EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`
`References cited herein:
` U.S. Pat. No. 6,853,142 (“’142 Patent”)
`
` U.S. Pat. No. 6,413,382 (“Wang”)
`
` A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`[21pre.] An apparatus for
`generating a strongly-ionized
`plasma, the apparatus comprising:
`
`[21a.] an anode;
`
`Wang in view of Kudryavtsev
`
`The combination of Wang and Kudryavstev discloses an
`apparatus for generating a strongly-ionized plasma.
`
`Wang at Fig. 1
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at
`least 10 times the background power PB, more
`preferably at least 100 times, and most preferably 1000
`times to achieve the greatest effect of the invention. A
`background power PB of 1kW will typically be
`sufficient to support a plasma with the torpedo
`magnetron and a 200 mm wafer although with little if
`any actual sputter deposition.”)
`
`Wang at 7:28-30 (“ the application of the high peak
`power PP instead quickly causes the already existing
`plasma to spread and increases the density of the
`plasma”)
`
`Wang at 7:31-39 (“In one mode of operating the reactor,
`during the background period, little or no target
`sputtering is expected. The SIP reactor is advantageous
`for a low-power, low-pressure background period since
`the small rotating SIP magnetron can maintain a plasma
`at lower power and lower pressure than can a larger
`stationary magnetron. However, it is possible to
`combine highly ionized sputtering during the pulses
`with significant neutral sputtering during the
`background period.”)
`
`The combination of Wang and Kudryavstev discloses an
`anode.
`
`‘142 Patent at 2:21-22 (“FIG. 1 illustrates a cross-
`sectional view of a known plasma generating apparatus
`
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`GILLETTE 1221
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`

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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`100…”)
`
`’142 Patent at 2:45-46 (“An anode 130 is positioned in
`the vacuum chamber 104 proximate to the cathode
`114.”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (A grounded shield 24 protects the
`chamber walls from sputter deposition and also acts as a
`grounded anode for the cathode of the negatively biased
`target 14.”). (emphasis added)
`
`[21b.] a cathode that is positioned
`adjacent to the anode and forming a
`gap there between;
`
`The combination of Wang and Kudryavstev discloses a
`cathode that is positioned adjacent to the anode and
`forming a gap there between.
`
`‘142 Patent at 2:21-22 (“FIG. 1 illustrates a cross-
`sectional view of a known plasma generating apparatus
`100…”)
`
`’142 Patent at 2:45-46 (“An anode 130 is positioned in
`the vacuum chamber 104 proximate to the cathode
`114.”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (A grounded shield 24 protects the
`chamber walls from sputter deposition and also acts as a
`grounded anode for the cathode of the negatively biased
`target 14.”). (emphasis added)
`
`Wang at 3:63-65 (“A pedestal electrode 18 supports a
`wafer 20 to be sputter coated in planer opposition to the
`target 14 across a processing region 22.”)
`
`The combination of Wang and Kudryavstev discloses an
`ionization source that generates a weakly-ionized
`plasma proximate to the cathode, the weakly-ionized
`plasma reducing the probability of developing an
`electrical breakdown condition between the anode and
`the cathode.
`
`Wang at Fig. 7
`
`- 2 -
`
`[21c.] an ionization source that
`generates a weakly-ionized plasma
`proximate to the cathode, the
`weakly-ionized plasma reducing the
`probability of developing an
`electrical breakdown condition
`between the anode and the cathode;
`
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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`and
`
`[21d.] a power supply that produces
`an electric field across the gap, the
`
`Wang in view of Kudryavtsev
`
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32….”)
`
`Wang at 4:20-21 (“… a reactive gas, for example
`nitrogen is supplied to the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is
`chosen to exceed the minimum power necessary to
`support a plasma... [T]he application of the high peak
`power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at
`least 10 times the background power PB … and most
`preferably 1000 times to achieve the greatest effect of
`the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region
`42 of a high-density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles
`during the initial arcing, which may dislodge large
`particles from the target or chamber… The initial
`plasma ignition needs be performed only once and at
`much lower power levels so that particulates produced
`by arcing are much reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been
`ignited at the beginning of sputtering prior to the
`illustrated waveform, no more plasma ignition occurs.”).
`
`Wang at 7:58-61 (“… DC power supply 100 is
`connected to the target 14 … and supplies an essentially
`constant negative voltage to the target 14 corresponding
`to the background power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW
`will typically be sufficient to support a plasma…”)
`The combination of Wang and Kudryavstev discloses a
`power supply that produces an electric field across the
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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`electric field generating excited
`atoms in the weakly-ionized plasma
`and generating secondary electrons
`from the cathode, the secondary
`electrons ionizing the excited
`atoms, thereby creating the
`strongly-ionized plasma.
`
`Wang in view of Kudryavtsev
`
`gap, the electric field generating excited atoms in the
`weakly-ionized plasma and generating secondary
`electrons from the cathode, the secondary electrons
`ionizing the excited atoms, thereby creating the
`strongly-ionized plasma.
`
`‘142 Patent at 1:41-43 (“Magnetron sputtering systems
`use magnetic fields that are shaped to trap and to
`concentrate secondary electrons, which are produced by
`ion bombardment of the target surface.”)
`
`‘142 Patent at 1:37-40 (“The plasma is replenished by
`electron-ion pairs formed by the collision of neutral
`molecules with secondary electrons generated at the
`target surface.”)
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP
`is at least 10 times the background power level PB, …
`most preferably 1000 times to achieve the greatest
`effects of the invention. A background power PB of 1
`kW will typically be sufficient…”)
`
`Wang at 7:36-39 (“However, it is possible to combine
`highly ionized sputtering during the pulses with
`significant neutral sputtering during the background
`period.”)
`
`Kudryavtsev at Figs. 1, 6
`
`Kudryavtsev at 34, right col, ¶ 4 (“[s]ince the effects
`studied in this work are characteristic of ionization
`whenever a field is suddenly applied to a weakly ionized
`gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser
`sparks, etc.”)
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary
`n2 [excited atom density] values … there is an explosive
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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`increase in ne [plasma density]. The subsequent
`increase in ne then reaches its maximum value, equal to
`the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization
`rate during the initial stage.”)
`
`Kudryavtsev at Abstract (“in a pulsed inert-gas
`discharge plasma at moderate pressures… [i]t is shown
`that the electron density increases explosively in time
`due to accumulation of atoms in the lowest excited
`states.”)
`
`Kudryavtsev at Equation 1
`
`Kudryavtsev at 30, right col, last ¶ (“n2, and ne are the
`atomic densities in the … first excited states and the
`electron density, respectively … 2e [is] the rate
`coefficient[]….”)
`
`See evidence cited in [21pre] of claim 21.
`
`If one of ordinary skill, applying Wang’s power levels
`did not experience Kudryavtsev’s “explosive increase”
`in plasma density, it would have been obvious to adjust
`the operating parameters, e.g., increase the pulse length
`and/or pressure, so as to trigger Kudryavtsev’s fast stage
`of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization
`in Wang so as to increase plasma density and thereby
`increase the sputtering rate. Further, use of
`Kudryavtsev’s fast stage in Wang would have been a
`combination of old elements that yielded predictable
`results of increasing plasma density and multi-step
`ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this
`work are characteristic of ionization whenever a field is
`suddenly applied to a weakly ionized gas, they must be
`allowed for when studying emission mechanisms in
`pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4. Because Wang applies
`voltage pulses that “suddenly generate an electric field,”
`one of ordinary skill reading Wang would have been
`motivated to consider Kudryavtsev and to use
`
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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`22. The apparatus of claim 21
`wherein the power supply generates
`a constant power.
`
`23. The apparatus of claim 21
`wherein the power supply generates
`a constant voltage.
`
`25. The apparatus of claim 21
`wherein the electric field comprises
`a pulsed electric field.
`
`26. The apparatus of claim 21
`wherein a rise time of the electric
`field is chosen to increase an
`ionization rate of the excited atoms
`in the weakly-ionized plasma.
`
`Kudryavtsev’s fast stage in Wang.
`The combination of Wang and Kudryavstev discloses
`the power supply generates a constant power.
`
`See evidence cited in claim 21
`
`‘142 Patent at Fig. 4
`
`‘142 Patent at 12:47-51
`
`‘142 Patent, 12:66-67(“Between time t1 and time t2, the
`voltage 326, the current 328, and the power 330 remain
`constant….”)
`
`Wang at Figs. 1 and 7
`The combination of Wang and Kudryavstev discloses
`the power supply generates a constant voltage.
`
`See evidence cited in claim 21
`
`Wang at 7:61-62 (“pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`The combination of Wang and Kudryavstev discloses
`the electric field comprises a pulsed electric field.
`
`See evidence cited in claim 21
`
`Wang at Fig. 7
`
`Wang at 7:61-63 (“The pulsed DC power supply 80
`produces a train of negative voltage pulses….”)
`
`The combination of Wang and Kudryavstev discloses a
`rise time of the electric field is chosen to increase an
`ionization rate of the excited atoms in the weakly-
`ionized plasma.
`
`See evidence cited in claim 21
`
`Kudryavstev at Fig. 1
`
`Wang at 5:23-26 (“The illustrated pulse form is
`idealized. Its exact shape depends on the design of the
`pulsed DC power supply 80, and significant rise times
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`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`27. The apparatus of claim 21
`wherein the strongly-ionized
`plasma is substantially uniform
`proximate to the cathode.
`
`28. The apparatus of claim 21
`wherein a dimension of the gap
`between the anode and the cathode
`is chosen to increase an ionization
`rate of the excited atoms in the
`weakly-ionized plasma.
`
`and fall times are expected.”)
`
`The combination of Wang and Kudryavstev discloses
`the strongly-ionized plasma is substantially uniform
`proximate to the cathode.
`
`See evidence cited in claim 21
`
`Wang at Figs. 6, 7
`
`Wang at 5:23-26 (“The illustrated pulse form is
`idealized. Its exact shape depends on the design of the
`pulsed DC power supply 80, and significant rise times
`and fall times are expected.”)
`
`Wang at 4:49-51 (“The rotation scans the HDP region
`42 about the face of the target 14 to more evenly erode
`the target 14 and to produce a more uniform sputter
`coating on the wafer 20.”)
`
`The combination of Wang and Kudryavstev discloses a
`dimension of the gap between the anode and the cathode
`is chosen to increase an ionization rate of the excited
`atoms in the weakly-ionized plasma.
`
`See evidence cited in claim 21
`
`See evidence cited in claim 26
`
`29. The apparatus of claim 21
`wherein the ionization source is
`chosen from the group comprising
`an electrode coupled to a DC power
`supply, an electrode coupled to an
`AC power supply, a UV source, an
`X-ray source, an electron beam
`source, an ion beam source, an
`inductively coupled plasma source,
`a capacitively coupled plasma
`source, and a microwave plasma
`source.
`
`The combination of Wang and Kudryavstev discloses
`the ionization source is chosen from the group
`comprising an electrode coupled to a DC power supply,
`an electrode coupled to an AC power supply, a UV
`source, an X-ray source, an electron beam source, an ion
`beam source, an inductively coupled plasma source, a
`capacitively coupled plasma source, and a microwave
`plasma source.
`
`See evidence cited in claim 21
`
`Wang at 7:58 (“… DC power supply 100 is connected to
`the target 14.”)
`
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`Wang at Figs. 1 and 7
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`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`30. The apparatus of claim 21
`further comprising a magnet that is
`positioned to generate a magnetic
`field proximate to the weakly-
`ionized plasma, the magnetic field
`trapping electrons in the weakly-
`ionized plasma proximate to the
`cathode.
`
`Wang in view of Kudryavtsev
`
`The combination of Wang and Kudryavstev discloses a
`magnet that is positioned to generate a magnetic field
`proximate to the weakly-ionized plasma, the magnetic
`field trapping electrons in the weakly-ionized plasma
`proximate to the cathode.
`
`See evidence cited in claim 21
`
`‘142 Patent at 1:41-43 [in the Background of the
`Invention] (“Magnetron sputtering systems use
`magnetic fields that are shaped to trap and concentrate
`secondary electrons…”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is
`thus creating a region 42 of a high-density plasma
`(HDP)….”)
`
`Wang at Fig. 1
`
`[31pre]. A method for generating a
`strongly-ionized plasma, the
`method comprising:
`
`The combination of Wang and Kudryavstev discloses a
`method for generating a strongly-ionized plasma.
`
`See evidence cited in limitation [21pre] of claim 21.
`
`[31a] ionizing a feed gas to
`generate a weakly-ionized plasma
`proximate to a cathode, the weakly-
`ionized plasma reducing the
`probability of developing an
`electrical breakdown condition
`proximate to the cathode;
`
`[31b] and applying an electric field
`across the weakly-ionized plasma
`in order to excite atoms in the
`weakly-ionized plasma and to
`generate secondary electrons from
`the cathode, the secondary electrons
`ionizing the excited atoms, thereby
`creating the strongly-ionized
`plasma.
`33. The method of claim 31
`wherein the applying an electric
`field comprises applying the
`
`The combination of Wang and Kudryavstev discloses
`ionizing a feed gas to generate a weakly-ionized plasma
`proximate to a cathode, the weakly-ionized plasma
`reducing the probability of developing an electrical
`breakdown condition proximate to the cathode.
`
`See evidence cited in limitation [21pre] of claim 21.
`
`The combination of Wang and Kudryavstev discloses
`applying an electric field across the weakly-ionized
`plasma in order to excite atoms in the weakly-ionized
`plasma and to generate secondary electrons from the
`cathode, the secondary electrons ionizing the excited
`atoms, thereby creating the strongly-ionized plasma.
`
`See evidence cited in limitation [21pre] of claim 21.
`
`The combination of Wang and Kudryavstev discloses
`the applying an electric field comprises applying the
`
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`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`electric field at a constant power.
`
`electric field at a constant power.
`
`See evidence cited in claim 31
`
`‘142 Patent at Fig. 4
`
`‘142 Patent at 12:47-51
`
`‘142 Patent, 12:66-67(“Between time t1 and time t2, the
`voltage 326, the current 328, and the power 330 remain
`constant….”)
`
`Wang at Figs. 1 and 7
`
`The combination of Wang and Kudryavstev discloses
`the applying an electric field comprises applying the
`electric field at a constant voltage.
`
`See evidence cited in claim 31
`
`Wang at 7:61-62 (“pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`The combination of Wang and Kudryavstev discloses
`the applying the electric field comprises applying an
`electrical pulse across the weakly-ionized plasma.
`
`See evidence cited in claim 31
`
`‘142 Patent at 1:41-43 (“Magnetron sputtering systems
`use magnetic fields that are shaped to trap and to
`concentrate secondary electrons, which are produced by
`ion bombardment of the target surface.”)
`
`‘142 Patent at 1:37-40 (“The plasma is replenished by
`electron-ion pairs formed by the collision of neutral
`molecules with secondary electrons generated at the
`target surface.”)
`
`See evidence cited in limitation [21d] of claim 21
`
`The combination of Wang and Kudryavstev discloses
`selecting at least one of a pulse amplitude and a pulse
`width of the electrical pulse in order to increase an
`
`34. The method of claim 31
`wherein the applying an electric
`field comprises applying the
`electric field at a constant voltage.
`
`35. The method of claim 31
`wherein the applying the electric
`field comprises applying an
`electrical pulse across the weakly-
`ionized plasma.
`
`36. The method of claim 35 further
`comprising selecting at least one of
`a pulse amplitude and a pulse width
`of the electrical pulse in order to
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`increase an ionization rate of the
`strongly-ionized plasma.
`
`37. The method of claim 35 further
`comprising selecting at least one of
`a pulse amplitude and a pulse width
`of the electrical pulse in order to
`cause the strongly-ionized plasma
`to be substantially uniform in an
`area adjacent to a surface of the
`cathode.
`
`38. The method of claim 31
`wherein the strongly-ionized
`plasma is substantially uniform
`proximate to the cathode.
`
`Wang in view of Kudryavtsev
`
`ionization rate of the strongly-ionized plasma.
`
`See evidence cited in claim 35
`
`Wang at 7:28-30 (“… the application of the high peak
`power PP instead quickly causes the already existing
`plasma to spread and increases the density of the
`plasma.”)
`
`Wang at Fig. 6
`
`The combination of Wang and Kudryavstev discloses
`selecting at least one of a pulse amplitude and a pulse
`width of the electrical pulse in order to cause the
`strongly-ionized plasma to be substantially uniform in
`an area adjacent to a surface of the cathode.
`
`See evidence cited in claim 35
`
`Wang at Figs. 6, 7
`
`Wang at 5:23-26 (“The illustrated pulse form is
`idealized. Its exact shape depends on the design of the
`pulsed DC power supply 80, and significant rise times
`and fall times are expected.”)
`
`Wang at 4:49-51 (“The rotation scans the HDP region
`42 about the face of the target 14 to more evenly erode
`the target 14 and to produce a more uniform sputter
`coating on the wafer 20.”)
`
`The combination of Wang and Kudryavstev discloses
`the strongly-ionized plasma is substantially uniform
`proximate to the cathode.
`
`See evidence cited in claim 31
`
`Wang at 4:49-51 (“The rotation scans the HDP region
`42 about the face of the target 14 to more evenly erode
`the target 14 and to produce a more uniform sputter
`coating on the wafer 20.”)
`
`39. The method of claim 31 further
`comprising generating a magnetic
`field proximate to the weakly-
`
`The combination of Wang and Kudryavstev discloses
`generating a magnetic field proximate to the weakly-
`ionized plasma, the magnetic field trapping electrons in
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`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`ionized plasma, the magnetic field
`trapping electrons in the weakly-
`ionized plasma.
`
`the weakly-ionized plasma.
`
`See evidence cited in claim 31
`
`[41pre.] An apparatus for
`generating a strongly-ionized
`plasma, the apparatus comprising:
`
`‘142 Patent at 1:41-43 [in the Background of the
`Invention] (“Magnetron sputtering systems use
`magnetic fields that are shaped to trap and concentrate
`secondary electrons…”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is
`thus creating a region 42 of a high-density plasma
`(HDP)….”)
`
`The combination of Wang and Kudryavstev discloses an
`apparatus for generating a strongly-ionized plasma.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at
`least 10 times the background power PB, more
`preferably at least 100 times, and most preferably 1000
`times to achieve the greatest effect of the invention. A
`background power PB of 1kW will typically be
`sufficient to support a plasma with the torpedo
`magnetron and a 200 mm wafer although with little if
`any actual sputter deposition.”)
`
`Wang at 7:28-30 (“ the application of the high peak
`power PP instead quickly causes the already existing
`plasma to spread and increases the density of the
`plasma”)
`
`Wang at 7:31-39 (“In one mode of operating the reactor,
`during the background period, little or no target
`sputtering is expected. The SIP reactor is advantageous
`for a low-power, low-pressure background period since
`the small rotating SIP magnetron can maintain a plasma
`at lower power and lower pressure than can a larger
`stationary magnetron. However, it is possible to
`combine highly ionized sputtering during the pulses
`with significant neutral sputtering during the
`background period.”)
`
`[41a.] means for ionizing a feed gas
`to generate a weakly ionized
`plasma proximate to a cathode, the
`
`The combination of Wang and Kudryavstev discloses
`means for ionizing a feed gas to generate a weakly
`ionized plasma proximate to a cathode, the weakly
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`weakly ionized plasma reducing the
`probability of developing an
`electrical breakdown condition
`proximate to the cathode; and
`
`Wang in view of Kudryavtsev
`
`ionized plasma reducing the probability of developing
`an electrical breakdown condition proximate to the
`cathode.
`
`Claimed function
`
`Claim 41 recites “means for ionizing a feed gas to
`generate a weakly ionized plasma proximate to a
`cathode, the weakly ionized plasma reducing the
`probability of developing an electrical breakdown
`condition proximate to the cathode.”
`
`The combination of Wang and Kudryavtsev teach the
`function corresponding to the “means for ionizing…”
`limitation.
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32….”)
`
`Wang at 4:20-21 (“… a reactive gas, for example
`nitrogen is supplied to the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is
`chosen to exceed the minimum power necessary to
`support a plasma... [T]he application of the high peak
`power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at
`least 10 times the background power PB … and most
`preferably 1000 times to achieve the greatest effect of
`the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region
`42 of a high-density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles
`during the initial arcing, which may dislodge large
`particles from the target or chamber… The initial
`plasma ignition needs be performed only once and at
`much lower power levels so that particulates produced
`
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`by arcing are much reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been
`ignited at the beginning of sputtering prior to the
`illustrated waveform, no more plasma ignition occurs.”).
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the means for ionizing:
`
` power supply, generating the voltage, current and
`power values shown in Fig. 4 (e.g., between t1 – t2 and t6
`– t7), electrically coupled to cathode (e.g., 204), anode
`(e.g., 216) and/or an electrode (e.g., 452, 452’), wherein
`the cathode, anode and/or electrode are arranged relative
`to a sputtering target as shown in Figs. 2A-2D and 6A-
`6D, and as described in the text of the ‘142 Patent at
`5:5-36, 16:24-40, 17:40-18:12, 18:13-34, and 18:35-46.
`
`The combination of Wang and Kudryavstev discloses
`the structure corresponding to the “means for
`ionizing…” limitation. For example:
`
`Wang at Fig. 7
`
`Wang at 7:58-61 (“… DC power supply 100 is
`connected to the target 14 … and supplies an essentially
`constant negative voltage to the target 14 corresponding
`to the background power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW
`will typically be sufficient to support a plasma…”)
`
`Any difference between Wang’s and the ‘142 Patent’s
`mechanical arrangement of the anode and cathode is
`nothing more than the mechanical rearrangement of
`well-known components. Rearranging Wang’s
`components to match that of the ‘142 Patent would be
`obvious to one of ordinary skill.
`The combination of Wang and Kudryavstev discloses
`means for applying an electric field across the weakly
`ionized plasma in order to excite atoms in the weakly
`
` a
`
`[41b.] means for applying an
`electric field across the weakly
`ionized plasma in order to excite
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`atoms in the weakly ionized plasma
`and to generate secondary electrons
`from the cathode, the secondary
`electrons ionizing the excited
`atoms, thereby creating the
`strongly-ionized plasma.
`
`Wang in view of Kudryavtsev
`
`ionized plasma and to generate secondary electrons
`from the cathode, the secondary electrons ionizing the
`excited atoms, thereby creating the strongly-ionized
`plasma.
`
`Claimed function
`
`Claim 41 recites “means for applying an electric field
`across the weakly ionized plasma in order to excite
`atoms in the weakly ionized plasma and to generate
`secondary electrons from the cathode, the secondary
`electrons ionizing the excited atoms, thereby creating
`the strongly-ionized plasma.”
`
`The combination of Wang and Kudryavtsev teach the
`function corresponding to the “means for applying …”
`
`‘142 Patent at 1:41-43 (“Magnetron sputtering systems
`use magnetic fields that are shaped to trap and to
`concentrate secondary electrons, which are produced by
`ion bombardment of the target surface.”)
`
`‘142 Patent at 1:37-40 (“The plasma is replenished by
`electron-ion pairs formed by the collision of neutral
`molecules with secondary electrons generated at the
`target surface.”)
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP
`is at least 10 times the background power level PB, …
`most preferably 1000 times to achieve the greatest
`effects of the invention. A background power PB of 1
`kW will typically be sufficient…”)
`
`Wang at 7:36-39 (“However, it is possible to combine
`highly ionized sputtering during the pulses with
`significant neutral sputtering during the background
`period.”)
`
`Kudryavtsev at Figs. 1, 6
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`
`Kudryavtsev at 34, right col, ¶ 4 (“[s]ince the effects
`studied in this work are characteristic of ionization
`whenever a field is suddenly applied to a weakly ionized
`gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser
`sparks, etc.”)
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary
`n2 [excited atom density] values … there is an explosive
`increase in ne [plasma density]. The subsequent
`increase in ne then reaches its maximum value, equal to
`the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization
`rate during the initial stage.”)
`
`Kudryavtsev at Abstract (“in a pulsed inert-gas
`discharge plasma at moderate pressures… [i]t is shown
`that the electron density increases explosively in time
`due to accumulation of atoms in the lowest excited
`states.”)
`
`Kudryavtsev at Equation 1
`
`Kudryavtsev at 30, right col, last ¶ (“n2, and ne are the
`atomic densities in the … first excited states and the
`electron density, respectively … 2e [is] the rate
`coefficient[]….”)
`
`See evidence cited in [41pre] of claim 41.
`
`If one of ordinary skill, applying Wang’s power levels
`did not experience Kudryavtsev’s “explosive increase”
`in plasma density, it would have been obvious to adjust
`the operating parameters, e.g., increase the pulse length
`and/or pressure, so as to trigger Kudryavtsev’s fast stage
`of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization
`in Wang so as to increase plasma density and thereby
`increase the sputtering rate. Further, use of
`Kudryavtsev’s fast stage in Wang would have been a
`combination of old elements that yielded predictable
`results of increasing plasma density and multi-step
`ionization.
`
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`
`
`EXHIBIT D.06
`U.S. Patent No. 6,853,142
`
`‘142 Claims 21, 22, 23, 25-30, 31,
`33-39, 41, and 43
`
`Wang in view of Kudryavtsev
`
`
`Kudryavtsev states, “[s]ince the effects studied in this
`work are characteristic of ionization whenever a field is
`suddenly applied to a weakly ionized gas, they must be
`allowed for when studying emission mechanisms in
`pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4 (Ex. 1004). Because
`Wang applies voltage pulses that “suddenly generate an
`electric field,” one of ordinary skill reading Wang
`would have been motivated to consider Kudryavtsev
`and to use Kudryavtsev’s fast stage in Wang.
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the “means for applying…”:
`
`pulsed power supply (e.g., 202), generating the voltage,
`current and power values shown in Fig. 4 (e.g., between
`t2 – t4), electrically coupled to a cathode (e.g., 204) and
`anode (e.g., 216), wherein the cathode and anode are
`arranged relative to a sputtering target as shown in Figs.
`2A-2D and 6A-6D, and as described in the text of the
`‘142 Patent at 6:57-7:31, 8:16-25, 12:1-16, 13:25-55,
`13:63-14:5, 17:12-33, 19:3-14, and 19:22-32
`
`The combination of Wang and Kudryavstev teach the
`structure corresponding limitation [41b] of claim 41.
`For example:
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`Any difference between Wang’s and the ‘142 Patent’s
`mechanical arrangement of the anode and cathode is
`nothing more than the mechanical rearrangement of
`well-known components. Rearranging Wang’s
`components to match that of the ‘142 Patent would be
`obvious to one of ordinary skill.
`
`The combination of Wang and Kudryavstev discloses
`
`43.