08/14l2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`JUN 1 4 2004
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`loos/023
`
`RECEIVED
`W FAX cm
`
`PATENT
`
`Attorney Docket No.: EON-001
`/"
`
`.
`FEVER/“fin n
`QHireiL'JlL
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL No.2
`FILING DATE:
`TITLE:
`
`1753
`GROUP NO;
`10/065,277
`McDonald Rodney G.
`EXAMINER:
`September 30, 2002
`HIGH—POWER PULSED MAGNETRON SPUTTERTNG
`
`Commissioner for Patents
`Alexandria, Virginia 22313-1450
`
`AMENDMENT AND RESPONSE
`
`Sir:
`
`The following amendments and remarks are responsive to the Office Action mailed on
`January 15, 2004 in the above-identified patent application. Entry and consideration of the
`following amendments and remarks, and allowance ofthe claims, as presented, are re5pectfuily.
`requested. A Petition for a two—month extension oftime, up to and including Tuesday, June 15,
`2004 is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`the additional claims fee, and an},r other proper fees to Attorney's Deposit Account No. 501211.
`
`Please enter the following amendments and consider the remarks that follow.
`
`PAGE 606* ROWAT $102004 10:56.05 PM [EasternDaylightTime] ‘ SVR:USPTD-EFXRF-1i0* DNIS:8729306*CSID:781 271 162?‘ DURATION (mm-SS):08-12
`GILLETTE 1207
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`GILLETTE 1207
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`06/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`.007/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.1 10I065339
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 4, 5, 6, 8, 12, 16, 19, 21, 25, and 27-30, cancel claims 3 and 18
`
`without prejudice, and add claims 31-39 as follows.
`
`i.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode. the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly-ionized plasma proximate to the anode and
`
`the cathode assembly; and
`
`a power supply that generates a voltagc’pulfig shot—produces-an—eleetfiefield-beMeen the
`anode and the cathode assemblyfie—eleetrie—field that creatfii‘ng a strongly-ionized
`
`plasma from the weakly-ionized plasma, an amplitude and a rise time of the voltage pulse
`being chosen to increase the-strongly-ieniaed—plasrne-eempfisiflg a valence—density of ions
`
`in the stron gig—ionized plasmaWWW generate
`
`Sufficient thermal energy in the sputtering target to cause a sputtering yield of the
`
`sputtering target to be non-linearly related to a temperature of the sputtering target.
`
`2.
`
`(original) The Sputtering source of claim 1 wherein the electric field comprises a quasi—
`
`3.
`
`4.
`
`static electric field.
`
`(cancelled).
`
`(currently amended) The sputtering source of claim 3- 1 further comprising a gas flow
`controllerWW that centrols a flow of feed gas to the strongly-
`
`ionigcg plasma, the additional feed gas allowing additional p_ower to be absorbed by the
`
`
`
`
`
`MLI-L-‘
`Ina-AAJJn-J - “-
`
`
`
`Wee-Wthmby generating additional thermal
`
`energy in the sputtering target.
`
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`08/14/2004 MDN 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`.005/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10l065,277
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 6. 7. 20, 34, and 40 and add claims 41-48 as follows.
`
`1.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode and—fesming—a—gap
`
`Hierebetween, the cathode assembly including a sputtering target;
`
`c)
`
`an ionization source that generates a weakly—ionized plasma proxim ate to the
`
`anode and the cathode assembly;
`
`6)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plaSrna, the magnetic field substantially trapping electrons in the weakly-
`
`ionizecl plasma proximate to the sputtering target; and
`
`e)
`
`a power supply ggiemgn'g a voltage pulse that produces an electric field between
`
`the cathode assembly and the anode, eerese—the—geprflae-elecHiG-field an amplitude
`
`and a rise time of the voltage pulse being chosen to increase an excitation rate of
`
`und state at m
`
`at a
`
`e t '
`
`c weak] —i0ni7.ed
`
`lasrna to create a multi—
`
`step ionization process that generates a siren gly—ioaized plasma fiom the weakly-
`
`jgm‘zfl plasma, the multi-stgp— ionization process comprising exciting the ground
`
`state atoms to generate generating excited atoms and then m—the—wealdy—renieed
`
`seeoaéaey—eleea-‘ens ionizing the excited atoms within the weakly-ionized plasma
`
`WW create ions that impact—a
`
`sasfae—e—of—the sputter target material from the sputtering targctg-te-generate
`
`sputtering—flak
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
`PAGE 8R6 * RCVD AT fillii20ll4 10:56:05 PM [Eastern Daylight Timel“ SVR:USPTO-EFXRF-illl* DNIS:8?29305* CSIDilfll 271 152? ‘ DURATION (mm-ss):08-12
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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RALTSCHENBACH
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`[1009/0213
`
`Amendment and Response
`Applicant: Chistyakov
`SerialNo.: 10/065,277
`(Page 3 of20
`
`3.
`
`(original) The sputtering so tune of claim 1 wherein the pewer supply generates a
`
`constant voltage.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a quasi—
`
`static electric field.
`
`(original) The Sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(currently amended) The sputtering source of claim 1 wherein a the rise time of the
`
`voltage pulse acetate-field is chosen to increase the ionization rate of the excited atoms in
`
`the weakly-ionized plasma.
`
`(currently amended) The sputtering source of claim 1 wherein the weakly-ionized
`
`Elm gas reduces the probability of developing an electrical breakdown condition
`
`between the anode and the cathode assembly.
`
`(original) The Sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma impact the surface of the sputtering target in a manner that causes substantially
`
`uniform erosion of the sputtering target.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of the sputtering flux.
`
`ll.
`
`(original) The sputtering source of claim 10 Further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`12.
`
`(original) The sputtering source of claim 10 further comprising a bias voltage power
`
`supply that applies a bias voltage to a substrate that is positioned on the substrate support.
`
`PAGE 9l26 ' RCVD AT fil14l2004 10:56:05 PM [Eastern DayllghtTune]* SWUSPTO-EFXRF-llfl " DNIS:8?29305* CSID:781 271 1527* DURATION laments-12
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`06/14/2004 MUN 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`I010/026
`
`Amendment and Response
`Applicant: Chistyalrov
`Serial No.: 10/065,277
`Page 4 of 20
`
`l3.
`
`14.
`
`15.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
`
`power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`16.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`17.
`
`(original) The sputtering source of claim 1 wherein the ionizatiou source is chosen from
`
`the group comprising a UV source, an X—ray source, an electron beam source, and an ion
`beam source.
`
`18.
`
`(original) The sputtering scurce of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`19.
`
`(original) The sputtering source of claim 1 wherein the sputtering target is formed of a
`material chosen From the group comprising a metallic material, a polymer material. a
`
`superconductive material, a magnetic material, a non-magnetic material, a conductive
`
`material. a non-conductive material, a composite material, a reactive material, and a
`
`refractory material.
`
`20.
`
`(currently amended) A method of generating sputtering flux, the method comprising:
`
`a)
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
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`

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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHEN'BACH
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`l23(111/026
`
`Amendment and Response
`Applicant: Chisryakov
`Serial ND.: 10/065,277
`Page 5 of 20
`
`b)
`
`generating a magnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target; and
`
`c)
`
`applying an—eleetriervfie-ld g yoltage pulse to the weakly;ionized plasmaafl
`
`amplitude and a rise time of the voltage pulse being chosen tg ippmase gg
`
`expg'tatjgn rate of gr_ound state atoms that are present in the weakly-ionized plasma
`
`1 c ' e a
`
`t'-s
`
`ionization recess that eneratcs a stron l —ionized lasrna
`
`fiom the weakly-ionized plasma. the multi-stgp ionization process comprising
`
`exciting the mum] state atoms to generate excited dent-oneites atoms and then
`
`
`electrons-ionizing the excited atoms within the weakly-ippigeg plasma to 4hereby
`
`Wig—amngly-iemzed—plasma—heflag_create ions that isnpaoka—sur—Faoe—ef—the
`
`sputter target material fi-om the Sputtering target4 to—generate—sputtering—fluae
`
`21.
`
`(original) The method of claim 20 wherein the applying the electric field comprises a
`
`applying a quasi-static electric field.
`
`22.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`23.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the weakly—ionized plasma.
`
`24.
`
`(original) The method of claim 23 further cemprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`25.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that reduces a probability of
`
`developing an electrical breakd0wn condition proximate to the sputtering target.
`
`PAGE 11m ‘ RCVD AT H14l2004 10:56:95 PM [Eastern Daylight Time] * SVR:USPTO-EFXRF-1l0‘ Dll|513729306 " CSID:?81 271 152? ‘ DURATION (mm-ss]:03-12
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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`Ion/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,277
`Page 6 of 20
`
`26.
`
`27.
`
`(Original) The method ofclaim 23 further comprising selecting at least one of a pulse
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface of the sputtering target.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`a current density that is greater than 1A/cmz.
`
`28.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`29.
`
`30.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse train
`having a repetition rate that is substantially between 0, 11-12 and 1m;
`
`(original) The method of claim 20 wherein the ions in the strongly-ionized plasma
`impact the surface of the sputtering target in a substantially uniform manner.
`
`31.
`
`(original) The method of claim 20 wherein the strongly-ionized plasma is Substantially
`
`uniform proximate to the sputtering target.
`
`32.
`
`33.
`
`34.
`
`(original) The method of claim 20 wherein the peak plasma density of' the weakly-
`iom'zcd plasma is less than about 1012 em".
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`ionized plasma is greater than about 1012 em".
`
`(currently amended) The method of claim 20 further comprising fanning a film fiend-the
`sputtering—fines on a surface of a substrate from the material sputtered from the muttering
`
`target.
`
`35.
`
`(original) The method of claim 34 further comprising controlling a temperature ofthc
`
`film.
`
`36.
`
`(original) The method of claim 34 further comprising applying a bias voltage to the film.
`
`PAGE 1326‘ RCVD AT 5i1ii2l10410:56:05 PM [Eastern Daylight Tlmel' SVR:USPTO-EFXRF-1ID* DH|518729306 ‘ CSID:?31 271 1527* DURATION (mm-ssliflll-fl
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`@013/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No: 10/065,277
`Page 7 of 20
`37.
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electric field.
`
`38.
`
`39.
`
`(original) '1‘he method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electrode that is adapted to emit electrons.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`
`an ion beam source.
`
`40.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`c)
`
`means [or ionizing a feed gas to generate a weakly—ionized plasma proximate to a
`
`sputtering target;
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping electrons in the weakly-ionized plasma
`
`proximate to the sputtering target; and
`
`means for applying aa-eieeH-ie-fieié a vpltage pulse to the weakly-ionized plasma;
`an amplitude and a rise time or the voltage pulse being chgsen to increase an
`excitation rate ofground state atoms that are present in the weakly-ionized plasma
`to create a. mum-step ionization process that generates a strongly-ionized plasma
`from the weak] -ionized lasma the multi-ste ionization
`c
`s
`'
`'
`
`exciting the ggound state atoms to generate excited that—exeites atoms and then
`
`electrons-ionizing the excited atoms within the weakly-ionized plasma to thereby
`Wm_create ions thatW
`sputter target material fight the sputtering target;W
`
`41.
`
`(new) The sputtering source of claim 1 wherein the cathode assembly and the anode are
`positioned so as to form a gap therebetween,
`
`PAGE 13:25‘ RCVDAT filllflflfll 10:56:05PM [Eastern DayllghtTImEI‘ SVRIUSPTO-EFXRF-llfl’ DlllS:8?293llfi* CSIDIT81 271 152? ' DURATION(mm-sslmt-tl
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`@014/028
`
`Amendment and Response
`Applicant: Chistynkov
`Serial No.: 10/065,277
`Page 8 of 20
`
`42.
`
`(new) The sputtering source of claim 1 wherein the weakly-ionized plasma is generated
`
`from a feed gas that comprises the ground state atoms.
`
`43.
`
`(new) The sputtering source of claim 1 wherein the excited atoms within the weakly-
`
`ionized plasma are ionized by electrons to create the ions that sputter material from the
`
`sputtering target.
`
`44.
`
`(new) The sputtering source of claim 1 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and IOOV/psec.
`
`45.
`
`(new) The sputtering source of claim 1 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 30kV.
`
`46.
`
`(new) The method of claim 20 wherein the weakly~ionized plasma is generated from a
`
`feed gas that comprises the ground state atoms.
`
`47.
`
`(new) The method of claim 20 wherein a duration of the weakly-ionized plasma is
`
`approximately between one microsecOnd and one hundred seconds.
`
`48.
`
`(new) The method of claim 20 wherein the ionizing the excited atoms within the weakly—
`
`ionized plasma to create ions that Sputter material fi'omthclsputtering target comprises
`
`ionizing the excited atoms with electrons.
`
`49.
`
`(new) The method or claim 20 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and IOOWpsec.
`
`50.
`
`(new) The method of claim 20 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 301-:V.
`
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`08/14/2004 MDN 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`@015/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 9 of 20
`
`Bending Claims:
`
`REMARKS
`
`Claims 1-50 are currently pending in the present application. Claims 1, 6, 7, 20, 34,
`
`and 40 are amended by the present Amendment. Claims 41-50 are added by the present
`
`Amendment. No new matter is added by these amendments. Upon entry of the present
`
`Amendment, reconsideration of claims 1-40 and consideration of new claims 41-50 is
`
`respectfully requested.
`
`flejections under 35 U.S.C. §1 021m As Being Anticipated by Kouznetsov:
`
`Claims 1, 5-10. l3, 14. 16, 19, 20, 22—3], 34, 37, 38, and 40 are rejected under 35 U.S.C.
`
`§102(b) as being anticipated by Kouznetsov (WO98/40532) (hereinafter "Kouznetsov").
`
`Independent claims 1, 7, 20 and 40 are herein amended to more clearly recite the invention. No
`
`new matter is added by these amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10, 13, 14, 16, and 12
`
`The Applicant respectfully submits that Kouznetsov does not deScn’be each and every
`
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`
`recite a magnetically enhanced sputtering source having a power supply that generates a voltage
`
`pulse that produces an electric field between an anode and a cathode assembly. An amplitude
`
`and a rise time of the voltage pulse is chosen to increase the excitation rate of ground state atoms
`
`that are present in the weakly-ionized plasma to create a multi—step ionization process. The
`
`multi-step ionization process includes exciting the ground state atoms to generate excited atoms,
`
`and then ionizing the excited atoms in the weakly—ionized plasma. This amendment is supported
`
`by the originally-filed specification of the present application. See, for example, paragraphs 59-
`
`PAGE 15i25 ‘ RCVD AT 5i14i2llfl4 10:55:05 PM [Eastern Daylight Timel' SVR:USPTO-EFXRF-1i0' DNISISTIQSBli‘ csmnt 211 152? * DURATEON (mm-ss]:08-12
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHEN'BACH
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`.018/023
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No; 10/065,277
`Page 10 of 20
`
`69 ofthe originally-filed specification. The Applicant submits that no new matter is added by
`
`the amendments to independent claim 1.
`
`The Applicant believes that there is no description in Koumetsov of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase an
`excitation rate of ground state atoms that are present in a weakly-ionized plasma to generate a
`multi-stcp ionization process.
`instead, the Applicant believes that the pulsed power source
`described in Kouznetsov generates a gas having a fully ionized state using a single-step
`. ionization process. According to Kouznetsm, the pulsed power source used in his apparatus
`provides “pulses in such a way, i.e. that so much power is developed in each pulse. that in the
`application of such a pulse, Fer a very short time during the start ofthe pulse, the state ofthe gas
`located at the region in which the electrons are trapped by the magnetic field will very rapidly
`reach a fully ionized state. . ." See, for example, Kouznetsov page 5, lines 1-4. The application
`of a very large voltage pulse (2,000 Volts) having a fast rise time appears to fully ionize the gas
`by direct ionization From electrons located in the region having crossed electric and magnetic
`fields. See, for example, Kouznetsov page 12, lines 22-26.
`
`The Applicant respectfully submits that there is no description in Kouznetsov of a power
`supply that generates a voltage pulse which creates a multi—step ionization process that includes
`generating excited atoms from ground state atoms that are present in the weakly ionized plasma,
`and then ionizing the excited atoms in the weakly-ionized plasma as claimed in amended claim
`1.
`instead, the Applicant believes that the ionization process described in Kouznetsov is a
`single-step ionization process known as direct ionization by electron impact.
`
`in View of the above remarks, the Applicant respectfully submits that Kouznetsov does
`not describe each and every element of independent claim 1 as currently amended, either
`expressly or inherently. Therefore, the Applicant submits that Kouznetsov does not anticipate
`independent claim 1 as currently amended under 35 U.S.C. §102.(b). Thus, the Applicant
`submits that independent claim 1 as currently amended is allowable. The Applicant also submits
`that dependent claims 5-10, 13. 14, 16, and 19 are allowable as depending from an allowable
`
`base claim.
`
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`08/14/2004 HOW 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10l065,277
`Page 1 l of 20
`Independent gglaim 29 and Dgpgpgggt Claims 22-31, 34, 37, and 38
`
`Ion/023
`
`ectfully submits that Kouznetsov does not describe each and every
`The Applicant rcsp
`laim 20 is herein amended
`claim 20 as currently amended. Independent 0
`clement of independent
`ionized plasma. An amplitude and a
`to recite the step of applying a voltage pulse to the weakly-
`ltage pulse are chosen to increase an Excitation rate of ground state atoms in
`rise time ofthc vo
`step ionization process. The mum-step ionization
`the weakly-ionized plasma to create a multi-
`ionized plasma, and then
`process generates excited atoms from ground state atoms in the weakly-
`s the excited atoms in the weakly-ionized plasma. This amendment is supported by the
`icnize
`led specification ofthe present application. See. for example, paragraph 59-69 ofthe
`originally-ii
`the amendments to independent claim
`'
`'
`filed specification. No new matter is added by
`
`The Applicant believes that there is no description in Kouznetsov ofa method of
`step ionization process as claimed in
`generating a strongly-ionized plasma using a multi-
`the Applicant believes that Kouznetsov
`amended claim 20. Instead, as previously discussed,
`ess whereby the application of a very large voltage pulse.
`describes a single-step ionization proc
`-26). The ‘
`as having a fully ionized state (See page 12, lines 22
`d in Kouznetsov ionizes the gas by direct
`
`having a fast rise time creates a g
`Applicant believes that the large voltage pulse describe
`ionization from electrons located in the region of crossed electric and magnetic fields.
`
`In View ofthe above remarks, the Applicant respectfully submits that Konznetsov
`and every element ofindependent claim 20 as currently amended,
`does not describe each
`the Applicant submits that Kouzuetsov does not
`either expressly or inherently. Therefore,
`its that
`anticipate independent claim 20 as currently amended. Thus, the Applicant subrn
`amended independent claim 20 and dependent claims 22—3 1, 34, 37, and 38
`under 35 U.S.C. §102(b).
`
`are allowable
`
`Reiecjigps under 35 U.S.C. §102§h1 as Being Anticlpated by Mozgrin:
`Claims 1, 4, 5, 7, 13, 14, 16, 19-25, 27-29, 32, 33, 37, and 40 are rejected under 35
`“High Current Low—Pressure
`U.S.C. §102(b) as being anticipated by Mozgrin et a1. entitled
`' Stationary Discharge in 9. Magnetic Field: EXpeI'ln‘lean-li Resear
`
`ch", Plasma Physics
`
`PAGE171%*RCVDATfilllliflfll10:56:05PM[EasternDaylightTime]*SVEUSPTO-EFXRF-lm‘Dlll818729306‘CSID:731 211 152?‘DURATION(mm-sslzot-n
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`I013/023
`
`Amendment and Responsr.
`Applicant: Chistyakov
`SerialNo.: 10!065,277
`Page 12 of 20
`
`Reperts, Vol. 21, No. 5, 1995. pp. 400-409 (hereinafter "Mozgrin"). Independent claims 1, 20
`and 40 are herein amended to more clearly recite the invention. No new matter is added by these
`
`amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`reference must be inherently present in the reference. Thus. a claim is anticipated by a reference
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Lndgpcndent Claim 1 and Dependent Claims 4, 5, 7, 13, 14, 16, and 19
`
`The Applicant respectfully submits that Mozgrin does not describe each and every
`element of independent claim 1 as currently amended. independent claim 1 has been amended to
`recite a power supply generating a voltage pulse that produces an electric field between a
`cathode assembly and an anode. The voltage pulse has an amplitude and a rise time that are
`chosen to increase a rate of excitation ofground state atoms present in the weakly-ionized
`plasma to create a multi—step ionization process. The multi-step ionization process generates i‘
`strongly-ionized plasma from the weakly-ionized plasma by first exciting ground state atoms to
`generate excited atoms, and then by ionizing the excited atoms in the weakly-ionized plasma-
`This amendment is supported by the originally-filed specification of' the present application.
`See, for example, paragraphs 59-69 of the Originally-filed specification. The Applicant submits
`that no new matter is added by the amendments to independent claim 1.
`
`The Applicant believes that there is no description in Mozgrin of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase the
`excitation rate of groand state atoms present in the weakly-ionized plasma to create a multi-
`step ionization process. Instead, the Applicant believes that Mozgrin describes a pulsed
`diSCharge supply unit that generates a plasma with a prior art direct ionization proceSS using
`
`very higit-power pulses.
`
`The Applicant believes that the quasi-stationary discharge described in Mozgrin is
`formed with a prior art ionization process known as direct ionization by electron impact and
`
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`,03/14/2004 MUN 22:44 FAX 781 2‘71 152? KURT RAUSCHENBACH
`
`|ZlClIEB/OZB
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 13 of 20
`
`does not use the multi-step ionization process of the present invention. For example, the
`current and voltage characteristics (CVC) shown in FIG. 4 of Mozgrin indicate to the
`Applicant that the quasi-stationary discharge described in Mozgrin is formed by direct
`ionization. The CVC shown in FIG. 4 ofMozgrin includes four parts.
`
`Part 1 of the CVC shown in FIG. 4 of Mozgrin is a low current (0.2A) discharge
`regime that is a pro—ionization stage of the quasi-stationary discharge. The pre—ionization
`stage is generated using a high-voltage power supply unit that produces a high—voltage, low-
`current discharge between two electrodes to create a pro-ionized plasma. The pro-ionized
`plasma includes ions that are generated by a typical direct ionization process.
`
`Part 2 of the CVC shown in FIG. 4 of Mozgrin is ahigh—cunent, high-voltage
`discharge regime having a discharge current that is in the range of 0.2A-1 5A and a discharge
`voltage that is in the range of 350V-500V. The plasma discharge appears to be a typical
`magnetron plasma discharge that is commonly generated in plasma processing systems. The
`plasma discharge is formed by using a square voltage pulse. There is no description in
`Mozgrin related to Part 2 of the CVC of choosing an amplitude and a rise time ofthe voltage ,
`pulse in order to increase a rate ofexcitation of ground state atoms to create excited atoms in
`amulti-step ionization process as claimed in amended independent claim 1. In fact, there is
`no description in Mozgrin of choosing an amplitude and a rise time of a voltage pulse to
`change the plasma discharge conditions. Mozgrin describes varying the plasma discharge
`conditions by changing the pressure and magnetic field strength, but does not mention
`varying the plasma discharge conditions by changing the amplitude and the rise time ofthe
`voltage pulse. See Mozgrin page 403 lines 8-13.
`
`_
`
`Part 3 ofthe CVC shown in FIG. 4 oFMozgn'n is a high-current discharge regime in
`which the discharge voltage remains stationary at 90V over a current that is in the range of
`lSA-1,000A. Part 3 ofthe CVC corresponds to a prior art magnetron discharge for high-
`pressure (10'1 torr) plasma processing. The voltage drops sharply in this regime until the
`current reaches a quasi-stationary value that maintains the discharge power at a constant
`value. There is no description related to Part 3 of the CVC of choosing an amplitude and 3
`
`PAGE 19125 ' RCVD AT WWW-l 10:55:05 PM [Eastern DaylightTime? SVEUSPTOiFXRF-llfl‘ DNlS:3?i93fl6* CSIDITS1 271 1527 ‘ DURATION(mm-ss):03-12
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`' 06/102004 now 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`IMO/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 14 of 20
`
`rise time of a voltage pulse to increase a rate of excitation of ground state atoms to create
`
`excited atoms in a multi-step ionization process as claimed in amended independent claim 1.
`
`Part 4 of the CVC shown in FIG. 4 ofMozgt-in is a high-current, low-voltage arc
`
`discharge regime having a tsunami that is greater than IkA and a voltage that is in the range
`
`of lO—3OV. Arc diScharges are generally undesirable for most plasma processing
`
`applicatiOns. Arc discharges are observed in conventional magnetrons when too much power
`
`applied to the plasma. There is no description related to Part 4 of the CVC of choosing an
`
`amplitude and a rise time of avoltagc pulse to increase a rate of excitation of ground state
`
`atoms to create excited atoms in a multi-step ionization process as claimed in amended
`
`independent claim 1.
`
`Thus, the Applicant submits that there is no teaching or suggestion of increasing en
`
`excitation rate of ground state atoms in a weakly-ionized plasma to generate a multi—step
`
`ionization process in either Part 1, Part 2, Part 3, er Part 4 of the CVC ofMoagrin. In View
`
`of the above remarks, the Applicant respectfully submits that Mozg-rin does not describe each
`
`and every element of independent claim 1 as currently amended, either expressly or
`
`inherently. Therefore, the Applicant submits that Mozgrin does not anticipate independent
`
`claim I as currently amended. Thus, the Applicant submits that amended independent claim
`
`1 and dependent claims 4, 5, 7, I3, 14, 16, and 19 are allowable under 35 U.S.C. §102(b).
`
`lnde endent Claim 20 andD endent
`
`laim 2 -
`
`- 9
`
`2 33 and 37
`
`The Applicant believes that Mozgn'n does not describe each and every element of
`
`independent claim 20 as currently amended. Independent claim 20 is herein amended to recite
`
`the step of applying a voltage pulse to the weakly-ionized plasma where an amplitude and a rise
`
`time of the voltage pulse are chosen to increase an excitation rate of ground state atoms in the
`
`weakly—ionized plasma to create a multi-step ionization process. The multi-step ionization
`
`process includes exciting the ground state atoms to generate excited atoms, and then ionizing the
`
`excited atoms within the weakly-ionized plasma to create ions that sputter target materi al from
`
`the sputtering target.
`
`The Applicant respectfully submits that there is no description in Mozgrin of applying a
`
`PAGE 2006‘ RCVD AT 6l14l2004 10:55:05 PM [Eastern Daylight Timel’ S‘u’li:USPT0-EFXRF-ll0‘l DNISISTZQM‘ CSID:?81 271 1521* DURATION (mm-sslms-ll
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`06/14/2004 HON 22:44 FAX 7'81 271 1527 KURT RAUSCHENBACH
`
`@021/023
`
`Amendment and Response
`Applicant: Chistyakov
`SefialNo-: 101065.277
`Page 15 of 20
`
`voltage pulse to a weakly-ionized plasma where an amplitude and a rise time of the voltage pulse
`
`are chosen to increase an excitation rate of ground state atoms in the weakly-ionized plasma to
`
`create a multi-step ionization process as claimed in amended claim 20. In View of the above
`
`remarks, the Applicant respectfully submits that Mozgrin does not d