08/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`I 4
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`006/028
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`RECEIVED
`cement FAX CENTER
`
`Attorney Docket No.-. ZON-001
`
`PATENT
`
`Hi-!:rJ\ln
`ii Ilbiltf \l.._'-‘I
`
`ii
`
`-
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL N0;
`FILING DATE:
`TITLE:
`
`1753
`GROUP NO.:
`10/065,277
`McDonald, Rodney G.
`EXAMINER:
`September 30, 2002
`HIGH-POWER PULSED MAGNETRON SPUTFERTNG
`
`Commissioner for Patents
`Alexandria, Virginia 22313-1450
`
`AMENDMENT AND RESPONSE
`
`Sir:
`
`The following amendments and remarks are responsive to the Office Action mailed on
`January 15, 2004 in the above-identified patent application. Entry and consideration of the
`following amendments and remarks, and allowance ofthe claims, as presented, are respeotfully_
`requested. A Petition for a two—month extension oftime, up to and including Tuesday, June 15,
`2004 is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`the additional claims fee, and any other proper fees to Attorney's Deposit Account No. 501211.
`
`Please enter the following amendments and consider the remarks that follow.
`
`PAGE U26* RCVDAT 511412004 10:56:05 PM [EasternDaylightTime]* SVR:USPTO-EFXRF-1l0‘ DNiS:l729305*CSlD:781 271 1527"DURATION (mm-ss):08-12
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`GILLETTE 1107
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`08/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACI-I
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`007/025
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10I065.,739
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 4, 5, 6, 8, 12, 16, 19, 21, 25, and 27-30, cancel claims 3 and 18
`
`without prejudice. and add claims 31 -39 as follows.
`
`I.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode. the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly-ionized plasma proximate to the anode and
`
`the cathode assembly; and
`
`a power supply that generates a voltzigepulse hmeen the
`anode and the cathode wsembly _t_l_1lt C1‘ei-'J.t§_‘-Pl-Fig s strongly-ionized
`plasma from the weekly-ionized plasma, an amplitude and a rise time ofthe voltage pulse ‘
`hem’g chosen to increase
`a velesee-delisigg of ions
`in the stron g1y~i oniaced plasma
`generate
`
`sufficient thermal energy in the sputtering target to cause a sputtering yield of the
`
`sputtering target to be non-linearly related to :1 temperature of the sputtering target.
`
`2.
`
`(engine!) The sputtering source of claim 1 wherein the electric field comprises a quasi-
`
`3.
`
`4.
`
`static electric field.
`
`(cancelled).
`
`(currently amended) The sputtering source of claim 3 1 further comprising a gas flow
`controller awhmg that controls a flow of feed gas to the strongly-
`
`jonizeg plasma, the additional feed gas allowing additional power to be absorbed by the
`
`
`
`energy in the sputtering target.
`
`PAGE N26‘ RCVD AT fil14l20ll4 10:56:05 PM [Eastern Daylight Time] ‘ SVRIUSPTO-EFXRF-llll‘ DNl3:lll29305 * CSIDITS1 271 152?* DURATION (mm-ss):fl8-12
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`08/14/2004 HON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`nos/023
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 6. 7. 20. 34, and 40 and add claims 41-48 as follows.
`
`I.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode and—fom+ing—a-gap
`
`therebetween, the cathode assembly including a sputtering target;
`
`an ionization source that generates a weak1y—ionized plasma proximate to the
`
`anode and the cathode assembly;
`
`<1)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plasma, the magnetic field substantially trapping electrons in the weakly-
`
`ionized plasma proximate to the sputtering target; and
`
`a power supply g§g§r_ag,n'g a voltage pulse thal. produces an electric field between
`
`the cathode assembly and the anode,
`
`an ampljgggtq
`
`gig a piss time of the voltage pulse being chosen to increase an excitation rate of
`
`und state at m
`
`at a
`
`c t '
`
`c weak] -ionized lasma to create a multi-
`
`step ioni-/,ati on process that generates a stron gig-ionized plasma fi'on1 the wcal<ly—
`
`jgiqizg plfla, the mu1ti-stc_:p- ionization process comprising exciting the gound
`
`state atoms to generate general-ins excited atoms and then
`
`m ionizing the excited atoms within the weakly-ionized plasma
`
`surface-of-the sputter target material from the sputtering target,-to-generate
`
`create ions that isnpaeta
`
`sputterin-g—fl-we:
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
`PAGE arzwzcvn AT amtzout 10:55:05 pm [Eastem Daylight Time]‘SVR:USPTO-EFXRF-110‘ DN|S:8l293D5‘ cslmm 271 1527‘DURAT|0N (mm-ss):03-12
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`08/14/2004 MUN 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`one/023
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No; 10/065,277
`‘ Page 3 of 20
`
`3.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant voltage.
`
`(original) The sputtering source of claim I wherein the electric field comprises a quasi-
`
`static electric field.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(currently amended) The sputtering source of claim 1 wherein a 1.1); rise time of the
`
`voltage pulse electric-field is chosen to increase the ionization rate of the excited atoms in
`
`the wealcly—ionized plasma.
`
`(currently amended) The sputteriug source of claim 1 wherein the weakly-ionized
`
`glam gas reduces the probability of developing an electrical breakdown condition
`
`-
`
`between the anode and the cathode assembly.
`
`(original) The sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma impact the surface of the sputtering target in at manner that causes substantially
`
`uniform erosion ofthc sputtering target.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of‘ the sputtering flux.
`
`ll.
`
`(original) The sputtering source of claim 10 further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`12.
`
`(original) The sputtering source of claim 10 further comprising a bias voltage power
`
`supply that applies a bias voltage to a substrate that is positioned on the substrate support.
`
`PRGE 9l25 ‘ RCVD AT 611412004 10:56:05 PHI [Eastern Day|IghtTIme] * SWIIUSPTO-EFXRF-lifl ‘ DNIS:87293ll5 * CSlD:?81 271 1527' DURATION (mm-ss):fl8-12
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`08/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`010/026
`
`Amendment and Response
`Applicant: Chistynkov
`Serial No.: 101065.277
`Page 4 of 20
`
`13.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`14.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
`
`15.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
`
`power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`16.
`
`(original) The sputtering source of claim l wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`17.
`
`(original) The sputtering source of claim 1 wherein the ionization source is chosen from
`
`the group comprising aUV source, an X-ray source, an electron beam source, and an ion
`beam source.
`
`18.
`
`(original) The sputtering source of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`I9.
`
`(original) The sputtering source of claim 1 wherein the sputtering targt is formed of a
`material chosen fi'om the group comprising a metallic material, a polymer material, a
`
`superconductive material, a magnetic material. a non-magnetic material. a conductive
`
`material, a non-conductive nr arterial, a composite material, a. reactive material, and a
`
`refractory material.
`
`20.
`
`(currently amended) A method of generating sputtering flux, the method comprising:
`
`a)
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
`PAGE W26‘ RCVD AT Bl14i20fl-i 10:5fi:05 PM [Easlem Daylight Time]* SVR:lISPTO-EFXRF-1l0' DNlS:87l930fi ' CS|D:i81 231 152? " DURATION (mm-ss):0t-12
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`08/14/2004 MON 22:41 FAX 781 271 1527 KURT RALTSCHENBACH
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`@011/026
`
`Amendment and Response
`Applicant: Chistyalcov
`Serial No.: 10/065,277
`Page 5 of 20
`
`b)
`
`generating a m agnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target; and
`
`c)
`
`applying an-electric-fi-aid g xoltage pulse to the wealdy;ioni-zed plusm-a£i
`
`amplitude and a rise time of the voltage pulse being chosen to ig§1§§_1§e an
`
`excitation rate of ggund state atoms that are present in the weakly-ionized plasma
`
`to 4:551‘e a mulg]-stgg ionization process that generates a strongly-ionized plasma
`
`from the weak1y—ionized plasma, the multi-stgp ioni;_'.z1!;_iszn process comm-ising
`
`exciting the gmund state atoms to generate excited that-excites atoms and then
`-11
`or
`v
`-
`3
`. "‘='=--:--.
`
`
`enel—$at-generates
`--
`=2
`
`,
`
`-.
`
`eleet-seas-ionizing the excited atoms within the weakly-jggigeg plasma to —thei=eby
`
`
`
` '' ' ' 9% ions that '
`
`
`
`21.
`
`22.
`
`23.
`
`24.
`
`25.
`
`sputter target material Rom the sputtering target‘
`
`(original) The method of claim 20 wherein the applying the electric field comprises a
`
`applying a quasi-static clcctric field.
`
`(original) The method of‘ claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the weakly-ionized plasma.
`
`(on' ginal) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`(original) The method of claim 23 fiirther comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that rcduces a probability of
`
`developing an electrical breakdown condition proximate to the sputtering target.
`
`PAGE 11l2li ‘ RCVDAT 6l14l2{l0-l 10:55:05 PM [Easlem DayIigl1tTime|* SVR:l.|SPTO-EFXRF-110‘ DN|S:872930fi " CS|D:?81 271 1527 ‘ DURATION (mm-ss]:08-12
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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACI-I
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`D12/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 6 of 20
`
`26.
`
`27.
`
`(original) The method ofclaim 23 further comprising selecting at least one of a pulse
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface ofthe sputtering target.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a. pulse having
`a current density that is greater than 1A/em”.
`
`28.
`
`(original) The method of claim 23 wherein the electri cal pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`29.
`
`30.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse train
`having a repetition rate that is substantially between 0. 1H2 and 1kHz.
`
`(original) The method ofclaim 20 wherein the ions in the strongly-ionized plasma
`impact the surface of the sputter-ing target in a substantially uniform manner.
`
`31.
`
`(original) The method ofclaim 20 wherein the strongly-ionized plasma is substantially
`
`uniform proximate to the sputtering target.
`
`32.
`
`33.
`
`34.
`
`(original) The method of claim 20 wherein the peak plasma density ofthe weakly-
`ionizcd plasma is less than about 10” cm".
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`ionizcd plasma is greater than about 10" cm':”.
`
`(currently amended) The method of claim 20 further comprising forming a film fiem-the
`sputtering-flux on a surface of a substrate from the material sputtered from the muttering
`
`target.
`
`35.
`
`(original) The method of claim 34 further comprising controlling a temperature of the
`
`film.
`
`36.
`
`(original) The method of claim 34 Ihrther comprising applying a bias voltage to the film.
`
`PAGE 12l26 * RCVD AT 5l1tl2004 10:56:05 PM [Eastern Daylight Timer‘ SVR:USPTO-EFXRF-1l0' DH|S:8729306 ' CS|D:781 271 152?‘ DURATION {mm-ss):03-12
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`013/026
`
`Amendment and Response
`Applicant: Chistyalcov
`Serial No.: 10/065,277
`Page 7 of 20
`37.
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electric field.
`
`38.
`
`39.
`
`(original) '1‘he method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electrode that is adapted to emit electrons.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`an ion beam source.
`
`40.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a.)
`
`b)
`
`c)
`
`means for ionizing -.1 feed gas to generate a Weakly-ionized plasma proximate to a
`
`sputtering target;
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping electrons in the weakly-ionized plasma
`
`proximate to the sputtering target; and
`
`means for applying d g_u;1tgg§_p;t1s_e to the weakly-ionized plasma‘
`an amplitude and at rise time of the voltage pulse being chgsen to increase an
`excitation rate of ground state atoms that are present in the weakly-ionized plasma
`to create a. mum,’-step ionization process that generates a strongly-ionized plasma
`from the weakly-ionized plasma, the multi-step ionization p_tgce§s §gn1p;1'5g;'g
`
`exciting the gound state atoms to generate excited that-eaecit-es atoms and then
`
`
`_; :__
`._'__
`-4
`.
`.—-.
`.-.
`_.
`-_....4_
`-...
`.
`md-&
`;~ -...-._.._ ..-.-
`eleet-rone-ionizing the excited atoms within the weakly-ionized plasma to thereby
`Q-ggjtgions that
`sputter target material figm the sputtering target;
`
`41.
`
`(new) The sputtering source of claim 1 wherein the cathode assembly and the anode are
`positioned so as to form a gap therebetweeti.
`
`PAGE 1326' RCVDAT 5i14i2|JD4 10:55:05PM [Eastern DayilghtTime]‘ SVR:USPTO-EFXRF-110’ DNlS:87l93Di* CSlD:T81 271 152? ' DURATION(mm-ss):03-12
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RALISCEENBACH
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`014/026
`
`Amendment and Response
`Applicant: Chistyalcov
`Serial No.: l0l065,277
`Page 3 of 20
`
`42.
`
`(new) The sputtering source of claim l wherein the weakly-ionized plasma is generated
`
`from a feed gas that comprises the ground state atoms.
`
`43.
`
`(new) The sputtering source of claim 1 wherein the excited atoms within the weakly-
`
`ionized plasma are ionized by electrons to create the ions that sputter material from the
`
`sputtering target.
`
`44.
`
`(new) The sputtering source of claim 1 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and 100V/p.sec.
`
`45.
`
`(new) The sputtering source of claim 1 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 30kV.
`
`46.
`
`(new) The method of claim 20 wherein the weakly-ionized plasma is generated from a
`
`feed gas that comprises the ground state atoms.
`
`'
`
`47.
`
`(new) The method of claim 20 wherein a duration of the weakly-ionizcd plasma is
`
`approximately between one microsecond and one hundred seconds.
`
`48.
`
`(new) The method of claim 20 wherein the ionizing the excited atoms within the weal<1y~
`
`ionized plasma to create ions that sputter material fi'om.t.hc.sputtering target comprises
`
`ionizing the excited atoms with electrons.
`
`49.
`
`(new) The method of claim 20 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and 100V/uses.
`
`50.
`
`(new) The method of claim 20 wherein the amplitude of the voltage pulse is
`
`approximately bctwcen 100V and 30kV.
`
`PAGE 14426’ RCVD AT BMIZDU4 10:56:05 PM [Eastern Daylight Tlmel‘ SVR:USPTD-EFXRF-1!|J ' DNIS:8Tl9306 ‘ CS|D:?81 271 1527 * DURATION (mm-ss):03-12
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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`015/026
`
`Arnendrnent and Response
`Applicant: Cbislyakov
`Serial No.: l0!065,277
`Page 9 of 20
`
`Bending Claims:
`
`REMARKS
`
`Claims 1-50 are currently pending in the present application. Claims 1, 6, 7, 20, 34,
`
`and 40 are amended by the present Atnendment. Claims 41-50 are added by the present
`
`Amendment. No new matter is added by these amendments. Upon entry of the present
`
`Amendment, reconsideration of claims 1-40 and consideration of new claims 41 -50 is
`
`respectfully requested.
`
`gejections under 35 U.S.C. §102gb) As Being Anticipated by Kouznetsov:
`
`Claims 1, 5-10. 13, 14. 16, 19, 20, 22-31, 34, 37, 38, and 40 are rejected under 35 U.S.C.
`
`§l02(b) as being anticipated by Kouznetsov (W098/40532) (hereinafter “Kouznetsov”).
`
`Independent claims 1. 7, 20 and 40 are herein amended to more clearly recite the invention. No
`
`new matter is added by these amendments.
`
`To anticipate a claim under 35 U.S.C. §102, :1 single reference must teach every aspect of
`
`the claimed invention either explicitly or irnpliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10, 13, 14, 16, and 12
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`
`recite a magnetically enhanced sputtering source having a power supply that generates a voltage
`
`pulse that produces an electric field between an anode and a cathode assembly. An amplitude
`
`and a rise time of the voltage pulse is chosen to increase the excitation rate of ground state atoms
`
`that are present in the weakly-ionized plasma to create a multi-step ionization process. The
`
`rnulti-step ionization process includes exciting the ground state atoms to generate excited atoms,
`
`and then ionizing the excited atoms in the weakly—ionized plasma. This amendment is supported
`
`by the originally-filed specification of the present application. See, for example, paragraphs 59-
`
`PAGE 15l2fi ' RCVD AT 5l14l2ll04 10:56:05 PM [Eastern Daylight Time|' SVR:l3SPTO-EFXRF-1l0' DN|S:8?29306 ‘ CS|D:781 271 1527 * DURATION (mm-ss):t8-12
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
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`018/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 10 of 20
`
`69 ofthe originally-filed specification. The Applicant submits that no new matter is added by
`
`the amendments to independent claim 1.
`
`The Applicant believes that there is no description in Kouznetsov of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase an
`excitation rate of ground state atoms that are present in a weakly-ionized plasma to generate a
`multi-stop ionization process. Instead, the Applicant believes that the pulsed power source
`described in Kouznetsov generates a gas having a fully ionized state using a single-step
`~ ionization process. According to Kouznetsov, the pulsed power source used in his apparatus
`provid65 “pulses in Such 8- W8)’, i.e. that so much power is developed in each pulse. that in the
`application of such a pulse, For a very short time during the start ofthe pulse, the state ofthe gas
`located at the region in which the electrons are trapped by the magnetic field will very rapidly
`reach a fiilly ionized state..." See, for example. Kouznetsov page 5, lines 1-4. The application
`of a very large voltage pulse (2,000 Volts) having a fast rise time appears to fully ionize the gas
`by direct ionization from electrons located in the region having crossed electric and magnetic
`fields. See, for example, Kouznetsov page 12, lines 22-26.
`
`The Applicant respectfully submits that there is no description in Kouznelsov of‘ a power
`supply that generates a voltage pulse which creates a multi-step ionization process that includes
`generating excited atoms from ground state atoms that are present in the weakly ionized plasma,
`and then ionizing the excited atoms in the weakly-ionized plasma as claimed in amended claim
`1. instead, the Applicant believes that the ionization process described in Kouznetsov is a
`single-step ionization process known as direct ionization by electron impact.
`
`In View of the above remarks, the Applicant respectfully submits that Kouznetsov does
`not describe each and every element of independent claim 1 as currently amended, either
`expressly or inherently. Therefore, the Applicant submits that Kouznctsov does not anticipate
`independent claim 1 as currently amended under 35 U.S.C. §1(l2(b). Thus, the Applicant
`submits that independent claim 1 as currently amended is allowable. The Applicant also submits
`that dependent claims 5-10. 13. 14, 16, and 19 are allowable as depending from an allowable
`
`base claim.
`
`PAGE 15l2fl‘ RCVDAT fillifillfl-l 10:55:05PM[Eastern DaylightTime!‘ SVR:llSPTO-EFXRF-llll‘DN|S:872930fi' CSlD:78l 271 1527‘ DURATION(mm-ss]:ll8-12
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`06/14/2004 more 22:43 FAX 731 271 1527 KURT RAUSCHENBACII
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`Amcndrnent and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 11 of 20
`Independent gglaim 29 and Dgpgpggggt Claims 22-31, 34, 3 Z, and 38
`
`017/023
`
`eetfully submits that Kouznetsov does not describe each and every
`The Applicant rcsp
`laim 20 is herein amended
`element of independent claim 20 as currently amended. Independent c
`plying a voltage pulse to the weakly-ionized plasma. An amplitude and a
`to recite the step of ap
`ltage pulse are chosen to increase an excitation rate of ground state atoms in
`rise time ofthe vo
`step ionization process. The rnulti-step ionization
`the weakly-ionized plasma to create a multi-
`y-ionized plasma, and then
`process generates excited atoms from ground state atoms inthc weakl
`s the excited atoms in the weakly-ionized plasma. This amendment is supported by the
`ionize
`led specification ofthe present application. See, for example, paragraph 59-69 ofthe
`originally-fi
`the amendments to independent claim
`originally-filed specification. No new matter is added by
`20.
`
`The Applicant believes that there is no description in Kouznetsov ofa method of
`a multi-step ionization process as claimed in
`generating a strongly-ionized plasma using
`scusscd, the Applicant believes that Kouznetsov
`amended claim 20. Instead, as previously di
`describes a single-step ionization process whereby the application of a very large voltage pulse.
`having a fast rise time creates a gas having a fully ionized state (See page 12, lines 22-26). The ‘
`Applicant believes that the large voltage pulse described in Kouznetsov ionizes the gas by direct
`ionization from electrons located in the region ofcrossed electric and magnetic fields.
`
`In View ofthe above remarks, the Applicant respectfully submits that Kouznetsov
`and every element ofindependcnt claim 20 as currently amended,
`does not describe each
`Kouznetsov does not
`either expressly or inherently. Therefore, the Applicant submits that
`anticipate independent claim 20 as currently amended. Thus, the Applicant subm
`amended independent claim 20 and dependent claims 22-31, 34, 37, and 38
`under 35 U.s.c. §l02(b).
`
`are allowable
`
`its that
`
`Reiecgigpg Eggs; 35 U.S.C. §102§b) as Being Anticipated by Mozgrin:
`-25. 27-29. 32. 33, 37, and 40 are rejected under 35
`“High Current Low—Prcssure
`
`Claims 1, 4, S, '7, l3, 14, I6, 19
`U.S.C. §l02(b) as being anticipated by Mozgrin et al. entitled
`Quasivstationary Discharge in a Magnetic Field: Experimental Resear
`
`ch”, Plasma Physics
`
`PAGE1Tl26‘RCVDATillllilllll10:56:05PM[EaslemDaylightTime]'9VR:l|SPTO-EFXRF-1l0'DN|S'.8?29306‘CSlD:781 211 1527*DURATION[mm-ss]:08-12
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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACII
`
`018/026
`
`Amendment and Response
`Applicant: Chistyakov
`Sex-ialNo.: 10!D65,277
`Page 12 of 20
`
`Reports, Vol. 21, No. 5, 1995. pp. 400-409 (hcrcinafler "Mo7.grin”). Independent claims 1, 20
`and 40 are herein amended to more clearly recite the invention. No new matter is added by these
`
`amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`the claimed invention either explicitly or implicdly. Any feature not directly taught by the
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Lndggcndent Claim 1 and Dependent Claims 4, 5, 7, 13, M, 16, and 19
`
`The Applicant respectfully submits that Mozgrin does not describe each and every
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`recite a power supply generating a voltage pulse that produces an electric field between a
`cathode assembly and an anode. The voltage pulse has an amplitude and a rise time that are
`chosen to increase a rate of excitation ofground state atoms present in the weakly-ionized
`plasma to create a multi—step ionization process. The multi-step ionization process generates 5'
`strongly-ionized plasma from the weakly-ionized plasma by first exciting ground state atoms to
`generate excited atoms, and then by ionizing the excited atoms in the weakly—ionizcd plasma.
`This amendment is supported by the originally-filed specification of the present application.
`See. for example, paragraphs 59-69 of the originally-filed specification. The Applicant submits
`that no new matter is added by the amendments to independent claim 1.
`
`’
`
`The Applicant believes that there is no description in Mozgrin of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase the
`excitation rate of ground state atoms present in the weakly-ionized plasma to create a multi-
`step ionization process. Instead, the Applicant believes that Mozgrin describes a pulsed
`discharge supply unit that generates a plasma with a prior art direct ionization process using
`
`very high-power pulses.
`
`The Applicant believes that the quasi-stationary discharge described in Mozgrin is
`formed with a prior art ionization process known as direct ionization by electron impact and
`
`PAGE 18l26* RCVDM 5l14l2llM 10:56:05 PM [Eastern DaylightTime]'SVR:l|SPTO-EFXRF-1lll‘ DNlS:8729'.lll6* CSID:?81 271 152?‘ DURATION(mm-sslzos-12
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`:03/14/.200-I MUN 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`@019/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 13 of 20
`
`does not use the multi-step ionization process of the present invention. For example, the
`current. and voltage characteristics (CVC) shown in FIG. 4 of Mozgrin indicate to the
`Applicant that the quasi-stationary discharge described in Mozgrin is formed by direct
`ionization. The CVC shown in FIG. 4 ofMozgx.-in includes four parts.
`
`Part 1 of the CVC shown in FIG. 4 ofMozgrin is a low current (0.‘2.A) discharge
`regime that is a pre—ionization stage of the quasi-stationary discharge. The pre-ionization
`stage is generated using a high-voltage power supply unit that produces a bigh-voltage, low-
`current discharge between two electrodes to create a prc-ionized plasma. The pre-ionized
`plasma includes ions that are generated by a typical direct ionization process.
`
`Part 2 of the CVC shown in FIG. 4 of Mozgrin is a high—cu:trent. high-voltage
`discharge regime having a discharge current that is in the range of 0.2A-1 SA and a discharge
`voltage that is in the range of 350V-500V. The plasma discharge appears to be atypical
`magnetron plasma discharge that is commonly generated in plasma processing systems. The
`plasma discharge is formed by using a square voltage pulse. There is no description in
`Mozgrin related to Part 2 cf‘ the CVC ofchcosing an amplitude and arise time ofthe voltage ,
`pulse in order to increase a rate ofexcitation of ground state atoms to create excited atoms in
`amulti-step ionization process as claimed in amended independent claim 1. In fact, there is
`no description in Mozgrin of choosing an amplitude and a rise time of a voltage pulse to
`change the plasma discharge conditions. Mozgrin describes varying the plasma discharge
`conditions by changing the pressure and magnetic field strength, but does not mention
`varying the plasma discharge conditions by changing the amplitude and the rise time ofthe
`voltage pulse. See Mozgrin page 403 lines 8-13.
`
`,
`
`Part 3 ofthe CVC shown in FIG. 4 of‘ Mozgrin is a high-current discharge regime in
`which the discharge voltage remains stationary at 90V over a current that is in the range of
`15A-1,000A. Part 3 ofthe CVC corresponds to a prior art magnetron discharge for high-
`pressure (10" torr) plasma processing. The voltage drops sharply in this regime until the
`current reaches a quasi-stationary value that maintains the discharge power at a constant
`value. There is no description related to Part 3 of the CVC of choosing an amplitude and a
`
`PAGE 19{25* RCVDAT 511412004 10:56:05 PM [Eastern DaylightTimer SVR:USPTO£FXR1'--110‘ DN|S:8?29305" CS|D:i81 2?1 152? " DURATION(mm-ss):0t-12
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`I 08/14:/2004 MON 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`020/O26
`
`Amendment and Response
`Applicant: Chistyalrov
`Serial No.: 10lO65,277
`Page 14 of 20
`
`rise time of‘ a voltage pulse to increase a rate of excitation of ground state atoms to create
`
`excited atoms in a multi-step ionization process as claimed in amended independent claim 1.
`
`Part 4 of the CVC shown in FIG. 4 ofMozgrin is a high-current, low-voltage arc
`
`discharge regime having a current that is greater than 1k.A and a voltage that is in the range
`
`of l0—30V. Arc discharges are generally undesirable for most plasma processing
`
`applications. Arc discharges are observed in conventional magnetrons when too much power
`
`applied to the plasma. There is no description related to Part 4 of the CVC of choosing an
`
`amplitude and a rise time of a voltage pulse to increase a rate of excitation of ground state
`
`atoms to create excited atoms in a multi-step ionization process as claimed in amended
`
`independent claim 1.
`
`Thus. the Applicant submits that there is no tcaching or suggestion of increasing an
`
`excitation rate of ground state atoms in a weakly-ionized plasma to generate a multi-step
`
`ionization process in either Part 1, Part 2, Part 3, or Part 4 of the CVC ol‘Mo7..grin. In View
`
`of the above remarks. the Applicant respectfiilly submits that Mozg-rin does not describe each
`
`and every element ofindepenclent claim 1 as currently amended, either expressly or
`
`inherently. Therefore, the Applicant submits that Mozgrin does not anticipate independent
`
`claim I as currently amended. Thus, the Applicant submits that amended independent claim
`
`1 and dependent claims 4, S, 7, 13, 14, 16. and 19 are allowable under 35 U.S.C. §102(b).
`
`Tnde endent Claim 20 andD endent
`
`laim 2 -
`
`- 9
`
`2 33 and 37
`
`The Applicant believes that Mozgiin does not describe each and every element of
`
`independent claim 20 as currently amended. Independent claim 20 is herein amended to recite
`
`the step of applying a voltage pulse to the weakly-ionized plasma where an amplitude and a rise
`
`time of the voltage pulse are chosen to increase an excitation rate of ground state atoms in the
`
`weakly—ionized plasma to create a multi-step ionization process. The multi-step ionization
`
`process includes exciting the ground state atoms to generate excited atoms, and then ionizing the
`
`excited atoms within the weakly-ioni zed plasma to create ions that sputter target materi al fiom
`
`the sputtering target.
`
`The Applicant respectfully submits that there is no description in Mozgrin of applying 3.
`
`PAGE M5 ‘ RCVD Al 5l14l20ll4 10:55:05 PM [Easlem Daylight Timer S‘lR:USPTO-EFXRF-110' Dll|S:8T293ll5 ' CS|D:l81 2l1 1527‘ DURATION (mm-ss]:tI8-12
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`D8/14/2004 MON 22:44 FAX 781 271 1527 KURT RAITSCHENBACII
`
`@021/02
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 15 of 20
`
`voltage pulse to a weakly-ionized plasma where an amplitude and a rise time of the voltage pulse
`
`are chosen to increase an excitation rate of ground state atoms in the weakly-ionized plasma to
`
`create a multi-step ionization process as claimed in amended claim 20. In view of the above
`
`remarks, the Applicant respectfully submits that Mozgrin does not describe each and every
`
`element of‘ independent cla