EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`
`References cited herein:
` U.S. Pat. No. 6,853,142 (“’142 Patent”)
`
` U.S. Pat. No. 6,413,382 (“Wang”)
`
` D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
` U.S. Pat. No. 6,398,929 (“Chiang”)
`
`
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`[1pre.] An apparatus for
`generating a strongly-ionized
`plasma in a chamber, the
`apparatus comprising:
`
`[1a.] an ionization source that
`generates a weakly-ionized
`plasma from a feed gas, the
`weakly-ionized plasma
`reducing the probability of
`developing an electrical
`breakdown condition in the
`
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`The combination of Wang and Lantsman discloses an
`apparatus for generating a strongly-ionized plasma in a
`chamber.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB, more preferably at least
`100 times, and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of
`1kW will typically be sufficient to support a plasma with the
`torpedo magnetron and a 200 mm wafer although with little
`if any actual sputter deposition.”)
`
`Wang at 7:31-39 (“In one mode of operating the reactor,
`during the background period, little or no target sputtering is
`expected. The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP
`magnetron can maintain a plasma at lower power and lower
`pressure than can a larger stationary magnetron. However, it
`is possible to combine highly ionized sputtering during the
`pulses with significant neutral sputtering during the
`background period.”)
`
`Wang at 7:28-30 (“ the application of the high peak power PP
`instead quickly causes the already existing plasma to spread
`and increases the density of the plasma”)
`
`The combination of Wang and Lantsman discloses an
`ionization source that generates a weakly-ionized plasma
`from a feed gas, the weakly-ionized plasma reducing the
`probability of developing an electrical breakdown condition
`in the chamber.
`
`Wang at Fig. 7
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`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`
`
`chamber;
`
`[1b.] a power supply that
`supplies power to the weakly-
`ionized plasma though an
`electrical pulse applied across
`
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32….”)
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is
`supplied to the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is chosen
`to exceed the minimum power necessary to support a
`plasma... [T]he application of the high peak power PP
`quickly causes the already existing plasma to spread and
`increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB … and most preferably
`1000 times to achieve the greatest effect of the invention. A
`background power PB of 1 kW [causes] little if any actual
`sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region 42 of
`a high-density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, which may dislodge large particles from
`the target or chamber… The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been
`ignited at the beginning of sputtering prior to the illustrated
`waveform, no more plasma ignition occurs.”).
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to
`the target 14 … and supplies an essentially constant negative
`voltage to the target 14 corresponding to the background
`power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW will
`typically be sufficient to support a plasma…”)
`The combination of Wang and Lantsman discloses a power
`supply that supplies power to the weakly-ionized plasma
`though an electrical pulse applied across the weakly-ionized
`plasma, the electrical pulse having a magnitude and a rise-
`
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`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`
`
`the weakly-ionized plasma, the
`electrical pulse having a
`magnitude and a rise-time that
`is sufficient to increase the
`density of the weakly-ionized
`plasma to generate a strongly-
`ionized plasma; and
`
`[1c.] a gas line that supplies
`feed gas to the strongly-
`ionized plasma, the feed gas
`diffusing the strongly-ionized
`plasma, thereby allowing
`additional power from the
`pulsed power supply to be
`absorbed by the strongly-
`ionized plasma.
`
`time that is sufficient to increase the density of the weakly-
`ionized plasma to generate a strongly-ionized plasma.
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces
`a train of negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at
`least 10 times the background power level PB, … most
`preferably 1000 times to achieve the greatest effects of the
`invention. A background power PB of 1 kW will typically be
`sufficient…”)
`
`Wang at 7:28-30 (“… the application of the high peak power
`PP instead quickly causes the already existing plasma to
`spread and increases the density of the plasma.”).
`
`Wang at 7:36-39 (“However, it is possible to combine highly
`ionized sputtering during the pulses with significant neutral
`sputtering during the background period.”)
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the
`design of the pulsed DC power supply 80, and significant
`rise times and fall times are expected.”)
`
`See evidence cited in limitation [1pre] of claim 1.
`
`The combination of Wang and Lantsman discloses a gas line
`that supplies feed gas to the strongly-ionized plasma, the
`feed gas diffusing the strongly-ionized plasma, thereby
`allowing additional power from the pulsed power supply to
`be absorbed by the strongly-ionized plasma.
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32 through a mass flow controller
`34 to a region in back of the grounded shield 24.”)
`
`Wang at 4:8-10 (“The gas flows into the processing region
`22 through a gap formed between the pedestal 18, the
`grounded shield 24, and a clamp ring or plasma focus ring 36
`surrounding the periphery of the wafer 20.”)
`
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`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`
`
`Wang at 4:51-55 (“A computerized controller 58 controls the
`… mass flow controller 34, as illustrated….”)
`
`Lantsman at 2:48-51 (“This secondary power supply ‘pre-
`ignites’ the plasma so that when the primary power supply is
`applied, the system smoothly transitions to final plasma
`development and deposition.”)
`
`One of ordinary skill would have been motivated to combine
`Wang and Lantsman. Lantsman is directed to sputtering
`using a plasma. So is Wang. See Wang at Title (“Pulsed
`sputtering with a small rotating magnetron”); 3:20-21 (“[A]
`high plasma density is achieved adjacent to the magnetron
`during the pulse.”). Also, Lantsman uses two power
`supplies, one for pre-ionization and one for deposition. So
`does Wang. See Wang at Fig. 7 [showing pulsed supply 80
`and constant supply 100]
`
`Lantsman generates a plasma without arcing. So does Wang.
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, …. The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Summarizing, Wang and Lantsman relate to the same
`application. Further, one of ordinary skill would have been
`motivated to use Lantsman’s continuous gas flow in Wang
`so as to maintain a desired pressure in the chamber. Also,
`use of Lantsman’s continuous gas flow in Wang would have
`worked well with Wang’s mass flow controller 34 and would
`have been a combination of old elements in which each
`element behaved as expected. Finally, such a continuous
`flow of gas in Wang would diffuse the strongly-ionized
`plasma and allow additional power to be absorbed by the
`plasma as required by claim 40.
`
`The combination of Wang and Lantsman discloses a magnet
`that is positioned to generate a magnetic field proximate to
`the weakly-ionized plasma, the magnetic field trapping
`electrons in the weakly-ionized plasma.
`
`See evidence cited in claim 1
`
`‘142 Patent at 1:41-43 [in the Background of the Invention]
`
`7. The apparatus of claim 1
`further comprising a magnet
`that is positioned to generate a
`magnetic field proximate to the
`weakly-ionized plasma, the
`magnetic field trapping
`electrons in the weakly-ionized
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`

`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`
`
`plasma.
`
`8. The apparatus of claim 7
`wherein the magnet comprises
`an electro-magnet.
`
`[10pre.] A method for
`generating a strongly-ionized
`plasma in a chamber, the
`method comprising:
`
`[10a.] ionizing a feed gas to
`form a weakly-ionized plasma
`that reduces the probability of
`developing an electrical
`breakdown condition in the
`chamber;
`
`[10b.] supplying power to the
`weakly-ionized plasma by
`applying an electrical pulse
`across the weakly-ionized
`plasma, the electrical pulse
`having a magnitude and a rise-
`
`(“Magnetron sputtering systems use magnetic fields that are
`shaped to trap and concentrate secondary electrons….”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus
`creating a region 42 of a high-density plasma (HDP)….”)
`
`Wang at Fig. 1
`
`The combination of Wang, Lantsman and Mozgrin discloses
`the magnet comprises an electro-magnet.
`
`See evidence cited in claim 7
`
`Mozgrin at Fig. 1
`
`Mozgrin at 401, right col, Fig. 1 caption, (“Fig. 1. Discharge
`device configurations: (a) planar magnetron; (b) shaped-
`electrode configuration….”)
`
`Mozgrin at 401, left col, ¶ 2 (“The system with shaped
`electrodes involved two axisymmetrical electrodes 120 mm
`in diameter separated by about 10 mm, and immersed in a
`cusp-shaped magnetic field produced by oppositely directed
`multilayer coils. The values of Bmax were controlled by coil
`current variation to range from 0 to 1000 G.”) (emphasis
`added)
`
`The combination of Wang and Lantsman discloses a method
`for generating a strongly-ionized plasma in a chamber.
`
`See evidence cited in claim 1 preamble.
`
`The combination of Wang and Lantsman discloses ionizing a
`feed gas to form a weakly-ionized plasma that reduces the
`probability of developing an electrical breakdown condition
`in the chamber.
`
`See evidence cited limitation [1a] in claim 1.
`
`The combination of Wang and Lantsman discloses supplying
`power to the weakly-ionized plasma by applying an
`electrical pulse across the weakly-ionized plasma, the
`electrical pulse having a magnitude and a rise-time that is
`sufficient to increase the density of the weakly-ionized
`
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`

`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`
`
`time that is sufficient to
`increase the density of the
`weakly-ionized plasma to
`generate a strongly-ionized
`plasma; and
`
`[10c.] diffusing the strongly-
`ionized plasma with additional
`feed gas thereby allowing the
`strongly-ionized plasma to
`absorb additional energy from
`the power supply.
`
`17. The method of claim 10
`wherein the peak plasma
`density of the weakly-ionized
`plasma is less than about 1012
`cm-3.
`
`18. The method of claim 10
`wherein the peak plasma
`density of the strongly-ionized
`plasma is greater than about
`1012 cm-3.
`
`plasma to generate a strongly-ionized plasma.
`
`See evidence cited in limitation [1b] in claim 1.
`
`The combination of Wang and Lantsman discloses diffusing
`the strongly-ionized plasma with additional feed gas thereby
`allowing the strongly-ionized plasma to absorb additional
`energy from the power supply.
`
`See evidence cited in limitation [1c] in claim 1.
`
`The combination of Wang, Lantsman and Mozgrin discloses
`the peak plasma density of the weakly-ionized plasma is less
`than about 1012 cm-3.
`
`See evidence cited in claim 10
`
`Mozgrin at 401 (“We found out that only the regimes with
`magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-1011 cm-3 range.”)
`
`One of ordinary skill would expect Wang’s background
`plasma to have a density comparable to that of Mozgrin’s
`region 1. Mozgrin’s region 1 and Wang’s background power
`level, PB, are both used to generate base plasmas prior to
`application of a pulse. In both Wang and Mozgrin,
`application of the pulse increases the density of the plasma
`and the resulting high density plasma can then be used for
`sputtering. One of ordinary skill would expect Wang’s pre-
`pulse plasma (generated with PB) to have a density similar to
`that of Mozgrin’s pre-pulse plasma. Mozgrin’s pre-pulse
`plasma, in Mozgrin’s region 1, has a density that is below
`1012 cm-3.
`
`The combination of Wang, Lantsman and Mozgrin discloses
`the peak plasma density of the strongly-ionized plasma is
`greater than about 1012 cm-3.
`
`See evidence cited in claim 10
`
`Wang at 7:28-30 (“ the application of the high peak power
`PP instead quickly causes the already existing plasma to
`
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`

`

`EXHIBIT D.08
`U.S. Patent No. 6,853,142
`
`‘142 Claims 8, 17 and 18
`
`Wang in view of Lantsman and Mozgrin
`
`spread and increases the density of the plasma”).
`
`Wang at 4:29-31 (“increases the sputtering rate but also at
`sufficiently high density ionizes a substantial fraction of the
`sputtered particles into positively charged metal ions.”)
`
`Mozgrin at 403, right col, ¶4 (“Regime 2 was characterized
`by intense cathode sputtering….).
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in sputtering …
`plasma density (exceeding 2x1013 cm-3).”
`
`A person of ordinary skill would expect Wang’s sputtering
`plasma, generated with the peak power, PP, to have a density
`similar to that of the plasma in Mozgrin’s region 2, which
`Mozgrin uses for sputtering. Wang and Mozgrin both
`disclose using pulses to increase the density of a plasma for
`sputtering. Accordingly, one of ordinary skill reading Wang
`would have looked to Mozgrin to determine actual plasma
`densities. The density in Mozgrin’s region 2 was greater
`than 1012 cm-3.
`
`Background:
`
`Chiang [‘929 Patent] at 3:42-47 (“A high-density plasma is
`defined as one having an average plasma density across the
`plasma, exclusive of the plasma sheaths, of at least 1011cm−3,
`and preferably at least 1012cm−3.”)
`
`
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