EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`
`References cited herein:
` U.S. Pat. No. 6,853,142 (“’142 Patent”)
`
` U.S. Pat. No. 6,413,382 (“Wang”)
`
` U.S. Pat. No. 6,190,512 (“Lantsman”)
`
`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`[1pre.] An apparatus for
`generating a strongly-ionized
`plasma in a chamber, the
`apparatus comprising:
`
`[1a.] an ionization source that
`generates a weakly-ionized
`plasma from a feed gas, the
`weakly-ionized plasma
`reducing the probability of
`developing an electrical
`breakdown condition in the
`chamber;
`
`Wang in view of Lantsman
`
`The combination of Wang and Lantsman discloses an
`apparatus for generating a strongly-ionized plasma in a
`chamber.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB, more preferably at least
`100 times, and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of
`1kW will typically be sufficient to support a plasma with the
`torpedo magnetron and a 200 mm wafer although with little
`if any actual sputter deposition.”)
`
`Wang at 7:31-39 (“In one mode of operating the reactor,
`during the background period, little or no target sputtering is
`expected. The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP
`magnetron can maintain a plasma at lower power and lower
`pressure than can a larger stationary magnetron. However, it
`is possible to combine highly ionized sputtering during the
`pulses with significant neutral sputtering during the
`background period.”)
`
`Wang at 7:28-30 (“ the application of the high peak power PP
`instead quickly causes the already existing plasma to spread
`and increases the density of the plasma”)
`
`The combination of Wang and Lantsman discloses an
`ionization source that generates a weakly-ionized plasma
`from a feed gas, the weakly-ionized plasma reducing the
`probability of developing an electrical breakdown condition
`in the chamber.
`
`Wang at Fig. 7
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32….”)
`
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`Page 1 of 14
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`[1b.] a power supply that
`supplies power to the weakly-
`ionized plasma though an
`electrical pulse applied across
`the weakly-ionized plasma, the
`electrical pulse having a
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is
`supplied to the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is chosen
`to exceed the minimum power necessary to support a
`plasma... [T]he application of the high peak power PP
`quickly causes the already existing plasma to spread and
`increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB … and most preferably
`1000 times to achieve the greatest effect of the invention. A
`background power PB of 1 kW [causes] little if any actual
`sputter deposition.”
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region 42 of
`a high-density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, which may dislodge large particles from
`the target or chamber… The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been
`ignited at the beginning of sputtering prior to the illustrated
`waveform, no more plasma ignition occurs.”).
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to
`the target 14 … and supplies an essentially constant negative
`voltage to the target 14 corresponding to the background
`power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW will
`typically be sufficient to support a plasma…”)
`The combination of Wang and Lantsman discloses a power
`supply that supplies power to the weakly-ionized plasma
`though an electrical pulse applied across the weakly-ionized
`plasma, the electrical pulse having a magnitude and a rise-
`time that is sufficient to increase the density of the weakly-
`
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`

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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`magnitude and a rise-time that
`is sufficient to increase the
`density of the weakly-ionized
`plasma to generate a strongly-
`ionized plasma; and
`
`[1c.] a gas line that supplies
`feed gas to the strongly-
`ionized plasma, the feed gas
`diffusing the strongly-ionized
`plasma, thereby allowing
`additional power from the
`pulsed power supply to be
`absorbed by the strongly-
`ionized plasma.
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`ionized plasma to generate a strongly-ionized plasma.
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces
`a train of negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at
`least 10 times the background power level PB, … most
`preferably 1000 times to achieve the greatest effects of the
`invention. A background power PB of 1 kW will typically be
`sufficient…”)
`
`Wang at 7:28-30 (“… the application of the high peak power
`PP instead quickly causes the already existing plasma to
`spread and increases the density of the plasma.”).
`
`Wang at 7:36-39 (“However, it is possible to combine highly
`ionized sputtering during the pulses with significant neutral
`sputtering during the background period.”)
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the
`design of the pulsed DC power supply 80, and significant
`rise times and fall times are expected.”)
`
`See evidence cited in limitation [1pre] of claim 1.
`
`The combination of Wang and Lantsman discloses a gas line
`that supplies feed gas to the strongly-ionized plasma, the
`feed gas diffusing the strongly-ionized plasma, thereby
`allowing additional power from the pulsed power supply to
`be absorbed by the strongly-ionized plasma.
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32 through a mass flow controller
`34 to a region in back of the grounded shield 24.”)
`
`Wang at 4:8-10 (“The gas flows into the processing region
`22 through a gap formed between the pedestal 18, the
`grounded shield 24, and a clamp ring or plasma focus ring 36
`surrounding the periphery of the wafer 20.”)
`
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`3. The apparatus of claim 1
`wherein the gas line supplies
`additional feed gas that
`exchanges the weakly-ionized
`plasma while applying the
`electrical pulse across.
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`Wang at 4:51-55 (“A computerized controller 58 controls the
`… mass flow controller 34, as illustrated….”)
`
`Lantsman at 2:48-51 (“This secondary power supply ‘pre-
`ignites’ the plasma so that when the primary power supply is
`applied, the system smoothly transitions to final plasma
`development and deposition.”)
`
`One of ordinary skill would have been motivated to combine
`Wang and Lantsman. Lantsman is directed to sputtering
`using a plasma. So is Wang. See Wang at Title (“Pulsed
`sputtering with a small rotating magnetron”); 3:20-21 (“[A]
`high plasma density is achieved adjacent to the magnetron
`during the pulse.”). Also, Lantsman uses two power
`supplies, one for pre-ionization and one for deposition. So
`does Wang. See Wang at Fig. 7 [showing pulsed supply 80
`and constant supply 100]
`
`Lantsman generates a plasma without arcing. So does Wang.
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, …. The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Summarizing, Wang and Lantsman relate to the same
`application. Further, one of ordinary skill would have been
`motivated to use Lantsman’s continuous gas flow in Wang
`so as to maintain a desired pressure in the chamber. Also,
`use of Lantsman’s continuous gas flow in Wang would have
`worked well with Wang’s mass flow controller 34 and would
`have been a combination of old elements in which each
`element behaved as expected. Finally, such a continuous
`flow of gas in Wang would diffuse the strongly-ionized
`plasma and allow additional power to be absorbed by the
`plasma as required by claim 1.
`
`The combination of Wang and Lantsman discloses the gas
`line supplies additional feed gas that exchanges the weakly-
`ionized plasma while applying the electrical pulse across.
`
`See evidence cited in claim 1
`
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`4. The apparatus of claim 1
`wherein the power supply
`generates a constant power.
`
`5. The apparatus of claim 1
`wherein the power supply
`generates a constant voltage.
`
`6. The apparatus of claim 1
`wherein the ionization source
`is chosen from the group
`comprising an electrode
`coupled to a DC power supply,
`an electrode coupled to an AC
`power supply, a UV source, an
`X-ray source, an electron beam
`source, an ion beam source, an
`inductively coupled plasma
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`
`
`The combination of Wang and Lantsman discloses the power
`supply generates a constant power.
`
`See evidence cited in claim 1
`
`‘142 Patent at Fig. 4
`
`Wang at Figs. 1, 6 and 7
`
`Lantsman at 1:22-24 (“A typical DC power supply 10
`includes a relatively sophisticated control system, designed
`to permit operation in constant power, constant voltage, or
`constant current modes.”)
`
`The combination of Wang and Lantsman discloses the power
`supply generates a constant voltage.
`
`See evidence cited in claim 1
`
`Wang at 7:61-62 (“pulsed DC power supply 80 produces a
`train of negative voltage pulses.”)
`
`One of ordinary skill would have understood that Wang’s
`voltage would be constant for at least a portion of the
`duration of the pulse τw so as to produce pulse PP of constant
`power.
`
`Lantsman at 1:22-24 (“A typical DC power supply 10
`includes a relatively sophisticated control system, designed
`to permit operation in constant power, constant voltage, or
`constant current modes.”)
`
`The combination of Wang and Lantsman discloses the
`ionization source is chosen from the group comprising an
`electrode coupled to a DC power supply, an electrode
`coupled to an AC power supply, a UV source, an X-ray
`source, an electron beam source, an ion beam source, an
`inductively coupled plasma source, a capacitively coupled
`plasma source, and a microwave plasma source.
`
`See evidence cited in claim 1
`
`Wang at 7:58 (“… DC power supply 100 is connected to the
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`source, a capacitively coupled
`plasma source, and a
`microwave plasma source.
`
`7. The apparatus of claim 1
`further comprising a magnet
`that is positioned to generate a
`magnetic field proximate to the
`weakly-ionized plasma, the
`magnetic field trapping
`electrons in the weakly-ionized
`plasma.
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`target 14.”)
`
`Wang at Figs. 1 and 7
`
`The combination of Wang and Lantsman discloses a magnet
`that is positioned to generate a magnetic field proximate to
`the weakly-ionized plasma, the magnetic field trapping
`electrons in the weakly-ionized plasma.
`
`See evidence cited in claim 1
`
`‘142 Patent at 1:41-43 [in the Background of the Invention]
`(“Magnetron sputtering systems use magnetic fields that are
`shaped to trap and concentrate secondary electrons….”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus
`creating a region 42 of a high-density plasma (HDP)….”)
`
`Wang at Fig. 1
`
`9. The apparatus of claim 7
`wherein the magnet is
`movable.
`
`The combination of Wang and Lantsman discloses the
`magnet is movable.
`
`See evidence cited in claim 7
`
`[10pre.] A method for
`generating a strongly-ionized
`plasma in a chamber, the
`method comprising:
`
`[10a.] ionizing a feed gas to
`form a weakly-ionized plasma
`that reduces the probability of
`developing an electrical
`breakdown condition in the
`chamber;
`
`Wang at 4:23-24 (“A small rotatable magnetron 40 is
`disposed in the back of the target 14”) (emphasis added)
`
`The combination of Wang and Lantsman discloses a method
`for generating a strongly-ionized plasma in a chamber.
`
`See evidence cited in claim 1 preamble.
`
`The combination of Wang and Lantsman discloses ionizing a
`feed gas to form a weakly-ionized plasma that reduces the
`probability of developing an electrical breakdown condition
`in the chamber.
`
`See evidence cited limitation [1a] in claim 1.
`
`[10b.] supplying power to the
`weakly-ionized plasma by
`applying an electrical pulse
`across the weakly-ionized
`
`The combination of Wang and Lantsman discloses supplying
`power to the weakly-ionized plasma by applying an
`electrical pulse across the weakly-ionized plasma, the
`electrical pulse having a magnitude and a rise-time that is
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`

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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`plasma, the electrical pulse
`having a magnitude and a rise-
`time that is sufficient to
`increase the density of the
`weakly-ionized plasma to
`generate a strongly-ionized
`plasma; and
`
`[10c.] diffusing the strongly-
`ionized plasma with additional
`feed gas thereby allowing the
`strongly-ionized plasma to
`absorb additional energy from
`the power supply.
`
`12. The method of claim 10
`further comprising exchanging
`the weakly-ionized plasma
`with additional feed gas.
`
`14. The method of claim 10
`further comprising selecting at
`least one of a pulse amplitude
`and a pulse width of the
`electrical pulse in order to
`increase an ionization rate of
`the strongly-ionized plasma.
`
`15. The method of claim 10
`further comprising selecting at
`least one of a pulse amplitude
`and a pulse width of the
`electrical pulse in order to
`cause the strongly-ionized
`plasma to be substantially
`uniform.
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`sufficient to increase the density of the weakly-ionized
`plasma to generate a strongly-ionized plasma.
`
`See evidence cited in limitation [1b] in claim 1.
`
`The combination of Wang and Lantsman discloses diffusing
`the strongly-ionized plasma with additional feed gas thereby
`allowing the strongly-ionized plasma to absorb additional
`energy from the power supply.
`
`See evidence cited in limitation [1c] in claim 1.
`
`The combination of Wang and Lantsman discloses
`
`See evidence cited in claim 10
`
`
`The combination of Wang and Lantsman discloses selecting
`at least one of a pulse amplitude and a pulse width of the
`electrical pulse in order to increase an ionization rate of the
`strongly-ionized plasma.
`
`See evidence cited in claim 10
`
`Wang at 7:28-30 (“… the application of the high peak power
`PP instead quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at Fig. 6
`
`The combination of Wang and Lantsman discloses selecting
`at least one of a pulse amplitude and a pulse width of the
`electrical pulse in order to cause the strongly-ionized plasma
`to be substantially uniform.
`
`See evidence cited in claim 10
`
`Wang at Figs. 6, 7
`
`Wang at 5:23-26 (“The illustrated pulse form is idealized.
`Its exact shape depends on the design of the pulsed DC
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`19. The method of claim 10
`wherein the ionizing the feed
`gas comprises exposing the
`feed gas to one of a static
`electric field, an pulsed electric
`field, UV radiation, X-ray
`radiation, electron beam
`radiation, and an ion beam.
`
`20. The method of claim 10
`further comprising generating
`a magnetic field proximate to
`the weakly-ionized plasma, the
`magnetic field trapping
`electrons in the weakly-ionized
`plasma.
`
`[40pre.] An apparatus for
`generating a strongly-ionized
`plasma in a chamber, the
`apparatus comprising:
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`power supply 80, and significant rise times and fall times are
`expected.”)
`
`Wang at 4:49-51 (“The rotation scans the HDP region 42
`about the face of the target 14 to more evenly erode the
`target 14 and to produce a more uniform sputter coating on
`the wafer 20.”)
`
`The combination of Wang and Lantsman discloses the
`ionizing the feed gas comprises exposing the feed gas to one
`of a static electric field, an pulsed electric field, UV
`radiation, X-ray radiation, electron beam radiation, and an
`ion beam.
`
`See evidence cited in claim 10
`
`Wang at Fig. 7
`
`Wang at 7:61-63 (“The pulsed DC power supply 80 produces
`a train of negative voltage pulses….”)
`
`The combination of Wang and Lantsman discloses
`generating a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field trapping electrons in the weakly-
`ionized plasma.
`
`See evidence cited in claim 10
`
`See evidence cited in claim 7
`
`The combination of Wang and Lantsman discloses an
`apparatus for generating a strongly-ionized plasma in a
`chamber.
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB, more preferably at least
`100 times, and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of
`1kW will typically be sufficient to support a plasma with the
`torpedo magnetron and a 200 mm wafer although with little
`if any actual sputter deposition.”)
`
`Wang at 7:31-39 (“In one mode of operating the reactor,
`during the background period, little or no target sputtering is
`
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`

`
`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`[40a.] means for ionizing a
`feed gas to form a weakly-
`ionized plasma that reduces the
`probability of developing an
`electrical breakdown condition
`in the chamber;
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`expected. The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP
`magnetron can maintain a plasma at lower power and lower
`pressure than can a larger stationary magnetron. However, it
`is possible to combine highly ionized sputtering during the
`pulses with significant neutral sputtering during the
`background period.”)
`
`Wang at 7:28-30 (“ the application of the high peak power PP
`instead quickly causes the already existing plasma to spread
`and increases the density of the plasma”)
`
`The combination of Wang and Lantsman discloses means for
`ionizing a feed gas to form a weakly-ionized plasma that
`reduces the probability of developing an electrical
`breakdown condition in the chamber.
`
`Claimed function
`
`Claim 40 recites “means for ionizing a feed gas to form a
`weakly-ionized plasma that reduces the probability of
`developing an electrical breakdown condition in the
`chamber.”
`
`The combination of Wang and Lantsman teach the function
`corresponding to the “means for ionizing…” limitation.
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32….”)
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is
`supplied to the processing space 22….”)
`
`Wang at 7:17-31 (“The background power level PB is chosen
`to exceed the minimum power necessary to support a
`plasma... [T]he application of the high peak power PP
`quickly causes the already existing plasma to spread and
`increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least
`10 times the background power PB … and most preferably
`1000 times to achieve the greatest effect of the invention. A
`background power PB of 1 kW [causes] little if any actual
`sputter deposition.”
`
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`

`
`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`
`Wang at 4:23-31 (Ex. 1005) (“…thus creating a region 42 of
`a high-density plasma (HDP)…”)
`
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, which may dislodge large particles from
`the target or chamber… The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Wang at 7:25-28 (“As a result, once the plasma has been
`ignited at the beginning of sputtering prior to the illustrated
`waveform, no more plasma ignition occurs.”).
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the means for ionizing:
`
`a power supply, generating the voltage, current and power
`values shown in Fig. 4 (e.g., between t1 – t2 and t6 – t7),
`electrically coupled to cathode (e.g., 204), anode (e.g., 216)
`and/or an electrode (e.g., 452, 452’), wherein the cathode,
`anode and/or electrode are arranged relative to a sputtering
`target as shown in Figs. 2A-2D and 6A-6D, and as described
`in the text of the ‘142 Patent at 5:5-36, 16:24-40, 17:40-
`18:12, 18:13-34, and 18:35-46
`
`The combination of Wang and Lantsman discloses the
`structure corresponding to the “means for ionizing…”
`limitation. For example:
`
`Wang at Fig. 7
`
`Wang at 7:58-61 (“… DC power supply 100 is connected to
`the target 14 … and supplies an essentially constant negative
`voltage to the target 14 corresponding to the background
`power PB.”)
`
`Wang at 7:22-23 (“A background power PB of 1 kW will
`typically be sufficient to support a plasma…”)
`
`Any difference between Wang’s and the ‘142 Patent’s
`
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`

`
`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`[40b.] means for supplying
`power to the weakly-ionized
`plasma by applying an
`electrical pulse across the
`weakly-ionized plasma, the
`electrical pulse having a
`magnitude and a rise-time that
`is sufficient to increase the
`density of the weakly-ionized
`plasma to generate a strongly-
`ionized plasma; and
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`mechanical arrangement of the anode and cathode is nothing
`more than the mechanical rearrangement of well-known
`components. Rearranging Wang’s components to match that
`of the ‘142 Patent would be obvious to one of ordinary skill.
`
`The combination of Wang and Lantsman discloses means for
`supplying power to the weakly-ionized plasma by applying
`an electrical pulse across the weakly-ionized plasma, the
`electrical pulse having a magnitude and a rise-time that is
`sufficient to increase the density of the weakly-ionized
`plasma to generate a strongly-ionized plasma.
`
`Claimed function
`
`Claim 40 recites “means for supplying power to the weakly-
`ionized plasma by applying an electrical pulse across the
`weakly-ionized plasma, the electrical pulse having a
`magnitude and a rise-time that is sufficient to increase the
`density of the weakly-ionized plasma to generate a strongly-
`ionized plasma.”
`
`The combination of Wang and Lantsman teach the function
`corresponding to the “means for supplying power…”
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces
`a train of negative voltage pulses.”)
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at
`least 10 times the background power level PB, … most
`preferably 1000 times to achieve the greatest effects of the
`invention. A background power PB of 1 kW will typically be
`sufficient…”)
`
`Wang at 7:36-39 (“However, it is possible to combine highly
`ionized sputtering during the pulses with significant neutral
`sputtering during the background period.”)
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the
`design of the pulsed DC power supply 80, and significant
`rise times and fall times are expected.”)
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`[40c.] means for diffusing the
`strongly-ionized plasma with
`additional feed gas to allow
`additional power to be
`absorbed by the strongly-
`ionized plasma.
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`See evidence cited in limitation [40pre] of claim 40.
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the “means for supplying power…”:
`
`pulsed power supply (e.g., 202), generating the voltage,
`current and power values shown in Fig. 4 (e.g., between t2 –
`t4), electrically coupled to a cathode (e.g., 204) and anode
`(e.g., 216), wherein the cathode and anode are arranged
`relative to a sputtering target as shown in Figs. 2A-2D and
`6A-6D, and as described in the text of the ‘142 Patent at
`6:57-7:31, 8:16-25, 12:1-16, 13:25-55, 13:63-14:5, 17:12-33,
`19:3-14, and 19:22-32
`
`The combination of Wang and Lantsman teach the structure
`corresponding to the “means for supplying power…”
`limitation. For example:
`
`Wang at Fig. 7
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces
`a train of negative voltage pulses.”)
`
`Any difference between Wang’s and the ‘142 Patent’s
`mechanical arrangement of the anode and cathode is nothing
`more than the mechanical rearrangement of well-known
`components. Rearranging Wang’s components to match that
`of the ‘142 Patent would be obvious to one of ordinary skill.
`
`The combination of Wang and Lantsman discloses means for
`diffusing the strongly-ionized plasma with additional feed
`gas to allow additional power to be absorbed by the strongly-
`ionized plasma.
`
`Claimed function
`
`Claim 40 recites “means for diffusing the strongly-ionized
`plasma with additional feed gas to allow additional power to
`be absorbed by the strongly-ionized plasma.”
`
`The combination of Wang and Lantsman teach the function
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`corresponding to “means for diffusing…”
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is
`supplied from a gas source 32 through a mass flow controller
`34 to a region in back of the grounded shield 24.”)
`
`Wang at 4:8-10 (“The gas flows into the processing region
`22 through a gap formed between the pedestal 18, the
`grounded shield 24, and a clamp ring or plasma focus ring 36
`surrounding the periphery of the wafer 20.”)
`
`Wang at 4:51-55 (“A computerized controller 58 controls the
`… mass flow controller 34, as illustrated….”)
`
`Lantsman at 2:48-51 (“This secondary power supply ‘pre-
`ignites’ the plasma so that when the primary power supply is
`applied, the system smoothly transitions to final plasma
`development and deposition.”)
`
`One of ordinary skill would have been motivated to combine
`Wang and Lantsman. Lantsman is directed to sputtering
`using a plasma. So is Wang. See Wang at Title (“Pulsed
`sputtering with a small rotating magnetron”); 3:20-21 (“[A]
`high plasma density is achieved adjacent to the magnetron
`during the pulse.”). Also, Lantsman uses two power
`supplies, one for pre-ionization and one for deposition. So
`does Wang. See Wang at Fig. 7 [showing pulsed supply 80
`and constant supply 100]
`
`Lantsman generates a plasma without arcing. So does Wang.
`Wang at 7:3-49 (“Plasma ignition, particularly in plasma
`sputter reactors, has a tendency to generate particles during
`the initial arcing, …. The initial plasma ignition needs be
`performed only once and at much lower power levels so that
`particulates produced by arcing are much reduced.”)
`
`Summarizing, Wang and Lantsman relate to the same
`application. Further, one of ordinary skill would have been
`motivated to use Lantsman’s continuous gas flow in Wang
`so as to maintain a desired pressure in the chamber. Also,
`use of Lantsman’s continuous gas flow in Wang would have
`worked well with Wang’s mass flow controller 34 and would
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`
`
`‘142 Claims 1, 3-7, 9, 10, 12,
`14, 15, 19, 20, 40, and 42
`
`42. The apparatus of claim 1
`wherein the power supply
`comprises the ionization
`source.
`
`
`
`EXHIBIT D.07
`U.S. Patent No. 6,853,142
`
`Wang in view of Lantsman
`
`have been a combination of old elements in which each
`element behaved as expected. Finally, such a continuous
`flow of gas in Wang would diffuse the strongly-ionized
`plasma and allow additional power to be absorbed by the
`plasma as required by claim 40.
`
`Corresponding structure
`
`The ‘142 Patent discloses the following structure that
`corresponds to the “means for diffusing…” limitation:
`
`feed gas lines 224 as shown in Figs. 2A-2D and 6A-D and as
`described in the text of the ‘142 Patent at 4:48-5:4
`
`The combination of Mozgrin and Lantsman teach the
`structure corresponding to the “means for diffusing…”
`limitation. For example:
`
`Wang at Fig. 1 [showing gas flow controller 34 and gas line]
`
`The combination of Wang and Lantsman discloses the power
`supply comprises the ionization source.
`
`See evidence cited in claim 1
`
`Wang at Fig. 7
`
`Wang at 7:57-63 (“A variable DC power supply 100 is
`connected to the target 14 … and supplies an essentially
`constant negative voltage to the target 14 corresponding to
`the background power PB. The pulsed DC power supply 80
`produces a train of negative voltage pulses….”)
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