PATENT
`
`Attorney Docket No.: ZON-003CN2
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Chistyakov
`
`SERIAL NO.:
`
`11/183,463
`
`GROUP NO.:
`
`1795
`
`FILING DATE:
`
`July 18, 2005
`
`EXAMINER:
`
`Rodney Glenn
`McDonald
`
`TITLE:
`
`HIGH DEPOSITION RATE SPUTTERING
`
`Commissioner for Patents
`
`P.O. Box 1450
`
`Alexandria, Virginia 22313-1450
`
`AMENDMENT AND RESPONSE
`
`Sir:
`
`The following Amendment and Response is responsive to the Office Action mailed on
`
`April 21, 2010 in the above-identified patent application. Authorization to charge Attomey’s
`
`charge card for the additional claim fees is given in the EFS-Web filing submission papers.
`
`Authorization is hereby given to charge any other proper fees to the Attomey’s deposit account
`
`number 501211. Entry and consideration of the following remarks, and allowance of the claims,
`
`as presented, are respectfully requested.
`
`Pending claims begin on page 2 of this paper.
`
`Remarks begin on page 9 of this paper.
`
`EX1113
`
`EX 1113
`
`
`
`Attorney Docket No.: ZON-003CN2
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Chistyakov
`
`SERIAL NO.:
`
`11/183,463
`
`GROUP NO.:
`
`1795
`
`FILING DATE:
`
`July 18, 2005
`
`EXAMINER:
`
`Rodney Glenn
`McDonald
`
`TITLE:
`
`HIGH DEPOSITION RATE SPUTTERING
`
`Commissioner for Patents
`
`P.O. Box 1450
`
`Alexandria, Virginia 22313-1450
`
`AMENDMENT AND RESPONSE
`
`Sir:
`
`The following Amendment and Response is responsive to the Office Action mailed on
`
`April 21, 2010 in the above-identified patent application. Authorization to charge Attomey’s
`
`charge card for the additional claim fees is given in the EFS-Web filing submission papers.
`
`Authorization is hereby given to charge any other proper fees to the Attomey’s deposit account
`
`number 501211. Entry and consideration of the following remarks, and allowance of the claims,
`
`as presented, are respectfully requested.
`
`Pending claims begin on page 2 of this paper.
`
`Remarks begin on page 9 of this paper.
`
`EX1113
`
`EX 1113
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 2
`
`Amendments to the Claims
`
`Please add claims 76-78 as follows:
`
`1-30
`
`Cancelled.
`
`31.
`
`(Original) A sputtering source comprising:
`
`a) a cathode assembly comprising a sputtering target that is positioned adjacent to an
`
`anode; and
`
`b) a power supply that generates a Voltage pulse between the anode and the cathode
`
`assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma
`
`from the weakly-ionized plasma without an occurrence of arcing between the anode
`
`and the cathode assembly, an amplitude, a duration and a rise time of the Voltage
`
`pulse being chosen to increase a density of ions in the strongly-ionized plasma.
`
`32.
`
`33.
`
`34.
`
`35.
`
`36.
`
`(Original) The sputtering source of claim 31 wherein the strongly ionized plasma at least
`
`partially converts neutral sputtered atoms into positive ions in order to enhance the
`
`sputtering process with ionized physical Vapor deposition.
`
`(Original) The sputtering source of claim 31 wherein the increase of the density of ions
`
`in the strongly-ionized plasma is enough to generate sufficient thermal energy in a
`
`surface of the sputtering target to cause a sputtering yield to be related to a temperature of
`
`the sputtering target.
`
`(Original) The sputtering source of claim 33 wherein the sputtering yield is related to a
`
`temperature of a surface of the sputtering target.
`
`(Original) The sputtering source of claim 33 wherein the thermal energy generated in the
`
`sputtering target does not substantially increase an average temperature of the sputtering
`
`target.
`
`(Original) The sputtering source of claim 31 further comprising a gas flow controller that
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 3
`
`controls a flow of the feed gas so that the feed gas diffuses the strongly-ionized plasma.
`
`(Original) The sputtering source of claim 36 wherein the gas flow controller controls the
`
`flow of the feed gas to allow additional power to be absorbed by the strongly ionized
`
`plasma, thereby generating additional thermal energy in the sputtering target.
`
`(Original) The sputtering source of claim 31 further comprising a magnet that is
`
`positioned to generate a magnetic field proximate to the weakly-ionized plasma, the
`
`magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target.
`
`(Original) The sputtering source of claim 31 wherein the Voltage pulse generated
`
`between the anode and the cathode assembly excites atoms in the weakly-ionized plasma
`
`and generates secondary electrons from the cathode assembly, the secondary electrons
`
`ionizing a portion of the excited atoms, thereby creating the strongly-ionized plasma.
`
`(Original) The sputtering source of claim 31 wherein the power supply generates a
`
`constant power.
`
`(Original) The sputtering source of claim 31 wherein the power supply generates a
`
`constant Voltage.
`
`(Original) The sputtering source of claim 31 wherein a rise time of the Voltage pulse is
`
`chosen to increase an ionization rate of the strongly-ionized plasma.
`
`(Original) The sputtering source of claim 31 wherein a distance between the anode and
`
`the cathode assembly is chosen to increase an ionization rate of strongly-ionized plasma.
`
`(Original) The sputtering source of claim 31 wherein the rise time of the Voltage pulse is
`
`in the range of approximately 0.01V/usec to 1000V/usec.
`
`(Original) The sputtering source of claim 31 wherein the amplitude of the Voltage pulse
`
`is in the range of approximately 1V to 25kV.
`
`(Original) The sputtering source of claim 31 wherein a pulse width of the Voltage pulse
`
`37.
`
`38.
`
`39.
`
`40.
`
`41.
`
`42.
`
`43.
`
`44.
`
`45.
`
`46.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 4
`
`is in the range of approximately 0.1 usec to l00sec.
`
`47.
`
`(Original) A sputtering source comprising:
`
`a) a cathode assembly comprising a sputtering target that is positioned adjacent to an
`
`anode;
`
`b) a power supply that generates a Voltage pulse between the anode and the cathode
`
`assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma
`
`from the weakly-ionized plasma without an occurrence of arcing between the anode
`
`and the cathode assembly, an amplitude and a rise time of the Voltage pulse being
`
`chosen to increase a density of ions in the strongly-ionized plasma; and
`
`a substrate support that is positioned adjacent to the sputtering target; and
`
`d) a bias Voltage source having an output that is electrically coupled to the substrate
`
`support.
`
`48.
`
`49.
`
`50.
`
`51.
`
`(Original) The sputtering source of claim 47 wherein the increase of the density of ions
`
`in the strongly-ionized plasma is enough to generate sufficient thermal energy in a
`
`surface of the sputtering target to cause a sputtering yield to be related to a temperature of
`
`the sputtering target.
`
`(Original) The sputtering source of claim 48 wherein the sputtering yield is related to a
`
`temperature of a surface of the sputtering target.
`
`(Original) The sputtering source of claim 48 wherein the thermal energy generated in the
`
`surface of the sputtering target does not substantially increase an average temperature of
`
`the sputtering target.
`
`(Original) The sputtering source of claim 47 wherein the Voltage pulse generated
`
`between the anode and the cathode assembly excites atoms in the weakly-ionized plasma
`
`and generates secondary electrons from the cathode assembly, the secondary electrons
`
`ionizing a portion of the excited atoms, thereby creating the strongly-ionized plasma.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 5
`
`52.
`
`53.
`
`54.
`
`55.
`
`56.
`
`57.
`
`58.
`
`59.
`
`60.
`
`61.
`
`62.
`
`63.
`
`(Original) The sputtering source of claim 47 wherein the power supply generates a
`
`constant power.
`
`(Original) The sputtering source of claim 47 wherein the power supply generates a
`
`constant Voltage.
`
`(Original) The sputtering source of claim 47 wherein a rise time of the Voltage pulse is
`
`chosen to increase an ionization rate of the strongly-ionized plasma.
`
`(Original) The sputtering source of claim 47 wherein a distance between the anode and
`
`the cathode assembly is chosen to increase an ionization rate of strongly-ionized plasma.
`
`(Original) The sputtering source of claim 47 wherein the rise time of the Voltage pulse is
`
`in the range of approximately 0.0lV/usec to l000V/usec.
`
`(Original) The sputtering source of claim 47 wherein the amplitude of the Voltage pulse
`
`is in the range of approximately 1V to 25kV.
`
`(Original) The sputtering source of claim 47 wherein a pulse width of the Voltage pulse
`
`is in the range of approximately 0.1 usec to l00sec.
`
`(Original) The sputtering source of claim 47 wherein a distance from the sputtering
`
`target to the substrate support is in the range of approximately lcm to 100cm.
`
`(Original) The sputtering source of claim 47 wherein the bias Voltage source comprises
`
`an RF power source.
`
`(Original) The sputtering source of claim 47 further comprising a gas flow controller that
`
`controls a flow of the feed gas so that the feed gas diffuses the strongly-ionized plasma.
`
`(Original) The sputtering source of claim 61 wherein the gas flow controller controls the
`
`flow of the feed gas to allow additional power to be absorbed by the strongly ionized
`
`plasma, thereby generating additional thermal energy in the sputtering target.
`
`(Original) The sputtering source of claim 47 further comprising a magnet that is
`
`positioned to generate a magnetic field proximate to the weakly-ionized plasma, the
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 6
`
`magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target.
`
`64.
`
`(Original) A method for high deposition rate sputtering, the method comprising:
`
`a) generating a Voltage pulse between the anode and the cathode assembly comprising a
`
`sputtering target, the Voltage pulse creating a weakly-ionized plasma and then a
`
`strongly-ionized plasma from the weakly-ionized plasma without an occurrence of
`
`arcing between the anode and the cathode assembly; and
`
`b) adjusting an amplitude and a rise time of the Voltage pulse to increase a density of
`
`ions in the strongly-ionized plasma.
`
`(Original) The method of claim 64 wherein the applying the Voltage pulse to the cathode
`
`assembly generates excited atoms in the weakly-ionized plasma and generates secondary
`
`electrons from the sputtering target, the secondary electrons ionizing the excited atoms,
`
`thereby creating the strongly-ionized plasma.
`
`(Original) The method of claim 64 wherein the ions in the strongly-ionized plasma cause
`
`a surface layer of the sputtering target to evaporate.
`
`(Original) The method of claim 64 wherein the rise time of the Voltage pulse is in the
`
`range of approximately 0.01V/usec to 1000V/usec.
`
`(Original) The method of claim 64 wherein the amplitude of the Voltage pulse is in the
`
`range of approximately 1V to 25kV.
`
`(Original) The method of claim 64 wherein a pulse width of the Voltage pulse is in the
`
`range of approximately 0.1 usec to 100sec.
`
`(Original) The method of claim 64 wherein the adjusting an amplitude and a rise time of
`
`the Voltage pulse increases the density of ions in the strongly-ionized plasma enough to
`
`generate sufficient thermal energy in a surface of the sputtering target to cause a
`
`sputtering yield to be related to a temperature of the sputtering target.
`
`65.
`
`66.
`
`67.
`
`68.
`
`69.
`
`70.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 7
`
`71.
`
`72.
`
`73.
`
`74.
`
`75.
`
`(Original) The method of claim 70 wherein the sputtering yield is non-linearly related to
`
`the temperature of the sputtering target.
`
`(Original) The method of claim 64 further comprising applying a bias Voltage to a
`
`substrate support that is positioned adjacent to the sputtering target.
`
`(Original) The method of claim 64 further comprising generating a magnetic field
`
`proximate to the sputtering target, the magnetic field trapping electrons proximate to the
`
`sputtering target.
`
`(Original) The method of claim 64 further comprising diffusing the weakly-ionized
`
`plasma with a Volume of the feed gas while ionizing the Volume of the feed gas to create
`
`additional weakly-ionized plasma.
`
`(Original) The method of claim 64 further comprising exchanging a Volume of feed gas
`
`to diffuse the strongly-ionized plasma while applying the Voltage pulse to the cathode
`
`assembly to generate additional strongly-ionized plasma from the Volume of the feed gas.
`
`76.
`
`(New) A sputtering source comprising:
`
`a) a cathode assembly comprising a sputtering target that is positioned adjacent to an
`
`anode; and
`
`b) a power supply that generates a Voltage pulse between the anode and the cathode
`
`assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma
`
`from the weakly-ionized plasma without an occurrence of arcing between the anode
`
`and the cathode assembly, an amplitude of the Voltage pulse being chosen to increase
`
`a density of ions in the strongly-ionized plasma.
`
`77.
`
`(New) A sputtering source comprising:
`
`a) a cathode assembly comprising a sputtering target that is positioned adjacent to an
`
`anode; and
`
`b) a power supply that generates a Voltage pulse between the anode and the cathode
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 8
`
`assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma
`
`from the weakly-ionized plasma without an occurrence of arcing between the anode
`
`and the cathode assembly, a duration of the Voltage pulse being chosen to increase a
`
`density of ions in the strongly-ionized plasma.
`
`78.
`
`(New) A sputtering source comprising:
`
`a) a cathode assembly comprising a sputtering target that is positioned adjacent to an
`
`anode; and
`
`b) a power supply that generates a Voltage pulse between the anode and the cathode
`
`assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma
`
`from the weakly-ionized plasma without an occurrence of arcing between the anode
`
`and the cathode assembly, a rise time of the Voltage pulse being chosen to increase a
`
`density of ions in the strongly-ionized plasma.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—003CN2
`Page 9
`
`Interview Summary
`
`REMARKS
`
`The Applicant and the Applicant’s attorney thank Examiner McDonald for his time
`
`during the telephone interview on June 22, 2010. During the interview, the proposed response
`
`and the description of the apparatus described in the Kouznetsov reference were discussed.
`
`Pending Claims
`
`Claims 1-30 have been cancelled. Claims 31-78 are pending. New claims 76-78 have
`
`been added. The Applicant respectfully requests reconsideration of the pending claims in light
`
`of the arguments presented herein.
`
`Rejection Under 35 U.S.C. §102
`
`Claims 31-46 and 73-75 are rejected Under 35 U.S.C. §102(e) as being anticipated by
`
`W0 02/ 103 078Al to Kouznetsov (hereinafter “Kouznetsov”).
`
`Independent Claim 31
`
`The Office Action states that Kouznetsov describes all the elements recited in
`
`independent claim 31. More specifically, the Office Action states that Kouznetsov describes a
`
`power supply that generates a voltage pulse between the anode and the cathode assembly that
`
`creates a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized
`
`plasma without an occurrence of arcing between the anode and the cathode assembly, an
`
`amplitude, a duration and a rise time of the voltage pulse being chosen to increase a density of
`
`ions in the strongly-ionized plasma.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 10
`
`The Applicant respectfully traverses the rejection under 35 U.S.C §l02 for the following
`
`reasons. First, Kouznetsov does not describe apparatus that generate a Voltage pulse between the
`
`anode and the cathode assembly that creates a weakly-ionized plasma and then a strongly-
`
`ionized plasma from the weakly-ionized plasma. Instead, Kouznetsov describes methods and
`
`apparatus for generating two separate and independent pulses. Second, Kouznetsov does not
`
`teach that strongly-ionized plasma is generated from the weakly-ionized plasma without an
`
`occurrence of arcing between the anode and the cathode assembly wherein the amplitude, the
`
`duration and the rise time of the Voltage pulse is chosen to increase a density of ions in the
`
`strongly-ionized plasma. Instead, Kouznetsov teaches that occurrences of arcing between the
`
`anode and the cathode assembly depend on the magnetic field configuration and the strength and
`
`the time difference between the first and the second pulses.
`
`More specifically, Kouznetsov describes methods and devices for producing metal, gas,
`
`and/or gas-metal plasma flows with an electrical discharge. The electrical discharges have a first
`
`period with a low electrical current passing between the anode and cathode for producing a metal
`
`Vapor by magnetron sputtering, and a second period with a high electrical current passing
`
`between the anode and cathode for ionizing metal Vapor that was produced in the first pulse.
`
`The first period of the electrical discharge has a first discharge Voltage and a first discharge
`
`current and the second period of the electrical discharge has a second discharge Voltage and a
`
`second discharge current.
`
`The first and second periods of the electrical discharge are generated with two distinctly
`
`different pulses. Kouznetsov FIGS. 3a, 3b, 4, 5, and 9 all show separate sputtering and ionizing
`
`pulses. Kouznetsov states that the ionizing discharge starts immediately after the sputtering
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 11
`
`pulse or with some, relatively small time delay after the end of the sputtering pulse. See, for
`
`example, Kouznetsov FIG. 5 that clearly shows a time delay between the sputtering pulse and
`
`the ionizing pulse. Kouznetsov further states on page 5, line 29-32 that the parameters of the
`
`first and second pulses and the time delay between the end of the first pulse and the beginning of
`
`the second pulse are defined by the requirements imposed by the high ionization of sputtered
`
`Vapor blobs.
`
`In addition, Kouznetsov describes only power supply configurations that generate
`
`sputtering pulses that are separate and independent from ionizing pulses. See Kouznetsov FIGS.
`
`8A-8C and the associated description in Kouznetsov page 21, lines 14-30. FIG. 8A illustrates a
`
`first power supply configuration showing a first power supply PS-l that generates the sputtering
`
`pulses and a second power supply PS-2 that generates the ionizing pulses. FIG. 8B illustrates a
`
`second power supply configuration showing a single power supply and a timing circuit. The
`
`timing circuit is used to generate a first triggering pulse that initiates the sputter pulse and then a
`
`second triggering pulse that initiates a separate and independent ionization pulse. FIG. 8C
`
`illustrates a third power supply configuration showing two power supplies and a triggering
`
`circuit. The third power supply configuration includes a pulsed power supply electrically
`
`connected in parallel with a DC power supply. The DC power supply generates a DC signal that
`
`causes sputtering. A timing circuit is used to trigger the pulsed power supply to generate the
`
`ionizing pulse. Therefore, the Applicant submits that the power supply configurations described
`
`in connection with FIGS. 8A-C all generate either a pulse or a DC waveform that creates
`
`sputtering, and then a separate and independent pulse that creates ionization.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 12
`
`Furthermore, Kouznetsov teaches that occurrences of arcing between the anode and the
`
`cathode assembly depend on the magnetic field configuration and on the strength and the time
`
`difference between the low current discharges and the high current discharges. See, for example,
`
`Kouznetsov page 6, lines 33-34, which states that are suppression can be achieved using a now
`
`discovered phenomenon of dependence of arc formation on the plasma confinement properties of
`
`the magnetron magnetic configuration and on the time between discharges. Kouznetsov
`
`emphasizes on page 7, lines 3-4, that in order to achieve efficient arc suppression, it is necessary
`
`to use a magnetic field having a high strength.
`
`More specifically, Kouznetsov teaches on page 24, lines 6-8 that after the discharge has
`
`been ignited, the magnetic field intensity and the repetition frequency of the pulses are adjusted
`
`to obtain discharges without any concentrated arc formation. Kouznetsov describes on page 17,
`
`lines 2-31, parameters of the discharge device that are used to avoid arc formation. The
`
`parameters include the maximum radial strength of the magnetic field at the sputtering surface of
`
`cathode. In addition, the parameters include the pulse repetition frequency of the low and high
`
`current discharges. The Kouznetsov method and apparatus requires the use of additional
`
`external pre-ionization to generate low and high current pulse discharges at pulse repetition rate
`
`that are less than 20 Hz. According to Kouznetsov, under these conditions without external pre-
`
`ionization, the discharges have a random occurrence and appear in the form of contracted arc
`
`discharges. See Kouznetsov page 17, lines 20-23.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 13
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`The Applicant submits that Kouznetsov does not teach every aspect of the claimed
`
`invention either explicitly or impliedly because Kouznetsov does not teach apparatus that
`
`generate a voltage pulse between the anode and the cathode assembly that creates a weakly-
`
`ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma in the same
`
`pulse and does not teach that strongly-ionized plasma is generated from the weakly-ionized
`
`plasma without an occurrence of arcing between the anode and the cathode assembly wherein the
`
`amplitude, the duration and the rise time of the voltage pulse is chosen to increase a density of
`
`ions in the strongly-ionized plasma. Instead, Kouznetsov describes a power supply configuration
`
`that generates either a pulse or a DC waveform that creates sputtering and deposition, and a
`
`separate and independent pulse that creates ionization. Also, Kouznetsov does not describe
`
`choosing an amplitude, a duration, and a rise time of the voltage pulse that increases a density of
`
`ions in the strongly-ionized plasma without the occurrence of arcing between the anode and the
`
`cathode assembly. In contrast, Kouznetsov describes varying the magnetic field intensity and
`
`the repetition frequency of the pulses to obtain discharges without any concentrated arc
`
`formation. Kouznetsov also describes the use of an external ionization source to eliminate arc
`
`formation at low repetition rates. See Kouznetsov page 17, lines 20-23.
`
`Therefore, the Applicant submits that independent claim 31 is allowable over Kouznetsov
`
`and that dependent claims 32-46 are allowable as depending from an allowable base claim.
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 14
`
`Independent Claim 64
`
`Independent claim 64 recites a method for high deposition rate sputtering that includes
`
`the steps of generating a Voltage pulse between the anode and the cathode assembly that creates a
`
`weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma
`
`without an occurrence of arcing between the anode and the cathode assembly; and adjusting an
`
`amplitude and a rise time of the Voltage pulse to increase a density of ions in the strongly-ionized
`
`plasma.
`
`As described in connection with the rejection of independent claim 31, Kouznetsov does
`
`not describe generating a Voltage pulse between the anode and the cathode assembly that creates
`
`a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma.
`
`Instead, Kouznetsov describes a power supply configuration that generates either a pulse or a DC
`
`waveform that creates sputtering, and a separate and independent pulse that creates ionization.
`
`Also, Kouznetsov does not describe adjusting an amplitude, a duration, and a rise time of the
`
`Voltage pulse that increases a density of ions in the strongly-ionized plasma without the
`
`occurrence of arcing between the anode and the cathode assembly.
`
`Therefore, the Applicant submits that independent claim 64 is allowable over Kouznetsov
`
`and that dependent claims 65-75 are allowable as depending from an allowable base claim.
`
`Rejection Under 35 U.S.C. §103
`
`Claims 47-59, 61-63 and 72 are rejected under 35 U.S.C. §l03(a) as being unpatentale
`
`over Kouznetsov in View of W0 01/98553 also to Kouznetsov (hereinafter “KouznetsoV ‘553).
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—0O3CN2
`Page 15
`
`Regarding independent claims 47, the Office Action states that Kouznetsov discloses all the
`
`elements of claim 47, but does not disclose the bias.
`
`Independent claim 47 recites a sputtering source including a power supply that generates
`
`a voltage pulse between the anode and the cathode assembly that creates a weakly-ionized
`
`plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an
`
`occurrence of arcing between the anode and the cathode assembly, where an amplitude and a rise
`
`time of the voltage pulse are chosen to increase a density of ions in the strongly-ionized plasma.
`
`To be unpatentable under 35 U.S.C. §103(a), the differences between the subject matter
`
`sought to be patented and the prior art must be such that the subject matter as a whole would
`
`have been obvious at the time the invention was made to a person having ordinary skill in the art.
`
`To establish prima facie obviousness of a claimed invention, all the claim limitations must be
`
`taught or suggested by the prior art.
`
`As described in connection with the rejection of independent claim 31, Kouznetsov does
`
`not describe the claimed power supply. Instead, Kouznetsov describes a power supply
`
`configuration that generates either a pulse or a DC waveform that creates sputtering, and a
`
`separate and independent pulse that creates ionization. Also, Kouznetsov does not describe
`
`choosing an amplitude, a duration, and a rise time of the voltage pulse that increases a density of
`
`ions in the strongly-ionized plasma without the occurrence of arcing between the anode and the
`
`cathode assembly.
`
`Therefore, the Applicant submits that independent claim 47 is not obvious over
`
`Kouznetsov in view of Kouznetsov ‘S53 and is allowable over the prior art of record. In
`
`
`
`Amendment and Response
`U.S.S.N.: 11/183,463
`
`Attorney Docket No.: ZON—003CN2
`Page 16
`
`addition, the Applicant submits that dependent claims 48-63 are allowable as depending from an
`
`allowable base claim.
`
`In addition, as described above, the Applicant submits that independent claim 64 is
`
`allowable over Kouznetsov. Therefore, dependent claim 72 is allowable as depending from an
`
`allowable base claim.
`
`CONCLUSION
`
`Claims 31-75 are currently pending in the present application. The Applicant
`
`respectfully requests reconsideration of the pending claims in light of the arguments made in this
`
`Amendment and Response. The undersigned attorney welcomes the opportunity to discuss any
`
`outstanding issues, and to work with the Examiner toward placing the application in condition
`
`for allowance.
`
`Date: June 23, 2010
`
`Reg. No. 40,137
`
`Tel. No.: (781) 271-1503
`Fax No.: (781)271-1527
`
`Doc. 4393
`
`Respectfully submitted,
`
`/Kurt Rauschenbach/
`
`Kurt Rauschenbach, Ph.D.
`Attorney for Applicant
`Rauschenbach Patent Law Group, LLP
`Post Office Box 387
`Bedford, MA 01730
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