throbber
EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`
`References cited herein:
` U.S. Pat. No. 6,853,142 (“’142 Patent”)
`
` D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
` U.S. Pat. No. 6,190,512 (“Lantsman”)
`
` Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
` Milton Ohring, The Material Science of Thin Films, Academic Press, 1992 (“Ohring”)
`
` Donald L. Smith, Thin-Film Deposition: Principles & Practice, McGraw Hill, 1995
`(“Smith”)
`
`
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`[1pre.] An apparatus for
`generating a strongly-ionized
`plasma in a chamber, the apparatus
`comprising:
`
`Mozgrin in view of Lantsman
`
`The combination of Mozgrin and Lantsman discloses an
`apparatus for generating a strongly-ionized plasma in a
`chamber.
`
`‘142 Patent at claim 18 (“wherein the peak plasma
`density of the strongly-ionized plasma is greater than
`about 1012 cm˗3”)
`
`Mozgrin at Fig 1
`
`Mozgrin at 400, right col, ¶ 4 (“To study the high-current
`forms of the discharge, we used two types of devices: a
`planar magnetron and a ystem with specifically shaped
`hollow electrodes.”)
`
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the
`initial plasma density in the 109 – 1011 cm-3 range.”)
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in
`sputtering … plasma density (exceeding 2x1013 cm-3).”)
`
`Mozgrin at 409, left col, ¶5 (“The high-current diffuse
`discharge (regime 3) is useful for producing large-
`volume uniform dense plasmas ni  1.5x1015cm-3…”).
`
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`GILLETTE 1121
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`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`[1a.] an ionization source that
`generates a weakly-ionized plasma
`from a feed gas, the weakly-
`ionized plasma reducing the
`probability of developing an
`electrical breakdown condition in
`the chamber;
`
`Mozgrin in view of Lantsman
`
`The combination of Mozgrin and Lantsman discloses an
`ionization source that generates a weakly-ionized plasma
`from a feed gas, the weakly-ionized plasma reducing the
`probability of developing an electrical breakdown
`condition in the chamber.
`
`‘142 Patent at 5:18-19 (“The weakly-ionized plasma is
`also referred to as a pre-ionized plasma.”)
`
`‘142 Patent at claim 17 (“wherein the peak plasma
`density of the weakly-ionized plasma is less than about
`1012 cm˗3”)
`
`Mozgrin at Figs. 1, 2, 3, 6, 7
`
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical
`voltage and current oscillograms.… Part I in the voltage
`oscillogram represents the voltage of the stationary
`discharge (pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we
`used a stationary magnetron discharge; … provided the
`initial plasma density in the 109 – 1011 cm˗3 range.”)
`
`Mozgrin at 400, right col, ¶ 3 (“We investigated the
`discharge regimes in various gas mixtures at 10-3 – 10
`torr…”)
`
`402, ¶ spanning left and right cols (“We studied the high-
`current discharge in wide ranges of discharge
`current…and operating pressure…using various gases
`(Ar, N2, SF6, and H2) or their mixtures of various
`composition…”)
`
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge
`had an annular shape and was adjacent to the cathode.”)
`
`Mozgrin at 406, right col, ¶3 (“pre-ionization was not
`necessary; however, in this case, the probability of
`discharge transferring to arc mode increased.”)
`
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on
`magnetron systems of various geometry showed that
`discharge regimes which do not transit to arcs can be
`
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`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`[1b.] a power supply that supplies
`power to the weakly-ionized
`plasma though an electrical pulse
`applied across the weakly-ionized
`plasma, the electrical pulse having
`a magnitude and a rise-time that is
`sufficient to increase the density of
`the weakly-ionized plasma to
`generate a strongly-ionized
`plasma; and
`
`obtained even at high currents.”)
`
`Background:
`
`Manos at 231 (“We shall … [include] information on
`unipolar arcs. These are a problem…”)
`
`Manos at 237 (“When such an arc occurs, the metal
`object is melted at the arc spot. The metal is explosively
`released…. How does one prevent such an arc? There
`are several methods…”)
`
`The combination of Mozgrin and Lantsman discloses a
`power supply that supplies power to the weakly-ionized
`plasma though an electrical pulse applied across the
`weakly-ionized plasma, the electrical pulse having a
`magnitude and a rise-time that is sufficient to increase
`the density of the weakly-ionized plasma to generate a
`strongly-ionized plasma.
`
`‘142 Patent at 1:41-43 (“Magnetron sputtering systems
`use magnetic fields that are shaped to trap and to
`concentrate secondary electrons, which are produced by
`ion bombardment of the target surface.”)
`
`‘142 Patent at 1:37-40 (“The plasma is replenished by
`electron-ion pairs formed by the collision of neutral
`molecules with secondary electrons generated at the
`target surface.”)
`
`Mozgrin at Figs. 1, 2, 3
`
`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage
`oscillogram represents the voltage of the stationary
`discharge (pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was
`made providing square voltage and current pulses with
`[rise] times (leading edge) of 5 – 60 µs…”)
`
`[1c.] a gas line that supplies feed
`gas to the strongly-ionized plasma,
`the feed gas diffusing the strongly-
`ionized plasma, thereby allowing
`
`The combination of Mozgrin and Lantsman discloses a
`gas line that supplies feed gas to the strongly-ionized
`plasma, the feed gas diffusing the strongly-ionized
`plasma, thereby allowing additional power from the
`
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`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`additional power from the pulsed
`power supply to be absorbed by
`the strongly-ionized plasma.
`
`Mozgrin in view of Lantsman
`
`pulsed power supply to be absorbed by the strongly-
`ionized plasma.
`
`It would have been obvious to one of ordinary skill to
`continue to add the feed gas in Mozgrin during
`production of the strongly-ionized plasma (i.e., during
`either of regions 2 or 3). Such addition of the feed gas
`would have both diffused the strongly-ionized plasma
`and allowed additional power from Mozgrin’s repeating
`voltage pulses to be absorbed by the strongly-ionized
`plasma.
`
`‘142 Patent at 2:21-34 (“FIG. 1 illustrates a cross-
`sectional view of a known plasma generating apparatus
`100…. A feed gas from feed gas source 109, such as an
`argon gas source, is introduced into the vacuum chamber
`104 through a gas inlet 110. The gas flow is controlled
`by a valve 112.”)
`
`Mozgrin at Figs. 1 and 3
`
`Mozgrin at ¶ spanning pp. 403-404 (“The … repetition
`frequency was 10 Hz….”).
`
`Mozgrin at 401, left col, ¶ 4 (“[A]pplying a square
`voltage pulse to the discharge gap which was filled up
`with either neutral or pre-ionized gas.”)
`
`Lantsman at Fig. 6
`
`
`Lantsman at 3:9-13 (“[A]t the beginning of processing,
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`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`this switch is closed and gas is introduced into the
`chamber. When the plasma process is completed, the gas
`flow is stopped….”)
`
`Lantsman at 4:36-38 (“To end processing, primary
`supply 10 is disabled, reducing the plasma current and
`deposition on the wafer. Then, gas flow is
`terminated….”)
`
`Lantsman at 5:39-42 (“Sometime thereafter, gas flow is
`initiated and the gas flow and pressure (trace 48) begin to
`ramp upwards toward normal processing levels.”)
`
`Lantsman at 5:42-45
`
`Lantsman at 2:48-51 (“This secondary power supply
`‘pre-ignites’ the plasma so that when the primary power
`supply is applied, the system smoothly transitions to final
`plasma development and deposition.”)
`
`It would have been obvious to one of ordinary skill to
`continue to apply the feed gas during Mozgrin’s regions
`1 and 2 as taught by Lantsman. Such a continuous
`introduction of feed gas balances gas withdrawn by the
`vacuum system (e.g., as shown in the drawings from
`Ohring and Smith, copied below) so as to maintain a
`desired pressure.
`
`One of ordinary skill would have been motivated to
`combine Mozgrin and Lantsman. Both Mozgrin and
`Lantsman are directed to sputtering using plasma. See
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in
`sputtering or layer-deposition technologies provides an
`enhancement in the flux of deposited materials and
`plasma density….”); see also Lantsman at 1:6-8 (“This
`invention relates to reduction of device damage in
`plasma processes, including DC (magnetron or non-
`magnetron) sputtering, and RF sputtering.”). Both
`references also relate to sputtering systems that use two
`power supplies, one for pre-ionization and one for
`deposition. See Lantsman at 4:45-47 (“[T]he secondary
`[power] supply 32 is used to pre-ignite the plasma,
`
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`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`whereas the primary [power] supply 10 is used to
`generate deposition.”); see Mozgrin at Fig. 2. (showing
`the “high-voltage supply unit” and the “stationary
`discharge supply unit”)
`
`Moreover, both Mozgrin and Lantsman are concerned
`with generating plasma while avoiding arcing. See
`Mozgrin at 400, right col, ¶ 3 (“The main purpose of this
`work was to study experimentally a high-power
`noncontracted quasi-stationary discharge in crossed
`fields of various geometry and to determine their
`parameter ranges.”); see also Lantsman at 1:51-59
`(“Furthermore, arcing which can be produced by
`overvoltages can cause local overheating of the target,
`leading to evaporation or flaking of target material into
`the processing chamber and causing substrate particle
`contamination and device damage…. Thus, it is
`advantageous to avoid voltage spikes during processing
`whenever possible.”).
`
`Summarizing, Mozgrin and Lantsman relate to the same
`application. Further, one of ordinary skill would have
`been motivated to use Lantsman’s continuous gas flow in
`Mozgrin so as to maintain a desired pressure in the
`chamber. Finally, use of Lantsman’s continuous gas
`flow in Mozgrin would have been a combination of old
`elements in which each element behaved as expected.
`
`Background:
`Ohring at Fig. 3-13
`
`Smith at Fig. 3-1
`
`
`
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`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`3. The apparatus of claim 1
`wherein the gas line supplies
`additional feed gas that exchanges
`the weakly-ionized plasma while
`applying the electrical pulse
`across.
`
`4. The apparatus of claim 1
`wherein the power supply
`generates a constant power.
`
`
`The combination of Mozgrin and Lantsman discloses the
`gas line supplies additional feed gas that exchanges the
`weakly-ionized plasma while applying the electrical
`pulse across.
`
`See evidence cited in claim 1.
`
`The combination of Mozgrin and Lantsman discloses the
`power supply generates a constant power.
`
`See evidence cited in claim 1.
`
`‘142 Patent at Fig. 4
`
`‘142 Patent at 12:47-51
`
`‘142 Patent, 12:66-67(“Between time t1 and time t2, the
`voltage 326, the current 328, and the power 330 remain
`constant….”)
`
`Mozgrin at Fig. 3
`
`Mozgrin, at 402, right col ¶2 (“Figure 3 shows typical
`voltage and current oscillograms of the quasi-stationary
`discharge.”)
`
`Lantsman at 1:22-24 (“A typical DC power supply 10
`includes a relatively sophisticated control system,
`designed to permit operation in constant power,
`constant voltage, or constant current modes.”) (emphasis
`added)
`
`5. The apparatus of claim 1
`
`The combination of Mozgrin and Lantsman discloses the
`
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`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`wherein the power supply
`generates a constant voltage.
`
`Mozgrin in view of Lantsman
`
`power supply generates a constant voltage.
`
`See evidence cited in claim 1
`
`Mozgrin at Fig. 3
`
`6. The apparatus of claim 1
`wherein the ionization source is
`chosen from the group comprising
`an electrode coupled to a DC
`power supply, an electrode
`coupled to an AC power supply, a
`UV source, an X-ray source, an
`electron beam source, an ion beam
`source, an inductively coupled
`plasma source, a capacitively
`coupled plasma source, and a
`microwave plasma source.
`
`7. The apparatus of claim 1 further
`comprising a magnet that is
`positioned to generate a magnetic
`field proximate to the weakly-
`ionized plasma, the magnetic field
`trapping electrons in the weakly-
`ionized plasma.
`
`Lantsman at 1:22-24 (“A typical DC power supply 10
`includes a relatively sophisticated control system,
`designed to permit operation in constant power,
`constant voltage, or constant current modes.”) (emphasis
`added)
`
`The combination of Mozgrin and Lantsman discloses the
`ionization source is chosen from the group comprising an
`electrode coupled to a DC power supply, an electrode
`coupled to an AC power supply, a UV source, an X-ray
`source, an electron beam source, an ion beam source, an
`inductively coupled plasma source, a capacitively
`coupled plasma source, and a microwave plasma source.
`
`See evidence cited in claim 1
`
`Mozgrin at 401, left col, ¶ 5 (“…The pre-ionization
`system provided direct current up to 0.3A and voltage up
`to 3 kV.”) (emphasis added)
`
`Mozgrin at Figs. 1 and 2
`
`The combination of Mozgrin and Lantsman discloses a
`magnet that is positioned to generate a magnetic field
`proximate to the weakly-ionized plasma, the magnetic
`field trapping electrons in the weakly-ionized plasma.
`
`See evidence cited in claim 1
`
`‘142 Patent at 1:41-43 [in the Background of the
`Invention] (“Magnetron sputtering systems use magnetic
`fields that are shaped to trap and concentrate secondary
`electrons…”)
`
`Mozgrin at Fig. 1
`
`Mozgrin at 401, left col, ¶ 1 (“The electrodes were
`immersed in a magnetic field of annular permanent
`
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`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`magnets.”)
`
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge
`had an annular shape and was adjacent to the cathode.”)
`
`Mozgrin at 401, right col, ¶2 (“We found out that only
`the regimes with magnetic field strength not lower than
`400 G provided the initial plasma density in the 109-1011
`cm-3 range.”)
`
`Mozgrin at 407, left col, ¶ 3 (“The action of the magnetic
`field serves only to limit the electron thermal
`conductivity and to provide collisions sufficient for
`efficient energy transfer from electrons to heavy
`particles.”)
`
`The combination of Mozgrin and Lantsman discloses the
`magnet comprises an electro-magnet.
`
`See evidence cited in claim 7
`
`Mozgrin at Fig. 1
`
`Mozgrin at 401, right col, Fig. 1 caption, (“Fig. 1.
`Discharge device configurations: (a) planar magnetron;
`(b) shaped-electrode configuration…”)
`
`Mozgrin at 401, left col, ¶ 2 (“The system with shaped
`electrodes involved two axisymmetrical electrodes 120
`mm in diameter separated by about 10 mm, and
`immersed in a cusp-shaped magnetic field produced by
`oppositely directed multilayer coils. The values of Bmax
`were controlled by coil current variation to range from 0
`to 1000 G.”) (emphasis added)
`
`The combination of Mozgrin and Lantsman discloses the
`magnet is movable.
`
`See evidence cited in claim 7
`
`Mozgrin at 401, left col, ¶ 1 (“[t]o control the magnetic
`field strength at the cathode surface, we displaced the
`magnetic system along the axis z (Fig. 1)…” )
`
`8. The apparatus of claim 7
`wherein the magnet comprises an
`electro-magnet.
`
`9. The apparatus of claim 7
`wherein the magnet is movable.
`
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`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`[10pre.] A method for generating a
`strongly-ionized plasma in a
`chamber, the method comprising:
`
`Mozgrin in view of Lantsman
`
`The combination of Mozgrin and Lantsman discloses a
`method for generating a strongly-ionized plasma in a
`chamber.
`
`See evidence cited in claim 1 preamble.
`
`[10a.] ionizing a feed gas to form a
`weakly-ionized plasma that
`reduces the probability of
`developing an electrical
`breakdown condition in the
`chamber;
`
`The combination of Mozgrin and Lantsman discloses
`ionizing a feed gas to form a weakly-ionized plasma that
`reduces the probability of developing an electrical
`breakdown condition in the chamber.
`
`See evidence cited in claim 1(a)
`
`[10b.] supplying power to the
`weakly-ionized plasma by
`applying an electrical pulse across
`the weakly-ionized plasma, the
`electrical pulse having a
`magnitude and a rise-time that is
`sufficient to increase the density of
`the weakly-ionized plasma to
`generate a strongly-ionized
`plasma; and
`
`The combination of Mozgrin and Lantsman discloses
`supplying power to the weakly-ionized plasma by
`applying an electrical pulse across the weakly-ionized
`plasma, the electrical pulse having a magnitude and a
`rise-time that is sufficient to increase the density of the
`weakly-ionized plasma to generate a strongly-ionized
`plasma.
`
`See evidence cited in claim 1(b)
`
`[10c.] diffusing the strongly-
`ionized plasma with additional
`feed gas thereby allowing the
`strongly-ionized plasma to absorb
`additional energy from the power
`supply.
`
`The combination of Mozgrin and Lantsman discloses
`diffusing the strongly-ionized plasma with additional
`feed gas thereby allowing the strongly-ionized plasma to
`absorb additional energy from the power supply.
`
`See evidence cited in claim 1(c)
`
`12. The method of claim 10 further
`comprising exchanging the
`weakly-ionized plasma with
`additional feed gas.
`
`The combination of Mozgrin and Lantsman discloses
`exchanging the weakly-ionized plasma with additional
`feed gas.
`
`See evidence cited in claim 10
`
`14. The method of claim 10 further
`comprising selecting at least one
`of a pulse amplitude and a pulse
`width of the electrical pulse in
`order to increase an ionization rate
`of the strongly-ionized plasma.
`
`The combination of Mozgrin and Lantsman discloses
`selecting at least one of a pulse amplitude and a pulse
`width of the electrical pulse in order to increase an
`ionization rate of the strongly-ionized plasma.
`
`See evidence cited in claim 10
`
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`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`15. The method of claim 10 further
`comprising selecting at least one
`of a pulse amplitude and a pulse
`width of the electrical pulse in
`order to cause the strongly-ionized
`plasma to be substantially uniform.
`
`The combination of Mozgrin and Lantsman discloses
`selecting at least one of a pulse amplitude and a pulse
`width of the electrical pulse in order to cause the
`strongly-ionized plasma to be substantially uniform.
`
`See evidence cited in claim 10
`
`17. The method of claim 10
`wherein the peak plasma density
`of the weakly-ionized plasma is
`less than about 1012 cm-3.
`
`18. The method of claim 10
`wherein the peak plasma density
`of the strongly-ionized plasma is
`greater than about 1012 cm-3.
`
`Mozgrin, at 403, left col, last ¶ (“…being transferred to
`the high-current regime, the discharge expands over a
`considerably larger area of the cathode surface than it
`occupied in the stationary pre-ionization regime.”)
`
`The combination of Mozgrin and Lantsman discloses the
`peak plasma density of the weakly-ionized plasma is less
`than about 1012 cm-3.
`
`See evidence cited in claim 10
`
`Mozgrin at 401, right col. ¶ 2 (“For pre-ionization, … the
`initial plasma density [is] in the 109 – 1011 cm-3
`range….”)
`
`The combination of Mozgrin and Lantsman discloses the
`peak plasma density of the strongly-ionized plasma is
`greater than about 1012 cm-3.
`
`See evidence cited in claim 10
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in
`sputtering or layer deposition technologies provides an
`enhancement in the flux of deposited materials and
`plasma density (exceeding 2 x 1013 cm-3)”)
`
`Mozgrin at 409, left col, last ¶ (“The high-current diffuse
`discharge (regime 3) is useful for producing large-
`volume uniform dense plasmas ni  1.5 x 1015 cm-3”)
`
`19. The method of claim 10
`wherein the ionizing the feed gas
`comprises exposing the feed gas to
`one of a static electric field, an
`pulsed electric field, UV radiation,
`X-ray radiation, electron beam
`
`The combination of Mozgrin and Lantsman discloses the
`ionizing the feed gas comprises exposing the feed gas to
`one of a static electric field, an pulsed electric field, UV
`radiation, X-ray radiation, electron beam radiation, and
`an ion beam.
`
`
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`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`radiation, and an ion beam.
`
`See evidence cited in claim 10
`
`Mozgrin at Figs. 1, 3
`
`Mozgrin, at 401, Fig. 1 caption, (“Fig. 1. Discharge
`device configurations: (a) planar magnetron;”)
`
`Mozgrin, at 403-404, right col, last paragraph of 403, left
`col, first paragraph of 404 (“The current pulse …
`repetition frequency was 10 Hz...”)
`
`20. The method of claim 10 further
`comprising generating a magnetic
`field proximate to the weakly-
`ionized plasma, the magnetic field
`trapping electrons in the weakly-
`ionized plasma.
`
`The combination of Mozgrin and Lantsman discloses
`generating a magnetic field proximate to the weakly-
`ionized plasma, the magnetic field trapping electrons in
`the weakly-ionized plasma.
`
`See evidence cited in claim 7
`
`[40pre.] An apparatus for
`generating a strongly-ionized
`plasma in a chamber, the apparatus
`comprising:
`
`See evidence cited in claim 10
`
`The combination of Mozgrin and Lantsman discloses an
`apparatus for generating a strongly-ionized plasma in a
`chamber.
`
`‘142 Patent at claim 18 (“wherein the peak plasma
`density of the strongly-ionized plasma is greater than
`about 1012 cm˗3”)
`
`Mozgrin at Fig 1
`
`Mozgrin at 400, right col, ¶ 4 (“To study the high-current
`forms of the discharge, we used two types of devices: a
`planar magnetron and a ystem with specifically shaped
`hollow electrodes.”)
`
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the
`initial plasma density in the 109 – 1011 cm-3 range.”)
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in
`sputtering … plasma density (exceeding 2x1013 cm-3).”)
`
`
`Mozgrin at 409, left col, ¶5 (“The high-current diffuse
`
`ActiveUS 121997252v.1
`
`- 12 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`[40a.] means for ionizing a feed
`gas to form a weakly-ionized
`plasma that reduces the probability
`of developing an electrical
`breakdown condition in the
`chamber;
`
`discharge (regime 3) is useful for producing large-
`volume uniform dense plasmas ni  1.5x1015cm-3…”).
`
`The combination of Mozgrin and Lantsman discloses
`means for ionizing a feed gas to form a weakly-ionized
`plasma that reduces the probability of developing an
`electrical breakdown condition in the chamber.
`
`Claimed function
`
`Claim 40 recites “means for ionizing a feed gas to form a
`weakly-ionized plasma that reduces the probability of
`developing an electrical breakdown condition in the
`chamber.”
`
`The combination of Mozgrin and Lantsman teach the
`function corresponding to the “means for ionizing…”
`limitation.
`
`‘142 Patent at 5:18-19 (“The weakly-ionized plasma is
`also referred to as a pre-ionized plasma.”)
`
`‘142 Patent at claim 17 (“wherein the peak plasma
`density of the weakly-ionized plasma is less than about
`1012 cm˗3”)
`
`Mozgrin at Figs. 1, 2, 6, 7
`
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical
`voltage and current oscillograms.… Part I in the voltage
`oscillogram represents the voltage of the stationary
`discharge (pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we
`used a stationary magnetron discharge; … provided the
`initial plasma density in the 109 – 1011 cm˗3 range.”)
`
`Mozgrin at 400, right col, ¶ 3 (“We investigated the
`discharge regimes in various gas mixtures at 10-3 – 10
`torr…”)
`
`402, ¶ spanning left and right cols (“We studied the high-
`current discharge in wide ranges of discharge
`current…and operating pressure…using various gases
`
`ActiveUS 121997252v.1
`
`- 13 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`(Ar, N2, SF6, and H2) or their mixtures of various
`composition…”)
`
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge
`had an annular shape and was adjacent to the cathode.”)
`
`Mozgrin at 406, right col, ¶3 (“pre-ionization was not
`necessary; however, in this case, the probability of
`discharge transferring to arc mode increased.”)
`
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on
`magnetron systems of various geometry showed that
`discharge regimes which do not transit to arcs can be
`obtained even at high currents.”)
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the” means for ionizing…” limtation:
`
`a power supply, generating the voltage, current and
`power values shown in Fig. 4 (e.g., between t1 – t2 and t6
`– t7), electrically coupled to cathode (e.g., 204), anode
`(e.g., 216) and/or an electrode (e.g., 452, 452’), wherein
`the cathode, anode and/or electrode are arranged relative
`to a sputtering target as shown in Figs. 2A-2D and 6A-
`6D, and as described in the text of the ‘142 Patent at 5:5-
`36, 16:24-40, 17:40-18:12, 18:13-34, and 18:35-46
`
`The combination of Mozgrin and Lantsman discloses the
`structure corresponding to the “means for ionizing…”
`limitation. For example:
`
`Mozgrin at Figs. 1, 2, 3.
`
`
`Mozgrin at 401, right col, ¶2 (For pre-ionization, we used
`a stationary magnetron discharge … provided the initial
`plasma density in the 109 – 1011 cm-3 range.)
`
`ActiveUS 121997252v.1
`
`- 14 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`Mozgrin at 406, right col, ¶3 (“pre-ionization was not
`necessary; however, in this case, the probability of
`discharge transferring to arc mode increased.”)
`
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge
`had an annular shape and was adjacent to the cathode.”)
`(emphasis added)
`
`Any differences between Mozgrin’s and the ‘142 patent’s
`mechanical arrangement of the anode and cathode is
`nothing more than the mechanical rearrangement of well-
`known components. Rearranging Mozgrin’s components
`to match that of the ‘142 patent would be obvious to one
`of ordinary skill.
`
`Background:
`
`Manos at 231 (“arcs…are a problem…” )
`
`The combination of Mozgrin and Lantsman discloses
`means for supplying power to the weakly-ionized plasma
`by applying an electrical pulse across the weakly-ionized
`plasma, the electrical pulse having a magnitude and a
`rise-time that is sufficient to increase the density of the
`weakly-ionized plasma to generate a strongly-ionized
`plasma.
`
`Claimed function
`
`Claim 40 recites “means for supplying power to the
`weakly-ionized plasma by applying an electrical pulse
`across the weakly-ionized plasma, the electrical pulse
`having a magnitude and a rise-time that is sufficient to
`increase the density of the weakly-ionized plasma to
`generate a strongly-ionized plasma.”
`
`The combination of Mozgrin and Lantsman teach the
`function corresponding to the “means for supplying
`power…”
`
`‘142 Patent at 1:41-43 (“Magnetron sputtering systems
`use magnetic fields that are shaped to trap and to
`concentrate secondary electrons, which are produced by
`
`[40b.] means for supplying power
`to the weakly-ionized plasma by
`applying an electrical pulse across
`the weakly-ionized plasma, the
`electrical pulse having a
`magnitude and a rise-time that is
`sufficient to increase the density of
`the weakly-ionized plasma to
`generate a strongly-ionized
`plasma; and
`
`ActiveUS 121997252v.1
`
`- 15 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`ion bombardment of the target surface.”)
`
`‘142 Patent at 1:37-40 (“The plasma is replenished by
`electron-ion pairs formed by the collision of neutral
`molecules with secondary electrons generated at the
`target surface.”)
`
`Mozgrin at Figs. 1, 2, 3
`
`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage
`oscillogram represents the voltage of the stationary
`discharge (pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was
`made providing square voltage and current pulses with
`[rise] times (leading edge) of 5 – 60 µs…”)
`
`See evidence cited in [40pre] of claim 40.
`
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the “means for supplying power…”:
`
`pulsed power supply (e.g., 202), generating the voltage,
`current and power values shown in Fig. 4 (e.g., between
`t2 – t4), electrically coupled to a cathode (e.g., 204) and
`anode (e.g., 216), wherein the cathode and anode are
`arranged relative to a sputtering target as shown in Figs.
`2A-2D and 6A-6D, and as described in the text of the
`‘142 Patent at 6:57-7:31, 8:16-25, 12:1-16, 13:25-55,
`13:63-14:5, 17:12-33, 19:3-14, and 19:22-32
`
`The combination of Mozgrin and Lantsman teach the
`structure corresponding to the “means for supplying
`power…” limitation. For example:
`
`Mozgrin at Figs. 1, 2, 3
`
`Any difference between Mozgrin’s and the ‘142 Patent’s
`mechanical arrangement of the anode and cathode is
`nothing more than the mechanical rearrangement of well-
`known components. Rearranging Mozgrin’s components
`
`ActiveUS 121997252v.1
`
`- 16 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`[40c.] means for diffusing the
`strongly-ionized plasma with
`additional feed gas to allow
`additional power to be absorbed by
`the strongly-ionized plasma.
`
`to match that of the ‘142 Patent would be obvious to one
`of ordinary skill.
`
`The combination of Mozgrin and Lantsman discloses
`means for diffusing the strongly-ionized plasma with
`additional feed gas to allow additional power to be
`absorbed by the strongly-ionized plasma.
`
`Claimed function
`
`Claim 40 recites “means for diffusing the strongly-
`ionized plasma with additional feed gas to allow
`additional power to be absorbed by the strongly-ionized
`plasma.”
`
`The combination of Mozgrin and Lantsman teach the
`function corresponding to “means for diffusing…”
`
`It would have been obvious to one of ordinary skill to
`continue to add the feed gas in Mozgrin during
`production of the strongly-ionized plasma (i.e., during
`either of regions 2 or 3). Such addition of the feed gas
`would have both diffused the strongly-ionized plasma
`and allowed additional power from Mozgrin’s repeating
`voltage pulses to be absorbed by the strongly-ionized
`plasma.
`
`Mozgrin at ¶ spanning pp. 403-404 (“The … repetition
`frequency was 10 Hz….”).
`
`Lantsman at Fig. 6
`
`ActiveUS 121997252v.1
`
`
`
`- 17 -
`
`

`

`
`
`EXHIBIT D.03
`U.S. Patent No. 6,853,142
`
`‘142 Claims 1, 3-9, 10, 12, 14, 15,
`17-20, 40 and 42
`
`Mozgrin in view of Lantsman
`
`Lantsman at 3:9-13 (“[A]t the beginning of processing,
`this switch is closed and gas is introduced into the
`chamber. When the plasma process is completed, the gas
`flow is stopped….”)
`
`Lantsman at 4:36-38 (“To end processing, primary
`supply 10 is disabled, reducing the plasma current and
`deposition on the wafer. Then, gas flow is
`terminated….”)
`
`Lantsman at 5:39-4

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