EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`
`References cited herein:
`
` U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
` U.S. Pat. No. 6,413,382 (“Wang”)
`
` A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
` D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`[1pre.] A
`magnetically
`enhanced sputtering
`source comprising:
`
`Wang in view of Kudryavtsev and Mozgrin
`
`The combination of Wang with Kudryavtsev discloses a magnetically
`enhanced sputtering source.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron.”).
`
`[1a.] an anode;
`
`The combination of Wang with Kudryavtsev discloses an anode.
`
`‘759 Patent at Fig. 1
`
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional view of a
`known magnetron sputtering apparatus having a pulsed power source.”)
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`chamber 104 proximate to the cathode assembly.”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`The combination of Wang with Kudryavtsev discloses a cathode
`assembly that is positioned adjacent to the anode, the cathode assembly
`including a sputtering target.
`
`‘759 Patent at Fig. 1
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`[1b.] a cathode
`assembly that is
`positioned adjacent
`to the anode, the
`cathode assembly
`including a
`sputtering target;
`
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional view of a
`known magnetron sputtering apparatus having a pulsed power source.”)
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly.”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`[1c.] an ionization
`
`The combination of Wang with Kudryavtsev discloses an ionization
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`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`source that
`generates a weakly-
`ionized plasma
`proximate to the
`anode and the
`cathode assembly;
`
`[1d.] a magnet that
`is positioned to
`generate a magnetic
`field proximate to
`the weakly-ionized
`plasma, the
`magnetic field
`substantially
`trapping electrons in
`the weakly-ionized
`plasma proximate to
`the sputtering target;
`and
`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`source that generates a weakly-ionized plasma proximate to the anode
`and the cathode assembly.
`
`Wang at Fig. 1.
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP)…”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs to be performed
`only once and at much lower power levels so that particulates produced
`by arcing are much reduced.”).
`
`The combination of Wang with Kudryavtsev discloses a magnet that is
`positioned to generate a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in the
`weakly-ionized plasma proximate to the sputtering target.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…” that has a magnet 126.”)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. 1] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest in
`a confinement region 142….”)
`
`Wang at Fig. 1.
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`target 14 which traps electrons from the plasma to increase the electron
`density.”)
`
`[1e.] a power supply The combination of Wang with Kudryavtsev discloses a power supply
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`
`Claims 16, 27, 32,
`33, 45 and 50
`
`generating a voltage
`pulse that produces
`an electric field
`between the cathode
`assembly and the
`anode, the power
`supply being
`configured to
`generate the voltage
`pulse with an
`amplitude and a rise
`time that increases
`an excitation rate of
`ground state atoms
`that are present in
`the weakly-ionized
`plasma to create a
`multi-step ionization
`process that
`generates a strongly-
`ionized plasma,
`which comprises
`ions that sputter
`target material, from
`the weakly-ionized
`plasma, the multi-
`step ionization
`process comprising
`exciting the ground
`state atoms to
`generate excited
`atoms, and then
`ionizing the excited
`atoms within the
`weakly-ionized
`plasma without
`forming an arc
`discharge.
`
`
`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`generating a voltage pulse that produces an electric field between the
`cathode assembly and the anode, the power supply being configured to
`generate the voltage pulse with an amplitude and a rise time that
`increases an excitation rate of ground state atoms that are present in the
`weakly-ionized plasma to create a multi-step ionization process that
`generates a strongly-ionized plasma, which comprises ions that sputter
`target material, from the weakly-ionized plasma, the multi-step
`ionization process comprising exciting the ground state atoms to
`generate excited atoms, and then ionizing the excited atoms within the
`weakly-ionized plasma without forming an arc discharge.
`
`‘759 Patent at Fig. 5
`
`Wang at Figs. 6, 7.
`
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses.”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB
`of 1 kW will typically be sufficient…”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
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`Claims 16, 27, 32,
`33, 45 and 50
`
`
`
`
`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`low-pressure background period since the small rotating SIP magnetron
`can maintain a plasma at a lower power and lower pressure than can a
`larger stationary magnetron. However, it is possible to combine highly
`ionized sputtering during the pulses With significant neutral sputtering
`during the back ground period.”).
`
`Wang at 7:3-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber.”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed only
`once and at much lower power levels so that particulates produced by
`arcing are much reduced.”).
`
`Wang at 7:13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6… As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform…”).
`
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this work
`are characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”)
`
`Kudryavtsev at Fig. 1
`
`Kudryavtsev at Fig. 6
`
`
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`
`
`
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents in
`terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures… [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e.g.,
`increase the pulse length and/or pressure, so as to trigger Kudryavtsev’s
`fast stage of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization in Wang so as
`to increase plasma density and thereby increase the sputtering rate.
`
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`16. The sputtering
`source of claim 1
`wherein the
`ionization source
`comprises an AC
`power supply that
`generates an electric
`field proximate to
`the anode and the
`cathode assembly.
`
`Further, use of Kudryavtsev’s fast stage in Wang would have been a
`combination of old elements that yielded predictable results of
`increasing plasma density and multi-step ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`The combination of Wang, Kudryavtsev and Mozgrin discloses the
`ionization source comprises an AC power supply that generates an
`electric field proximate to the anode and the cathode assembly.
`
`See evidence cited in claim 1.
`
`Wang at 7:57-59 (“A variable DC power supply 100 [being] connected
`to the target 14.”).
`
`Wang at 8:2-5 (“Advantageously, the plasma may be ignited by the DC
`power supply 100 before the pulsed power supply 80 is even turned
`on…”).
`
`Mozgrin at 401, left col, ¶ 4 (“The pre-ionization could be provided by
`RF discharge…”).
`
`It would have been obvious for a person of ordinary skill to replace
`Wang’s variable DC power supply with an AC power supply. AC
`power supplies are commonly used power sources for generating
`plasma for sputtering.
`
`It would have been obvious for one of ordinary skill to use Mozgrin’s
`AC supply in Wang. Such a combination would be a combination of
`old elements in which each element provided its expected function.
`Also, Wang and Mozgrin provide similar disclosures. Both relate to
`sputtering and methods of generating pulsed plasmas for sputtering.
`Further, Wang and Mozgrin both teach generating weakly-ionized and
`strongly-ionized plasmas.
`
`[20pre.] A method
`
`The combination of Wang and Kudryavtsev discloses a method of
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`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`of generating
`sputtering flux, the
`method comprising:
`
`[20a.] ionizing a
`feed gas to generate
`a weakly-ionized
`plasma proximate to
`a sputtering target;
`
`[20b.] generating a
`magnetic field
`proximate to the
`weakly-ionized
`plasma, the
`magnetic field
`substantially
`trapping electrons in
`the weakly-ionized
`plasma proximate to
`the sputtering target;
`and
`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`generating sputtering flux.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron.”).
`
`The combination of Wang and Kudryavtsev discloses ionizing a feed
`gas to generate a weakly-ionized plasma proximate to a sputtering
`target.
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is supplied from a
`gas source 32….”).
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is supplied
`to the processing space 22….”).
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP)…”)
`
`The combination of Wang and Kudryavtsev discloses generating a
`magnetic field proximate to the weakly-ionized plasma, the magnetic
`field substantially trapping electrons in the weakly-ionized plasma
`proximate to the sputtering target.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…” that has a magnet 126.”)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. 1] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest in
`a confinement region 142….”)
`
`Wang at Fig. 1.
`
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`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`[20c.] applying a
`voltage pulse to the
`weakly-ionized
`plasma, an
`amplitude and a rise
`time of the voltage
`pulse being chosen
`to increase an
`excitation rate of
`ground state atoms
`that are present in
`the weakly-ionized
`plasma to create a
`multi-step ionization
`process that
`generates a strongly-
`ionized plasma,
`which comprises
`ions that sputter
`target material, from
`the weakly-ionized
`plasma, the multi-
`step ionization
`process comprising
`exciting the ground
`state atoms to
`generate excited
`atoms, and then
`ionizing the excited
`atoms within the
`weakly-ionized
`plasma without
`forming an arc
`discharge.
`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`target 14 which traps electrons from the plasma to increase the electron
`density.”)
`The combination of Wang and Kudryavtsev discloses applying a
`voltage pulse to the weakly-ionized plasma, an amplitude and a rise
`time of the voltage pulse being chosen to increase an excitation rate of
`ground state atoms that are present in the weakly-ionized plasma to
`create a multi-step ionization process that generates a strongly-ionized
`plasma, which comprises ions that sputter target material, from the
`weakly-ionized plasma, the multi-step ionization process comprising
`exciting the ground state atoms to generate excited atoms, and then
`ionizing the excited atoms within the weakly-ionized plasma without
`forming an arc discharge.
`
`‘759 Patent at Fig. 5
`Wang at Figs. 6, 7.
`
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses.”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`of 1 kW will typically be sufficient…”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP magnetron
`can maintain a plasma at a lower power and lower pressure than can a
`larger stationary magnetron. However, it is possible to combine highly
`ionized sputtering during the pulses With significant neutral sputtering
`during the back ground period.”).
`
`Wang at 7:3-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber.”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed only
`once and at much lower power levels so that particulates produced by
`arcing are much reduced.”).
`
`Wang at 7:13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6… As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform…”).
`
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this work
`are characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”)
`
`Kudryavtsev at Fig. 1
`
`
`Kudryavtsev at Fig. 6
`
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`
`
`
`
`
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents in
`terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures… [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e.g.,
`increase the pulse length and/or pressure, so as to trigger Kudryavtsev’s
`fast stage of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization in Wang so as
`to increase plasma density and thereby increase the sputtering rate.
`
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`23. The method of
`claim 20 wherein
`the applying the
`electric field
`comprises applying
`an electrical pulse
`across the weakly-
`ionized plasma.
`
`27. The method of
`claim 23 wherein
`the electrical pulse
`comprises a pulse
`having a current
`density that is
`greater than 1
`A/cm2.
`
`Further, use of Kudryavtsev’s fast stage in Wang would have been a
`combination of old elements that yielded predictable results of
`increasing plasma density and multi-step ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`The combination of Wang and Kudryavtsev discloses applying the
`electric field comprises applying an electrical pulse across the weakly-
`ionized plasma.
`
`See evidence cited in claim 20.
`
`Wang at Figs. 6, 7
`
`Wang at 7:61-63 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses…”)
`
`The combination of Wang, Kudryavtsev and Mozgrin discloses the
`electrical pulse comprises a pulse having a current density that is
`greater than 1 A/cm2.
`
`See evidence cited in claim 23.
`
`Wang at Fig. 1.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW will
`typically be sufficient to support a plasma with the torpedo magnetron
`and a 200 mm wafer…”).
`
`At a power of 1 MW, a voltage below 3,184 Volts will produce a
`current density that is greater than the claimed 1 A/cm2 in HDP region
`42 (assuming that it has the same area as Wang’s 200 mm wafer). The
`area of a 200 mm wafer is 314 cm2 (i.e., The radius R of a 200 mm
`wafer is 100 mm, or 10 cm; Area = π R2 = 3.14 x (10 cm)2 = 314 cm2).
`
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`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`If the area of HDP region 42 is identical to that of the 200 mm wafer,
`and the current density is 1 A/cm2, then the total current flowing
`through HDP region is 314 Amps (i.e., (1 A/cm2) x (314 cm2) = 314
`Amps). At a power of 1 MW, any voltage below 3,184 V will produce
`a current greater than 314 Amps (and therefore a current density higher
`than 1 A/cm2). For example, if the voltage were 3,000 V at a power of
`1 MW, the total current through HDP region 42 would be 333 Amps,
`which is higher than the 314 Amps required to produce the claimed
`current density.
`
`Conventional sputtering systems like those disclosed in Wang do not
`use such high voltages. Wang discloses a range of -300 to -700 Volts
`for supporting the plasma. Wang at 4:13-15 (“A DC magnetron sputter
`reactor conventionally biases the target 14 to between about -300 to -
`700 VDC to support a plasma of the argon working gas.”). Wang
`would also use voltages in this range for production of the peak power,
`PP, and sputtering. Mozgrin used similar voltages for sputtering. See,
`e.g., Mozgrin at Fig. 7, which shows voltages between 500-1,000 Volts
`for Mozgrin’s sputtering region 2.
`
`The combination of Wang, Kudryavtsev and Mozgrin discloses the
`peak plasma density of the weakly-ionized plasma is less than about
`1012 cm-3.
`
`See evidence cited in claim 20.
`
`Wang at Fig. 6
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Mozgrin at 401, right col, ¶2 (“..the initial plasma density in the 109-
`1011 cm-3 range.”)
`
`If Wang’s plasma densities were different than those identified in
`Mozgrin, one of ordinary skill would have been motivated to adjust
`
`32. The method of
`claim 20 wherein
`the peak plasma
`density of the
`weakly-ionized
`plasma is less than
`about 1012 cm-3.
`
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`

`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`Wang’s power levels so as to use Mozgrin’s plasma densities. Mozgrin
`specifically notes that “the initial plasma density in the 109 – 1011 cm-3
`range. This initial density was sufficient for plasma density to grow
`when the square voltage pulse was applied to the gap. So we chose
`these regimes as pre-ionization regimes.” Mozgrin at 401, right col, ¶
`2. Accordingly, in order to allow the plasma density to further grow
`upon application of subsequent pulses, one of ordinary skill reading
`Wang would have been motivated to achieve the plasma density in the
`109 – 1011 cm-3 range.
`
`The combination of Wang, Kudryavtsev and Mozgrin discloses the
`peak plasma density of the strongly-ionized plasma is greater than
`about 1012 cm-3.
`
`See evidence cited in claim 20.
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Mozgrin at 403, right col, ¶4 (“Regime 2 was characterized by intense
`cathode sputtering…)
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-current
`magnetron discharge (regime 2) in sputtering … plasma density
`(exceeding 2x1013 cm-3).”)
`
`If Wang’s plasma densities were different than those identified in
`Mozgrin, one of ordinary skill would have been motivated to adjust
`Wang’s power levels so as to use Mozgrin’s plasma densities. As
`taught in both Wang and Mozgrin, high plasma density is desirable
`because it results in a high sputtering rate, which in turn increases the
`deposition rate of the sputtered material.
`
`The combination of Wang, Kudryavtsev and Mozgrin discloses the
`amplitude of the voltage pulse is approximately between 100V and 30
`
`14
`
`33. The method of
`claim 20 wherein
`the peak plasma
`density of the
`strongly-ionized
`plasma is greater
`than about 1012 cm-3.
`
`45. The sputtering
`source of claim 1
`wherein the
`
`ActiveUS 122345138v.1
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`

`
`EXHIBIT A.09
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Mozgrin
`
`kV.
`
`See evidence cited in claim 1.
`
`Wang at 4:13-15 (“A DC magnetron sputter reactor conventionally
`biases the target 14 to between about -300 to -700 VDC to support a
`plasma of the argon working gas.”).
`
`Mozgrin at Fig. 7.
`
`A person of ordinary skill would expect Wang’s voltage pulse to have
`an amplitude similar to Mozgrin’s. In particular, Mozgrin’s pulse
`produces the region 2 plasma, which Mozgrin uses for sputtering, and
`as shown in Fig. 7, Mozgrin’s voltage pulse was in the range of 500-
`1000 Volts. Mozgrin at 403, right col, ¶4 (“Regime 2 was
`characterized by intense cathode sputtering…). If Wang’s voltage
`amplitude, and hence, the plasma densities were different than those
`identified in Mozgrin, one of ordinary skill would have been motivated
`to adjust Wang’s levels so as to use Mozgrin’s voltage amplitude and
`plasma densities so as to achieve a desired level of sputtering.
`
`The combination of Wang and Kudryavtsev discloses the amplitude of
`the voltage pulse is approximately between 100V and 30 kV.
`
`See evidence cited in claim 20.
`
`See evidence cited in claim 45.
`
`Claims 16, 27, 32,
`33, 45 and 50
`
`amplitude of the
`voltage pulse is
`approximately
`between 100V and
`30 kV.
`
`50. The method of
`claim 20 wherein
`the amplitude of the
`voltage pulse is
`approximately
`between 100V and
`30 kV.
`
`
`
`
`
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