`Petition for Inter Partes Review
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________________________________________
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________________________________________
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`FUJITSU SEMICONDUCTOR LIMITED AND
`FUJITSU SEMICONDUCTOR AMERICA, INC.
`Petitioner
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`v.
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`ZOND, INC.
`Patent Owner
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`Case IPR______________
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`PETITION FOR INTER PARTES REVIEW OF
`U.S. PATENT NO. 6,853,142
`CHALLENGING CLAIMS 1, 3-10, 12, 15, 17-20 AND 42
`UNDER 35 U.S.C. § 312 AND 37 C.F.R. § 42.104
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`
`DOCKET NO.: 52055.2
`Filed on behalf of: Fujitsu Semiconductor Limited and Fujitsu Semiconductor
`America, Inc.
`David M. O’Dell, Reg. No. 42,044
`David L. McCombs, Reg. No. 32,271
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`By:
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
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`TABLE OF CONTENTS
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`I. Mandatory Notices ........................................................................................ - 1 -
`A. Real Party-in-Interest ............................................................................... - 1 -
`B. Related Matters ......................................................................................... - 1 -
`C. Counsel ..................................................................................................... - 2 -
`D. Service Information .................................................................................. - 2 -
`II. Certification of Grounds for Standing .......................................................... - 2 -
`III. Overview of Challenge and Relief Requested .............................................. - 2 -
`A. Prior Art Patents and Printed Publications ................................................ - 3 -
`B. Grounds for Challenge .............................................................................. - 3 -
`IV. Brief Description of Technology .................................................................. - 4 -
`A. Plasma ....................................................................................................... - 4 -
`B.
`Ions and Excited Atoms ............................................................................ - 5 -
`V. Overview of the ‘142 Patent .......................................................................... - 6 -
`A. Summary of Alleged Invention of the ’142 Patent .................................... - 6 -
`B. Prosecution History ................................................................................... - 7 -
`VI. Overview of the Primary Prior Art References ............................................ - 8 -
`A. Summary of the Prior Art .......................................................................... - 8 -
`B. Overview of Mozgrin ................................................................................ - 8 -
`C. Overview of Wang .................................................................................. - 10 -
`D. Overview of Lantsman ............................................................................ - 11 -
`VII.
`Claim Construction ................................................................................. - 12 -
`A.
`“weakly-ionized plasma” and “strongly-ionized plasma” ....................... - 13 -
`VIII. Specific Grounds for Petition .................................................................. - 14 -
`A. Ground I: Claims 1, 3-10, 12, 15, 17-20 and 42 are obvious in view of the
`combination of Mozgrin and Lantsman ........................................................... - 14 -
`1.
`Independent claim 1 ............................................................................. - 14 -
`2.
`Independent claim 10 ........................................................................... - 28 -
`3. Dependent claims 3-9, 12, 15, 17-20 and 42 ........................................ - 30 -
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`B. Ground II: Claims 1, 3-7, 9, 10, 12, 15, 19, 20 and 42 are obvious in view of
`the combination of Wang and Lantsman ......................................................... - 39 -
`1.
`Independent claim 1 ............................................................................. - 39 -
`2.
`Independent claim 10 ........................................................................... - 49 -
`3. Dependent claims 3-7, 9, 12, 14, 15, 19, 20 and 42 ............................. - 50 -
`C. Ground III: Claims 8, 17 and 18 are obvious in view of the combination of
`Wang, Lantsman and Mozgrin ........................................................................ - 57 -
`IX. Conclusion ................................................................................................. - 59 -
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`TABLE OF AUTHORITIES
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`In re ICON Health & Fitness, Inc., 496 F.3d 1374, 1379 (Fed. Cir. 2007).
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`37 C.F.R. §42.22(a)(1)
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`37 C.F.R. § 42.100(b)
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`37 C.F.R. §42.104(a)
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`37 C.F.R. §42.104(b)(1)-(5)
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`77 Fed. Reg. 48764 (Aug. 14, 2012).
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
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`I. MANDATORY NOTICES
`A. Real Party-in-Interest
`Fujitsu Semiconductor Limited and Fujitsu Semiconductor America, Inc. are
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`the real parties-in-interest (“Petitioner”).
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`B. Related Matters
`Zond has asserted U.S. Patent No. 6,853,142 (“’142 Patent”) (Ex. 1001)
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`against numerous parties in the District of Massachusetts, 1:13-cv-11570-RGS
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`(Zond v. Intel); 1:13-cv-11577-DPW (Zond v. AMD, Inc., et al); 1:13-cv-11581-
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`DJC (Zond v. Toshiba Am. Elec. Comp. Inc.); 1:13-cv-11591-RGS (Zond v. SK
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`Hynix, Inc.); 1:13-cv-11625-NMG (Zond v. Renesas Elec. Corp.); 1:13-cv-11634-
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`WGY (Zond v. Fujitsu, et al.); and 1:13-cv-11567-DJC (Zond v. Gillette,
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`Co.). Petitioner is also filing additional Petitions for Inter Partes review in several
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`patents related1 to the ’142 Patent.
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`The below-listed claims of the ‘142 Patent are presently the subject of a
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`substantially identical petition for inter partes review styled Intel Corporation v.
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`Zond, Inc., which was filed March 13, 2014 and assigned Case No. IPR2014-
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`00494. Petitioner will seek joinder with that inter partes review under 35 U.S.C. §
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`315(c), 37 C.F.R. §§ 42.22 and 42.122(b).
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`1 The related patents, e.g., name the same alleged inventor.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
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`C. Counsel
`Lead Counsel: David M. O’Dell (Registration No. 42,044)
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`Backup Counsel: David L. McCombs (Registration No. 32,271)
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`Service Information
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`D.
`E-mail:
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`David.odell.ipr@haynesboone.com
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`david.mccombs.ipr@haynesboone.com
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`Post and hand delivery: David M. O’Dell
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`Haynes and Boone, LLP
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`2323 Victory Ave., Suite 700
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`Dallas, Texas 75219
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`Telephone: 972-739-8635
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`Fax: 214-200-0853
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`Counsel agrees to service by email.
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`II. CERTIFICATION OF GROUNDS FOR STANDING
`Petitioner certifies pursuant to Rule 42.104(a) that the patent for which review
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`is sought is available for inter partes review and that Petitioner is not barred or
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`estopped from requesting an inter partes review challenging the patent claims on the
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`grounds identified in this Petition.
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`III. OVERVIEW OF CHALLENGE AND RELIEF REQUESTED
`Pursuant to Rules 42.22(a)(1) and 42.104(b)(1)-(2), Petitioner challenges
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`claims 1, 3-10, 12, 15, 17-20 and 42 of the ’142 Patent.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`Prior Art Patents and Printed Publications
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`A.
`The following references are pertinent to the grounds of unpatentability
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`explained below: 2
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`1.
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`D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge
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`in a Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No.
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`5, pp. 400-409, 1995 (“Mozgrin” (Ex. 1003)), which is prior art under 102(b).
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`2.
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`U.S. Pat. No. 6,190,512 (“Lantsman” (Ex. 1004)), which is prior art under
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`102(b).
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`3.
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`U.S. Pat. No. 6,413,382 (“Wang” (Ex. 1005)), which is prior art under 102(a)
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`and (e).
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`B. Grounds for Challenge
`Petitioner requests cancellation of claims 1, 3-10, 12, 15, 17-20 and 42 of the
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`’142 Patent as unpatentable under 35 U.S.C. §103. This Petition, supported by the
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`declaration of Dr. Uwe Kortshagen (“Kortshagen Decl.” (Ex. 1002))3 filed herewith,
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`demonstrates that there is a reasonable likelihood that Petitioner will prevail with
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`2 The ‘142 Patent issued prior to the America Invents Act (the “AIA”). Accordingly,
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`Petitioner has chosen to use the pre-AIA statutory framework to refer to the prior art.
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`3 Dr. Kortshagen has been retained by Petitioner. The declaration at Ex. 1002 is a
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`copy of Dr. Kortshagen’s declaration filed in IPR2014-00494, discussed above.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`respect to at least one challenged claim and that each challenged claim is not
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`patentable.4 See 35 U.S.C. § 314(a).
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`IV. BRIEF DESCRIPTION OF TECHNOLOGY
`A.
`Plasma
`A plasma is a collection of ions, free electrons, and neutral atoms.
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`Kortshagen Decl. ¶ 21 (Ex. 1002). The negatively charged free electrons and
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`positively charged ions are present in roughly equal numbers such that the plasma as
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`a whole has no overall electrical charge. The “density” of a plasma refers to the
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`number of ions or electrons that are present in a unit volume. Kortshagen Decl. ¶ 21
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`(Ex. 1002).5
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`Plasma had been used in research and industrial applications for decades
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`before the ‘142 patent was filed. Kortshagen Decl. ¶ 22 (Ex. 1002). For example,
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`sputtering is an industrial process that uses plasmas to deposit a thin film of a target
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`4 The term “challenged claims” as used herein refers to claims 1, 3-10, 12, 15, 17-
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`20 and 42 of the ‘142 Patent. Petitioner seeks to invalidate the remaining claims of
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`the ‘142 Patent in separate petitions.
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`5 The terms “plasma density” and “electron density” are often used interchangeably
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`because the negatively charged free electrons and positively charged ions are
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`present in roughly equal numbers in plasmas that do not contain negatively
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`charged ions or clusters. Kortshagen Decl. ¶ 21, FN1 (Ex. 1002).
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`material onto a surface called a substrate (e.g., silicon wafer during a semiconductor
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`manufacturing operation). See also Kortshagen Decl. ¶ 22 (Ex. 1002). Ions in the
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`plasma strike a target surface causing ejection of a small amount of target material.
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`Kortshagen Decl. ¶ 22 (Ex. 1002). The ejected target material then forms a film on
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`the substrate. Kortshagen Decl. ¶ 22 (Ex. 1002).
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`Under certain conditions, electrical arcing can occur during sputtering.
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`Kortshagen Decl. ¶ 23 (Ex. 1002). Arcing is undesirable because it causes explosive
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`release of droplets from the target that can splatter on the substrate. Kortshagen
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`Decl. ¶ 23 (Ex. 1002). The need to avoid arcing while sputtering was known long
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`before the ‘142 Patent was filed. Kortshagen Decl. ¶ 23 (Ex. 1002).
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`Ions and Excited Atoms
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`B.
`Atoms have equal numbers of protons and electrons. Kortshagen Decl. ¶ 24
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`(Ex. 1002). Each electron has an associated energy state. Kortshagen Decl. ¶ 24
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`(Ex. 1002). If all of an atom’s electrons are at their lowest possible energy state, the
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`atom is said to be in the “ground state.” Kortshagen Decl. ¶ 24 (Ex. 1002).
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`On the other hand, if one or more of an atom’s electrons is in a state that is
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`higher than its lowest possible state, then the atom is said to be an “excited atom.”
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`Kortshagen Decl. ¶ 25 (Ex. 1002). Excited atoms are electrically neutral– they have
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`equal numbers of electrons and protons. Kortshagen Decl. ¶ 25 (Ex. 1002). A
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`collision with a free electron (e-) can convert a ground state atom to an excited atom.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`Kortshagen Decl. ¶ 25 (Ex. 1002). For example, the ‘142 Patent uses the following
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`equation to describe production of an excited argon atom, Ar*, from a ground state
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`argon atom, Ar. See ‘142 Patent at 10:12 (Ex. 1001).
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`Ar + e- Ar* + e-
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`An ion is an atom that has become disassociated from one or more of its
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`electrons. Kortshagen Decl. ¶ 26 (Ex. 1002). A collision between a free, high
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`energy, electron and a ground state or excited atom can create an ion. Kortshagen
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`Decl. ¶ 26 (Ex. 1002). For example, the ‘142 Patent uses the following equations to
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`describe production of an argon ion, Ar+, from a ground state argon atom, Ar, or an
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`excited argon atom, Ar*. See ‘142 Patent at 3:1 and 9:14 (Ex. 1001).
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`Ar + e- Ar+ + 2e-
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`Ar* + e- Ar+ + 2e-
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`The production of excited atoms and ions was well understood long before the
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`‘142 patent was filed. Kortshagen Decl. ¶ 27 (Ex. 1002).
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`V. OVERVIEW OF THE ‘142 PATENT
`A.
`Summary of Alleged Invention of the ’142 Patent
`The ‘142 Patent describes generating a plasma by applying an electrical pulse
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`in a manner that allegedly reduces the probability of arcing. More specifically, the
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`claims of the ‘142 Patent are generally directed to generating a, so called, “weakly-
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`ionized plasma” and then applying an electrical pulse to increase the density of that
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`plasma so as to form a “strongly-ionized plasma.” The weakly-ionized plasma is
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`claimed to reduce the probability of forming an electrical breakdown condition.
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`Specific claims are directed to further operational details such as supplying a
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`feed gas to the plasma, characteristics of the electrical pulse, generating a magnetic
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`field and the type of power supply used.
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`Prosecution History
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`B.
`The first substantive office action rejected all independent claims as
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`anticipated. See 10/07/03 Office Action at 3 (Ex. 1007). The applicant then
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`amended every independent claim to require “the weakly-ionized plasma reducing
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`the probability of developing an electrical breakdown condition in the chamber”
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`or similar limitations. See 03/08/04 Resp. (Ex. 1008).
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`Following that amendment, the claims were allowed. The Notice of
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`Allowance explicitly recites these limitations as the examiner’s reasons for
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`allowance. 03/29/04 Allowance at 2 (“The prior art neither discloses nor suggests
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`… the weakly-ionized plasma reducing the probability of developing an electrical
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`breakdown condition in the chamber such as required by claims 1, 22, 43, 44…10
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`and 33.”) (Ex. 1009). However, as explained in detail below, and contrary to the
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`Examiner’s reasons for allowance, the prior art addressed herein teaches those and
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`all other limitations of the challenged claims. Kortshagen Decl. ¶ 31 (Ex. 1002).
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`U.S. PAATENT 6,8533,142
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`Pettition for Inteer Partes Reeview
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`OVERVIEEW OF THHE PRIMAARY PRIOOR ART RREFERENNCES
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`Summmary of thhe Prior AArt
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`As explaineed in detail below, limmitation-byy-limitationn, there is nnothing neww or
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`VI. O
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`A.
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`A A
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`non-obvvious in thee challengeed claims oof the ‘142
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`(Ex.
`Patent. Koortshagen DDecl. ¶ 32
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`an arc disccharge.”
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`1002).
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`B. Overrview of MMozgrin6
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`Mozgrin teaaches formming a plasmma “withouut forming
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`B M
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`Kortshaagen Decl. ¶ 33 (Ex. 11002). Fig. 7 of
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`Mozgrinn, copied bbelow, showws the currrent-
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`voltage characterisstic (“CVCC”) of a plaasma
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`dischargge. As shoown, Mozgrrin dividess this
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`CVC innto four disttinct regionns.
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`MMozgrin callls region 11 “pre-
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`ionizatioon.” Mozggrin at 402, right col, ¶¶ 2 (“Part 11 in the volltage oscilllogram
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`represennts the volttage of the stationary discharge
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`(pre-ionizaation stagee).” (emphaasis
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`added)) (Ex. 1003). See alsoo Kortshag
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`36 (Ex. 10002).
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`MMozgrin callls region 22 “high currrent magnnetron dischharge.” Moozgrin at 4009,
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`left col, ¶ 4 (“The implementtation of thhe high-currrent magnnetron disccharge
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`(regimee 2)…” (emmphasis addded)) (Ex. 1003). Seee also Korttshagen Deecl. ¶ 37 (EEx.
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`6 Mozgrrin is art off record, buut was not substantivvely applieed during pprosecutionn.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`1002). Application of a high voltage to the pre-ionized plasma causes the transition
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`from region 1 to 2. Kortshagen Decl. ¶ 37 (Ex. 1002). Mozgrin teaches that region
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`2 is useful for sputtering. Mozgrin at 403, right col, ¶ 4 (“Regime 2 was
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`characterized by an intense cathode sputtering…”) (Ex. 1003). See also Kortshagen
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`Decl. ¶ 37 (Ex. 1002).
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`Mozgrin calls region 3 “high current diffuse discharge.” Mozgrin at 409, left
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`col, ¶ 5, (“The high-current diffuse discharge (regime 3)…” (emphasis added))
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`(Ex. 1003). See also Kortshagen Decl. ¶ 38 (Ex. 1002). Increasing the current
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`applied to the “high-current magnetron discharge” (region 2) causes the plasma to
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`transition to region 3. Kortshagen Decl. ¶ 38 (Ex. 1002). Mozgrin also teaches that
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`region 3 is useful for etching, i.e., removing material from a surface. Mozgrin at
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`409, left col, ¶ 5 (“The high-current diffuse discharge (regime 3) is useful … Hence,
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`it can enhance the efficiency of ionic etching…”) (Ex. 1003). See also Kortshagen
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`Decl. ¶ 38 (Ex. 1002).
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`Mozgrin calls region 4 “arc discharge.” Mozgrin at 402, right col, ¶ 3 (“…part
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`4 corresponds to the high-current low-voltage arc discharge…” (emphasis added))
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`(Ex. 1003). See also Kortshagen Decl. ¶ 39 (Ex. 1002). Further increasing the
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`applied current causes the plasma to transition from region 3 to the “arc discharge”
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`region 4. Kortshagen Decl. ¶ 39 (Ex. 1002).
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`Within its broad disclosure of a range of issues related to sputtering and
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`etching, Mozgrin describes arcing and how to avoid it. Kortshagen Decl. ¶ 40 (Ex.
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`1002).
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`C. Overview of Wang7
`Wang discloses a pulsed magnetron sputtering device having an anode (24), a
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`cathode (14), a magnet assembly (40),
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`a DC power supply (100) (shown in
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`Fig. 7), and a pulsed DC power
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`supply (80). See Wang at Figs. 1, 7,
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`3:57-4:55; 7:56-8:12 (Ex. 1005). See
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`also Kortshagen Decl. ¶ 41 (Ex.
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`1002). Fig. 6 (annotated and reproduced below) shows a graph of the power Wang
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`applies to the plasma. Kortshagen Decl. ¶ 41 (Ex. 1002). The lower power level,
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`PB, is generated by the DC power supply 100 (shown in Fig. 7) and the higher power
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`level, PP, is generated by the pulsed power supply 80. See Wang 7:56-64 (Ex.
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`1005); see also Kortshagen Decl. ¶ 41 (Ex. 1002). Wang’s lower power level, PB,
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`maintains the plasma after ignition and application of the higher power level, PP,
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`raises the density of the plasma. Wang at 7:17-31 (“The background power level,
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`PB, is chosen to exceed the minimum power necessary to support a plasma... [T]he
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`7 Wang is art of record, but was not applied substantively during prosecution.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`application of the high peak power, PP, quickly causes the already existing plasma to
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`spread and increases the density of the plasma.”) (Ex. 1005). See also Kortshagen
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`Decl. ¶ 41 (Ex. 1002). Wang applies the teachings of Mozgrin in a commercial,
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`industrial plasma sputtering device. Kortshagen Decl. ¶ 41 (Ex. 1002).
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`D. Overview of Lantsman
`Like Mozgrin and Wang, Lantsman relates to plasma sputtering systems.
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`Lantsman at Title (“Soft Plasma Ignition in Plasma Processing Chambers”) (Ex.
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`1004); 1:6-8 (“This invention relates to reduction of device damage in plasma
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`processes, including DC (magnetron or non-magnetron) sputtering, and RF
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`sputtering.”) (Ex. 1004). See also Kortshagen Decl. ¶ 42 (Ex. 1002). Also like
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`Mozgrin and Wang, Lantsman is concerned with generating a plasma while avoiding
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`arcing. Lantsman at 1:51-59 (“Furthermore, arcing which can be produced by
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`overvoltages can cause local overheating of the target, leading to evaporation or
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`flaking of target material into the processing chamber and causing substrate particle
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`contamination and device damage…. Thus, it is advantageous to avoid voltage
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`spikes during processing whenever possible.”) (Ex. 1004). See also Kortshagen
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`Decl. ¶ 42 (Ex. 1002).
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`Lantsman also teaches supplying the feed gas during the entirety of the
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`plasma processing. Lantsman at 3:9-13 (“[A]t the beginning of processing, this
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`switch is closed and gas is introduced into the chamber. When the plasma process is
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`completed, the gas flow is stopped….”) (Ex. 1004); 4:36-38 (“To end processing,
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`primary supply 10 is disabled, reducing the plasma current and deposition on the
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`wafer. Then, gas flow is terminated….”) (Ex. 1004). See also Kortshagen Decl. ¶
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`43 (Ex. 1002).
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`Lantsman was not art of record during the prosecution of the ‘142 Patent.
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`Kortshagen Decl. ¶ 44 (Ex. 1002).
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`VII. CLAIM CONSTRUCTION
`A claim in inter partes review is given the “broadest reasonable construction
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`in light of the specification.” 37 C.F.R. § 42.100(b). Any claim term that lacks a
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`definition in the specification is therefore also given a broad interpretation.8 In re
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`ICON Health & Fitness, Inc., 496 F.3d 1374, 1379 (Fed. Cir. 2007). The following
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`discussion proposes constructions of and support therefore of those terms. Any
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`claim terms not included in the following discussion are to be given their broadest
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`reasonable interpretation in light of the specification as commonly understood by
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`those of ordinary skill in the art. Moreover, should the Patent Owner, in order to
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`avoid the prior art, contend that the claim has a construction different from its
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`8 Petitioner adopts the “broadest reasonable construction” standard as required by
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`the governing regulations. 37 C.F.R. § 42.100(b). Petitioner reserves the right to
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`pursue different constructions in a district court, where a different standard is
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`applicable.
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`broadest reasonable interpretation, the appropriate course is for the Patent Owner to
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`seek to amend the claim to expressly correspond to its contentions in this
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`proceeding. See 77 Fed. Reg. 48764 (Aug. 14, 2012).
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`“weakly-ionized plasma” and “strongly-ionized plasma”
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`A.
`The challenged claims recite “weakly-ionized plasma” and “strongly-ionized
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`plasma.” These terms relate to the density of the plasma, i.e., a weakly-ionized
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`plasma has a lower density than a strongly-ionized plasma. Kortshagen Decl. ¶ 46
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`(Ex. 1002). With reference to Fig. 3, the ‘142 Patent describes forming a weakly-
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`ionized plasma between times t1 and t2 by application of the low power 302 and then
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`goes on to describe forming a strongly-ionized plasma by application of higher
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`power 304. ‘142 Patent at 11:32-38; 12:9-16 (Ex. 1001). The ‘142 Patent also
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`provides exemplary densities for the weakly-ionized and strongly-ionized plasmas.
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`See ‘142 Patent at claim 17 (“wherein the peak plasma density of the weakly-ionized
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`plasma is less than about 1012 cm˗3”); claim 18 (“wherein the peak plasma density of
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`the strongly-ionized plasma is greater than about 1012 cm˗3”) (Ex. 1001).
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`Thus, the proposed construction for “weakly-ionized plasma” is “a lower
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`density plasma.” Likewise, the proposed construction for “strongly-ionized plasma”
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`is “a higher density plasma.”
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`Petitioner’s proposed construction is consistent with the position the Patent
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`Owner has taken in other jurisdictions. For example, the Patent Owner, when faced
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`with a clarity objection during prosecution of a related European patent application,
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`argued that “it is [sic] would be entirely clear to the skilled man, not just in view of
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`the description, that a reference to a ‘weakly-ionised plasma’ in the claims indicates
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`a plasma having an ionisation level lower than that of a ‘strongly-ionized plasma’
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`and there can be no lack of clarity.” 04/21/08 Response in EP 1560943 (Ex. 1014).
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`VIII. SPECIFIC GROUNDS FOR PETITION
`Pursuant to Rule 42.104(b)(4)-(5), the below sections, and as confirmed in the
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`Kortshagen Decl. ¶ 49 (Ex. 1002), demonstrate in detail how the prior art discloses
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`each and every limitation of claims 1, 3-10, 12, 15, 17-20 and 42 of the ’142 Patent,
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`and how those claims are rendered obvious by the prior art.
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`A. Ground I: Claims 1, 3-10, 12, 15, 17-20 and 42 are obvious in view
`of the combination of Mozgrin and Lantsman
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`The claim chart that Petitioner served on Feb. 11, 2014 in its ongoing
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`litigation involving the Petitioner and the Patent Owner, showing that claims 1, 3-10,
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`12, 15, 17-20 and 42 are obvious in view of the combination of Mozgrin and
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`Lantsman, is submitted hereto as Exhibit 1015 (Ex. 1015). Dr. Kortshagen has
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`reviewed the claim chart and agrees with it. Kortshagen Decl. ¶ 51 (Ex. 1002).
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`1.
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`Independent claim 1
`a)
`Claim 1 begins, “[a]n apparatus for generating a strongly-ionized plasma in a
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`The preamble
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`chamber.” As shown in Fig. 1, Mozgrin teaches generating plasma in “two types of
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`devices: a planar magnetron and a system with specifically shaped hollow
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`electrodes.” Mozgrin at Fig. 1; 400, right col, ¶ 4. (Ex. 1003). See also Kortshagen
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`Decl. ¶ 52 (Ex. 1002). The densities in Mozgrin’s regions 1-3 are summarized
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`below.
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` Region 1: 109 – 1011 cm-3.9
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` Region 2: exceeding 2x1013 cm-3.10
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` Region 3: 1.5x1015cm-3.11
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`Mozgrin generates a strongly-ionized plasma in both regions 2 and 3.
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`Kortshagen Decl. ¶ 53 (Ex. 1002). The density in those regions matches the
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`exemplary density given for a strongly-ionized plasma in the ‘142 Patent. ‘142
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`Patent at claim 18 (“wherein the peak plasma density of the strongly-ionized plasma
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`9 Mozgrin at 401, right col, ¶2 (“For pre-ionization… the initial plasma density in
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`the 109 – 1011 cm-3 range.”) (Ex. 1003).
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`10 Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-current
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`magnetron discharge (regime 2) in sputtering…plasma density (exceeding 2 x 1013
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`cm-3).”) (Ex. 1003).
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`11 Mozgrin at 409, left col, ¶5 (“The high-current diffuse discharge (regime 3) is
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`useful for producing large-volume uniform dense plasma ni 1.5x1015 cm-3…”)
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`(Ex. 1003).
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`is greater than about 1012 cm˗3”) (Ex. 1001). See also Kortshagen Decl. ¶ 53 (Ex.
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`1002).
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`Finally, Mozgrin generates a strongly-ionized plasma in a chamber. For
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`example, Mozgrin states “[t]he gas from the discharge volume was pumped out;
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`minimal residual gas pressure was about 8 x 10-6 torr.” Mozgrin at 401, left col, ¶ 3
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`(Ex. 1003). That is, Mozgrin pumped the gas out to achieve a desired base pressure
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`within the chamber. See also Mozgrin at Figs. 1 and 6 (Ex. 1003). See also
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`Kortshagen Decl. ¶ 54 (Ex. 1002).
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`b)
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`Limitation (a)
`(1)
`“an ionization source that generates a weakly-
`ionized plasma from a feed gas”
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`The ‘142 Patent uses the terms “weakly-ionized plasma” and “pre-ionized
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`plasma” synonymously. ‘142 Patent at 5:18-19 (“The weakly-ionized plasma is also
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`referred to as a pre-ionized plasma.”) (Ex. 1001). Mozgrin’s power supply (shown
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`in Fig. 2) generates a pre-ionized plasma in Mozgrin’s region 1. Mozgrin at 402,
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`right col, ¶2 (“Figure 3 shows typical voltage and current oscillograms.… Part I in
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`the voltage oscillogram represents the voltage of the stationary discharge (pre-
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`ionization stage).”) (Ex. 1003). See also Kortshagen Decl. ¶ 55 (Ex. 1002).
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`Moreover, the density of Mozgrin’s pre-ionized plasma matches the
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`exemplary density for weakly-ionized plasma given in the ‘142 Patent. ‘142 Patent
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`at claim 17 (“wherein the peak plasma density of the weakly-ionized plasma is less
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`than about 1012 cm˗3”) (emphasis added) (Ex. 1001); Mozgrin at 401, right col, ¶2
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`(“[f]or pre-ionization, we used a stationary magnetron discharge; … provided the
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`initial plasma density in the 109 – 1011 cm˗3 range.”) (Ex. 1003) (emphasis added).
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`See also Kortshagen Decl. ¶ 56 (Ex. 1002).
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`Mozgrin also teaches generating its plasma from feed gasses such as Argon
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`and Nitrogen. Mozgrin at 400, right col, ¶ 3 (“We investigated the discharge
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`regimes in various gas mixtures at 10-3 – 10 torr…”) (emphasis added); 402, ¶
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`spanning left and right cols (“We studied the high-current discharge in wide ranges
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`of discharge current…and operating pressure…using various gases (Ar, N2, SF6,
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`and H2) or their mixtures of various composition…”) (emphasis added) (Ex. 1003).
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`See also Kortshagen Decl. ¶ 57 (Ex. 1002).
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`(2)
`“the weakly-ionized plasma reducing the
`probability of developing an electrical breakdown
`condition in the chamber”
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`Mozgrin states “pre-ionization was not necessary; however, in this case, the
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`probability of discharge transferring to arc mode increased.” Mozgrin at 406, right
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`col, ¶3 (Ex. 1003). Thus, Mozgrin teaches that failing to make the weakly-ionized
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`plasma increases the probability of arcing and that creation of the weakly-ionized
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`plasma (Mozgrin’s region 1) reduces “the probability of developing an electrical
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`breakdown condition in the chamber.” Kortshagen Decl. ¶ 58 (Ex. 1002).
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`(a) The Patent Owner mischaracterized Mozgrin
`during prosecution of the related U.S. Pat. No.
`7,147,759
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`The ‘142 Patent (Ex. 1001) and the ’759 Patent (Ex. 1010) name the same
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`inventor and are owned by a common assignee. Both patents are asserted in related
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`litigation. During prosecution of the ‘759 Patent, the Patent Owner argued that
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`Mozgrin does not teach “without forming an arc.” See 05/02/06 Resp. of ‘759
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`Patent file history at 2, 5, 7 and 13-16 (Ex. 1011). However, the Patent Owner was
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`wrong. Kortshagen Decl. ¶ 59 (Ex. 1002). Mozgrin does teach “without forming an
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`arc” as required by the ‘759 patent as well as “reducing the probability of developing
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`an electrical breakdown condition” as required by the ‘142 patent. Id. (Ex. 1002).
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`As shown in Mozgrin’s Fig. 7, if voltage is steadily applied, and current is
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`allowed to grow, the plasma will eventually transition to the arc discharge region
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`(Mozgrin’s region 4). However, if the current is limited, the plasma will remain in
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`the arc-free regions 2 (sputtering) or 3 (etching). Id. at ¶ 60 (Ex. 1002).
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`Mozgrin is an academic paper and it explores all regions, including the arc
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`discharge region, so as to fully characterize the plasma. Id. at ¶ 61 (Ex. 1002). But
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`Mozgrin’s discussion of arcing does not mean that arcing is inevitable. Id. (Ex.
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`1002). Rather, Mozgrin’s explanation of the conditions under which arcing
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`occurs provides a recipe for avoiding arcs. Id. (Ex. 1002). Mozgrin explicitly notes
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`that arcs can be avoided. See Mozgrin at 400, left col, ¶ 3 (“Some experiments on
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`U.S. PATENT 6,853,142
`Petition for Inter Partes Review
`magnetron systems of various geometry showed that discharge regimes which do
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`not transit to arcs can be obtained even at high currents.”) (emphasis added) (Ex.
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`1003). See also Kortshagen Decl. ¶ 61 (Ex. 1002).
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`One of ordinary skill would understand that the arc discharge region should
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`be avoided during plasma generation that is used for applications such as sputtering
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`or etching. Id. at ¶ 62 (Ex. 1002). For example, Plasma Etching: An Introduction,
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`by Manos and Flamm (“Manos”), a well-known textbook on plasma processing,
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`which was published in 1989, over a decade before the ‘142 Patent was filed, states
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`that “arcs…are a problem…” Manos at 231 (emphasis added) (Ex. 1006).
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`One of ordinary skill would further understand that Mozgrin’s arc region can
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`be avoided, such as by generating a weakly-ionized plasma as explained above.