Express Mail Label No. ED475251670US
`
` IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`Attorney Docket No.: ZON-001
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`PATENT
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`APPLICANTS:
`
`Chistyakov
`
`SERIAL NO.:
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`10/065,277
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`GROUP NO.:
`
`1753
`
`FILING DATE:
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`September 30, 2002
`
`EXAMINER:
`
`Rodney G. McDonald
`
`TITLE:
`
`High-Power Pulsed Magnetron Sputtering
`
`Mail Stop RCE
`Commissioner of Patents
`
`P.O. Box 1450
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`Alexandria, Virginia 22313-1450
`
`Sir:
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`RESPONSE FOR RCE
`
`The following remarks are responsive to the final Office Action mailed on May 27, 2005
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`in the above-identified patent application. Consideration of the following remarks, and
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`allowance of the claims, as presented, is respectfully requested. A request for continued
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`examination (RCE) and a Petition for a two—month extension of time, up to and including
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`October 27, 2005 are submitted herewith. The Commissioner is hereby authorized to charge the
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`RCE fee, the extension fee and any other proper fees to Attorney's Deposit Account No. 501211.
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`Please consider the remarks that follow.
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`GILLETTE 1111
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`GILLETTE 1111
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`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 2 of 18
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`Pending Claims:
`
`(previously presented) A magnetically enhanced sputtering source comprising:
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly-ionized plasma proximate to the
`
`anode and the cathode assembly;
`
`<1)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plasma, the magnetic field substantially trapping electrons in the weakly-
`
`ionized plasma proximate to the sputtering target; and
`
`a power supply generating a voltage pulse that produces an electric field between
`
`the cathode assembly and the anode, an amplitude and a rise time of the voltage
`
`pulse being chosen to increase an excitation rate of ground state atoms that are
`
`present in the weakly-ionized plasma to create a multi-step ionization process that
`
`generates a strongly-ionized plasma from the weakly-ionized plasma, the multi-
`
`step ionization process comprising exciting the ground state atoms to generate
`
`excited atoms, and then ionizing the excited atoms within the weakly-ionized
`
`plasma to create ions that sputter target material from the sputtering target.
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
`3.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant voltage.
`
`4.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a quasi-
`
`static electric field.
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`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 3 of 18
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`5.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(previously presented) The sputtering source of claim 1 wherein the rise time of the
`
`voltage pulse is chosen to increase the ionization rate of the excited atoms in the weakly-
`
`ionized plasma.
`
`(previously presented) The sputtering source of claim 1 wherein the weakly-ionized
`
`plasma reduces the probability of developing an electrical breakdown condition between
`
`the anode and the cathode assembly.
`
`(original) The sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma impact the surface of the sputtering target in a manner that causes substantially
`
`uniform erosion of the sputtering target.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`ll.
`
`12.
`
`13.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of the sputtering flux.
`
`(original) The sputtering source of claim 10 further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`(original) The sputtering source of claim 10 further comprising a bias voltage power
`
`supply that applies a bias voltage to a substrate that is positioned on the substrate support.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`14.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
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`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 4 of 18
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`15.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
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`power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`16.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`17.
`
`18.
`
`19.
`
`(original) The sputtering source of claim 1 wherein the ionization source is chosen from
`
`the group comprising a UV source, an X-ray source, an electron beam source, and an ion
`
`beam source.
`
`(original) The sputtering source of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`(original) The sputtering source of claim 1 wherein the sputtering target is formed of a
`
`material chosen from the group comprising a metallic material, a polymer material, a
`
`superconductive material, a magnetic material, a non-magnetic material, a conductive
`
`material, a non-conductive material, a composite material, a reactive material, and a
`
`refractory material.
`
`20.
`
`(previously presented) A method of generating sputtering flux, the method comprising:
`
`a)
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
`b)
`
`generating a magnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target; and
`
`c)
`
`applying a voltage pulse to the weakly-ionized plasma, an amplitude and a rise
`
`time of the voltage pulse being chosen to increase an excitation rate of ground
`
`state atoms that are present in the weakly-ionized plasma to create a multi-step
`
`ionization process that generates a strongly-ionized plasma from the weakly-
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 5 of 18
`
`ionized plasma, the multi-step ionization process comprising exciting the ground
`
`state atoms to generate excited atoms, and then ionizing the excited atoms within
`
`the weakly-ionized plasma to sputter target material from the sputtering target.
`
`21.
`
`(original) The method of claim 20 wherein the applying the electric field comprises a
`
`applying a quasi-static electric field.
`
`22.
`
`23.
`
`24.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the weakly-ionized plasma.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`25.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that reduces a probability of
`
`developing an electrical breakdown condition proximate to the sputtering target.
`
`26.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface of the sputtering target.
`
`27.
`
`28.
`
`29.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a current density that is greater than 1A/cmz.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse train
`
`having a repetition rate that is substantially between 0.1Hz and 1kHz.
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 6 of 18
`
`30.
`
`31.
`
`32.
`
`(original) The method of claim 20 wherein the ions in the strongly-ionized plasma
`
`impact the surface of the sputtering target in a substantially uniform manner.
`
`(original) The method of claim 20 wherein the strongly-ionized plasma is substantially
`
`uniform proximate to the sputtering target.
`
`(original) The method of claim 20 wherein the peak plasma density of the weakly-
`
`ionized plasma is less than about 1012 cm3.
`
`33.
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`
`ionized plasma is greater than about 1012 cm3.
`
`34.
`
`(Previously Presented) The method of claim 20 further comprising forming a film on a
`
`surface of a substrate from the material sputtered from the sputtering target.
`
`35.
`
`(original) The method of claim 34 further comprising controlling a temperature of the
`
`film.
`
`36.
`
`37.
`
`38.
`
`(original) The method of claim 34 further comprising applying a bias voltage to the film.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to an electric field.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to an electrode that is adapted to emit electrons.
`
`39.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`
`an ion beam source.
`
`40.
`
`(previously presented) A magnetically enhanced sputtering source comprising:
`
`a)
`
`means for ionizing a feed gas to generate a weakly-ionized plasma proximate to a
`
`sputtering target;
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 7 of 18
`
`b)
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`
`the magnetic field substantially trapping electrons in the weakly-ionized plasma
`
`proximate to the sputtering target; and
`
`c)
`
`means for applying a voltage pulse to the weakly-ionized plasma, an amplitude
`
`and a rise time of the voltage pulse being chosen to increase an- excitation rate of
`
`ground state atoms that are present in the weakly-ionized plasma to create a multi-
`
`step ionization process that generates a strongly-ionized plasma from the weakly-
`
`ionized plasma, the multi-step ionization process comprising exciting the ground
`
`state atoms to generate excited atoms, and then ionizing the excited atoms within
`
`the weakly-ionized plasma to ions that sputter target material from the sputtering
`
`target.
`
`41.
`
`42.
`
`(previously presented) The sputtering source of claim 1 wherein the cathode assembly
`
`and the anode are positioned so as to form a gap therebetween.
`
`(previously presented) The sputtering source of claim 1 wherein the weakly-ionized
`
`plasma is generated from a feed gas that comprises the ground state atoms.
`
`43.
`
`(previously presented) The sputtering source of claim 1 wherein the excited atoms within
`
`the weakly-ionized plasma are ionized by electrons to create the ions that sputter material
`
`from the sputtering target.
`
`44.
`
`(previously presented) The sputtering source of claim 1 wherein the rise time of the
`
`voltage pulse is approximately between 0.01 and 100V/usec.
`
`45.
`
`(previously presented) The sputtering source of claim 1 wherein the amplitude of the
`
`voltage pulse is approximately between 100V and 30kV.
`
`46.
`
`47.
`
`(previously presented) The method of claim 20 wherein the weakly-ionized plasma is
`
`generated from a feed gas that comprises the ground state atoms.
`
`(previously presented) The method of claim 20 wherein a duration of the weakly-ionized
`
`plasma is approximately between one microsecond and one hundred seconds.
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 8 of 18
`
`48.
`
`(previously presented) The method of claim 20 wherein the ionizing the excited atoms
`
`within the weakly-ionized plasma to create ions that sputter material from the sputtering
`
`target comprises ionizing the excited atoms with electrons.
`
`49.
`
`(previously presented) The method of claim 20 wherein the rise time of the voltage pulse
`
`is approximately between 0.01 and 100V/usec.
`
`50.
`
`(previously presented) The method of claim 20 wherein the amplitude of the voltage
`
`pulse is approximately between 100V and 30kV.
`
`J
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 9 of 18
`
`REMARKS
`
`Provisional Non-Statutory Double Patenting Rejections
`
`The Applicant acknowledges with appreciation the statement on page 10 of the
`
`Office Action dated May 27, 2005 that the obviousness-type double patenting rejection is
`
`OVCFCOITIC.
`
`Rejections under 35 U.S.C. §102§b) As Being Anticipated by Kouznetsov
`
`Claims 1, 5-10, 13-14, 16, 19-20, 22-31, 34, 37-38, and 40-50 are rejected under 35
`
`U.S.C. §l02(b) as being anticipated by Kouznetsov (W098/40532) (hereinafter “Kouznetsov”).
`
`The Applicant respectfully traverses this rejected under 35 U.S.C. §102(b).
`
`To anticipate a claim under 35 U.S.C. §l02, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10, 13, 14, 16, and 19
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 1 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 1 recites a magnetically enhanced sputtering source having a power
`
`supply that generates a voltage pulse that produces an electric field between the cathode
`
`assembly and the anode. The voltage pulse generated by the power supply comprises an
`
`amplitude and a rise time that are chosen to increase an excitation rate of ground state atoms that
`
`are present in the weakly-ionized plasma to create a multi-step ionization process that generates
`
`a strongly-ionized plasma from the weakly-ionized plasma.
`
`The Applicant submits that there is no description in Kouznetsov of the power supply
`
`claimed in independent claim 1. Specifically, the Applicant submits that there is no description
`
`in Kouznetsov of choosing the amplitude and the rise time of the voltage pulse generated by the
`
`

`
`. Amendment and Response for RCE .
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 10 of 18
`
`power supply to increase the excitation rate of ground state atoms that are present in the weakly-
`
`ionized plasma to generate a multi-step ionization process as claimed in independent claim 1.
`
`The multi-step ionization process claimed in independent claim 1, and described in
`
`paragraphs 63-67 of the present application, requires energies at the atomic level that are
`
`different from the energies at the atomic level that are required to achieve the direct ionization
`
`process that is used to generated plasmas in the apparatus described in Kouznetsov. As
`
`described in paragraph 63 of the specification of the present application, an argon atom requires
`
`an energy of about 1l.55eV at the atomic level to become excited. The excited atoms then
`
`require about 4eV of energy at the atomic level to ionize. In contrast, neutral argon atoms
`
`ionized by direct ionization require about l5.76eV of energy at the atomic level.
`
`Independent claim 1 recites that an amplitude and a rise time of the voltage pulse are
`
`specifically chosen to increase an excitation rate of ground state atoms that are present in the
`
`weakly-ionized plasma to create a multi-step ionization process at the atomic level that generates
`
`a strongly-ionized plasma from the weakly-ionized plasma. For the example given in the
`
`specification, the amplitude and rise time are chosen to result in an 11.55eV increase in energy
`
`compared with a l5.76eV increase in energy at the atomic level that would be required to ionize
`
`neutral argon atoms by direct ionization.
`
`The Examiner states on page 10 of the Office Action dated May 27, 2005 that
`
`Kouznetsov suggests that as the voltage in the pulse described in Kouznetsov increases, the gas
`
`will undergo various ionizations and excited states until being fully ionized. The Applicant
`
`respectfully requests that the Examiner provide a reference to the text in Kouznetsov that
`
`describes these various ionizations and excited states. The Applicant believes that the Examiner
`
`may be referring to Kouznetsov, page 9, lines 21-25, that describes the generation of partially
`
`ionized and more fully ionized plasmas. The terms “partial ionization” and “more ionized” as
`
`used in Kouznetsov refer to the state of the plasma macroscopically and not to any particular
`
`ionization process at the atomic level, which is used to generate the ions in the plasmas. That is,
`
`a “partially ionized” plasma has some ionized ground state atoms and many neutral ground state
`
`atoms. A “more ionized” plasma has more ionized ground state atoms and less neutral ground
`
`state atoms compared with the “partially ionized” plasma. The Applicant submits that the
`
`

`
`. Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 11 of l8
`
`macroscopic state of ionization (i.e. “partially ionized” or “more ionized”) does not imply
`
`anything about the particular ionization process at the atomic level that is used to ionize the
`
`ground state atoms to form the “partially ionized” or “more ionized” plasma.
`
`The Applicant strongly believes that the “partially ionized” or “more ionized” plasma
`
`described in Kouznetsov is created by direct ionization or atomic ionization by electron impact
`
`(hereinafter “direct ionization”) that is used in most known plasma generators. See, for example,
`
`paragraphs 27-29 of the present specification for a description of direct ionization. According to
`
`Kouznetsov, the pulsed power source used in the Kouznetsov apparatus provides “pulses in such
`
`a way, i.e. that so much power is developed in each pulse, that in the application of such a pulse,
`
`for a very short time during the start of the pulse, the state of the gas located at the region in
`
`which the electrons are trapped by the magnetic field will very rapidly reach a fully ionized
`
`state. . .” See, for example, Kouznetsov page 5, lines 14.
`
`Thus, Kouznetsov describes a power supply that generates a pulse having a large voltage
`
`(2,000 Volts) in a very short time duration so that the gas very rapidly reaches a fully ionized
`
`state. The Applicant submits that one skilled in the art will appreciate that the application of a
`
`very large voltage pulse in a very short time duration will ionize the gas by direct ionization with
`
`electrons located in the region having crossed electric and magnetic fields. See, for example,
`
`Kouznetsov page 12, lines 22-26.
`
`Furthermore, the Applicant submits that one skilled in the art will appreciate that if any
`
`multi-step ionization is occurring in plasmas generated using the power supply described in
`
`Kouznetsov, that such ionization will be statistically insignificant. Therefore, the Applicant
`
`submits that Kouznetsov does not describe the power supply claimed in independent claim 1.
`
`In View of the above remarks, the Applicant respectfully submits that Kouznetsov does
`
`not describe each and every element of independent claim 1, either expressly or inherently.
`
`Therefore, the Applicant submits that Kouznetsov does not anticipate independent claim 1 under
`
`35 U.S.C. §102(b). Thus, the Applicant submits that independent claim 1 is allowable. The
`
`Applicant also submits that dependent claims 5-10, 13, 14, 16, and 19 are allowable as
`
`depending from an allowable base claim.
`
`

`
`‘ Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 12 of 18
`
`Independent Claim 20 and Dependent Claims 22-31, 34, and 37-38
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 20 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 20 recites the step of applying a voltage pulse to the weakly-ionized
`
`plasma. An amplitude and a rise time of the voltage pulse are chosen to increase an excitation
`
`rate of ground state atoms in the weakly-ionized plasma to create a multi-step ionization process.
`
`The multi-step ionization process generates excited atoms from ground state atoms in the
`
`weakly-ionized plasma, and then ionizes the excited atoms in the weakly-ionized plasma.
`
`The Applicant submits that there is no description in Kouznetsov of the method of
`
`generating a strongly-ionized plasma using a multi—step ionization process as claimed in
`
`independent claim 20. As described in connection with the rejection of independent claim 1
`
`under 35 U.S.C. §102(b), Kouznetsov describes a power supply that generates a pulse having a
`
`large voltage (2,000 Volts) in a very short time duration so that the gas very rapidly reaches a
`
`fully ionized state. The Applicant submits that one skilled in the art will appreciate that the
`
`application of a very large voltage pulse in a very short time duration will ionize the gas by
`
`direct ionization. Furthermore, the Applicant believes that if any multi-step ionization is
`
`occurring in plasma generated using the method described in Kouznetsov, that such ionization
`
`will be statistically insignificant.
`
`In view of the above remarks, the Applicant respectfully submits that Kouznetsov
`
`does not describe each and every element of independent claim 20. Therefore, the Applicant
`
`submits that -Kouznetsov does not anticipate independent claim 20. Thus, the Applicant
`
`submits that independent claim 20 and dependent claims 22-31, 34, 37, and 38 are allowable
`
`under 35 U.S.C. §102(b).
`
`Independent Claim 40 and Dependent Claims 41-50
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 40 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 40 recites a means for applying a voltage pulse to a weakly-ionized
`
`plasma. An amplitude and a rise time of the voltage pulse is chosen to increase an excitation rate
`
`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.‘: 10/065,277
`Page 13 of 18
`
`of ground state atoms that are present in the weakly-ionized plasma to create a multi-step
`
`ionization process that generates a strongly-ionized plasma from the weakly-ionized plasma.
`
`Also, the multi-step ionization process comprises exciting the ground state atoms to generate
`
`excited atoms, and then ionizing the excited atoms within the weakly-ionized plasma to ions that
`
`sputter target material from the sputtering target.
`
`The Applicant submits that there is no description in Kouznetsov of the means for
`
`applying a voltage pulse to the weakly-ionized plasma as claimed in independent claim 40. As
`
`described in connection with the rejection of independent claim 1 under 35 U.S.C. §102(b),
`
`Kouznetsov describes a power supply that generates a pulse having a large voltage (2,000 Volts)
`
`in a very short time duration so that the gas very rapidly reaches a fully ionized state. The
`
`Applicant submits that one skilled in the art will appreciate that the application of a very large
`
`voltage pulse in a very short time duration will ionize the gas by direct ionization. Furthermore,
`
`the Applicant believes that if any multi-step ionization is occurring in plasma generated using the
`
`method described in Kouznetsov, that such ionization will be statistically insignificant.
`
`In View of the above remarks, the Applicant respectfully submits that Kouznetsov
`
`does not describe each and every element of independent claim 40. Therefore, the Applicant
`
`submits that Kouznetsov does not anticipate independent claim 40. Thus, the Applicant
`
`submits that independent claim 40 and dependent claims 41-50 are allowable under 35
`
`U.S.C. §102(b).
`
`Reiections under 35 U.S.C. §102(b) as Being Anticipated by Mozgrin
`
`Claims 1, 4-5, 7, 13-14, 16, 19-25, 27-29, 32-33, 37, and 40 are rejected under 35 U.S.C.
`
`§lO2(b) as being anticipated by Mozgrin et al. entitled “High Current Low-Pressure Quasi-
`
`Stationary Discharge in a Magnetic Field: Experimental Research”, Plasma Physics Reports,
`
`Vol. 21, No. 5, 1995, pp. 400-409 (hereinafter “Mozgrin”). The Applicant respectfiilly traverses
`
`this rejected under 35 U.S.C. §102(b).
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`

`
`I Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.2 10/065,277
`Page 14 of 18
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 4-5, 7, 13-14, 16, and 19
`
`The Applicant respectfully submits that Mozgrin does not describe each and every
`
`element of independent claim 1 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 1 recites a magnetically enhanced sputtering source having a power
`
`supply that generates a voltage pulse that produces an electric field between the cathode
`
`assembly and the anode. The voltage pulse generated by the power supply comprises an
`
`amplitude and a rise time that is chosen to increase an excitation rate of ground state atoms that
`
`are present in the weakly—ionized plasma to create a multi-step ionization process that generates
`
`a strongly-ionized plasma from the weakly—ionized plasma.
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`The Applicant submits that there is no description in Mozgrin of the power supply
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`claimed in independent claim 1. Specifically, there is no description in Mozgrin of a power
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`supply that generates a voltage pulse having an amplitude and a rise time that are chosen to
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`increase the excitation rate of ground state atoms present in the weakly-ionized plasma to
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`create a multi-step ionization process.
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`The Examiner states in the Office Action dated May 27, 2005 that the discharge
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`system described in Mozgrin includes a cathode, an anode, a magnetic system, and a system
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`for pre—ionization that creates a pre—ionized plasma. The Applicant submits that merely
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`describing a power supply that can generated a pre-ionized plasma does not teach generating
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`pulses with amplitudes and rise times that are chosen to achieve particular ionization
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`characteristics, such as generating a multi-step ionization process, as claimed in independent
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`claim 1, and as described in the specification. See, for example, paragraphs 63-67 of the
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`present application for a description of multi-step ionization.
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`The Applicant submits that the term “pre~ionization” does not imply anything about the
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`particular ionization process at the atomic level, which is used to ionize the ground state atoms to
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`form the “pre-ionized” plasma at the macroscopic level. Furthermore, the term “pre-ionization”
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`certainly does not imply that a multi-step ionization process is occurring at the atomic level, as
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`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 15 of 18
`
`described in the present application, is used to generate the discharge. The Applicant strongly
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`believes that the “pre-ionized” plasma described in Mozgrin is created by direct ionization or
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`atomic ionization by electron impact (hereinafter “direct ionization”) that is used in most known
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`plasma generators. See, for example, paragraphs 27-29 of the present specification for a
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`description of direct ionization.
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`The Applicant has previously submitted, in the Response filed on February 24, 2005, a
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`detailed analysis of the current and voltage characteristics (CVC) shown in FIG. 4 of Mozgrin.
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`The analysis concluded that ions are generated by direct ionization in all four parts of the CVC
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`and that any ions generated in these four parts of the CVC by a multi-step ionization process at
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`the atomic level will be statistically insignificant. Furthermore, there is no description related to
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`any part of the CVC of choosing an amplitude and a rise time as claimed in independent claim 1.
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`In contrast, Mozgrin describes varying the plasma discharge conditions by changing the pressure
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`and magnetic field strength. See Mozgrin page 403 lines 8-13.
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`Thus, the Applicant submits that direct ionization is used to generate the quasi-
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`stationary discharge described in Mozgrin. As described in connection with the 35 U.S.C.
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`§102(b)Kouznetsov rejection, the energies required to achieve the multi-step ionization
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`process claimed in independent claim 1 are different from the energies required to achieve
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`direct ionization. Therefore, Mozgrin does not describe choosing an amplitude and a rise
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`time to increase an excitation rate of ground state atoms that are present in the weakly-
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`ionized plasma to create a multi-step ionization process that generates a strongly-ionized
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`plasma from the weakly-ionized plasma as described in independent claim 1.
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`In view of the above remarks, the Applicant respectfully submits that Mozgrin does
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`not describe each and every element of independent claim 1, either expressly or inherently.
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`Therefore, the Applicant submits that Mozgrin does not anticipate independent claim 1.
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`Thus, the Applicant submits that independent claim 1 and dependent claims 4-5, 7, 13-14, 16,
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`and 19 are allowable under 35 U.S.C. §102(b).
`
`Independent Claim 20 and Dependent Claims 21-25, 27-29, 32, 33, and 37
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`The Applicant believes that Mozgrin does not describe each and every element of
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`

`
`Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.2 10/065,277
`Page 16 of 18
`
`independent claim 20 as amended in the Response to Office Action dated June 14, 2004.
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`Independent claim 20 recites the step of applying a voltage pulse to the weakly-ionized plasma.
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`An amplitude and a rise time of the voltage pulse are chosen to increase an excitation rate of
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`ground state atoms in the weakly-ionized plasma to create a multi-step ionization process. The
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`multi-step ionization process generates excited atoms from ground state atoms in the weakly-
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`ionized plasma, and then ionizes the excited atoms in the weakly-ionized plasma.
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`The Applicant submits that there is no description in Mozgrin of the method of
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`generating a strongly—ionized plasma using a multi-step ionization process as claimed in
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`independent claim 20. As described in connection with the rejection of independent claim 1
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`under 35 U.S.C. §l02(b), the Applicant respectfully submits that the ionization described in
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`Mozgrin is direct ionization and there is no description of choosing an amplitude and a rise time
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`as claimed in independent claim 20.
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`In view of the above remarks, the Applicant respectfully submits that Mozgrin does not
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`describe each and every element of independent claim 20, either expressly or inherently.
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`Therefore, the Applicant submits that Mozgrin does not anticipate independent claim 20 and
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`dependent claims 21-25, 27-29, 32, 33, and 37 under 35 U.S.C. §l02(b). Thus, the Applicant
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`submits that independent claim 20 and dependent claims 21-25, 27-29, 32, 33, and 37 are
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`allowable.
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`Independent Claim 40
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`The Applicant respectfully submits that Mozgrin does not describe each and every
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`element of independent claim 40 as amended in the Response to Office Action dated June 14,
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`2004. Independent claim 40 recites a means for applying a voltage pulse to a weakly-ionized
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`plasma. An amplitude and a rise time of the voltage pulse is chosen to increase an excitation rate
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`of ground state atoms that are present in the weakly-ionized plasma to create a multi-step
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`ionization process that generates a strongly—ionized plasma from the weakly-ionized plasma.
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`Also, the multi-step ionization process comprises exciting the ground state atoms to generate
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`excited atoms, and then ionizing the excited atoms within the weakly-ionized plasma to ions that
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`sputter target material from the sputtering target.
`
`

`
`‘ Amendment and Response for RCE
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 17 of 18
`
`The Applicant submits that there is no description in Mozgrin of the means for applying a
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`voltage pulse to the weakly-ionized plasma where an amplitude and a rise time of