EXHIBIT C.13
`U.S. Patent No. 7,811,421
`
`References cited herein:
`(cid:120) U.S. Pat. No. 7,811,421 (“’421 Patent”)
`
`(cid:120) U.S. Pat. No. 6,413,382 (“Wang”)
`
`(cid:120) U.S. Pat. No. 6,190,512 (“Lantsman”)
`
`‘421 Claims 6, 31, 44, and 45
`
`Wang in view of Lantsman
`
`[1pre]. A sputtering source
`comprising:
`
`Wang discloses a sputtering source.
`
`Wang at Title (“pulsed sputtering with a small
`rotating magnetron”)
`
`[1a] a) a cathode assembly comprising
`a sputtering target that is positioned
`adjacent to an anode; and
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`‘421 Patent at 3:39-4:2 (“FIG. 1 illustrates a cross-
`sectional view of a known magnetron sputtering
`apparatus 100 having a pulsed power source 102. …
`The magnetron sputtering apparatus 100 also
`includes a cathode assembly 114 having a target 116.
`… An anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly
`114.”)
`
`Wang at 3:66-4:1 (“A grounded shield 24 … acts as a
`grounded anode for the cathode of the negatively
`biased target 14.”)
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma and
`then a strongly-ionized plasma from the weakly-
`ionized plasma without an occurrence of arcing
`between the anode and the cathode assembly, an
`amplitude, a duration and a rise time of the voltage
`pulse being chosen to increase a density of ions in the
`strongly-ionized plasma
`
`Wang at Figs. 1, 6 and 7
`
`Wang at 7:58-61 (“… DC power supply 100 is
`connected to the target 14 … and supplies an
`essentially constant negative voltage to the target 14
`corresponding to the background power PB.”)
`
`- 1 -
`
`[1b] b) a power supply that generates a
`voltage pulse between the anode and
`the cathode assembly that creates a
`weakly-ionized plasma and then a
`strongly-ionized plasma from the
`weakly-ionized plasma without an
`occurrence of arcing between the
`anode and the cathode assembly, an
`amplitude, a duration and a rise time
`of the voltage pulse being chosen to
`increase a density of ions in the
`strongly-ionized plasma.
`
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`GILLETTE 1122
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`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`Wang at 7:61-62 (“The pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`Wang at 3:66-4:1 (“A grounded shield 24 … acts as a
`grounded anode for the cathode of the negatively
`biased target 14.”)
`
`Wang at 7:17-31 (“The background power level PB is
`chosen to exceed the minimum power necessary to
`support a plasma... [T]he application of the high
`peak power PP quickly causes the already existing
`plasma to spread and increases the density of the
`plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at
`least 10 times the background power PB … and most
`preferably 1000 times to achieve the greatest effect of
`the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Wang at 7:31-39 (“In one mode of operating the
`reactor, during the background period, little or no
`target sputtering is expected. The SIP reactor is
`advantageous for a low-power, low-pressure
`background period since the small rotating SIP
`magnetron can maintain a plasma at lower power and
`lower pressure than can a larger stationary
`magnetron. However, it is possible to combine highly
`ionized sputtering during the pulses with significant
`neutral sputtering during the background period.”)
`
`Wang at 7:3-6 (“Plasma ignition, particularly in
`plasma sputter reactors, has a tendency to generate
`particles during the initial arcing, which may
`dislodge large particles from the target or chamber.”)
`
`Wang at 7:13-28 (“Accordingly, it is advantageous to
`use a target power waveform illustrated in FIG. 6…
`As a result, once the plasma has been ignited at the
`beginning of sputtering prior to the illustrated
`waveform…”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs
`
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`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`be performed only once and at much lower power
`levels so that particulates produced by arcing are
`much reduced.”)
`
`Wang at 7:28-30 (“…the application of the high peak
`power PP instead quickly causes the already existing
`plasma to spread and increases the density of the
`plasma”)
`
`Wang at 5:23-26 (“The illustrated pulse form is
`idealized. Its exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise
`times and fall times are expected.”)
`
`The combination of Wang and Lantsman discloses a
`gas flow controller that controls a flow of the feed
`gas so that the feed gas diffuses the strongly-ionized
`plasma.
`
`See evidence cited at claim 1
`
`Wang at Fig. 1
`
`Wang at 4:51-55 (“A computerized controller 58
`controls the … mass flow controller 34, as
`illustrated….”)
`
`Wang at 4:11-12 (“A vacuum system 38 pumps the
`chamber….”)
`
`Lantsman at 3:9-13 (“… at the beginning of
`processing, this switch is closed and gas is introduced
`into the chamber. When the plasma process is
`completed, the gas flow is stopped…”)
`
`Lantsman at 4:36-38 (“To end processing, primary
`supply 10 is disabled, reducing the plasma current
`and deposition on the wafer. Then, gas flow is
`terminated…”)
`
`Lantsman at Fig. 6
`
`Lantsman at 5:39-42 (“Sometime thereafter, gas flow
`is initiated and the gas flow and pressure (trace 48)
`begin to ramp upwards toward normal processing
`
`- 3 -
`
`6. The sputtering source of claim 1
`further comprising a gas flow
`controller that controls a flow of the
`feed gas so that the feed gas diffuses
`the strongly-ionized plasma.
`
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`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`levels.”)
`
`Lantsman at 5:42-45 (“After a delay time (54), a
`normal pressure and flow rate are achieved, and
`primary supply 10 is enabled, causing a ramp
`increase in the power produced by the primary supply
`(trace 52).)
`
`Lantsman at 2:48-51 (“This secondary power supply
`‘pre-ignites’ the plasma so that when the primary
`power supply is applied, the system smoothly
`transitions to final plasma development and
`deposition.”)
`
`One of ordinary skill would have been motivated to
`combine Wang and Lantsman. Both Wang and
`Lantsman are directed to sputtering using plasma.
`See Wang at Title (“Pulsed sputtering with a small
`rotating magnetron”); see also, Wang at 3:20-21
`(“[A] high plasma density is achieved adjacent to the
`magnetron during the pulse.”); see also, Lantsman at
`1:6-8 (“This invention relates to reduction of device
`damage in plasma processes, including DC
`(magnetron or non-magnetron) sputtering, and RF
`sputtering.”). Also, both references relate to
`sputtering systems that use two power supplies, one
`for pre-ionization and one for deposition. See Wang
`at Fig. 7 [showing pulsed supply 80 and constant
`supply 100]; see also Lantsman at 4:45-47 (“…the
`secondary [power] supply 32 is used to pre-ignite the
`plasma, whereas the primary [power] supply 10 is
`used to generate deposition.”).
`
`Moreover, both Wang and Lantsman are concerned
`with generating plasma while avoiding arcing. See
`Wang at 7:3-49 (“Plasma ignition, particularly in
`plasma sputter reactors, has a tendency to generate
`particles during the initial arcing, which may
`dislodge large particles from the target or chamber….
`The initial plasma ignition needs be performed only
`once and at much lower power levels so that
`particulates produced by arcing are much reduced.”);
`see also Lantsman (“Furthermore, arcing which can
`be produced by overvoltages can cause local
`overheating of the target, leading to evaporation or
`- 4 -
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`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`flaking of target material into the processing chamber
`and causing substrate particle contamination and
`device damage…. Thus, it is advantageous to avoid
`voltage spikes during processing whenever
`possible.”)
`
`Summarizing, Wang and Lantsman relate to the same
`application. Further, one of ordinary skill would
`have been motivated to use Lantsman’s continuous
`gas flow in Wang so as to maintain a desired pressure
`in the chamber. Also, use of Lantsman’s continuous
`gas flow in Wang would have been a combination of
`old elements in which each element behaved as
`expected. Finally, such a continuous flow of gas in
`Wang would diffuse the strongly-ionized plasma and
`allow additional power to be absorbed by the plasma.
`
`[17pre]. A sputtering source
`comprising:
`
`Wang discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`[17a] a) a cathode assembly
`comprising a sputtering target that is
`positioned adjacent to an anode;
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`[17b] b) a power supply that generates
`a voltage pulse between the anode and
`the cathode assembly that creates a
`weakly-ionized plasma and then a
`strongly-ionized plasma from the
`weakly-ionized plasma without an
`occurrence of arcing between the
`anode and the cathode assembly, an
`amplitude and a rise time of the
`voltage pulse being chosen to increase
`a density of ions in the strongly-
`ionized plasma; and
`
`[17c] c) a substrate support that is
`positioned adjacent to the sputtering
`target; and
`
`ActiveUS 122672069v.1
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`See evidence cited in claim [1a]
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma and
`then a strongly-ionized plasma from the weakly-
`ionized plasma without an occurrence of arcing
`between the anode and the cathode assembly, an
`amplitude and a rise time of the voltage pulse being
`chosen to increase a density of ions in the strongly-
`ionized plasma.
`
`See evidence cited in claim [1b]
`
`Wang discloses a substrate support that is positioned
`adjacent to the sputtering target.
`
`Wang at 3:63-66 (“A pedestal electrode 18 supports a
`wafer 20 to be sputter coated in planar opposition to
`
`- 5 -
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`

`

`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`the target 14 across a processing region 22.”)
`
`[17d] d) a bias voltage source having
`an output that is electrically plasma.
`coupled to the substrate support.
`
`Wang discloses a bias voltage source having an
`output that is electrically plasma. coupled to the
`substrate support.
`
`Wang at Fig. 1
`
`Wang at 4:32-34 (“[A]n RF bias power supply is
`connected to the pedestal electrode 18 to create a
`negative DC self-bias on the wafer 20”)
`
`The combination of Wang and Lantsman discloses a
`gas flow controller that controls a flow of the feed
`gas so that the feed gas diffuses the strongly-ionized
`plasma.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 6
`
`Wang discloses a method for high deposition rate
`sputtering.
`
`Wang at Title (“pulsed sputtering with a small
`rotating magnetron”)
`
`Wang at 7:19-25 (“Preferably, the peak power Pp is
`at least 10 times the background power Ps, more
`preferably at least 100 times, and most preferably
`1000 times to achieve the greatest effect of the
`invention. A background power Ps of 1 kW will
`typically be sufficient to support a plasma with the
`torpedo magnetron and a 200 mm wafer although
`with little if any actual sputter deposition.”)
`
`Wang at 7:36-39 (“However, it is possible to
`combine highly ionized sputtering during the pulses
`with significant neutral sputtering during the
`background period.”)
`
`Wang discloses generating a voltage pulse between
`the anode and the cathode assembly comprising a
`sputtering target, the voltage pulse creating a weakly-
`- 6 -
`
`31. The sputtering source of claim 17
`further comprising a gas flow
`controller that controls a flow of the
`feed gas so that the feed gas diffuses
`the strongly-ionized plasma.
`
`[34pre]. A method for high deposition
`rate sputtering, the method
`comprising:
`
`[34a] a) generating a voltage pulse
`between the anode and the cathode
`assembly comprising a sputtering
`
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`EXHIBIT C.13
`U.S. Patent No. 7,811,421
`‘421 Claims 6, 31, 44, and 45
`Wang in view of Lantsman
`
`target, the voltage pulse creating a
`weakly-ionized plasma and then a
`strongly-ionized plasma from the
`weakly-ionized plasma without an
`occurrence of arcing between the
`anode and the cathode assembly; and
`
`[34b] b) adjusting an amplitude and a
`rise time of the voltage pulse to
`increase a density of ions in the
`strongly-ionized plasma.
`
`44. The method of claim 34 further
`comprising diffusing the weakly-
`ionized plasma with a volume of the
`feed gas while ionizing the volume of
`the feed gas to create additional
`weakly-ionized plasma.
`
`ionized plasma and then a strongly-ionized plasma
`from the weakly-ionized plasma without an
`occurrence of arcing between the anode and the
`cathode assembly.
`
`See evidence cited in claim [1a]
`
`See evidence cited in claim [1b]
`
`Wang discloses adjusting an amplitude and a rise
`time of the voltage pulse to increase a density of ions
`in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`The combination of Wang and Lantsman discloses
`diffusing the weakly-ionized plasma with a volume
`of the feed gas while ionizing the volume of the feed
`gas to create additional weakly-ionized plasma.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 6
`
`45. The method of claim 34 further
`comprising exchanging a volume of
`feed gas to diffuse the strongly-
`ionized plasma while applying the
`voltage pulse to the cathode assembly
`to generate additional strongly-ionized
`plasma from the volume of the feed
`gas.
`
`The combination of Wang and Lantsman discloses
`exchanging a volume of feed gas to diffuse the
`strongly-ionized plasma while applying the voltage
`pulse to the cathode assembly to generate additional
`strongly-ionized plasma from the volume of the feed
`gas.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 6
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