EXHIBIT C.05
`U.S. Patent No. 7,811,421
`
`References cited herein:
`(cid:120) U.S. Pat. No. 7,811,421 (“’421 Patent”)
`
`(cid:120) D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`(cid:120) U.S. Pat. No. 6,190,512 (“Lantsman”)
`
`(cid:120) Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
`(cid:120) Milton Ohring, The Material Science of Thin Films, Academic Press, 1992 (“Ohring”)
`
`(cid:120) Donald L. Smith, Thin-Film Deposition: Principles & Practice, McGraw Hill, 1995
`(“Smith”)
`
`
`
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`[1pre]. A sputtering source comprising: Mozgrin discloses a sputtering source.
`
`Mozgrin 403, right col, ¶4 (“Regime 2 was
`characterized by intense cathode sputtering…”)
`
`[1a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode; and
`
`Mozgrin discloses a cathode assembly comprising
`a sputtering target that is positioned adjacent to an
`anode.
`
`‘421 Patent at 3:39-4:2 (“FIG. 1 illustrates a
`cross-sectional view of a known magnetron
`sputtering apparatus 100 having a pulsed power
`source 102. … The magnetron sputtering
`apparatus 100 also includes a cathode assembly
`114 having a target 116. … An anode 130 is
`positioned in the vacuum chamber 104 proximate
`to the cathode assembly 114.”)
`
`Mozgrin at Fig. 1
`
`Mozgrin at 403, right col., ¶4 (“Regime 2 was
`characterized by an intense cathode
`sputtering….”)
`
`Mozgrin at 403, right col, ¶ 4 (“…The pulsed
`deposition rate of the cathode material…”)
`
`
`ActiveUS 122662418v.1
`
`- 1 -
`
`GILLETTE 1019
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`[1b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, an amplitude, a duration and a
`rise time of the voltage pulse being
`chosen to increase a density of ions in the
`strongly-ionized plasma.
`
`Mozgrin discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
`assembly, an amplitude, a duration and a rise time
`of the voltage pulse being chosen to increase a
`density of ions in the strongly-ionized plasma.
`
`‘421 Patent at Fig. 6
`
`‘421 Patent at 8:22-23 (“The weakly-ionized
`plasma is also referred to as a pre-ionized
`plasma.”)
`
`Mozgrin at Figs. 2 and 3
`
`Mozgrin at 401, left col, ¶ 4 (“It was possible to
`form the high-current quasi-stationary regime by
`applying a square voltage pulse to the discharge
`gap which was filled up with either neutral or pre-
`ionized gas.”)
`
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows
`typical voltage and current oscillograms.… Part I
`in the voltage oscillogram represents the voltage
`of the stationary discharge (pre-ionization
`stage).”)
`
`Mozgrin at 401, right col, ¶2 (“[f]or pre-
`ionization, we used a stationary magnetron
`discharge; … provided the initial plasma density
`in the 109 – 1011 cm(cid:1956)3 range.”)
`
`Mozgrin at 409, left col, ¶ 4 (“The
`implementation of the high-current magnetron
`discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm-3).)”
`
`Mozgrin at 400, left col, ¶ 3 (“Some experiments
`on magnetron systems of various geometry
`showed that discharge regimes which do not
`transit to arcs can be obtained even at high
`
`
`ActiveUS 122662418v.1
`
`- 2 -
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`currents.”)
`
`Mozgrin at Fig. 7
`
`Mozgrin explicitly notes that arcs can be avoided.
`See Mozgrin at 400, left col, ¶ 3 (“Some
`experiments on magnetron systems of various
`geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high
`currents.”)
`
`Mozgrin at 400, right col, ¶ 1 (“A further increase
`in the discharge currents caused the discharges to
`transit to the arc regimes…”)
`
`Mozgrin at 404, left col, ¶ 4 (“The parameters of
`the shaped-electrode discharge transit to regime 3,
`as well as the condition of its transit to arc regime
`4, could be well determined for every given set of
`the discharge parameters.”)
`
`Mozgrin at 406, right col, ¶ 3 (“Moreover, pre-
`ionization was not necessary; however, in this
`case, the probability of discharge transferring to
`the arc mode increased.”)
`
`Mozgrin at 404, left col, ¶ 2 (“[t]he density turned
`out to be about 3 x 1012 cm-3 in the regime of Id =
`60A and Ud = 900 V.”)
`
`Mozgrin at 403 left col, ¶ 4 (“[t]ransferring to
`regime 3, the discharge occupied a significantly
`larger cathode surface than in the stationary
`regime.”)
`
`Mozgrin at 404, right col, ¶ 2 (“The density
`ranged from (2 – 2.5) x 1014 cm-3 at 360 - 540A
`current up to (1-1.5) x 1015 cm-3 at 1100-1400 A
`current.”)
`
`Background:
`
`Manos at 231 (“…arcs… are a problem…”)
`
`6. The sputtering source of claim 1 further The combination of Mozgrin and Lantsman
`- 3 -
`
`
`ActiveUS 122662418v.1
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`comprising a gas flow controller that
`controls a flow of the feed gas so that the
`feed gas diffuses the strongly-ionized
`plasma.
`
`
`ActiveUS 122662418v.1
`
`discloses a gas flow controller that controls a flow
`of the feed gas so that the feed gas diffuses the
`strongly-ionized plasma.
`
`See evidence cited in claim 1
`
`Mozgrin at 401, left col, ¶ 4 (“… applying a
`square voltage pulse to the discharge gap which
`was filled up with either neutral or pre-ionized
`gas.”)
`
`Lantsman at 3:9-13 (“… at the beginning of
`processing, this switch is closed and gas is
`introduced into the chamber. When the plasma
`process is completed, the gas flow is stopped…”)
`
`Lantsman at 4:36-38 (“To end processing,
`primary supply 10 is disabled, reducing the
`plasma current and deposition on the wafer.
`Then, gas flow is terminated…”)
`
`Lantsman at Fig. 6
`
`Lantsman at 5:39-42 (“Sometime thereafter, gas
`flow is initiated and the gas flow and pressure
`(trace 48) begin to ramp upwards toward normal
`processing levels.”)
`
`Lantsman at 5:42-45 (“After a delay time (54), a
`normal pressure and flow rate are achieved, and
`primary supply 10 is enabled, causing a ramp
`increase in the power produced by the primary
`supply (trace 52).)
`
`Lantsman at 2:48-51 (“This secondary power
`supply ‘pre-ignites’ the plasma so that when the
`primary power supply is applied, the system
`smoothly transitions to final plasma development
`and deposition.”)
`
`One of ordinary skill would have been motivated
`to use Lantsman’s gas flow controllers in
`Mozgrin’s sputtering systems so that the feed gas
`diffuses the strongly-ionized plasma. First, both
`Mozgrin and Lantsman are directed to sputtering
`- 4 -
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`using plasma. See Mozgrin at 409, left col, ¶ 4
`(“The implementation of the high-current
`magnetron discharge (regime 2) in sputtering or
`layer-deposition technologies provides an
`enhancement in the flux of deposited materials
`and plasma density…”); see also Lantsman at 1:6-
`8 (“This invention relates to reduction of device
`damage in plasma processes, including DC
`(magnetron or non-magnetron) sputtering, and RF
`sputtering.”). Accordingly, one of ordinary skill
`in the art would have been motivated to
`continually feed in the feed gas to diffuse the
`plasma and allow continued deposition to occur.
`See Mozgrin at 403, right col. ¶ 4.
`
`Also, both references relate to sputtering systems
`that use two power supplies, one for pre-
`ionization and one for deposition. See Mozgrin at
`Fig. 2; see also Lantsman at 4:45-47 (“…the
`secondary [power] supply 32 is used to pre-ignite
`the plasma, whereas the primary [power] supply
`10 is used to generate deposition.”)
`
`Moreover, both Mozgrin and Lantsman are
`concerned with generating plasma while avoiding
`arcing. See Mozgrin at 400, right col, ¶ 3 (“The
`main purpose of this work was to study
`experimentally a high-power noncontracted quasi-
`stationary discharge in crossed fields of various
`geometry and to determine their parameter
`ranges.”); see also Lantsman 1:51-59
`(“Furthermore, arcing which can be produced by
`overvoltages can cause local overheating of the
`target, leading to evaporation or flaking of target
`material into the processing chamber and causing
`substrate particle contamination and device
`damage… Thus, it is advantageous to avoid
`voltage spikes during processing whenever
`possible.”)
`
`Summarizing, Mozgrin and Lantsman relate to the
`same application. Further, incorporating
`Lantsman’s gas flow controllers into Mozgrin
`would have been a combination of old elements
`- 5 -
`
`
`ActiveUS 122662418v.1
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`according to known methods to yield predictable
`results.
`
`Background:
`
`Ohring at Fig. 3-13
`
`Smith at Fig. 3-1
`
`Smith at 35, ¶2 (, “Process gasses and vapors are
`metered into the chamber through mass flow-
`controlled supply lines…”)
`
`[17pre]. A sputtering source comprising: The combination of Mozgrin and Lantsman
`discloses a sputtering source.
`
`[17a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode;
`
`[17b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, an amplitude and a rise time of
`the voltage pulse being chosen to increase
`a density of ions in the strongly-ionized
`plasma; and
`
`See evidence cited in claim 1 preamble
`
`The combination of Mozgrin and Lantsman
`discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`See evidence cited in claim [1a]
`
`The combination of Mozgrin and Lantsman
`discloses a power supply that generates a voltage
`pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
`assembly, an amplitude and a rise time of the
`voltage pulse being chosen to increase a density
`of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`[17c] c) a substrate support that is
`positioned adjacent to the sputtering
`target; and
`
`The combination of Mozgrin and Lantsman
`discloses a substrate support that is positioned
`adjacent to the sputtering target.
`
`Lantsman at Fig. 1
`
`Lantsman at 1:12-14 (“The semiconductor
`- 6 -
`
`
`ActiveUS 122662418v.1
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`substrate 16 (also known as the wafer) rests on a
`back plane 18….”)
`
`One of ordinary skill would have been motivated
`to use Lantsman’s substrate support in Mozgrin’s
`sputtering systems. First, both Mozgrin and
`Lantsman are directed to sputtering using plasma.
`See Mozgrin at 409, left col, ¶ 4 (“The
`implementation of the high-current magnetron
`discharge (regime 2) in sputtering or layer-
`deposition technologies provides an enhancement
`in the flux of deposited materials and plasma
`density…”); see also Lantsman at 1:6-8 (“This
`invention relates to reduction of device damage in
`plasma processes, including DC (magnetron or
`non-magnetron) sputtering, and RF sputtering.”).
`Accordingly, rather than using a “probecollector”
`described in Mozgrin, one of ordinary skill in the
`art would have been motivated to use a substrate
`support that can support a substrate to allow
`deposition onto a substrate, such as wafer 16. See
`Mozgrin at 403, right col. ¶ 4.
`
`Also, both references relate to sputtering systems
`that use two power supplies, one for pre-
`ionization and one for deposition. See Mozgrin at
`Fig. 2; see also Lantsman at 4:45-47 (“…the
`secondary [power] supply 32 is used to pre-ignite
`the plasma, whereas the primary [power] supply
`10 is used to generate deposition.”)
`
`Moreover, both Mozgrin and Lantsman are
`concerned with generating plasma while avoiding
`arcing. See Mozgrin at 400, right col, ¶ 3 (“The
`main purpose of this work was to study
`experimentally a high-power noncontracted quasi-
`stationary discharge in crossed fields of various
`geometry and to determine their parameter
`ranges.”); see also Lantsman 1:51-59
`(“Furthermore, arcing which can be produced by
`overvoltages can cause local overheating of the
`target, leading to evaporation or flaking of target
`material into the processing chamber and causing
`substrate particle contamination and device
`- 7 -
`
`
`ActiveUS 122662418v.1
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`[17d] d) a bias voltage source having an
`output that is electrically plasma. coupled
`to the substrate support.
`
`damage… Thus, it is advantageous to avoid
`voltage spikes during processing whenever
`possible.”)
`
`Summarizing, Mozgrin and Lantsman relate to the
`same application. Further, incorporating
`Lantsman’s substrate support into Mozgrin would
`have been a combination of old elements
`according to known methods to yield predictable
`results.
`
`The combination of Mozgrin and Lantsman
`discloses a bias voltage source having an output
`that is electrically plasma. coupled to the substrate
`support.
`
`Lantsman at Fig. 5
`
`Lantsman at 1:14-17 (“The back plane may be
`driven by radio frequency (RF) AC voltage
`signals, produced by an RF power supply 20,
`which drives the back plane through a
`compensating network 22.”)
`
`22. The sputtering source of claim 17
`wherein the power supply generates a
`constant power.
`
`The combination of Mozgrin and Lantsman
`discloses the power supply generates a constant
`power.
`
`See evidence cited in claim 17
`
`‘421 Patent at Fig. 6
`
`‘421 Patent, 15:37-41 (FIG. 6 illustrates graphical
`representations 320, 322, and 324 of the absolute
`value of applied voltage, current, and power,
`respectively, as a function of time for periodic
`pulses applied to the plasma in the sputtering
`apparatus 200 of FIG. 4”)
`
`‘421 Patent, 15:56-58 (“Between time t1 and time
`t2, the voltage 326, the current 328, and the power
`330 remain constant…”)
`
`Mozgrin at Figs. 2 and 3
`
`- 8 -
`
`
`ActiveUS 122662418v.1
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`23. The sputtering source of claim 17
`wherein the power supply generates a
`constant voltage.
`
`The combination of Mozgrin and Lantsman
`discloses the power supply generates a constant
`voltage.
`
`27. The sputtering source of claim 17
`wherein the amplitude of the voltage
`pulse is in the range of approximately 1V
`to 25kV.
`
`28. The sputtering source of claim 17
`wherein a pulse width of the voltage pulse
`is in the range of approximately 0.1 μsec
`to 100 sec.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 22
`
`The combination of Mozgrin and Lantsman
`discloses the amplitude of the voltage pulse is in
`the range of approximately 1V to 25kV.
`
`See evidence cited in claim 17
`
`Mozgrin at Fig. 4
`
`The combination of Mozgrin and Lantsman
`discloses a pulse width of the voltage pulse is in
`the range of approximately 0.1 μsec to 100 sec.
`
`See evidence cited in claim 17
`
`Mozgrin at ¶ spanning 403-404 (“The … pulse
`duration was 25 ms, and the repetition frequency
`was 10 Hz….”)
`
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply
`unit was made providing square voltage and
`current pulses … durations as much as 1.5ms.”)
`
`29. The sputtering source of claim 17
`wherein a distance from the sputtering
`target to the substrate support is in the
`range of approximately 1 cm to 100 cm.
`
`The combination of Mozgrin and Lantsman
`discloses a distance from the sputtering target to
`the substrate support is in the range of
`approximately 1 cm to 100 cm.
`
`See evidence cited in claim 17
`
`Mozgrin, at 403, right col, ¶ 4 (To study the
`sputtering, we used a probecollector placed 120
`mm from the cathode.”)
`
`30. The sputtering source of claim 17
`wherein the bias voltage source comprises
`an RF power source.
`
`The combination of Mozgrin and Lantsman
`discloses the bias voltage source comprises an RF
`power source.
`
`
`ActiveUS 122662418v.1
`
`- 9 -
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`31. The sputtering source of claim 17
`further comprising a gas flow controller
`that controls a flow of the feed gas so that
`the feed gas diffuses the strongly-ionized
`plasma.
`
`33. The sputtering source of claim 17
`further comprising a magnet that is
`positioned to generate a magnetic field
`proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping
`electrons in the weakly-ionized plasma
`proximate to the sputtering target.
`
`See evidence cited in claim 17
`
`Lantsman at Fig. 5
`
`Lantsman at 1:14-17 (“The back plane may be
`driven by radio frequency (RF) AC voltage
`signals, produced by an RF power supply 20,
`which drives the back plane through a
`compensating network 22.”)
`
`The combination of Mozgrin and Lantsman
`discloses a gas flow controller that controls a flow
`of the feed gas so that the feed gas diffuses the
`strongly-ionized plasma.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 6
`
`The combination of Mozgrin and Lantsman
`discloses a magnet that is positioned to generate a
`magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping
`electrons in the weakly-ionized plasma proximate
`to the sputtering target.
`
`See evidence cited in claim 17
`
`‘421 Patent at 3:39-63 (FIG. 1 illustrates a cross-
`sectional view of a known magnetron sputtering
`apparatus 100 having a pulsed power source
`102….The magnet 126 shown in FIG. 1…)
`
`‘421 Patent at 4:31-34 [describing the prior art
`Fig. 1] (“The electrons, which cause ionization,
`are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic
`confinement is strongest in a confinement region
`142….”)
`
`Mozgrin at Fig. 1
`
`Mozgrin at 401, left col, ¶ 1 (“The electrodes
`were immersed in a magnetic field of annular
`
`
`ActiveUS 122662418v.1
`
`- 10 -
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`permanent magnets.”)
`
`Mozgrin at 401, right col, ¶2 (“We found out that
`only the regimes with magnetic field strength not
`lower than 400 G provided the initial plasma
`density in the 109-1011 cm-3 range.”) (Ex. 1003)
`
`Mozgrin at 407, left col, ¶ 3 (“The action of the
`magnetic field serves only to limit the electron
`thermal conductivity and to provide collisions
`sufficient for efficient energy transfer from
`electrons to heavy particles.”)
`
`[34pre]. A method for high deposition
`rate sputtering, the method comprising:
`
`Mozgrin discloses a method for high deposition
`rate sputtering.
`
`[34a] a) generating a voltage pulse
`between the anode and the cathode
`assembly comprising a sputtering target,
`the voltage pulse creating a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly; and
`
`Mozgrin at 403, right col, ¶4 (“Region 2 was
`characterized by intense cathode sputtering….”)
`
`Mozgrin discloses generating a voltage pulse
`between the anode and the cathode assembly
`comprising a sputtering target, the voltage pulse
`creating a weakly-ionized plasma and then a
`strongly-ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing between
`the anode and the cathode assembly.
`
`See evidence cited in claim [1a]
`
`See evidence cited in claim [1b]
`
`[34b] b) adjusting an amplitude and a rise
`time of the voltage pulse to increase a
`density of ions in the strongly-ionized
`plasma.
`
`Mozgrin discloses adjusting an amplitude and a
`rise time of the voltage pulse to increase a density
`of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`42. The method of claim 34 further
`comprising applying a bias voltage to a
`substrate support that is positioned
`adjacent to the sputtering target.
`
`The combination of Mozgrin and Lantsman
`discloses applying a bias voltage to a substrate
`support that is positioned adjacent to the
`sputtering target.
`
`See evidence cited in claim 34
`
`
`ActiveUS 122662418v.1
`
`- 11 -
`
`

`

`EXHIBIT C.05
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 17, 22, 23, 27-31, 33, 42,
`44, and 45
`
`Mozgrin in view of Lantsman
`
`See evidence cited in claim 17[c]
`
`See evidence cited in claim 17[d]
`
`The combination of Mozgrin and Lantsman
`discloses diffusing the weakly-ionized plasma
`with a volume of the feed gas while ionizing the
`volume of the feed gas to create additional
`weakly-ionized plasma.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 6
`
`The combination of Mozgrin and Lantsman
`discloses exchanging a volume of feed gas to
`diffuse the strongly-ionized plasma while
`applying the voltage pulse to the cathode
`assembly to generate additional strongly-ionized
`plasma from the volume of the feed gas.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 6
`
`44. The method of claim 34 further
`comprising diffusing the weakly-ionized
`plasma with a volume of the feed gas
`while ionizing the volume of the feed gas
`to create additional weakly-ionized
`plasma.
`
`45. The method of claim 34 further
`comprising exchanging a volume of feed
`gas to diffuse the strongly-ionized plasma
`while applying the voltage pulse to the
`cathode assembly to generate additional
`strongly-ionized plasma from the volume
`of the feed gas.
`
`
`
`
`ActiveUS 122662418v.1
`
`- 12 -
`
`