-step ionization process.
`instead, the Applicant believes that the pulsed power source
`described in Kouznetsov generates a gas having a fully ionized state using a single-step
`~ ionization process. According to Kouznetsov, the pulsed power source used in his apparatus
`provides “pulses in such a way, i.e. that so much power is developed in each pulse. that in the
`application of such a pulse, For a very short time during the start ofthe pulse, the state ofthe gas
`located at the region in which the electrons are trapped by the magnetic field will very rapidly
`reach a fully ionized state. . .” See, for example, Kouznetsov page 5, lines 1-4. The application
`of a very large voltage pulse (2,000 Volts) having a fast rise time appears to fully ionize the gas
`by direct ionization From electrons located in the region having crossed electric and magnetic
`fields. See, for example, Kouznetsov page 12, lines 22—26.
`
`The Applicant respectfully submits that there is no description in Kouznetsov ot‘ a power
`supply that generates a voltage pulse which creates a multi-step ionization process that includes
`generating excited atoms from ground state atoms that are present in the weakly ionized plasma,
`and then ionizing the excited atoms in the weakly-ionized plasma as claimed in amended claim
`1. Instead, the Applicant believes that the ionization process described in Kouzznetsov is a
`single-step ionization process known as direct ionization by electron impact.
`
`In view of the above remarks, the Applicant respectfully submits that Kouznetsov does
`not describe each and every element of independent claim 1 as currently amended, either
`expressly or inherently. Therefore, the Applicant submits that Kouznctsov does not anticipate
`independent claim 1 as currently amended under 35 U.S.C. §102(b). Thus, the Applicant
`submits that independent claim 1 as currently amended is allowable. The Applicant also submits
`that dependent claims 5-10. 13. 14, 16, and 19 are allowable as depending from an allowable
`
`base claim.
`
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`08/14/2004 MDN 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10l065,277
`Page 1 l of 20
`Independent Qlaim 29 and Dgpgmggt Claims 22-31, 34, 37, and 38
`
`lair/023
`
`eclfully submits that Kouznetsov does not describe each and every
`The Applicant rcsp
`laitn 20 is herein ammded
`element of independent claim 20 as currently amended.
`lndependcnt c
`to recite the step of applying a voltage pulse to the weakly-ionized plasma. An amplitude
`tats atoms in
`ltage pulse are chosen to increase an excitation rate of ground 5
`rise time of the vo
`step ionization
`step ionization process. The multi-
`the weakly-ionized plasma to create a multi-
`y-ioriized plasma, and then
`process generates excited atoms from ground state atoms in the weakl
`s the excited atoms in the weakly—ionized plasma. This amendment is supported by the
`ionizc
`led specification ofthe present application. See, for example, paragraph 59-69 ofthe
`originally-ii
`the amendments to independent claim
`originally-filed specification. No new matter is added by
`20.
`
`The Applicant believes that there is no description in Kcuznetsov ofa method of
`step ionization process as claimed in
`generating a strongly-ionized plasma using a multi-
`the Applicant believes that KouznetsoV
`amended claim 20. Instead, as previously discussed,
`ess whereby the application of a very large voltage pulse.
`describes a single-step ionization proc
`-26). The‘
`as having a fully ionized state (See page 12, lines 22
`din Kouznetsov ionizcs the gas by direct
`
`having a fast rise time creates a g
`Applicant believes that the large voltage pulse describe
`ionization from electrons located in the region ofcrossed electric and magnetic fields.
`
`In View ofthe above remarks, the Applicant respectfully submits that Kouznetsov
`and every element ofindependent claim 20 as currently amended,
`does not describe each
`the Applicant submits that Kouzuetsov does not
`either expressly or inherently. Therefore,
`its that
`dent claim 20 as currently amended. Thus, the Applicant subrn
`anticipate indepen
`31, 34, 37, and 38 are allowable
`amended independent claim 20 and dependent claims 22—
`
`under 35 use. §l02(b).
`
`Reiecgigng under 35 U.S.C. §102§h2 as Being Anticlpated by Mozgrin:
`435, 27-29. 32, 33, 3’7, and 40 are rejected under 35
`“High Current Low—Pressure
`
`Claims 1, 4,5, 7, 13, 14,16,19
`U.S.C. §102(b) as being anticipated by Mozgrin et a1. entitled
`QuasivStationary Discharge in 9. Magnetic Field: EXperimemal Resear
`
`ch‘ ’, Plasma Physics
`
`PAGE1ll26‘RCVDATfillmflM10:55:05PM[EasternDaylightTime]‘SVEUSPTO-EFXRF-llfl‘DNISZSTZQBOG"CSlD:?81 271 152?‘DURATION[mm-sslmt-n
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`.013/025
`
`Amendment and Response
`Applicant: Chistyakov
`SerialNo.: 10/065,277
`Page 12 of 20
`
`independent claims I, 20
`Reperts, Vol. 21, No. 5, 1995. pp. 400-409 (hereinafter “Mozgrin”).
`and 40 are herein amended to more clearly recite the invention. No new matter is added by these
`
`amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`ngpendent Claim 1 and Dependent Claims 4, 5, 7, 13, M, 16, and 19
`
`The Applicant respectfully submits that Mozgn'n does not describe each and every
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`recite a power supply generating a voltage pulse that produces an electric field between a
`cathode assembly and an anode. The voltage pulse has an amplitude and a rise time that are
`chosen to increase a rate of excitation of ground state atoms present in the weakly-ionized
`plasma to create a multi—step ionization process. The multi-step ionization process generates i
`strongly-ionized plasma from the weakly-ionized plasma by first exciting ground state atoms to
`generate excited atoms, and then by ionizing the excited atoms in the weakly-ionized plasma-
`This amendment is supported by the originally-filed specifieation of the present application.
`See. for example, paragraphs 59-69 of the Originally—filed specification. The Applicant submits
`that no new matter is added by the amendments to independent claim 1.
`
`The Applicant believes that there is no description in Mozgrin of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase the
`excitation rate of ground state atoms present in the weakly-ionized plasma to create a multi-
`step ionization process. Instead, the Applicant believes that Mozgrin describes a pulsed
`diSCharge supply unit that generates a plasma with a prior art direct ionization process using
`
`very high-power pulses.
`
`The Applicant believes that the quasi-stationary discharge described in Mozgrin is
`formed with a prior art ionization process known as direct ionization by electron impact and
`
`PAGE 18W RCVD AT 6l14l2004 10:56:05 PM [Eastern DaylightTime] 'SVR2USPTO-EFXRF-1ifl ' DNlS:87293llfi* CSID:781 271 1527‘ DURATION(mm-ss):08-12
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`

`_03/14/2004 MUN 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`'019/026
`
`Amendment and Response
`Applicant: Chislyakov
`Serial No.: 10/065,277
`Page 13 of 20
`
`does not use the multi-step ionization process of the present invention. For example, the
`current and voltage characteristics (CVC) shown in FIG. 4 of Mozgrin indicate to the
`Applicant that the quasi-stationary discharge described in Mozgn'n is formed by direct
`ionization. The CVC shown in FIG. 4 ofMozgrin includes four parts.
`
`Part 1 of the CVC shown in FIG. 4 of Mozgrin is a low current (0.2A) discharge
`regime that is a pro—ionization stage of the quasi-stationary discharge. The pre-ionization
`stage is generated using a high-voltage power supply unit that produces 21 higin-voltage, low-
`current discharge between two electrodes to create a pro-ionized plasma. The pre-ionized
`plasma includes ions that are generated by a typical direct ionization process.
`
`Part 2 of the CVC shown in FIG. 4 of Mozgrin is a high—current, high-voltage
`discharge regime having a discharge current that is in the range of 0.2A-1 5A and a discharge
`voltage that is in the range of 350V-5OOV. The plasma discharge appears to be a typical
`magnetron plasma discharge that is commonly generated in plasma processing systems. The
`plasma discharge is formed by using a square voltage pulse. There is no description in
`Mozgrin related to Part 2 of the CVC of choosing an amplitude and a rise time ofthe voltage ,
`pulse in order to increase a rate ofexcitation of ground state atoms to create excited atoms in
`a multi-stcp ionization process as claimed in amended independent claim 1. In fact, there is
`no description in Mozgrin of choosing an amplitude and a rise time of a voltage pulse to
`
`_
`
`varying the plasma discharge conditions by changing the amplitude and the rise time ofthe
`voltage pulse. See Mozgrin page 403 lines 8-13.
`
`Part 3 ofthe CVC shown in FIG. 4 of' Mozgn'n is a high-current discharge regime in
`which the discharge voltage remains stationary at 90V over a current that is in the range of
`ISA-1,000A. Part 3 ofthe CVC corresponds to a prior art magnetron discharge for high-
`pressure (10'1 torr) plasma processing. The voltage drops sharply in this regime until the
`current reaches a quasi-stationary value that maintains the discharge power at a constant
`value. There is no description related to Part 3 of the CVC of choosing an amplitude and a
`
`PAGE 19m* RCVD AT 5l14l2004 10:56:05 PM [Eastern Daylight Time]* SVR:USPTO£FXRF-1l0‘ DNISISHQSOS" CSID:781 271 152? ‘ DURATION(mm-ss):08-12
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`

`' 08/14/2004 now 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`Iozoxozs
`
`Amendment and Response
`Applicant: Chistyakov
`SeriulNo.: 10/065,277
`Page 14 of 20
`
`rise time of a voltage pulse to increase a rate of excitation of ground state atoms to create
`
`excited atoms in a multi-step ionization process as claimed in amended independent claim 1.
`
`Part 4 of the CVC shown in FIG. 4 ofMozgrin is a high-current, low—voltage arc
`
`discharge regime having a (Small that is greater than IkA and a voltage that is in the range
`
`of 10—30V. Arc diSeharges are generally undesirable for most plasma processing
`
`applicatiOns. Arc discharges are observed in conventional magnetrons when too much power
`
`applied to the plasma. There is no description rclated to Part 4 of the CVC of choosing an
`
`amplitude and a rise time of avoltagc pulse to increase a rate of excitation of ground state
`
`atoms to create excited atoms in a multi-step ionization process as claimed in amended
`
`independent claim 1.
`
`Thus, the Applicant submits that there is no teaching or suggestion of increasing an
`
`excitation rate of ground state atoms in a weakly-ionized plasma to generate a multi—step
`
`ionization process in either Part 1, Part 2, Part 3, 0r Part 4 of the CVC of Mozgrin. In View
`
`of the above remarks, the Applicant resPectfully submits that Mozgrin does not describe each
`
`and every element of independent claim 1 as currently amended, either expressly or
`
`inherently. Therefore, the Applicant submits that Mozgrin does not anticipate independent
`
`claim I as currently amended. Thus, the Applicant submits that amended independent claim
`
`1 and dependent claims 4, 5, 7, 13, I4, 16, and 19 are allowable under 35 U.S.C. §102(b).
`
`Tnde endcnt Claim 20 andD endent
`
`Iaim 2 -
`
`- 9
`
`2 33 and 37
`
`The Applicant believes that Mozgn'n does not describe each and every element of
`
`independent claim 20 as currently amended. Independent claim 20 is herein amended to recite
`
`the step of applying a voltage pulse to the weakly-ionized plasma where an amplitude and a rise
`
`time of the voltage pulse are chosen to increase an excitation rate of ground state atoms in the
`
`weakly—ionized plasma to create a multi-step ionization process. The multi-stcp ionization
`
`process includes exciting the ground state atoms to generate excited atoms, and then ionizing the
`
`excited atoms within the weakly-ionized plasma to create ions that sputter target material from
`
`the sputtering target.
`
`The Applicant respectfully submits that there is no description in Mozgrin of applying a
`
`PAGE MP RCVD AT 5l14l2004 10:55:05 PM [Eastern Daylight Time]' S‘JR:USPT0-EFXlll"-ll0'I DNIS:8729306* CSID:781 271 1527* DURATION lmm-ss]:08-12
`
`

`

`08/14/2004 HON 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`.021/026
`
`Amendment and Response
`Applicant: Chistynkov
`ScrialNo-: 10/065,277
`Page 15 of 20
`
`voltage pulse to a weakly-ionized plasma where an amplitude and a rise time of the voltage pulse
`
`are chosen to increase an excitation rate of ground state atoms in the weakly-ionized plasma to
`
`create a multi-step ionization process as claimed in amended claim 20. In View of the above
`
`remarks, the Applicant respectfully submits that Mozgrin does not describe each and every
`
`element of' independent claim 20 as currently amended, either expressly or inherently.
`
`Therefore. the Applicant submits that Mozgn'n does not ant