EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`
`References cited herein:
`
`(cid:120) U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
`(cid:120) D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`(cid:120) A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`[1pre.] A magnetically
`enhanced sputtering
`source comprising:
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses a
`magnetically enhanced sputtering source.
`Mozgrin 403, right col, ¶4 (“Regime 2 was characterized by
`intense cathode sputtering…”)
`Mozgrin at Fig. 1
`
`
`
`
`
`[1a.] an anode;
`
`The combination of Mozgrin with Kudryavtsev discloses an
`anode.
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`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`‘759 Patent at Fig. 1
`
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional view of a
`known magnetron sputtering apparatus having a pulsed power
`source.”)
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly.”)
`Mozgrin at Fig. 1
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`[1b.] a cathode assembly
`that is positioned
`adjacent to the anode, the
`cathode assembly
`including a sputtering
`target;
`
`
`The combination of Mozgrin with Kudryavtsev discloses a
`cathode assembly that is positioned adjacent to the anode, the
`cathode assembly including a sputtering target.
`‘759 Patent at Fig. 1
`
`
`‘759 Patent at 3:10-12 (“FIG. 1 illustrates a cross-sectional view
`of a known magnetron sputtering apparatus having a pulsed power
`source.”)
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`‘759 Patent at 3:23-24 (“magnetron sputtering apparatus 100 also
`includes a cathode assembly 114 having a target material 116.”)
`Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by
`intense cathode sputtering…”).
`Mozgrin at 403, right col, ¶ 4 (“…The pulsed deposition rate of
`the cathode material…”).
`Mozgrin at Fig. 1
`
`
`
`
`
`[1c.] an ionization source
`that generates a weakly-
`ionized plasma proximate
`to the anode and the
`cathode assembly;
`
`The combination of Mozgrin with Kudryavtsev discloses an
`ionization source that generates a weakly-ionized plasma
`proximate to the anode and the cathode assembly.
`‘759 Patent at 6:30-32 (“The weakly-ionized plasma is also
`referred to as a pre-ionized plasma.”)
`‘759 Patent at claim 32 (“wherein the peak plasma density of the
`weakly-ionized plasma is less than about 1012 cm(cid:1956)3”).
`Mozgrin at 401, right col, ¶2 (“For pre-ionization, we used a
`stationary magnetron discharge; the discharge current ranged up to
`300 mA…. We found out that only the regimes with magnetic
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`field strength not lower than 400 G provided the initial plasma
`density in the 109 – 1011 cm-3 range.”). (emphasis added).
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge had an
`annular shape and was adjacent to the cathode.”). (emphasis
`added)
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical voltage and
`current oscillograms.… Part I in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”).
`Mozgrin at Fig. 6
`
`[1d.] a magnet that is
`positioned to generate a
`magnetic field proximate
`to the weakly-ionized
`plasma, the magnetic
`field substantially
`
`
`The combination of Mozgrin with Kudryavtsev discloses a magnet
`that is positioned to generate a magnetic field proximate to the
`weakly-ionized plasma, the magnetic field substantially trapping
`electrons in the weakly-ionized plasma proximate to the sputtering
`target.
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
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`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`trapping electrons in the
`weakly-ionized plasma
`proximate to the
`sputtering target; and
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`known magnetron sputtering apparatus 100…” that has a magnet
`126.”)
`‘759 Patent at 4:4-10 [describing the prior art Fig. 1] (“The
`electrons, which cause ionization, are generally confined by the
`magnetic fields produced by the magnet 126. The magnetic
`confinement is strongest in a confinement region 142….”)
`Mozgrin at 401, left col, ¶ 1 (“The electrodes were immersed in a
`magnetic field of annular permanent magnets.”).
`Mozgrin at 401, right col, ¶2 (“We found out that only the regimes
`with magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-1011 cm-3 range.”).
`Mozgrin at 407, left col, ¶ 3 (“The action of the magnetic field
`serves only to limit the electron thermal conductivity and to
`provide collisions sufficient for efficient energy transfer from
`electrons to heavy particles.”).
`Mozgrin at Fig. 1
`
`
`
`
`
`[1e.] a power supply
`
`The combination of Mozgrin with Kudryavtsev discloses a power
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`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`generating a voltage
`pulse that produces an
`electric field between the
`cathode assembly and the
`anode, the power supply
`being configured to
`generate the voltage
`pulse with an amplitude
`and a rise time that
`increases an excitation
`rate of ground state
`atoms that are present in
`the weakly-ionized
`plasma to create a multi-
`step ionization process
`that generates a strongly-
`ionized plasma, which
`comprises ions that
`sputter target material,
`from the weakly-ionized
`plasma, the multi-step
`ionization process
`comprising exciting the
`ground state atoms to
`generate excited atoms,
`and then ionizing the
`excited atoms within the
`weakly-ionized plasma
`without forming an arc
`discharge.
`
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`supply generating a voltage pulse that produces an electric field
`between the cathode assembly and the anode, the power supply
`being configured to generate the voltage pulse with an amplitude
`and a rise time that increases an excitation rate of ground state
`atoms that are present in the weakly-ionized plasma to create a
`multi-step ionization process that generates a strongly-ionized
`plasma, which comprises ions that sputter target material, from the
`weakly-ionized plasma, the multi-step ionization process
`comprising exciting the ground state atoms to generate excited
`atoms, and then ionizing the excited atoms within the weakly-
`ionized plasma without forming an arc discharge.
`‘759 Patent, claim 33 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm(cid:1956)3”)
`Mozgrin at Fig. 1
`
`
`
`
`
`Mozgrin at Fig. 2
`
`
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`Mozgrin at Fig. 3
`
`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was made
`providing square voltage and current pulses with [rise] times
`(leading edge) of 5 – 60 μs…”).
`Mozgrin 403, right col, ¶4 (“Regime 2 was characterized by
`intense cathode sputtering…”) (emphasis added).
`Mozgrin at 409, left col, ¶5 (“The high-current diffuse discharge
`(regime 3) is useful for producing large-volume uniform dense
`plasmas ni (cid:35) 1.5x1015cm-3…”)
`Mozgrin at 401, ¶ spanning left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Kudryavtsev] of ionization relaxation on
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`pre-ionization parameters, pressure, and pulse voltage
`amplitude.”)
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`Mozgrin at 400, right col, ¶ 1 (“A further increase in the discharge
`currents caused the discharges to transit to the arc regimes…”).
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial
`plasma density in the 109 – 1011 cm-3 range.”)
`Mozgrin at 404, left col, ¶ 3 (“The parameters of the shaped-
`electrode discharge…transit to arc regime 4, could be well
`determined… The point of the planar-magnetron discharge transit
`to the arc regime was determined by discharge voltage and
`structure changes...”).
`Mozgrin at 404, left col, ¶ 4 (“If the current was raised above 1.8
`kA or the pulse duration was increase to 2 – 10 ms, an instability
`development and discharge contraction was observed.”).
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm-3).”).
`Mozgrin at Fig. 4
`
`Mozgrin at Fig. 7
`
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas
`breakdown, laser sparks, etc.”)
`Kudryavtsev at Fig. 1
`
`Kudryavtsev at Fig. 6
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in
`ne with time thus enables us to arbitrarily divide the ionization
`process into two stages, which we will call the slow and fast
`growth stages. Fig. 1 illustrates the relationships between the
`main electron currents in terms of the atomic energy levels during
`the slow and fast stages.”).
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne
`[plasma density]. The subsequent increase in ne then reaches its
`maximum value, equal to the rate of excitation [equation omitted],
`which is several orders of magnitude greater than the ionization
`rate during the initial stage.”)
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma
`at moderate pressures… [i]t is shown that the electron density
`increases explosively in time due to accumulation of atoms in the
`lowest excited states.”)
`One of ordinary skill would have been motivated to use
`Kudryavtsev’s fast stage of ionization in Mozgrin so as to increase
`plasma density and thereby increase the sputtering rate. Further,
`use of Kudryavtsev’s fast stage in Mozgrin would have been a
`combination of old elements that in which each element performed
`as expected to yield predictable results of increasing plasma
`density and multi-step ionization.
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`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`2. The sputtering source
`of claim 1 wherein the
`power supply generates a
`constant power.
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses the
`power supply generates a constant power.
`See evidence cited in claim 1.
`‘759 Patent at Fig. 5
`’759 Patent, 11:48-50 (“Between time t1 and time t2, the voltage
`326, the current 328, and the power 326 remain constant…”).
`Mozgrin Fig. 3 shows constant power in region 3
`
`3. The sputtering source
`of claim 1 wherein the
`power supply generates a
`constant voltage.
`
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`power supply generates a constant voltage.
`See evidence cited in claim 1.
`Mozgrin at Fig. 3
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`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`5. The sputtering source
`of claim 1 wherein the
`electric field comprises a
`pulsed electric field.
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses the
`electric field comprises a pulsed electric field.
`See evidence cited in claim 1.
`Mozgrin at Fig. 1
`
`
`Mozgrin, at 403-404, right col, last paragraph of 403, left col, first
`paragraph of 404 (“…The current pulse … repetition frequency
`was 10 Hz...”).
`Mozgrin at Fig. 3
`
`6. The sputtering source
`of claim 1 wherein the
`rise time of the voltage
`
`
`The combination of Mozgrin with Kudryavtsev discloses the rise
`time of the voltage pulse is chosen to increase the ionization rate
`of the excited atoms in the weakly-ionized plasma.
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`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`pulse is chosen to
`increase the ionization
`rate of the excited atoms
`in the weakly-ionized
`plasma.
`
`
`7. The sputtering source
`of claim 1 wherein the
`weakly-ionized plasma
`reduces the probability of
`developing an electrical
`breakdown condition
`between the anode and
`the cathode assembly.
`
`8. The sputtering source
`of claim 1 wherein the
`ions in the strongly-
`ionized plasma impact
`the surface of the
`sputtering target in a
`manner that causes
`substantially uniform
`erosion of the sputtering
`target.
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`See evidence cited in claim 1.
`Mozgrin at 401, right col, ¶ 1 (“[t]he power supply was able to
`deliver square voltage and current pulses with [rise] times (leading
`edge) of 5 – 60 μs ….”).
`Kudryavtsev at Fig. 1
`
`The combination of Mozgrin with Kudryavtsev discloses the
`weakly-ionized plasma reduces the probability of developing an
`electrical breakdown condition between the anode and the cathode
`assembly.
`See evidence cited in claim 1.
`Mozgrin at 406, right col, ¶3 (“pre-ionization was not necessary;
`however, in this case, the probability of discharge transferring to
`arc mode increased.”)
`
`The combination of Mozgrin with Kudryavtsev discloses the ions
`in the strongly-ionized plasma impact the surface of the sputtering
`target in a manner that causes substantially uniform erosion of the
`sputtering target.
`See evidence cited in claim 1.
`Mozgrin at Fig. 1
`Mozgrin, at 403, left col, last ¶ (“…being transferred to the high-
`current regime, the discharge expands over a considerably larger
`area of the cathode surface than it occupied in the stationary pre-
`ionization regime.”).
`Mozgrin at 404, left col, ¶ 4 (“…the discharge plasma and current
`area were seen to expand and cover the whole cathode surface
`(Fig. 6).”)
`One of ordinary skill would understand that expanding the plasma
`increases its uniformity. One of ordinary skill in the art would
`understand that the plasma discharge covering a larger area of the
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`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`9. The sputtering source
`of claim 1 wherein the
`strongly-ionized plasma
`is substantially uniform
`proximate to the
`sputtering target.
`
`
`10. The sputtering source
`of claim 1 further
`comprising a substrate
`support that is positioned
`in a path of the sputtering
`flux.
`
`
`13. The sputtering source
`of claim 1 wherein a
`volume between the
`anode and the cathode
`assembly is chosen to
`increase the ionization
`rate of the excited atoms
`in the weakly-ionized
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`cathode surface during sputtering would impact the surface of the
`sputtering target in a substantially uniform manner and lead to a
`substantially more uniform erosion of the sputtering target
`Mozgrin at Fig. 1
`Mozgrin, at 403, left col, last ¶ (“…being transferred to the high-
`current regime, the discharge expands over a considerably larger
`area of the cathode surface than it occupied in the stationary pre-
`ionization regime.”).
`Mozgrin at 404, left col, ¶ 4 (“…the discharge plasma and current
`area were seen to expand and cover the whole cathode surface
`(Fig. 6).”)
`One of ordinary skill would understand that expanding the plasma
`increases its uniformity. One of ordinary skill in the art would
`understand that the plasma discharge covering a larger area of the
`cathode surface during sputtering would impact the surface of the
`sputtering target in a substantially uniform manner and lead to a
`substantially more uniform erosion of the sputtering target
`The combination of Mozgrin with Kudryavtsev discloses a
`substrate support that is positioned in a path of the sputtering flux.
`See evidence cited in claim 1.
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…”)
`‘759 Patent at 3:44-46 (“substrate 134 is positioned in the vacuum
`chamber 104 on a substrate support 135 to receive the sputtered
`target material 116.”)
`Mozgrin, at 403, right col, ¶ 4 (“To study sputtering, we used a
`probecollector placed 120 mm from the cathode. The pulsed
`deposition rate of cathode material (copper was used) turned out to
`be about 80 μm/min…”).
`The combination of Mozgrin with Kudryavtsev discloses a volume
`between the anode and the cathode assembly is chosen to increase
`the ionization rate of the excited atoms in the weakly-ionized
`plasma.
`See evidence cited in claim 1.
`See evidence cited in claim 6.
`Mozgrin’s experiments were conducted in actual magnetrons with
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`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`plasma.
`
`14. The sputtering source
`of claim 1 wherein the
`ionization source
`comprises an electrode.
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`an actual volume between the anode and the cathode. Mozgrin’s
`ionization rate of excited atoms increased within that volume.
`Moreover, if one of ordinary skill building a system according to
`Mozgrin did not experience Kudryavtsev’s “explosive increase” in
`plasma density, it would have been obvious to incorporate
`Kudryavtsev’s fast stage into Mozgrin so as to increase plasma
`density and thereby increase the sputtering rate. Further, use of
`Kudryavtsev’s fast stage in Mozgrin would have been a
`combination of old elements that yielded predictable results to
`increase plasma density and multi-step ionization.
`The combination of Mozgrin with Kudryavtsev discloses the
`ionization source comprises an electrode.
`See evidence cited in claim 1.
`Mozgrin at Fig. 1
`
`
`
`
`
`15. The sputtering source
`of claim 1 wherein the
`ionization source
`comprises a DC power
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`ionization source comprises a DC power supply that generates an
`electric field proximate to the anode and the cathode assembly.
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`See evidence cited in claim 1.
`Mozgrin at Fig. 2
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`supply that generates an
`electric field proximate
`to the anode and the
`cathode assembly.
`
`
`
`Mozgrin at 401, left col, ¶ 5 (“…The pre-ionization system
`provided direct current up to 0.3A and voltage up to 3 kV.”)
`Mozgrin at Fig. 1
`
`
`
`
`
`
`
`Mozgrin at Fig. 3
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`16. The sputtering source
`of claim 1 wherein the
`ionization source
`comprises an AC power
`supply that generates an
`electric field proximate
`to the anode and the
`cathode assembly.
`
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`ionization source comprises an AC power supply that generates an
`electric field proximate to the anode and the cathode assembly.
`See evidence cited in claim 1.
`‘759 Patent at 4:52-54 (“In one embodiment, the bias voltage
`source 214 is an alternating current (AC) power source, such as a
`radio frequency (RF) power source.”)
`Mozgrin at 401, left col, ¶ 4 (“The pre-ionization could be
`provided by RF discharge…”).
`Mozgrin at Fig. 1
`
`
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`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`18. The sputtering source
`of claim 1 wherein the
`magnet comprises an
`electro-magnet.
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`magnet comprises an electro-magnet.
`See evidence cited in claim 1.
`Mozgrin at 401, left col, ¶ 2 (“The system with shaped electrodes
`involved two axisymmetrical electrodes 120 mm in diameter
`separated by about 10 mm, and immersed in a cusp-shaped
`magnetic field produced by oppositely directed multilayer coils.
`The values of Bmax were controlled by coil current variation to
`range from 0 to 1000 G.”).
`Mozgrin at Fig. 1
`
`
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`19
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`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`19. The sputtering source
`of claim 1 wherein the
`sputtering target is
`formed of a material
`chosen from the group
`comprising a metallic
`material, a polymer
`material, a
`superconductive material,
`a magnetic material, a
`non-magnetic material, a
`conductive material, a
`non-conductive material,
`a composite material, a
`reactive material, and a
`refractory material.
`
`
`[20pre.] A method of
`generating sputtering
`flux, the method
`comprising:
`
`
`[20a.] ionizing a feed gas
`to generate a weakly-
`ionized plasma proximate
`to a sputtering target;
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`sputtering target is formed of a material chosen from the group
`comprising a metallic material, a polymer material, a
`superconductive material, a magnetic material, a non-magnetic
`material, a conductive material, a non-conductive material, a
`composite material, a reactive material, and a refractory material.
`See evidence cited in claim 1.
`Mozgrin at 401, left col, ¶ 1, (“The cathodes we used were made
`of Cu, Mo, Ti, Al, or stainless steel.”).
`
`The combination of Mozgrin with Kudryavtsev discloses a method
`of generating sputtering flux.
`See evidence cited in limitation [1pre] of claim 1.
`Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by
`intense cathode sputtering…”).
`The combination of Mozgrin with Kudryavtsev discloses ionizing
`a feed gas to generate a weakly-ionized plasma proximate to a
`sputtering target.
`See evidence cited in limitation [1c] of claim 1.
`‘759 Patent at 6:30-32 (“The weakly-ionized plasma is also
`referred to as a pre-ionized plasma.”)
`‘759 Patent at claim 32 (“wherein the peak plasma density of the
`weakly-ionized plasma is less than about 1012 cm(cid:1956)3”)
`Mozgrin at Fig. 2
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical voltage and
`
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`

`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`current oscillograms.… Part I in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we used a
`stationary magnetron discharge; … provided the initial plasma
`density in the 109 – 1011 cm(cid:1956)3 range.”)
`Mozgrin at 400, right col, ¶ 3 (“We investigated the discharge
`regimes in various gas mixtures at 10-3 – 10 torr…”)
`Mozgrin at 402, ¶ spanning left and right cols (“We studied the
`high-current discharge in wide ranges of discharge current…and
`operating pressure…using various gases (Ar, N2, SF6, and H2) or
`their mixtures of various composition…”)
`Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by
`intense cathode sputtering…”).
`The combination of Mozgrin with Kudryavtsev discloses
`generating a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in the
`weakly-ionized plasma proximate to the sputtering target.
`‘759 Patent at 3:10-12 (“Fig. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…”)
`‘759 Patent at 4:4-10 (“The electrons, which cause ionization, are
`generally confined by the magnetic fields produced by the magnet
`126. The magnetic confinement is strongest in a confinement
`region 142….”)
`Mozgrin at 401, left col, ¶ 1 (“The electrodes were immersed in a
`magnetic field of annular permanent magnets.”)
`Mozgrin at 401, right col, ¶2 (“We found out that only the regimes
`with magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-1011 cm-3 range.”)
`Mozgrin at 407, left col, ¶ 3 (“The action of the magnetic field
`serves only to limit the electron thermal conductivity and to
`provide collisions sufficient for efficient energy transfer from
`electrons to heavy particles.”)
`The combination of Mozgrin with Kudryavtsev discloses applying
`a voltage pulse to the weakly-ionized plasma, an amplitude and a
`rise time of the voltage pulse being chosen to increase an
`excitation rate of ground state atoms that are present in the
`
`21
`
`[20b.] generating a
`magnetic field proximate
`to the weakly-ionized
`plasma, the magnetic
`field substantially
`trapping electrons in the
`weakly-ionized plasma
`proximate to the
`sputtering target; and
`
`
`[20c.] applying a voltage
`pulse to the weakly-
`ionized plasma, an
`amplitude and a rise time
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`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`of the voltage pulse being
`chosen to increase an
`excitation rate of ground
`state atoms that are
`present in the weakly-
`ionized plasma to create
`a multi-step ionization
`process that generates a
`strongly-ionized plasma,
`which comprises ions
`that sputter target
`material, from the
`weakly-ionized plasma,
`the multi-step ionization
`process comprising
`exciting the ground state
`atoms to generate excited
`atoms, and then ionizing
`the excited atoms within
`the weakly-ionized
`plasma without forming
`an arc discharge.
`
`
`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`weakly-ionized plasma to create a multi-step ionization process
`that generates a strongly-ionized plasma, which comprises ions
`that sputter target material, from the weakly-ionized plasma, the
`multi-step ionization process comprising exciting the ground state
`atoms to generate excited atoms, and then ionizing the excited
`atoms within the weakly-ionized plasma without forming an arc
`discharge.
`‘759 Patent, claim 33 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm(cid:1956)3”)
`Mozgrin at Figs. 1, 2, 3
`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was made
`providing square voltage and current pulses with [rise] times
`(leading edge) of 5 – 60 μs…”)
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial
`plasma density in the 109 – 1011 cm-3 range.”)
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm(cid:1956)3).”)
`Mozgrin at 403, right col, ¶4 (“Regime 2 was characterized by
`intense cathode sputtering…”)
`Mozgrin at 401, ¶ spanning left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Kudryavtsev] of ionization relaxation on
`pre-ionization parameters, pressure, and pulse voltage
`amplitude.”)
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`Mozgrin at 404, left col, ¶ 3 (“The parameters of the shaped-
`electrode discharge…transit to arc regime 4, could be well
`determined… The point of the planar-magnetron discharge transit
`to the arc regime was determined by discharge voltage and
`structure changes...”)
`
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`

`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`
`Kudryavtsev at Figs. 1, 6
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas
`breakdown, laser sparks, etc.”)
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in
`ne with time thus enables us to arbitrarily divide the ionization
`process into two stages, which we will call the slow and fast
`growth stages. Fig. 1 illustrates the relationships between the
`main electron currents in terms of the atomic energy levels during
`the slow and fast stages.”)
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne
`[plasma density]. The subsequent increase in ne then reaches its
`maximum value, equal to the rate of excitation [equation omitted],
`which is several orders of magnitude greater than the ionization
`rate during the initial stage.”)
`Because Mozgrin applies voltage pulses that “suddenly generate
`an electric field,” one of ordinary skill reading Mozgrin would
`have been motivated to consider Kudryavtsev to better understand
`the effects of applying Mozgrin’s pulse.
`If one of ordinary skill building a system according to Mozgrin did
`not experience Kudryavtsev’s “explosive increase” in plasma
`density, it would have been obvious to adjust the operating
`parameters, e.g., increase the pulse length and/or pressure, so as to
`trigger Kudryavtsev’s fast stage of ionization. One of ordinary
`skill would have been motivated to use Kudryavtsev’s fast stage of
`ionization in Mozgrin so as to increase plasma density and thereby
`increase the sputtering rate. Further, use of Kudryavtsev’s fast
`stage in Mozgrin would have been a combination of old elements
`that in which each element performed as expected to yield
`predictable results of increasing plasma density and multi-step
`ionization. Finally, because Mozgrin’s pulse, or the pulse used in
`the combination of Mozgrin and Kudryavtsev, produced
`Kudryavtsev’s fast stage of ionization, the rise time and amplitude
`of the pulse result in increasing the ionization rate of excited
`atoms and creation of a multi-step ionization process.
`22. The method of claim The combination of Mozgrin with Kudryavtsev discloses the
`
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`

`EXHIBIT A.01
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`applying the electric field comprises applying a substantially
`uniform electric field.
`See evidence cited in claim 20.
`Mozgrin at Fig. 1.
`
`
`
`Claims 1-3, 5-10, 13-16,
`18-20, 22-34, 37, 40-43
`and 45-46, 48, 50
`20 wherein the applying
`the electric field
`comprises applying a
`substantially uniform
`electric field.
`
`
`
`
`23. The method of claim
`20 wherein the applying
`the electric field
`comprises applying an
`electrical pulse across the
`weakly-ionized plasma.
`
`
`
`The combination of Mozgrin with Kudryavtsev discloses the
`applying the electric field comprises applying an electrical pulse
`across the weakly-ionized plasma.
`See evidence cited in claim 20.
`Mozgrin at Fig. 1.
`
`
`
`
`
`Mozgrin at Fig. 3.
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