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`|PR2014~O1030 / TSMC-1018
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`Page 10 of 178
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`

`

`EAR CODE LABEL
`
`
`IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
`
`»
`
`1:IVJIS.IPATEIN'IIAI5PLICATION
`
`SERIAL NUMBER ’
`
`FILING DATE
`
`cLAss
`
`GROUP ART UNIT
`
`03/510,717
`
`_
`
`08/03/95
`RULE 60
`
`x
`
`JAMES M. CLEEVES, REDWOODVCI'I‘Y, CA.
`
`430
`
`v
`
`1113
`
`**CONTINUING DATA************akimvcmkmhk
`VERIFIED
`THIS APPLN IS‘A‘DIV OF
`
`08/361,595 12/22/94 ABN
`
`”FOREIGN/PCT HPPLICATIONSIHIINRRRR 1'“ I
`VERIFIED
`
`
`
`APPLICANT
`
`ADDRESS
`
`FOREIGN FILING LICENSE GRANTED 09/07/95
`SHEETS
`'- TOTAL ‘
`INDEPENDENT
`DRAWING
`CLAIMS
`CLAIMSV »
`
`I FILING .FEE
`RECEIVED
`
`ATTORNEY DOCKET NO. '
`
`10"'~‘11
`
`*
`
`»1
`
`$730.00 "
`
`16820.?04313
`
`’ BLAKELY SOKOLOFF TAYLOR AND VZAFMAN
`22400 WILSHIRE BOULEVARD
`SEVENTH FLOOR
`. -'
`V
`Los- ANGELES CA 90025
`
`METHOD FOR REDUCED PITCH LITHOGR'AEH?’
`
`that annexed hereto is a trye co Vfrqmlvthe Ire'cord‘sv'of the United States
`This is to certif
`Patent and Tra emark Office of the application w Ich IS Identified above.
`By athority of the
`7
`-
`»
`V
`COMMISSIONER OF PATENTS AND TRADEMARKS
`
`Date V
`
`Certifying Offic’él‘
`
`_—_————_——————————
`
`|PR2014—O1030 / TSMC-1018
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`Page 11 of 178
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`
`#3.“, H9 ey’s Docket N13;
`32 AgG -
`
`
`'l
`
`
`'
`
`I
`
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`>
`
`Ila/5176517
`Patent
`
`‘
`
`168270394512
`'
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`missioner of
`.
`-
`Prior Application:
`Duda K.
`. s and Trademarks
`'
`Examiner:
`Ington, D.C.
`. 20231
`Art Unit:
`1591
`
`'
`
`B..U_L_E..G_Q
`
`-
`
`'
`
`SIR:
`
`This_is a request for filing a
`,Continuatitm application
`under 37 C.F.R. § 1.60 of pending prior application serial no.
`tile'don Decemtfirgg 19%
`
`.
`Divisional application
`X
`
`08/361 595
`.
`'
`
`'
`
`ct dam M. Ole-avg
`
`(inventor(s) currently at record for prior application)
`for METHOQFQBBBDUCED EU'CH LITHOGBAPHY
`
`(title)
`
`.
`
`-
`
`.
`,
`
`,
`
`
`
`Enclosed is a complete copy of the prior application including the
`specification (including claims), the oath or declaration showing
`the signature or an indication that it was signed, and any
`amendment referred to in the oath or declaration filed to complete
`the application. (WW) I hereby
`verify that the attached papers are a true copy of the prior
`
`application serial no.
`08/361 595
`'
`as originally filed on
`
`Decen'ber22 1994
`‘
`-
`
`.
`
`Copies of the drawings tiled in the prior application are enclosed
`herewith.
`
`'
`
`Transfer the drawings from the prior application and abandon said prior application
`as of the filing date accorded this application. A duplicate copy of this sheetIs
`enclosed for filing'In the prior application file.
`(May only be used if signed by
`person authorized by 37 C. F. R. § 1. 138 and before payment of baseIssue fee.)
`
`New formal drawings are enclosed.
`
`The filing fee is calculated below:
`
`X
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
` X
`
`
`
` X
`
`
`
`CLAIMS AS FILED IN THE PRIOR APPLICATION LESS ANY CLAIMS CANCELED BY AMENDMENT
`BELOW
`.
`OTHER THAN A
`SMALL ENTITY
`SMALL ENTITY
`
`Inden, Claims: -1-3 .
`
`Total Claims:
`
`If the difference in Cal. 1
`enter "0" in Cal. 2.
`
`is less than zero,
`
`
`
`'
`
`39915523 Zfiflfi
`
`"Emress Mail“ mailing label number
`Date of Deposl
`3' 3" 5—
`I hereby certily that this paper or fee is being deposited with the United States Postal Service "Express Mail Post
`Office to Addresses" service under 37 CFR 1.10 cnthe date indicated above and is addressed to the Commissioner
`of Patents and Trademarks, Washington, D.C. 20231.
`
`
`(Signature of para .Wpaper or fee)
`
`
`LJVlwes/cak (10/01/94) Rule 60
`
`lPR2014-01030 / TSMC-1018
`
`Page 12 of 178
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`
`
`6..
`
`
`x
`
`7
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`-
`
`8.
`9.
`
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`#15.
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`A verified statement to establish small entity status under 37] C.F.R. §§ 1.9 and
`127
`.
`isenciosed/
`was filed in the prior application and
`such status is still proper and desired.
`37 C.F.R. § 1.28(a).
`
`The Commissioner is hereby authorized to charge any fees that may be required,
`or credit any overpayment to Deposit Account No. 02-2666. A duplicate copy of
`this sheetIs enclosed.
`
`A check in the amount of $ 730.00
`
`is enclosed for the filing fee.
`
`A checkin the amount of$
`pursuant to 37 CPR. § 1.17.
`
`is enclosed for the petition fee
`'
`
`'
`
`Cancel in this applimtion original chins_1;u_____-_____'
`of the prior application before calculating the filing fee (wherein at least one
`independent claim is retained for filing purp05es).
`
`A preliminary amendment is enclosed. (Claims added by this amendment should
`be numbered consecutively beginning with the number next following the highest
`numbered original claimIn the prior application. Only an amendment reducing the
`number of claims or adding a reference to the prior application will be entered9
`before calculating the filing fee and granting the filing date.)
`
`Amend the specification by inserting the following before the first sentence on the
`first page:
`
`(a)
`
`(b)
`
`divisional of application
`-This'Is a__ continuation! X
`serial no.
`98/36] 595
`,filed Dmernber 22, 1994
`
`—, which is a
`filed
`
`continuation!
`
`divisional of
`
`'
`
`(list all prior applications)
`
`it is hereby requested that any request for a convention priority made in the prior
`application be transferred to this Rule 60 application.
`
`The prior application is assigned of record to:
`
`
`The Power of Attorney in the prior application is to:
`(Name)
`(Reg. No.)
`Edwin H Taylor, Reg. No. 25,129, and certain other listed attorneys or agents of:
`BLAKELY, SOKOLOFF, TAYLOR 81 ZAFMAN
`12400 Wilshire Blvd, Seventh Floor
`Los Angeles, California 90025
`(310) 207-3300
`
` (a) The Power appears in the original papers of the prior application
`
`serial no.
`08/361 595
`filed' December 22 1994
`
`(b)
`
`(c)
`
`Because the Power does not appear in the original papers, a copy of
`the Power in the prior application is encl0sed.
`
`Recognize as an associate attorney or agent and address all future
`communications to:
`
`(Name)
`(Reg. No.) .
`BLAKELY, SOKOLOFF, TAYLOR & ZAFMAN
`12400 Wilshire Blvd. Seventh Floor
`Los Angeles, California 90025
`(408) 720-8598
`
`(d)
`
`Address all future communications to the undersigned.
`
`2
`
`.
`
`LJV/wes/cak (10/01/94) Rule 60
`
`
`
`|PR2014-O1030 / TSMC-1018
`
`Page 13 of 178
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`
`
`16..
`
`‘"
`
`
`X
`
`17.
`
`
`
`1B.
`
`Enclosed is a photocopy of a petition for an extension of time
`pursuant to 37 C.F.R § 1.136 concurrently (or previously) submitted
`under separate cover for the above-referenced prior application.
`
`Applicant(s) hereby petition(s) for an extension of time pursuant to Rule 1.136. if
`needed. for the above-noted prior application. The Commissioner is hereby
`authorized to charge any extension or petition fee under 37 C.F.R § 1.17 that may
`be required for the above-referenced prior application to Deposit Account No 02-
`2666. Two photocopies of this document are enclosed for filingIn the prior
`application file and for Deposit Account purposes.
`Acc0mpanying this application'Is a statement requesting deletion of the name(s) of
`the person or persons who are not inVentors of the invention being claimed"In the
`continuation/divisional application. 37 C. F. R § 1 .60(b).
`'
`
`The undersigned declares further that all statements made herein of his or her own knowledge are
`true and that all statements made on information and belief are believed to be tme; and further that these
`statements were made with the knovviedge that willful false statements and the like so made are punishable
`by fineor imprisonment, or both under Section 1001 of Title 16 of the United States Code and that such
`willful false statements may jeopardize the validity of the application or any patentIssuing thereon.
`
`Date:
`
`9/3/95’
`
`Respectfully submitted,
`
`BLAKELY SOKOLOFFMT?)ZAFMAN
`By W‘L’QMichaelA.Bemadioou
`
`Reg. No.
`
`
`
`12400 Wilshire Boulevard
`Seventh Floor
`Los Angeles California 90025
`(408) 720-8598
`
`.
`
`E
`
`
`Attorney or Agent of Record
`
`Associate Attorney or Agent
`
`FIIed Under37 C.F.R.§1.34(a)
`
`3
`
`LJV/wes/cak 910/01/94) Rule .60
`
`
`
`|PR2014—01030 / TSMC-1018
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`Page 14 of 178
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`VUNTTED,VSTAT‘ES'IPATENIAPPLICATION
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`”VDUCED'PIT
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`yumocmm
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`- Inventor
`
`. Jamés M. [Clé‘eve's'
`
`' Prepared by:
`
`BLAKELY; SOKOLOFF, TAYLOR 8: ,ZAFMAN, '
`12400wi1‘shire Ban-mam '
`‘
`'. Seventh Flo'or?
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`Les Afigeles,.§afifcirnja 2 91002571026 j
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`(408)-720-8598 ‘
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`V Aftomey’s‘iDOckiet’No.1'6820;P(j48--. ‘
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`The present invention relates generally togthe fieldjot-semiconductor
`fabrication. More particularly, the present invention relates to the field of
`lithography processing for semiconductor fabncat1on
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`Lithography precesses are typically used forserruconductor fabrication,for
`example.”to form a mask over a layer to be patterned inaccordance with various
`functional and[or design requirements for fabricating a desired semiconductor
`device.
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`Foratypical lithography process, photore51st15deposited oVEr the layer to be
`. patterned andIS exposedto ultraviolet rad1at1onthrough a rnask that defines the.
`pattern to be formedf‘1n thephotoresist. The photoreSIStIS then developed to form a'
`' patternedphotoreSist layer over theunderlying layer tobepatternedThose
`' "portions of theunderlying layer that are notcovered by photoresis-t rnaythen be
`etchedusing suitable etch techniques and Chemistries. The pattern in the
`photoresist'15 thus replicated in the underlyinglayer
`.
`Typical lithography processes, hon/ever,limit the size and densitywithwhich} ,
`. semiconductor dEVices may be fabricated. For example, therrummum resolution
`capability of the lithography process determines the minimal pitch with which
`. features for a patterned layer may be printed The Ininirnum lithographic
`resolution for a patterning process may. depend, forexample, .on the lens used in”;
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`exposing photoresist'to radiation through the mask;
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`Attorney‘s- Docket No. 16820.]?048
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`BRIEF SUMMARY ANDOB" 'CTs OF T ,
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`One object of the present invention is to provide for a relatively reduced pitch
`for features of apatterned layer
`'
`7
`Another object of the present invention is to provide for the fabrication of
`" relatively denser semiconductor devices.
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`Another object of the present invention isto provide for the fabrication of
`' relatively smaller-Sizedsemiconductor devices
`A lithography method for semiconductor fabrication using asemiconductor
`Wafer15described. F611 the lithography method, a firstimaging layer15 formed over
`the semicdnductor wafer. Thef-irSt1maginglayer'ispatterned1n atcordancewith a
`I first pattern to form a first patterned layer The firstpatterned layer13 stabiliZed. A
`secondimaging layer15 formed over the first patternedlayersuch that the first
`patterned layer15 surrounded by thesecc'ind'imaging layer. The.second imaging
`layer15 patterned1n aCCOrdance with a second pattern to form a second patterned
`layer.
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`. Another lithographym‘ethod for s'ernico‘ndilctorfabrication using a
`‘ semiconductor Water is also described For the lithography method,'an imaging
`layer15 formed over the semiconductor water. A portion. ofthe'1maging layeris
`.' exposed to-radiation'1n accordance with a firSt pattern The eitposedportion of the
`_
`imaging layer15 stabiliZed. Theimaging layer15patternedin accordance with a
`second pattern to form a patterned layer.
`' Other objects, features, and advantages of the present invention will be
`' apparent fromtheaccompanying drawings and from the detailed descriptionthat
`follows below.
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`.Attorney’s Docket No. 16820.P04B
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`' BRIEFDES RIP-T o‘No‘r HE,
`The pre‘sent invention is illustrated by wayof example and not limitation1n “
`’ the figures of the accompanying drawings,111‘ whichlike: references indicate similar _
`elements and _in which:
`I
`Figure 1 illustrates,’in flow diagram form, one lithography method fer
`semiconductor fabrication;
`Figure 2 illustrates a. cross—Sectionalviewof a Semioonductor Wafer having. a
`first imaging layer being exposed to radiation through a first mask;
`Figure 3 illustrates a cross-sectiOna1 Vie'w of the semiconductor wafer Of
`. Figure 2 after the firstimaging layer has beendeVeIoped,
`1
`1
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`Figure 4 illustrates across-sectional View of the semieonductor wafer of 7
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`Figure 3 wherea seCOnd imaging-layer isformed'over the Wager and is» being exposed
`\/to radiation through a secondmask;
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`Figure 5 illustrates across-sectional View.of the semiconductor wafer of
`. Figure 4 after the second imaging layer hasbeen developed;
`Figure 6 illustrates,'in flowdiagramfofin, anotherlithographymethod for
`,,
`semiconductor fabrication;
`1
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`1 Figure7 ill’ustratesva cross-sectional View ofa‘_serniconduot0r waferr'having an
`imaging layer being exposed to radiationthrough afirstmask;
`1
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`Figure. 8 illustrates a cross-seetion-al View of the semiconductOr wafer _of
`Figure 7 after an exposed portion of the1maging layer has been stabilized,
`Figure 9 illustrates a crOss--sectional View of the semiconductor Waferof
`. Figure 8 where the'imaging _'_layer isexposedto radiation through a second mask;
`Figure10 illustrates a crciss-sectionai view 6f the semiconductor wafer of
`Figure 9 after an exposed portion of theimaging layer has been stabilized;
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`Figurevll illustrates a crossesec’tional view of the semicondue't'or wafer of
`1 Figure 10 after the imaging layer has been developed:
`Figure 12 illustrates,1n flow diagram form, anotherlithography method for
`semiconductor fabrication; 1
`1
`Figure 13 illustrates a cross—Sectional view of 'a semiconductOr Wafer having
`, an imaging layer being exposed to radiation through a first mask;
`Figure 14 illustrates across-sectionalViewof the-semiconductor Wafer of ‘_
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`.
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`Figure 13 after an expos'e‘cl‘portion‘ol’ the imaging layer has been stabilizedi .
`_ Figure 15 illustrates across-sectionalview of the 'sem'ieonduetor wafer of
`Figure 1‘4l'vl-Ilherether imaging layer is exposed to .radi'ation'through _a sevzorid mask; V
`and
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`10
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`Figure 16 illustrates across-Sectional View of-the serruconductor wafer of
`‘ Figure 15 aftertheimaginglayer has been developed,
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`BETA L DESCRIPTION
`Thefollowing detailed descriptmn sets forth an embodimentor embodiments
`in accordance With thepresentinvention for method for reduced pitch lithography.
`In the following description, details are set forth such as specific materials,
`,
`v thicknesses, parameters,etc. in order to provideathorough understanding of the
`present- invention. It will be evident, however, that the preSentinvention may be
`practiced without these details. In other instances, well-known process steps,
`equipment, etc,- have not been describedVin'p’articular1detail soras not to' obscure the '
`present invention.
`I
`Figure 1 illustrates, in flOw diagram form, one lithography method for
`semiconductor fabrication. For one embodiment, the method of Figure 1 may be .
`
`'
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`' used for semiconductor fabrication using a semiconductor wafer, ’such'as the ,
`‘ semiconduCtor Water illustratedin Figures 2,3 4,_and 5 for example
`For the method of Figure 1,-a semiconductor substrate 200.15 provided as
`' illustrated inF1gure 2. Substrate2-00 may include any suitable semiconductor ,
`7 material, 1nc1ud1ng silicon (Si) for example
`As 1llustrated1n Figure 2,51 layer 210maybe formedover substrate 200 Layer
`210may include any suitable material and may beformed to any suitablethickness
`using any suitable technique depending,f_c'>r example, on thepurposeof layer 210in
`fabricating a desired semiconductor device. Layer 210 mayvinclude'one or more
`layers, including device, dielectric, Contact, interconnect,_and/or-via layers for,
`example Layer 21015 not necessary to practice the methbd of Figure 1.
`As one example, layer 210 may include a layer thatls to be patterned1n
`accordance with a subsequent mask layer formed Over layer 210. Layer 210 may
`include a dielectric layer, including silicondioxide ($102) for example, that15 to be
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`/ patterned for a contact Or interconnect layer, for example. 1 Layer 210 may also
`include a layer"OVer which a via or interconnect layeiflis'to be formed: Layer 210 may
`' have exposed regions to be electrically coupled by'vi'as or interconnects formed in. a
`V subseéiuentlayer;
`'
`For step 100 of Figure 1, a firstimaginglayer'15formed over the
`Semiconductor wafer As illustrated'in Figure 2, an imaginglayer 220is formed
`over layer210Imaging layer 220 may include anysuitablematerial formed to any
`suitable thickness using any suitable technique
`, For one embodimEnt, imaging layer 220 may include a suitable positive
`photoresist’, for example, that hasibeen spun-onto afth'ick‘ness of approximately
`10,000 Angstroms (A) Other suitablethicknesses of positive photoresist, for
`. examplein the range of approximately 1,000 A toapproxunately 30,000 A,may also .
`be used. For other embodiments,imaging layer 220 may includea suitable negative
`photoresist, a suitable radiation-sensmve polyimide, or other suitable radiatibn-
`sensitive materials fOr example For thisdetaileddescription, the term radiation
`' encompasses any energy radiated1n the form of waves-or particles. The term '
`radiation may include ultraviolet (UV) light, x~ray radiation, electron. beam or e-
`beam radiation vacuum UV radiationor ion beam radiation forexample.
`For step 110 of Figure 1, the firstimaging layer15 patternedin accordance with
`v a first pattern to form a first patterned layer Any suitable hthographic patterning
`techniq’Ue may be used and maydepend, for example, on the material used for
`A imaging‘ layer 220.
`Where a positive—tone imaging, material is used for imaging layer 220, Such as
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`V a suitable positive pho'to'resist or asuitable positive-tone radiation—sensitive
`polyimide for example, imaging layer 220 may-be exposed to‘radiation through a
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`‘first mask having opaque feature 222 and clear features221 and 223 as illustrated'1n
`' F1gure 2. The first mask may include anySuitablepatternofopaque and clear
`features that may depend, for example, an the des1red pattern to be formed in
`Z "imaging layer 220. For this detailed descnptwn the term mask encompasses a
`reticle, forexample, for use in astep-and-repeatpIOJECthTl system.
`' Imaging layer 220 may be exposed through the first mask usingany suitable
`formof radiation, The radiation servesto render soiubleinasuitable developer
`that portion of'1magin'g layer220 exposedtoradiati611 through clear features 221 and I
`223 That portion of'imaging layer 220that has not been exposed to radiation
`
`' remainsrelatively insoluble111 the developer.-
`I
`Imaging layerr'ZZO- may then be developedym: a suitable developer to ”form a
`.first patternedlayer 2325- As illustrated in Figure '31 that portion ofiiihaging layer 220
`. ‘éxposed to. radiation through the firS‘li'm‘aSl": is soluble in the I'developer and is thus
`dissolved from imaging layer 220.* That portion of jinagin'g layer 220 that has not
`been exposed toradiationis relatively insoluble111 the developer, and thus remains
`to form firSt patterned layer 232.
`For other embodiments Wherea'éuitahlenegative-tone imaging material is
`used _for'imaginglayer220, the negatwe-toneimaging layer220maybe exposed to V
`any suitable form ofradiation through a smtablenegatives-ton'e mask havingopaque
`features 221 and 223 and a dear feature 222, forexample Negative-toneimaging
`materials may include a suitable negative photores1st a suitable positive photoresist
`that15to besubjected to an imagereversal process,or a suitable negative—tone
`radiation-sensitive polyimide for example Thenegative-tone imaginglayer 220
`may be developed111 a suitabie developer to form afirst patternedlayer232 as
`illustrated'in Figure 3. That portion of imaginglayer 220 exposed to radiation
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`through the first mask is relatively in501uble1nthe developer and thus remains to
`_ ,formfirst patternedlayer 232 That portion ofimagmg layer 220 that has not been
`1'
`' exposed to radiat-ion'IS soluble1nthe developer and'is thus dissolved from1maging ,
`layer 220.
`.
`» For step 120 ofFigure 1, the first patterned layer15 stabilized Any suitable .
`stabilization techniquemay be used and may depend, for example, on the material
`1 used to form firstpatterned layer 232.
`First patterned layer 23211may be stabilized towithstandsubsequent
`lithographic processing steps. First patterned layer 232:1r1ay be, stabilized. to
`withstand ’fc’hemical transformation as a reSult of any subsequent‘exposure to
`radiation, for example. First patterned layer 232 mayalso be stabilized to withstand
`dissolution by solvents during a subsequent spin-on of photoresist, for example.
`First patterned layer 232 may further be. stabilized to withstand dissolution by a
`’ subsequent developer, to: example
`Where apositivephotoresistis used to form first patterned layer 232, a
`suitable deep ultraviolet(DUV) stab111zat1ontechnique may be used to stabilize first
`patterned layer 232Forone embodiment, first patterned layer 232 maybe irradiated
`p with a DUV light.source having awavelength111 therange of approx1mately 200
`nanometers to .japproxi'mately 400 nanometers, for exampleand simultaneously
`. heated with a temperature ramped up toiapproxirnately230 degrees Celsius, for
`2 example, over an approximately 60 second period of time tor example First
`1 patterned layer 232 may be irradiated at that-peaktemperature for approximately 5
`seconds, for example. For other embodiments, first patterned layer 232 may be
`irradiated vvith a UV light source having other suitable wavelengths, ton-example in
`the range of approximately 100 nanometers-tor approximately‘SOO nanometers,1and'
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`= maybe heated to‘oth'er suitable peak temperatures, forgexample1n'the'Iange of
`I approximately 120degrees Celsius to approximately 25D degrees Celsius; First
`' patterned layer 232 maybe-1rrad1ated at :a peak temperature for any suitable length of
`2
`time, forexample111 the range of approxrmately 2secondsto approximately 60
`I “seconds.
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`. Where fiISt patterned layer 232includes apositivephotoresrst first patterned
`layer 232 maybestabilized using other suitabletechniques. As one example, a .PFiSt
`technique may be used to foIm a carbonfluorine(CF4) skin over[Wei-11$ layer
`® 232 bye'xpOsingthe photoresist to afluorine ambient11191151541techniquemay also
`-» be used-to form a silicon dioxide (SiOz)skin over firstpait’ernedlayer 232 For other
`10-
`embodiments, other suitable teohniquesmay be usedto. formahardened skin over.
`. first patterned layer 232 to stabilize first patterned layer232. For stillother
`embodiments, the positive photo-resist of first patterned layer 232may be subjected
`to a suitable heat treatment or.to a suitable radiation treatment to stabilize first
`.
`. patterned layer 232.
`,
`_
`Stabilizing positive photoresist for first patterned. layer 232 serves.to
`I neutralize photoactive' compoundsin thephotoresnst of first.patternedlayer 232.
`: Upon any subsequent expoSureto radiationthen, firstpatterned layer 232 undergoes
`I minimal, if any, chemicaltransformation The photoresist of firstpatteIned layer
`.
`232 may alsobe Subjected to a subsequent spin-on ofphotores1st with relatively
`2 minimal, ifany,dissolution bysolventsof the snbsequent- photoresist layer. The
`photoresist of first patterned layer232 may furthéI be subjected to a subsequent
`development With relatively Ininimal if any, dissolutionby a developer
`FOr other embodiments where a negative photoresistis used to form first
`’ patterned layer 232‘, firstpatternedlayer 232 may be stabilized while first patterned
`
`' 15 .
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`'layer232‘is beingpatterned. Because first patterned layer 2-32 is formed 'from' that
`
`: portion'of negative photoresist thathas-V been exposedto radiation and Ie-ndered'
`'
`relatively insoluble in a developer, the negative photoresist :of first patterned layer
`232Is able to withstand chemicaltransformation from any subsequent-exposureto V
`radiation andIS able to withstanddiSSolution bya subsequent developer. The
`photoresist of first patterned layer232, however, may be subjected to aysuitable
`stabilization technique as necessary-t0 Withstand disSolution by'solvents‘during‘ a
`
`subsequent spin-0n of photoIesist, for example. {8 suitable_DUV stabilization
`technique, a suitable prist technique,a suitable 2Mue, a suitable :heat
`‘ treatment, or a suitable radiation treatment, for example,may be used to stabilize
`the negative photoresist of first patterned layer 232.
`a For still other embodiments'where a negativertonefradiation-sensitive
`'polyimideis used to form first patteInedv layer 232,"first patternedlayer 232 may be
`stabilized while firstpatterned layer 232'is being patterned Becausefirst patterned
`' layer 23215 forrned frOm that portion ofpolyunicle thathas. beenexpoSed to
`_ radiation and rendered Ielat'ivel-yinsolublein adeveloper the polinnide of first
`patterned layer23215 able to withstand chemical transformation from any
`subsequent exposure to radiation and'1s able to Withstand dissolutionby a
`’ subsequent developer; The polyitnide off- first patterned layer 232,:however, may be
`subjected to 'a suitable stabilization technique, Such as by heat treatment for final
`
`15
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`curing for example, as' necessary to withstand dissblutiOnj-bythe’ formation ‘of a'
`1 subsequent layer over first patterned layer 232g'forexarnplef
`TFOI step 130 of‘iF-igure 1, a second imaging layer iis‘formed oVer the
`semiconductor wafer. As illustrated in Figure 4, an irnagingi'layer 240 is formed
`V over first patterned ,layer232. and .Qver'lay'er 2'10. ‘Iinaging'layer 240,:is formed to
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`surround; firstpatterned layer'232 be the sidewalls of’firstpatterned layer 232. I
`Imaging layer 240 may optimally befonned to coyer the top off- first-patterned layer
`' 232 as well; imaging layer 240 may include any suitable material fOrmedto any .'
`"suitable thickness using any Suitable technique.-
`.
`For one enibod'inient, imaging layer 240 mayiifnclude a suitable Positive
`, photoresist, for example, that has been spun-onto 'a thickness of approximately
`‘ 10,000 A. Other suitable thicknesses of'lao'sitive photoresist, fofr examplethicknesses
`approximately equalito or greater than that of first patterned layer 232, may also be
`used. Imaging layer 240may'inelude other suitable‘rhaterials, including .a suitable .
`neg‘ativevphotoresis‘t, a suitable radiation-sensitive polyiini‘de, or other suitable
`'1 radiation-sensitive materials for exar‘nple.‘ For embodhnents where photoresist is
`‘ spun-on to form iinaging' layer, 240,- first patterned; layer 232 haspreferably been
`'istabili’zed to Withstand dissolution by solvents during'spin-on of the ‘photoreSist for .
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`imaging- laye‘r-240'.‘ -
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`‘ Fer step l400f Figure-1, the second irnagi‘ng-layer is patterned in accordance.
`with a seeonti pattern to forin a second patternedla‘yerf Any suitable lithographic '
`patterning'technique:may be used and may Hepen